CN101902038A - Electrostatic protection device, electrostatic protection system and visual inspection test method - Google Patents
Electrostatic protection device, electrostatic protection system and visual inspection test method Download PDFInfo
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- CN101902038A CN101902038A CN2009100522119A CN200910052211A CN101902038A CN 101902038 A CN101902038 A CN 101902038A CN 2009100522119 A CN2009100522119 A CN 2009100522119A CN 200910052211 A CN200910052211 A CN 200910052211A CN 101902038 A CN101902038 A CN 101902038A
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- 238000011179 visual inspection Methods 0.000 title claims abstract description 31
- 238000010998 test method Methods 0.000 title 1
- 230000005669 field effect Effects 0.000 claims abstract description 168
- 238000012360 testing method Methods 0.000 claims abstract description 71
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 8
- 238000005421 electrostatic potential Methods 0.000 description 5
- 238000012795 verification Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 238000012800 visualization Methods 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000009993 protective function Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
An electrostatic protection device, an electrostatic protection system using the electrostatic protection device and a visual inspection testing method using the electrostatic protection system are provided, wherein the electrostatic protection device comprises: the grid electrode of the first field effect transistor is connected with the drain electrode thereof and the source electrode of the second field effect transistor and is used as the input end of the electrostatic protection device; and the grid electrode of the second field effect transistor is connected with the drain electrode thereof and the source electrode of the first field effect transistor and is used as the output end of the electrostatic protection device. The invention combines the electrostatic protection with the visual inspection test, not only can effectively implement the electrostatic protection, but also can implement the visual inspection test by controlling the voltage on the electrostatic protection device to switch on and off, thereby reducing the process complexity.
Description
Technical field
The present invention relates to the electrostatic protection system and the visual inspection testing method of electrostatic protection device, application electrostatic protection device.
Background technology
In the procedure for producing of display panels, because some external factor, for example continuous process operations and carrying or environmental change etc., the accumulation that can in panel, produce electrostatic charge usually.Because glass itself is megohmite insulant, unless therefore suitable discharge channel is arranged, electrostatic charge can rest on substrate surface always.When static charge accumulation after some, will produce discharge (ESD, ElectrostaticDischarge).Time when static discharge takes place is very short, and a large amount of electric charges shifts in a short period of time and will produce high electric current, thereby will cause circuit or substrate itself on thin film field-effect pipe (TFT) substrate to be destroyed.For fear of the static discharge phenomenon occurring, usually by the electrostatic protection device discharge electrostatic charges being set, the protection display panels.
With reference to figure 1, in illustrated short circuit protection system, lead 02 is used for each pixel cell in the viewing area 10 is connected with the integrated circuit (IC) chip that is used to control demonstration and to described each pixel cell transmission signals; Wherein, described signal can be the line scan signals of parity rows, also can be single-row red (R)/green (G)/data-signal of blue (B) three primary colors pixel or its are arranged side by side.Short-circuited conducting sleeve 15 is the becket of 10 peripheries, viewing area, when each bar lead 02 passes short-circuited conducting sleeve 15, links to each other with short-circuited conducting sleeve 15 by electrostatic protection device 06 respectively, makes to have equal electromotive force between each lead 02.On the other hand, electrostatic protection device 06 also is set between test bus 03 and the public electrode 12, to avoid build up of electrostatic charge on the display casing.
In addition, in the procedure for producing of display panels, another important detection link is a visual inspection, this detection ring is saved Yu Zaiyi and is not added as yet under the situation of integrated circuit (IC) chip injecting liquid crystal molecule between substrate, and whether good whether detect all pixel cells and line related can operate as normal.Specifically, in visual inspection, the lead of earlier each pixel cell being drawn is connected to bus, applies voltage then, whether lights and then judge the ability to work of each pixel cell and line thereof by detecting each pixel cell.In addition, after detection finishes, need blow step by laser the line in the wiring region is blown, make each pixel cell separate, to avoid the phase mutual interference.
With reference to figure 2, lead 02 is connected with test bus 03 by pin 01.In the visual inspection test process, the lead 02 that extends out is coupled together with test bus 03 by rule wiring zone 04, and test bus 03 is connected with test board 05.By applying test voltage to test board 05, whether all horizontal scanning lines and column signal line can operate as normal in the check viewing area.After the visual inspection test is finished, by laser the lead 02 in the rule wiring zone 04 is blown, make each pixel cell independently of one another, no longer interconnected by lead 02.
Can find that thus in prior liquid crystal display, on the one hand, the ESD module 06 that is used for electrostatic protection extensively is present between viewing area and the display casing, puts in length and breadth, area occupied is more, and it is wide to have wasted screen, and has reduced the production integrated level; On the other hand, interconnected after earlier lead being extended in the visual inspection process, and after test, adopt laser to blow step with interconnected lead disconnection, and increased process complexity, cause productive rate to descend.
Summary of the invention
The problem that the present invention solves provides a kind of electrostatic protection device, except electrostatic protection is provided, also can provide the connected sum in the visual inspection to block.
For addressing the above problem, the invention provides a kind of electrostatic protection device, comprise: first field effect transistor and second field effect transistor, the grid of described first field effect transistor is connected with the source electrode of its drain electrode and described second field effect transistor, as the input of described electrostatic protection device; The grid of described second field effect transistor is connected with the source electrode of its drain electrode and described first field effect transistor, as the output of described electrostatic protection device.
Optionally, described first field effect transistor has identical cut-in voltage with described second field effect transistor.
Optionally, described first field effect transistor has identical semiconductor parameter with described second field effect transistor.
Optionally, described cut-in voltage is more than or equal to the threshold voltage of described field effect transistor.
Optionally, described cut-in voltage equals the threshold voltage of described field effect transistor.
Optionally, described threshold voltage is arbitrary magnitude of voltage among the 10V to 30V.
Optionally, described threshold voltage is 15V.
Optionally, the breadth length ratio of described first field effect transistor or described second field effect transistor is 18: 6 to 6: 6.
Optionally, the breadth length ratio of described first field effect transistor or described second field effect transistor is 16: 6.
The present invention also provides a kind of electrostatic protection device, comprise that a plurality of field effect transistor that are connected in series are right, wherein, the right input of first field effect transistor is as the input of described electrostatic protection device, the output that the right input of each field effect transistor and its previous field effect transistor are right is connected, and a field effect transistor right output in end is as the output of described electrostatic protection device; Each field effect transistor is to comprising first field effect transistor and second field effect transistor, the grid of described first field effect transistor is connected with the source electrode of its drain electrode and described second field effect transistor, as the right input of described field effect transistor, the grid of described second field effect transistor is connected with the source electrode of its drain electrode and described first field effect transistor, as the right output of described field effect transistor.
Optionally, described first field effect transistor has identical cut-in voltage with described second field effect transistor.
Optionally, described first field effect transistor has identical semiconductor parameter with described second field effect transistor.
Optionally, described cut-in voltage is more than or equal to the threshold voltage of described field effect transistor.
Optionally, described cut-in voltage equals the threshold voltage of described field effect transistor.
Optionally, described threshold voltage is arbitrary magnitude of voltage among the 10V to 30V.
Optionally, described threshold voltage is 15V.
Optionally, the breadth length ratio of described first field effect transistor or described second field effect transistor is 18: 6 to 6: 6.
Optionally, the breadth length ratio of described first field effect transistor or described second field effect transistor is 16: 6.
The present invention also provides a kind of display unit electrostatic protection system, comprising: lead, test bus, electrostatic protection device, wherein, described lead connect be used to show each pixel cell and described test bus; One end of described electrostatic protection device is connected with described lead; the other end connects described test bus, plays electrostatic protective function, and by applying suitable voltage to described electrostatic protection device; it is opened or closure, realize disconnection or connection between each lead.
The present invention also provides a kind of visual inspection test of using above-mentioned electrostatic protection system, comprising: apply first test voltage, described electrostatic protection device is opened, thereby each lead is interconnected by described electrostatic protection device; By each lead of interconnection, each pixel cell in the described display unit is carried out the visual inspection test.
Optionally, described first test voltage is greater than the cut-in voltage of described electrostatic protection device.
Optionally, the difference of described first test voltage and described electrostatic protection device cut-in voltage equates with the normal working voltage of described display unit.
Compared with prior art, electrostatic protection device provided by the invention not only can carry out effective electrostatic protection, also can be by the voltage of control on the described electrostatic protection device, and realize its conducting and block.
On the other hand, the present invention is applied to the visual inspection test with described electrostatic protection device, and the laser that has reduced in the conventional visualization check blows processing step, has reduced the complexity of technology.
Description of drawings
Fig. 1 is the structural representation of electrostatic protection system in the prior art display unit;
Fig. 2 is the structural representation of visual inspection test in the prior art display unit;
Fig. 3 is the structural representation of electrostatic protection device execution mode of the present invention;
Fig. 4 is a field effect transistor source-drain electrode electric current I
DsLogarithm and gate-source voltage V
GsConcern schematic diagram;
Fig. 5 is the structural representation of the another kind of execution mode of electrostatic protection device of the present invention;
Fig. 6 is the structural representation of electrostatic protection system execution mode of the present invention;
Fig. 7 is the schematic flow sheet that the present invention uses the visual inspection testing method execution mode of described electrostatic protection system;
Fig. 8 is the structural representation of the applied electrostatic protection system of visual inspection testing method embodiment of the present invention.
Embodiment
Embodiment of the present invention provides a kind of electrostatic protection device; electrostatic protection is combined with the visual inspection test; not only can carry out electrostatic protection effectively; thereby also can make its conducting and block the test of enforcement visual inspection by the voltage of controlling on the described electrostatic protection device, the laser that has reduced in the conventional visualization check blows processing step.In addition, embodiment of the present invention also provides a kind of display unit electrostatic protection system of using described electrostatic protection device, has realized the fail safe short circuit of each parts, and it is wide to have shortened the screen of described display unit.
With reference to figure 3, embodiment of the present invention provides a kind of electrostatic protection device, at least comprise: first field effect transistor 310 and second field effect transistor 320, wherein, the grid 311 of first field effect transistor 310 is connected with the source electrode 323 of its drain electrode 312 and second field effect transistor 320, as the input of described electrostatic protection device; The grid 321 of second field effect transistor 320 is connected with the source electrode 313 of its drain electrode 322 and first field effect transistor 310, as the output of described electrostatic protection device.
In each field effect transistor of described electrostatic protection device, the electric current I between its source-drain electrode
DsAnd the voltage V between its grid source electrode
GsBetween have certain relation.With first field effect transistor 310 is example, with reference to figure 4, and the electric current I between the source-drain electrode
DsLogarithm and the voltage V between the grid source electrode
GsBetween relation as shown in the figure.As gate source voltage V
GsReach cut-in voltage V
EsdThe time, the raceway groove conducting of first field effect transistor 310, source-drain current I
DsObviously increase i.e. first field effect transistor, 310 conductings.
When electrostatic charge is assembled and described electrostatic protection device is produced higher electrostatic potential, specifically, when electrostatic potential makes the source electrode 313 of the field effect transistor 310 of winning and the voltage between 312 of draining reaches the cut-in voltage V of first field effect transistor 310
EsdThe time, 310 conductings of first field effect transistor, same, at this moment, 320 conductings of second field effect transistor.Therefore, there is current path between the input of described electrostatic protection device and the output.Described electrostatic charge discharges by described current path, and the voltage up to described electrostatic protection device input, output two ends obtains balance.
And do not reach the cut-in voltage V of first field effect transistor 310 when electrostatic potential
EsdThe time, not enough so that first field effect transistor, 310 conductings, therefore, first field effect transistor 310 is in cut-off state, and is same, and second field effect transistor 320 also is in cut-off state.In this case, the input of described electrostatic protection device and the current path between the output end, and promptly are off state between the input of described electrostatic protection device and the output.
First field effect transistor 310 can have identical cut-in voltage V with second field effect transistor 320
Esd, and the cut-in voltage V of described field effect transistor
EsdMore than or equal to its threshold voltage V
ThIn a kind of specific embodiment, can make the described cut-in voltage V of each field effect transistor
EsdBe its threshold voltage V
Th, and by making each field effect transistor have identical threshold voltage V
ThThereby, make the cut-in voltage V of each field effect transistor
EsdIdentical.For example, the threshold voltage of each described field effect transistor can be arranged on a concrete magnitude of voltage in the scope of 10V to 30V.In a kind of specific embodiment, the threshold voltage of described field effect transistor can be set to 15V.In addition, can be by material doped or adopt different process meanses, to the threshold voltage V of described field effect transistor
ThRegulate, thereby regulate its cut-in voltage V
Esd
In a kind of embodiment, first field effect transistor 310 can have identical semiconductor parameter with second field effect transistor 320, as breadth length ratio, doping content etc., at this moment, the threshold voltage V of first field effect transistor 310 and second field effect transistor 320
ThIdentical.Because when the field effect pipe was in linear district and saturation region, its source-drain current Ids was directly proportional with the breadth length ratio of its raceway groove.Therefore, by the breadth length ratio in controlling filed effect pipe trench road, the cut-in voltage V of the described field effect transistor of scalable
EsdFor example, breadth length ratio that can each described field effect transistor is set to a concrete ratio in 18: 6 to 6: 6.In a kind of specific embodiment, breadth length ratio that can each described field effect transistor is set to 16: 6.
In the above-mentioned various execution mode, it is right that first field effect transistor 310 and second field effect transistor 320 have been formed a field effect transistor.In other execution mode of electrostatic protection device of the present invention, can comprise that also a plurality of field effect transistor that are connected in series are right; Wherein, each field effect transistor is to comprising described first field effect transistor and described second field effect transistor, and each field effect transistor centering, described first field effect transistor is connected according to above-mentioned execution mode with described second field effect transistor, the grid that is described first field effect transistor is connected with the source electrode of its drain electrode and described second field effect transistor, as the right input of described field effect transistor, the grid of described second field effect transistor is connected with the source electrode of its drain electrode and described first field effect transistor, as the right output of described field effect transistor.Each field effect transistor between be connected in series; the input of first field effect transistor is as the input of described electrostatic protection device; the output that the right input of each field effect transistor and its previous field effect transistor are right is connected, and a field effect transistor right output in end is as the output of described electrostatic protection device.
In a kind of specific embodiment, with reference to figure 5, described electrostatic protection device comprises that two field effect transistor are right, and wherein, first field effect transistor is to comprising that 420, the second field effect transistor of field effect transistor 410 and field effect transistor are to comprising field effect transistor 430 and field effect transistor 440.The grid 411 of field effect transistor 410 is connected with the source electrode 423 of its drain electrode 412 and field effect transistor 420; The grid 431 of field effect transistor 430 is connected with the source electrode 443 of its drain electrode 432 and field effect transistor 440; The grid 421 of field effect transistor 420 and drain 422, the grid 441 of the source electrode 423 of field effect transistor 410, field effect transistor 440 and drain 442 and the source electrode 433 of field effect transistor 430 be connected.In addition, field effect transistor 410, field effect transistor 420, field effect transistor 430 and field effect transistor 440 have identical cut-in voltage V
Esd
Because described two field effect transistor to being connected in series, therefore have only the electrostatic potential that ought be applied between described electrostatic protection device input and the output to reach described cut-in voltage V
EsdTwice the time; just can make field effect transistor 410, field effect transistor 420, field effect transistor 430 and field effect transistor 440 all be in conducting state; make the current path that has discharge electrostatic charges between the input, output of described electrostatic protection device, play the effect of electrostatic protection.
Similarly, in other execution mode, by adopting more than two field effect transistor to connecting, so that the cut-in voltage of described electrostatic protection device to be provided, even described electrostatic protection device can bear higher electrostatic potential.For example, has identical cut-in voltage V with n
EsdField effect transistor to the series connection, can obtain cut-in voltage is n*V
EsdElectrostatic protection device.
Each execution mode of above-mentioned electrostatic protection device can be applicable to a plurality of positions of electronic device; for example for LCD; described electrostatic protection device can be installed between test bus and the LCD outer housing; the one end is connected with described test bus; the other end connects the shell of described LCD, discharges the electrostatic charge of being gathered.
Embodiment of the present invention also provides a kind of electrostatic protection system of using described electrostatic protection device, and described electrostatic protection system is applied in the display unit, with reference to figure 6, comprises at least: lead 520, test bus 530, electrostatic protection device 550.Wherein, lead 520 connects each pixel cell and the test bus 530 that is used to show; One end of electrostatic protection device 550 is connected with lead 520; the other end connects test bus 530, plays electrostatic protective function, and by applying suitable voltage to electrostatic protection device 550; it is opened or closure, realize disconnection or connection between each lead 520.
In the lump with reference to figure 1, described electrostatic protection system has replaced and has been used to realize a plurality of esd protection circuits that are provided with in length and breadth of being connected between each lead and the short-circuited conducting sleeve around each pixel cell in the prior art, thereby the screen that has dwindled effectively between the framework 510 is wide.
Described electrostatic protection device and described electrostatic protection system can be applicable to the visual inspection test.With reference to figure 7, the display unit that comprises described electrostatic protection system is carried out in the process of visual inspection test, at first, step S1, apply first test voltage, the display unit of described display unit and the electrostatic protection device between the test bus are opened, thereby each lead is interconnected by described electrostatic protection device; Secondly, step S2 by each lead of interconnection, carries out the visual inspection test to each pixel cell in the described display unit.Wherein, described first test voltage is greater than the cut-in voltage of described electrostatic protection device, and the difference of described first test voltage and described electrostatic protection device cut-in voltage is the verification test voltage that carries out the visual inspection test.
In a concrete execution mode, with reference to figure 8, described LCD comprises described electrostatic protection system, and every lead 820 of being drawn by display unit 810 is connected to test bus 840 by electrostatic protection device 830.
When described LCD is carried out visual inspection, on test board 850, apply a test voltage V who is enough to make described electrostatic protection device 830 to be opened
Test, wherein, test voltage V
TestCut-in voltage V greater than described electrostatic protection device 830
EsdAt this moment, all short circuit is together for all leads 820 that are connected with test bus 840 by described electrostatic protection device 830.The difference of described test voltage and described cut-in voltage, i.e. verification test voltage V
Op1=V
Test-V
Esd, be applied on the display unit 810, be used to carry out verification test.
When described LCD normally shows, normal working voltage V
Op2Be applied on the display unit 810, and, make described normal working voltage V by the cut-in voltage of suitable electrostatic protection device 830 is set
Op2Cut-in voltage V much smaller than described electrostatic protection device 830
EsdThat is to say, at this moment, normal working voltage V
Op2Described electrostatic protection device 830 is opened, and the lead 820 that therefore connects each pixel cell can not take place interconnected, and each pixel cell of described LCD is independently of one another and can normally show.In specific embodiment, described verification test voltage V
Op1Can with described normal working voltage V
Op2Equate.
In a specific embodiment, the cut-in voltage V of described electrostatic protection device
EsdBe 30V, the normal working voltage that common IC chip is exported is 15V.When carrying out visual inspection, on test board, apply 45V voltage, making has the verification test voltage of 15V to put on display unit, for detection.And when normal the demonstration, the driving voltage 15V that the IC chip is provided can't make described electrostatic protection device open, and all leads are independently of one another, and the IC chip can carry out driven.
Compared to existing electrostatic protection device, each execution mode of the present invention provides a kind of electrostatic protection device, plays the effect of electrostatic protection effectively with simple structure.And embodiment of the present invention also provides a kind of display unit electrostatic protection system of using described electrostatic protection device, has realized the fail safe short circuit of each parts, and the screen that has shortened described display unit is wide.In addition, described electrostatic protection system is applied to visual inspection test, by controlling the voltage on the described electrostatic protection device, realize its conducting and block, thereby the laser that has reduced in the conventional visualization check blows processing step, has reduced the complexity of technology.
Though the present invention by the preferred embodiment explanation as above, these preferred embodiments are not in order to limit the present invention.Those skilled in the art without departing from the spirit and scope of the present invention, should have the ability various corrections and additional are made in this preferred embodiment, and therefore, protection scope of the present invention is as the criterion with the scope of claims.
Claims (22)
1. an electrostatic protection device is characterized in that, comprising: first field effect transistor and second field effect transistor, and the grid of described first field effect transistor is connected with the source electrode of its drain electrode and described second field effect transistor, as the input of described electrostatic protection device; The grid of described second field effect transistor is connected with the source electrode of its drain electrode and described first field effect transistor, as the output of described electrostatic protection device.
2. electrostatic protection device as claimed in claim 1 is characterized in that, described first field effect transistor has identical cut-in voltage with described second field effect transistor.
3. electrostatic protection device as claimed in claim 2 is characterized in that, described first field effect transistor has identical semiconductor parameter with described second field effect transistor.
4. electrostatic protection device as claimed in claim 2 is characterized in that described cut-in voltage is more than or equal to the threshold voltage of described field effect transistor.
5. electrostatic protection device as claimed in claim 4 is characterized in that described cut-in voltage equals the threshold voltage of described field effect transistor.
6. electrostatic protection device as claimed in claim 5 is characterized in that, described threshold voltage is arbitrary magnitude of voltage among the 10V to 30V.
7. electrostatic protection device as claimed in claim 6 is characterized in that, described threshold voltage is 15V.
8. electrostatic protection device as claimed in claim 1 is characterized in that, the breadth length ratio of described first field effect transistor or described second field effect transistor is 18: 6 to 6: 6.
9. electrostatic protection device as claimed in claim 8 is characterized in that, the breadth length ratio of described first field effect transistor or described second field effect transistor is 16: 6.
10. electrostatic protection device, it is characterized in that, comprise that a plurality of field effect transistor that are connected in series are right, wherein, the right input of first field effect transistor is as the input of described electrostatic protection device, the output that the right input of each field effect transistor and its previous field effect transistor are right is connected, and a field effect transistor right output in end is as the output of described electrostatic protection device; Each field effect transistor is to comprising first field effect transistor and second field effect transistor, the grid of described first field effect transistor is connected with the source electrode of its drain electrode and described second field effect transistor, as the right input of described field effect transistor, the grid of described second field effect transistor is connected with the source electrode of its drain electrode and described first field effect transistor, as the right output of described field effect transistor.
11. electrostatic protection device as claimed in claim 10 is characterized in that, described first field effect transistor has identical cut-in voltage with described second field effect transistor.
12. electrostatic protection device as claimed in claim 11 is characterized in that, described first field effect transistor has identical semiconductor parameter with described second field effect transistor.
13. electrostatic protection device as claimed in claim 11 is characterized in that, described cut-in voltage is more than or equal to the threshold voltage of described field effect transistor.
14. electrostatic protection device as claimed in claim 13 is characterized in that, described cut-in voltage equals the threshold voltage of described field effect transistor.
15. electrostatic protection device as claimed in claim 14 is characterized in that, described threshold voltage is arbitrary magnitude of voltage among the 10V to 30V.
16. electrostatic protection device as claimed in claim 15 is characterized in that, described threshold voltage is 15V.
17. electrostatic protection device as claimed in claim 10 is characterized in that, the breadth length ratio of described first field effect transistor or described second field effect transistor is 18: 6 to 6: 6.
18. electrostatic protection device as claimed in claim 17 is characterized in that, the breadth length ratio of described first field effect transistor or described second field effect transistor is 16: 6.
19. the electrostatic protection system of each described electrostatic protection device in application such as the claim 1 to 18 also comprises: lead, test bus is characterized in that,
Described lead connects each pixel cell and the described test bus that is used to show;
One end of described electrostatic protection device is connected with described lead; the other end connects described test bus; by applying voltage to described electrostatic protection device, control field effect transistor described in the described electrostatic protection device open or closed, connect or disconnect each lead and test bus.
20. an application is characterized in that as the visual inspection testing method of electrostatic protection system as described in the claim 19, may further comprise the steps:
Apply first test voltage, described electrostatic protection device is opened, thereby connect each lead and described test bus by described electrostatic protection device;
Apply test signal to each lead by described test bus, each pixel cell in the described display unit is carried out the visual inspection test.
21. visual inspection test as claimed in claim 20 is characterized in that described first test voltage is greater than the cut-in voltage of described electrostatic protection device.
22. visual inspection test as claimed in claim 20 is characterized in that the difference of described first test voltage and described electrostatic protection device cut-in voltage equates with the normal working voltage of described display unit.
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| CN 200910052211 CN101902038B (en) | 2009-05-25 | 2009-05-25 | Electrostatic protection device, electrostatic protection system and visual inspection test method |
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| CN103278723A (en) * | 2013-03-19 | 2013-09-04 | 深圳市华星光电技术有限公司 | Electrostatic protection chip detecting device and method |
| CN103293795A (en) * | 2012-03-05 | 2013-09-11 | 上海中航光电子有限公司 | Electrostatic protection circuit of liquid crystal display |
| CN104112426A (en) * | 2014-06-30 | 2014-10-22 | 上海天马有机发光显示技术有限公司 | OLED pixel drive circuit, electrostatic discharge protection circuit and detection method |
| CN105404035A (en) * | 2015-12-08 | 2016-03-16 | 昆山龙腾光电有限公司 | Liquid crystal display panel |
| WO2017028299A1 (en) * | 2015-08-18 | 2017-02-23 | 深圳市华星光电技术有限公司 | Liquid crystal display panel |
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| CN1815305A (en) * | 2005-02-02 | 2006-08-09 | 精工爱普生株式会社 | Electronics device, optical panel, inspection probe, inspection device for the optical panel and inspection method for the optical panel |
| KR20080066308A (en) * | 2007-01-12 | 2008-07-16 | 삼성전자주식회사 | Display panel, method of inspecting the panel and method of manufacturing the panel |
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| CN103293795A (en) * | 2012-03-05 | 2013-09-11 | 上海中航光电子有限公司 | Electrostatic protection circuit of liquid crystal display |
| CN103293795B (en) * | 2012-03-05 | 2016-02-17 | 上海中航光电子有限公司 | A kind of electrostatic discharge protection circuit of liquid crystal display |
| CN103278723A (en) * | 2013-03-19 | 2013-09-04 | 深圳市华星光电技术有限公司 | Electrostatic protection chip detecting device and method |
| CN103278723B (en) * | 2013-03-19 | 2016-06-15 | 深圳市华星光电技术有限公司 | The detecting device of electrostatic protection chip |
| CN104112426A (en) * | 2014-06-30 | 2014-10-22 | 上海天马有机发光显示技术有限公司 | OLED pixel drive circuit, electrostatic discharge protection circuit and detection method |
| WO2017028299A1 (en) * | 2015-08-18 | 2017-02-23 | 深圳市华星光电技术有限公司 | Liquid crystal display panel |
| CN105404035A (en) * | 2015-12-08 | 2016-03-16 | 昆山龙腾光电有限公司 | Liquid crystal display panel |
| CN110488547A (en) * | 2019-09-03 | 2019-11-22 | 业成科技（成都）有限公司 | Display panel |
| CN110488547B (en) * | 2019-09-03 | 2022-06-21 | 业成科技（成都）有限公司 | Display panel |
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