CN101887913A - IGBT with improved collector structure - Google Patents
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Abstract
The invention relates to an insulated gate bipolar translator (IGBT) with an improved collector structure. The IGBT comprises a semiconductor substrate, wherein the second main surface of the semiconductor substrate is provided with a second conductive type collecting region and a metalized collector; a second conductive type base region is arranged in the semiconductor substrate; the upper part of the second conductive type base region is provided with a first conductive type emitting region; the first main surface of the semiconductor is provided with an insulated gate, an insulated dielectric layer and a metalized emitter; the second conductive type collecting region comprises one or more first regions with a first doping density and one or more second regions with a second doping density; the first regions surround the plurality of the second regions or the first regions and the second regions are arranged alternately and adjacently; the first doping density of the first regions is less than the second doping density of the second regions; and the first doping density of the first regions is greater than the doping density of the first conductive type conductive substrate. The IGBT has the characteristics of low on-state voltage, lower turn-off loss and higher impact resistance performance.
Description
Technical field
The present invention relates to a kind of power semiconductor, especially a kind of IGBT with improved-type collector structure.
Background technology
Insulated gate bipolar transistor IGBT (Insulated Gate Bipolar Transistor) was suggested and promotes rapidly the 1980s, now be widely used in the big current domain of mesohigh, and same MOSFET (metal-oxide semiconductor fieldeffect transistor) has pushed power electronic technology to the high frequency epoch, contrast the power semiconductor of other kind, as bipolar transistor, MOSFET; Described insulated gate bipolar transistor can be handled higher power with lower power loss, and can work in the middle of the circuit of high frequency, is the most outstanding characteristics and advantage of IGBT.At present, included by the IGBT kind of widespread production and use: punch IGBT (PT-IGBT), non-punch through IGBT (NPT-IGBT), a cut-off type IGBT (FS-IGBT), the IGBT of mentioned kind can reduce power loss, can improve the original intention of operating frequency and target again and be designed and develop.The power loss of IGBT mainly comprises on-state loss and switching loss.The voltage drop of device during conducting state (abbreviation on-state voltage drop) is low more, and on-state loss is low more; The devices switch time, hangover electric current short more, when turn-offing was more little, and switching loss is low more.
Except power loss, the impact resistance of IGBT also is another key property of estimating device performance.With the non-punch through IGBT is example, and the structural representation of its single cellular and equivalent circuit diagram are respectively as depicted in figs. 1 and 2.When non-punch through IGBT is turn-offed, reverse recovery current voltage waveform view such as the Fig. 3 of the diode in Fig. 2 equivalent electric circuit, wherein, I
RMBe maximum reverse restoring current, V
RMBe maximum reverse recovery voltage, Q
RBe QRR, t
mBe reverse recovery time, and we with softening factor S reverse recovery current are described usually: S=(t
2-t
1/ (t
1-t
0), t
0, t
1With t
2Represent the time corresponding point respectively.The softening factor S characterizing method of this utilization is widely adopted always, usually require softening factor S to be the bigger the better, because it is more little, it can produce higher electromotive force in circuit inductance, this electromotive force is superimposed on the supply voltage, be added in diode together and reach on the switch element in parallel with it, we are referred to as overshoot voltage.This electromotive force has not only improved the voltage request and the cost of diode and switch element, and is that one of device is threatened greatly.
Present known non-punch through IGBT commonly used, its collector structure comprises the P+ collector region, as accompanying drawing among the Chinese patent CN 101452951 " non-break-through (NPT) insulated gate bipolar transistor IGBT and manufacture method thereof ".The collector structure of non-punch through IGBT also comprises the collector electrode short-circuit structure at present, described collector electrode short-circuit structure is formed alternately by short circuit N+ district and P type collector region, and metallization collector electrode and the N-drift region above the P type collector region below the N+ district connection P type collector region; As accompanying drawing 4 among the Chinese patent CN 101478001A " a kind of collecting electrode IGBT " with hole injection structure.Above-mentioned two kinds of collector structures have a common characteristic: the P type collector region doping content that promptly constitutes collector region immobilizes, and doping content is denseer.P type collector region doping content is dense more, and IGBT is under the forward conduction state, and described P type collector region will be high more as the injection efficiency of the emitter region of PNP bipolar transistor, and hole current will be big more, thereby on-state voltage drop will be low more; Yet, because the raising of injection efficiency, cause device QRR, reverse recovery time and hangover electric current all will increase, increased the power loss when device turn-offs, and, because the concentration gradient between P type collector region and N-type drift region is very big, it is very limited that the minority carrier quantum count of P type collector region is advanced in feasible injection, and these minority carriers are scanned out rapidly in reversely restoring process or be compound, have increased the hardness of reverse recovery, be that the S value is less, reduced the resistance to impact of device.On the contrary, if reduce the impurity concentration of P type collector region, the on-state voltage drop of device can increase again so, causes the on-state consume to increase, and is unfavorable for device performance equally.
Summary of the invention
The objective of the invention is to overcome the deficiencies in the prior art, a kind of IGBT with improved-type collector structure is provided, its on-state voltage drop is low, has lower turn-off power loss and higher impact resistance.
According to technical scheme provided by the invention, described IGBT with improved-type collector structure, on the cross section of described semiconductor IGBT device, comprise the semiconductor substrate of first conduction type with two relative interareas, semiconductor substrate comprises first interarea and second interarea; The second conduction type collector region is set on second interarea of described semiconductor substrate, is deposited with the metallization collector electrode on the described second conduction type collector region; Be provided with the second conduction type base in the described semiconductor substrate, the described second conduction type base is close to first interarea, and contacts with first interarea; The top of the described second conduction type base is provided with the first conduction type emitter region; Also be provided with insulated gate, insulating medium layer and metallization emitter on first interarea of described semiconductor substrate; Described insulated gate contacts with the first conduction type emitter region, and described insulated gate utilizes insulating medium layer isolated with the metallization emitter; Described metallization emitter is deposited on first interarea, and electrically contacts with the first conduction type emitter region, the second conduction type base; Its innovation is:
On the cross section of described semiconductor IGBT device, the described second conduction type collector region comprises one or more first area and one or more second areas with second doping content with first doping content, and described first area surrounds a plurality of second areas or first area and second area alternately in abutting connection with being provided with; First doping content of described first area is less than second doping content of second area, and first doping content of described first area is greater than the doping content of the first conductive type semiconductor substrate.
On the cross section of described semiconductor IGBT device, described insulated gate comprises insulating oxide and the conductive polycrystalline silicon that is positioned on the insulating oxide; Described insulating oxide is positioned on first interarea, on described insulating oxide and the semiconductor substrate in the adjacent second conduction type base and the described adjacent second conduction type base the first corresponding conduction type emitter region be in contact; The described second adjacent conduction type base utilizes first conductive type layer of semiconductor substrate isolated.
On the cross section of described semiconductor IGBT device, described insulated gate comprises groove; Described groove is positioned at the second conduction type base, and extends in the first conductive type semiconductor substrate of below, the second conduction type base; The second conduction type base is positioned at the top of semiconductor substrate, and the growth of described trench wall has insulating oxide, and is deposited with conductive polycrystalline silicon in described growth has the groove of insulating oxide; The notch of described groove is covered by insulating medium layer, and described groove is equipped with the first conduction type emitter region corresponding to the top of sidewall, and the described first conduction type emitter region contacts with groove.
On the cross section of described semiconductor IGBT device, the first area in the described second conduction type collector region is distributing along the direction that flows perpendicular to electric current, and that the shape of described first area comprises is square, bar shaped or circle.On the cross section of described semiconductor IGBT device, the second area in the described second conduction type collector region is distributing along the direction that flows perpendicular to electric current, and that the shape of described second area comprises is square, bar shaped or circle.On the cross section of described semiconductor IGBT device, the area of corresponding first area and the area ratio of second area are 0.01～1 in the described second conduction type collector region.
On the cross section of described semiconductor IGBT device, be provided with the first conduction type collector electrode shorting region in the described second conduction type collector region, the described first conduction type collector electrode shorting region contacts with the first conductive type semiconductor substrate, metallization collector electrode; Described metallization collector electrode and the first conduction type collector electrode shorting region, first area and the equal ohmic contact of second area.Described insulating medium layer is silex glass (USG), boron-phosphorosilicate glass (BPSG) or phosphorosilicate glass (PSG).The material of described semiconductor substrate comprises silicon.
Described " first conduction type " and " second conduction type " are among both, and for N type insulated gate bipolar transistor IGBT, first conduction type refers to the N type, and second conduction type is the P type; For P type insulated gate bipolar transistor IGBT, first conduction type is just in time opposite with N type insulated gate bipolar transistor IGBT with the type of the second conduction type indication.
Advantage of the present invention: by first area and the second area with different levels of doping is set in the second conduction type collector region, contrast traditional non-punch through IGBT, improved the reverse recovery " hardness " of device in turn off process, reduced the overshoot voltage that device oppositely recovers, improved the resistance to impact of device, obtained better on-state voltage drop, made to have balance preferably between turn-off power loss and the impact resistance.
Description of drawings
Fig. 1 is the structural representation of existing insulated gate bipolar transistor IGBT.
Fig. 2 is the schematic equivalent circuit of Fig. 1.
Fig. 3 is a current-voltage waveform schematic diagram in the diode reverse recovery process corresponding among Fig. 2.
Fig. 4 is the structural representation of the embodiment of the invention 1.
Fig. 5 is the structural representation of the embodiment of the invention 2.
Fig. 6 is the structural representation of the embodiment of the invention 3.
Embodiment
The invention will be further described below in conjunction with concrete drawings and Examples.
As Fig. 4～shown in Figure 6: IGBT is an example with N type non-through insulated-gate bipolar transistor npn npn, the present invention includes P base 1, N type emitter region 2, insulating oxide 3, conductive polycrystalline silicon 4, P+ base 5, metallization emitter 6, N type drift region 7, P type collector region 8, metallization collector electrode 9, insulating medium layer 10, first area 11, groove 12, N+ collector electrode shorting region 13, second area 14, first interarea 15 and second interarea 16.
As shown in Figure 4: on described insulated gate bipolar transistor IGBT cross section, the N type semiconductor substrate comprises N type drift region 7, and described N type drift region 7 has two relative interareas, and described two relative interareas comprise first interarea 15 and second interarea 16.Be formed with P type collector region 8 on second interarea 16 of described N type drift region 7, comprise one or more first areas 11 and one or more second area 14 in the described P type collector region 8, described first area 11 is the P conduction type with second area 14; Described first area 11 surrounds a plurality of second areas 14 or second area 14 and alternately adjacency setting of first area 11.Adopt second area 14 and alternately adjacency setting of first area 11 in the present embodiment.Described first area 11 has first doping content, and second area 14 has second doping content, and first doping content of described first area 11 is less than second doping content of second area 14; And first doping content of first area 11 is greater than the doping content of N type drift region 7, and promptly described first area 11 is lightly doped P+ zone.Described P type collector region 8 is provided with metallization collector electrode 9, and the material of described metallization collector electrode 9 comprises aluminium, titanium, nickel, silver or golden.First area 11, second area 14 equal ohmic contact in described metallization collector electrode 9 and the P type collector region 8.The area ratio scope that described first area 11 and second area are 14 is 0.01～1.
The top of described N type drift region 7 is provided with P base 1, is provided with N type emitter region 2 in the described P base 1; Described adjacent P base 1 utilizes N type drift region 7 isolated.The bottom of described P base 1 is provided with P+ base 5.First interarea 15 of described N type drift region 7 is provided with the plane insulated gate structure; Described insulated gate comprises insulating oxide 3 and conductive polycrystalline silicon 4; Described insulating oxide 3 contacts with 7 interior adjacent P bases 1, N type drift region and 1 interior corresponding N type emitter region 2, described P base.Described insulating oxide 3 is provided with insulating medium layer 10 with conductive polycrystalline silicon 4, described insulating medium layer 10 coated insulation oxide layers 3 and conductive polycrystalline silicon 4, and insulating medium layer 10 can be isolated with insulating oxide 3, conductive polycrystalline silicon 4 and the emitter 6 that metallizes.Also be deposited with metallization emitter 6 on first interarea 15 of described N type drift region 7, described metallization emitter 6 covers on first interarea 15, and coated insulation dielectric layer 10.Described metallization emitter 6 all electrically connects with N type emitter region 2, P base 1, makes 1 of N type emitter region 2 and P base have equal potentials.
Described insulating oxide 3 all is positioned on first interarea 15 with conductive polycrystalline silicon 4, forms the plane insulated gate structure.The material of described N type drift region 7 comprises silicon.The material of insulating medium layer 10 comprises silex glass (USG), boron-phosphorosilicate glass (BPSG) or phosphorosilicate glass (PSG).On the cross section of described semiconductor IGBT device, the first areas 11 in the P type collector region 8 are distributing along the direction that flows perpendicular to electric current, and that the shape of described first area 11 comprises is square, bar shaped or circle; Second areas 14 in the P type collector region 8 are distributing along the direction that flows perpendicular to electric current, and that the shape of described second area 14 comprises is square, bar shaped or circle.
As shown in Figure 5: for adopting the insulated gate bipolar transistor IGBT of groove-shaped insulated gate structure.On the insulated gate bipolar transistor IGBT cross section, 7 tops, described N type drift region are provided with P base 1, and described P base 1 runs through N type drift region 7.Be provided with groove 12 in the described P base 1, described groove 12 is positioned at P base 1, and the degree of depth extends to the N type drift region 7 of 1 below, P base.The growth of described groove 12 inwalls has insulating oxide 3, is deposited with conductive polycrystalline silicon 4 in described growth has the groove 12 of insulating oxide 3.The top of described groove 12 outer walls is provided with N type emitter region 2, and described N type emitter region 2 contacts with the outer wall of groove 12.The notch of groove 12 is covered by insulating medium layer 10, also is deposited with metallization emitter 6 on first interarea 15 of described N type drift region 7.Described metallization emitter 6 covers first interarea 15, and surrounds insulating medium layer 10; Described metallization emitter 6 all electrically connects with N type emitter region 2, P base 1, makes P base 1 and N type emitter region 2 have equal potentials.
As shown in Figure 6:, in described P type collector region 8, be provided with N+ collector electrode shorting region 13 for adopting the insulated gate bipolar transistor IGBT of plane insulated gate structure.As shown in Figure 6: the top of described N type drift region 7 is provided with P base 1, is provided with two N type emitter regions 2 in the described P base 1; Described adjacent P base 1 utilizes N type drift region 7 isolated.The bottom of described P base 1 is provided with P+ base 5.First interarea 15 of described N type drift region 7 is provided with the plane insulated gate structure; Described insulated gate comprises insulating oxide 3 and conductive polycrystalline silicon 4; Described insulating oxide 3 contacts with 7 interior adjacent P bases 1, N type drift region and 1 interior corresponding N type emitter region 2, described P base.Described insulating oxide 3 is provided with insulating medium layer 10 with conductive polycrystalline silicon 4, described insulating medium layer 10 coated insulation oxide layers 3 and conductive polycrystalline silicon 4, and insulating medium layer 10 can be isolated with insulating oxide 3, conductive polycrystalline silicon 4 and the emitter 6 that metallizes.Also be deposited with metallization emitter 6 on first interarea 15 of described N type drift region 7, described metallization emitter 6 covers on first interarea 15, and coated insulation dielectric layer 10.Described metallization emitter 6 all electrically connects with N type emitter region 2, P base 1, makes 1 of N type emitter region 2 and P base have equal potentials.
Be formed with P type collector region 8 on second interarea 16 of described N type drift region 7, comprise one or more first areas 11 and one or more second area 14 in the described P type collector region 8, described first area 11 is the P conduction type with second area 14; Described first area 11 surrounds a plurality of second areas 14 or second area 14 and alternately adjacency setting of first area 11; In the present embodiment, 14 of described first area 11 and second areas adopt alternately in abutting connection with being provided with, as shown in Figure 6.Described first area 11 has first doping content, and second area 14 has second doping content, and first doping content of described first area 11 is less than second doping content of second area 14; And first doping content of first area 11 is greater than the doping content of N type drift region 7, and promptly described first area 11 is lightly doped P+ zone.Also be provided with N+ collector electrode shorting region 13 in the described P type collector region 8, described N+ collector electrode shorting region 13 is in contact with second interarea 16, the metallization collector electrode 9 of N type drift region 7; Described P type collector region 8 is provided with metallization collector electrode 9, and the material of described metallization collector electrode 9 comprises aluminium.First area 11, second area 14, N+ collector electrode shorting region 13 equal ohmic contact in described metallization collector electrode 9 and the P type collector region 8.
The working mechanism that the present invention has the IGBT of improved-type collector structure is: the collector region of the non-punch through IGBT that P type collector region 8 contrasts of described IGBT are traditional, be set to have the first area 11 and second area 14 of different levels of doping, described first area 11 is alternately to surround second area 14 in abutting connection with setting or first area 11 with second area 14, and the P type collector region 8 that forms is inlayed in the zone thereby formation has the height doping content.When insulated gate bipolar transistor IGBT works in the forward conduction state, specifically, for metallization collector electrode 9 applies forward bias voltage, metallization emitter 6 connecting to neutral current potentials, gate terminal applies the bias voltage that is higher than device threshold voltage (Vth), the first area 11 of low concentrations flows into charge carrier quantity in the N type drift region 7 and will be starkly lower than second areas 14 in the P type collector region 8 and flow into charge carrier quantity in the N type drift region 7 in the P type collector region 8, therefore, the existence of low concentration first area 11 has reduced the minority carrier quantum count that totally is stored in the N type drift region 7, makes the QRR of device in reversely restoring process, reverse recovery time and hangover electric current are reduced; Simultaneously, the high injection efficiency of high concentration second area 14 has guaranteed that again device still has lower on-state voltage drop.When insulated gate bipolar transistor IGBT works in reverse bias condition, specifically, refer to that metallization collector electrode 9 applies forward bias voltage, metallization emitter 6 connecting to neutral current potentials, gate terminal applies bias voltage or the connecting to neutral current potential that is lower than device threshold voltage (Vth), because P type collector region 8 second areas 14 will be significantly less than first area 11 and N type drift region 7 formed concentration gradients with N type drift region 7 formed concentration gradients, therefore, the minority carrier quantum count that is stored in the second area 14 will be more than the minority carrier that is stored in the first area 11, these are stored in that minority carriers in the P type collector region 8 also can be scanned out or are compound in the device reversely restoring process, so in the later stage of device reversely restoring process, these minority carriers that are stored in the P type collector region 8 still need by compound disappearance, thereby produce soft recovery characteristics, reduce overshoot voltage, improved the impact resistance of device.
The present invention is by being provided with the first area 11 and second area 14 with different levels of doping in P type collector region 8, contrast traditional non-punch through IGBT, improved the reverse recovery " hardness " of device in turn off process, reduced the overshoot voltage that device oppositely recovers, improved the resistance to impact of device, obtained better on-state voltage drop, made to have balance preferably between turn-off power loss and the impact resistance.
Claims (9)
1. the IGBT with improved-type collector structure on the cross section of described semiconductor IGBT device, comprises the semiconductor substrate of first conduction type with two relative interareas, and semiconductor substrate comprises first interarea and second interarea; The second conduction type collector region is set on second interarea of described semiconductor substrate, is deposited with the metallization collector electrode on the described second conduction type collector region; Be provided with the second conduction type base in the described semiconductor substrate, the described second conduction type base is close to first interarea, and contacts with first interarea; The top of the described second conduction type base is provided with the first conduction type emitter region; Also be provided with insulated gate, insulating medium layer and metallization emitter on first interarea of described semiconductor substrate; Described insulated gate contacts with the first conduction type emitter region, and described insulated gate utilizes insulating medium layer isolated with the metallization emitter; Described metallization emitter is deposited on first interarea, and electrically contacts with the first conduction type emitter region, the second conduction type base; It is characterized in that:
On the cross section of described semiconductor IGBT device, the described second conduction type collector region comprises one or more first area and one or more second areas with second doping content with first doping content, and described first area surrounds a plurality of second areas or first area and second area alternately in abutting connection with being provided with;
First doping content of described first area is less than second doping content of second area, and first doping content of described first area is greater than the doping content of the first conductive type semiconductor substrate.
2. according to the described IGBT with improved-type collector structure of claim 1, it is characterized in that: on the cross section of described semiconductor IGBT device, described insulated gate comprises insulating oxide and the conductive polycrystalline silicon that is positioned on the insulating oxide; Described insulating oxide is positioned on first interarea, on described insulating oxide and the semiconductor substrate in the adjacent second conduction type base and the described adjacent second conduction type base the first corresponding conduction type emitter region be in contact; The described second adjacent conduction type base utilizes first conductive type layer of semiconductor substrate isolated.
3. according to the described IGBT with improved-type collector structure of claim 1, it is characterized in that: on the cross section of described semiconductor IGBT device, described insulated gate comprises groove; Described groove is positioned at the second conduction type base, and extends in the first conductive type semiconductor substrate of below, the second conduction type base; The second conduction type base is positioned at the top of semiconductor substrate, and the growth of described trench wall has insulating oxide, and is deposited with conductive polycrystalline silicon in described growth has the groove of insulating oxide; The notch of described groove is covered by insulating medium layer, and described groove is equipped with the first conduction type emitter region corresponding to the top of sidewall, and the described first conduction type emitter region contacts with groove.
4. according to the described IGBT of claim 1 with improved-type collector structure, it is characterized in that: on the cross section of described semiconductor IGBT device, first area in the described second conduction type collector region is distributing along the direction that flows perpendicular to electric current, and that the shape of described first area comprises is square, bar shaped or circle.
5. according to the described IGBT of claim 1 with improved-type collector structure, it is characterized in that: on the cross section of described semiconductor IGBT device, second area in the described second conduction type collector region is distributing along the direction that flows perpendicular to electric current, and that the shape of described second area comprises is square, bar shaped or circle.
6. according to the described IGBT of claim 1 with improved-type collector structure, it is characterized in that: on the cross section of described semiconductor IGBT device, the area of corresponding first area and the area ratio of second area are 0.01～1 in the described second conduction type collector region.
7. according to the described IGBT of claim 1 with improved-type collector structure, it is characterized in that: on the cross section of described semiconductor IGBT device, be provided with the first conduction type collector electrode shorting region in the described second conduction type collector region, the described first conduction type collector electrode shorting region contacts with the first conductive type semiconductor substrate, metallization collector electrode; Described metallization collector electrode and the first conduction type collector electrode shorting region, first area and the equal ohmic contact of second area.
8. according to the described IGBT with improved-type collector structure of claim 1, it is characterized in that: described insulating medium layer is silex glass (USG), boron-phosphorosilicate glass (BPSG) or phosphorosilicate glass (PSG).
9. according to the described IGBT with improved-type collector structure of claim 1, it is characterized in that: the material of described semiconductor substrate comprises silicon.
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102544100A (en) * | 2010-12-14 | 2012-07-04 | 万国半导体股份有限公司 | Self aligned trench MOSFET with integrated diode |
| CN102637732A (en) * | 2012-03-31 | 2012-08-15 | 上海宏力半导体制造有限公司 | Insulated gate bipolar transistor (IGBT) |
| CN102832240A (en) * | 2012-09-11 | 2012-12-19 | 电子科技大学 | Insulated gate bipolar transistor with dielectric layer at collector terminal |
| CN102903743A (en) * | 2012-10-29 | 2013-01-30 | 江苏物联网研究发展中心 | Power semiconductor device structure adopting metal silicide and manufacturing method of power semiconductor device structure |
| WO2014086015A1 (en) * | 2012-12-06 | 2014-06-12 | 中国科学院微电子研究所 | Ti-igbt and formation method thereof |
| CN103887240A (en) * | 2012-12-20 | 2014-06-25 | 上海宝芯源功率半导体有限公司 | Preparation method of reverse-conduction-type IGBT device |
| CN104054179A (en) * | 2012-01-24 | 2014-09-17 | 丰田自动车株式会社 | Semiconductor device |
| WO2014206160A1 (en) * | 2013-06-28 | 2014-12-31 | 无锡华润上华半导体有限公司 | Insulated gate bipolar transistor and manufacturing method therefor |
| CN104299990A (en) * | 2013-07-19 | 2015-01-21 | 无锡华润上华半导体有限公司 | IGBT (Insulated Gate Bipolar Transistor) and manufacture method thereof |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080023763A1 (en) * | 2006-07-19 | 2008-01-31 | Blanchard Richard A | Threshold-voltage trimming of insulated-gate power devices |
| JP2008153358A (en) * | 2006-12-15 | 2008-07-03 | Mitsubishi Electric Corp | Method of manufacturing silicon carbide semiconductor device |
| CN201725797U (en) * | 2010-06-04 | 2011-01-26 | 无锡新洁能功率半导体有限公司 | IGBT with improved collector electrode structure |
-
2010
- 2010-06-04 CN CN 201010191133 patent/CN101887913B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080023763A1 (en) * | 2006-07-19 | 2008-01-31 | Blanchard Richard A | Threshold-voltage trimming of insulated-gate power devices |
| JP2008153358A (en) * | 2006-12-15 | 2008-07-03 | Mitsubishi Electric Corp | Method of manufacturing silicon carbide semiconductor device |
| CN201725797U (en) * | 2010-06-04 | 2011-01-26 | 无锡新洁能功率半导体有限公司 | IGBT with improved collector electrode structure |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102544100B (en) * | 2010-12-14 | 2015-04-08 | 万国半导体股份有限公司 | Self aligned trench MOSFET with integrated diode |
| US8980716B2 (en) | 2010-12-14 | 2015-03-17 | Alpha And Omega Semiconductor Incorporated | Self aligned trench MOSFET with integrated diode |
| US9911840B2 (en) | 2010-12-14 | 2018-03-06 | Alpha And Omega Semiconductor Incorporated | Self aligned trench MOSFET with integrated diode |
| CN104054179A (en) * | 2012-01-24 | 2014-09-17 | 丰田自动车株式会社 | Semiconductor device |
| CN104054179B (en) * | 2012-01-24 | 2017-07-18 | 丰田自动车株式会社 | Semiconductor device |
| CN102637732A (en) * | 2012-03-31 | 2012-08-15 | 上海宏力半导体制造有限公司 | Insulated gate bipolar transistor (IGBT) |
| CN102637732B (en) * | 2012-03-31 | 2017-06-16 | 上海华虹宏力半导体制造有限公司 | Insulated gate bipolar transistor |
| CN102832240A (en) * | 2012-09-11 | 2012-12-19 | 电子科技大学 | Insulated gate bipolar transistor with dielectric layer at collector terminal |
| CN102903743A (en) * | 2012-10-29 | 2013-01-30 | 江苏物联网研究发展中心 | Power semiconductor device structure adopting metal silicide and manufacturing method of power semiconductor device structure |
| CN102903743B (en) * | 2012-10-29 | 2015-03-18 | 江苏物联网研究发展中心 | Power semiconductor device structure adopting metal silicide and manufacturing method of power semiconductor device structure |
| WO2014086015A1 (en) * | 2012-12-06 | 2014-06-12 | 中国科学院微电子研究所 | Ti-igbt and formation method thereof |
| US9461116B2 (en) | 2012-12-06 | 2016-10-04 | Institute of Microelectronics, Chinese Academy of Sciences | Method of formation of a TI-IGBT |
| CN103887240A (en) * | 2012-12-20 | 2014-06-25 | 上海宝芯源功率半导体有限公司 | Preparation method of reverse-conduction-type IGBT device |
| CN103887240B (en) * | 2012-12-20 | 2016-08-24 | 上海宝芯源功率半导体有限公司 | A kind of preparation method of inverse conductivity type IGBT device |
| WO2014206160A1 (en) * | 2013-06-28 | 2014-12-31 | 无锡华润上华半导体有限公司 | Insulated gate bipolar transistor and manufacturing method therefor |
| CN104299990A (en) * | 2013-07-19 | 2015-01-21 | 无锡华润上华半导体有限公司 | IGBT (Insulated Gate Bipolar Transistor) and manufacture method thereof |
| WO2019085850A1 (en) * | 2017-11-01 | 2019-05-09 | 苏州东微半导体有限公司 | Igbt power device |
| KR20200027014A (en) * | 2017-11-01 | 2020-03-11 | 수 조우 오리엔탈 세미컨덕터 콤퍼니 리미티드 | IGBT Power Device |
| US11081574B2 (en) | 2017-11-01 | 2021-08-03 | Suzhou Oriental Semiconductor Co., Ltd. | IGBT power device |
| KR102292410B1 (en) | 2017-11-01 | 2021-08-23 | 수 조우 오리엔탈 세미컨덕터 콤퍼니 리미티드 | IGBT power device |
| CN110034185A (en) * | 2018-01-11 | 2019-07-19 | 丰田自动车株式会社 | Semiconductor device |
| CN110034185B (en) * | 2018-01-11 | 2022-06-14 | 株式会社电装 | Semiconductor device with a plurality of semiconductor chips |
| CN111524970A (en) * | 2020-01-09 | 2020-08-11 | 杭州电子科技大学 | 4H-SiC groove insulated gate bipolar transistor |
| WO2022206299A1 (en) * | 2021-03-30 | 2022-10-06 | 无锡华润华晶微电子有限公司 | Semiconductor structure and preparation method therefor |
| CN114759078A (en) * | 2022-03-28 | 2022-07-15 | 重庆大学 | Reverse conducting insulated gate bipolar transistor |
| CN114937690A (en) * | 2022-06-06 | 2022-08-23 | 电子科技大学 | Planar silicon carbide insulated gate bipolar transistor and manufacturing method thereof |
| CN114937690B (en) * | 2022-06-06 | 2023-04-28 | 电子科技大学 | Planar silicon carbide insulated gate bipolar transistor and manufacturing method thereof |
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