CN101930077B - X-ray sensor and fabrication method thereof - Google Patents
X-ray sensor and fabrication method thereof Download PDFInfo
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- CN101930077B CN101930077B CN 200910054106 CN200910054106A CN101930077B CN 101930077 B CN101930077 B CN 101930077B CN 200910054106 CN200910054106 CN 200910054106 CN 200910054106 A CN200910054106 A CN 200910054106A CN 101930077 B CN101930077 B CN 101930077B
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Abstract
The invention relates to an X-ray sensor and a fabrication method thereof. The X-ray sensor comprises scanning lines, data lines and a pixel unit array, wherein the scanning lines and the data lines are arranged in a cross way, the pixel unit array is formed by the separation of the scanning lines and the data lines, each pixel unit comprises a switch element and a photoelectric sensing element connected with the switch element, at least two data lines are arranged between every two adjacent rows of pixel units, one scanning line is shared by at least two lines of pixel units, and in the at least two lines of pixel units, the switch elements of the pixel units in the same row are respectively connected with different data lines. The X-ray senor improves data acquisition rate and ensures that the quantity of the scanning lines is reduced by half, thereby correspondingly reducing the quantity of the driving circuits for driving the scanning lines.
Description
Technical field
The present invention relates to the digitized video technical field, particularly X ray sensor and manufacture method.
Background technology
Along with social development and continuous progress in science and technology, various digitized video medical skills emerge in an endless stream, and the digitized video technology has been played the part of very important role in medical field now.In most existing digitized video medical applications, for example X-ray Chest X-rays, the CT-computed tomography, it is exactly X ray (X-ray) sensor that digital image technology is played vital element.
Fig. 1 is a kind of structural representation of X-ray plane sensor.With reference to shown in Figure 1, each pixel cell of described X-ray plane sensor is made up of a photodiode 3 and field effect transistor (FET, Field Effect Transistor) 4.The controlling grid scan line 1 that each field effect transistor is adjacent links to each other, and each photodiode links to each other via the data line 2 that the field effect transistor in this pixel cell is adjacent.
Fig. 2 is the equivalent structure synoptic diagram of X-ray plane sensor shown in Figure 1.With reference to shown in Figure 2, the controlling grid scan line 12 that the grid of each field effect transistor 15 in each row pixel cell is adjacent links to each other, and the data line 13 that source electrode is adjacent links to each other, and drain electrode links to each other with the negative pole of photodiode 15.And the positive pole of photodiode 15 links to each other with lead end Vcom.Each bar controlling grid scan line links to each other with grid control module 11b, and each bar data line links to each other with source electrode control module 11a.
When above-mentioned X ray sensor is worked, apply the on off state that the driven sweep signal comes the controlling filed effect transistor by controlling grid scan line.Because on the field effect transistor 15 in the one-row pixels unit that 12 connections of each bar controlling grid scan line are adjacent, so the type of drive of X ray sensor also is to adopt the single file scan mode.Field effect transistor 15 in i.e. 12 drivings of controlling grid scan line one-row pixels unit corresponding with it, simultaneously since the photodiode 14 in the pixel cell be connected with this controlling grid scan line by field effect transistor 15, thereby can control the on off state of coupled photodiode 14 by the on off state of controlling each field effect transistor.
When light shone photodiode 14, photodiode 14 can be owing to illumination produces electron drift, because the lead-in wire that is connected with photodiode 14 is in open-circuit condition, so can form an electric potential difference at the two ends of photodiode 14.When a controlling grid scan line 12 is applied driven sweep signal (driving voltage), the field effect transistor 15 that links to each other with this sweep trace 12 is opened, the photo-signal that the photodiode 14 that links to each other with this field effect transistor 15 produces just can be read from the data line 13 that is connected by data acquisition circuit, and and then finish the acquisition function of photosignal by control controlling grid scan line 12 and the sequential of data line 13, finish the purpose that photo-signal that photodiode is produced is gathered thereby reach by the on off state of control field effect transistor.
Because described X-ray plane sensor is the working method of single file scanning, it can only drive delegation's photodiode down in working order at every turn, that is to say that the photocurrent that can only have delegation's photodiode to produce at synchronization can be read out.Adopt the data acquisition rate of this kind structure X ray sensor can satisfy the requirement of current static number image Medical Devices substantially, but be difficult to satisfy the requirement of the high data acquisition rate of dynamic digital image Medical Devices.
Therefore, based on the X ray sensor of existing single file scan mode, can only be that the simple driving method from improving now improves data acquisition rate, for example increase the gated sweep line scanning frequency.But owing to be subjected to the restriction of factors such as the physical arrangement of amorphous silicon device own, when the sweep frequency of controlling grid scan line was higher than the intrinsic response frequency of device itself, the sweep frequency of controlling grid scan line just can not continue increase again.
And because there is memory effect in amorphous silicon device self, also there are some shortcomings at signal in this amorphous silicon flat panel X ray sensor aspect reading, thereby brings certain difficulty to digital imagery.The memory effect of field effect transistor for example, in the moment that field effect transistor is closed, electric charge is remained in the field effect transistor by temporary, and As time goes on, the electric charge that is detained just can be discharged gradually.If during this time coming on the photoelectric signal collection, the electric current that is released from field effect transistor so can produce certain interference effect to the signal that is being read, just can be read the photosignal that the next line photodiode produces after dischargeing fully so must wait until this current signal, the time interval of this wait approximately need take total signal and read 1/3 of the time.If can reduce or eliminate this stand-by period, just can shorten the trace interval of adjacent two controlling grid scan lines, thereby improve data acquisition rate.
US Patent No. 7005663B2 proposes a kind of method, in the interval time of twice data acquisition section, eliminates the electric charge that is trapped in the field effect transistor by a reset pulse.But this kind discharges delay electric charge in the field effect transistor by reset pulse, shorten the methods such as the time interval of adjacent twice driving signal, though can improve the acquisition rate of data, but but increased the complexity of peripheral drive circuit, and the amplitude that data acquisition rate improves is relatively very little.
Summary of the invention
The purpose of this invention is to provide a kind of X ray sensor and manufacture method, to solve the lower problem of prior art X ray sensor data acquisition rate.
For addressing the above problem, X ray sensor provided by the invention comprises:
The sweep trace of cross arrangement and data line;
The pixel unit array that is separated out by sweep trace and data line,
Wherein, described pixel cell comprises on-off element and the photovoltaic sensing element that is attached thereto, have at least two data lines between adjacent two row pixel cells, at least two row pixel cells share a sweep trace, and the on-off element that is arranged in the pixel cell of same row at least in the described two row pixel cells connects different data lines respectively.
Correspondingly, the manufacture method of X ray sensor provided by the invention, described X sensor has the array of being made up of a plurality of pixel cells, and described pixel cell comprises photovoltaic sensing element and on-off element, and described manufacture method comprises:
In substrate definition on-off element district and photovoltaic sensing element district, form grid layer at substrate, and the described grid layer formation of etching sweep trace, described sweep trace is at least two row pixel cells and shares, and, form the on-off element grid that is positioned at the on-off element district;
Form gate dielectric layer at described grid layer;
Gate dielectric layer in described on-off element district forms active layer;
Form source-drain layer at described active layer, and the described source-drain layer of etching forms the source-drain electrode of on-off element, and, form at least two data lines, described two data line bits are between adjacent two row pixel cells, and the source-drain electrode that at least two row of shared sweep trace are arranged in the pixel cell of same row in the pixel cells connects different data lines respectively; Form the lower electrode layer of photovoltaic sensing element at the gate dielectric layer in described photovoltaic sensing element district;
Form photoelectric conversion layer at described lower electrode layer;
The surface that exposes in entire substrate forms passivation layer, forms opening at the passivation layer that is arranged in described photovoltaic sensing element district, to expose described photoelectric conversion layer;
Form the upper electrode layer of photovoltaic sensing element at described photoelectric conversion layer.
Compared with prior art, the described X ray sensor that manufacture method by described X ray sensor forms, share a sweep trace by at least two row pixel cells, make described X ray sensor can once drive the field effect transistor of at least two row pixel cells, thereby described X ray sensor is the fine scanning mode, has improved the data acquisition rate of X ray sensor.
