CN104716125B - Semiconductor film thickness measuring calibrates standard film and its manufacturing method - Google Patents
Semiconductor film thickness measuring calibrates standard film and its manufacturing method Download PDFInfo
- Publication number
- CN104716125B CN104716125B CN201310695221.0A CN201310695221A CN104716125B CN 104716125 B CN104716125 B CN 104716125B CN 201310695221 A CN201310695221 A CN 201310695221A CN 104716125 B CN104716125 B CN 104716125B
- Authority
- CN
- China
- Prior art keywords
- thickness
- pattern
- area
- wafer substrate
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The invention discloses a kind of semiconductor film thickness measuring calibration standard film and its manufacturing methods, and the calibration standard film includes wafer substrate and the area of the pattern of at least two difference film thickness grade positioned at the wafer substrate surface.The present invention may be used and be calibrated to multiple level of thickness with a piece of standard film due to forming the area of the pattern of multiple level of thickness on a piece of standard film.Compared with prior art, the present invention can save the spending of purchase standard film, improve film thickness measurement platform to the measurement utilization rate of product and the working efficiency of operating personnel, while also reducing the fragmentation probability of standard wafer and the efficiency of management and control.
Description
Technical field
The present invention relates to semiconductor test technologies, more particularly to a kind of for used in semiconductor film thickness measuring equipment
Calibrate standard film and its manufacturing method.
Background technology
With the continuous development of manufacture of semiconductor technique, role is more and more important wherein for measurement equipment, ensures
The accuracy that semiconductor measures is equally particularly important, and ensures the accuracy standard film that needs to rely on measured and determine equipment
Phase calibrates.
Semiconductor fabrication facility has a plurality of types of measurement platforms（Equipment）, the equipment board that is measured for film thickness
Thickness measuring is needed to calibrate standard film.Currently, a set of thickness measuring calibrates standard film by several pieces wafers（wafer）Composition, it is each
Wafer is to calibrate a thickness value, the center per wafer（Shiny surface）Grow the titanium dioxide of one layer of determining thickness
Silicon, to form pattern in crystal circle center position（pattern）Region, the region are confirmed to be calibration region.For example, being made at present
A set of standard film for film thickness measurement platform, silica are formed by the thickness of area of the pattern in crystal circle center position
It angstrom is differed from 20 angstroms to 10000, shares 11 kinds of different film thickness, i.e. 11 standard films, the unit price per a piece of standard film is about 1.5
It ten thousand dollars, according to process requirement, needs at least to configure 6 standard films（Including from most thin to most thick）, in the calibration side of internal standard method
Under method, ensure in different film thickness grades（level）All there is standard film to be calibrated to it, and then ensures the standard of measurement platform
True property.
By above description it can be seen that；One measurement platform of existing technology alignment needs to use multi-disc standard film, and
Existing general standard film price all costly, needs to spend a large amount of money to buy and carry out routine calibration to standard film every year；
In addition, during calibration, measurement platform needs repeatedly to load（load）And unloading（unload）Different grades of standard film,
On the one hand it can take a significant amount of time, reduce board to the measurement output capacity of product, mark is on the other hand will increase in transmission process
The risk of quasi- wafer damage；Furthermore multi-disc standard wafer is also difficult to uniformly preserve.
Invention content
In view of this, a kind of semiconductor film thickness measuring calibration standard film of present invention offer and its manufacturing method, to realize
Using the calibration with a piece of standard film to multiple level of thickness.
What the technical solution of the application was realized in：
A kind of semiconductor film thickness measuring calibration standard film, including：
Wafer substrate；
Positioned at the area of the pattern of at least two difference film thickness grade of the wafer substrate surface.
Further, the wafer substrate is silicon chip, and the area of the pattern material is silica.
Further, the area of the pattern is rounded, a diameter of 35mm~45mm.
Further, the area of the pattern is N number of, N >=2, and the thickness of each area of the pattern is each unequal, N number of area of the pattern
In, the thickness of the n-th area of the pattern is the n-th thickness, wherein 1≤n≤N.
Further, N number of area of the pattern is distributed evenly in around the wafer substrate center, and N number of figure
Wafer substrate center described in case region distance is equal.
Further, the distance of the center of each area of the pattern to origin is 45mm~55mm.
Further, arbitrary in N number of area of the pattern using the center of the wafer substrate as in the polar coordinates of origin
The difference of polar angle between two adjacent area of the pattern is equal.
Further, the area of the pattern is 6, and 6 area of the pattern are respectively：
First area of the pattern, thickness are first thickness；
Second area of the pattern, thickness are second thickness；
Third area of the pattern, thickness are third thickness；
4th area of the pattern, thickness are the 4th thickness；
5th area of the pattern, thickness are the 5th thickness；
6th area of the pattern, thickness are the 6th thickness；
The first thickness is 10~30 angstroms, and the second thickness is 35~55 angstroms, and the third thickness is 100~150
Angstrom, the 4th thickness be 1000~3000 angstroms, the 5th thickness be 5000~7000 angstroms, the 6th thickness be 8000~
12000 angstroms.
