CN206148438U - Crystalline silicon solar cell based on siNiOx heterojunction - Google Patents
Crystalline silicon solar cell based on siNiOx heterojunction Download PDFInfo
- Publication number
- CN206148438U CN206148438U CN201621054524.XU CN201621054524U CN206148438U CN 206148438 U CN206148438 U CN 206148438U CN 201621054524 U CN201621054524 U CN 201621054524U CN 206148438 U CN206148438 U CN 206148438U
- Authority
- CN
- China
- Prior art keywords
- layer
- solar cell
- silicon
- electrode
- silicon solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The utility model provides a crystalline silicon solar cell based on siNiOx heterojunction, includes preceding electrode, niOx layer, crystalline silica absorbed layer, back of the body electric field, back electrode. Its structure begins to do in proper order from light facing surface: preceding electrode, niOx layer, crystalline silica absorbed layer, back of the body electric field, back electrode. This structure can effectively reduce the inside photocarrier's of solar battery complex, improves solar battery photoelectric conversion efficiency. This crystalline silica heterojunction battery can use has had crystalline silicon solar cell production facility preparation back of the body electric field, but its two -sidedly advances photo structure make full use of sunlight resource, increases the actual generated energy of photovoltaic module.
Description
Technical field
This utility model belongs to solar cell field, falls within field of semiconductor devices, is related to the structure of silicon solar cell.
Background technology
Silicon rich reserves on earth, and the optical band gap of silicon more matched with solar spectrum, prepares solar cell
One of ideal material.Due to the technology of preparing comparative maturity of the purification technique and silicon semiconductor device of silicon materials, crystalline silicon is too
Positive electricity pond occupies most of share of current solar cell total output.However, with the progress of technique, based on homogeneity junction structure
Crystal-silicon solar cell its photoelectric transformation efficiency gradually approached the limit.And heterojunction solar battery can make full use of two kinds
The difference of work function and position of energy band between different quasiconductors, can improve solar cell in the case where short circuit current is not reduced
Open-circuit voltage, so as to improve the photoelectric transformation efficiency of solar cell.Therefore, it is expected to based on the crystal-silicon solar cell of hetero-junctions
In the following further lifting for obtaining photoelectric transformation efficiency.
To improve the conversion efficiency of solar cell, it is necessary to which as much as possible inside reduction solar cell, photo-generated carrier answers
Close.And in heterojunction solar battery, as two kinds of semiconductor material lattice constants for constituting hetero-junctions have differences, hetero-junctions
Interface often existing defects state and cause photo-generated carrier to be combined at heterojunction boundary in a large number.Therefore, in the hetero-junctions sun
In the design of battery, it is necessary to take measures to suppress Interface composites.
In heterojunction solar battery, the use of selective contact be considered as reduce Interface composites effective measures it
One.So-called selective contact, is the difference or half for utilizing conduction band and valence band location between the semi-conducting material for forming hetero-junctions
The band curvature of conductor, forms the potential barrier to minority carrier in heterojunction boundary.Under the influence of the potential barrier for being formed,
Minority carrier to selective contact transport be prevented from but majority carrier transport it is unaffected.Therefore, minority carrier
Son is prevented near interfacial state, so as to suppress which to form compound with majority carrier Jing surface defect states.Meanwhile, heterojunction boundary
The potential barrier to minority carrier that place is formed can effectively reduce dark current, improve open-circuit voltage.On the other hand, to most current-carrying
For son, as its transmission is not significantly affected, therefore short-circuit current density can't reduce.
Utility model content
The purpose of this utility model is to propose one kind based on Si/NiOxThe crystal-silicon solar cell of hetero-junctions.
This utility model is achieved through the following technical solutions.
It is described in the utility model a kind of based on Si/NiOxThe crystal-silicon solar cell of hetero-junctions, including front electrode, NiOx
Layer, crystalline silicon absorbed layer, back of the body electric field, back electrode.Its structure starts to be followed successively by from side to light：Front electrode, NiOxLayer, crystalline silicon are inhaled
Receive layer, back of the body electric field, back electrode.
Described NiOxLayer adulterates for p-type.
Described crystalline silicon absorbed layer is that N-shaped or p-type are adulterated.
Described back of the body electric field is used but is not limited to following three kinds of forms：N-shaped doped layer adds silicon nitride passivation, or intrinsic
Amorphous silicon passivation layer adds N-shaped non-crystalline silicon heavily doped layer, or the TiO of N-shaped dopingxLayer.