And because the field effect transistor of at least two row pixel cells is connected in a sweep trace jointly, make the quantity of sweep trace reduce by half at least, the corresponding quantity that has also reduced the driving circuit of driven sweep line.
Description of drawings
Fig. 1 is the structural representation of a kind of X-ray plane sensor of the prior art;
Fig. 2 is the equivalent structure synoptic diagram of X-ray plane sensor shown in Figure 1;
Fig. 3 is the structural representation of a kind of embodiment of X ray sensor of the present invention;
Fig. 4 is the equivalent structure synoptic diagram of X ray sensor shown in Figure 3;
Fig. 5 is a kind of device architecture synoptic diagram of corresponding X ray sensor shown in Figure 3;
Fig. 6 is that X ray sensor shown in Figure 5 is along the diagrammatic cross-section of A-A ' direction;
Fig. 7 a to Fig. 7 g is the manufacture process synoptic diagram of X ray sensor shown in Figure 3.
Embodiment
Adopt the single file scan mode at the prior art X ray sensor, and make the problem that data acquisition rate is lower, the invention provides a kind of X ray sensor, field effect transistor by adjacent at least two row pixel cells shares a sweep trace, realize the working method of fine scanning, improve the data acquisition rate of X ray sensor.
With reference to shown in Figure 3, a kind of embodiment of X ray sensor of the present invention comprises: pixel unit array, wherein each pixel cell is made up of a photodiode 9 and field effect transistor 10.And have two data lines 7,8 between adjacent two row pixel cells, have a sweep trace 6 between adjacent two row pixel cells.The field effect transistor of described adjacent two row in the pixel cells shares this sweep trace, and the field effect transistor in each row pixel cell connects different adjacent data lines respectively with field effect transistor in its row adjacent unit pixel.For example the field effect transistor in the one-row pixels unit connects data line 7, and then the field effect transistor in the one-row pixels unit adjacent with this row pixel cell just is connected data line 8.And the photodiode in each pixel cell links to each other with data line via the field effect transistor in this pixel cell.
Fig. 4 is the equivalent structure synoptic diagram of X-ray plane sensor shown in Figure 3.With reference to shown in Figure 4, have sweep trace 16 between adjacent two row pixel cells, have two data lines 17,18 between adjacent two row pixel cells.The grid of the field effect transistor 20 in the adjacent two row pixel cells all links to each other with this two sweep trace 16 of going between pixel cell.The source electrode of field effect transistor 20 that this two row is arranged in the pixel cell of same row in pixel cell then links to each other with different data line respectively, and drain electrode links to each other with the negative pole of photodiode 19.And the positive pole of photodiode 19 links to each other with lead end Vcom.Each bar sweep trace links to each other with grid control module 21b, and each bar data line links to each other with source electrode control module 21a.
For example, the one-row pixels unit of supposing the most close source electrode control module 21a is that pixel cell is capable 1, and the one-row pixels unit adjacent with this row pixel cell is pixel cell capable 2.And supposition be right away from the direction of grid control module 21b, is left towards the direction of grid control module 21b.Then the grid of the field effect transistor in pixel cell capable 1 and the pixel cell capable 2 all links to each other with sweep trace 16.The data line that the source electrode of the field effect transistor of pixel cell 22 is adjacent with its right side in the pixel cell capable 1 links to each other, and the data line that the source electrode of the field effect transistor of pixel cell 23 is adjacent with its left side in the pixel cell capable 2 links to each other.The connected mode of the field effect transistor in the pixel cell capable 1 and 2 in other each pixel cells is also identical therewith.
Can see that in conjunction with Fig. 3 and Fig. 4 among the embodiment of above-mentioned X ray sensor, the field effect transistor in the adjacent two row pixel cells all is connected on this two sweep trace of going between pixel cell, makes two row pixel cells share a sweep trace.With respect to the prior art X ray sensor, the quantity of the sweep trace of above-mentioned X ray sensor embodiment has just reduced half, and correspondingly, the quantity of the driving circuit of driven sweep line also reduces to original half accordingly among the grid control module 21b.Meanwhile, between adjacent two row pixel cells two data lines 17,18 are arranged.
When described X ray sensor was worked, after a sweep trace being applied the driving signal, two coupled row field effect transistors were opened simultaneously.So just can pass through a scanning line driving two row field effect transistors, thus the on off state of the two row photodiodes that control links to each other with field effect transistor.
When the field effect transistor of this sweep trace correspondence is opened, can read corresponding photo-signal from the photodiode that is connected with this two row field effect transistor by two data lines.Under the condition that adopts the driving frequency identical with the prior art X ray sensor, because the type of drive of above-mentioned X ray sensor once can drive two row field effect transistors, so the X ray sensor of the single file of the relative prior art of data acquisition rate scanning will double, so its data acquisition rate can satisfy the demand of dynamic imaging equipment in the medical field substantially.
Based on the embodiment explanation of above-mentioned X ray sensor, also can adopt more adjacent lines pixel cells to share a sweep trace, have the more mode of multidata line between adjacent two row pixel cells.For example, adjacent 3 row pixel cells share a sweep trace, have 3 data lines between adjacent two row pixel cells.After a sweep trace being applied the driving signal, 3 coupled row field effect transistors are opened simultaneously.So just can be by a scanning line driving 3 row field effect transistors.When field effect transistor is opened, can read corresponding photo-signal from the photodiode that is connected with this 3 row field effect transistor by 3 data lines.The X ray sensor of the single file scanning of the relative prior art of its data acquisition efficiency will improve 2 times.
By that analogy, also can have non-conterminous each row pixel cell to share a sweep trace, the field effect transistor that is positioned at same row in each row pixel cell of shared sweep trace then connects different data lines.
But for what the various implementations of above X ray sensor also need be considered be, owing to increased the quantity of data line, the aperture opening ratio of whole sensor can descend to some extent, and the quantity of the driving circuit of driving data lines will increase simultaneously, and production cost also can increase.Thereby, need take all factors into consideration data acquisition efficiency, aperture opening ratio and production cost, to select suitable fine scanning mode.
Fig. 5 is a kind of device architecture synoptic diagram of corresponding Double Data line X ray sensor shown in Figure 3.Fig. 6 is that the device architecture of X ray sensor shown in Figure 5 is along the diagrammatic cross-section of A-A ' direction.In conjunction with Fig. 5 and shown in Figure 6, the device architecture of described X ray sensor comprises from bottom to up successively: grid layer 30, gate dielectric layer 310, active layer 31 (being made of intrinsic amorphous silicon layer 311 and n type amorphous silicon layer 312), source-drain layer 32, photoelectric conversion layer 33, etch protection layer 34, passivation layer 35, common electrode layer 36, light blocking layer 37 and protective seam 38.
Below further illustrate for the concrete manufacture process of the X ray sensor of Double Data line structure shown in Figure 6.
Shown in Fig. 7 a, in substrate definition on-off element district and photovoltaic sensing element district, as the position that forms on-off element and photovoltaic sensing element in the pixel unit array, described on-off element is field effect transistor respectively, and described photovoltaic sensing element is photodiode.
At first, at entire substrate deposition grid layer 30, and the described grid layer 30 of etching, the grid of formation sweep trace and field effect transistor.Wherein, it is shared that formed sweep trace is at least two row pixel cells.The material that grid layer 30 adopts can for example can be the alloy of molybdenum, aluminium for one or more the combined alloy in chromium (Cr), molybdenum (Mo) or the aluminium (Al).
Then, shown in Fig. 7 b, at grid layer 30 deposition gate dielectric layers 310, deposition intrinsic amorphous silicon layer 311 on gate dielectric layer 310 is at intrinsic amorphous silicon layer 311 deposition n type amorphous silicon layers 312.Described intrinsic amorphous silicon layer 311 and n type amorphous silicon layer 312 are as active layer.Then, the described n type of etching amorphous silicon layer 312 and intrinsic amorphous silicon layer 311 form conducting channel.310 layers of gate dielectric layers are also as the insulation course between the source-drain electrode of grid and follow-up formation herein.The material that gate dielectric layer 310 adopts can be silicon nitride.
Described gate dielectric layer 310 also comprises the soldering pad layer (not shown), forms the via hole (not shown) in the gate dielectric layer 310 on described soldering pad layer, thereby can allow source-drain layer 32 and grid layer 30 in the conducting of soldering pad layer place to expose described soldering pad layer.
Then, shown in Fig. 7 c, sedimentary origin drop ply 32 on established structure, and the described source-drain layer 32 of etching form data line and source-drain electrode.Wherein, because the X ray sensor of present embodiment is the Double Data line structure, thereby this step manufacturing process is with respect to above-mentioned prior art of giving an example, more than form 1 data line, for example multiform becomes 1 data line 322.Described two data line bits are between adjacent two row pixel cells, and the source-drain electrode that at least two row of shared sweep trace are arranged in the pixel cell of same row in the pixel cells connects different data lines respectively.The material that source-drain layer 32 adopts can be one or more the combined alloy in aluminium, neodymium (Nd) or the molybdenum, for example alloy of molybdenum, aluminium.And, form the lower electrode layer (not shown) of photovoltaic sensing elements at the gate dielectric layer 310 in described photovoltaic sensing element district.
Then, shown in Fig. 7 d, at described lower electrode layer deposition photoelectric conversion layer 33, described photoelectric conversion layer 33 comprises amorphous silicon layer, and it is made up of n type amorphous silicon/intrinsic amorphous silicon/p-type amorphous silicon three layer laminate structures.And the described photoelectric conversion layer 33 of etching forms respective graphical.
Then, continue with reference to shown in Fig. 7 d deposition etch protective seam 34 on photoelectric conversion layer 33, and the described etch protection layer 34 of etching.Described etch protection layer 34 is used for when follow-up passivation layer 35 etchings as layer protective layer, so that be unlikely to cause photoelectric conversion layer 33 structural damages owing to spend quarter when passivation layer 35 etchings.The material that described etch protection layer 34 adopts can be transparent conductive oxide, for example indium zinc oxide (IZO) or tin indium oxide (ITO).
Then, shown in Fig. 7 e, deposit passivation layer 35 on the surface that entire substrate exposes, described passivation layer 35 surrounds described etch protection layer 34 and photoelectric conversion layer 33.And the described passivation layer 35 of etching.Described passivation layer 35 prevents that as a layer insulating leakage current of photodiode is excessive.The material that described passivation layer 35 adopts can be silicon nitride, for example p-type silicon nitride.
Then, shown in Fig. 7 f, in the surface deposition common electrode layer 36 that entire substrate exposes, and the described common electrode layer 36 of etching, form public electrode.Form the upper electrode layer (not shown) of photovoltaic sensing element at described photoelectric conversion layer 33.The material that described common electrode layer 36 adopts can be transparent conductive oxide, for example indium zinc oxide (IZO) or tin indium oxide (ITO).Common electrode layer 36 can form in same processing procedure with described upper electrode layer, and is same material.
Then, shown in Fig. 7 g, at the common electrode layer 36 deposition light blocking layers 37 that are positioned at the on-off element district, and the described light blocking layer 37 of etching forms respective graphical.Light blocking layer 37 prevents the broken string of common electrode layer 36 by connecting the public electrode of adjacent two row pixels.The light blocking layer 37 main effects of field effect transistor top are to cause electron drift in order to stop light exposure field effect transistor simultaneously, thereby reduce the influence to the output result.The material that light blocking layer 37 adopts can be molybdenum.
At last, continue with reference to shown in Fig. 6 b, at the surface deposition protective seam 38 that entire substrate exposes, and the described protective seam 38 of etching forms respective graphical.Protective seam 38 mainly plays components and parts on the protection substrate.The material that protective seam 38 adopts can be silicon nitride.
In sum, the embodiment of above-mentioned X ray sensor shares sweep trace by adjacent multirow pixel cell and uses the mode of many data lines, under the situation of the complexity that does not increase peripheral drive circuit, just can improve data acquisition rate, and on the basis of improving data acquisition rate, not reduce the aperture opening ratio of sensor.
And, owing to share sweep trace, and make the quantity of sweep trace reduce, the quantity of the driving circuit of respective drive sweep trace also reduces.
Though the present invention discloses as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can do various changes and modification, so protection scope of the present invention should be as the criterion with claim institute restricted portion.
Claims (30)
1. X ray sensor comprises:
The sweep trace of cross arrangement and data line;
The pixel unit array that is separated out by sweep trace and data line,
Wherein, described pixel cell comprises on-off element and the photovoltaic sensing element that is attached thereto, it is characterized in that,
Have at least two data lines between adjacent two row pixel cells, the whole pixel cells of at least two row in the pixel cells share a sweep trace, and the on-off element that is arranged in the pixel cell of same row at least in the described two row pixel cells connects different data lines respectively;
Connect different data lines respectively with each pixel cell in the delegation;
Each data line connects with the one source pole control module, and each sweep trace connects same grid control module.
2. X ray sensor as claimed in claim 1 is characterized in that, has two data lines between adjacent two row pixel cells, and the on-off element in the two row pixel cells of shared sweep trace is connected in the sweep traces between described two row pixel cells jointly.
3. X ray sensor as claimed in claim 2 is characterized in that, described two row pixel cells are two adjacent row pixel cells.
4. X ray sensor as claimed in claim 1 is characterized in that, has 3 data lines between adjacent two row pixel cells, and the on-off element in the 3 row pixel cells of shared sweep trace is connected in the sweep traces between described 3 row pixel cells jointly.
5. X ray sensor as claimed in claim 4 is characterized in that, described 3 row pixel cells are 3 adjacent row pixel cells.
6. X ray sensor as claimed in claim 1 is characterized in that, described photovoltaic sensing element comprises photodiode, and the negative pole of described photodiode links to each other with described data line by described on-off element.
7. X ray sensor as claimed in claim 1 is characterized in that, described on-off element comprises field effect transistor, and the drain electrode of described field effect transistor connects described photovoltaic sensing element output terminal, and source electrode connects described data line, and grid connects described sweep trace.
8. the manufacture method of an X ray sensor, described X sensor has the array of being made up of a plurality of pixel cells, and described pixel cell comprises photovoltaic sensing element and on-off element, it is characterized in that, and the manufacture method of described X ray sensor comprises:
In substrate definition on-off element district and photovoltaic sensing element district, form grid layer at substrate, and the described grid layer formation of etching sweep trace, whole pixel cells that described sweep trace is at least in the two row pixel cells share, and, form the on-off element grid that is positioned at the on-off element district;
Form gate dielectric layer at described grid layer;
Gate dielectric layer in described on-off element district forms active layer;
Form source-drain layer at described active layer, and the described source-drain layer of etching forms the source-drain electrode of on-off element, and, form at least two data lines, described two data line bits are between adjacent two row pixel cells, and the source-drain electrode that at least two row of shared sweep trace are arranged in the pixel cell of same row in the pixel cells connects different data lines respectively; Form the lower electrode layer of photovoltaic sensing element at the gate dielectric layer in described photovoltaic sensing element district;
Form photoelectric conversion layer at described lower electrode layer;
The surface that exposes in entire substrate forms passivation layer, forms opening at the passivation layer that is arranged in described photovoltaic sensing element district, to expose described photoelectric conversion layer;
Form the upper electrode layer of photovoltaic sensing element at described photoelectric conversion layer.
9. the manufacture method of X ray sensor as claimed in claim 8, it is characterized in that, also be formed with soldering pad layer in the described grid layer, after described grid layer forms gate dielectric layer, form via hole in the gate dielectric layer on described soldering pad layer, expose described soldering pad layer.
10. the manufacture method of X ray sensor as claimed in claim 8 is characterized in that, after described lower electrode layer forms photoelectric conversion layer, forms etch protection layer at described photoelectric conversion layer.
11. the manufacture method of X ray sensor as claimed in claim 10 is characterized in that, the material of described etch protection layer is transparent conductive oxide.
12. the manufacture method of X ray sensor as claimed in claim 11 is characterized in that, described transparent conductive oxide is tin indium oxide or indium zinc oxide.
13. the manufacture method of X ray sensor as claimed in claim 8 is characterized in that, after the surface that entire substrate exposes forms passivation layer, forms common electrode layer at described passivation layer.
14. the manufacture method of X ray sensor as claimed in claim 13 is characterized in that, described common electrode layer and described upper electrode layer form in same processing procedure, and are same material.
15. the manufacture method of X ray sensor as claimed in claim 13 is characterized in that, the material of described common electrode layer is transparent conductive oxide.
16. the manufacture method of X ray sensor as claimed in claim 15 is characterized in that, described transparent conductive oxide is tin indium oxide or indium zinc oxide.
17. the manufacture method of X ray sensor as claimed in claim 13 is characterized in that, after forming common electrode layer, forms light blocking layer in the common electrode layer that is positioned at the on-off element district.
18. the manufacture method of X ray sensor as claimed in claim 17 is characterized in that, the material of described light blocking layer is molybdenum.
19. the manufacture method of X ray sensor as claimed in claim 14 is characterized in that, after forming the upper electrode layer of photovoltaic sensing element, forms protective seam at the exposed surface of entire substrate.
20. the manufacture method of X ray sensor as claimed in claim 19 is characterized in that, the material of described protective seam is silicon nitride.
21. the manufacture method of X ray sensor as claimed in claim 8 is characterized in that, the material of described grid layer is one or more the combined alloy in chromium, molybdenum or the aluminium.
22. the manufacture method of X ray sensor as claimed in claim 21 is characterized in that, described grid layer is the alloy of molybdenum, aluminium.
23. the manufacture method of X ray sensor as claimed in claim 8 is characterized in that, described source-drain layer is one or more the combined alloy in molybdenum, aluminium or the neodymium.
24. the manufacture method of X ray sensor as claimed in claim 23 is characterized in that, described source-drain layer is the alloy of molybdenum, aluminium.
25. the manufacture method of X ray sensor as claimed in claim 8 is characterized in that, the material of described gate dielectric layer is silicon nitride.
26. the manufacture method of X ray sensor as claimed in claim 8 is characterized in that, described photoelectric conversion layer comprises amorphous silicon layer.
27. the manufacture method of X ray sensor as claimed in claim 26 is characterized in that, described amorphous silicon layer is the stepped construction of n type amorphous silicon layer, intrinsic amorphous silicon layer and p-type amorphous silicon layer.
28. the manufacture method of X ray sensor as claimed in claim 8 is characterized in that, described active layer comprises amorphous silicon layer.
29. the manufacture method of X ray sensor as claimed in claim 28 is characterized in that, described amorphous silicon layer is the rhythmo structure of intrinsic amorphous silicon layer and n type amorphous silicon layer.
30. the manufacture method of X ray sensor as claimed in claim 8 is characterized in that, the material of described passivation layer is silicon nitride.
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| CN103325814B (en) * | 2013-05-28 | 2015-08-26 | 中国科学院上海高等研究院 | A kind of OLED pixel and apply the display floater of this OLED pixel |
| CN105182396B (en) | 2015-06-29 | 2018-04-24 | 苏州瑞派宁科技有限公司 | A kind of channel multiplexing method that detector signal is read |
| CN107490886A (en) * | 2017-08-28 | 2017-12-19 | 上海中航光电子有限公司 | A kind of array base palte, touch-control display panel and touch control display apparatus |
| CN107610640A (en) * | 2017-09-28 | 2018-01-19 | 京东方科技集团股份有限公司 | A kind of array base palte and driving method, display panel and display device |
| CN107945757A (en) * | 2017-12-21 | 2018-04-20 | 惠科股份有限公司 | Liquid crystal display and its drive circuit, driving method |
| CN110660816B (en) * | 2018-06-29 | 2022-06-10 | 京东方科技集团股份有限公司 | Flat panel detector |
| CN110763332A (en) * | 2018-07-25 | 2020-02-07 | 群创光电股份有限公司 | Light ray detection device |
| CN111968584A (en) * | 2020-08-06 | 2020-11-20 | 武汉华星光电技术有限公司 | Display panel and display device |
| CN115704784A (en) * | 2021-08-05 | 2023-02-17 | 北京京东方传感技术有限公司 | Flat panel detector and detection device |
| CN114486954A (en) * | 2022-04-13 | 2022-05-13 | 江苏康众数字医疗科技股份有限公司 | Flat-panel optical sensor, flat-panel detector and imaging system |
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