CN1018779B - Bipolar and cmos transistor - Google Patents

Abstract

A bipolar and CMOS transistor is provided. A mask, a graphics, and a feeding are integrated to decrease complexity, and form PMOS and NMOS grid electrode conductors and layering polysilicon of bipolar emitting electrode structure. The polysilicon is heavily doped to form MOS transistor grid electrode and another area with high impurity concentration, and subsequently the area will be spread to the bipolar base area. The contact band of a collecting electrode, a base electrode, an emitting electrode of the bipolar transistor, and a grid electrode, a source electrode, a leakage electrode of the MOS transistor can be manufactured into a transistor with small area and high performance. The requirements of electrode metal graphics alignment can be decreased.

Description

Bipolar and CMOS transistor

Relate generally to semiconductor structure of the present invention and manufacturing technology thereof are more specifically to the bipolar semiconductor transistor.

Field-effect transistor (FET) technology is particularly suitable for high density, low-power circuit.People more and more pay attention to utilizing field effect crystal tube fabrication techniques large scale integrated circuit at present, because this technology can have the circuit of complex logic function and big memory with the high finished product rate manufacturing.Field-effect transistor structure is made of P-channel field-effect transistor (PEFT) transistor (PMOS) and N slot field-effect transistor (NMOS), PMOS and nmos pass transistor device combine and form complementary metal oxide semiconductors (CMOS) (CMOS) circuit, and it has the performance more more superior than the device of single type.

Along with the increase of circuit complexity and integrated level, the speed of field effect transistor circuitry can be owing to capacitive load reduces, and this point is particularly evident to the field-effect transistor output device, because device must produce suitable drive current to other circuit.A kind of approach that improves the FET device driveability is the width that increases its conducting channel, and, thing followed shortcoming is that this device needs bigger area, and this has just hindered the ability of putting into a large amount of devices on a less area.The another kind of approach that improves the speed characteristics of the circuit that adopts FET device is to make driving element with bipolar transistor, the characteristics of bipolar transistor are to have very high mutual conductance (mutual conductance), thereby capacitive load is had the fast rise time that good driveability can guarantee to obtain high-gain and drive signal.

The binding energy of bipolar device and fieldtron improves the speed characteristics of circuit, and this is that those skilled in the art know.The base stage of traditional making bipolar transistor, the step of emitter and collector is different with the source electrode of making cmos device, the step of drain and gate.Therefore when needs combine bipolar device and cmos circuit, just need that dividing comes forms bipolar device and cmos device with different making steps.Usually, between the manufacture craft of ambipolar and CMOS, seldom interosculate (general character), can infer, by these approach, though the ambipolar and various advantages cmos device combination can realize, be that complicated manufacture craft is a cost to have many steps.When semiconductor fabrication process was improved with the way that increases manufacturing process, the rate of finished products of product can descend and be exactly what one expected.

Though nearest progress has made ambipolar and technology cmos device comparatively approaching, but still need can make manufacturing process and device incorporate more more improved ambipolar/CMOS technology.In addition, also need with the design of the CMOS transistor circuit bipolar transistor layout compatible mutually with making.Therefore, the objective of the invention is to propose a kind of design with the CMOS transistor circuit and make compatible mutually bipolar transistor.

According to the present invention, disclosed a kind of ambipolar and technology CMOS integrated device of making, here the technology that is disclosed reduces or has eliminated basically the shortcoming and defect part of existing manufacturing technology, according to the present invention, the making step that forms MOS transistor is compatible mutually with the step that forms bipolar transistor, and combine, thereby simplified manufacture craft.

In the example that forms ambipolar and CMOS integrated device, adjacent N-type and P-type buried layer form on a semiconductor chip, and these buried layers have determined to form the position of superincumbent semiconductor pond or well.N-type buried layer has reduced the polyphone collector resistance of vertical NPN bipolar transistor.And buried layer makes sub horizontal resistance reduce, thereby has reduced adjacent PMOS and the latch phenomenon between the nmos pass transistor effectively.

On buried layer, form the epitaxial loayer of the thin semi-conducting material of one deck, and imbed selectively,, on N-type buried layer, form lightly doped N-type pond (well) so that on P-type buried layer, form lightly doped P-type pond (well).On epitaxial thin layer, make figure, ambipolar to determine formation, the zone of PMOS and nmos pass transistor moat, with raceway groove obstruction injection and thick field oxide each moat zone is separated each other, on the moat zone, form a thin layer of silicon dioxide that comprises the gate oxide of field-effect transistor, then, deposition one deck polysilicon thin layer on the whole surface of wafer, figure is sheltered and made to this substrate to inject the base region of bipolar transistor, subsequently, gate oxide thin layer and polysilicon thin layer are carried out graphic making, so that form the perforate in definite multi-emitter zone in ambipolar moat, the position of the emitter region of NPN bipolar transistor is determined in the perforate in comprehensive silicon oxide and the polysilicon layer in the base region that had injected.

Then, the whole surface of thicker second layer polysilicon deposition at substrate, and by injecting polysilicon is carried out heavy doping, this second layer polysilicon merges mutually with one deck polysilicon that covers on the gate oxide that before deposits.And in ambipolar moat zone, the P-type base stage of second layer polysilicon contact in emitter contact perforate injects silicon, and the thin oxide layer above the ambipolar here base region is removed.This class emitter is called the nested type multi-emitter.Remove in the polysilicon that merges on-chip these zones after handle, and those form except the zone in CMOS transistor gate polar conductors and ambipolar polysilicon emitter district.Heavily doped thick polysilicon forms the multi-emitter structure of corresponding N MOS and transistorized grid lead of PMOS and bipolar transistor, then, whole surface deposition one deck Si oxide of the wafer after processing, and anisotropically be etched with and form an oxide side walls layer that surrounds the insulation of polysilicon gate and emitter structure, then this wafer is carried out graphic making with definite nmos device moat zone, and inject N type impurity to form source electrode and drain region.

Similarly, this wafer is carried out the moat zone of graphic making with definite PMOS and bipolar device, and inject p type impurity, form transistorized source electrode of PMOS and drain region thus, in this step, also around the ambipolar moat that centers on multi-emitter, form P fundamental mode utmost point contact area simultaneously.

At this moment, silicon and the polysilicon that exposes carried out clean, to remove the oxide of any remnants, but do not comprise the polysilicon sidewall oxide layer, it then is titanium deposition on wafer, and under blanket of nitrogen, react the silicide that makes at titanium and the contacted zone formation of silicon titanium, at other local nitride that forms titanium.The nitride of titanium is made figure and is etched with formation local interlinkage band, these bands will be connected to final metallization the silicide moat zone of the titanium of MOS and bipolar transistor, the conduction contact area of some MOS and bipolar transistor is in field oxide region, rather than form on the moat zone, the Metal Contact that the titanium nitride band of making figure on following formation and covering field oxide contacts.Like this, thus this intermetallic receive the silicide moat of titanium in succession and be connected to field effect and bipolar transistor.The advantage of this technology is to make the transistor of small size, thereby makes the resistance in field effect and bipolar transistor moat zone and electric capacity reduce to minimum, field effect that formation speed is higher and bipolar transistor.Then, form the metallization pattern of transistor electrodes by the figure perforate in the passivation insulation.

Above-mentioned manufacture craft also can be used for forming the wall shape emitter structure of bipolar transistor.When forming this wall shape emitter, the polysilicon emitter of emitter contacts with transition region between field oxide and the moat, and the N+ emitter region extends or cover the edge of moat between the edge of moat.

The more specifically description that most preferred embodiment of the present invention is done will make other characteristics of the present invention and advantage become more obvious with reference to the accompanying drawings, among each figure, and same element, zone or intervally represent with identical numbering, wherein,

Fig. 1～12 are sectional views of a wafer, are used for being illustrated in the isolation that forms ambipolar and CMOS transistor each semiconductor regions before and form step;

Figure 13～25 explanations ambipolar and transistorized integrated manufacturing process of CMOS in corresponding semiconductor regions;

The semiconductor chip sectional view of Figure 26 is represented the layout and the structure of ambipolar and CMOS integrated device among Figure 25;

Figure 27 and 28 is respectively sectional view and vertical view, and the layout of integrated bipolar device is described, its collector electrode is formed near base stage and the nested emitter region;

Figure 29 and 30 is respectively the sectional view and the vertical view of the another kind of layout of integrated nested emitter bipolar structure, and this structure has the wiring that is connected to the bipolar transistor collector electrode far away of being separated by;

Figure 31 and 32 is respectively the sectional view and the vertical view of the another kind of face office of integrated bipolar structure, and this structure provides two collector electrodes contacts for bipolar transistor;

Figure 33～35th, a kind of sectional view and vertical view with small size wall shape emitter transistor npn npn of symmetric configuration;

Figure 36 is a kind of sectional view that two small size wall shapes of pitching the symmetric configuration of the base stage contact of offing normal are launched bipolar transistor that has;

Figure 37 and 38 is respectively a kind of sectional view and vertical view of small size bipolar transistor, and this transistor has wall shape emitter, and its layout is asymmetric line, and layout is asymmetric;

Figure 39 and 40 is respectively a kind of sectional view and vertical view of wall shape emission polar form bipolar transistor, and this transistor has emitter far away and base stage wiring, and layout is asymmetric;

Figure 41 and 42 is respectively a kind of sectional view and vertical view of bipolar transistor, and this transistor has the nested emitter, and the double-basis utmost point contacts with two collector electrodes;

Figure 43 is the sectional view according to a kind of lateral PNP bipolar transistor of the present invention's making.

Be described in detail below and make vertical-type NPN bipolar transistor and PMOS, nmos pass transistor to form a kind of integrated step in conjunction with ambipolar and CMOS structure.The transistor of lateral PNP bipolar transistor and other modification also is described simultaneously.Bipolar transistor is known the method for cooperating together in the prior art with the CMOS transistor, therefore, to no longer illustrate in order to the concrete connected mode that forms circuit between them, those skilled in the art adopts the content here can make integrated ambipolar and CMOS transistor of the present invention easily and effectively and carries out the interconnection of internal electrode, finishes the circuit of required function with formation.Term " MOS " (metal-oxide semiconductor (MOS)) word is in this manual in order to represent a based semiconductor device, not to be meant to comprise the concrete device of metal gates lead and oxide-insulator.

Referring now to accompanying drawing 1,, the P-type substrate (10) of the formation base material that drawn here will form a bipolar transistor thereon and the CMOS transistor is right.Substrate (10) can be the P-N-type semiconductor N material in 6～10 ohmcms or 40～60 ohmcm scopes, and the semiconductor substrate materials of (100) lattice dot matrix orientation is best, but material that also can enough other orientations.Substrate (10) is exposed in about 900 degrees centigrade moist oxygen atmosphere, forms a silicon dioxide (SiO ₂) layer (12), being commonly referred to silica, one section time enough of this one deck (12) growth is to form about 500～600 Oxide.

Go up deposition one deck silicon nitride (Si at silicon oxide layer (12) ₃N ₄) (14), its thickness is about 1300～1500

, this one deck silicon nitride (14) is to deposit with traditional low pressure chemical vapor deposition techniques.Then photoresist mask layer (16) is coated with or additive method is coated on the silicon nitride (14) with throwing, go up the making figure to form zone (18) and (20) at mask layer (16), N+ buried layer that zone (18) and (20) is determined then will make is in on-chip position.

The figure of mask layer (16) photo anti-corrosion agent material is to realize by removing photo anti-corrosion agent material in selected zone (18) and (20).The silicon nitride layer (14) that exposes is with known plasma nitride etch process etching.After nitride was removed from selected zone (18) and (20), the surf zone that following one deck silica (12) is come out cleaned, to remove the residual deposit or the residue of nitration case (14) and oxide (12).

Subsequently, wafer is carried out ion inject, the zone that ion injects is shown in Fig. 2 arrow (24), to form N+ semiconductor regions (26) and (28), ion injects (impurity) (24) and is compelled to by thin layer of silicon oxide (12), and used is that dosage is 2 * 10 ¹⁵Individual ion/square centimeter-5 * 10 ¹⁵Antimony element between individual ion/square centimeter scope can obtain about 1.0 * 10 like this ¹⁹The antimony element peak concentration of individual atom/cubic centimetre.Ion is infused under about 40Kev and carries out, to obtain desirable implantation concentration.Fig. 2 explanation forms N+ buried layer (26) and (28) substrate (10) afterwards through implantation step.Substrate (10) was heated to more than 1100 degrees centigrade about 1 hour then, goed deep into substrate to order about impurity, and repaired owing to inject the infringement of the plane of crystal that causes.Substrate (10) heated by the pointed time, with formation N+ buried region (26) and (28), and about 2.5 microns of the degree of depth, photoresist layer (16) can be removed or peel off in the making step process, makes it without undergoing high temperature.

The sectional view of substrate that Fig. 3 described, the N+ buried layer (26) wherein and the surperficial position of (28) are oxidized to form thick silicon oxide layer (32) and (34) thereon, and this oxide layer grows is to about 5000～7000

Thickness be best, it be that later P-type impurity injects and forms mask, the corresponding P-buried layer of this P-type impurity injection formation that thick oxidation forms thing (32) and (34).

Silicon nitride layer (14) (Fig. 2) is removed, and exposes following silicon oxide layer (12), and this thin layer of silicon oxide (12) is removed by thin layer operation method, for P-type injection is thereafter prepared.

Referring now to Fig. 4.P-type impurity shown in numbering 37 among the figure is driven in the surface of P-substrate 10.The dosage that the P-type injects is 6 * 10 ¹³Individual ion/square centimeter～8 * 10 ¹³Individual ion/square centimeter, used energy are 60Kev.Boron is used as substrate (10) is carried out impurity that ion injects to form P-buried layer (38), (39) and (40).When the boron ion is driven into substrate, much thick that oxide region (32) and (34) make following N+ layer (26) and (28) not be subjected to the influence of P-type impurity (37), substrate (10) is heated half an hour approximately once more, reach about 800～1000 ℃ temperature, enter substrate (10) to order about the boron ion, then remove thick oxide (32) and (34), substrate (10) surface with hydrogen fluoride solution, as a result, N+ district (26), (28) and P type floor (38)～(40) are exposed to the upper surface of substrate (10).

In Fig. 5, according to next making step of the present invention is the epitaxial loayer (44) of deposition N-N-type semiconductor N material, epitaxial loayer (44) comprises the semi-conducting material in the ambipolar and CMOS transistor pond that will form therein, for high performance bipolar transistor, epitaxial loayer (44) is thinner, preferably about 1.5 micron thickness, the resistance of about 4～6 ohmcms is high-quality ambipolar enough with the CMOS transistor to forming.High temperature in the epitaxial process can be in buried layer (26), (28), occur between (38)～(40) and the epitaxial loayer (44) spreading on the impurity to a certain degree.

Subsequently, growing silicon oxide thin layer (46) on the surface of epitaxial loayer (44), in optimised form of the present invention, thin layer of silicon oxide (46) thickness (Fig. 6) is about 400～600

Scope in.Subsequently, its surface utilizes low-pressure chemical vapor deposition process to deposit a layer thickness to be about 1400

Silicon nitride layer (48).Equally, as shown in Figure 6, on the surface of this nitride layer (48), be coated with or other coating method is coated with the photoresist (50) of a bed thickness with throwing, go up the making figure at photoresist layer (50), the nitride that will expose is removed zone (52) and (54) that will form the N-pond to form below it.

Substrate (10) after handling is carried out the N-type inject (58), form pond (60) and (62) effectively, (60) and (62) are positioned at the determined zone of perforate (52) and (54) by photoresist mask (50).Pond (60) and (62) form by injecting phosphorus, use the energy and 1.5 * 10 of about 80Kev when annotating phosphorus ¹²Individual ion/square centimeter～2.5 * 10 ¹²The dosage of individual ion/square centimeter, the concentration in N pond is preferably about 2 * 10 ¹⁶Ion/cubic centimetre.Remove photoresist layer (50) then.

Along with proceeding of ambipolar and CMOS integration making technology, semiconductor pond (60) and (62) are oxidized to form thick oxide regions (66) and (68), and this oxidizing process proceeds to semiconductor pond (60) always and (62) go up formation about 4000

Silica.Substrate after the processing (10) is by being heated to high annealing, be deep into epitaxial loayer (44) with the impurity that orders about N-type pond (60) and (62), inject the lens lesion that causes by ion and also repaired in annealing process, Fig. 6 has drawn so far according to the formed semiconductor of making step of the present invention.

Then remove the remainder of silicon nitride layer (48), the thin oxide layer below it (46) is removed with traditional thin layer technology.With reference to Fig. 7, the substrate (10) after handling is carried out ion inject (72), P-type impurity, for example boron is injected in the epitaxial loayer (44), and when the P-type injected (72), used energy was about 40,000 electron-volts (40Kev), dosage about 5.5 * 10 ¹²Individual ion/square centimeter～6.5 * 10 ¹²Individual ion/square centimeter, thus concentration about 3 * 10 formed ¹⁶The P-type pond (74) of individual ion/cubic centimetre, (76) and (78).About 1 hour of the substrate through so handling (10) heating, reach about 100～1200 degrees centigrade temperature, more be deep into epitaxial loayer (44) to force P-type impurity.Remove thick oxide areas (66) and (68) with hydrofluoric acid solution then.

Along with the various annealing steps that the substrate of handling (10) is carried out, merge with following heavily doped buried layer (26), (30) and (38)～(40) mutually with (62) and P-semiconductor pond (74)～(78) in N-semiconductor pond (60), the drawn treatment situation of substrate of Fig. 8 with P-and N-semiconductor pond, substrate after the processing (10) oxidation once more, the upper surface in the pond forms one deck thin layer of silicon oxide (80) thus.In addition, on thin layer of silicon oxide (80), utilize low-pressure chemical vapor deposition process deposition one deck about 1400

Silicon nitride layer (82), another photoresist layer (84) of forming the mask for the third time of technology of the present invention is applied on the silicon nitride layer (82), making figure on the photoresist layer so that on the PN semiconductor junction that forms between P-pond and the N-pond, form perforate (86), in addition, in photoresist layer (84), form perforate (88), so that in N-pond (60), form and be used for making bipolar transistor deep collector zone, then, in photoresist mask layer (84), etch away thin layer of silicon oxide (80) and silicon nitride layer (82) with plasma etch techniques in the opening area.

Fig. 9 to 11 is near the enlarged diagrams in the zone of the PN junction of P-buried layer (38) and N-buried layer (26) formation.As shown in Figure 9, the semi-conducting material of P and N pond (74) and (60) also is etched to about 900～1000

The degree of depth.The etched surfaces that P and N pond material expose is carried out cleaning, if necessary, can carry out the ion injection and stop so that form raceway groove in corresponding pond.For the purpose of figure clear, the raceway groove that do not draw among the figure stops.The substrate of handling (10) places oxidation environment to form thin silicon oxide layer (90), this oxide layer (90) about 200～300 again Thick, deposit the thin layer of sin (92) of one deck with the low pressure chemical vapor phase deposition again on the whole surface of substrate, this one deck also comprises the thin oxide layer (90) of the bottom that covers groove and had before deposited and made on the silicon nitride (82) of figure around groove.The degree of depth about 400 of nitride layer (92) deposition

Subsequently, on nitration case (92), deposit one deck silica (94) again, the oxide that is deposited (94) about 2000 Thick, this one deck deposits with tetraethyl ortho silicate (thick tetraethyl orthosilicate) with chemical vapor deposition method.Fig. 9 is the cross-sectional view that has experienced the substrate position of above-mentioned technology.

Figure 10 has represented to experience the substrate behind the anisotropic etching (10), has removed the material of below during anisotropic etching selectively, has promptly removed the whole oxide layer (94) and second nitration case (92) of deposition.Oxide wet etch has been removed the thin layer of silicon oxide (90) that covers groove (87) bottom effectively, wet etching is not anisotropic in itself, so just etched away silicon nitride sidewall (96) part of silicon oxide layer (90) down, silicon nitride sidewall (96) bottom is etched, shown in number among the figure (98), the exposed region of groove (87) is cleaned to remove any remaining residue, obtains a clean Surface, does not have other material.

Figure 11 is illustrated in and has formed the very thick later substrate (10) of field oxide (100) of one deck in the groove (87), and substrate (10) is placed in the environment that is full of oxygen to be consumed to until the silicon pond material that exposes is enough to form about 8000

Oxide (100).When forming this monoxide, the temperature of substrate is raised to about 900 degrees centigrade, and keeps one section to be enough to grow 8000

The time of silica (1000).Silicon materials under oxide (90) are by the not influence of oxidated environment of nitration case (82) protection.Therefore, oxide does not thicken.

Peel off nitration case (82) from the surface of substrate (10), the superficial growth thin layer of silicon oxide (102) in the semiconductor pond, as shown in figure 11.On the whole surface of substrate, carry out threshold value adjustment and inject (104) to obtain desirable threshold voltage.NMOS and PMOS transistor can conductings on this threshold value.The impurity that is injected can be boron, and its dosage is enough to obtain desirable threshold voltage and gets final product.

Then, photoresist mask layer (106) is coated in the surface of substrate (10), and makes figure thereon with the formation electrode zone (108) that concentrates.The N+ electrode (110) that concentrates also is to inject phosphorus by the determined perforate of figure (108) on the photoresist mask (106) to form.The dosage of phosphorus about 2 * 10 ¹⁶Individual ion/square centimeter～3 * 10 ¹⁶Individual ion/square centimeter, and with about 100,000 electron-volts of 100Kev high-energy) forms the heavy doping collector electrode (110) that gos deep into bipolar transistor pond (60).Figure 12 has represented to form electrode (110) substrate (10) afterwards that concentrates, and photoresist layer (106) is peelled off by the upper surface from substrate, and preceding grid silicon oxide layer (102) is peelled off simultaneously.

Substrate (10) is placed the silicon oxidation environment once more, is 200 in the substrate surface grow thick Silicon dioxide layer (111), as shown in figure 13.As can be seen, grid oxic horizon (111) covers the N-pond (60) that will form bipolar transistor therein, will form the transistorized N-of PMOS pond (62) therein, and the N-pond (78) that will form nmos pass transistor therein.Importantly, oxide layer (111) has formed insulator between the CMOS transistor is to transistor conducting channel below the gate electrode, and the thickness of oxide layer (111) can change, to realize the further adjusting to the CMOS transistor threshold.

According to major technique feature of the present invention, the emitter of bipolar transistor utilizes polysilicon deposition technology to form, below this process detail of narration.The polycrystalline silicon material that is used to form ambipolar multi-emitter also by be used for forming the CMOS transistor the same processing step of gate electrode deposited.Referring to Figure 13, polysilicon thin layer (112) is deposited over the whole surface of substrate, and the degree of depth of polysilicon is preferably in 900～1100

Between, also can adopt other thickness.So far, the 5th photoresist mask layer (114) is coated in wafer surface, form figure thereon to form the perforate (116) of bipolar transistor, photoresist layer (114) has enough thickness so that provide mask for P-type impurity injects (118), inject (118) at P-type impurity, the boron ion is ordered about by polysilicon layer (112) and thin oxide layer (111) to form semiconductor-based polar region (120).

When carrying out base stage injection (118), the about 1-2 of the dosage of boron * 10 ¹⁴About 60,000 electron-volts of individual ion/used energy of square centimeter.As shown in figure 13, inject (118) and form a horizontal base (120) that extends along the whole surface of N-pond (60), photoresist mask layer (114) is removed, another layer photoresist (122), it is the 6th mask of the present invention, is applied to substrate surface.

Figure 14 represents to form internal emitter perforate (123) contacts perforate (124) with collector electrode the 6th photoresist mask (122).Polysilicon thin layer (112) and thin layer of silicon oxide (111) execution dry chemical are etched with these materials of removing in the ambipolar crystalline region of opening until till the injection surface (120), the various sedimentary deposits under photoresist mask layer (122) are not removed by dry-etching.The base stage interlayer region (125) that exposes is cleaned with Piranhe commonly used or RCA cleaning agent.Substrate (10) a few minutes of at high temperature annealing deeper enter N-pond (60) to force the bipolar transistor base stage to inject (120).After annealing, the exposing surface of semiconductor pond (60) is further cleaned to guarantee not having residual oxide to stop from the teeth outwards, and the hydrogen fluoride cleaning fluid with 10% cleans its upper surface.

On the whole surface of wafer, deposit thicker second polysilicon layer (126) of one deck with traditional depositing operation.This second polysilicon layer (126) thick about 4000

, about 1000 of same deposition up till now

Thick ground floor (112) merges mutually.Figure 15 explanation is on NMOS gate oxide and PMOS transistor gate oxide (111), and second polysilicon layer of going up formation Polysilicon Composite Structures layer (128) at ambipolar intrinsic multi-emitter, base stage interface zone (125) and collector electrode (110).Polysilicon (128) is by for example phosphorus injection of heavy dose of N-type impurity.Cover the heavily doped polysilicon on the gate oxide (111), after making figure and being etched with, will form the transistorized grid electric conductor of corresponding N MOS and PMOS.Going up the heavily doped polysilicon that forms in emitter/base interface (125) then is that the emitter region below the formation provides diffusant in the base stage (120) below, importantly, doped polycrystalline silicon (128) locate to form physics in emitter/base interface (125) with base region (120) with the contacting of electricity.Injection (132) to polysilicon is preferably in about 85Kev, concentration is 1.5～2.5 * 10 ¹⁶The following of individual ion/cubic centimetre carries out.

Then, the 7th photoresist mask layer (135) is applied to the surface of wafer, and makes figure, as shown in figure 16.The polysilicon layer that exposes is carried out etching, and on MOS transistor gate insulator (136) and (134), and the polysilicon on emitter bipolar transistor/base stage interface (125) and the electrode that concentrates (110) still is retained on the position.Polysilicon region (140) forms the part of bipolar transistor collector electrode, has only the base (120) in heavily doped polysilicon emitter (142) contact interface (125), but part of grid pole oxide (111) is lived in imbrication simultaneously.So just reduced the criticality (precision) of the mask alignment that forms this nested emitter structure.When forming wall shape emitter structure, will make figure at the photoresist mask (135) on the bipolar transistor zone, its resist edge requires to aim at the edge-perpendicular of perforate in the gate oxide thin layer (111).

Photoresist mask layer (135) is by being peelled off to proceed production process thereafter, as Figure 17 as showing.Along with the carrying out of manufacture craft process of the present invention, one deck similar 2500

Silica (144) is deposited on the surface of substrate.Similar oxide layer (144) can comprise the tetraethoxysilane with traditional plasma technology deposition.As seen from Figure 17, the silicon oxide layer of deposition (144) same gate oxide level (111) and the MOS transistor oxide layer that forms gate insulator (134) and (136) merge mutually.

Similarly oxide skin(coating) (144) is produced the formation thing among Figure 18 thus by non-homogeneous etching in vertical direction.Anisotropic etching process is performed until removes 2500 approximately

Silica, that is, only stay on the sidewall that is deposited on MOS transistor grid polycrystalline silicon/oxide structure (146) and (148), and the oxide on the sidewall of emitter bipolar transistor structure (150).In nmos pass transistor, form lightly doped drain polar form structure.Side wall oxide (152) is very important during with the elimination thermoelectronic effect.Side wall oxide (154) and (156) can pair pmos transistor and bipolar transistor generation injurious effects.

Figure 19 represents bipolar transistor ring emitting electrode island (158).The base stage of this bipolar transistor and emitter structure can constitute with other layouts, below to this with for a more detailed description.

As shown in figure 20, the 8th photoresist mask layer (162) is applied to the surface of wafer.Go up to make figure so that source electrode in nmos pass transistor and drain electrode perforate and carry out that ion injects (165) so that form heavily-doped semiconductor district (164) and (166) in nmos pass transistor at this mask layer (162), semiconductor region (164) and (166) alignment grid electrode structure (170) automatically form source electrode and drain electrode, N++ above-mentioned injects and realizes that with arsenic and/or phosphorus dosage is 5 * 10 ¹⁵Individual ion/square centimeter, energy are 150,000 electron-volts (150Kev), subsequently, remove photoresist layer (162).

Wafer is then prepared to inject formation P-channel MOS transistor zone with P-type impurity and is contacted with the base stage of bipolar transistor.Referring to Figure 21, be coated with the 9th photoresist mask (171) at the substrate surface upthrow, and make the perforate of figure thereon, and the contact zone perforate (176) (178) in bipolar transistor base stage (120) with formation PMOS transistor source and drain region (172) and (174).Then, wafer is injected boron to form P+MOS transistor source (180) and drain electrode (182) zone.Source area (180) and drain electrode (182) be alignment grid electrode structure (168) automatically.

P+ boron ion injects doped region (184) and (186) that also form high concentration in ambipolar base region (120), though the ambipolar district that the P-type injects is drawn as two zones at sectional view, in fact the base stage contact is annular, and around emitter island structure (158).Boron implantation dosage about 5 * 10 ¹⁵Individual ion/square centimeter, about 30,000 electron-volts of (30Kev) photoresist mask layers of energy (171) are removed.

Then, substrate was annealed under about 900 degrees centigrade temperature 30～90 minutes, further was deep into below the gate oxide (134) with the N+ impurity that orders about nmos pass transistor source electrode (164) and drain electrode (166) district.The also further diffusion in transistor pond (62) of the P+ impurity in PMOS transistor about (180) and drain electrode (182) district, a bit of distance of horizontal expansion under gate oxide (136).Form P+ doped region (184) and (186) also further diffusion downwards of the contact of bipolar transistor extrinsic base.The N++ impurity of emitter-polysilicon is driven to following base region (120), forms emitter (188) thus.Base (120) has formed the semiconductor moat of bipolar transistor.As will be discussed later in detail, according to the present invention, bipolar transistor can be made its area less than existing bipolar transistor with the moat district, substrate according to above-mentioned steps processing is drawn among Figure 21, as long as annealing steps, the impurity of various semiconductor regions just can spread and activate, to form suitable semiconductor transistor component.

Subsequently, use sulfuric acid and hydrogen fluoride solution clean wafers successively, at substrate surface deposition one deck 1000

Titanium, then, the temperature of substrate is increased to about 675 degrees centigrade and keep less than time of 1 hour so that titanium reacts in being rich in the inert environments of nitrogen, every titanium and the place that silicon adjoins mutually just form the silicide of the titanium that conducts electricity.The contacted place of every titanium and silica when for example titanium contacts with field oxide region under it, just forms the nitride of the titanium of conduction.Substrate surface is cleaned by the hydrochloric acid solution of dilution.

Among Figure 22, titanium nitride (TiN) is represented with hatching (190), and titanium silicide TiSi ₂Represent with line (192).Because the reaction of P+ base stage contact zone (184) and (186) and titanium has formed titanium silicide zone (194) and (196).In the source area of PMOS and nmos pass transistor and drain region, also produce same reaction, form corresponding laterally source electrode and drain and contact conductor.

Subsequently, on reacted titanium layer, apply photoresist mask (198), and at last making figure to form each terminals of transistor device or back panel wiring that each conducts electricity as shown in figure 23.Among the figure, titanium nitride is not removed with suitable etchant by the part that mask is sheltered.Importantly, as the zone of the contact of bipolar transistor base stage (120), the contact of formation extended laterally to the position that covers on the thick field oxide (200) from transistor below the photoresist part (199) that is shaped on figure had formed effectively.By this structure, the bipolar transistor that can make small size need not to worry that some are crowded that how very tight electrode holds, and thing followed mask alignment problem.In the embodiment of Figure 23, the 2nd base stage contact zone is formed by photoresist mask section (202), similarly, by utilizing mask section (204) to form source electrode conduction tagma and utilizing mask section (206) to form drain electrode conduction tagma, MOS transistor also can be done very for a short time.Mask section (204) and (206) all respectively on the part of field oxide (208) and (209), provide at locational each the transistorized connecting line of lateral separation thus.The figure of nmos pass transistor is similar therewith.Then remove the photoresist of figure.

As shown in figure 24, comprise the 1st horizontal base stage contact zone (210) of titanium nitride, by heavily doped P+ extrinsic base region (184) and on titanium silicide district (194) form electric the contact with semiconductor intrinsic base region (120).Comprise that conducting electricity the buried emitter contact zone (214) of titanium silicide forms electric the contact with polysilicon electric conductor (142).Emitter-polysilicon (142) forms buried the contact with titanium silicide (214), forms electric the contact with following semiconductor emission utmost point active area (188).As mentioned above, emitter region (188) is dopant diffusion and the heavily doped region that forms in the intrinsic-OR active part of base (102) below of polysilicon (142).Intrinsic base region (120), N-pond (60) and N+ that the bipolar transistor effect appears at below emitter region (188), the emitter region (188) concentrate between the electrode (110).The contact of electrode of concentrating is to realize by conductive polycrystalline silicon (140) to the silicide band (216) of titanium, and the second titanium nitride band (218) then forms the 2nd horizontal contact zone, and the 2nd being electrically connected to intrinsic semiconductor base (120) is provided.This contact realizes by P+ base stage contact zone (186) and titanium silicide intermediate layer (196).

Bipolar transistor is by thick surface field oxide layer (200) and (220) lateral isolation.The isolation of the subsurface substrate of bipolar transistor is then provided by P-pond (74) and (76).It is very thin that N-extends collector area (60) outward, so a kind of high performance bipolar transistor is provided, buried N+ sublayer (26) has reduced the series connection collector resistance of bipolar transistor, makes transistor have low collector saturation voltage.N+ buried layer (26) has increased the anti-breech lock to adjacent transistor.

PMOS and nmos pass transistor adopt the layout that is similar to bipolar transistor to form, and the PMOS transistor comprises that a part is covered with thick field oxide (208) and the horizontal titanium nitride that contact with silicide intermediate layer (234) on the source region contacts (232).Source electrode intermediate layer (234) is electric contact the with PMOS transistor source regions (180).Gate salicidation titanium layer (236) forms electric the contact with following conductive polycrystalline silicon (168).On titanium silicide grid element (236), add a voltage and just can produce electric field at the two ends of gate oxidation thin layer (136), thereby form reverse or depletion region in the N-moat (62) below, thereby between PMOS transistor source (180) and drain region (182), form conducting channel.Transistor drain (182) contacts (238) by the titanium nitride that intermediate layer titanium silicide district (246) is connected to lateral extension, and the drain electrode contact (238) of this lateral extension partly covers thick field oxide (209).Should be pointed out that from cross section to look that the transistorized structure of PMOS is similar to bipolar transistor, narrate other similar parts of ambipolar and CMOS transistor layout below.

Nmos pass transistor forms on the face of P type moat (78), is positioned between field oxide thick-layer (209) and (244).Nmos pass transistor source area (164) is connected to the titanium nitride electric conductor (248) of lateral extension by middle silicide layer (246).Electric conductor (248) partly covers thick field oxide (209) from the nmos pass transistor horizontal expansion.Realize being electrically connected with similar method to transistor drain (166), promptly, be connected to the titanium nitride conductor extending transversely (252) that covers field oxide thick-layer (244) by middle silicide (250), pass through to form in the P-moat (78) of polysilicon layer (170) under gate oxide (134) conductive channel at a voltage that adds in the titanium silicide grid contact (254).Like this, electric current just can flow to transistor drain district (166) from source area (164).

Figure 25 is the cross-sectional view of the example of an integrated ambipolar and cmos circuit, has metallization and passivation layer above.Passivation layer (258) comprises the silica thick-layer that is deposited on the substrate face, and it is coated with mask and makes figure to form the perforate of transistorized Metal Contact electrode.Bipolar transistor base electrode (260) and (262) form conducting metal with traditional mask and figure, and conducting metal is full of the perforate in the passivation layer (258), the base stage contact (210) and (218) of contact lateral extension.Though do not draw, bipolar transistor base electrode (260) and (262) are to be linked together by the metallization (not shown) in the substrate upper surface another location.Emitter electrode (264) forms by the corresponding aperture in the passivating oxide (258), contacts (214) with the buried emitter of following silicide and contacts.In practice, emitter electrode (264) may be from following buried emitter contact (214) lateral shift, the field oxide around part covers.In the embodiment shown in Figure 25, the electrode that concentrates (110) district is horizontal, and removes slightly from base stage and emitter region.Realize that it is that perforate in the oxide (258) by passivation forms to the contact of the electrode that concentrates (110) by collector electrode (266), and contact (216) with the titanium silicide collector electrode and contact.Heavily doped polysilicon (140) provides between electrode district that concentrates (110) and titanium silicide contact (216) and is electrically connected.

By the structure of this bipolar transistor as seen, required various contact electrodes do not need to be crowded together mutually, do not need vertically to aim at the following small size zone of bipolar transistor yet, this has just simplified the neat or aligning of cover of various masks, and base electrode (260) also is simplified any surf zone of linking on the corresponding band with (262) with the following aligning that contacts band (210) and (218) extending transversely can form reliable connecting line.Under the situation that the mask of formation perforate is slightly lacked of proper care in the oxide layer (258) of passivation, as can be seen, can not produce injurious effects.

The electric contact electrode of PMOS and nmos pass transistor is similarly by forming perforate in the oxide (258) of passivation, and deposit corresponding metallization material thereon and constitute, specifically, the PMOS transistor comprises the source electrode (268) that contacts band (232) contact with the source electrode of extending transversely.One gate electrode (270) is formed up to the electric contact of MOS transistor drain electrode (182) by titanium silicide (236) contact grid polycrystalline silicon (168) by electrode (272).Drain electrode (272) contact is at the drain electrode contact band (238) of its extending transversely that forms down.The implementation method of the electric contact of nmos pass transistor similarly; Nmos pass transistor comprises source electrode (274), gate electrode (276) and the drain electrode (278) of metal.

Figure 26 is the sectional view by the integrated ambipolar and CMOS structure of above-mentioned steps making, and passivation and metal layer omit so that transistorized feature is more clear among the figure, and this figure further specifies ambipolar and the similitude cmos device layout.

Another bipolar transistor (280) that Figure 27 explanation is made according to the present invention.Those skilled in the art can make according to the above description has cross section shown in Figure 27 and the transistor of overlooking layout shown in Figure 28.Transistor (280) can be produced on the P-type substrate (10), and N+ buried layer (282) is formed between P-type sublayer (284) and (286), and bipolar transistor (280) forms in the N-type epitaxial thin layer (288) that forms the transistor pond.In this embodiment of the invention, bipolar transistor (280) comprises the N+ electrode (290) that concentrates, and extending transversely also covers conduction contact band (292) on the thick field oxide (294).This metal end electrode (295) contacts with the titanium nitride collector electrode electric conductor (292) of extending transversely.Conduction band (292) is connected to the electrode that concentrates (290) by silicide intermediate layer (296) and N+ semiconductor moat district (298), buried emitter contact (300) comprises titanium silicide upper strata (302), and with the contacted heavily doped polysilicon electric conductor of following emitter region (306) (304).Emitter region (306) forms in P-type intrinsic base region (308).

Extrinsic P+ base (310) forms between intrinsic base region (308) and titanium silicide intermediate layer (312).Silicide (312) is the result of titanium and P+ moat (310) reaction.As noted above, titanium nitride band (314) also forms with the titanium reaction in blanket of nitrogen, and metal-base electrode (316) just is connected on this titanium nitride electric conductor.

Figure 28 represents the horizontal expansion of emitter electric conductor (304), in order to providing to the self-aligning electric contact of transistor (280) emitter structure, by with cover polysilicon electric conductor (304) on the contacted metal electrode of titanium silicide (302) (318) be constituted to contacting of bipolar transistor (280) emitter (306).The titanium silicide band (302) of extending transversely contacts with emitter district (306) by buried contact structures (300) with polysilicon (304).

The layout of Figure 27 and 28 bipolar transistor (280) allows to concentrate the position of electrode (290) very near intrinsic base region (308) and emitter (306), the design rule of live width that employing is minimum 1 micron and 0.75 micron minimum alignment tolerance, this transistor layout only need the moat area of about 12.5 square microns.Adopt above-mentioned layout, the conductive strips of an extending transversely (314) provide to the connection of transistor base (308), and the conductive strips (292) of relative position and extending transversely then provide to the remote connection of transistor collector (290).And, laterally realized being connected to transistor (280) emitter region (308) with the silicide band (302) that forward direction stretches.From Figure 28 obviously as seen, not only when forming ambipolar and CMOS transistor, used common making step, and the layout of MOS transistor is very similar among bipolar transistor (280) and Figure 26.

Figure 29 and 30 is bipolar transistors (320) of another kind of layout, by this layout, does not form with coverage mode and extends in conductive strips on the surround oxide (322).Bipolar transistor (320) comprises N-type pond (324), formation-P-type base stage moat (326) wherein, and base electrode (328) forms electric contact the with intrinsic base stage (326) by silicide intermediate layer (332) and P+ district (324).Collector electrode then contacts with heavy doping N+ district (342) with following silicide layer (340), and the bipolar transistor effect takes place between the electrode that concentrates (344), semiconductor emission district (346) and the intrinsic base region (326).The composite strip of heavily doped polysilicon (348) and silicide upper strata (350) has formed being electrically connected to emitter region (346).As shown in figure 30, emitter electrode (352) provides the face that contacts with semiconductor emission polar region (346) contact through corresponding silicide (350) and polysilicon layer (348).Adopt aforesaid design rule, the bipolar transistor moat of Gou Chenging only needs the moat area of about 15.62 square microns according to this embodiment.In addition, this transistor layout has reduced base stage and collector resistance, has improved the speed of device thus.

Figure 31 and 32 drawn the respectively cross section and the vertical view of two collector electrode bipolar transistors (352).Formed the concentrate electrode that concentrates (358) of electrode (356) and relative arrangement of the first heavy doping N+ in the extension pond (354).Metal collector electrode (360) contacts with the titanium silicide layer (362) that go up to form at heavily doped polysilicon electric conductor (364), and polysilicon electric conductor (364) and the heavily doped N+ electrode district (356) that concentrates contacts.Collector electrode conductive layer (362) and (364) partly cover on field oxide region (366) and (368), provide big horizontal area for mask alignment so that metal electrode (360) is set thereon thus, the making of the second collector electrode contact structures (370) similarly.

The base stage of bipolar transistor (352) comprises intrinsic base region (372), forms emitter region (374) in this base.Extrinsic base region (376) is (372) horizontal expansion from the intrinsic region, appears on the face of N pond (354).Dual forked type titanium nitride electric conductor (378) is partly around silicide extrinsic base region (376).Titanium silicide band (380) stretches on the field oxide around with dual forked type section (378), and contacts with metal-base electrode (382), and electrode (382) comprises the base terminal of bipolar transistor (352).Other embodiment is such as described above, and the emitter region (374) of transistor (352) comprises buried emitter contact (384), and the latter is connected on the silicide band (386) of extending transversely that part covers thick field oxide (not shown).Metal emitting electrode (388) forms electric the contact with horizontal band (386), keeps thus and the contacting of semiconductor emission district (374).The design rule that use proposes above only needs the chip area of 13.75 square microns according to the bipolar transistor moat of this feature.

Another embodiment bipolar transistor (390) that Figure 33,34 and 35 explanations constitute according to principle of the present invention and notion.The feature of this embodiment is that intrinsic base stage (392) is less, has therefore improved transistorized performance, and by the design rule of pointing out, the transistor moat with this layout only needs the chip area of about 17 square microns.

The transistor of describing among Figure 33 and 34 (390) is the symmetrical structure of wall shape emission polar form.The cross section of the wall shape emitter structure of N+ emitter region (394) has been shown among Figure 35, has utilized Figure 33 and 35 pointed wall shape structures, heavily doped polysilicon emitter (394) can fully contact with intrinsic base region (392).Do not have thin silica between side wall oxide (396), what wherein form is a part of many emitter-base bandgap gradings (398), and the width of multi-emitter (398) equals the width of emitter region (394) substantially, each other fully contact.Like this, emitter (394) can have bigger area, and the area of transistor itself is less.

Wall shape emitter transistor (390) also comprises the electrode that concentrates (400) and (402) of symmetry.The intermediate layer that doped polycrystalline silicon (404) and titanium silicide layer (406) provide collector electrode to contact for concentrate electrode district (400) and (402).Metal electrode (408) forms electric the contact by passivation layer perforate (not shown) with titanium silicide (406).Pair of metal base stage contact (410) and (412) realized with cover extrinsic base region (418) and (420) on the superficial layer (414) of titanium silicide contact with the electric of (416).

As shown in figure 34, multi-electrode (408) is used to guarantee the low resistance contact for the electrode district that concentrates (400) and (402).Figure 35 a kind of emitter electrode of separating (422) that is connected to multi-emitter (398) by titanium silicide/polysilicon band (424) that drawn.

Figure 36 is a kind of bipolar transistor (430) of wall shape emission polar form, and it is similar to the structure of nested emitter transistor (352) in Figure 31 and 32 in other respects.Really, the cross-sectional view of transistor (430) and the basically identical among Figure 31 among Figure 36.Transistor (430) comprise one with top titanium silicide layer (434) and with the following contacted multi-emitter in heavily doped N+ semiconductor emission district (432).The same with other wall shape emitter transistor recited above, the whole length of multi-emitter (432) and width all contact with following emitter region.Intrinsic base region is represented with numbering (438) among the figure, and the electrode that concentrates represents that with (440) dual forked type base contact (442) contacts with extrinsic base region (444).

Referring to Figure 36, silicide polysilicon wall shape emitter in one direction extending transversely so that contact with the emitter electrode that separates (446).Dual forked type base stage contact (442) comprises titanium nitride, and the latter is on the field oxide that is positioned at (448).Polysilicon bed course (450) is positioned under the titanium nitride, and base metal electrode (452) contacts with titanium bar (448) formation.

When using above-mentioned design rule, transistor (430) only needs the moat area of about 8.25 square microns.This Xiao Hao district comprises the extrinsic base region of originally seeking peace (438) and (444), makes transistor (430) to make on less chip area.

Figure 37 and 38 has the concentrate NPN wall shape emitter transistor (454) of electrode (456) and (458) of symmetry.Impurity divergent contour wall-forming shape emitter region (460) in intrinsic base region (462) by aforesaid highly doped polysilicon emitter (464).Extrinsic base (466) forms with the side of intrinsic base stage (462) and contacts, and titanium silicide (468) covers extrinsic base (466), and base electrode (472) forms with extrinsic base silicide (468) and contacts.Material by numbering (464) expression is a polysilicon.Emitter contact (476) forms with emitter (460) by polysilicon (464) and is electrically connected.

Used the moat gross area of 8.88 square microns when making the wall shape emitter transistor of Figure 37 and Figure 38 altogether, because area is little, parasitic antenna is reduced effectively, and transistorized effect is enhanced.And the integration density of wafer also is improved.

It in Figure 39 and 40 wall shape emitter NPN transistor (478) according to another type of the present invention's formation.This embodiment is similar to a transistor (454) described in the embodiment, but many titanium nitride bands (480), extend to position far away from extrinsic base region (482), cover on the field oxide (484) of transistor (478).The upper surface of extrinsic base region (482) comprises a silicide layer (486), and it plays the function in intermediate layer between titanium nitride band (480) and the extrinsic base region (482).Titanium nitride band (480) has an oblique angle, as shown in figure 40, so that can contact (476) basic alignment with emitter.Base stage contact electrode (488) forms with polysilicon bed course (490) and contacts.

When using above-mentioned design rule, can only make the transistor moat with the chip area of about 4.5 square microns.

Figure 41 and 42 NPN transistor (492) are similar to the transistor (390) of Figure 33 and 34, but are the nested emitters, rather than wall shape emitter.As shown in figure 42, identical with shown in Figure 33 basically along the cross section of hatching 33.The transistor of nested structure (492) as shown in figure 41.Transistor (492) comprises an emitter (494), and it is the N-type impurity by heavy doping multi-emitter (496), forms by the diffusion of the perforate in the thin silicon oxide (498).Thin silicon oxide (498) connects together with the side wall insulator (not shown).Above the technology of making the nested emitter transistor has been done to be described in detail.The area of emitter region (494) is very little, and is diffused in the p intrinsic base region (500).Bipolar transistor with layout as shown in figure 42, the area of moat only occupies about 20 square microns.

The bipolar transistor of Figure 42 (492) also comprises the electrode district that concentrates (502), and collector electrode (504) forms contact with it.Emitter electrode (506) is formed by the metal level of making figure, and this metal level contacts with polysilicon emitter band (496).Emitter electrode (506) contacts with emitter region (494) by the polysilicon band (496) of conduction.A pair of base stage contact electrode (508) and (510) are connected to the intrinsic base region (500) that is positioned under the emitter region (494) by corresponding extrinsic base region (512) and (514).

Figure 43 is a kind of profile of lateral PNP bipolar transistor, represents with numbering (516) among the figure.Transistor (516) comprises a P+ emitter region (518), a N-base (520) and a P+ collector electrode (522).For fear of voltage breakdown, one slightly doped P-district (524) and heavily doped collector area (522) form and contact, and be positioned between the collector and emitter district (518).Emitter region (518) and collector area (522) form on the face of base stage pond (520), and corresponding silicide layer (526) and (528) are arranged.When using titanium as electric conducting material, layer (526) and (528) comprises titanium silicide.In addition, titanium nitride conductive strips (530) and (532) contact with silicide layer (526) and (528), and cover on corresponding field oxide region (534) and (536).

In order to contact with transistor base (520), be provided with polysilicon and silicide structural (538), these contact structures (538) are similar to the buried emitter structure of narrating previously on making.Specifically, PNP transistor base contact structures (538) comprise silica (540), have sidewall (542), wherein form a polysilicon band (544) and a titanium silicide (546).Though do not draw, the polysilicon (544) of conduction contacts with semiconductor base (520) by perforate in the thin layer of silicon oxide (540).Transistor (516) can with above-mentioned Fig. 1～25 in same processing step make.

Narrated the manufacture craft of a kind of integrated ambipolar and CMOS above.The semiconductor structure cost of manufacture that forms according to the present invention is reduced, and area reduces greatly.This mainly makes ambipolar and processing step MOS transistor owing to having simplified.Various masks can combine, to form ambipolar simultaneously and MOS semiconductor region and lines.

Used and close polysilicon process emitter bipolar transistor and MOS transistor grid structure are formed in same processing step among the present invention.Both can obtain nested with this technology and also can obtain wall shape emitter structure.The polysilicon deposition thing that forms MOS transistor grid conductor and emitter bipolar transistor injects with impurity, can form the gate electrode of high conduction for MOS transistor, form the emitter element of high concentration impurities for bipolar transistor, it is interior to form ambipolar emitter region that highly doped polysilicon emitter element is flooded to intrinsic base region subsequently, and the polysilicon layer of Xing Chenging has been finished the emitter and the grid structure of respective bipolar type and MOS transistor thereafter.

The constraint of mask alignment is alleviated in the present invention, and this is to bring realization by formation from the bus that transistor area extends laterally to part covering field oxide position.With such method, also reduced the vertically aligned requirement of metallization contact pattern, in addition, itself can be contracted to submicron order the transistor live width, and does not need to increase the alignment precision of less transistor area contact.

The circuit working aspect also has advantage, and this is because form ambipolar and MOS transistor in the epitaxial thin layer with buried N+ and P well (pond) and N-, P-shallow well (pond).Adopt such semiconductor structure, the operating characteristic of bipolar transistor is enhanced, and has improved the anti-breech lock of adjacent transistor.The reduction of the series connection collector resistance of bipolar transistor concerning operating characteristic, also is favourable one side.

Though disclosed above about most preferred embodiment of the present invention, but should be clear, can make the variation on many details, this is the selection problem of engineering, do not exceed spirit of the present invention and the scope set forth by claims, and person skilled in the art person can find, in order to realize above-mentioned indivedual advantage, do not need all various advantages of the present invention and characteristics are all concentrated to be used for a kind of integrated circuit.

Claims (7)

1, a kind of vertical bipolar transistor comprises:

One block semiconductor substrate,

A semiconductor collector area,

The semiconductor base that forms in collector area on described substrate surface,

At least an insulating barrier that covers a part of described base, described insulating barrier have a perforate of determining following emitter region,

A semiconductor emission polar region that is arranged in described base and aims at described perforate,

One covers on the described insulating barrier, forms the polysilicon layer that contacts by described perforate with described emitter region,

One forms first metallic conductor of silicide with described polysilicon emitter layer,

One forms electric second electric conductor that contacts with described base,

Form electric the 3rd electric conductor that contacts with described collector area,

It is characterized in that: further comprise a heavily doped semiconductor regions, the silicide intermediate layer between described second electric conductor and described base, and the silicide intermediate layer between described the 3rd electric conductor and described collector area.

2, vertical bipolar transistor as claimed in claim 1 is characterized in that the described second and the 3rd electric conductor comprises that one forms the conducting metal of silicide with corresponding semiconductor base stage and collector area.

3, vertical bipolar transistor as claimed in claim 2 further comprises the thick insulator that is used for described transistor is carried out lateral isolation, and the described second and the 3rd electric conductor places on a part of described thick insulator.

4, vertical bipolar transistor as claimed in claim 3 further is included in the insulating material passivation layer that forms on the described transistor, and described passivation layer comprises and is used to provide the perforate that contacts that enters described first, second and the 3rd conductor.

5, vertical bipolar transistor as claimed in claim 1 is characterized in that described base stage comprises an intrinsic region that the bipolar transistor effect takes place, and the extrinsic region that contacts with described second electric conductor.

6, vertical bipolar transistor as claimed in claim 2 further comprises second silicide contacts that contacts with the formation of described base.

7, a kind of small size bipolar transistor is characterized in that, comprising:

A semiconductor pond that on the face of semiconductor piece, forms, described pond forms described transistorized collector area,

A semiconductor moat that forms in described pond, described moat form described transistorized active intrinsic base region,

An emitter region that in described base, forms,

An extrinsic base region that in described moat, forms, and,

Be used for forming the device that electrically contacts with described extrinsic base region, emitter region and collector area.

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