Described front electrode package contains transparency conducting layer and metal gate-shaped electrode.
Described back electrode includes transparency conducting layer and metal gate-shaped electrode, or only includes metal gate-shaped electrode.
NiO of this utility model using p-type dopingxHetero-junctions is formed with crystalline silicon and is applied in solar cell.
NiOxIt is a kind of transition metal oxide quasiconductor, optical band gap is about 3eV.NiOxElectron affinity energy it is less（About-
2.1eV）, therefore its conduction band is often higher than the conduction band of other semi-conducting materials, can answer as the selective contact material to hole
In perovskite solar cell.Compared with silicon, NiOxConduction band positions far above silicon conduction band positions（~2eV）, and valence band position
Put the valence band location of slightly below silicon（<0.3eV）.Therefore, if the NiO of p-type dopingxHetero-junctions is formed with silicon, conduction band is in hetero-junctions
The barrier potential difference of interface can prevent light induced electron near heterojunction boundary.Although valence band can also form the gesture to hole in interface
Build, but as barrier energy is less, the transmission of photohole will not be made a significant impact.And, the potential barrier of interface valence band
Difference can make silicon produce bending in the valence band at heterojunction boundary, be conducive to the raising of open-circuit voltage.
The Si/NiO proposed by this utility modelxHeterojunction solar battery can use different back of the body electric fields, such as by diffusion work
N-type silicon doped layer prepared by skill, or intrinsic amorphous silicon passivation layer and N-shaped non-crystalline silicon heavily doped layer, or the TiO of N-shaped dopingxLayer.
The back of the body electric field of various ways can make full use of existing crystal-silicon solar cell production equipment, it is to avoid the overlapping investment to equipment.
In addition, the crystal silicon heterojunction solar battery that proposed of this utility model for it is two-sided enter photo structure, sunlight can be made full use of to provide
Source, improves photovoltaic module actual power generation.
This utility model proposed based on Si/NiOxThe crystal-silicon solar cell of hetero-junctions, can effectively reduce the sun
Inside battery photo-generated carrier it is compound, so as to improve its photoelectric transformation efficiency.It is silicon/crystalline silicon heterogenous that this utility model is proposed
The back of the body electric field structure of junction battery can make full use of existing crystal-silicon solar cell production equipment to be produced, and reduce equipment side
The input in face.In addition, the silicon/crystalline silicon heterogenous junction battery that proposed of this utility model using it is two-sided enter photo structure, can more fully profit
With sunlight, increase photovoltaic module actual power generation.
Description of the drawings
Accompanying drawing 1 is solar battery structure schematic diagram of the present utility model.
Specific embodiment
This utility model will be described further by following examples.
Embodiment 1.
（1）Silicon chip is tentatively cleaned, two-sided making herbs into wool.
（2）Back side N-shaped doped layer is prepared using diffusion technique.
（3）Backside deposition silicon nitride or alumina passivation layer, subsequently prepare palisade Ag electrodes.
（4）Secondary cleaning is carried out to front side of silicon wafer.
（5）NiO is prepared using ald in front side of silicon waferxLayer.
（6）Deposition transparent conductive layer and Ag metal grid lines, electrode before preparing.
Embodiment 2.
（1）Silicon chip is tentatively cleaned, two-sided making herbs into wool.
（2）Remove silicon chip surface oxide layer with Fluohydric acid., non-crystalline silicon is prepared using plasma reinforced chemical vapour deposition blunt
Change layer and N-shaped heavily doped amorphous silicon emitter stage.
（3）Deposition ITO deposits Ag metal grid lines, prepares back electrode as transparency conducting layer.
（4）Silicon chip is inverted, and prepares NiO using chemical vapor depositionxLayer.
（5）Deposition ITO deposits Ag metal grid lines as transparency conducting layer, electrode before preparing.
Embodiment 3.
（1）Silicon chip is tentatively cleaned, two-sided making herbs into wool.
（2）NiO is deposited using evaporation technologyxLayer.
（3）Deposition AZO is used as transparency conducting layer, depositing Cu metal grid line, electrode before preparing.
（4）Silicon chip is sent out and is turned, and prepares TiO using aldxLayer.
（5）Deposition transparent conductive layer and Ag metal grid lines, prepare back electrode.
