CN101900825A - X-ray sensor, manufacture method and driving method thereof - Google Patents
X-ray sensor, manufacture method and driving method thereof Download PDFInfo
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Abstract
The invention provides an X-ray sensor comprising scanning lines, data lines, a pixel unit array, a data driving circuit and a scanning driving circuit, wherein the scanning lines and the data lines are arranged in a cross way; the pixel unit array is separated by the scanning lines and the data lines; the data driving circuit is connected with the data lines; and the scanning driving circuit is connected with the scanning lines. In the pixel unit array, each pixel unit is connected with at least two scanning lines, at least two rows of pixel units share one data line, and the pixel unit comprises a photoelectric sensing element and a switch element. Correspondingly, the invention also provides a driving method and a manufacture method of the X-ray sensor. The X-ray sensor and the manufacture method thereof can decrease the production cost of the X-ray sensor and are suitable for occasions with low requirement on data signal collecting rate of metal inspection, inspection equipment, measuring control field and the like.
Description
Technical field
The present invention relates to sensor technical field, particularly a kind of X ray sensor and manufacture method and driving method.
Background technology
Along with social development and continuous progress in science and technology, X ray sensor has not only been played the part of crucial role in the medical image field, has also obtained using widely in other fields such as metal defect detection.In recent years, along with various New X radiation transducers emerge in an endless stream, the manufacturing cost of traditional digital X-ray sensor also more and more receives everybody concern, and how to reduce production costs under the precondition that does not influence the product usability becomes in the industry heat subject.
The structure of plate type X-ray sensor and driving method and LCD are more close, and Fig. 1 is the structural representation of existing a kind of X ray sensor, and Fig. 2 is and Fig. 1 corresponding work schematic diagram.X ray sensor comprises the sweep trace 1 of many mutual cross arrangements and data line 2 and the array of the pixel cell that is separated out by sweep trace 1 and data line 2, each pixel cell is by a photodiode 4 and a field effect transistor (Field Effect Transistor, FET) 3 form, wherein, the sweep trace 1 that each field effect transistor 3 is adjacent links to each other, and each photodiode 4 links to each other by the data line 2 that field effect transistor 3 is adjacent.
In the X ray sensor course of work, photodiode induction X ray produces photosignal, by sweep trace each pixel cell is applied the on off state that the driven sweep signal comes the controlling filed effect transistor, thereby reach the read functions of indirect control data Acquisition Circuit the photosignal of each photodiode generation.When field effect transistor is opened, the photo-signal that corresponding photodiode produces can be connected to the data line of photodiode output terminal and gather, and then finishes acquisition function to the photodiode photosignal by the sequential of gated sweep line and data line drive signal.
Traditional X-ray plane sensor adopts the type of drive of lining by line scan, and promptly a sweep trace only drives the on off state of coupled delegation's field effect transistor, thereby controls the reading state of the photodiode photosignal that links to each other with this field effect transistor; When this row field effect transistor was opened, the photo-signal that its corresponding photodiode produced just can be read from corresponding data line by data acquisition circuit.
The X-ray plane sensor data signal acquisition rate of this structure is higher, can satisfy the requirement of static number image Medical Devices.But, in some application scenario, such as metal defect detection, Cargo Inspection equipment and measurement and control area etc., to the not too high requirement of data-signal acquisition rate, the production cost that at this moment reduces X ray sensor just becomes the focus of paying close attention to the most in the industry.
Summary of the invention
The problem that the present invention solves provides a kind of X ray sensor and manufacture method and driving method, can reduce the production cost of X ray sensor, adapt to metal defect detection, Cargo Inspection equipment and measurement and control area etc. the data-signal acquisition rate the too not high application scenario that requires.
For addressing the above problem, the invention provides a kind of X ray sensor, comprising:
The sweep trace of cross arrangement and data line,
The pixel unit array that sweep trace and data line are separated out,
The data drive circuit that is connected with data line,
The scan drive circuit that is connected with sweep trace; Wherein,
In the described pixel unit array, the described pixel cell of every row links to each other with at least two sweep traces, and the shared described data line of at least two row pixel cells, described pixel cell comprises photovoltaic sensing element and on-off element.
Described at least two row pixel cells are adjacent successively.
The input end that is positioned at the described pixel cell of odd column in described every capable pixel cell all connects a described sweep trace, the input end that is positioned at the described pixel cell of even column in described every capable pixel cell all connects another described sweep trace, and the output terminal of described adjacent two row pixel cells links to each other with same data line.
Described each row pixel cell is divided into three groups, then the input end of first group of pixel cell all connects first sweep trace, the input end of second group of pixel cell all connects second sweep trace, the input end of the 3rd group of pixel cell all connects three scan line, and the output terminal of three adjacent row pixel cells links to each other with same data line.
One end of described pixel cell connects public electrode, and an other end is connected to described data line by described on-off element.
Described photovoltaic sensing element comprises photodiode, and described photodiode output links to each other with described data line by described on-off element.
Described on-off element comprises field effect transistor, and the source electrode of described field effect transistor connects described photovoltaic sensing element output terminal, and drain electrode connects described data line, and grid connects described sweep trace.
A kind of driving method of X ray sensor also is provided, comprises:
Described scan drive circuit is distinguished the input scan signals by interleaved mode at least two sweep traces that connect every capable pixel cell,
According to the on off state of described sweep signal control pixel cell,
Collection is in the photosignal of the pixel cell of opening state.
The corresponding manufacture method that a kind of X ray sensor also is provided, described X sensor has the array that a plurality of pixel cells are formed, and described pixel cell comprises photovoltaic sensing element district and on-off element district, and described manufacture method may further comprise the steps:
Form the grid layer on substrate, described grid layer comprises: at least two sweep traces that link to each other with each row pixel cell, and, the grid that is positioned at the on-off element district that is connected with described sweep trace;
Covering gate dielectric layer on described grid layer;
Form active layer on the gate dielectric layer in described on-off element district, the position of described active layer is corresponding with described grid;
Form source-drain layer, described source-drain layer comprises: source electrode on the described active layer and drain electrode, and, the data line that is connected with described source electrode; On the gate dielectric layer in described photovoltaic sensing element district, form the bottom electrode conductive layer of photovoltaic sensing element;
On described bottom electrode conductive layer, form photoelectric conversion layer;
On the surface that entire substrate exposes, cover passivation layer, form opening at the passivation layer that is arranged in described photovoltaic sensing element district, to expose described photoelectric conversion layer;
On described photoelectric conversion layer, form the top electrode conductive layer of photovoltaic sensing element.
Described grid layer also comprises soldering pad layer, and is further comprising the steps of behind the described formation gate dielectric layer:
Form via hole in the gate dielectric layer on described soldering pad layer, to expose described soldering pad layer.
Further comprising the steps of after the formation photoelectric conversion layer on described bottom electrode conductive layer:
On described photoelectric conversion layer, form transparent masking layer.
The material of described transparent masking layer is a transparent conductive oxide.
Described transparent conductive oxide is tin indium oxide or indium zinc oxide.
Further comprising the steps of after the covering passivation layer on the surface that entire substrate exposes: as on described passivation layer, to form common electrode layer.
Described common electrode layer and described top electrode conductive layer form in same processing procedure, and are same material.
The material of described common electrode layer is a transparent conductive oxide.
Described transparent conductive oxide is tin indium oxide or indium zinc oxide.
Also comprise after on described passivation layer, forming common electrode layer: be positioned on the common electrode layer in on-off element district and form photoresist layer.
The material of described photoresist layer is metal M o.
Further comprising the steps of after the top electrode conductive layer of formation photovoltaic sensing element on described photoelectric conversion layer: as on the exposed surface of entire substrate, to form protective seam.
Described protective seam is a silicon nitride.
Described grid layer is one or more the combined alloy among Mo, Al or the Cr.
Described grid layer is the alloy of Mo, Al.
Described source-drain layer is one or more the combined alloy among Mo, Al or the Nd.
Described source-drain layer is the alloy of Mo, Al.
Described gate dielectric layer is a silicon nitride.
Described photoelectric conversion layer comprises amorphous silicon layer.
Described amorphous silicon layer is the stepped construction of n type amorphous silicon layer, intrinsic amorphous silicon layer and p type amorphous silicon layer.
Described active layer comprises amorphous silicon layer.
Described amorphous silicon layer is the rhythmo structure of intrinsic amorphous silicon layer and n type amorphous silicon layer.
Described passivation layer is a p type silicon nitride.
Described source-drain layer and described bottom electrode form in same processing procedure, and are same material.
Compared with prior art, technique scheme has the following advantages:
Described X ray sensor and manufacture method thereof are owing to adopt the structure of at least two scanning line driving one-row pixels unit, so the relative traditional X-ray radiation transducers of the quantity of data line structure reduces half at least, the quantity of corresponding data-driven IC module also reduces half at least, and since the cost of data-driven IC module with respect to high a lot (the every about 800 yuan of RMB of data-driven IC module of turntable driving IC module, every about 2-3 RMB of unit of turntable driving IC module), so though the quantity of turntable driving IC module doubles, but get on very well on the whole, the relative traditional structure X ray sensor of production cost still descends a lot, the complexity that does not need to increase peripheral drive circuit promptly can reduce production costs, also be enough to satisfy some application scenarios not high, for example metal defect detection and the examination of cargo etc. to the data acquisition rate.And, on the basis that reduces production costs, do not reduce the aperture opening ratio of X ray sensor.
The driving method of described X ray sensor adopts interlace mode, every sweep trace input drive signal successively, can effectively prevent crosstalking between adjacent two sweep traces.
Description of drawings
Shown in accompanying drawing, above-mentioned and other purpose, feature and advantage of the present invention will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing, focus on illustrating purport of the present invention by physical size equal proportion convergent-divergent.
Fig. 1 is the structural representation of existing a kind of X ray sensor;
Fig. 2 is and Fig. 1 corresponding work schematic diagram;
Fig. 3 is the structural representation of X ray sensor among the embodiment one;
Fig. 4 is and Fig. 3 corresponding work schematic diagram;
Fig. 5 is the synoptic diagram of the X ray sensor of the manufacture method manufacturing among the employing embodiment two;
Fig. 6 is the sectional view of A-A direction among Fig. 5;
Fig. 7 to Figure 14 is the synoptic diagram of the manufacture method of X ray sensor among the embodiment two.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.
Set forth a lot of details in the following description so that fully understand the present invention, implement but the present invention can also adopt other to be different from alternate manner described here, so the present invention has not been subjected to the restriction of following public specific embodiment.
Secondly, the present invention is described in detail in conjunction with synoptic diagram, when the embodiment of the invention is described in detail in detail; for ease of explanation; the sectional view of indication device structure can be disobeyed general ratio and be done local the amplification, and described synoptic diagram is example, and it should not limit the scope of protection of the invention at this.The three dimensions size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
Based on traditional X ray sensor mainly is at medical field, but in applications such as the metal defect detection and the examinations of cargo, requirement for the X ray sensor data acquisition rate is not very high, and in this case, how to reduce production costs becomes the primary factor that the manufacturer considers.At the problems referred to above, the inventor discovers, with reference to shown in Figure 2, in the production cost of X ray sensor, because the cost of data-driven (Source Driver) IC module has occupied the major part of cost than higher.If can under the precondition that does not influence the product usability, reduce the quantity of data-driven (Gate Driver) IC module, so just can significantly reduce the production cost of X ray sensor.
Based on this, the present invention proposes a kind of X-ray plane sensor of new structure, relative traditional structure X ray sensor, the quantity of sweep trace increases many times in the described X ray sensor, and corresponding data line reduces many times, just need the multi-strip scanning line to drive at each row pixel cell like this, the multiple row pixel cell can a shared data line.
X ray sensor provided by the invention comprises: the sweep trace of cross arrangement and data line, the pixel unit array that sweep trace and data line are separated out, the data-driven IC that is connected with data line, the turntable driving IC that is connected with sweep trace; Wherein, in the described pixel unit array, each row pixel cell links to each other the shared data line of at least two row pixel cells at least with two sweep traces.In other words, each row pixel cell is divided at least two groups, the input end of every group of pixel cell links to each other with corresponding turntable driving IC by different sweep traces respectively, and the output terminal that belongs to not pixel cell on the same group is continuous with corresponding data-driven IC by same data line.
Describe an embodiment of described X ray sensor in detail below in conjunction with accompanying drawing.
Embodiment one
Fig. 3 is the structural representation of X ray sensor in the present embodiment, and Fig. 4 is and Fig. 3 corresponding work schematic diagram.As shown in Figure 3, described X ray sensor comprises: the sweep trace 11 of cross arrangement and data line 12, the array of the pixel cell 10 that sweep trace 11 and data line 12 are separated out, the data-driven IC that is connected with data line 12 (Source Driver), the turntable driving IC (GateDriver) that is connected with sweep trace 11; Wherein, in the described pixel unit array, each row pixel cell 10 links to each other with two sweep trace 11a, 11b, and the shared data line 12 of two row pixel cell 10a, 10b.
As shown in Figure 4, each row pixel cell 10 is divided into two groups of odd number, even numbers according to the row at place, an end that then is positioned at the pixel cell 10a of odd column all connects sweep trace 11a, and the input end that is positioned at the pixel cell 10b of even column all connects sweep trace 11b, and the two adjacent row pixel cell 10a and the other end of 10b link to each other with same data line 12.
And each bar sweep trace 11 all connects a turntable driving IC module (not shown) in the turntable driving IC, and each bar data line 12 all connects a data drive IC module in the data drive IC.
Described pixel cell 10 comprises: photovoltaic sensing element and the on-off element that links to each other with described photovoltaic sensing element.In the present embodiment, described on-off element for example is a field effect transistor 13, and described photovoltaic sensing element for example is a photodiode 14; Wherein, the input end of described pixel cell 10 is the grid of field effect transistor 13, and the output terminal of pixel cell 10 is the drain electrode of field effect transistor 13.The output terminal of described photodiode 14 links to each other with data line 12 by field effect transistor 13.The source electrode of field effect transistor 13 connects photodiode 14 output terminals, and drain electrode connects data line 12, and grid connects sweep trace 11.
As shown in Figure 3 and Figure 4, two row pixel cells, 10 shared data lines 12 of the X ray sensor of this structure, promptly field effect transistor 13a among the odd column pixel cell 10a of every capable pixel cell and the field effect transistor 13b among the even column pixel cell 10b are connected respectively on two sweep trace 11a and the 11b.So, the X ray sensor of the relative traditional structure of quantity of sweep trace just doubles, and corresponding, the quantity of turntable driving IC module also doubles accordingly; For data line, adjacent two row pixel cell 10a, the shared data line 12 of 10b, just can realize control by sequential control to odd column in this row pixel cell and even column signal reading state to two sweep traces, so, for the X ray sensor of traditional structure, the quantity of data line reduces half on the whole, and corresponding, the quantity of data-driven IC module also reduces half accordingly.
When described X ray sensor is worked, type of drive also is to adopt the single file scan mode, and promptly two sweep traces only drive the one group field effect transistor corresponding with it, and irradiate light is to photodiode 14, photodiode 14 can form a photo-signal owing to illumination produces electron drift; When to sweep trace 11a (being connected) when applying driving voltage with the grid of field effect transistor 13a, in this row pixel cell, the field effect transistor 13a of odd column pixel cell 10a is opened, and the photo-signal of the photodiode 14a that it is corresponding just can be read from its corresponding data line 12a by the data acquisition circuit (not shown); Same principle, when to sweep trace 11b (being connected) when applying driving voltage with the grid of field effect transistor 13b, the field effect transistor 13b of even column pixel cell 10b is opened, and the photo-signal of the photodiode 14b that it is corresponding just can be read from its corresponding data line 12b by the data acquisition circuit (not shown).Just can realize the reading of entire row of pixels unit light electric signal by sequential control two sweep trace 11a, 11b, and the like line by line or staggered scanning, can read the photosignal of whole pixel unit array.
The X ray sensor of present embodiment is owing to adopt the structure of two scanning line driving one-row pixels unit, so the relative traditional structure of the quantity of data line reduces half, the quantity of corresponding data-driven IC module also reduces half, and since the cost of data-driven IC module with respect to turntable driving IC module than higher, so though the quantity of turntable driving IC module doubles, but get on very well on the whole, the relative traditional structure X ray sensor of production cost still descends a lot, the complexity that does not need to increase peripheral drive circuit promptly can reduce production costs, be enough to satisfy some application scenarios not high, for example metal defect detection and the examination of cargo etc. to the data acquisition rate.And, on the basis that reduces production costs, do not reduce the aperture opening ratio of X ray sensor.
In the present embodiment, strange, the even two shared data lines of pixel cell that are listed as that the position is adjacent, in addition, also can be strange, the shared data line of idol two row pixel cells that the position is separated by, and each row pixel cell still is divided into two groups of odd number, even numbers according to column, connect two different scanning lines respectively, other structures are identical with above-mentioned X ray sensor with principle of work, no longer repeat to give unnecessary details.
In addition, the driving method of X ray sensor described in the present embodiment may further comprise the steps:
Step S1: by interleaved mode pair two sweep traces difference input scan signals that are connected with every capable pixel cell, wherein, the input end that is positioned at the described pixel cell of odd column in described every capable pixel cell all connects a described sweep trace, the input end that is positioned at the described pixel cell of even column in described every capable pixel cell all connects another described sweep trace, and the output terminal of described adjacent two row pixel cells links to each other with same data line.For example, the pixel cell of odd column is imported first sweep signal, and the pixel cell of even column is imported second sweep signal;
Step S2: according to the on off state of described sweep signal (first sweep signal and second sweep signal) control pixel cell, for example, to the field effect transistor input high level, then pixel cell is opened, to the field effect transistor input low level then pixel cell close;
Step S3: the photosignal of gathering the pixel cell that is in opening state.
Described interleaved mode for example is following driving order:
gate1--＞gate3--＞gate2--＞gate4--＞gate5--＞gate7--＞gate6--＞gate8；
Also can be gate1--＞gate3--＞gate5--＞gate2--＞gate4--＞gate6--＞gate7--＞gate9.
Wherein, gate1～9 expression sweep traces.
Among other embodiment of the present invention, the scanning line driving more than two is with delegation's pixel cell, and its driving method also is to adopt interleaved mode, every a sweep trace input drive signal.The present invention adopts interleaved mode can effectively prevent crosstalking between adjacent two sweep traces.
Describe an embodiment of described X ray sensor manufacture method in detail below in conjunction with accompanying drawing.
Embodiment two
Fig. 5 is the synoptic diagram of the X ray sensor of the manufacture method manufacturing in the employing present embodiment, and Fig. 6 is the sectional view of A-A direction among Fig. 5, and Fig. 7 to Figure 14 is the synoptic diagram of described manufacture method.
Described X ray sensor has the array that a plurality of pixel cells are formed, and described pixel cell comprises photovoltaic sensing element district F and on-off element district E, the following describes concrete technology and realizes:
Steps A 1: as shown in Figure 7, form grid layers (Gate layer) on substrate 100, described grid layer comprises: at least two sweep traces that link to each other with each row pixel cell, and, the grid that is positioned at the on-off element district 102 that is connected with described sweep trace; Promptly first sweep trace 101 and the second sweep trace (not shown) also comprise the soldering pad layer (not shown).For example, deposit the first metal layer (not shown) earlier, utilize light shield B1 to carry out photoetching process and be covered in photoresist layer (not shown) on the described the first metal layer with patterning, with described photoresist layer is the mask etching the first metal layer, to form the grid 102 of first sweep trace 101, second sweep trace and on-off element.Described the first metal layer is one or more the combined alloy among Mo, Al or the Cr, is preferably the alloy of Mo, Al.
Steps A 2: as shown in Figure 8, covering gate dielectric layer 103 on described grid layer then forms active layer (Active layer) 104 on the gate dielectric layer 103 of described on-off element district E, and the position of described active layer 104 is corresponding with the grid of on-off element 102; Described active layer 104 comprises amorphous silicon layer, and preferred described amorphous silicon layer is the semiconductor island 104 that the rhythmo structure of intrinsic amorphous silicon layer and n type amorphous silicon layer is formed.Concrete, deposition covers the gate dielectric layer 103 of described grid layer, on described gate dielectric layer 103, deposit amorphous silicon film and n type amorphous silicon film successively then, utilize light shield B2 to expose and etching, remove the amorphous silicon film and the n type amorphous silicon film of part, with the formation semiconductor island 104 corresponding with grid 102 positions, and form the conducting channel (not shown) in active layer, wherein gate dielectric layer is also as the insulation course between grid and the source/drain electrode.
Steps A 3: described grid layer also comprises soldering pad layer, form the via hole (not shown) in the gate dielectric layer on described soldering pad layer, to expose described soldering pad layer, concrete, expose and etching by light shield B3, on soldering pad layer, form via hole, thereby can allow source/drop ply and grid layer in the conducting of soldering pad layer place.
Steps A 4: form source-drain layer, described source-drain layer comprises: source electrode on the described active layer and drain electrode, and, the data line that is connected with described source electrode; As shown in Figure 9, on the gate dielectric layer 103 of described photovoltaic sensing element district F, form the bottom electrode conductive layer 105 of photovoltaic sensing element.Concrete, deposit second metal level, then utilize light shield B4 to expose and etching, remove second metal level of part, to form described data line and source/utmost point.Described second metal level is one or more the combined alloy among Mo, Al or the Nd, is preferably Mo, Al alloy.
Steps A 5: as shown in figure 10, on described bottom electrode conductive layer 105, form photoelectric conversion layer (Diodelayer) 106.Concrete, deposited amorphous silicon layer (not shown) utilizes light shield B5 to expose and etching, removes the amorphous silicon layer of part, to form photoelectric conversion layer 106, realizes the photosignal translation function.Described amorphous silicon layer for example is the stepped construction of n type amorphous silicon layer, intrinsic amorphous silicon layer and p type amorphous silicon layer.
Steps A 6: as shown in figure 11, form transparent masking layer (Caplayer) 107 on described photoelectric conversion layer 106, the material of this transparent masking layer 107 comprises transparent conductive oxide, for example tin indium oxide (ITO) or indium zinc oxide (IZO).Concrete, deposition ITO film utilizes light shield B6 to expose and etching; remove the ITO film of part; form transparent masking layer 107, thus when etching photodiode passivation layer subsequently as the etching protective seam, avoid carving the destruction that causes photoelectric conversion layer 106 owing to crossing.
Steps A 7: as shown in figure 12, on the exposed surface of entire substrate, form passivation layer 108 (Diodepassivation layer), form open C at the passivation layer 108 that is arranged in described photovoltaic sensing element district F, to expose described photoelectric conversion layer.Described passivation layer is a p type silicon nitride.Concrete; deposit the second dielectric layer (not shown); utilize light shield B7 to expose and etching; remove second dielectric layer of part and form passivation layer 108; form open C in passivation layer 108, make the photosensitive area of photodiode expose, this passivation layer 108 is as the etching protective seam of photodiode; also as a layer insulating, prevent that the leakage current of photodiode is excessive simultaneously.Described passivation layer for example is a silicon nitride.
Steps A 8: as shown in figure 13, form common electrode layer (Common layer) 109, on described photoelectric conversion layer 106, form the top electrode conductive layer 109a of photovoltaic sensing element.This common electrode layer for example is made up of tin indium oxide (ITO) or indium zinc oxide (IZO).Preferably, common electrode layer 109 forms in same processing procedure with described top electrode conductive layer 109a, and is same material.Concrete, utilize light shield B8 to expose and etching, as public (common) electrode wires.
Steps A 9: as shown in figure 14, form photoresist layer (Light block layer) 110 on the common electrode layer 109 that is positioned at the on-off element district, this photoresist layer is corresponding with the position of described semiconductor island 104.The material of described photoresist layer is metal M o.Concrete, utilize light shield B9 to expose and etching, this photoresist layer connects the public electrode of adjacent two row pixel cells, be used to prevent the disconnection defect of public electrode, the main effect of the photoresist layer of field effect transistor top is to cause electron drift in order to stop the irradiate light field effect transistor, thereby reduces the influence to the output result.
Steps A 10: as shown in Figure 6, on the exposed surface of entire substrate, form protective seam 111.Described protective seam for example is a silicon nitride.Concrete, utilize light shield B10 to expose and etching, this protective seam 111 mainly plays components and parts on the protection substrate.
Above X ray sensor of Jie Shaoing and manufacture method thereof, adopt dual scanning line (dual gate) structure of two scanning line driving one-row pixels unit, control the odd column of this row and the on off state of even column field effect transistor respectively by these two sweep traces, thereby reach the purpose of each photodiode photosignal reading state of control.
In addition, based on same principle, the X ray sensor of other embodiments of the invention also can adopt three scan line (triple gate) structure of three scanning line driving one-row pixels unit, for example, each row pixel cell is divided into three groups, then the input end of first group of pixel cell all connects first sweep trace, the input end of second group of pixel cell all connects second sweep trace, the input end of the 3rd group of pixel cell all connects three scan line, and the output terminal of three adjacent row pixel cells links to each other with same data line.
Perhaps adopt the more structure of multi-strip scanning line, be n bar scanning line driving one-row pixels unit (n is the natural number more than or equal to 2), its composition and connected mode and embodiment one are similar, at this moment, the quantity of sweep trace is increased to n times of traditional structure, and the quantity of data line also can reduce to the 1/n of traditional structure, so, the quantity of data-driven IC module also is reduced to the 1/n of traditional structure, and since the cost of data-driven IC module with respect to turntable driving IC module than higher, though so the quantity of data-driven IC module increases n doubly, get on very well on the whole, the relative traditional structure X ray sensor of production cost still descends a lot.Therefore, the expansibility of technical scheme provided by the invention is stronger, can realize lower production cost by the quantity of pooled data line and increase sweep trace.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.Though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention.Any those of ordinary skill in the art, do not breaking away under the technical solution of the present invention scope situation, all can utilize the method and the technology contents of above-mentioned announcement that technical solution of the present invention is made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention, all still belongs in the scope of technical solution of the present invention protection any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (32)
1. an X ray sensor is characterized in that, comprising:
The sweep trace of cross arrangement and data line,
The pixel unit array that sweep trace and data line are separated out,
The data drive circuit that is connected with data line,
The scan drive circuit that is connected with sweep trace; Wherein,
In the described pixel unit array, the described pixel cell of every row links to each other with at least two sweep traces, and the shared described data line of at least two row pixel cells, described pixel cell comprises photovoltaic sensing element and on-off element.
2. X ray sensor according to claim 1 is characterized in that, described at least two row pixel cells are adjacent successively.
3. X ray sensor according to claim 2, it is characterized in that, the input end that is positioned at the described pixel cell of odd column in described every capable pixel cell all connects a described sweep trace, the input end that is positioned at the described pixel cell of even column in described every capable pixel cell all connects another described sweep trace, and the output terminal of described adjacent two row pixel cells links to each other with same data line.
4. X ray sensor according to claim 2, it is characterized in that, described each row pixel cell is divided into three groups, then the input end of first group of pixel cell all connects first sweep trace, the input end of second group of pixel cell all connects second sweep trace, the input end of the 3rd group of pixel cell all connects three scan line, and the output terminal of three adjacent row pixel cells links to each other with same data line.
5. according to each described X ray sensor of claim 1 to 4, it is characterized in that an end of described pixel cell connects public electrode, an other end is connected to described data line by described on-off element.
6. according to each described X ray sensor of claim 1 to 4, it is characterized in that described photovoltaic sensing element comprises photodiode, described photodiode output links to each other with described data line by described on-off element.
7. X ray sensor according to claim 5, it is characterized in that described on-off element comprises field effect transistor, the source electrode of described field effect transistor connects described photovoltaic sensing element output terminal, drain electrode connects described data line, and grid connects described sweep trace.
8. the driving method of an X ray sensor as claimed in claim 1 is characterized in that, comprising:
Described scan drive circuit is distinguished the input scan signals by interleaved mode at least two sweep traces that connect every capable pixel cell,
According to the on off state of described sweep signal control pixel cell,
Collection is in the photosignal of the pixel cell of opening state.
9. the manufacture method of an X ray sensor, described X sensor have the array that a plurality of pixel cells are formed, and described pixel cell comprises photovoltaic sensing element district and on-off element district, it is characterized in that, described manufacture method may further comprise the steps:
Form the grid layer on substrate, described grid layer comprises: at least two sweep traces that link to each other with each row pixel cell, and, the grid that is positioned at the on-off element district that is connected with described sweep trace;
Covering gate dielectric layer on described grid layer;
Form active layer on the gate dielectric layer in described on-off element district, the position of described active layer is corresponding with described grid;
Form source-drain layer, described source-drain layer comprises: source electrode on the described active layer and drain electrode, and, the data line that is connected with described source electrode; On the gate dielectric layer in described photovoltaic sensing element district, form the bottom electrode conductive layer of photovoltaic sensing element;
On described bottom electrode conductive layer, form photoelectric conversion layer;
On the surface that entire substrate exposes, cover passivation layer, form opening at the passivation layer that is arranged in described photovoltaic sensing element district, to expose described photoelectric conversion layer;
On described photoelectric conversion layer, form the top electrode conductive layer of photovoltaic sensing element.
