CN101854127B - Main circuit structure of power converter - Google Patents

Abstract

A main circuit structure of a power converter is serially connected with a semiconductor device. The semiconductor modules integrally molded by the converter by removing a semiconductor device and its collector terminal and emitter terminal from the same direction, arranged in the same direction side are as one phase; and a plurality of semiconductor modules are plural phases. In a main circuit structure of a power converter, there are provided a positive-side conductor for connecting a collector terminal of the one semiconductor module with the positive electrode of its DC power supply, a negative-side conductor for connecting an emitter terminal of the other semiconductor module with the negative electrode of its DC power supply, and an AC-side conductor for connecting an emitter terminal of the one semiconductor module and a collector terminal of the other semiconductor module with its AC side, and the respective conductors are shaped respectively in the forms of flat plates to make them parallel with each other layeredly. The invention is characterized in that the semiconductor modules are arranged on the same side in a way that output terminals of the positive-side conductor and the negative-side conductor are formed in the same direction; the positive-side conductor and the AC-side conductor are arranged on the layer near the semiconductor and the negative-side conductor is arranged on the layer far away from the semiconductor.

Description

The circuit construction of electric power of power supply changeover device

The present invention relates to the circuit construction of electric power of power supply changeover device, the semiconductor device that this transducer utilization is used within comprising the universal industrial field of railway locomotive is converted to direct current alternating current or alternating current is converted to direct current.

Has various structures although be used for the semiconductor device of power supply changeover device power circuit, but the semiconductor device that is used for power circuit of the present invention is the semiconductor module block structure, it has collector terminal and the emitter terminal of drawing from same face side, and integrates with the injection molding agent.

In the electrical lead of common power supply changeover device power circuit, adopt growing not only but also narrow bus or electrical lead as Japanese patent gazette No.1-160373 (1989) as shown in.

Because the inductance of electrical lead in this structure is larger, therefore can generation current and the larger problem of voltage jump when semiconductor device opens or closes.

And in order to protect semiconductor device, needing to connect the buffer circuits of larger electric capacity, this makes the volume of device be difficult to dwindle.

In order to reduce inductance, the total line by forming flat structures and provide the total line that comes and goes adjacent to each other to make the conductor that consists of current path be in so-called parallel flat state.

In the dull and stereotyped state of this parallel flat, come and go that magnetic flux that conductor produces is cancelled out each other and the surface variations of magnetic flux on disappeared.

Disclosed the electricity method of attachment that utilizes this principle in Japanese Patent Publication No.7-131981 (1995), No.9-47036 (1997), No.6-327266 (1994), No.7-245951 (1995) and No.9-70184 (1997).

In these lists of references, the total line of flat panel is put into insulating barrier and is made it be in the dull and stereotyped state of parallel flat near being placed between them, thereby reduces inductance.

But for the setting tool of stationary semiconductor devices and total line such as bolt is installed, need to offer reach through hole on smooth total line and insulating barrier.

In order to ensure insulation distance in this reach through hole, the aperture requires larger.Because electric current concentrates on the narrower part of total line width, so can't obtain satisfied predetermined impedance desired value.

If the surrounding of reach through hole covers with insulating material, the hole of total line itself can be less, but in order to make conductor part insulation, the structure of conductor and the insulating material complexity that becomes.

And on the other hand, the spacing between conductor narrows down, and inductance reduces, can be saturated but reduce effect.When for example known conductor spacing is reduced to 1cm from 10cm, provide larger reduction effect, but inductance can not reduce when spacing is reduced to 1mm from 1cm.

Therefore, can reduce inductance and need not to make the conductor spacing to narrow to the limit (for example until the dull and stereotyped thickness of slab of insulation).

And in Japanese Patent Publication No.4-133669 (1992) and No.6-225545 (1994), describe the structure that the hole is not provided and utilizes plane conductor, and as mentioned above, there is no the problem of insulation in reach through hole.But conductor must be done bending process.

And in Japanese Patent Publication No.6-225545 (1994), mention providing dielectric ceramic between conductor, but material used is restricted.

And in Japanese Patent Publication No.5-292756 (1993), No.6-38507 (1994) and No.9-117126 (1997), disclosed a kind of method that reduces coupling part inductance between power circuit semiconductor device and filter capacity.

The above has either way utilized the parallel-plate conductive lead wire, and link is connected with another conductor by the hole of insulating barrier between conductor.

But provide the break-through pore structure above-mentioned, for the true insulation distance from conductor with reach through hole to the terminal that is connected with other conductor by reach through hole, the aperture requirement is larger.In this case, electric current concentrates on the narrower part of conductor width that comprises reach through hole, and is difficult to obtain satisfied predetermined impedance desired value.

If the surrounding of reach through hole covers with insulating material, the hole of total line itself can be less, but in order to make conductor part insulation, the structure of conductor and the insulating material complexity that becomes.

For the problems referred to above, target of the present invention is reduce the inductance that is electrically connected to and make the circuit construction of electric power of power supply changeover device simple.

And other target of the present invention is to reduce the inductance that connects the lead-in wire of filter capacitor and semiconductor device in power circuit.

Utilize these structures, can dwindle or omit the requisite buffer circuits that is considered to of power circuit.

In order to realize above-mentioned target, feature of the present invention is as follows.

The circuit construction of electric power of power supply changeover device comprises the semiconductor module of at least two described power circuit one phases of correspondence; The positive side conductor (P conductor) that the collector terminal (PC end) of one of them described semiconductor module is connected with the DC power supply anode; The minus side conductor (N conductor) that the emitter terminal (NE end) of another described semiconductor module is connected with described DC power supply negative terminal; And the AC conductor (U conductor) that the collector terminal (NC end) of the emitter terminal (PE end) of described one of them semiconductor module and described other semiconductor module is connected with the AC side.

Described positive side conductor, described minus side conductor and described AC conductor form the plane total line; And

Described plane total line supports by the distolateral hierarchy of corresponding each described semiconductor module, thereby keeps the insulation between them, wherein

When the described collector terminal (PC end) of semiconductor module, described emitter terminal (PE end), described collector terminal (PE end) and described emitter terminal (NE end) during according to this being aligned arranged sequentially, described positive side conductor (P conductor), described AC conductor (U conductor) and described minus side conductor (N conductor) from described semiconductor module BOB(beginning of block) according to this order or opposite arranged sequentially.

Therefore when conductor was connected with semiconductor module by bolt, other conductor need not to arrange reach through hole.

And the circuit construction of electric power of power supply changeover device comprises a plurality of semiconductor modules, and power circuit comprises: the positive side that consists of the direct current input side exchanges the interchange end of outlet side with minus side end and formation; And the filter capacity that is connected with described minus side end at described positive side by each described positive side conductor and described minus side conductor, wherein

Described positive side conductor and described minus side conductor form respectively tabular, and it comprises one group of coupling part on relative angular position,

Another line that line making one group of coupling part on the described positive side conductor of constraint and the described minus side conductor coupling portion of constraint are divided thereby described positive side conductor and described minus side conductor are arranged in parallel intersects,

Each coupling part of described positive side conductor and described minus side conductor is connected with filter capacity, and

Each other coupling part of described positive side conductor and described minus side conductor is connected with described minus side end with described positive side respectively.

Fig. 1 is the end view of first embodiment of the invention.

Fig. 2 is the circuit diagram that power supply changeover device one phase electricity embodiment illustrated in fig. 1 connects.

Positive side conductor in Fig. 3 A, 3B, 3C presentation graphs 1, AC conductor and minus side conductor.

Fig. 4 A, 4B are the end view of second embodiment of the invention.

Fig. 5 A, 5B are end view and the top view of third embodiment of the invention.

Fig. 6 A is the top view of fourth embodiment of the invention, and Fig. 6 B is end view, and Fig. 6 C is other end view of Fig. 6 A.

Fig. 7 is the circuit diagram that the electricity of a phase in three layers of corresponding power transducers connects.

Fig. 8 A is the top view of fifth embodiment of the invention, a phase of its corresponding three layers of power supply changeover device, and Fig. 8 B, 8C are end view.

Fig. 9 represents respectively minus side conductor, the second intermediate electric potential conductor, positive side conductor, the first intermediate electric potential conductor and intermediate electric potential side conductor.

Figure 10 A, 10B are front view and the end view of sixth embodiment of the invention.

The electric current that Figure 11 A, 11B show positive side conductor 72 shown in Figure 10 A, 10B and minus side conductor 73 distributes.

Figure 12 shows the structure of positive side conductor 25 and the minus side conductor 35 of seventh embodiment of the invention.

The electric current that Figure 13 A, 13B show positive side conductor 25 shown in Figure 12 and minus side conductor 35 distributes.

Below by accompanying drawing, the embodiment of the present invention is described.

In an embodiment, IGBT (insulated gate bipolar transistor) is used as semiconductor module.

But other module such as metal oxide semiconductor transistor, bipolar transistor also can be included in semiconductor module of the present invention.

Fig. 1 is first embodiment of the invention, and shows the end view structure of power supply changeover device one phase.

Label 1 is positive side IGBT module, and 2 is the minus side of IGBT module, and 3 is the positive side (hereinafter referred to as the P conductor) of conductor, 4 is AC conductor (hereinafter referred to as the U conductor), 5 is minus side conductor (hereinafter referred to as the N conductor), and 6-9 is bolt, and 10-13 is the end pad.

The collector terminal of IGBT module 1 is called PC and emitter terminal is called PE.Equally, the collector terminal of IGBT module 2 and emitter terminal are called NC and NE.

In an embodiment, when the collector terminal of separately IGBT module and emitter terminal are arranged in a straight line, thereby the positive side of a phase is connected the IGBT module and is connected with conductor as shown in Figure 2 with minus side.

Fig. 2 shows a phase of power supply changeover device, and it completes direct current to the conversion of interchange or AC-to DC.

According to annexation shown in Figure 2, positive side conductor 3 is connected with the end PC of IGBT module 1 with the anode (being equivalent to the filter capacity 71 in Fig. 2) of DC power supply,

AC conductor 4 is connected with the end PE of unillustrated ac output end, IGBT module 1 and the end NC of IGBT module 2, and

Minus side conductor 5 is connected with the end NE of IGBT module 2 with the negative terminal (filter capacity 71 in corresponding diagram 2) of DC power supply.

In Fig. 1, IGBT module 1 and 2 conductor are called bottom and the top upper strata that is called.

In Fig. 1, positive side conductor 3 is arranged in lower floor, and it is connected with the end PC of IGBT module 1 with pad 10 by bolt 6.

In this embodiment, bolt 6 is connected with conductor with pad 10 and will holds PC to be connected with positive side conductor 3, and the positive side conductor 3 of mechanical support.

Directly arrange AC conductor 4 on positive side conductor 3.

In this case, the interval between positive side conductor 3 and AC conductor 4 is greater than the height of bolt 6 heads.

Therefore need not perforate on AC conductor 4 so that bolt 6 passes through.

AC conductor 4 is connected with the end PE of IGBT module 1 with pad 11 by bolt 7 and is connected with the end NC of IGBT module 2 with pad 12 by bolt 8.

Minus side conductor 5 is arranged in the upper strata, and AC conductor 4 is greater than the height of bolt 7 and 8 heads, and is connected with the end NE of IGBT module 2 with pad 13 by bolt 9 with the same manner.

Therefore need not perforate on minus side conductor 5 so that bolt 7 and 8 heads pass through.

In the embodiment shown in fig. 1, except above, positive side conductor 3, AC conductor 4 and minus side conductor 5 begin to arrange in order from lower floor.

On the contrary, thus minus side conductor 5, AC conductor 4 and positive side conductor 3 can begin to arrange in order with the same manner from lower floor and reduce inductance.

But due at the top conductor 3 of having placed maximum potential, come interim easily short circuit so work as external foreign matter.

Therefore preferably minus side conductor 5 is placed on top on.

In Fig. 1, conductor 3,4,5 has respectively slab construction, and each output is arranged in IGBT module 1,2 upside.

In the situation that horizontal placement various structures shown in Figure 1 and multi-phase power supply inverter consist of thus, can be transversely arranged and need not tolerance and overall size can be very little.

Fig. 3 A, 3B, 3C show from the conductor 3,4 of IGBT module top view, 5 structure (as shown in Figure 1).Each conductor has slab construction, and has placed each hole 32,42,43,52 that conductor is connected with the end of IGBT module by bolt 6.

And on top, provide respectively the output 30,40,50 that is used for connecting unillustrated external circuit, and form the hole of connecting bolt.

Utilize this structure of the present embodiment, consist of dull and stereotyped conductor 3,4,5 parallel placements, compare with the situation that common conductive lead wire is not only long but also narrow, the inductance of power circuit is suppressed largely.

And owing to need not to provide the hole that bolt 6,7,8 heads are passed through in each conductor 4,5, so need not to make these hole insulation.

And owing to passing through cutting flat conductor and perforate, conductor 3,4,5 has respectively simple structure, so assembling conductor 3,4,5 is very easy to.

And notice the order of the output of drawing from conductor, from Fig. 3 apex angles, the output of the output of P conductor and U conductor is arranged in order from left beginning.

That is, due to the output of N and P conductor (reasonable is that the P end is opposite with the N end) adjacent to each other, so the effect that can bring for reduction inductance and stabling current balance.

In addition, in the first embodiment shown in Figure 1, determine to consist of interval between each flat board of each conductor by adjusting pad 10,12 height so that basic electric insulation to be provided, insulating material may reside in interval between flat board.

Fig. 4 shows second embodiment of the invention, and Fig. 4 A shows end view and Fig. 4 B shows the structure of AC conductor 4.

The direction that the second embodiment and the difference of the first embodiment are the output of drawing from conductor 4 is different with the output direction of drawing from positive side conductor 3 and minus side conductor 5, and laterally places.

According to this layout, conductor 3 and conductor 4 are arranged in same layer, and conductor 5 is placed on layer.

Therefore compare with the first embodiment, conductor 3 and 5 can closely be placed, and inductance can further reduce.

And device highly has advantages of lower.

As shown in Figure 4 B, the end of conductor 4 has to lead to the right (the perhaps left side of Fig. 4 B) of device.

Even other conductor 3 and 5 leads to top, also only have conductor 4 laterally to draw, when multi-phase power supply inverter as shown in Fig. 4 A consists of by arranging a plurality of structures, because can't being placed on the end, the IGBT module divides, so the device lateral size is larger.

If therefore embodiment has enough spaces at installing space, and need to reduce upper dimension and more inductance, this structure is effective.

Fig. 5 A is the end view of third embodiment of the invention and Fig. 5 B is top view.

In above-mentioned the first and second embodiment, IGBT module 1,2 edges are always to placement, and namely collector terminal and emitter terminal are arranged as straight line.

But in this embodiment, the collector electrode of IGBT module 1 along the right of accompanying drawing arrange and the emitter 1 of IGBT module along the left of accompanying drawing to arrangement, thereby IGBT module 2 is placed on collector electrode that the bottom makes IGBT module 2 and arranges and emitter is arranged along the right direction along left direction, and the position of same collector and emitter can be reversed left to right and turn upside down.

According to this arrangement of IGBT module, the output of drawing from each conductor can arrange in the same direction and conductor 3 and 4 can be placed on same layer, and conductor 5 can be placed as double-layer structure is provided, thereby makes device very thin.

Even structure, also can reduce inductance in this manner.

Compare with the embodiment of Fig. 1, lateral dimension is larger, but vertically less advantage is arranged.

Fig. 6 A, 6B, 6C show top view and two kinds of end views of fourth embodiment of the invention.

The IGBT module of three-phase U, V, W is placed in radiating block 101 as shown in Fig. 6 A, 6B, 6C, and shows the power circuit general construction of the transducer that comprises filter capacitor 71.

Each is with the module structure formation of three IGBT circuit comprising parallel connection shown in Figure 2.

For the connection of conductor is shown, in the U of top view phase part, show the connection of positive side conductor 3 by removing minus side conductor 5 and AC conductor 4, in the V of top view phase part, show the connection of AC conductor 4 by removing minus side conductor 5, in the W of top view phase part, show the connection of minus side conductor 5.

But in Fig. 6 C, filter capacity 71 is placed on minus side conductor 5 one sides, and the anode of electric capacity is connected with positive side conductor 3 with minus side conductor 5 by conductor 72,73 with negative terminal.

And insulation dull and stereotyped 104 is arranged between conductor 72 and 73.In these embodiments, the difference of first, second, and third embodiment is as follows:

(1) provide the slit (3S-5S) of desired depth in each plane conductor 3,4,5 ends, and form the base portion (3f-5f) with predetermined length by bent flat plate conductor 3,4,5.

In addition, the end that is provided in base portion is divided in the end of IGBT module end and connecting bolt.

(2) conductor 3,4,5 interval be by the base portion adjustment of bending, and conductor 3 is arranged in lowermost layer, and conductor 4 is positioned at the intermediate layer, and conductor 5 is positioned at top.

(3) in the middle of the output of conductor 3 was positioned at, the output of conductor 4 was positioned at the right, and the output of conductor 5 is positioned at the left side.

(4) provide insulation dull and stereotyped 14,15 between conductor 3 and 4 and 4 and 5.

According to above-mentioned (1), (2), to compare with embodiment illustrated in fig. 1, conductor needs bending, but need not to hold pad and can reduce parts number.

And provide respectively slit 3s, 4s, 5s between the IGBT of conductor 3-5 end, and in order to keep the balance of IGBT end electric current, they are useful.When IGBT module parallel connection as shown in Fig. 6 A, 6B, 6C and IGBT module comprised a plurality of end, the current balance type of end was very important.

The imbalance of each end inductance causes holding the imbalance of electric current.When as an example of conductor 3 example, crossover current flows in the loop of IGBT module 1 lead and conductor 3 formation.

For example the flow path of crossover current is the inner lead of 3f-＞3-3f-＞IGBT module 1.

By slit 35 is provided, can increase overall length than the loop of long electrical wave, loop inductance increases, so crossover current reduces and can balance element in parallel between electric current.

Complete AC conductor 4 and minus side conductor 5 according to the same manner.

According to the situation of (2) and (3), because conductor 3 is placed on lowermost layer, so that overall length becomes is the shortest.Be placed on top conductor 5 and become on the contrary the longest.

In the conductor 3 that is placed on lowermost layer, due to the close together between output and IGBT module end, thus easily provide difference for each current path, so be difficult to balanced balanced current.

Therefore the current balance type that flows into element in parallel can improve by place output in the centre.

The output of the output of conductor 3 and minus side conductor 5 is adjacent to each other, and the mutual inductance when IGBT module 1 or 2 is switched is minimum.

And it is evident that, the layout of intermediate layer conductor and top conductor output can be replaced on the right and between the left side, can reach above-mentioned effect equally.

Even when the minus side conductor is positioned at lowermost layer and positive side conductor is positioned at and replaces the conductor sequence when top, the advantage in the middle of the conductor output of lowermost layer is placed on also can reach.

According to above-mentioned (4), as shown in the first and second embodiment, need not to make distance between each conductor greater than being used for the height of bolt (6a-9c) of link, by being narrowed down, distance can reduce inductance.

The example that the present invention is used for three grades of converters is below described.

Three grades of converters are a kind of power supply changeover devices, it with direct current be converted to comprise three kinds of electromotive force alternating currents (according to the positive and negative and intermediate electric potential of the separation potential capacitance of unillustrated DC power supply parallel connection) or opposite, it is equivalent to the circuit of a phase shown in Figure 7.

Fig. 8 shows the structure of the power circuit of three grades of converters shown in Figure 7.

The power circuit that below utilizes Fig. 7 to describe three grades connects.

Positive side filter electric capacity 210 is connected with minus side filter capacity 211.

From the P point of filter capacity 210 positive sides, IGBT module 201,202,203,204 is connected in order.

In IGBT module 201,202,203 and 204, the same with Fig. 6, each module comprises three groups of collector terminals and emitter terminal.

And just side clamping diode 205 is being connected to the tie point of IGBT module 201 and 202 from the neutral point between filter capacity 210-211, and the point that minus side clamping diode 206 connects between IGBT modules 203 and 204.

Positive side conductor 3 is connected to the P point collector terminal PC1 of IGBT module 201, AC conductor 4 is connected to unillustrated load with the emitter terminal PE2 of IGBT module 202 and the collector terminal NC3 of IGBT module 203, and minus side conductor 5 is connected to the N point with the emitter terminal NE4 of IGBT module 204.

Conductor 207 is connected the emitter terminal PE1 of IGBT module 201 and the collector terminal PC2 of IGBT module 202 with the cathode terminal PDK of positive side clamping diode 205, conductor 208 is connected the emitter terminal NE3 of IGBT module 203 and the collector terminal NC4 of IGBT module 204 with the anode tap NDA of minus side clamping diode 206, and conductor 209 is connected the C point with the anode tap PDA of clamping diode 205 and the cathode terminal NDK of clamping diode 206.

In Fig. 8, be positioned at top AC conductor 4 easy to understand, but the structure indigestion of bottom layer conductors.

Therefore Fig. 9 A, 9B show the conductor 3,207 of the bottom, 208 and 5 preliminary shape and layout, and Fig. 9 C shows the preliminary shape of intermediate layer inner wire 209.

In each conductor, provide slit between IGBT module 201-204 and the IGBT that is connected end, thereby improved the balance of IGBT end electric current according to mode shown in Figure 6.

And in conductor 4, the IGBT end that connects IGBT module 202 with larger slit 49e is provided between the IGBT that is connected IGBT module 203 holds.

So the current path length of flow through conductor 202 and 203 is elongated slightly and the inductance increase is a little, but end current balance type of IGBT module 202 and 203.

Have hole 2070,2080 in conductor 207,208.

Thereby this makes conductor 207,208 not contact with diode end 2091,2092 conductor 209 is connected with clamping diode 205,206.

Can replace above-mentioned hole with slit.End from IGBT module 201 and 204 looks over as shown in Figure 6, be positioned at the output 30 of the shorter conductor of the bottom and current path 3 and the output 50 of conductor 5 and be positioned at the centre, and the electric current of flowing through in the IGBT element is balanced.

In order to reduce the mutual inductance of three grades of inverter power supply circuit, with the output 2090 of the output of the output 2090 of the output 30 of positive side conductor 3 and neutral conductor 209 or minus side conductor and neutral point conductor 209 mutually near being favourable.

Therefore output 30 and 50 is placed in the middle of each conductor, the output 2090 of neutral point conductor 209 is between output 30 and 50.

Therefore realize as mentioned above the balance of each circuit, and realized reducing of inductance.

In other AC conductor 4, thereby being divided into two ends 40a and 40b, output is arranged in conductor 3,5 the right and the left side.So the circuit of the conductor of flowing through has obtained good balance.

As mentioned above, in the power circuit of three grades of converters structure, by relatively simple constitution realization low inductance and the current balance type of power circuit structure.

If the output of AC conductor 4 is between conductor 3 and 5, and the end of conductor 209 is divided into two parts, thereby two parts are positioned at right-hand member and left end, can reach same effect.

In Fig. 6 A, 6B6C and 8A, 8B, 8C, the IGBT module that comprises three groups of collector and emitter ends is identical with example, but IGBT number in parallel is not limited to these examples.

When the IGBT module that only has respectively an end was in parallel, structure was similar.

In the above-described embodiments, because the structure of conductor is tabular, so can be used for means of transportation such as electric motor car.

In this case, the vibrations of vehicle body may produce unwanted sound, and parts may collide and damage.

If conductor is thicker, can not shake, but weight increases.

In this case, each conductor forms groove, and conductor supports by dielectric support, and conductor edge is crooked, thereby prevents vibrations in the situation that conductor is not thick, and can prevent the damage of unwanted sound and parts.

The embodiment of the power circuit of the semiconductor module that connects with mode shown in Figure 2 and filter capacity is below described.

Figure 10 A shows semiconductor module power circuit one phase structure shown in Figure 1 and the filter capacity that is connected, and Figure 10 B is the end view of Figure 10 A of seeing from other direction.

In Figure 10 A, 10B, label 72 is the anode-side conductor, it is connected positive side conductor 3 with the anode of filter capacity 71, label 73 is the minus side conductor, it is connected the negative terminal of minus side conductor 5 with filter capacity 71, label 74 is the coupling part, it is connected positive side conductor 72 with the anode of filter capacity 71, label 75 is the coupling part, it is connected the negative terminal of minus side conductor 73 with filter capacity 71, and label 76 is the coupling part, and it is connected positive side conductor 72 with positive side conductor 3, label 77 is the coupling part, and it is connected minus side conductor 73 with minus side conductor 5.

Positive side conductor 73 is that rectangular conductor is dull and stereotyped, comprises the bossing of relative angle part, and the coupling part 75 of one of them bossing is connected with the negative terminal of filter capacity 71, and the coupling part 77 of other bossing is connected with minus side conductor 5.

And positive side conductor 72 is being a conductor plate, and the structure that comprises is, minus side conductor 73 upsets and be provided in the back side of minus side conductor 73.

Positive side conductor 72 connect coupling part 74 filter capacity 71 anode tap and according to the positive side conductor 3 that is connected with the same mode of minus side conductor 73 in coupling part 76.

And the center rectangle part of positive side conductor 72 and minus side conductor 73 is parallel to each other overlapping, and coupling part 75 and coupling part 77, and coupling part 74 crosses one another with coupling part 76.

That is, the electric current of the positive side conductor 72 of inflow and minus side conductor 73 is mutually orthogonal.

And the lateral width W of positive side conductor 72 and minus side conductor 73 overlapping parts is greater than the anode of filter capacity 71 and the distance L between negative terminal, and just the spacing of side conductor 72 and minus side conductor 73 is defined as not occuring to discharge.If place insulating material between conductor 72,73, conductor separation is narrowed down.

Figure 11 A, 11B show respectively the CURRENT DISTRIBUTION of positive side conductor 72 and minus side conductor 73.In these accompanying drawings 11A, 11B, each curve shows power line, and the interval of curve is narrower, and current density is stronger.

In Figure 11 A, 74 electric currents that flow out flow to coupling part 76 by positive side conductor 3 from the coupling part by the anode of filter capacity 71.

In Figure 11 B, 77 electric currents that flow out flow to coupling part 75 by the negative terminal of filter capacity 71 from the coupling part by minus side conductor 5.

Like this, just the power line of side conductor 72 and minus side conductor 73 is dispersed in each conductor.

This is that namely the coupling part of the coupling part of filter capacity 71 and conductor is near IGBT module 1,2 because the interior electric current that flows into of conductor is taken from the large part of other conductor current density.

Because power line is dispersed in conductor, so the lead-in inductance between filter capacity 71 and semiconductor circuit reduces.

And because the opposite current of positive side conductor 2 and minus side conductor 3 flows, so magnetic flux is cancelled each other and reduced lead-in inductance.

Figure 12 is the schematic diagram of other embodiment of the present invention, and show the structure of positive side conductor 25 and minus side conductor 35, they are connected filter capacity with the power circuit of semiconductor module, this module comprises the three phase units that filter capacity is connected with semiconductor module one shown in Figure 2.

Positive side conductor 25 comprises protruding coupling part 74u, 74v, 74w, and they are connected with the anode of the filter capacity 71u-71w that is provided in each facies unit and comprise protruding coupling part 76u, 76v and the 76w that is connected with the anode of each phase semi-conductor electricity source circuit.

Equally, minus side conductor 35 comprises protruding coupling part 75u, 75v, 75w, and they are connected with the negative terminal of the filter capacity 71u-71w that is provided in each facies unit and comprise protruding coupling part 77u, 77v and the 77w that is connected with the negative terminal of semi-conductor electricity source circuit.

Compare with the embodiment of Figure 10, in the embodiment of Figure 10, positive side conductor 72 and minus side conductor 73 lay respectively between each phase filter electric capacity and each phase semi-conductor electricity source circuit, on the contrary in the present embodiment, share one group of positive side conductor 25 and minus side conductor 35 between the semi-conductor electricity source circuit of the filter capacity of each phase and each phase.

Figure 13 A and 13B show the CURRENT DISTRIBUTION of positive side conductor 25 shown in Figure 12 and minus side conductor 35, and Figure 13 A shows the CURRENT DISTRIBUTION that the coupling part 76v of the positive side conductor of each semiconductor power circuit from coupling part 74u, the 74v of each phase filter electric capacity anode, 74w to the V phase flows, and Figure 13 B shows the CURRENT DISTRIBUTION that coupling part 77u, 77v from the minus side conductor of each semiconductor power circuit of U, V, W phase, 77w flow to the coupling part 77v of each filter capacity negative terminal.

According to this embodiment, thereby because shared one group of positive side conductor 24 is connected with each filter capacity with minus side conductor 34 each semiconductor power circuit with U phase, V phase, W phase, so can avoid parts to increase.

And electric current is the same with Figure 11 A, 11B scatters, and lead-in inductance has obtained inhibition.

And improved the current balance type of U phase, V phase and W power transducer mutually.

As mentioned above, according to the present invention, each conductor of power supply changeover device need not to provide the hole of bolt head, and need not to make hole inner wire SI semi-insulation.

Therefore insulation reliability convenient and device improves.

And in the situation that by the semiconductor module parallel connection is formed power supply changeover device, the electric current that flows into each semiconductor device is equal, the efficient of each semiconductor device takes full advantage of, so power supply changeover device has been realized microminiaturization effectively.

And in being connected of each semiconductor module and module and filter capacitor, inductance is reduced greatly, and the jump of semiconductor device voltage is inhibited, and the ability of element is not fully exerted.Therefore the buffer circuits that uses at present can omit or be microminiaturized.

Claims (2)

1. the main circuit structure of a power supply changeover device, described power supply changeover device comprises a plurality of semiconductor device that are one another in series and connect, to go out semiconductor module that the collector terminal of this semiconductor device and emitter terminal and injection molding be integrated as a phase from same direction side-draw, arrange a plurality of semiconductor modules as heterogeneous, has the positive side conductor (3) that the collector terminal (PC) with a semiconductor module (1) is connected with the anode of DC power supply, the collector terminal (NC) of the emitter terminal (PE) of a semiconductor module (1) and another semiconductor module (2) is connected in the AC conductor (4) of AC, the minus side conductor (5) that is connected with the negative electrode of DC power supply with emitter terminal (NE) with described another semiconductor module (2), described each conductor is formed respectively writing board shape and forms abreast hierarchy, it is characterized in that,

Respectively the output of positive side conductor, minus side conductor is formed on same direction in the output of described positive side conductor (3), minus side conductor (5), AC conductor (4),

At layer configuration described positive side conductor (3) and the AC conductor (4) near semiconductor module, at the layer configuration described minus side conductor (5) away from semiconductor module.

2. the main circuit structure of power supply changeover device according to claim 1, is characterized in that,

Form respectively the output of described positive side conductor (3), minus side conductor (5) and AC conductor (4) in same direction, each output is configured to the order of positive side conductor, minus side conductor, AC conductor.

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