CN101872713B - 静电夹盘装置、等离子处理装置和制造静电夹盘装置的方法 - Google Patents
静电夹盘装置、等离子处理装置和制造静电夹盘装置的方法 Download PDFInfo
- Publication number
- CN101872713B CN101872713B CN200910049953.6A CN200910049953A CN101872713B CN 101872713 B CN101872713 B CN 101872713B CN 200910049953 A CN200910049953 A CN 200910049953A CN 101872713 B CN101872713 B CN 101872713B
- Authority
- CN
- China
- Prior art keywords
- electrostatic chuck
- support portion
- chuck device
- dielectric material
- support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 238000012545 processing Methods 0.000 title abstract description 11
- 239000003989 dielectric material Substances 0.000 claims abstract description 24
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 19
- 238000009832 plasma treatment Methods 0.000 claims description 17
- 229910017083 AlN Inorganic materials 0.000 claims description 11
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 11
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000741 silica gel Substances 0.000 claims description 6
- 229910002027 silica gel Inorganic materials 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 description 12
- 239000013078 crystal Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 239000004567 concrete Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (20)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200910049953.6A CN101872713B (zh) | 2009-04-24 | 2009-04-24 | 静电夹盘装置、等离子处理装置和制造静电夹盘装置的方法 |
US12/502,988 US20100271745A1 (en) | 2009-04-24 | 2009-07-14 | Electrostatic chuck and base for plasma reactor having improved wafer etch rate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200910049953.6A CN101872713B (zh) | 2009-04-24 | 2009-04-24 | 静电夹盘装置、等离子处理装置和制造静电夹盘装置的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101872713A CN101872713A (zh) | 2010-10-27 |
CN101872713B true CN101872713B (zh) | 2012-03-28 |
Family
ID=42991917
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200910049953.6A Active CN101872713B (zh) | 2009-04-24 | 2009-04-24 | 静电夹盘装置、等离子处理装置和制造静电夹盘装置的方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20100271745A1 (zh) |
CN (1) | CN101872713B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI574294B (zh) * | 2013-12-25 | 2017-03-11 | A method of manufacturing a plasma processing chamber and an electrostatic chuck thereof | |
TWI578365B (zh) * | 2013-12-25 | 2017-04-11 | A method of manufacturing a plasma processing chamber and an electrostatic chuck thereof |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103843128B (zh) * | 2011-09-30 | 2017-11-21 | 应用材料公司 | 静电夹具 |
US9324589B2 (en) * | 2012-02-28 | 2016-04-26 | Lam Research Corporation | Multiplexed heater array using AC drive for semiconductor processing |
CN104733364B (zh) * | 2013-12-23 | 2017-11-03 | 中微半导体设备(上海)有限公司 | 一种静电夹盘 |
US10490435B2 (en) * | 2018-02-07 | 2019-11-26 | Applied Materials, Inc. | Cooling element for an electrostatic chuck assembly |
US10714329B2 (en) * | 2018-09-28 | 2020-07-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pre-clean for contacts |
CN112599463B (zh) * | 2019-10-02 | 2024-01-19 | 佳能株式会社 | 晶片卡盘、其生产方法和曝光装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4744855B2 (ja) * | 2003-12-26 | 2011-08-10 | 日本碍子株式会社 | 静電チャック |
US7697260B2 (en) * | 2004-03-31 | 2010-04-13 | Applied Materials, Inc. | Detachable electrostatic chuck |
US8284538B2 (en) * | 2006-08-10 | 2012-10-09 | Tokyo Electron Limited | Electrostatic chuck device |
US7672111B2 (en) * | 2006-09-22 | 2010-03-02 | Toto Ltd. | Electrostatic chuck and method for manufacturing same |
US8149562B2 (en) * | 2007-03-09 | 2012-04-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | System for decharging a wafer or substrate after dechucking from an electrostatic chuck |
-
2009
- 2009-04-24 CN CN200910049953.6A patent/CN101872713B/zh active Active
- 2009-07-14 US US12/502,988 patent/US20100271745A1/en not_active Abandoned
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI574294B (zh) * | 2013-12-25 | 2017-03-11 | A method of manufacturing a plasma processing chamber and an electrostatic chuck thereof | |
TWI578365B (zh) * | 2013-12-25 | 2017-04-11 | A method of manufacturing a plasma processing chamber and an electrostatic chuck thereof |
Also Published As
Publication number | Publication date |
---|---|
US20100271745A1 (en) | 2010-10-28 |
CN101872713A (zh) | 2010-10-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Electrostatic chuck device, plasma processing device and method for manufacturing electrostatic chuck device Effective date of registration: 20150202 Granted publication date: 20120328 Pledgee: China Development Bank Co Pledgor: Advanced Micro-Fabrication Equipment (Shanghai) Inc. Registration number: 2009310000663 |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20170809 Granted publication date: 20120328 Pledgee: China Development Bank Co Pledgor: Advanced Micro-Fabrication Equipment (Shanghai) Inc. Registration number: 2009310000663 |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
CP03 | Change of name, title or address |
Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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CP03 | Change of name, title or address |