A kind of manufacturing method of semiconductor film thickness measuring calibration standard film, including：
One wafer substrate is provided；
The area of the pattern of at least two difference film thickness grade is grown in the wafer substrate surface.
Further, the area of the pattern is N number of, N >=2, and the thickness of each area of the pattern is each unequal, N number of area of the pattern
In, the thickness of the n-th area of the pattern is the n-th thickness, wherein 1≤n≤N.
Further, N number of area of the pattern is distributed evenly in around the wafer substrate center, and N number of figure
Wafer substrate center described in case region distance is equal.
Further, the distance of the center of each area of the pattern to origin is 45mm~55mm.
Further, arbitrary in N number of area of the pattern using the center of the wafer substrate as in the polar coordinates of origin
The difference of polar angle between two adjacent area of the pattern is equal.
Further, the photolithographic stage that the area of the pattern of N number of different film thickness grades is grown in the wafer substrate surface is adopted
Photo etched mask is N number of；Wherein, there is the first photo etched mask N masked areas, N photo etched masks to have from the first mask
Region is to whole masked areas of N masked areas, and the n-th photo etched mask is with from N-N+1 masked areas to the mask regions N
Domain；In all N number of masked areas, the n-th masked areas is consistent with the position of the n-th area of the pattern.
Further, the area of the pattern of N number of different film thickness grades is grown in the wafer substrate surface, including：
The wafer substrate surface carry out first time film deposition, and using the first photo etched mask to institute's deposition film into
Row photoetching is etched the film after photoetching, to form N area of the pattern in the wafer substrate surface；
N-th film deposition is carried out in the wafer substrate surface, and institute's deposition film is carried out using the n-th photo etched mask
Photoetching is etched the film after photoetching, to form N-N+1 masked areas to N masks in the wafer substrate surface
Region；
N-th film deposition is carried out in the wafer substrate surface, and institute's deposition film is carried out using N photo etched masks
Photoetching is etched the film after photoetching, to form the first masked areas to N masked areas in the wafer substrate surface
Whole masked areas.
Further, the area of the pattern is 6, grows the pattern of 6 different film thickness grades in the wafer substrate surface
Photo etched mask used by the photolithographic stage in region is 6, respectively the first photo etched mask, the second photo etched mask, third photoetching
Mask, the 4th photo etched mask, the 5th photo etched mask, the 6th photo etched mask；Wherein,
First photo etched mask has the 6th masked areas；
Second photo etched mask has the 5th masked areas, the 6th masked areas；
Third photo etched mask has the 4th masked areas, the 5th masked areas, the 6th masked areas；
4th photo etched mask has third masked areas, the 4th masked areas, the 5th masked areas, the 6th masked areas；
5th photo etched mask have the second masked areas, third masked areas, the 4th masked areas, the 5th masked areas,
6th masked areas；
6th photo etched mask have the first masked areas, the second masked areas, third masked areas, the 4th masked areas,
5th masked areas, the 6th masked areas；
The area of the pattern of 6 different film thickness grades is grown in the wafer substrate surface, including：
4000 angstrom thickness films are deposited in the wafer substrate surface, institute's deposition film is carried out using the first photo etched mask
Photoetching is etched the film after photoetching, to form the 6th area of the pattern of 4000 angstroms of thickness in the wafer substrate surface；
4000 angstrom thickness films are deposited in the wafer substrate surface for being formed with the 6th area of the pattern so that the 6th area of the pattern
Thickness becomes 8000 angstroms, carries out photoetching to institute's deposition film using the second photo etched mask, is etched to the film after photoetching, with
In the 6th area of the pattern of the wafer substrate surface 8000 angstroms of thickness of formation and the 5th area of the pattern of 4000 angstroms of thickness；
2000 angstrom thickness films are deposited in the wafer substrate surface for being formed with the 6th area of the pattern and the 5th area of the pattern, are made
The 6th area of the pattern thickness become 10000 angstroms, the 5th area of the pattern thickness become 6000 angstroms, using third photo etched mask to institute
Deposition film carries out photoetching, is etched to the film after photoetching, in the wafer substrate surface 10000 angstroms of thickness of formation
4th area of the pattern of the 6th area of the pattern, the 5th area of the pattern of 6000 angstroms of thickness and 2000 angstroms of thickness；
120 angstrom thickness films are formed in the wafer substrate surface using thermal oxidation process, use the 4th photo etched mask pair
Institute's deposition film carries out photoetching, is etched to the film after photoetching, in the wafer substrate surface 120 angstroms of thickness of formation
Third area of the pattern；
45 angstrom thickness films are formed in the wafer substrate surface using thermal oxidation process, using the 5th photo etched mask to institute
Deposition film carries out photoetching, is etched to the film after photoetching, to form the of 45 angstroms of thickness in the wafer substrate surface
Two area of the pattern；
20 angstrom thickness films are formed in the wafer substrate surface using thermal oxidation process, using the 6th photo etched mask to institute
Deposition film carries out photoetching, is etched to the film after photoetching, to form the of 20 angstroms of thickness in the wafer substrate surface
One area of the pattern.