Claims (6)
1. it is a kind of to be based on Si/NiOxThe crystal-silicon solar cell of hetero-junctions, is characterized in that including front electrode, NiOxLayer, crystalline silicon are inhaled
Receive layer, back of the body electric field, back electrode；Its structure starts to be followed successively by from side to light：Front electrode, NiOxLayer, crystalline silicon absorbed layer, back of the body electricity
Field, back electrode.
2. crystal-silicon solar cell according to claim 1, is characterized in that described NiOxLayer adulterates for p-type.
3. crystal-silicon solar cell according to claim 1, is characterized in that described crystalline silicon absorbed layer is N-shaped or p-type
Doping.
4. crystal-silicon solar cell according to claim 1, is characterized in that described back of the body electric field is following three kinds of forms：n
Type doped layer adds silicon nitride passivation, or intrinsic amorphous silicon passivation layer adds N-shaped non-crystalline silicon heavily doped layer, or N-shaped doping
TiOxLayer.
5. crystal-silicon solar cell according to claim 1, it is characterized in that described front electrode package containing transparency conducting layer and
Metal gate-shaped electrode.
6. crystal-silicon solar cell according to claim 1, is characterized in that described back electrode is transparency conducting layer and gold
Category gate-shaped electrode, or metal gate-shaped electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621054524.XU CN206148438U (en) | 2016-09-14 | 2016-09-14 | Crystalline silicon solar cell based on siNiOx heterojunction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621054524.XU CN206148438U (en) | 2016-09-14 | 2016-09-14 | Crystalline silicon solar cell based on siNiOx heterojunction |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206148438U true CN206148438U (en) | 2017-05-03 |
Family
ID=58618438
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621054524.XU Expired - Fee Related CN206148438U (en) | 2016-09-14 | 2016-09-14 | Crystalline silicon solar cell based on siNiOx heterojunction |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206148438U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110444611A (en) * | 2019-07-09 | 2019-11-12 | 浙江师范大学 | A kind of solar battery and preparation method thereof of oxide passivation contact |
-
2016
- 2016-09-14 CN CN201621054524.XU patent/CN206148438U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110444611A (en) * | 2019-07-09 | 2019-11-12 | 浙江师范大学 | A kind of solar battery and preparation method thereof of oxide passivation contact |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101000064B1 (en) | Hetero-junction silicon solar cell and fabrication method thereof | |
| CN206271715U (en) | A kind of crystal silicon heterojunction solar battery | |
| KR101103770B1 (en) | Compound Semiconductor Solar Cells and Methods of Fabricating the Same | |
| US11961930B2 (en) | Crystalline silicon solar cell and preparation method therefor, and photovoltaic assembly | |
| WO2022134991A1 (en) | Solar cell and production method, and photovoltaic module | |
| CN106449845B (en) | One kind is based on Si/TiOxThe two-sided crystal-silicon solar cell of hetero-junctions | |
| CN106252430B (en) | A kind of crystal silicon heterojunction solar battery | |
| KR101612133B1 (en) | Metal Wrap Through type solar cell and method for fabricating the same | |
| Sui et al. | A review of technologies for high efficiency silicon solar cells | |
| CN108461554A (en) | Full back-contact heterojunction solar battery and preparation method thereof | |
| CN102214720B (en) | Back contact heterojunction solar battery based on P-type silicon slice | |
| US20120055542A1 (en) | Photovoltaic cell | |
| CN106449850A (en) | High efficiency silicon-based heterojunction double-sided battery and its preparation method | |
| CN206148438U (en) | Crystalline silicon solar cell based on siNiOx heterojunction | |
| KR20160085121A (en) | Solar cell | |
| CN102157596B (en) | Barrier type silicon-based thin film semi-laminated solar cell | |
| CN106298983A (en) | A kind of based on Si/NiOxthe crystal-silicon solar cell of hetero-junctions | |
| CN206271724U (en) | A kind of two-sided crystal-silicon solar cell based on Si/TiOx hetero-junctions | |
| KR20120122002A (en) | Hetero-Junction Solar Cell | |
| KR101363103B1 (en) | Solar cell and method of manufacturing the same | |
| CN101866969A (en) | Solar cell | |
| KR20100096747A (en) | Solar cell and method for manufacturing thereof | |
| CN110212060A (en) | A kind of battery preparation method, battery, battery component and solar powered station | |
| CN101882638B (en) | Solar battery based on TCO (Transparent Conductive Oxide) film and bonding technique | |
| CN218849510U (en) | N-type monocrystalline silicon HBC solar cell structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170503 Termination date: 20170914 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |