CN101857774A - 一种提高硅衬底化学机械抛光速率的抛光组合物及其应用 - Google Patents
一种提高硅衬底化学机械抛光速率的抛光组合物及其应用 Download PDFInfo
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- CN101857774A CN101857774A CN201010189172A CN201010189172A CN101857774A CN 101857774 A CN101857774 A CN 101857774A CN 201010189172 A CN201010189172 A CN 201010189172A CN 201010189172 A CN201010189172 A CN 201010189172A CN 101857774 A CN101857774 A CN 101857774A
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- Prior art keywords
- polishing composition
- polishing
- silicon
- fluorion
- value
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- 238000005498 polishing Methods 0.000 title claims abstract description 110
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 53
- 239000010703 silicon Substances 0.000 title claims abstract description 53
- 239000000203 mixture Substances 0.000 title claims abstract description 43
- 239000000758 substrate Substances 0.000 title claims abstract description 10
- 239000000126 substance Substances 0.000 title abstract 2
- 239000012535 impurity Substances 0.000 claims abstract description 15
- 239000003082 abrasive agent Substances 0.000 claims abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000003795 chemical substances by application Substances 0.000 claims description 15
- 230000003750 conditioning effect Effects 0.000 claims description 13
- 239000002245 particle Substances 0.000 claims description 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 13
- 150000007530 organic bases Chemical group 0.000 claims description 10
- 230000001105 regulatory effect Effects 0.000 claims description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- NSOXQYCFHDMMGV-UHFFFAOYSA-N Tetrakis(2-hydroxypropyl)ethylenediamine Chemical group CC(O)CN(CC(C)O)CCN(CC(C)O)CC(C)O NSOXQYCFHDMMGV-UHFFFAOYSA-N 0.000 claims description 5
- GTDKXDWWMOMSFL-UHFFFAOYSA-M tetramethylazanium;fluoride Chemical compound [F-].C[N+](C)(C)C GTDKXDWWMOMSFL-UHFFFAOYSA-M 0.000 claims description 5
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical group [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 claims description 4
- KGWDUNBJIMUFAP-KVVVOXFISA-N Ethanolamine Oleate Chemical compound NCCO.CCCCCCCC\C=C/CCCCCCCC(O)=O KGWDUNBJIMUFAP-KVVVOXFISA-N 0.000 claims description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 3
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 3
- 229910052728 basic metal Inorganic materials 0.000 claims description 3
- 150000003818 basic metals Chemical class 0.000 claims description 3
- 125000001453 quaternary ammonium group Chemical group 0.000 claims description 3
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052775 Thulium Inorganic materials 0.000 claims description 2
- 239000008346 aqueous phase Substances 0.000 claims description 2
- LFANJFLKPFQSAT-UHFFFAOYSA-M azane tetrabutylazanium hydroxide Chemical compound N.[OH-].CCCC[N+](CCCC)(CCCC)CCCC LFANJFLKPFQSAT-UHFFFAOYSA-M 0.000 claims description 2
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 claims description 2
- 229960001231 choline Drugs 0.000 claims description 2
- 150000003141 primary amines Chemical class 0.000 claims description 2
- 150000003242 quaternary ammonium salts Chemical class 0.000 claims description 2
- 150000003335 secondary amines Chemical class 0.000 claims description 2
- 150000003512 tertiary amines Chemical class 0.000 claims description 2
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims description 2
- QSUJAUYJBJRLKV-UHFFFAOYSA-M tetraethylazanium;fluoride Chemical compound [F-].CC[N+](CC)(CC)CC QSUJAUYJBJRLKV-UHFFFAOYSA-M 0.000 claims description 2
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims description 2
- FAGUFWYHJQFNRV-UHFFFAOYSA-N tetraethylenepentamine Chemical compound NCCNCCNCCNCCN FAGUFWYHJQFNRV-UHFFFAOYSA-N 0.000 claims description 2
- 229960001124 trientine Drugs 0.000 claims description 2
- 239000003513 alkali Substances 0.000 abstract description 12
- 229910052751 metal Inorganic materials 0.000 abstract description 12
- 239000002184 metal Substances 0.000 abstract description 12
- 230000000694 effects Effects 0.000 abstract description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 abstract description 3
- 238000004140 cleaning Methods 0.000 abstract description 3
- 239000007788 liquid Substances 0.000 abstract description 3
- 230000002411 adverse Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 abstract 1
- 239000012530 fluid Substances 0.000 description 28
- 238000000034 method Methods 0.000 description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- 238000012360 testing method Methods 0.000 description 10
- 230000007797 corrosion Effects 0.000 description 7
- 238000005260 corrosion Methods 0.000 description 7
- 238000000227 grinding Methods 0.000 description 7
- 239000000356 contaminant Substances 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 229910021529 ammonia Inorganic materials 0.000 description 5
- 229910052500 inorganic mineral Inorganic materials 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 239000011707 mineral Substances 0.000 description 5
- 238000003756 stirring Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000013543 active substance Substances 0.000 description 3
- 125000003368 amide group Chemical group 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 238000012356 Product development Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 229910001506 inorganic fluoride Inorganic materials 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- -1 oxygenant Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000003352 sequestering agent Substances 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229960001866 silicon dioxide Drugs 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical class F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
Claims (13)
Priority Applications (1)
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CN 201010189172 CN101857774B (zh) | 2010-06-01 | 2010-06-01 | 一种提高硅衬底化学机械抛光速率的抛光组合物及其应用 |
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CN 201010189172 CN101857774B (zh) | 2010-06-01 | 2010-06-01 | 一种提高硅衬底化学机械抛光速率的抛光组合物及其应用 |
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CN101857774A true CN101857774A (zh) | 2010-10-13 |
CN101857774B CN101857774B (zh) | 2013-12-25 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103897603A (zh) * | 2012-12-28 | 2014-07-02 | 上海新安纳电子科技有限公司 | 一种gst中性化学机械抛光液 |
CN107030583A (zh) * | 2017-03-21 | 2017-08-11 | 天津华海清科机电科技有限公司 | 硅衬底片抛光方法和装置 |
CN107993936A (zh) * | 2017-11-30 | 2018-05-04 | 北京创昱科技有限公司 | 衬底加工方法 |
Citations (5)
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EP1217651A1 (de) * | 2000-12-20 | 2002-06-26 | Bayer Ag | Saure Poliersuspension für das chemisch-mechanische Polieren von SiO2-Isolationsschichten |
CN1422314A (zh) * | 2000-04-11 | 2003-06-04 | 卡伯特微电子公司 | 用于优先除去氧化硅的系统 |
CN1648190A (zh) * | 2004-12-22 | 2005-08-03 | 中国科学院上海微系统与信息技术研究所 | 高介电材料钛酸锶钡化学机械抛光用的纳米抛光液 |
CN101326256A (zh) * | 2005-12-08 | 2008-12-17 | Lg化学株式会社 | 用于控制抛光选择性的辅助剂以及包含该辅助剂的化学机械抛光浆料 |
CN101451048A (zh) * | 2007-11-30 | 2009-06-10 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
-
2010
- 2010-06-01 CN CN 201010189172 patent/CN101857774B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1422314A (zh) * | 2000-04-11 | 2003-06-04 | 卡伯特微电子公司 | 用于优先除去氧化硅的系统 |
EP1217651A1 (de) * | 2000-12-20 | 2002-06-26 | Bayer Ag | Saure Poliersuspension für das chemisch-mechanische Polieren von SiO2-Isolationsschichten |
CN1648190A (zh) * | 2004-12-22 | 2005-08-03 | 中国科学院上海微系统与信息技术研究所 | 高介电材料钛酸锶钡化学机械抛光用的纳米抛光液 |
CN101326256A (zh) * | 2005-12-08 | 2008-12-17 | Lg化学株式会社 | 用于控制抛光选择性的辅助剂以及包含该辅助剂的化学机械抛光浆料 |
CN101451048A (zh) * | 2007-11-30 | 2009-06-10 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
Non-Patent Citations (1)
Title |
---|
《中国科学院上海微系统与信息技术研究所 博士后研究工作报告》 20070215 张楷亮 CMP纳米抛光液与抛光工艺相关技术研究 第23、40-47页 1-13 , * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103897603A (zh) * | 2012-12-28 | 2014-07-02 | 上海新安纳电子科技有限公司 | 一种gst中性化学机械抛光液 |
CN103897603B (zh) * | 2012-12-28 | 2016-09-28 | 上海新安纳电子科技有限公司 | 一种gst中性化学机械抛光液 |
CN107030583A (zh) * | 2017-03-21 | 2017-08-11 | 天津华海清科机电科技有限公司 | 硅衬底片抛光方法和装置 |
CN107993936A (zh) * | 2017-11-30 | 2018-05-04 | 北京创昱科技有限公司 | 衬底加工方法 |
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CN101857774B (zh) | 2013-12-25 |
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