From said program as can be seen that the semiconductor film thickness measuring calibration standard film and its manufacturing method of the present invention, real
The area of the pattern for forming multiple level of thickness on a piece of standard film is showed, and then may be used with a piece of standard film to multiple
Level of thickness is calibrated.Compared with prior art, the present invention can save the spending of purchase standard film, improve film thickness amount
Board is surveyed to the measurement utilization rate of product and the working efficiency of operating personnel, while also reducing the fragmentation probability of standard wafer
With the efficiency of management and control.
Description of the drawings
Fig. 1 is the embodiment schematic diagram that semiconductor film thickness measuring of the present invention calibrates standard film；
Fig. 2A is the first photo etched mask employed in semiconductor film thickness measuring of the present invention calibration standard piece making method
Embodiment schematic diagram；
Fig. 2 B are the second photo etched mask employed in semiconductor film thickness measuring of the present invention calibration standard piece making method
Embodiment schematic diagram；
Fig. 2 C are the third photo etched mask employed in semiconductor film thickness measuring of the present invention calibration standard piece making method
Embodiment schematic diagram；
Fig. 2 D are the 4th photo etched mask employed in semiconductor film thickness measuring of the present invention calibration standard piece making method
Embodiment schematic diagram；
Fig. 2 E are the 5th photo etched mask employed in semiconductor film thickness measuring of the present invention calibration standard piece making method
Embodiment schematic diagram；
Fig. 2 F are the 6th photo etched mask employed in semiconductor film thickness measuring of the present invention calibration standard piece making method
Embodiment schematic diagram；
Fig. 3 is the embodiment flow chart that semiconductor film thickness measuring of the present invention calibrates standard piece making method.
Specific implementation mode
In order to make the purpose , technical scheme and advantage of the present invention be clearer, develop simultaneously embodiment referring to the drawings,
Invention is further described in detail.
Semiconductor film thickness measuring provided by the invention calibration standard film includes wafer substrate and is located at the wafer base
The area of the pattern of at least two difference film thickness grade on piece surface.Wherein, the quantity of area of the pattern can be measured according to film thickness
Board and the needs of measured film thickness are adjusted, those skilled in the art can be according to the introduction of following embodiment
In conjunction with state of the art, the area of the pattern of embodiment is expanded or narrows down to required quantity, for each pattern
Position of the region on the wafer substrate can also be with the following Examples introduction combination state of the art appointed
Meaning adjustment, no longer additionally repeats below.
In the semiconductor film thickness measuring calibration standard film of the present invention, the area of the pattern is N number of, N >=2, each pattern
The thickness in region is each unequal, and in N number of area of the pattern, the thickness of the n-th area of the pattern is the n-th thickness, wherein 1≤n≤N.It is described
N number of area of the pattern is distributed evenly in around the wafer substrate center, and N number of area of the pattern is apart from the wafer base
Piece center is equal.The distance of center to the origin of each area of the pattern is 45mm~55mm.With the wafer substrate
Center be origin polar coordinates in, it is polar between two area of the pattern of the arbitrary neighborhood in N number of area of the pattern
The difference of angle is equal.
Below using 6 area of the pattern as embodiment（N=6,1≤n≤6）, the semiconductor film thickness measuring of the present invention is calibrated
Standard film is described in detail.
6 area of the pattern are respectively：First area of the pattern, thickness are first thickness；Second area of the pattern is thick
Degree is second thickness；Third area of the pattern, thickness are third thickness；4th area of the pattern, thickness are the 4th thickness；5th
Area of the pattern, thickness are the 5th thickness；6th area of the pattern, thickness are the 6th thickness；Wherein, the first thickness is 10
~30 angstroms, preferably 20 angstroms, the second thickness are 35~55 angstroms, and preferably 45 angstroms, the third thickness is 100~150 angstroms,
Preferably 120 angstroms, the 4th thickness is 1000~3000 angstroms, and preferably 2000 angstroms, the 5th thickness is 5000~7000
Angstrom, preferably 6000 angstroms, the 6th thickness is 8000~12000 angstroms, preferably 10000 angstroms.
It is described in semiconductor film thickness measuring calibration standard film embodiment and its manufacturing method embodiment provided by the invention
Wafer substrate is silicon chip, and shape is circle, and the area of the pattern material is silica.
As shown in Figure 1, standard film embodiment schematic diagram is calibrated for semiconductor film thickness measuring provided by the invention, wherein wrapping
Wafer substrate 1 and the area of the pattern of 6 different film thickness grades positioned at 1 surface of wafer substrate are included, wherein 6 different films
The area of the pattern of thick grade is respectively：First area of the pattern 21, thickness are 20 angstroms；Second area of the pattern 22, thickness 45
Angstrom；Third area of the pattern 23, thickness are 120 angstroms；4th area of the pattern 24, thickness are 2000 angstroms；5th area of the pattern 25,
Its thickness is 6000 angstroms；6th area of the pattern 26, thickness are 10000 angstroms.All area of the pattern are rounded, a diameter of
35mm~45mm（Millimeter）, it is therefore preferable to 40mm.
Polar coordinate system is established as origin using the center of the wafer substrate 1, then 6 area of the pattern are in the wafer base
The distributing position coordinate on 1 surface of piece is respectively：150 degree of first area of the pattern, 21 angle；210 degree of second area of the pattern, 22 angle；
270 degree of 23 angle of third area of the pattern；330 degree of 4th area of the pattern, 24 angle；30 degree of 5th area of the pattern, 25 angle；6th figure
90 degree of 26 angle of case region；The distance of center to the origin of each area of the pattern is 45mm~55mm, it is therefore preferable to 50mm.
As shown in Figure 1, the semiconductor film thickness measuring of the present invention calibrates point of each area of the pattern in standard film embodiment
Cloth be it is a kind of using the center of wafer substrate 1 as the center of circle axisymmetricly be uniformly distributed form, the setting of this distribution be in order to
It is calibrated convenient for the thickness of film thickness measurement platform, when being calibrated, film thickness measurement platform is only needed with the wafer base
The center of piece 1 is that axle center rotates the calibration that thickness can be completed in the wafer substrate 1.Certainly, the present invention is claimed partly leads
The distribution of each pattern is not only limited to embodiment shown in FIG. 1 in body film thickness measurement calibration standard film, according to film thickness
Other distribution forms may be used in the distribution of the demand of measurement platform, each area of the pattern, such as are of a straight line type distribution, cross
Distribution, duplicate rows distribution etc..
The manufacturing method of semiconductor film thickness measuring calibration standard film of the present invention, including：
One wafer substrate is provided；
The area of the pattern of at least two difference film thickness grade is grown in the wafer substrate surface.
Wherein, the area of the pattern is N number of, N >=2, and the thickness of each area of the pattern is each unequal, in N number of area of the pattern,
The thickness of n-th area of the pattern is the n-th thickness, wherein 1≤n≤N.N number of area of the pattern is distributed evenly in the wafer base
Around piece center, and N number of area of the pattern is equal apart from the wafer substrate center.The center of each area of the pattern is arrived
The distance of origin is 45mm~55mm.Using the center of the wafer substrate as in the polar coordinates of origin, N number of pattern area
The difference of polar angle between two area of the pattern of the arbitrary neighborhood in domain is equal.
Photoetching used by the photolithographic stage of the area of the pattern of N number of different film thickness grades is grown in the wafer substrate surface
Mask is N number of；Wherein, there is the first photo etched mask N masked areas, N photo etched masks to have from the first masked areas to N
Whole masked areas of masked areas, the n-th photo etched mask have from N-N+1 masked areas to N masked areas；All
In N number of masked areas, the n-th masked areas is consistent with the position of the n-th area of the pattern.
The area of the pattern of N number of different film thickness grades is grown in the wafer substrate surface, including：
The wafer substrate surface carry out first time film deposition, and using the first photo etched mask to institute's deposition film into
Row photoetching is etched the film after photoetching, to form N area of the pattern in the wafer substrate surface；
N-th film deposition is carried out in the wafer substrate surface, and institute's deposition film is carried out using the n-th photo etched mask
Photoetching is etched the film after photoetching, to form N-N+1 masked areas to N masks in the wafer substrate surface
Region；
N-th film deposition is carried out in the wafer substrate surface, and institute's deposition film is carried out using N photo etched masks
Photoetching is etched the film after photoetching, to form the first masked areas to N masked areas in the wafer substrate surface
Whole masked areas.
Below in conjunction with specific embodiment, the manufacture of standard film embodiment is calibrated to semiconductor film thickness measuring shown in FIG. 1
Method is further elaborated.