10. the manufacture method of X ray sensor according to claim 9 is characterized in that, described grid layer also comprises soldering pad layer, and is further comprising the steps of behind the described formation gate dielectric layer:
Form via hole in the gate dielectric layer on described soldering pad layer, to expose described soldering pad layer.
11. the manufacture method of X ray sensor according to claim 9 is characterized in that, and is further comprising the steps of after the formation photoelectric conversion layer on described bottom electrode conductive layer:
On described photoelectric conversion layer, form transparent masking layer.
12. the manufacture method of X ray sensor according to claim 11 is characterized in that, the material of described transparent masking layer is a transparent conductive oxide.
13. the manufacture method of X ray sensor according to claim 12 is characterized in that, described transparent conductive oxide is tin indium oxide or indium zinc oxide.
14. the manufacture method of X ray sensor according to claim 9 is characterized in that, and is further comprising the steps of after the covering passivation layer on the surface that entire substrate exposes: form common electrode layer on described passivation layer.
15. the manufacture method of X ray sensor according to claim 14 is characterized in that, described common electrode layer and described top electrode conductive layer form in same processing procedure, and are same material.
16. the manufacture method of X ray sensor according to claim 14 is characterized in that, the material of described common electrode layer is a transparent conductive oxide.
17. the manufacture method of X ray sensor according to claim 16 is characterized in that, described transparent conductive oxide is tin indium oxide or indium zinc oxide.
18. the manufacture method of X ray sensor according to claim 14 is characterized in that, also comprises form common electrode layer on described passivation layer after: be positioned on the common electrode layer in on-off element district and form photoresist layer.
19. the manufacture method of X ray sensor according to claim 18 is characterized in that, the material of described photoresist layer is metal M o.
20. the manufacture method of X ray sensor according to claim 9 is characterized in that, and is further comprising the steps of after the top electrode conductive layer of formation photovoltaic sensing element on described photoelectric conversion layer: form protective seam on the exposed surface of entire substrate.
21. the manufacture method of X ray sensor according to claim 20 is characterized in that, described protective seam is a silicon nitride.
22. the manufacture method of X ray sensor according to claim 9 is characterized in that, described grid layer is one or more the combined alloy among Mo, Al or the Cr.
23. the manufacture method of X ray sensor according to claim 22 is characterized in that, described grid layer is the alloy of Mo, Al.
24. the manufacture method of X ray sensor according to claim 9 is characterized in that, described source-drain layer is one or more the combined alloy among Mo, Al or the Nd.
25. the manufacture method of X ray sensor according to claim 24 is characterized in that, described source-drain layer is the alloy of Mo, Al.
26. the manufacture method of X ray sensor according to claim 9 is characterized in that, described gate dielectric layer is a silicon nitride.
27. the manufacture method of X ray sensor according to claim 9 is characterized in that, described photoelectric conversion layer comprises amorphous silicon layer.
28. the manufacture method of X ray sensor according to claim 27 is characterized in that, described amorphous silicon layer is the stepped construction of n type amorphous silicon layer, intrinsic amorphous silicon layer and p type amorphous silicon layer.
29. the manufacture method of X ray sensor according to claim 9 is characterized in that, described active layer comprises amorphous silicon layer.
30. the manufacture method of X ray sensor according to claim 29 is characterized in that, described amorphous silicon layer is the rhythmo structure of intrinsic amorphous silicon layer and n type amorphous silicon layer.
31. the manufacture method of X ray sensor according to claim 9 is characterized in that, described passivation layer is a p type silicon nitride.
32. the manufacture method of X ray sensor according to claim 9 is characterized in that, described source-drain layer and described bottom electrode form in same processing procedure, and are same material.
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