CN101901795A - 功率半导体模块 - Google Patents

功率半导体模块 Download PDF

Info

Publication number
CN101901795A
CN101901795A CN200910171654XA CN200910171654A CN101901795A CN 101901795 A CN101901795 A CN 101901795A CN 200910171654X A CN200910171654X A CN 200910171654XA CN 200910171654 A CN200910171654 A CN 200910171654A CN 101901795 A CN101901795 A CN 101901795A
Authority
CN
China
Prior art keywords
metallic plate
circuit layer
power semiconductor
semiconductor modular
anodic oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN200910171654XA
Other languages
English (en)
Inventor
高山
崔硕文
俞度在
金泰贤
张范植
朴志贤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electro Mechanics Co Ltd
Original Assignee
Samsung Electro Mechanics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electro Mechanics Co Ltd filed Critical Samsung Electro Mechanics Co Ltd
Publication of CN101901795A publication Critical patent/CN101901795A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/142—Metallic substrates having insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/427—Cooling by change of state, e.g. use of heat pipes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Thermal Sciences (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

本发明披露了一种具有改善的散热性能的功率半导体模块，该模块包括：阳极氧化金属基板，该基板包括金属板、形成在金属板的表面上的阳极氧化层、以及形成在金属板上的阳极氧化层上的电路层；功率器件，连接至电路层；以及外壳，安装在金属板上，用于限定一个密封空间，该密封空间容纳用于密封电路层和功率器件的树脂密封材料。

Description

功率半导体模块
相关申请的交叉参考
本申请要求于2009年5月25日提交的题为“Power semiconductor module”的韩国专利申请第10-2009-0045332号，其全部内容结合于此作为参考。
技术领域
本发明涉及一种功率半导体模块。
背景技术
随着用于电源的电子设备近年来的发展，制造了尺寸小且密度高的电子产品。因此，当设计半导体封装件时，减小电子器件本身的尺寸并将尽可能多的器件和导线安装在预定空间内的方法被认为是重要的。封装件的布线和半导体器件的密度日益增加，并且在封装件中产生了大量热能。这种热能影响了电子产品的寿命和操作，并且高密度封装件的散热也是一个问题。
图1是示出了传统功率半导体封装件的截面图。如此图所示，包括功率器件15和控制器件13的半导体器件被焊接至作为电路板的直接铜接合(direct copper bonding，简称DCB)基板10的金属表面。DCB基板10用于使半导体器件与模块的底板20电绝缘，并且同时应该表现导热性。使用陶瓷(Al2O3、AlN、SiN、SiC)或者有机材料(环氧树脂、聚酰亚胺)来使底板20和DCB基板10相互电绝缘。
半导体器件13、15的上表面利用薄的铝线连接至金属表面的构造区。此外，无源器件(包括栅极电阻器和电流/温度传感器)可以被集成在模块中，以及保护性的驱动电路器件和电路也可以被集成在该模块中。
这种传统的功率模块封装件被配置为功率器件15和二极管被使用焊料17附着于DCB基板10，DCB基板被使用焊料23附着于由铜制成的底板20以增强热性能，并且外壳被密封。为了进行电连接，楔形接合被应用于器件13、15与基板10之间以及基板10与外壳的接头27之间。半导体线13、15和导线被硅胶封装，并且散热板25附着于底板20的另一表面。
然而，这样配置的传统功率模块封装件具有以下问题。
随着封装件的尺寸减小，必须以相同的方式置于该空间内的半导体器件的数量增加了，从而在封装件中产生了大量热能。然而，由于散热板仅附着于封装件的下表面，所以没有有效地进行散热。
此外，DCB基板10的使用需要昂贵且大尺寸的铜板20来实现散热性能。而且，因为应该执行包括半导体器件与DCB基板的接合以及DCB基板与底板的接合的两种接合工艺，所以制造工艺变得复杂。同样，由于包括半导体器件13、15与DCB基板10之间的接合接口17以及DCB基板10与底板20之间的接口的两个接口结构，而引起散热性能劣化。
发明内容
因此，鉴于现有技术中所遇到的上述问题而提出了本发明，本发明提供了一种具有改善的散热性能的功率半导体模块。
本发明的一个方面提供了一种功率半导体模块，其包括：阳极氧化金属基板，该基板包括金属板、形成在金属板的表面上的阳极氧化层、以及形成在金属板上的阳极氧化层上的电路层；功率器件，连接至电路层；以及外壳，安装在金属板上，并用于限定密封空间，该密封空间容纳用于对电路层和功率器件进行密封的树脂密封材料。
金属板可以由铝或铝合金制成，以及阳极氧化层可以是阳极氧化铝层(Al2O3)。
功率器件和棚条(booth bar)可以利用导线连接至电路层，棚条置于外壳的内壁上以与从外壳突出的铅框架接触。
此外，阳极氧化层可以形成在金属板的一个表面上，以及散热片(pin)可以形成在金属板的另一表面上。
此外，通孔可以形成金属板中，阳极氧化层可以形成在金属板的表面上和通孔的内壁上，以及电路层可以形成在金属板的两个表面上的阳极氧化层上，其中，形成在金属板的一个表面上的阳极氧化层上的电路层的一部分通过形成在通孔中的通路(via)连接至形成在金属板的另一表面上的阳极氧化层上的电路层的其他部分。
本发明的另一方面提供了一种功率半导体模块，其包括：阳极氧化金属板，该阳极氧化金属板包括形成有冷却器的金属板、形成在金属板的表面上的阳极氧化层、和形成在金属板上的阳极氧化层上的电路层；功率器件，连接至电路层；树脂密封材料，用于密封电路层和功率器件；以及外壳，安装在金属板上，用于限定容纳树脂密封材料的密封空间。
冷却器可以是被形成为穿过金属板的热导管。
热导管可以具有在其中流动的冷却剂。
金属板可以由铝或铝合金制成，以及阳极氧化层可以是阳极氧化铝层(Al2O3)。
功率器件和棚条可以利用导线连接至电路层，棚条置于壳体的内壁上以与从壳体突出的铅框架接触。
本发明的又一方面提供了一种功率半导体模块，其包括：阳极氧化金属基板，包括具有通孔和形成在其中的冷却器的金属板、形成在金属板的表面上和通孔的内壁上的阳极氧化层、以及电路层，该电路层形成在金属板的两个表面上的阳极氧化层上并通过形成在通孔中的通路在其两个部分处彼此连接；功率器件，连接至电路层；树脂密封材料，用于密封电路层和功率器件；以及外壳，安装在金属板上，用于限定容纳树脂密封材料的密封空间。
冷却器可以是形成为穿过金属板的热导管。
热导管可以具有在其中流动的冷却剂。
金属板可以由铝或铝合金制成，以及阳极氧化层可以是阳极氧化铝层(Al2O3)。
功率器件和棚条可以利用导线连接至电路层，棚条置于壳体的内壁上以与从壳体突出的铅框架接触。
从结合附图得到的以下详细描述中，将更加清楚地了解本发明的特征和优点。
此外，在本说明书和权利要求书中所使用的术语和词语不应被解释为限于典型意义或字典定义，而是基于发明人可以适当地限定由术语所暗示的概念以更好地描述他或她知道应该的实现本发明的方法所依据的准则，被解释为具有与本发明的技术方位相关的意义和概念。
附图说明
图1是示出了传统功率模块封装件的截面图；
图2是示出了根据本发明的第一实施例的功率半导体模块的截面图；
图3是示出了根据本发明的第二实施例的功率半导体模块的截面图；
图4是示出了根据本发明的第三实施例的功率半导体模块的截面图；
图5是示出了根据本发明的第四实施例的功率半导体模块的截面图；
图6是示出了根据本发明的第五实施例的功率半导体模块的截面图；以及
图7是示出了根据本发明的第六实施例的功率半导体模块的截面图。
具体实施方式
在下文中，将参考附图给出本发明的实施例的详细描述。在所有附图中，相同的参考标号是指相同或类似的元件，并且省略了冗余描述。此外，在关于本发明的已知技术由于它们使本发明的特征不清楚以及为了便于描述而被认为是不必要的情况下，可以省略对其的详细描述，
图2是示出了根据本发明的第一实施例的功率半导体模块的截面图，以下，参考以上示图描述根据第一实施例的功率半导体模块100a。
如图2所示，根据第一实施例的功率半导体模块100a包括阳极氧化金属基板(AMS)110、功率器件120a、和外壳130a。在此实施例中，使用了AMS 110，从而改善了功率半导体模块100a的散热性能。
AMS 110包括金属板112、形成在金属板112的一个表面上的阳极氧化层114、和形成在金属板的一个表面上的阳极氧化层上的电路层116a。AMS 110可以起如图1可见的底板20和DCB基板10的作用。
金属板112可以由铝(Al)或铝合金制成，作为金属材料的实例，其是相对廉价且容易购得的，并展现了极好的传热性。
阳极氧化层114的实例可以包括具有约10W/mK～30W/mK的较高传热性的阳极氧化铝层(Al2O3)。具体地，阳极氧化层114可以通过将金属板112浸入硼酸、磷酸、硫酸或铬酸的电解溶液中、然后将阳极应用于金属板112以及将阴极应用于电解溶液而形成。阳极氧化层114形成在金属板112的表面上，从而负责电绝缘功能，并且能够使电路层116a形成在该阳极氧化层上。与用于图1的DCB基板的绝缘层相比，阳极氧化层114更薄，从而能够制造微小的功率半导体模块并且还快速地将从功率器件120a产生的热量传递至金属板112，导致散热效率增大。
电路层116a(其形成在金属板112的一个表面上的阳极氧化层114上)通过第二导线126a连接至功率器件120a，并且还通过第三导线128a连接至棚条Ba，该棚条被置于壳体130a的内壁以与从外壳130a突出的铅框架La接触，从而可以与外壳130a的外部连通。
作为高功率半导体芯片的功率器件120a(包括绝缘栅极双极晶体管、二极管或控制器件)被使用焊料122a而附着于电路层116a。功率器件120a使用第一导线124a被互连，并且使用第二导线126a连接至电路层116a。
外壳130a被安装在金属板112上，以限定容纳树脂密封材料132a的密封空间。树脂密封材料132a被导入密封空间内，从而防止电路层116a、功率器件120a和第一至第三导线124a、126a、128a受到外部冲击或污染。
外壳130a包括铅框架La和棚条Ba，其中，铅框架被形成为从该外壳突出并连接至电路层116a以提供功率器件120a的驱动信号，以及棚条被置于该外壳的内部上以与铅框架La接触。
此外，盖体Ca可以被安装于外壳130a的上部，以便防止树脂密封材料132a到外部。
图3是示出了根据本发明的第二实施例的功率半导体模块的截面图。在第二实施例的描述中，与第一实施例的元件相同或类似的元件由相同的参考标号表示，并且省略了冗余描述。
如图3所示，根据第二实施例的功率半导体模块100b被配置成根据图2的第一实施例的功率半导体模块100a的金属板112具有热辐射片112a。具体地，功率半导体模块形成在热辐射片112a的一个表面上，这样增加了热辐射片的表面面积，从而改善了热辐射性能。
在第二实施例中，因为热辐射片112a被用作AMS 110a的一部分，所以既不需要如图1所示的附加热辐射板25，也不需要用于附着散热板25的另一构件。
图4和图5是分别示出了根据本发明的第三和第四实施例的功率半导体模块的截面图。在这些实施例的描述中，与先前实施例的元件相同或类似的元件由相同的参考标号指定，并且省略了冗余描述。
如图4和图5所示，根据第三实施例和第四实施例的功率半导体器件100c、100d被配置为，冷却器被设置在金属板112中以便改善散热性能。
冷却器可以是被形成为穿过金属板112的热导管113a(其内部是在真空中)(图4)、或者用于容纳冷却剂113b的切口(slit)形成在金属板112中并且冷却剂113b被导入这些切口从而实现附加散热功能的结构(图5)。这样，冷却剂113b使从功率器件120a和电路层116a传递的热能消散，同时蒸发并冷凝。
通常，在包括当进行操作时产生很多热能的高功率半导体芯片的功率半导体模块中，就可靠性而言所产生的热能的消散是非常重要的。在本实施例中，冷却剂被另外提供，从而实现了另外改善的散热性能。
图6是示出了根据本发明的第五实施例的功率半导体模块的截面图。在此实施例的描述中，与先前实施例的原相同或类似的元件由相同的参考标号表示，并且省略了冗余描述。
如图6所示，根据第五实施例的功率半导体模块100e被配置成功率半导体模块形成在金属板112的两个表面上(对称结构)，并且使用形成在金属板112内的通路118而彼此相连接，这不同于根据第一实施例的功率半导体模块100a。
具体地，在根据第五实施例的功率半导体模块100e中，AMS110包括分别形成在其上表面和下表面上的第一电路层116a和第二电路层116b，以及功率器件120a、120b和外壳130a、130b也分别被安装在第一电路层116a和第二电路层116b上。第一电路层116a和第二电路层116b通过形成金属板112的通孔内的通路118而彼此连接。
图7是示出了根据本发明的第六实施例的功率半导体模块的截面图。在此实施例的描述中，与先前实施例的元件相同或类似的元件由相同的参考标号来表示，并且省略了冗余描述。
如图7所示，根据第六实施例的功率半导体模块100f被配置为，诸如热导管113a的冷却器形成在根据第五实施例的功率半导体模块100e的金属板内，从而改善了散热性能。
虽然未示出，图5的冷却器可以被应用于金属板112。
如上文所述，本发明提供了一种功率半导体模块。根据本发明，功率半导体模块包括AMS，该AMS包括接口数量比传统的DCB基板更少且更薄的阳极氧化层，从而改善了散热性能。此外，冷却器附加地被设置于AMS的金属板，从而附加地改善了散热性能。
根据本发明，与传统的DCB基板相比排除了对附加铜板的需要且廉价的AMS的使用可以降低制造成本。同样，功率半导体器件可以形成在金属板的上表面和下表面上，从而排除了对附加散热板的需要。
根据本发明，由于AMS的使用而不需要铜板，因而，模块结构变得简单，此外，功率半导体模块由于薄的阳极氧化层而变微小。
根据本发明，由于功率半导体模块形成在金属板的上表面和下表面上的对称结构，可以使由于压力而导致的变形最小化。同样，可以通过形成在金属板内的通路来确保上部功率半导体模块和下部功率半导体模块的连接可靠性。
虽然出于说明性目的描述了本发明的实施例，但是本领域的技术人员应了解，在不背离附图所披露的本发明的范围和精神的情况下，可以进行各种变形、添加和替换。因此，还应该理解这样的变形、添加和替换落入本发明的范围内。

Claims (15)

1.一种功率半导体模块，包括：
阳极氧化金属基板，包括金属板、形成在所述金属板的表面上的阳极氧化层、以及形成在所述金属板上的所述阳极氧化层上的电路层；
功率器件，连接至所述电路层；以及
外壳，安装在所述金属板上，并用于限定一个密封空间，所述密封空间容纳用于密封所述电路层和所述功率器件的树脂密封材料。
2.根据权利要求1所述的功率半导体模块，其中，所述金属板包括铝或铝合金，以及所述阳极氧化层是阳极氧化铝层(Al2O3)。
3.根据权利要求1所述的功率半导体模块，其中，所述功率器件和置于所述外壳的内壁上以与从所述外壳突出的铅框架相接触的棚条利用导线连接至所述电路层。
4.根据权利要求1所述的功率半导体模块，其中，所述阳极氧化层形成在所述金属板的一个表面上，以及散热片形成在所述金属板的另一表面上。
5.根据权利要求1所述的功率半导体模块，其中，通孔形成在所述金属板中，所述阳极氧化层形成在所述金属板的表面上和所述通孔的内壁上，以及所述电路层形成在所述金属板的两个表面上的所述阳极氧化层上，其中，形成在所述金属板的一个表面上的所述阳极氧化层上的所述电路层的一部分通过形成在所述通孔中的通路连接至形成在所述金属板的另一表面上的所述阳极氧化层上的所述电路层的其他部分。
6.一种功率半导体模块，包括：
阳极氧化金属板，包括其中形成有冷却器的金属板、形成在所述金属板的表面上的阳极氧化层、以及形成在所述金属板上的所述阳极氧化层上的电路层；
功率器件，连接至所述电路层；
树脂密封材料，用于密封所述电路层和所述功率器件；以及
外壳，安装在所述金属板上，并用于限定容纳所述树脂密封材料的密封空间。
7.根据权利要求6所述的功率半导体模块，其中，所述冷却器是被形成为穿过所述金属板的热导管。
8.根据权利要求7所述的功率半导体模块，其中，所述热导管具有在其中流动的冷却剂。
9.根据权利要求6所述的功率半导体模块，其中，所述金属板包括铝或铝合金，以及所述阳极氧化层可以是阳极氧化铝层(Al2O3)。
10.根据权利要求6所述的功率半导体模块，其中，所述功率器件和置于所述壳体的内壁上以与从所述壳体突出的铅框架相接触的棚条利用导线连接至所述电路层。
11.一种功率半导体模块，包括：
阳极氧化金属基板，包括金属板、阳极氧化层、以及电路层，所述金属板具有通孔和形成在所述金属板中的冷却器，所述阳极氧化层形成在所述金属板的表面上和所述通孔的内壁上，所述电路层形成在所述金属板的两个表面上的所述阳极氧化层上并通过形成在所述通孔中的通路在其两个部分处彼此连接；
功率器件，连接至所述电路层；
树脂密封材料，用于密封所述电路层和所述功率器件；以及
外壳，安装在所述金属板上，并用于限定容纳所述树脂密封材料的密封空间。
12.根据权利要求11所述的功率半导体模块，其中，所述冷却器是被形成为穿过所述金属板的热导管。
13.根据权利要求11所述的功率半导体模块，其中，所述热导管具有在其中流动的冷却剂。
14.根据权利要求11所述的功率半导体模块，其中，所述金属板包括铝或铝合金，以及所述阳极氧化层是阳极氧化铝层(Al2O3)。
15.根据权利要求11所述的功率半导体模块，其中，所述功率器件和置于所述外壳的内壁上以与从所述外壳突出的铅框架相接触的棚条利用导线连接至所述电路层。
CN200910171654XA 2009-05-25 2009-09-02 功率半导体模块 Pending CN101901795A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0045332 2009-05-25
KR1020090045332A KR20100126909A (ko) 2009-05-25 2009-05-25 전력반도체 모듈

Publications (1)

Publication Number Publication Date
CN101901795A true CN101901795A (zh) 2010-12-01

Family

ID=43124045

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200910171654XA Pending CN101901795A (zh) 2009-05-25 2009-09-02 功率半导体模块

Country Status (3)

Country Link
US (1) US20100295172A1 (zh)
KR (1) KR20100126909A (zh)
CN (1) CN101901795A (zh)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103050470A (zh) * 2012-12-26 2013-04-17 广东美的电器股份有限公司 智能功率模块及其制作方法
WO2013091141A1 (zh) * 2011-12-21 2013-06-27 武汉飞恩微电子有限公司 功率器件封装结构及封装工艺
CN103687419A (zh) * 2012-09-04 2014-03-26 富瑞精密组件（昆山）有限公司 散热器及其制造方法
CN103988295A (zh) * 2011-12-21 2014-08-13 武汉飞恩微电子有限公司 用于高功率电子元件封装含微通道的引线框架焊盘及封装结构和工艺
CN105762130A (zh) * 2014-12-15 2016-07-13 财团法人工业技术研究院 功率模块

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8552283B2 (en) * 2010-01-11 2013-10-08 Toyota Motor Engineering & Manufacturing North America, Inc. Thermoelectric application for waste heat recovery from semiconductor devices in power electronics systems
KR101343140B1 (ko) 2010-12-24 2013-12-19 삼성전기주식회사 3ｄ 파워모듈 패키지
KR101222809B1 (ko) * 2011-06-16 2013-01-15 삼성전기주식회사 전력 모듈 패키지 및 그 제조방법
KR101255930B1 (ko) * 2011-07-04 2013-04-23 삼성전기주식회사 전력 모듈 패키지 및 그 제조방법
KR101255935B1 (ko) 2011-07-08 2013-04-23 삼성전기주식회사 전력 모듈 패키지 및 그 제조방법
JP5588956B2 (ja) * 2011-11-30 2014-09-10 株式会社 日立パワーデバイス パワー半導体装置
DE102012205590B4 (de) * 2012-04-04 2023-11-02 Robert Bosch Gmbh Anordnung mit einem Leistungshalbleiter, einem Schaltungsträger, einem kapillaren und/oder porösen Körper und einer Wärmesenke, Verfahren zur Herstellung einer Anordnung und Verfahren zum Betrieb einer Kühlung eines Leistungshalbleiters mittels eines Wärmetransportmediums
US8878305B2 (en) * 2012-10-04 2014-11-04 Toyota Motor Engineering & Manufacturing North America, Inc. Integrated power module for multi-device parallel operation
KR101443980B1 (ko) * 2012-11-27 2014-09-23 삼성전기주식회사 접속핀 및 이를 갖는 전력 모듈 패키지
US20140284040A1 (en) 2013-03-22 2014-09-25 International Business Machines Corporation Heat spreading layer with high thermal conductivity
US9418921B2 (en) 2014-12-15 2016-08-16 Industrial Technology Research Institute Power module
US9240370B1 (en) * 2014-12-15 2016-01-19 Industrial Technology Research Institute Power module
CN105227129B (zh) * 2015-09-22 2017-11-28 常州星海电子股份有限公司 高导热贴片旁路二极管
CN108257922A (zh) * 2016-12-29 2018-07-06 比亚迪股份有限公司 一种散热基板及其制备方法和应用以及电子元器件
DE102017205813A1 (de) * 2017-04-05 2018-10-11 Mahle International Gmbh Verfahren zum Herstellen einer Kühlvorrichtung, eine Kühlvorrichtung und eine Kühlanordnung
CN110676237A (zh) * 2019-09-15 2020-01-10 天水华天电子集团股份有限公司 基于微小级别ssop封装的散热智能功率半导体模块及其制备方法与应用

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3357220B2 (ja) * 1995-07-07 2002-12-16 三菱電機株式会社 半導体装置
JP4044265B2 (ja) * 2000-05-16 2008-02-06 三菱電機株式会社 パワーモジュール
KR100723454B1 (ko) * 2004-08-21 2007-05-30 페어차일드코리아반도체 주식회사 높은 열 방출 능력을 구비한 전력용 모듈 패키지 및 그제조방법

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013091141A1 (zh) * 2011-12-21 2013-06-27 武汉飞恩微电子有限公司 功率器件封装结构及封装工艺
CN103988295A (zh) * 2011-12-21 2014-08-13 武汉飞恩微电子有限公司 用于高功率电子元件封装含微通道的引线框架焊盘及封装结构和工艺
CN104011855A (zh) * 2011-12-21 2014-08-27 武汉飞恩微电子有限公司 功率器件封装结构及封装工艺
CN103988295B (zh) * 2011-12-21 2016-08-17 南京皓赛米电力科技有限公司 用于高功率电子元件封装含微通道的引线框架焊盘及封装结构和工艺
CN103687419A (zh) * 2012-09-04 2014-03-26 富瑞精密组件（昆山）有限公司 散热器及其制造方法
CN103050470A (zh) * 2012-12-26 2013-04-17 广东美的电器股份有限公司 智能功率模块及其制作方法
CN103050470B (zh) * 2012-12-26 2016-08-10 美的集团股份有限公司 智能功率模块及其制作方法
CN105762130A (zh) * 2014-12-15 2016-07-13 财团法人工业技术研究院 功率模块
CN105762130B (zh) * 2014-12-15 2019-04-05 财团法人工业技术研究院 功率模块

Also Published As

Publication number Publication date
KR20100126909A (ko) 2010-12-03
US20100295172A1 (en) 2010-11-25

Similar Documents

Publication Publication Date Title
CN101901795A (zh) 功率半导体模块
CN101958307B (zh) 功率半导体模块及其制造方法
US10002821B1 (en) Semiconductor chip package comprising semiconductor chip and leadframe disposed between two substrates
US10283436B2 (en) Power electronics module with first and second coolers
US8890310B2 (en) Power module package having excellent heat sink emission capability and method for manufacturing the same
CN101989589B (zh) 功率器件封装及其制造方法
US8674492B2 (en) Power module
WO2018227655A1 (zh) 一种低寄生电感功率模块及双面散热低寄生电感功率模块
US9153514B2 (en) Power module package
KR101278393B1 (ko) 파워 패키지 모듈 및 그의 제조방법
JPH09129822A (ja) 半導体装置
CN102034774A (zh) 一种电力电子装置
US10945333B1 (en) Thermal management assemblies having cooling channels within electrically insulated posts for cooling electronic assemblies
WO2012081434A1 (ja) 半導体装置
US11153996B2 (en) Thermal management assemblies for electronic assemblies mounted on a motor end
US10888036B1 (en) Thermal management assemblies for electronic assemblies circumferentially mounted on a motor
WO2018137560A1 (zh) 一种功率模块及其制造方法
CN108346628B (zh) 一种功率模块及其制造方法
KR101067190B1 (ko) 파워 패키지 모듈 및 그 제조방법
KR102405129B1 (ko) 히트싱크 노출형 반도체 패키지 및 이의 제조방법
US20230014380A1 (en) Semiconductor Power Module with Two Different Potting Materials and a Method for Fabricating the Same
CN214705909U (zh) 一种3d双面散热封装结构的功率模块
CN214672580U (zh) 集成晶闸管模块的新型封装结构
CN114334846A (zh) 功率器件封装装置及方法
CN117613014A (zh) 一种半导体结构及其制备方法、功率模块

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20101201