When manufacturing semiconductor film thickness measuring calibration standard film shown in FIG. 1, needed in the fabrication process in the wafer
1 surface of substrate grows the area of the pattern of 6 different film thickness grades, needs to use means of photolithography before and after growing film to cook up
Each area of the pattern, the photo etched mask used by photolithographic stage are 6.Implement with reference to 6 photo etched masks of Fig. 2A to Fig. 2 F
Shown in example, 6 photo etched masks are respectively the first photo etched mask 31, the second photo etched mask 32, third photo etched mask 33, the 4th light
Mask 34, the 5th photo etched mask 35, the 6th photo etched mask 36 are carved, photo etched mask is circle.Wherein, as shown in Figure 2 A, first
Photo etched mask 31 has the 6th masked areas 46；As shown in Figure 2 B, the second photo etched mask 32 has the 5th masked areas the 45, the 6th
Masked areas 46；As shown in Figure 2 C, there is third photo etched mask 33 the 4th masked areas 44, the 5th masked areas the 45, the 6th to cover
Diaphragm area 46；As shown in Figure 2 D, the 4th photo etched mask 34 has third masked areas 43, the 4th masked areas 44, the 5th mask
Region 45, the 6th masked areas 46；As shown in Figure 2 E, the 5th photo etched mask 35 has the second masked areas 42, third mask regions
Domain 43, the 4th masked areas 44, the 5th masked areas 45, the 6th masked areas 46；As shown in Figure 2 F, the 6th photo etched mask 36 has
Have the first masked areas 41, the second masked areas 42, third masked areas 43, the 4th masked areas 44, the 5th masked areas 45,
6th masked areas 46.Wherein, in the first photo etched mask 31, the 6th masked areas 46 is with first photo etched mask 31
Center is that polar angle of origin is 90 degree；In second photo etched mask 32, each masked areas is covered with second photoetching
The center of film 32 is that polar angle of origin is respectively：90 degree of 6th masked areas, 46 angle, 45 jiaos of the 5th masked areas
30 degree of degree；In third photo etched mask 33, each masked areas is using the center of the third photo etched mask 33 as the polar coordinates of origin
Angle be respectively：90 degree of 6th masked areas, 46 angle, 30 degree of 45 angle of the 5th masked areas, 44 angle of the 4th masked areas
330 degree；In 4th photo etched mask 34, each masked areas is using the center of the 4th photo etched mask 34 as the polar of origin
Angle is respectively：90 degree of 6th masked areas, 46 angle, 30 degree of 45 angle of the 5th masked areas, 44 angle of the 4th masked areas
330 degree, 270 degree of 43 angle of third masked areas；In 5th photo etched mask 35, each masked areas is with the 5th photo etched mask
35 center is that polar angle of origin is respectively：90 degree of 6th masked areas, 46 angle, 45 angle of the 5th masked areas
30 degree, 330 degree of 44 angle of the 4th masked areas, 270 degree of 43 angle of third masked areas, 210 degree of 42 angle of the second masked areas；
In 6th photo etched mask 36, each masked areas is using the center of the 6th photo etched mask 36 as polar angle of origin point
It is not：90 degree of 6th masked areas, 46 angle, 30 degree of 45 angle of the 5th masked areas, 330 degree of 44 angle of the 4th masked areas,
270 degree of three masked areas, 43 angle, 210 degree of 42 angle of the second masked areas, 150 degree of 41 angle of the first masked areas.
Each masked areas and the position of each area of the pattern are one it can be seen from Fig. 2A to Fig. 2 F and Fig. 1 comparisons
One is corresponding.
As shown in figure 3, the embodiment flow chart of standard piece making method is calibrated for semiconductor film thickness measuring of the present invention, it should
Flow is the flow of manufacture semiconductor film thickness measuring calibration standard film shown in FIG. 1, and this method includes：
Step 1 deposits 4000 angstrom thickness films on 1 surface of wafer substrate, using the first photo etched mask 31 to deposited thin
Film carries out photoetching, is etched to the film after photoetching, to form the 6th figure of 4000 angstroms of thickness on 1 surface of wafer substrate
Case region 26.This step 1 uses LPCVD（Low Pressure Chemical Vapor Deposition, low pressure chemical phase
Deposition）Processing procedure carries out film（Material is silica）Deposition, parameter setting is for example：400 DEG C of temperature of control, 4 support of pressure, instead
It is TEOS to answer gas（Tetraethylorthosilicate, tetraethyl orthosilicate）And oxygen, 30 seconds duration.
Step 2 deposits 4000 angstrom thickness films on 1 surface of wafer substrate for being formed with the 6th area of the pattern 26 so that the
Six area of the pattern, 26 thickness becomes 8000 angstroms, photoetching is carried out to institute's deposition film using the second photo etched mask 32, after photoetching
Film is etched, to form the 6th area of the pattern 26 and 4000 angstroms of thickness of 8000 angstroms of thickness on 1 surface of wafer substrate
5th area of the pattern 25 of degree.Identical as step 1, this step 2 also uses the deposition of LPCVD processing procedures progress film, parameter setting
Such as：400 DEG C of temperature, 4 support of pressure are controlled, reaction gas is TEOS and oxygen, 30 seconds duration.
Step 3 deposits 2000 angstroms in the wafer substrate surface for being formed with the 6th area of the pattern 26 and the 5th area of the pattern 25
Thickness thin film so that 26 thickness of the 6th area of the pattern become 10000 angstroms, 25 thickness of the 5th area of the pattern become 6000 angstroms, use
Third photo etched mask 33 carries out photoetching to institute's deposition film, is etched to the film after photoetching, in 1 table of wafer substrate
Face forms the 5th area of the pattern 25 and 2000 angstroms of thickness of 26,6000 angstroms of thickness of the 6th area of the pattern of 10000 angstroms of thickness
4th area of the pattern 24.This step 3 also uses LPCVD processing procedures to carry out the deposition of film, and parameter setting is for example：Control temperature 400
DEG C, 4 support of pressure, reaction gas is TEOS and oxygen, 15 seconds duration.
Step 4, using thermal oxidation process（RTO）120 angstrom thickness films are formed on 1 surface of wafer substrate, use the
Four photo etched masks 34 carry out photoetching to institute's deposition film, are etched to the film after photoetching, on 1 surface of wafer substrate
Form the third area of the pattern 23 of 120 angstroms of thickness.The parameter setting of thermal oxidation process is for example in this step 4：Control temperature 920
DEG C, it is passed through dioxygen oxidation 45 minutes.
Step 5 forms 45 angstrom thickness films using thermal oxidation process on 1 surface of wafer substrate, uses the 5th photoetching
Mask 35 carries out photoetching to institute's deposition film, is etched to the film after photoetching, to form 45 on 1 surface of wafer substrate
Second area of the pattern 22 of angstrom thickness.The parameter setting of thermal oxidation process is for example in this step 5：800 DEG C of temperature is controlled, oxygen is passed through
Gas aoxidizes 20 minutes.
Step 6 forms 20 angstrom thickness films using thermal oxidation process on 1 surface of wafer substrate, uses the 6th photoetching
Mask 36 carries out photoetching to institute's deposition film, is etched to the film after photoetching, to form 20 on 1 surface of wafer substrate
First area of the pattern 21 of angstrom thickness.The parameter setting of thermal oxidation process is for example in this step 6：850 DEG C of temperature is controlled, oxygen is passed through
Gas aoxidizes 10 minutes.
By above-mentioned steps, the manufacture of semiconductor film thickness measuring calibration standard film is just completed, elder generation can be finally passed through
Into thickness measuring instrument to obtain the exact thickness of each area of the pattern.
Every technique employed in the above method, those skilled in the art can realize have by common technology means
Body technology parameter can not further limit the parameter of each technique herein depending on actual demand.
The semiconductor film thickness measuring calibration standard film and its manufacturing method of the present invention, realizes on a piece of standard film
The area of the pattern of multiple level of thickness is formed, and then may be used and multiple level of thickness are calibrated with a piece of standard film.With
The prior art is compared, and the present invention can save the spending of purchase standard film, improve measurement of the film thickness measurement platform to product
The working efficiency of utilization rate and operating personnel, while also reducing the fragmentation probability of standard wafer and the efficiency of management and control.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
With within principle, any modification, equivalent substitution, improvement and etc. done should be included within the scope of protection of the invention god.
Claims (13)
1. a kind of semiconductor film thickness measuring calibrates standard film, which is characterized in that including：
Wafer substrate；
Positioned at the area of the pattern of 6 different film thickness grades of the wafer substrate surface, the area of the pattern is rounded；
6 area of the pattern are distributed evenly in around the wafer substrate center, and 6 area of the pattern are apart from institute
Wafer substrate center is stated to be equal；
Wherein, 6 area of the pattern are respectively：
First area of the pattern, thickness are first thickness；
Second area of the pattern, thickness are second thickness；
Third area of the pattern, thickness are third thickness；
4th area of the pattern, thickness are the 4th thickness；
5th area of the pattern, thickness are the 5th thickness；
6th area of the pattern, thickness are the 6th thickness.
2. standard film according to claim 1, it is characterised in that：The wafer substrate is silicon chip, the area of the pattern
Material is silica.
3. standard film according to claim 1, it is characterised in that：A diameter of 35mm~the 45mm of area of the pattern.
4. standard film according to claim 1, it is characterised in that：The thickness of each area of the pattern is each unequal.
5. standard film according to claim 1, it is characterised in that：Each the distance of center to the origin of area of the pattern is
45mm~55mm.
6. standard film according to claim 1, it is characterised in that：It is sat by the pole of origin of the center of the wafer substrate
In mark, the difference of polar angle between two area of the pattern of the arbitrary neighborhood in 6 area of the pattern is equal.
7. standard film according to any one of claims 1 to 6, it is characterised in that：
The first thickness is 10~30 angstroms, and the second thickness is 35~55 angstroms, and the third thickness is 100~150 angstroms, institute
It is 1000~3000 angstroms to state the 4th thickness, and the 5th thickness is 5000~7000 angstroms, and the 6th thickness is 8000~12000
Angstrom.
8. a kind of manufacturing method of semiconductor film thickness measuring calibration standard film, including：
One wafer substrate is provided；
The area of the pattern of 6 different film thickness grades is grown in the wafer substrate surface, the area of the pattern is rounded；
6 area of the pattern are distributed evenly in around the wafer substrate center, and 6 area of the pattern are apart from institute
Wafer substrate center is stated to be equal；
Wherein, 6 area of the pattern are respectively：
First area of the pattern, thickness are first thickness；
Second area of the pattern, thickness are second thickness；
Third area of the pattern, thickness are third thickness；
4th area of the pattern, thickness are the 4th thickness；
5th area of the pattern, thickness are the 5th thickness；
6th area of the pattern, thickness are the 6th thickness.
9. according to the method described in claim 8, it is characterized in that：The thickness of each area of the pattern is each unequal.
10. according to the method described in claim 8, it is characterized in that：Each the distance of center to the origin of area of the pattern is
45mm~55mm.
11. according to the method described in claim 8, it is characterized in that：It is sat by the pole of origin of the center of the wafer substrate
In mark, the difference of polar angle between two area of the pattern of the arbitrary neighborhood in 6 area of the pattern is equal.
12. according to claim 8 to 11 any one of them method, it is characterised in that：
Photo etched mask used by the photolithographic stage of the area of the pattern of 6 different film thickness grades is grown in the wafer substrate surface
Be 6, respectively the first photo etched mask, the second photo etched mask, third photo etched mask, the 4th photo etched mask, the 5th photo etched mask,
6th photo etched mask；Wherein,
First photo etched mask has the 6th masked areas；
Second photo etched mask has the 5th masked areas, the 6th masked areas；
Third photo etched mask has the 4th masked areas, the 5th masked areas, the 6th masked areas；
4th photo etched mask has third masked areas, the 4th masked areas, the 5th masked areas, the 6th masked areas；
5th photo etched mask has the second masked areas, third masked areas, the 4th masked areas, the 5th masked areas, the 6th
Masked areas；
6th photo etched mask has the first masked areas, the second masked areas, third masked areas, the 4th masked areas, the 5th
Masked areas, the 6th masked areas；
In 6 all masked areas, the n-th masked areas is consistent with the position of the n-th area of the pattern, wherein 1≤n≤N.
13. according to the method for claim 12, which is characterized in that grow 6 different film thickness in the wafer substrate surface
The area of the pattern of grade, including：
4000 angstrom thickness films are deposited in the wafer substrate surface, light is carried out to institute's deposition film using the first photo etched mask
It carves, the film after photoetching is etched, to form the 6th area of the pattern of 4000 angstroms of thickness in the wafer substrate surface；
4000 angstrom thickness films are deposited in the wafer substrate surface for being formed with the 6th area of the pattern so that the 6th area of the pattern thickness
Become 8000 angstroms, photoetching is carried out to institute's deposition film using the second photo etched mask, the film after photoetching is etched, in institute
State the 6th area of the pattern of wafer substrate surface 8000 angstroms of thickness of formation and the 5th area of the pattern of 4000 angstroms of thickness；
2000 angstrom thickness films are deposited in the wafer substrate surface for being formed with the 6th area of the pattern and the 5th area of the pattern so that the
Six area of the pattern thickness become 10000 angstroms, the 5th area of the pattern thickness become 6000 angstroms, using third photo etched mask to being deposited
Film carries out photoetching, is etched to the film after photoetching, to form the 6th of 10000 angstroms of thickness the in the wafer substrate surface
4th area of the pattern of area of the pattern, the 5th area of the pattern of 6000 angstroms of thickness and 2000 angstroms of thickness；
120 angstrom thickness films are formed in the wafer substrate surface using thermal oxidation process, using the 4th photo etched mask to sinking
Product film carries out photoetching, is etched to the film after photoetching, to form the third of 120 angstroms of thickness in the wafer substrate surface
Area of the pattern；
45 angstrom thickness films are formed in the wafer substrate surface using thermal oxidation process, using the 5th photo etched mask to being deposited
Film carries out photoetching, is etched to the film after photoetching, to form the second figure of 45 angstroms of thickness in the wafer substrate surface
Case region；
20 angstrom thickness films are formed in the wafer substrate surface using thermal oxidation process, using the 6th photo etched mask to being deposited
Film carries out photoetching, is etched to the film after photoetching, to form the first figure of 20 angstroms of thickness in the wafer substrate surface
Case region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310695221.0A CN104716125B (en) | 2013-12-17 | 2013-12-17 | Semiconductor film thickness measuring calibrates standard film and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310695221.0A CN104716125B (en) | 2013-12-17 | 2013-12-17 | Semiconductor film thickness measuring calibrates standard film and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104716125A CN104716125A (en) | 2015-06-17 |
| CN104716125B true CN104716125B (en) | 2018-11-02 |
Family
ID=53415295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310695221.0A Active CN104716125B (en) | 2013-12-17 | 2013-12-17 | Semiconductor film thickness measuring calibrates standard film and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104716125B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109817685B (en) * | 2019-02-01 | 2021-05-07 | 武汉华星光电半导体显示技术有限公司 | OLED pixel structure and display device |
| CN110473909B (en) * | 2019-08-29 | 2023-06-09 | 上海华力微电子有限公司 | Standard wafer and method for manufacturing the same |
| CN112985330A (en) * | 2021-02-07 | 2021-06-18 | 西安交通大学 | Preparation method of wafer-level film thickness standard sheet for online instrument calibration |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101842677A (en) * | 2007-09-07 | 2010-09-22 | 马特森技术公司 | Calibration substrate and calibration steps |
| CN101877344A (en) * | 2009-04-30 | 2010-11-03 | 中芯国际集成电路制造(上海)有限公司 | Connection hole test structure and method for preparing transmission electron microscopy |
| CN102005436A (en) * | 2009-09-01 | 2011-04-06 | 中芯国际集成电路制造(上海)有限公司 | Measurement calibrating wafer |
-
2013
- 2013-12-17 CN CN201310695221.0A patent/CN104716125B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101842677A (en) * | 2007-09-07 | 2010-09-22 | 马特森技术公司 | Calibration substrate and calibration steps |
| CN101877344A (en) * | 2009-04-30 | 2010-11-03 | 中芯国际集成电路制造(上海)有限公司 | Connection hole test structure and method for preparing transmission electron microscopy |
| CN102005436A (en) * | 2009-09-01 | 2011-04-06 | 中芯国际集成电路制造(上海)有限公司 | Measurement calibrating wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104716125A (en) | 2015-06-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104716125B (en) | Semiconductor film thickness measuring calibrates standard film and its manufacturing method | |
| TWI276158B (en) | Controlling system for gate formation of semiconductor devices | |
| US9273414B2 (en) | Epitaxial growth apparatus and epitaxial growth method | |
| JP2010040534A (en) | Susceptor, vapor phase growth apparatus, and method of manufacturing epitaxial wafer | |
| CN106449408A (en) | Method of manufacturing semiconductor device | |
| KR101799839B1 (en) | Method for manufacturing epitaxial wafer | |
| JP2014089403A (en) | Method for fabricating semiconductor optical element | |
| JP2014127595A (en) | Eccentricity evaluation method and manufacturing method of epitaxial wafer | |
| JP3897963B2 (en) | Semiconductor wafer and manufacturing method thereof | |
| JP6132163B2 (en) | Eccentricity evaluation method and epitaxial wafer manufacturing method | |
| US7861421B2 (en) | Method for measuring rotation angle of bonded wafer | |
| US20110207247A1 (en) | Method of correcting overlay and semiconductor device manufacturing method using the same | |
| CN107302348A (en) | Surface acoustic wave device and its manufacture method, temperature testing equipment | |
| CN100539119C (en) | The formation method of test base, test base mask and test base | |
| CN103295880B (en) | The modified node method and preparation method thereof of control wafer and using method in a kind of polycrystalline silicon furnace tube technique | |
| JP2010028011A (en) | Method for measuring thickness of epitaxial layer, method for manufacturing epitaxial wafer and method for controlling manufacturing process of epitaxial wafer | |
| CN111489964A (en) | Preparation method of thick-layer silicon epitaxial wafer for reducing pattern drift rate | |
| KR102550456B1 (en) | Method for evaluating wafer and method for manufacturing epitaxial wafer | |
| JP3962509B2 (en) | Vapor growth equipment | |
| TW200910416A (en) | Temperature setting method for heat treatment plate, computer-readable recording medium having stored program, and temperature setting device for heat treatment plate | |
| TW201643477A (en) | Spectral gradient filter production using surface applied array optimized 3D shadow masks | |
| JP2011014800A (en) | Method for measuring film thickness of epitaxial layer, method for manufacturing epitaxial wafer, and method for controlling manufacturing process of epitaxial wafer | |
| CN102376542A (en) | Production method of fine pattern of semiconductor | |
| JP2023023081A (en) | Sic epitaxial wafer and method for manufacturing sic epitaxial wafer | |
| CN110331386A (en) | The method of film is formed on a semiconductor wafer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |