CN101887877B - The manufacture method of lead frame - Google Patents
The manufacture method of lead frame Download PDFInfo
- Publication number
- CN101887877B CN101887877B CN200910179516.6A CN200910179516A CN101887877B CN 101887877 B CN101887877 B CN 101887877B CN 200910179516 A CN200910179516 A CN 200910179516A CN 101887877 B CN101887877 B CN 101887877B
- Authority
- CN
- China
- Prior art keywords
- roughening
- base material
- lead frame
- face
- surperficial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 86
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 238000007788 roughening Methods 0.000 claims abstract description 161
- 239000000463 material Substances 0.000 claims abstract description 115
- 239000007769 metal material Substances 0.000 claims abstract description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000011112 process operation Methods 0.000 claims description 7
- 238000004080 punching Methods 0.000 claims description 7
- 238000005096 rolling process Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 46
- 239000008393 encapsulating agent Substances 0.000 abstract description 5
- 229910052802 copper Inorganic materials 0.000 description 68
- 239000010949 copper Substances 0.000 description 68
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 67
- 239000000758 substrate Substances 0.000 description 20
- 229920005989 resin Polymers 0.000 description 19
- 239000011347 resin Substances 0.000 description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 16
- 238000007789 sealing Methods 0.000 description 16
- 238000007747 plating Methods 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 8
- 239000002390 adhesive tape Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 238000003556 assay Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920005644 polyethylene terephthalate glycol copolymer Polymers 0.000 description 1
- -1 polypropylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
The invention provides and can guarantee roughening quality and the manufacture method of lead frame, semiconductor device and the lead frame that can cheap provide.Lead frame of the present invention (1) possess be made up of metal material base material (10), arrange in a part for base material (10), can semiconductor element mounted thereon element mounting portion (20), as the surface of base material (10) a part and in the upper at least partially roughening face (30) arranged in the region that the encapsulant of the described semiconductor element carried with potted component equipped section (20) contacts.
Description
Technical field
The present invention relates to the manufacture method of lead frame, semiconductor device and lead frame, the present invention be more particularly directed to the lead frame of enforcement roughening process, use the semiconductor device of this lead frame and the manufacture method of this lead frame.
Background technology
In recent years, in order to improve the reliability of semiconductor packages, to improving, the requirement implementing the lead frame of roughening process and the adhesion of resin on the surface of lead frame is also more and more higher.Such lead frame, there will be a known by the plate mat portion of semiconductor element mounted thereon and form with the leading part that semiconductor carries out being electrically connected, the lead frame that is provided with the nest platform (デ イ Application プ Le) from the teeth outwards with multiple microspike in the region of regulation comprising plate mat portion and leading part (such as with reference to patent documentation 1).Lead frame described in patent documentation 1, after formed the lead frame with plate mat portion and leading part by metal raw sheet, forms nest platform and tiny projection on the surface of the lead frame formed.
Lead frame described in patent documentation 1, owing to forming the nest platform with multiple projection on metal raw sheet, so the resin entering jut gap just plays the embedding effect of anchor, can improve the adhesion of resin and lead frame thus.
Patent documentation 1: JP 2008-71886 publication
Summary of the invention
But, the lead frame recorded in patent documentation 1, after the shape forming lead frame, nest platform to be formed on the surface of lead frame, microspike is formed on the surface of nest platform, so in the manufacture of this lead frame, require on the lead frame of multiple billet shape, one by one to form nest platform and microspike respectively.Therefore, for the lead frame described in patent documentation 1, be difficult to reduce its manufacturing cost when the quality of the nest platform maintained required by certain lead frame and microspike.
Therefore, the object of the present invention is to provide and guarantee roughening quality and the lead frame that can cheap provide, semiconductor device and manufacture the method for lead frame with a kind of.
To achieve these goals, the invention provides a kind of lead frame, it possess be made up of metal material base material, arrange in a part for this base material can semiconductor element mounted thereon element mounting portion and as the surface of base material a part, the region that the encapsulant of the semiconductor element carried with potted component equipped section contacts at least partially on the roughening face that arranges.
The roughening face of above-mentioned lead frame is preferably placed at than substrate surface closer to the position inside base material.
The roughening face of above-mentioned lead frame preferably has the roughness larger than the roughness of substrate surface.
Above-mentioned lead frame is preferably also provided with conductive layer in a part for substrate surface.
In addition, to achieve these goals, the invention provides a kind of semiconductor device, its have the base material be made up of metal material, the semiconductor element be mounted in the element mounting portion that is arranged in a part for this base material, for sealing semiconductor element sealing and as a substrate surface part, the region contacted with sealing at least partially on the roughening face that arranges.
The roughening face of above-mentioned semiconductor device is preferably placed at than substrate surface closer to the position inside base material.
The roughening face of above-mentioned semiconductor device preferably has the roughness larger than the roughness of substrate surface.
Above-mentioned semiconductor device is preferably also provided with conductive layer in a part for substrate surface.
In addition, to achieve these goals, the present invention also provides a kind of preparation method of lead frame, its have the base material preparatory process preparing the base material be made up of metal material, the mask process that mask parts is set in the region that substrate surface presets, take mask parts as mask substrate surface implement roughening process form roughening process after base material roughening operation, base material is implemented the punch process operation of punching press process after roughening process.
In the roughening operation of the preparation method of above-mentioned lead frame, preferably formed in a part for substrate surface and be positioned at than substrate surface closer to the roughening face inside base material.
In the roughening operation of the preparation method of above-mentioned lead frame, be preferably formed the roughening face with the roughness larger than the roughness of substrate surface.
In the preparation method of above-mentioned lead frame, implement mask process preferably by the volume to volume electroplanting device (リ-Le め つ I device) arranging mask parts at substrate surface, preferably in volume to volume electroplanting device, implement roughening operation.
In the preparation method of above-mentioned lead frame, the conductive layer formation process forming conductive layer in a part for substrate surface can also be had.
Can also have in base material preparatory process in the preparation method of above-mentioned lead frame and rolls is coiled into reel and prepares reel base material, the rolls after the roughening process implementing punching press process after punch process operation be coiled into the rolling step of reel.
According to the manufacture method of lead frame of the present invention, semiconductor device and lead frame, can provide and guarantee roughening quality and the manufacture method of lead frame, semiconductor device and the lead frame that can cheap provide.
Accompanying drawing explanation
Fig. 1 is the sectional view of the lead frame of the first execution mode of the present invention.
Fig. 2 is the amplification sectional view of the substrate surface of the first execution mode of the present invention and a part for roughened surface.
Fig. 3 A is the synoptic diagram of the manufacturing process of the lead frame of the first execution mode of the present invention.
Fig. 3 B is the synoptic diagram of the manufacturing process of the lead frame of the first execution mode of the present invention.
Fig. 3 C is the synoptic diagram of the manufacturing process of the lead frame of the first execution mode of the present invention.
Fig. 4 is the sectional view of the lead frame of the second execution mode of the present invention.
Fig. 5 A is the synoptic diagram of the manufacturing process of the lead frame of the second execution mode of the present invention.
Fig. 5 B (a) and (b) are the simplified schematic cross-sectional view of the lead frame of the variation of the second execution mode of the present invention.
Fig. 6 is the sectional view of the semiconductor device of the 3rd execution mode of the present invention.
Fig. 7 is the synoptic diagram copper material with roughening face being carried out to resin coupled assay of embodiment.
Fig. 8 is the figure of display coupled assay result.
Fig. 9 is the synoptic diagram of the vertical view of the base material implementing punch process.
Figure 10 is implement roughening process in a part for substrate surface after, when applying punch process, and the comparison diagram observed with the region of the contacting dies of stamping machine and the SEM in discontiguous region.
Symbol description
1,1a: lead frame; 2: semiconductor device; 3: the copper material with roughening face; 5: sheet lead frame; 7: web-like lead frame; 10,11: base material; 10a, 10b: substrate surface; 11a, 11b: region; 15: copper bar; 15a, 15b: surface; 17: copper bar after roughening; 20: element mounting portion; 30,31: roughening face; 30a: protuberance; 30b: recess; 31a: region; 40: lead-in wire; 50: sealing; 55: resin; 60: mask; 70: conductive layer; 74: coating: 80: semiconductor element; 85: chip bonding material; 90: wire; 100: volume to volume electroplanting device; 110: stamping machine; 112: part; 115: die-cut portion; 120: hot plate; 125: stopper.
Embodiment
First execution mode
Fig. 1 represents an example of the summary in the cross section of the lead frame of the first execution mode of the present invention, and Fig. 2 represents an example of the summary of the enlarged cross section of the substrate surface of the first execution mode of the present invention and the part in roughening face.
The structural outline of lead frame 1
The lead frame of the first execution mode has: the base material 10 be made up of metal material used as the raw material of lead frame, arrange in a part for base material 10 and can semiconductor element mounted thereon element mounting portion 20, as base material 10 a part and the presumptive area contacted with the encapsulant of the semiconductor element encapsulation that element mounting portion is carried at least partially on the roughening face 30 that arranges.In addition, lead frame 1 arranges the lead-in wire 40 that can supply electric power to semiconductor element on the position from element mounting portion 20 outer rim predetermined distance.In FIG with the region that double dot dash line represents, represent the example forming the region of sealing 50 when encapsulant is set on lead frame 1.
Base material 10
About base material 10, as an example, according to the characteristic of used semiconductor element, the thin plate (as an example, thickness of slab is 0.08 ~ 3.00mm) be made up of the metal material with regulation pyroconductivity and regulation conductivity is formed.Copper, copper alloy, aluminium or aluminium alloy etc. can be used as metal material.And then in order to make lead frame 1 play the characteristic such as the intensity of regulation, the thermal endurance of regulation, the Addition ofelements such as iron, zinc, phosphorus, tin, nickel of ormal weight can also be added in metal material.In addition, as base material 10, the material of the thin plate that metal bond is made up of the metal material specifying on two surfaces that can also be used in the thin plate be made up of the metal material specifying.Base material 10 in present embodiment, as an example, is looked from vertical view, is formed as having the region of the roughly square shape in element mounting portion 20 as described later and comprises the end of lead-in wire 40.And the surface of base material 10 comprises the surperficial 10a that is provided with side, element mounting the portion 20 and surperficial 10b with surperficial 10a opposition side.
Element mounting portion 20
Element mounting portion 20 is arranged on the regulation region of the surperficial 10a of base material 10.The region arranging element mounting portion 20 is decided by the shape of the semiconductor element carried in element mounting portion 20.As the semiconductor element carried in element mounting portion 20, such as can the illustrate integrated circuits such as IC, LSI, light-emitting component, photo detector, small-signal transistor or power transistor etc.
Roughening face 30
Roughening face 30 is formed in surface than base material 10 closer to inside base material 10.Concrete, with reference to Fig. 2.Roughening face 30 in Fig. 2, with surperficial 10a for datum level time, the position that specific surface 10a is lower is formed.When surperficial 10b is formed roughening face 30, during with surperficial 10b for datum level, the position that specific surface 10b is lower forms this roughening face 30.That is, the roughening face 30 in present embodiment, if with the center line A-A in the thickness of slab direction of base material 10 for benchmark, is then being formed than on the surperficial 10a of base material 10 and the position of surperficial 10b closer to center line A-A.In addition, roughening face 30, as long as the region on surface at the base material 10 that can contact with encapsulant, also can be arranged near the region between lead-in wire 40 and element mounting portion 20, lead-in wire 40.
In addition, roughening face 30 is formed as having the roughness larger than the roughness on the surface (i.e. surperficial 10a and surperficial 10b in Fig. 2) of base material 10.Such as, roughening face 30 is formed as having protuberance 30a and recess 30b, and surperficial 10a and surperficial 10b is formed as not having substantial concavo-convex.Namely detect by an unaided eye, surperficial 10a and surperficial 10b is formed as having gloss, and roughening face 30 is formed as lackluster.In present embodiment, " lackluster " refers to by light scattering on roughening face 30, when visually seeing " obfuscation ".As long as the front end of protuberance 30a is formed on the position of the surface than base material 10 closer to center line A-A, distance D between this surface and protuberance 30a is not limited, but as an example, this distance D (namely in Fig. 2 surperficial 10a and protuberance 30a front end between distance) be about 1 μm.
Lead-in wire 40
Lead-in wire 40 is arranged on one end of lead frame 1.In lead frame in modified embodiment of the present embodiment, according to the use form of lead frame, can arrange on the both sides of one end of lead frame and the other end.And then, in other variation of present embodiment, multiple lead-in wire 40 can be set around lead frame.
The manufacture method of lead frame 1
Fig. 3 A ~ Fig. 3 C shows an example of the summary of the manufacturing process of the lead frame of the first execution mode of the present invention.Concrete, Fig. 3 A shows an example of the summary of the operation in the roughening face of the lead frame forming present embodiment, and Fig. 3 B shows the summary in the cross section of the copper bar part formed in the operation of roughening face.In addition, Fig. 3 C shows the summary of the stamping procedure in the manufacturing process of lead frame in present embodiment.
First, as shown in Figure 3A, the bonding jumper coil sheet of metal material being coiled into reel is prepared.In present embodiment, as an example, the copper bar 15 preparing to be made up of copper is used as the material (base material preparatory process) of base material.Then, volume to volume electroplanting device 100 is passed through in one end of copper bar 15.Volume to volume electroplanting device 100 also can be called bar plating (ス ト ラ イ プ め つ I) device or front plating appts.In addition, before or after base material preparatory process, the operation of cleaning substrate surface can also be set further.And copper bar 15 can use the certain riglet of thickness (namely the cross section of copper bar is rectangular copper bar) or have any one of irregular strip (namely the cross sectional shape of copper bar is concavo-convex copper bar) of different-thickness.
Afterwards, while the surface of copper bar 15 attaches mask parts or after attaching mask parts, implement roughening process at once.Concrete as shown in Fig. 3 B (a), within volume to volume electroplanting device 100, first using the presumptive area (mask process) of the surperficial 15a that attaches to as the mask adhesive tape (mask 60 of Fig. 3 B) of mask parts as the copper bar 15 of base material and surperficial 15b.Wherein, surperficial 15b is the surface of the opposition side of surperficial 15a.Presumptive area determines aptly according to the lead frame that will manufacture.As an example, many mask tape stickers are attached to the surperficial 15a of copper bar 15 and surperficial 15b by the Width of copper bar 15 at predetermined intervals.
Mask adhesive tape is the material that can tolerate mechanism in the etch processes of roughening operation described later and chemical action, such as, formed by the macromolecular material such as polypropylene, PETG.In addition, as mask parts, can also use the mask be made up of rubber etc. is mechanically anchored in copper bar 15 surperficial 15a and surperficial 15b on Mechanical masks.
Then, as shown in Fig. 3 B (b), in volume to volume electroplanting device 100, by using mask adhesive tape as mask, roughening process is implemented to the surperficial 15a of copper bar 15 and surperficial 15b that do not arrange mask adhesive tape, form roughening face 30, manufacture the base material (roughening operation) after roughening process.Roughening process uses to etch substrate surface and the etching solution of roughening (hereinafter referred to as " etchant ") is implemented.The etchant of sulfuric acid system such as can be adopted for copper bar 15.Like this, than forming the surperficial 15a of copper bar 15 of base material and surperficial 15b closer to the roughening face 30 on the position of the inner side of copper bar 15, the surperficial 15a on surface 15 and a part of surperficial 15b are formed.If that is, with the center line of the thickness direction of copper bar 15 for benchmark, then roughening face 30 is formed closer on the position of this center line at the surperficial 15a of specific surface 15 and surperficial 15b.In addition, the roughening face 30 formed by such roughening process is become to be had than the surperficial 15a of copper bar 15 and the larger roughness of the roughness of surperficial 15b.
Then, in volume to volume electroplanting device 100, mask adhesive tape is taken off.Copper bar is discharged from volume to volume electroplanting device 100, copper bar 15 is now formed with roughening face 30 in predetermined region, and is corresponding to the surperficial 15a subregion that covers of masked adhesive tape with copper bar and surperficial 15b (in figure 3 a not figure presentation surface 15b).Then, by by shaft-like wound into a roll for this copper bar, produce copper bar 17 after the roughening as base material after roughening.
Then, as shown in Figure 3 C, copper bar after roughening 17 is put in stamping machine 110, by manufacturing lead frame (punch process operation) to copper bar after roughening 17 punching press process in real time.That is, in present embodiment, after roughening operation, punch process operation is implemented.Stamping machine 110 has formation regulation shape lead frame mould, carries out punch process by this mould to copper bar after roughening 17.Roughening face 30 in present embodiment, to compare with the surperficial 15a of copper bar 17 after the roughening except this roughening face 30 inner side being positioned at copper bar 17 after roughening with surperficial 15b.Therefore, for roughening face 30, except the very finite part of the outer rim of punch-out, the mould of stamping machine 110 can be suppressed directly to be contacted with roughening face 30, and therefore the impact (be namely called roughening face 30 impaired impact) of punch process on roughening face 30 wants the impact of comparison surface 15a and surperficial 15b much little.
In addition, when copper bar 17 is put in stamping machine 110 after by roughening, in order to copper bar 17 after the roughening of shaft-like wound into a roll is adjusted to approximate horizontal, also can put in stamping machine 110 by copper bar 17 after level(l)ing machine is by roughening.Even so, because roughening face 30 is positioned at the inner side of specific surface 15a and surperficial 15b closer to copper bar after roughening 17, level(l)ing machine can be suppressed directly to contact with roughening face 30, suppress the damage in roughening face 30.
Then, after punch process, by cutting off copper bar 17 after the roughening each specific length implementing punch process, by regulation shape lead frame be formed as sheet thus form sheet lead frame 5 (cut-out operation).In addition, by copper bar 17 after the roughening implementing punch process is wound as the reel with specified diameter after punch process, web-like lead frame 7 (rolling step) can also be produced.
In addition, when manufacturing web-like lead frame 7, when preparing reel copper bar 15 in base material preparatory process, the lead frame of present embodiment can be manufactured by reel-to-reel (ReeltoReel) mode.In addition, be attached with on lead frame by punch process use in stamping machine 110 oily time, matting can also be implemented after punch process operation.
The effect of the first execution mode
The lead frame 1 of present embodiment has roughening face 30, it is as a part of surperficial 10a and surperficial 10b, and be positioned at specific surface 10a and surperficial 10b closer to the position inside base material 10, therefore, even if when implementing punch process in lead frame manufacturing process, that situation that roughening face 30 is damaged in stamping machine 110 when resembling the whole roughening of surperficial 10a can be suppressed.Thus, the lead frame 1 of present embodiment can guarantee the quality in the roughening face 30 required by this lead frame 1 under the prerequisite of thickness not changing base material 10.
In addition, the lead frame 1 of present embodiment in the state of the copper bar 15 of feed states and large reel, can form roughening face 30 on the surface of copper bar 15 by the mode of reel-to-reel continuously.Therefore, existing bar plating appts of such as can converting, thus can suppress the rising of expense needed for roughening process.And, in present embodiment, due to the surface portion at copper bar 15 form roughening face 30, the cost of chemical reagent needed for roughening process can be reduced, the leadframe surfaces because institute's operative installations in lead frame manufacture causes (surperficial 10a, surperficial 10b and roughening face 30) can be suppressed to be polluted simultaneously, such as, can suppress the reduction of the solder wettability of outer lead.
And then when such as resembling in the past by formation roughening faces such as nickel plating, the relative height ratio in the roughening face formed by nickel plating does not have the face of roughening to want high.Therefore, if contacted with equipment such as stamping machine 110 grade in the roughening face formed by nickel plating, stain (trickle metal dust) will be produced.And on the other hand, lead frame 1 in present embodiment is owing to being formed locally roughening face 30 on the surface of copper bar 15, and roughening face 30 relative to the surperficial 15a of copper bar 15 and the relative altitude of surperficial 15b low, therefore, in present embodiment, from in the past different, the stain that the roughening face that can not occur to be made up of nickel coating contacts with equipment such as stamping machine 110 grade and causes.Like this, in present embodiment, can prevent manufacture lead frame 1 pollute by stain.
Second execution mode
Fig. 4 shows an example of the cross section summary of the lead frame of the second execution mode of the present invention.Fig. 5 A shows a part for the summary of the manufacturing process of the lead frame of the second execution mode of the present invention.In addition, Fig. 5 B (a) and Fig. 5 B (b) is an example of the cross section summary of the lead frame of the variation of the second execution mode of the present invention.
The lead frame 1a of the second execution mode is compared with the lead frame 1 of the first execution mode, except having except conductive layer 70 in the end of lead-in wire 40, there is the structure substantially same with lead frame 1, manufactured by basically identical manufacturing process, therefore, only difference is described in detail.
The lead frame 1a of the second execution mode has conductive layer 70 further going up at least partially of the surface of copper bar 15.Such as, lead frame 1a has the conductive layer 70 be made up of the metal material such as nickel, silver in the region contacted with wire, and this wire is for being electrically connected the electrode of the semiconductor element that lead frame 1a should carry and lead-in wire 40.This conductive layer 70 can be formed on the surperficial 15a of copper bar 15 and a part of surperficial 15b by galvanoplastic or vapour deposition method (such as vacuum vapour deposition, sputtering method etc.).As an example, conductive layer 70 is the coating formed by nickel plating, silver-plated etc.
Such as, by using volume to volume electroplanting device 100, as shown in Fig. 5 A (a), form conductive layer 70 (conductive layer formation process) in the regulation region of the copper bar 15 except should forming roughening face 30.And, mask adhesive tape (in Fig. 5 A for mask 60) is set in the regulation region of the copper bar 15 except should forming roughening face 30, as Fig. 5 A (b) institute is shown in the open area enforcement roughening process of mask 60.Thus, the surperficial 15a of copper bar 15 is formed roughening face 30 and conductive layer 70, surperficial 15b is formed roughening face 30.Other operation is identical with the first execution mode.
The variation of the second execution mode
As shown in Fig. 5 B (a), first implement conductive layer formation process, when implementing roughening treatment process subsequently, be formed in the lead frame 1a of the state that there is not roughening face immediately below conductive layer 70.On the other hand, as shown in Fig. 5 B (b), when first implementing roughening process and then implementing conductive layer formation process, be formed in the lead frame 1a of the state that there is roughening face immediately below conductive layer 70.
The effect of the second execution mode
The lead frame 1a of the second execution mode not only can form roughening face 30 by the mode of reel-to-reel, such as by the existing bar plating appts of conversion, roughening process and part plating (that is, roughening process and plating process can be combined online in this device) can be implemented in bar plating appts.Thus, the expense manufactured required for lead frame 1a can be reduced.
And then the lead frame 1a of the second execution mode also has conductive layer 70 due to the surface at base material, and the distance from the surface of conductive layer 70 to roughening face 30 does not comparatively have to increase during conductive layer 70.Therefore, due to the height of roughening face 30 relative to conductive layer 70 relatively can be reduced, therefore can more effectively suppress by the damage to roughening face 30 when the leveling of level(l)ing machine and punch process.
3rd execution mode
Fig. 6 is an example of the summary in the cross section of the semiconductor device showing the 3rd execution mode of the present invention.
The semiconductor device 2 of the 3rd execution mode, except on the lead frame 1 semiconductor element 80 being carried to the first execution mode, has roughly the same structure with lead frame 1, therefore, only describes difference in detail.
Semiconductor device 2 has base material 10, the element mounting portion 20 that a part for base material 10 is arranged, across the semiconductor element 80 that chip bonding material 85 carries in element mounting portion 20, the sealing 50 of sealing semiconductor element 80, a part on base material 10 surface and the region contacted with sealing 50 at least partially on the roughening face 30 that arranges, be arranged on the position from the outer rim predetermined distance in element mounting portion 20 and supply the lead-in wire 40 of electric power to semiconductor element 80, the coating 75 as conductive layer that regulation region between lead-in wire 40 and element mounting portion 20 is arranged and the wire 90 that the electrode of semiconductor element 80 and coating 75 are electrically connected.
Semiconductor element 80 is mounted in element mounting portion 20 across chip bonding material 85, and chip bonding material 85 wherein has conductivity and is fixed in element mounting portion 20 by semiconductor element 80.Chip bonding material 85 can use such as silver paste, lead-free solder, eutectic solder etc.In addition, coating 75 can by such as having the nickel coating of specific thickness, silver coating formed.And wire 90 can use golden wire, aluminum conductor etc.And then sealing 50 can at least cover semiconductor element 80 by resin materials such as epoxy resin and be formed.
The effect of the 3rd execution mode
The semiconductor device 2 of the 3rd execution mode, only form lead frame 1 base material 10 surface a part and the part in the region contacted with sealing 50 has roughening face 30.Therefore, by resin material by semiconductor element 80 modularization time, even if form the burr (Off ラ Star シ ユ パ リ) of resin material outside the position that should form sealing 50, because this burr is not formed on roughening face 30, and be formed in the surface of base material 10, so can easily eliminate (デ Off ラ Star シ ユ).
In addition, in the semiconductor device 2 of the 3rd execution mode, sealing 50 contacts with the roughening face 30 arranged in the part on the surface of base material 10.And, the closing force of roughening face 30 and sealing 50, larger than the closing force of surface and the sealing 50 except the base material 10 in roughening face 30, therefore compared to the lead frame not arranging roughening face 30, the closing force of sealing 50 and base material 10 can be improved.Like this, when the thermal cycling test keeping certain hour at low temperatures and high temperatures is respectively implemented to the semiconductor device 2 of present embodiment, even if the thermal coefficient of expansion due to semiconductor element 80 is different from the thermal coefficient of expansion of chip bonding material 85 or cause because the thermal coefficient of expansion of chip bonding material 85 is different with the thermal coefficient of expansion of base material 10 in chip bonding material 85, produce stress, also can with under the state covering whole semiconductor element 80, sealing 50 is closely sealed securely with base material 10, so chip bonding material 85 can be suppressed to peel off from base material 10.
Embodiment
Coupled assay
Fig. 7 shows the summary of the copper material with roughening face being carried out to resin coupled assay of embodiment, and Fig. 8 is the result of coupled assay.
Specifically, the difference of the adaptation with or without resin during roughening face is evaluated by coupled assay.First the copper material (hereinafter referred to as " there is the copper material 3 in roughening face ") implementing roughening process is prepared.Concrete, as copper material, prepare the copper material of C194 and OFC (by Hitachi Cable Ltd.'s system) and MF202 (Mitsubishi Electric Corporation's system).Then use sulfuric acid system etchant to carry out roughening on each copper material surface, obtain the copper material 3 with roughening face with roughening face.Then, have roughening face copper material surface a part on adhere to transfer modling thermosetting resin (hereinafter referred to as " resin 55 ").Adhesion condition is, is put on hot plate 120 in the mode making resin 55 contact with the surface of the copper material 3 with roughening face, keeps 90 seconds at the temperature of 180 DEG C, thus adheres to.Wherein, the contact area of roughening face and resin 55 is defined as 10.75cm
2.
Then, as shown in Figure 7, with the speed continuous contact of regulation, there are the parts that the surface of the copper material 3 in roughening face moves in parallel in the side of resin 55, coming to apply to bear a heavy burden to resin 55, measure heavy burden when resin 55 is peeled off from the copper material 3 with roughening face.Wherein, the copper material 3 with roughening face is close to stopper 125, the side of resin 55 applies bear a heavy burden to make the direction existed towards stopper 125 that parts are moved, and the Speed Setting of parts movement is 50 μm/second.
Its result, as shown in Figure 8, when to use in C194, OFC and MF202 any one as copper material, compared with the copper flat surface not implementing roughening process, when implementing roughening to copper material surface, the closing force of resin 55 is improved.
The state in roughening face before and after punching press
Fig. 9 shows the summary of the vertical view implementing base material after punch process, Figure 10 be the surface of the base material be made up of CIC a part on implement roughening process after, the comparison observed with the SEM in the mould of the stamping machine region contacted and the region do not contacted when implementing punch process.
Specifically, prepare have thickness 0.4mm, wide 65mm, long 100mm size by copper/invar/copper-clad cover material=1: the base material 11 that 2: 1 (hereinafter referred to as " CIC ") are formed, implement roughening process formation roughening face 31 in a part of region on the surface of base material 11 after, implement punch process, SEM is implemented to the surface state of base material 11 and observes (multiplication factor is 5000 times).Observation part is the region 31a in roughening face 31 in the part 112 corresponding to die for punching machine in the burr side in roughening face 31 and die-cut portion 115.
Wherein, punch process is the processing forming the square opening 11b of 9mm in the regulation region (concrete in the region across roughening face 31 and region 11a and the Liang Ge position, region across roughening face 31 and region 11c) of base material 11, and the pressure of the punch process of use is 80t.In addition, the etchant of sulfuric acid system is used to implement roughening process.And, roughening face 31 is streaky shape from vertical view, concrete, to the region 11a of center to 20mm ± 2 of base material and the region 11c from the limit, opposite on this long limit to the center of base material 11 to 29mm ± 2 from the one side in two long limits of base material 11, for not implementing the region of roughening process.
Concrete, Figure 10 (a) is the SEM photo of region 31a, and Figure 10 (b) is the SEM photo in die-cut portion 115.Known with reference to Figure 10 (a) and Figure 10 (b), the roughening face 31 in region 31 still keeps roughened state, and in die-cut portion 115, the part major part of roughening is all damaged.This thinks, die-cut portion 115 causes roughening face 31 to be damaged because mould directly contacts, and the region of the roughening of region 31a, the region namely after etching, is be the lower region formed, position relative to region 11a and 11c.That is, by implementing roughening to a part for base material 11, even if apply punch process, roughening face 31 also can maintain the state of roughening.
Be explained above embodiments of the present invention and embodiment, but above-described execution mode and embodiment do not limit the invention involved by claim.In addition, whole combinations of the feature illustrated by it should be noted that in execution mode and embodiment are exactly not the necessary means solving problem of the present invention.
Claims (6)
1. a manufacture method for lead frame, it has:
Prepare the base material preparatory process of the base material be made up of metal material,
The mask process of mask parts is set in the region preset on the surface of described base material,
With described mask parts for mask, roughening process is implemented on the surface of described base material, formed only on the surface of base material with below region at least partially on utilize the mode of reel-to-reel and the roughening operation of base material after possessing the roughening process in roughening face
The mode after described roughening process, base material not directly being contacted with described roughening face with the mould of stamping machine implements the punch process operation of punching press process.
2. the manufacture method of lead frame as claimed in claim 1, in described roughening operation, the part on the described surface of described base material forms the described surface that is positioned at than described base material closer to the roughening face of the inner side of described base material.
3. the manufacture method of lead frame as claimed in claim 2, in described roughening operation, forms the described roughening face with the roughness larger than the roughness on the described surface of described base material.
4. the manufacture method of lead frame as claimed in claim 3, implements described mask process by the volume to volume electroplanting device arranging described mask parts on the described surface of described base material, in described volume to volume electroplanting device, implements described roughening operation.
5. the manufacture method of lead frame as claimed in claim 4, also has the conductive layer formation process forming conductive layer in the part on the surface of described base material.
6. the manufacture method of lead frame as claimed in claim 5, also has and described rolls is coiled into reel and prepares reel base material, after described punch process operation, rolls after the described roughening process implementing described punching press process be coiled into the rolling step of reel in described base material preparatory process.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009-116788 | 2009-05-13 | ||
| JP2009116788A JP4892033B2 (en) | 2009-05-13 | 2009-05-13 | Lead frame manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101887877A CN101887877A (en) | 2010-11-17 |
| CN101887877B true CN101887877B (en) | 2016-02-03 |
Family
ID=43073710
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910179516.6A Expired - Fee Related CN101887877B (en) | 2009-05-13 | 2009-10-12 | The manufacture method of lead frame |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP4892033B2 (en) |
| CN (1) | CN101887877B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5251991B2 (en) * | 2011-01-14 | 2013-07-31 | トヨタ自動車株式会社 | Semiconductor module |
| US9576884B2 (en) * | 2013-03-09 | 2017-02-21 | Adventive Ipbank | Low profile leaded semiconductor package |
| JP6142380B2 (en) * | 2014-05-08 | 2017-06-07 | Ｓｈマテリアル株式会社 | Lead frame and manufacturing method thereof |
| JP6686691B2 (en) * | 2016-05-16 | 2020-04-22 | 株式会社デンソー | Electronic device |
| JP6479265B2 (en) * | 2016-12-27 | 2019-03-06 | 古河電気工業株式会社 | Lead frame material, manufacturing method thereof, and semiconductor package |
| JP7449665B2 (en) | 2019-09-26 | 2024-03-14 | 株式会社Kanzacc | Metal strip and method for manufacturing the metal strip |
| JP7029504B2 (en) * | 2020-09-23 | 2022-03-03 | Ｓｈプレシジョン株式会社 | Manufacturing method of lead frame and power semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101164165A (en) * | 2005-04-26 | 2008-04-16 | 大日本印刷株式会社 | Circuit member, circuit member manufacturing method, semiconductor device and multilayer structure on circuit member surface |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60231349A (en) * | 1984-05-01 | 1985-11-16 | Toshiba Corp | Lead frame |
| JPS61263142A (en) * | 1985-05-15 | 1986-11-21 | Mitsui Haitetsuku:Kk | Lead frame |
| JP4208893B2 (en) * | 1997-02-27 | 2009-01-14 | 富士通マイクロエレクトロニクス株式会社 | Manufacturing method of semiconductor device |
| JP2006210958A (en) * | 1997-02-27 | 2006-08-10 | Fujitsu Ltd | Semiconductor device |
| SG76591A1 (en) * | 1999-02-27 | 2000-11-21 | Aem Tech Engineers Pte Ltd | Method for selective plating of a metal substrate using laser developed masking layer and apparatus for carrying out the method |
| JP4329678B2 (en) * | 2004-11-11 | 2009-09-09 | 株式会社デンソー | Manufacturing method of lead frame used in semiconductor device |
| JP2006147664A (en) * | 2004-11-16 | 2006-06-08 | Hitachi Ltd | Electronic device and molded component therefor |
| US20090146280A1 (en) * | 2005-11-28 | 2009-06-11 | Dai Nippon Printing Co., Ltd. | Circuit member, manufacturing method of the circuit member, and semiconductor device including the circuit member |
| JP4620584B2 (en) * | 2005-12-27 | 2011-01-26 | 大日本印刷株式会社 | Circuit member manufacturing method |
| JP2007287765A (en) * | 2006-04-13 | 2007-11-01 | Denso Corp | Resin-sealed semiconductor device |
| JP2008103455A (en) * | 2006-10-18 | 2008-05-01 | Nec Electronics Corp | Semiconductor device and method for manufacturing the semiconductor device |
-
2009
- 2009-05-13 JP JP2009116788A patent/JP4892033B2/en not_active Expired - Fee Related
- 2009-10-12 CN CN200910179516.6A patent/CN101887877B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101164165A (en) * | 2005-04-26 | 2008-04-16 | 大日本印刷株式会社 | Circuit member, circuit member manufacturing method, semiconductor device and multilayer structure on circuit member surface |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101887877A (en) | 2010-11-17 |
| JP2010267730A (en) | 2010-11-25 |
| JP4892033B2 (en) | 2012-03-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101887877B (en) | The manufacture method of lead frame | |
| JP4857594B2 (en) | Circuit member and method of manufacturing circuit member | |
| US20150318240A1 (en) | Aluminum clad copper structure of an electronic component package | |
| US8304294B2 (en) | Lead frame substrate and method of manufacturing the same | |
| JP2000031365A (en) | Lead frame with selective palladium plating | |
| EP1932175A2 (en) | Die pad for semiconductor packages | |
| JP6269887B2 (en) | Semiconductor device manufacturing method and lead frame manufacturing method | |
| US20110097851A1 (en) | Method of fabricating a package structure | |
| JP4670931B2 (en) | Lead frame | |
| US8125060B2 (en) | Electronic component with layered frame | |
| JP5678980B2 (en) | Circuit member manufacturing method | |
| US9653424B2 (en) | Semiconductor package with adhesive material pre-printed on the lead frame and chip, and its manufacturing method | |
| US11335570B2 (en) | Multirow gull-wing package for microelectronic devices | |
| JP4620584B2 (en) | Circuit member manufacturing method | |
| JPH03250756A (en) | Outer lead molding process of semiconductor element | |
| JP2007165692A (en) | Method for manufacturing electronic equipment | |
| JP5376540B2 (en) | Lead frame and semiconductor device | |
| JP2014146827A (en) | Surface lamination structure of circuit member | |
| US8947886B2 (en) | Electronic component | |
| US9978613B1 (en) | Method for making lead frames for integrated circuit packages | |
| JP5353954B2 (en) | Circuit member and semiconductor device | |
| US20110068457A1 (en) | Semiconductor package with adhesive material pre-printed on the lead frame and chip, and its manufacturing method | |
| JP6191664B2 (en) | Multifaceted body of semiconductor device and semiconductor device | |
| JP5299411B2 (en) | Lead frame manufacturing method | |
| JP3583403B2 (en) | LOC lead frame and method of manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C53 | Correction of patent for invention or patent application | ||
| CB02 | Change of applicant information |
Address after: Yamagata Prefecture, Japan Applicant after: Hitachi Cable Prec Co., Ltd. Address before: Yamagata Prefecture, Japan Applicant before: Hitachi Cable Precision Co., Ltd. |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: MAMORU MITA TO: ZHULI PRECISION WORK CO., LTD. |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170330 Address after: The road development processing zone Kaohsiung city Taiwan Chinese No. 24 Patentee after: Chang Wah Technology Co., Ltd. Address before: Yamagata Prefecture, Japan Patentee before: Hitachi Cable Prec Co., Ltd. |
|
| TR01 | Transfer of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160203 Termination date: 20171012 |