CN101877344B - Connection hole test structure and method for preparing transmission electron microscopy - Google Patents
Connection hole test structure and method for preparing transmission electron microscopy Download PDFInfo
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- CN101877344B CN101877344B CN2009100504089A CN200910050408A CN101877344B CN 101877344 B CN101877344 B CN 101877344B CN 2009100504089 A CN2009100504089 A CN 2009100504089A CN 200910050408 A CN200910050408 A CN 200910050408A CN 101877344 B CN101877344 B CN 101877344B
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Abstract
The invention discloses a connection hole test structure and a method for preparing transmission electron microscopy (TEM), aiming at solving the problem that the side wall of the connection hole Glue Layer and the thickness of Barrier seed can not be measured in case that the diameter of the connection hole is less than the thickness of a detected sample wafer. The structure comprises a primary hole, a calibration hole and a measurement hole, wherein all the bottom surfaces of the primary hole, the calibration hole and the measurement hole are axis symmetric figures; a plane vertical to the bottom surface exists; a straight line of the plane, which is intersected with the bottom surfaces, is the symmetry axis of all the bottom surfaces; the primary hole is the connection hole; the thickness of the calibration hole perpendicular to the direction of the plane is the thickness of the detected sample wafer for controlling the thickness of the detected sample wafer to reach the predetermined thickness; the thickness of the measurement hole perpendicular to the direction of the plane is equal to the sum of the thickness of the calibration hole and the primary hole; the measurement hole is required to be identical to the object to be measured in the connection hole for measuring the size of the connection hole.
Description
Technical field
The present invention relates to integrated circuit and make the field, relate in particular to connecting hole test structure and TEM method for making sample.
Background technology
Semiconductor fabrication process is complicated, and manufacturing cost is high, and for guaranteeing workmanship, in making the semiconductor chip process, manufacturing test structure on wafer is tested after accomplishing in manufacturing usually.Comprise a lot of through holes (Via) and contact hole connecting holes such as (CT) in the semiconductor chip, it has significant impact to the semiconductor chip quality.Industry is generally made the connecting hole test structure in semiconductor chip at present, after chip manufacturing is accomplished, comes the quality that connecting hole is made in the test chip through the connecting hole test structure again.Usually be filled with filler in the said connecting hole.With reference to Fig. 1, when the test connecting hole, need produce the detection print 10 of connecting hole usually, measure connecting hole sidewall film through this detection print 10 again, for example the thickness of adhesion layer (Gluelayer) 11 and barrier layer (Barrier seed) 12.Wherein United States Patent (USP) associated documents US6.683.304 discloses concrete testing scheme, but there is following problems in this testing scheme:
With reference to Fig. 2; Owing to detect print itself thickness h is arranged, if therefore the connecting hole thickness d is less than detecting the print thickness h, then such scheme can't be measured the thickness of Gluelayer and Barrier seed; And along with the exploitation of advanced process such as semicon industry 45 nanometers; Critical size is more and more littler, and the problems referred to above are serious day by day, therefore needs corresponding solution badly.
Summary of the invention
The present invention solves be at connecting hole thickness when detecting print thickness, can't measure the problem of the thickness of connecting hole sidewall Gluelayer and Barrier seed.
The invention provides the connecting hole test structure, comprise archioporus, calibration hole and measured hole; Wherein the bottom surface of archioporus, calibration hole and measured hole is zhou duicheng tuxing; And exist a plane perpendicular to said each bottom surface, the straight line that intersect said plane and each bottom surface is the symmetry axis of each bottom surface; And archioporus is a connecting hole; Calibration hole equals to detect print thickness perpendicular to the thickness of said in-plane, and the thickness that is used for the control detection print reaches expection thickness; Measured hole equals calibration hole thickness and archioporus thickness sum perpendicular to the thickness of said in-plane, and in measured hole and the connecting hole object to be measured need identical, to be used for the measurement of connecting hole size.
The invention provides the TEM method for making sample of connecting hole test structure, comprise step: begin to cut said connecting hole test structure from the plane that is parallel to said plane of connecting hole test structure one end, until cutting to the calibration hole edge; Begin to cut said connecting hole test structure from the plane that is parallel to said plane of the connecting hole test structure other end, until another edge that cuts to calibration hole.
Compare with existing scheme, the present invention possesses following advantage:
Connecting hole test structure provided by the invention comprises archioporus; Calibration hole and measured hole; The thickness of measured hole equals calibration hole thickness and archioporus thickness sum; And calibration hole thickness equals to detect print thickness, so the thickness of measured hole just must be greater than detecting print thickness, and the connecting hole thickness d of having avoided being used to measure in the existing connecting hole test structure causes measuring the problem of the thickness of connecting hole Gluelayer and Barrier seed less than detecting the print thickness h.
Description of drawings
Fig. 1 is the structural representation of existing connecting hole test structure;
Fig. 2 for connecting hole thickness in the existing connecting hole test structure less than the sketch map that detects print thickness;
Fig. 3 is the structural representation of the connecting hole test structure of embodiment of the invention proposition;
Fig. 4 is the TEM method for making sample flow chart of the connecting hole test structure of embodiment of the invention proposition;
Fig. 5～Fig. 7 is sample making course sketch map during connecting hole test structure TEM sample preparation in the embodiment of the invention.
Embodiment
The problem of mentioning to background technology can then can be avoided the problems referred to above greater than the thickness that detects print if the embodiment of the invention proposes to guarantee to be used in the connecting hole test structure to measure the thickness of structure of connecting hole Gluelayer and Barrier seed.Based on this idea, the embodiment of the invention proposes following connecting hole test structure, to avoid can't measuring less than detecting print thickness owing to connecting hole thickness the problem of the thickness of connecting hole Gluelayer and Barrier seed.
Fig. 3 is the vertical view of connecting hole test structure in the embodiment of the invention, and in conjunction with being somebody's turn to do figure, the connecting hole test structure that the embodiment of the invention proposes comprises: archioporus 31, calibration hole 32 and measured hole 33; Wherein
The bottom surface of archioporus 31, calibration hole 32 and measured hole 33 is zhou duicheng tuxing; And exist a plane A-A ' perpendicular to said each bottom surface, said plane A-A ' is the symmetry axis of each bottom surface with the straight line that intersect each bottom surface; And
Archioporus 31 is a connecting hole;
Measured hole 33 equals calibration hole 32 thickness and archioporus 31 thickness sums perpendicular to the thickness of said plane A-A ' direction, and in measured hole and the connecting hole object to be measured need identical, to be used for the measurement of connecting hole size.
In the present embodiment, preferable archioporus 31 and calibration hole 32 respectively have two, and symmetry is positioned at measured hole 33 both sides, and in the specific implementation, the quantity of archioporus 31, calibration hole 32 and measured hole 33 can independently be selected.
Said in addition connecting hole size is generally the thickness of Gluelayer and Barrier seed, but this structure also can be used to measure other size of connecting hole.
In the present embodiment, said calibration hole 32 thickness are 100 nanometers, and said archioporus 31 thickness are connecting hole thickness, and wherein the thickness of calibration hole 32 can be selected according to the thickness that detects print, can guarantee that usually its thickness gets final product greater than detecting print thickness.
Different to the connecting hole size of measuring in addition; The size of measured hole also needs correspondence; For example if measure the thickness of connecting hole Gluelayer and Barrier seed, need guarantee that then the thickness of Gluelayer and Barrier seed is identical in measured hole and the connecting hole.
The embodiment of the invention also provides the TEM method for making sample of connecting hole test structure, tests the connecting hole size with the connecting hole test structure that adopts the embodiment of the invention to provide through the TEM technology.
Fig. 4 is a connecting hole test structure method of testing flow chart in the embodiment of the invention, and in conjunction with being somebody's turn to do figure, the method comprising the steps of:
Step 2 is from the said connecting hole test structure of the plane cutting that is parallel to said plane of the connecting hole test structure other end, until another edge that cuts to calibration hole.
Above-mentioned steps only provides in the present embodiment characteristic with existing TEM sample making technology difference, and required conventional means when carrying out the TEM sample preparation for other need not to give explanation here.
With reference to Fig. 5～Fig. 7, be sample making course sketch map during connecting hole test structure TEM sample preparation in the present embodiment.
With reference to Fig. 5, at first cut said connecting hole test structure from the plane that is parallel to plane A-A ' 1～1 ' of connecting hole test structure one end; With reference to Fig. 6, when being cut to the edge 60 of calibration hole 61, stop cutting; With reference to Fig. 7,, after completion detects the print making again, obtain the size of connecting hole through the size of measuring measured hole from the plane cutting that is parallel to plane A-A ' to calibration hole 61 another edges 62 of the connecting hole test structure other end.
Connecting hole described in the present embodiment is of a size of the thickness of Gluelayer and Barrier seed, but this structure also can be used to measure other size of connecting hole.
61 thickness of calibration hole described in the present embodiment are 100 nanometers, and wherein the thickness of calibration hole 32 can be selected according to the thickness that detects print, can guarantee that usually its thickness gets final product greater than detecting print thickness.
Through above-mentioned method of testing, even connecting hole thickness is less than detecting print thickness, the embodiment of the invention also can realize the for example measurement of Gluelayer and Barrier seed thickness of connecting hole size, has solved the problem that can't realize this measurement in the background technology.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, belong within the scope of claim of the present invention and equivalent technologies thereof if of the present invention these are revised with modification, then the present invention also is intended to comprise these changes and modification interior.
Claims (8)
1. a connecting hole test structure comprises archioporus, calibration hole and measured hole; Wherein the bottom surface of archioporus, calibration hole and measured hole is zhou duicheng tuxing; And exist a plane perpendicular to each bottom surface, the straight line that intersect said plane and each bottom surface is the symmetry axis of each bottom surface; And
Archioporus is a connecting hole;
Calibration hole equals to detect print thickness perpendicular to the thickness of said in-plane, and the thickness that is used for the control detection print reaches expection thickness;
Measured hole equals calibration hole thickness and archioporus thickness sum perpendicular to the thickness of said in-plane, and in measured hole and the connecting hole object to be measured need identical, to be used for the measurement of connecting hole size.
2. structure as claimed in claim 1 is characterized in that, said archioporus and calibration hole respectively have two, and symmetry is positioned at the measured hole both sides.
3. structure as claimed in claim 1 is characterized in that said connecting hole is of a size of the thickness of connecting hole sidewall film.
4. structure as claimed in claim 1 is characterized in that, said calibration hole thickness is 100 nanometers, and said archioporus thickness is connecting hole thickness.
5. the method for preparing transmission electron microscopy of a connecting hole test structure, said connecting hole test structure according to claim 1, said method comprises:
From the said connecting hole test structure of the plane cutting that is parallel to said plane of connecting hole test structure one end, until cutting to the calibration hole edge;
From the said connecting hole test structure of the plane cutting that is parallel to said plane of the connecting hole test structure other end, until another edge that cuts to calibration hole.
6. method as claimed in claim 5 is characterized in that, said archioporus and calibration hole respectively have two, and symmetry is positioned at the measured hole both sides.
7. method as claimed in claim 5 is characterized in that, said connecting hole be of a size of connecting hole sidewall film thickness.
8. method as claimed in claim 5 is characterized in that, said calibration hole thickness is 100 nanometers, and said archioporus thickness is connecting hole thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100504089A CN101877344B (en) | 2009-04-30 | 2009-04-30 | Connection hole test structure and method for preparing transmission electron microscopy |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100504089A CN101877344B (en) | 2009-04-30 | 2009-04-30 | Connection hole test structure and method for preparing transmission electron microscopy |
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| Publication Number | Publication Date |
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| CN101877344A CN101877344A (en) | 2010-11-03 |
| CN101877344B true CN101877344B (en) | 2012-05-09 |
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| CN2009100504089A Expired - Fee Related CN101877344B (en) | 2009-04-30 | 2009-04-30 | Connection hole test structure and method for preparing transmission electron microscopy |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104716125B (en) * | 2013-12-17 | 2018-11-02 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor film thickness measuring calibrates standard film and its manufacturing method |
| CN104792584B (en) * | 2014-01-17 | 2017-08-29 | 中芯国际集成电路制造(上海)有限公司 | A kind of preparation method of TEM sample |
| CN106556721A (en) * | 2015-09-29 | 2017-04-05 | 中芯国际集成电路制造(上海)有限公司 | Test sample and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6683304B1 (en) * | 2002-07-08 | 2004-01-27 | Chartered Semiconductor Manufacturing Limited | Method for a plan-view transmission electron microscopy sample preparation technique for via and contact characterization |
| CN1504742A (en) * | 2002-11-28 | 2004-06-16 | 威光机械工程股份有限公司 | Automatic optical detecting system for blemish assembly on printed circuit board |
| US7053383B2 (en) * | 2003-11-11 | 2006-05-30 | Omniprobe, Inc. | Method and apparatus for rapid sample preparation in a focused ion beam microscope |
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- 2009-04-30 CN CN2009100504089A patent/CN101877344B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6683304B1 (en) * | 2002-07-08 | 2004-01-27 | Chartered Semiconductor Manufacturing Limited | Method for a plan-view transmission electron microscopy sample preparation technique for via and contact characterization |
| CN1504742A (en) * | 2002-11-28 | 2004-06-16 | 威光机械工程股份有限公司 | Automatic optical detecting system for blemish assembly on printed circuit board |
| US7053383B2 (en) * | 2003-11-11 | 2006-05-30 | Omniprobe, Inc. | Method and apparatus for rapid sample preparation in a focused ion beam microscope |
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| CN101877344A (en) | 2010-11-03 |
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