CN101882638A - Solar battery based on TCO (Transparent Conductive Oxide) film and bonding technique - Google Patents

Solar battery based on TCO (Transparent Conductive Oxide) film and bonding technique Download PDF

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CN101882638A
CN101882638A CN 201010196135 CN201010196135A CN101882638A CN 101882638 A CN101882638 A CN 101882638A CN 201010196135 CN201010196135 CN 201010196135 CN 201010196135 A CN201010196135 A CN 201010196135A CN 101882638 A CN101882638 A CN 101882638A
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tco
type material
material layer
layer
thin layer
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CN101882638B (en
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马绍栋
郑婉华
陈微
周文君
刘安金
彭红玲
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Institute of Semiconductors of CAS
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

The invention provides a solar battery based on a TCO (Transparent Conductive Oxide) film and a bonding technique, comprising a lower electrode, an N-type material layer, a first TCO film layer, a second TCO film layer, a P-type material layer and an upper graph electrode, wherein the N-type material layer is arranged on the lower electrode; the first TCO film layer is arranged on the N-type material layer; the second TCO film layer is bonded on the first TCO film layer; the P-type material layer is arranged on the second TCO film layer; and the upper graph electrode is arranged on the P-type material layer.

Description

Solar cell based on TCO film and bonding techniques
Technical field
The present invention relates to semiconductor photovoltaic device and technical field, relate in particular to a kind of solar cell based on TCO film and bonding techniques.
Background technology
Solar cell can directly be transformed into electric energy with solar energy, solves the energy crisis that the present whole world faces, the research emphasis that therefore structure is low-cost, high efficiency solar cell becomes domestic and international photovoltaic industry.The technical fields such as semiconductor solar cell extensive use space flight, military affairs, satellite, Landscape Lighting and household electricity that have single or multiple PN junction structures at present.
Solar cell has utilized the photovoltaic special efficacy of material to answer, and promptly device is exposed to the phenomenon of light generation of following time voltage.Solar cell commonly used at present is many to be made by semi-conducting material, adopts PN junction structure or Schottky barrier structure (comprising MIS and SIS battery structure).Single PN junction structure can realize high conversion rate, but the cell making process complexity, cost is higher; Solar cell making process is simple for Schottky barrier (comprising MIS and SIS structure), but conversion efficiency is lower, and range of application is less.Therefore, constructing the simple new construction high performance solar batteries of a kind of technology is its key that can be widely used.
Be to realize the high conversion efficiency of solar cell, all begin both at home and abroad to attempt adopting a plurality of knots to construct solar cell, be connected by tunnel junction or wafer bonding between knot and the knot, can effectively utilize solar spectrum like this, the raising battery efficiency.Document 1: " C.M.Fetzer; R.R.King, P.C.Colter, et al; J.Cryst.Growth 261 (2-3) (2004) 341-348 " and document 2: the multijunction solar cell of report has higher efficient in " R.R.King; D.C.Law, K.M.Edmondson, et al; Appl.Phys.Lett.90 (18) (2007) 183516:1-3 ", but its complex manufacturing, cost is higher, is difficult to extensive utilization; Document 3: " J.M.Zahler; K.Tanabe, C.Ladous, et al; Appl.Phys.Lett.91 (1) (2007) 012108:1-3 " and document 4: reported a kind of method of utilizing bonding techniques to make unijunction and binode battery in " M.J.Archer; D.C.Law, S.Mesropian, et al; Appl.Phys.Lett.92 (10) (2008) 103503:1-3 ", utilize this method can reduce material cost, but its complex manufacturing technology, improved efficiency is not obvious.Therefore, the semiconductor PN solar cell can't realize that low-cost high-efficiency produces on a large scale, also just can't obtain promoting.
Schottky barrier (comprising MIS and SIS battery structure) solar cell is because its simple technology is studied by people always, and the SIS battery became one of focus of research in recent years.Document 5: " V.M.Botnaryuk; L.V.Gorchak; et al, Tech.Phys.43 (5) (1998) 546-9 " and document 6: " O.Malik, F.J.De la Hidalga-W; et al; Journal of Non-Crystalline Solids 354 (2008) 2472-2477 " reported the SIS solar cell of the different semi-conducting materials that utilize the ITO making, and its technology is simple, is beneficial to production, but the single relatively PN junction of efficient is much lower, and this has limited its range of application.
In sum, two targets of solar cell research at present are to reduce cost and improve conversion efficiency, wherein reduce cost to comprise and use less, cheap material to realize power output of equal value and reduce battery production processing step and technology cost; Improve conversion efficiency and mainly be series connection by a plurality of different band gap knots more effectively to utilize solar spectrum.Therefore by means of the existing means of production, realize that with minimum cost maximum delivery efficiency is the future development trend of solar cell.
Summary of the invention
In view of this, main purpose of the present invention is to provide a kind of solar battery structure based on TCO film and bonding techniques, solve the high and low problem of transformation efficiency of present manufacture of solar cells cost, reach and reduce the production technology cost simultaneously and improve the battery delivery efficiency.
For achieving the above object, the invention provides a kind of solar cell based on TCO film and bonding techniques, comprising:
One bottom electrode;
One n type material layer, this n type material layer is produced on the bottom electrode;
One the one TCO thin layer, a TCO thin layer is produced on the n type material layer;
One the 2nd TCO thin layer, the 2nd TCO thin layer are bonded on the TCO thin layer;
One P-type material layer, this P-type material layer are produced on the 2nd TCO thin layer;
Pattern electrodes on one, pattern electrodes is produced on the P-type material layer on this.
Wherein the n type material layer is the different same material of thickness with the P-type material layer, or the foreign material of band gap reasonable combination.
Wherein n type material layer and P-type material layer are monocrystalline, polycrystalline or amorphous.
Wherein first, second TCO thin layer is the broad-band gap transparent conductive material.
Wherein the material of first, second TCO thin layer is SnO 2, In 2O 3Or ITO.
From technique scheme as can be seen, the present invention has following beneficial effect:
1, this high performance solar batteries provided by the invention based on TCO film and bonding techniques, owing to can form the strong type layer in Schottky barrier or the SIS structure up and down between two-layer heterotypic material and the TCO, and the excess electron that two layers of semi-conductor material produces under illumination is (n type material) motion downwards, the residue hole that produces is (P-type material) motion upwards, is to be cascaded so be equivalent to two batteries.When two sub-batteries produced identical photo-generated carrier under series connection up and down, this structure battery can obtain maximum delivery efficiency, and open circuit voltage is similar to the stack of two sub-cell voltages.Be that this kind structure battery has effectively utilized solar spectrum, improved output voltage.
2, this high performance solar batteries provided by the invention based on TCO film and bonding techniques, two layers of semi-conductor material can be a same material, be specially adapted to indirect bandgap material, as the Si material, choose reasonable upper layer of material thickness, make it effectively absorb the photo-generated carrier that produces after the short wavelength photons and be equivalent to the photo-generated carrier that produces after the subsurface material absorption long wavelength photons, then this battery can be realized maximum conversion efficiency.
3, this high performance solar batteries based on TCO film and bonding techniques provided by the invention can be selected different material and growth technique according to the requirement of TCO film, so that sub-battery and the maximum potential barrier of formation between it; Semi-conducting material also can be selected monocrystalline, polycrystalline or amorphous as requested.
Description of drawings
For further specifying technology contents of the present invention, below in conjunction with execution mode and accompanying drawing describes in detail as after, wherein:
Fig. 1 is the high performance solar batteries vertical section structural representation based on TCO film and bonding techniques provided by the invention; In the middle of the wherein two-layer semiconductor is the TCO film, and the film dashed middle line is represented bonded interface, and the strip electrode that powers on after very optimizing need guarantee effective light-receiving area of battery and lower contact resistance simultaneously, also can adopt transparency electrode in the part battery structure.
Fig. 2 is the high performance solar batteries production craft step schematic diagram based on TCO film and bonding techniques provided by the invention.
Fig. 3 is the high performance solar batteries band structure figure of example structure with semi-conducting material Si for the present invention; Wherein Fig. 3 (a) is that the energy level of ITO and P type, N type silicon distributes, and Fig. 3 (b) can be with distribution map for this structure solar cell.
Fig. 4 is the high performance solar batteries band structure figure of example structure with P type GaAs and N type Si for the present invention.
Embodiment
As shown in Figure 1, the invention provides a kind of solar cell, comprising based on TCO film and bonding techniques:
One bottom electrode 10;
One n type material layer 20, this n type material layer 20 is produced on the bottom electrode 10;
One the one TCO thin layer, 30, the one TCO thin layers 30 are produced on the n type material layer 20;
One the 2nd TCO thin layer, 40, the two TCO thin layers 40 are bonded on the TCO thin layer 30;
Described first, second TCO thin layer the 30, the 40th, the broad-band gap transparent conductive material, the material of this first, second TCO thin layer 30,40 is SnO 2, In 2O 3Or ITO;
One P-type material layer 50, this P-type material layer 50 are produced on the 2nd TCO thin layer 40;
Described this n type material layer 20 is the different same material of thickness with P-type material layer 50, or the foreign material of band gap reasonable combination, and this n type material layer 20 and P-type material layer 50 are monocrystalline, polycrystalline or amorphous;
Pattern electrodes 60 on one, and pattern electrodes 60 is produced on the P-type material layer 50 on this.
Again as shown in Figure 1, this solar cell comprises n type material layer 20, P-type material layer 50 and a TCO thin layer 30, the 2nd TCO thin layer 40; Wherein, described n type material layer 20, P-type material layer 50 can adopt same material, also can adopt the foreign material with different band gap, as P-InP and N-Si, P-GaN and N-GaAs etc.; A described TCO thin layer 30, the 2nd TCO thin layer 40 are grown in respectively on two shaped body materials, utilize wafer bonding structure monolithic solar cell then.
Above-mentioned n type material layer 20 and P-type material layer 50 can be monocrystalline, polycrystalline or amorphous semiconductor material.
An above-mentioned TCO thin layer 30 and the 2nd TCO thin layer 40 are broad-band gap transparent conductive materials, as SnO 2, In 2O 3Or ITO etc.
An above-mentioned TCO thin layer 30 and the 2nd TCO thin layer 40 are deposited on respectively on the two-layer special-shaped semi-conducting material, TCO and semi-conducting material form higher Schottky barrier, perhaps, be configured to the SIS battery structure by rational doping and surface oxidation to semi-conducting material.
Two chip semiconductor materials behind above-mentioned deposition the one TCO thin layer 30 and the 2nd TCO thin layer 40, after surface treatment, construct single chip architecture by bonding techniques, last upper and lower surface is done pattern electrodes 60 and bottom electrode 10 respectively, forms simple high performance solar batteries.
As shown in Figure 2, Fig. 2 is the high performance solar batteries manufacturing process steps schematic diagram based on TCO film and bonding techniques provided by the invention.Wherein with the upper layer of material of P-type material layer 50 as solar cell, general its material band gap is big (greater than the subsurface material band gap), if and the n type material layer 20 of lower floor be same material, then must optimize its thickness, mainly can be by body material attenuate or the realization of bonding post-etching.In order to realize that higher potential barrier is arranged between semi-conducting material and the TCO, generally also need semiconductor material surface is done certain processing, carry out Passivation Treatment to reduce surface state in the oxide layer on its superficial growth ten Izod right sides or to semiconductor material surface during as employing Si material.The one TCO thin layer 30 of being grown and the control of the 2nd TCO thin layer 40 carrier concentrations need to satisfy the conduction needs, generally are about 10 21Cm 3, Fermi level is positioned at conduction band, and than high 0.6eV at the bottom of the conduction band, work function is about 4.5-4.8eV approximately; For definite film thickness also need be considered its antireflection characteristic, promptly the gross thickness of TCO thin layer 30 behind the bonding and the 2nd TCO thin layer 40 plays the antireflective effect to the light of certain fixed wave length of lower floor's battery absorption.Make two layers of material become single chip architecture by bonding techniques, can bear certain mechanical external force and variations in temperature, be beneficial to the realization of subsequent technique, must guarantee two in addition between good conducting.For the bonded interface that obtains, generally need carry out clean or other improvement technology to the TCO surface.
According to Fig. 1 and Fig. 2 described this high performance solar batteries structure and technology, the high performance solar batteries based on TCO film and bonding techniques provided by the invention is further described below in conjunction with specific embodiment based on TCO film and bonding techniques.
Embodiment one
P-type material layer 20 and n type material layer 50 are single crystalline Si in this example, and its band gap is 1.12eV.Wherein P type silicon is positioned at the battery upper strata, and thickness is generally less than 100 microns, mainly absorbs short wavelength photons; N type silicon is positioned at battery lower floor, and thickness is about 300 microns, can absorb the long wavelength photons through upper strata silicon, and battery bottom does not need to carry out the absorption fully that any processing just can realize photon.First, second TCO thin layer 30,40 is elected ITO as, and every layer thickness is about 80nm, in order to obtain higher potential barrier between ITO and Si, generally silicon face is carried out oxidation processes, as thermal oxidation or H 2O 2Soak, oxidated layer thickness is the ten Izod right sides.Can form the strong inversion layer at silicon face after above-mentioned processing, barrier height can be improved greatly, and sub-battery can be thought SIS structure battery before two bondings.Battery can be in upper surface coating anti reflection coating to increase the absorption of light behind the bonding.For collection efficiency that improves charge carrier and the desirable ohmic contact that realizes going up pattern electrodes 60 and bottom electrode 10 and Si, can carry out heavy doping on the Si surface that contacts with electrode up and down.
Above-mentioned battery structure energy band diagram as shown in Figure 3, wherein Fig. 3 (a) be ITO and P-Si, N-Si with respect to the energy level distribution map of vacuum, if the ITO Fermi level is in Si band gap middle position, then can form best Schottky barrier with N type, P type silicon in theory; Fig. 3 (b) is the energy band diagram of this structure battery, and P type Si can be with and be bent downwardly, and excess electron moves right; N type Si can be with and be bent upwards, and the residue hole is equivalent to two SIS battery series connection to left movement.When the collected photo-generated carrier of the SIS battery of constructing as the SIS battery of upper strata P-Si structure and the N-Si of lower floor is identical, can realize the delivery efficiency of this structure battery maximum, its open circuit voltage approximates two sub-battery open circuit voltage sums.
Embodiment two
P-type material layer 20 and n type material layer 50 are respectively monocrystalline GaAs and single crystalline Si in this example.The GaAs band gap is positioned at the battery upper strata greater than Si, absorbs the photon greater than its band gap, and its thickness only needs several microns, and because it has bigger electron affinity, need also can not form higher Schottky barrier with ITO by insulating barrier.Other structures are similar to Example 1, and concrete battery energy band diagram can be with reference to accompanying drawing 4.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (5)

1. solar cell based on TCO film and bonding techniques comprises:
One bottom electrode;
One n type material layer, this n type material layer is produced on the bottom electrode;
One the one TCO thin layer, a TCO thin layer is produced on the n type material layer;
One the 2nd TCO thin layer, the 2nd TCO thin layer are bonded on the TCO thin layer;
One P-type material layer, this P-type material layer are produced on the 2nd TCO thin layer;
Pattern electrodes on one, pattern electrodes is produced on the P-type material layer on this.
2. the solar cell based on TCO film and bonding techniques according to claim 1, wherein the n type material layer is the different same material of thickness with the P-type material layer, or the foreign material of band gap reasonable combination.
3. the solar cell based on TCO film and bonding techniques according to claim 1 and 2, wherein n type material layer and P-type material layer are monocrystalline, polycrystalline or amorphous.
4. the solar cell based on TCO film and bonding techniques according to claim 1, wherein first, second TCO thin layer is the broad-band gap transparent conductive material.
5. according to claim 1 or 4 described solar cells based on TCO film and bonding techniques, wherein the material of first, second TCO thin layer is SnO 2, In 2O 3Or ITO.
CN 201010196135 2010-06-02 2010-06-02 Solar battery based on TCO (Transparent Conductive Oxide) film and bonding technique Active CN101882638B (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110120435A (en) * 2018-02-07 2019-08-13 中国科学院苏州纳米技术与纳米仿生研究所 Multijunction solar cell and preparation method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110120435A (en) * 2018-02-07 2019-08-13 中国科学院苏州纳米技术与纳米仿生研究所 Multijunction solar cell and preparation method thereof

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Inventor after: Zheng Wanhua

Inventor after: Ma Shaodong

Inventor after: Chen Wei

Inventor after: Zhou Wenjun

Inventor after: Liu Anjin

Inventor after: Peng Hongling

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