CN111384036B

CN111384036B - Power module

Info

Publication number: CN111384036B
Application number: CN201811620061.2A
Authority: CN
Inventors: 程伟; 洪守玉; 廉东方; 王涛; 赵振清
Original assignee: Delta Electronics Shanghai Co Ltd
Current assignee: Delta Electronics Shanghai Co Ltd
Priority date: 2018-12-28
Filing date: 2018-12-28
Publication date: 2021-07-13
Anticipated expiration: 2038-12-28
Also published as: CN111384036A

Abstract

The invention provides a power module which comprises a first conductor, a second conductor, a third conductor, a plurality of first switch tubes and a plurality of second switch tubes. At least part of the first conductor is positioned on a first reference plane, at least part of the second conductor, at least part of the third conductor and the first reference plane are parallel to each other, and the projection of the first conductor and the second conductor on the first reference plane has a first overlapping area; the first end of each first switch tube is electrically coupled to the first conductor, the first end of each second switch tube is electrically coupled to the second end of at least one first switch tube through the third conductor, and the second end of each second switch tube is electrically coupled to the second conductor; the projection of the minimum envelope area of the first switch tubes and the minimum envelope area of the second switch tubes on the first reference plane has a second overlapping area, and the first overlapping area and the second overlapping area have an overlapping area. So that the heat sources of the power modules are uniformly distributed and the inductance is low.

Description

Power module

Technical Field

The invention relates to the technical field of packaging, in particular to a power module.

Background

Modern power electronic devices are widely used in the power, electronic, motor and energy industries as important components of power conversion. Ensuring long-term stable operation of power electronic devices and improving the power conversion efficiency of power electronic devices are always important goals for those skilled in the art.

The performance of a power semiconductor device, which is a core component of modern power electronic equipment, directly determines the reliability and power conversion efficiency of a power electronic device. In order to design a power electronic device with higher safety, reliability and performance, a power semiconductor device is required to have characteristics of low voltage stress, low power loss and high heat dissipation performance. Power semiconductor devices used in power electronic devices operate in a switching state, and the high frequency of switching causes a high rate of current change in the circuit. According to circuit principles, varying currents acting on parasitic inductances produce voltages. Under the condition that the current change rate is not changed, a higher voltage peak can be generated by a larger parasitic inductance, the reliability of the device can be reduced by an excessively high voltage peak, and the turn-off loss of the device is increased; and after the parasitic inductance of the circuit is reduced, the device is allowed to use smaller driving resistance to achieve faster switching speed and reduce switching loss so as to improve the efficiency of the converter. In addition, the power semiconductor device generates a large amount of heat during switching operation, and the operating performance thereof is seriously affected.

In summary, the requirements of reducing the parasitic inductance on the circuit where the power semiconductor device is located and improving the heat dissipation performance thereof are provided, and both the parasitic inductance and the heat dissipation performance are related to the packaging of the power semiconductor device, so that it is urgently needed to develop a power module with a reasonable packaging structure.

Disclosure of Invention

The invention aims to provide a power module, which solves the technical problems of large parasitic inductance and poor heat dissipation of the conventional power module.

According to an aspect of the present invention, there is provided a power module including:

a first conductor, at least a portion of which is disposed at a first reference plane;

a second conductor, at least a portion of which is disposed on a second reference plane, wherein the second reference plane is parallel to the first reference plane, and a projection of the first conductor on the first reference plane and a projection of the second conductor on the first reference plane have a first overlapping region;

a third conductor, at least a portion of which is disposed on a third reference plane, wherein the third reference plane is parallel to the first reference plane and the second reference plane;

a plurality of first switch tubes, each of the first switch tubes having a first end electrically coupled to the first conductor; and

a plurality of second switch tubes, a first end of each of the second switch tubes being electrically coupled to a second end of at least one of the first switch tubes through the third conductor, a second end of each of the second switch tubes being electrically coupled to the second conductor;

wherein the projection of the minimum envelope area of the plurality of first switch tubes on the first reference plane and the projection of the minimum envelope area of the plurality of second switch tubes on the first reference plane have a second overlapping area, and the first overlapping area and the second overlapping area have an overlapping area.

In an exemplary embodiment of the invention, the first and second switching tubes located at least one of the first and second sides of the first overlap region are arranged in a staggered manner, wherein the first and second sides of the first overlap region are disposed opposite to each other.

In an exemplary embodiment of the present invention, further comprising:

a first power terminal electrically coupled to the first conductor and leading out of a first side of the power module;

a second power terminal electrically coupled to the second conductor, the second power terminal being routed from the first side of the power module; and

a third power terminal electrically coupled to the third conductor, the third power terminal leading from a second side of the power module;

the first side and the second side of the power module are opposite, and the first power terminal and the second power terminal are arranged in a stacked mode.

In an exemplary embodiment of the present invention, further comprising:

a plurality of control signal conductors, each of the control signal conductors being electrically coupled to one of the control terminals of the first and second switching transistors, the plurality of control signal conductors being disposed around the first and second switching transistors; and

each control signal terminal is electrically coupled to one of the control signal conductors and led out from the second side of the power module, and the control signal terminals are symmetrically distributed on two sides of the third power terminal.

In an exemplary embodiment of the invention, in the first conductor and the second conductor corresponding to the first overlap region, a current flowing through the first conductor is in an opposite direction to a current flowing through the second conductor.

In an exemplary embodiment of the present invention, each of the first switching tubes is provided with only one of the first conductor, the second conductor, and the third conductor both above and below in a direction perpendicular to the first reference plane, and each of the second switching tubes is provided with only one of the first conductor, the second conductor, and the third conductor both above and below.

In an exemplary embodiment of the present invention, the plurality of first switching tubes are mounted on a first substrate, and the plurality of second switching tubes are mounted on the first substrate or a second substrate.

In an exemplary embodiment of the present invention, the first conductor is a conductive layer provided on the first substrate, and one of the second conductor and the third conductor is a conductive layer provided on the second substrate.

In an exemplary embodiment of the invention, the plurality of first switching tubes are disposed on the first conductor or the third conductor, and the plurality of second switching tubes are disposed on the second conductor or the third conductor.

In an exemplary embodiment of the invention, the first conductor has an L-shaped structure.

In an exemplary embodiment of the present invention, the projections of the plurality of first switching tubes on the first reference plane are not overlapped, the projections of the plurality of second switching tubes on the first reference plane are not overlapped, and the projections of the plurality of first switching tubes on the first reference plane and the projections of the plurality of second switching tubes on the first reference plane are not overlapped.

In an exemplary embodiment of the invention, the third conductor includes:

a first conductive layer disposed on the second reference plane and adjacent to the second conductor;

a second conductive layer disposed on the first reference plane and adjacent to the first conductor; and

a connection bridge, at least a portion of which is disposed on the third reference plane and electrically couples the first conductive layer and the second conductive layer together;

wherein, the plurality of first switch tubes are connected to one first conductor in common, and each second switch tube is separately connected to an independent second conductive layer.

In an exemplary embodiment of the present invention, the connection bridge includes:

the first bulges are arranged on the first side of the connecting bridge in a staggered mode and are connected with the first conductive layer through connecting materials; and

the second protrusions are arranged on the second side of the connecting bridge in a staggered mode and are connected with the second conductive layer through connecting materials, and the second side of the connecting bridge is opposite to the first side.

In an exemplary embodiment of the invention, the connecting bridge is a sheet metal part.

In an exemplary embodiment of the invention, the third conductor electrically couples the second end of each of the first switch tubes and the first end of each of the second switch tubes together.

In an exemplary embodiment of the present invention, the number of the plurality of first switching tubes and the number of the plurality of second switching tubes are equal or different.

In an exemplary embodiment of the invention, the second reference plane is located between the first reference plane and the third reference plane.

In an exemplary embodiment of the invention, the second conductor comprises sheet metal.

In an exemplary embodiment of the invention, the power module further includes a clamping capacitor, one end of the clamping capacitor is electrically coupled to the first conductor, and the other end of the clamping capacitor is electrically coupled to the second conductor.

In an exemplary embodiment of the invention, the third conductor includes N connection bridges, each of the connection bridges connects a part of the first switching tubes and a part of the second switching tubes in series to form a single-phase half-bridge structure, and the plurality of first switching tubes and the plurality of second switching tubes form an N-phase half-bridge structure, where N is an integer greater than or equal to 2.

According to the power module, the projection of the P pole conductor and the projection of the N pole conductor on the first reference plane are provided with the first overlapping area, so that the parasitic inductance of the power module can be effectively reduced; in addition, the upper bridge arm switch tubes and the lower bridge arm switch tubes are arranged on two sides of the first overlapping area at the same time, and the projections of the minimum enveloping areas of all the upper bridge arm switch tubes and the minimum enveloping areas of all the lower bridge arm switch tubes on the first reference plane have second overlapping areas, so that a heat source can be uniformly distributed, hot spots are effectively eliminated, heat exchange thermal resistance between the switch tubes with larger heat productivity and the environment is reduced, and the heat radiation performance of the power module is improved.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention. It is obvious that the drawings in the following description are only some embodiments of the invention, and that for a person skilled in the art, other drawings can be derived from them without inventive effort.

Fig. 1 is a circuit diagram of a half-bridge module according to a first embodiment of the disclosure;

fig. 2 is an isometric view of a half-bridge module structure according to a first embodiment of the present disclosure;

fig. 3 is a top view of a half-bridge module structure according to a first embodiment of the disclosure;

fig. 4 is a cross-sectional view a-a of the half-bridge module of fig. 3;

fig. 5 is a partial schematic structural diagram of a half-bridge module according to a first embodiment of the disclosure, showing a switching element disposed on a lower substrate;

fig. 6 is a partial schematic structural diagram of a half-bridge module according to a first embodiment of the disclosure, showing a switching element and a connection bridge disposed on a lower substrate;

fig. 7 is a partial structural diagram of a half-bridge module according to a first embodiment of the present disclosure, illustrating a connection structure between a switching element and an upper substrate;

fig. 8 is a circuit diagram of a half-bridge module according to a second embodiment of the disclosure;

fig. 9 is an isometric view of a half-bridge module configuration according to a second embodiment of the present disclosure;

fig. 10 is a partial schematic structural diagram of a half-bridge module according to a second embodiment of the disclosure, showing the switching elements disposed on the lower substrate;

fig. 11 is a partial schematic structural diagram of a half-bridge module according to a second embodiment of the disclosure, showing the switching elements and the connecting bridge disposed on the lower substrate;

fig. 12 is a partial structural diagram of a half-bridge module according to a second embodiment of the present disclosure, showing a connection structure between a switching element and an upper substrate;

fig. 13 is a circuit diagram of a half-bridge module according to a third embodiment of the present disclosure;

fig. 14 is an isometric view of a half-bridge module configuration according to a third embodiment of the present disclosure;

fig. 15 is a top view of a half-bridge module structure according to a third embodiment of the present disclosure;

fig. 16 is a cross-sectional view a-a of the half-bridge module of fig. 15;

fig. 17 is a partial schematic structural diagram of a half-bridge module according to a third embodiment of the present disclosure, showing a switching element disposed on a lower substrate;

fig. 18 is a partial schematic structural diagram of a half-bridge module according to a third embodiment of the present disclosure, showing the switching elements and the connecting bridges disposed on the lower substrate;

fig. 19 is a partial structural view of a half-bridge module according to a third embodiment of the present disclosure, showing a connection structure between a switching element and an upper substrate;

fig. 20 is a circuit diagram of a half-bridge module according to a fourth embodiment of the present disclosure;

fig. 21 is a partial schematic structural diagram of a half-bridge module according to a fourth embodiment of the present disclosure, showing the switching elements disposed on the lower substrate;

fig. 22 is a partial schematic structural view of a half-bridge module according to a fourth embodiment of the present disclosure, showing the switching elements and the connecting bridges disposed on the lower substrate;

fig. 23 is a partial schematic structural view of a half-bridge module according to a fourth embodiment of the present disclosure, showing a switching element and two connecting bridges disposed on a lower substrate;

fig. 24 is a circuit diagram of a three-phase half-bridge module according to a fifth embodiment of the disclosure;

fig. 25 is a partial schematic structural diagram of a three-phase half-bridge module according to a fifth embodiment of the disclosure, showing the switching elements disposed on the lower substrate;

fig. 26 is a partial schematic structural view of a three-phase half-bridge module according to a fifth embodiment of the present disclosure, showing the switching elements and the connecting bridges placed on the lower substrate;

fig. 27 is a partial structural schematic diagram of a three-phase half-bridge module according to a fifth embodiment of the present disclosure, showing a connection structure between a switching element and an upper substrate;

fig. 28 is a cross-sectional view of a half-bridge module according to a sixth embodiment of the present disclosure, in which the switching elements are planar power devices;

fig. 29 is an equivalent circuit diagram of a half-bridge module with a clamping capacitor according to a seventh embodiment of the disclosure;

fig. 30 is a schematic diagram of a half-bridge module with a clamping capacitor according to a seventh embodiment of the disclosure;

fig. 31 is a circuit diagram of a two-phase half-bridge module according to an eighth embodiment of the disclosure;

fig. 32 is an isometric view of a two-phase half-bridge module configuration of an eighth embodiment of the present disclosure;

fig. 33 is a schematic diagram of a partial structure of a two-phase half-bridge module according to an eighth embodiment of the disclosure, showing the switching elements disposed on the lower substrate;

fig. 34 is a partial schematic structural view of a two-phase half-bridge module according to an eighth embodiment of the present disclosure, showing the switching elements and the connecting bridges disposed on the lower substrate;

fig. 35 is a partial structural schematic diagram of a two-phase half-bridge module according to an eighth embodiment of the present disclosure, showing a connection structure between a switching element and an upper substrate.

Fig. 36 is a circuit diagram of a half-bridge module according to a ninth embodiment of the disclosure;

fig. 37 is a partial structural schematic diagram of a half-bridge module according to a ninth embodiment of the present disclosure.

Description of reference numerals:

1-P pole terminal; a 2-N pole terminal;

a 3-O pole terminal; 301-U phase O-pole terminal; a 302-V phase O-pole terminal; 303-W phase O-pole terminal; 4-control signal terminals;

a 10-P pole conductor; a 20-N pole conductor;

a 30-O pole conductor; 31-a first conductive layer; 32-a second conductive layer; 33-a connecting bridge; 331-a first projection; 332-a second projection;

3001-U phase O-pole conductor; 3002-a V-phase O-pole conductor; 3003-W phase O-pole conductor;

40-a control signal conductor;

100-P pole current; 1001-U phase P pole current; 1002-V phase P pole current; 1003-W phase P pole current;

200-N pole current; 2001-U phase N pole current; 2002-V phase N pole current; 2003-W phase N pole current; a 300-O pole current;

5-an upper substrate; 6-lower substrate; 56-L shaped gap structures;

711,712, 7111, 7112, 7113, 7114, 7121, 7122, 7123, 7124, 7131, 7132, 7133, 7134-upper bridge arm switch tube;

721,722, 7211, 7212, 7221, 7222, 7231, 7232-lower bridge arm switching tube;

8-a bonding wire; 9-plastic packaging the shell; 15-cushion block; 16-a connecting material;

17-overlapping spaces; 171-U phase overlap space; 172-V phase overlap space; 173-W overlapping spaces;

18-connecting column; cin-clamping capacitance.

Detailed Description

Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed description will be omitted.

In order to solve the technical problems of large parasitic inductance and poor heat dissipation of the conventional power module, an embodiment of the invention provides a power module, which comprises a first conductor, a second conductor, a third conductor, a plurality of first switching tubes and a plurality of second switching tubes. At least part of the first conductor is arranged on a first reference plane, at least part of the second conductor is arranged on a second reference plane, the second reference plane is parallel to the first reference plane, and a projection of the first conductor on the first reference plane and a projection of the second conductor on the first reference plane have a first overlapping area; at least part of the third conductor is arranged on a third reference plane, wherein the third reference plane is parallel to the first reference plane and the second reference plane; the first end of each first switch tube is electrically coupled to the first conductor, the first end of each second switch tube is electrically coupled to the second end of at least one first switch tube through the third conductor, and the second end of each second switch tube is electrically coupled to the second conductor; the projection of the minimum envelope area of the first switch tubes on the first reference plane and the projection of the minimum envelope area of the second switch tubes on the first reference plane have a second overlapping area, and the first overlapping area and the second overlapping area have an overlapping area.

The power module may be a half-bridge module, a two-phase half-bridge module, or a three-phase half-bridge module, etc. The first switching tube and the second switching tube may be power devices such as an IGBT, a MOSFET, or a diode. The minimum enveloping area of the plurality of first switching tubes is covered by the enveloping rectangle with the smallest area, the minimum enveloping area of the plurality of first switching tubes is covered by the enveloping rectangle with the smallest area in the rectangles enveloping the outermost edges of the plurality of first switching tubes, and the minimum enveloping area of the plurality of second switching tubes is covered by the enveloping rectangle with the smallest area in the rectangles enveloping the outermost edges of the plurality of second switching tubes. The first conductor is one of a P pole conductor and an N pole conductor, the second conductor is the other of the P pole conductor and the N pole conductor, and the third conductor is an O pole conductor; correspondingly, the first switch tube is one of the upper bridge arm switch tube and the lower bridge arm switch tube, and the second switch tube is the other one of the upper bridge arm switch tube and the lower bridge arm switch tube.

According to the power module provided by the embodiment of the invention, the parasitic inductance of the power module can be effectively reduced by arranging that the projections of the P pole conductor and the N pole conductor on the first reference plane have the first overlapping area; in addition, the upper bridge arm switch tubes and the lower bridge arm switch tubes are arranged on two sides of the first overlapping area at the same time, and the projections of the minimum enveloping areas of all the upper bridge arm switch tubes and the minimum enveloping areas of all the lower bridge arm switch tubes on the first reference plane have second overlapping areas, so that a heat source can be uniformly distributed, hot spots are effectively eliminated, heat exchange thermal resistance between the switch tubes with larger heat productivity and the environment is reduced, and the heat radiation performance of the power module is improved.

The power module according to the embodiment of the present invention will be described in detail below by taking the first conductor as a P-pole conductor, the second conductor as an N-pole conductor, the third conductor as an O-pole conductor, the first switching tube as an upper arm switching tube, and the second switching tube as a lower arm switching tube as examples.

Example one

Fig. 1 is a circuit diagram of a half-bridge module according to a first embodiment of the disclosure; fig. 2 is an isometric view of a half-bridge module structure according to a first embodiment of the present disclosure; fig. 3 is a top view of a half-bridge module structure according to a first embodiment of the disclosure; fig. 4 is a cross-sectional view a-a of the half-bridge module of fig. 3; fig. 5 is a partial schematic structural diagram of a half-bridge module according to a first embodiment of the disclosure, showing a switching element disposed on a lower substrate; fig. 6 is a partial schematic structural diagram of a half-bridge module according to a first embodiment of the disclosure, showing a switching element and a connection bridge disposed on a lower substrate; fig. 7 is a partial structural diagram of a half-bridge module according to a first embodiment of the present disclosure, illustrating a connection structure between a switching element and an upper substrate.

As shown in fig. 1-7, the half bridge module includes a P pole conductor 10, an N pole conductor 20, an O pole conductor 30, two upper leg switches 711 and 712, and two lower leg switches 721 and 722. The P-pole conductor 10 is disposed on a first reference plane, the N-pole conductor 20 is disposed on a second reference plane, and a portion of the O-pole conductor 30 is disposed on a third reference plane, wherein the first reference plane, the second reference plane, and the third reference plane are parallel to each other, e.g., all disposed horizontally, and a projection of the P-pole conductor 10 on the first reference plane and a projection of the N-pole conductor 20 on the first reference plane have a first overlapping region; the first terminals of the upper arm switches 711 and 712 are electrically coupled to the P-pole conductor, the first terminals of the lower arm switches 721 and 722 are electrically coupled to the second terminals of the upper arm switches 711 and 712 through the O-pole conductor 30, and the second terminals of the lower arm switches 721 and 722 are electrically coupled to the N-pole conductor 20; the projection of the minimum envelope area of the upper bridge arm switch tubes 711 and 712 on the first reference plane and the projection of the minimum envelope area of the lower bridge arm switch tubes 721 and 722 on the first reference plane have a second overlapping area, and the first overlapping area and the second overlapping area have an overlapping area.

Optionally, the half-bridge module further comprises a lower substrate 5 and an upper substrate 6 parallel to each other. The P-pole conductor 10 is a conductive layer disposed on the lower substrate 5, and the N-pole conductor 20 is a conductive layer disposed on the upper substrate 6. The O-pole conductor 30 includes a first conductive layer 31, a second conductive layer 32, and a connection bridge 33, and is disposed between the lower substrate 5 and the upper substrate 6; wherein the first conductive layer 31 is arranged on the upper substrate 6 and adjacent to the N-pole conductor 20; the second conductive layer 32 is arranged on the lower substrate 5 and adjacent to the P-pole conductor 10; the connection bridge 33 electrically couples the first conductive layer 31 and the second conductive layer 32 together through the connection material 16. All the switch tubes in the half-bridge module are arranged between the lower substrate 5 and the upper substrate 6, and are tiled on the lower substrate 5 without being stacked on each other. I.e. the projections of the four switching tubes of upper

leg switching tubes

711 and 712 and lower

leg switching tubes

721 and 722 onto the first reference plane do not overlap each other. Specifically, upper arm switches 711 and 712 are commonly mounted to P-pole conductor 10, lower arm switch 721 is separately mounted to one separate second conductive layer 32, and lower arm switch 722 is separately mounted to the other separate second conductive layer 32. At this time, in a direction perpendicular to the first reference plane, each switching tube is provided with only one power conductor both above and below, that is, only one of the P-pole conductor 10, the N-pole conductor 20, and the O-pole conductor 30 is provided vertically above each switching tube, and only one of the P-pole conductor 10, the N-pole conductor 20, and the O-pole conductor 30 is provided vertically below each switching tube. In addition, the upper side of each switch tube is also provided with a cushion block 15, and the cushion block 15 can be a conductive metal block; the plastic package housing 9 is used for packaging the half-bridge module.

Optionally, for example, the first power terminal is a P-pole terminal, the second power terminal is an N-pole terminal, and the third power terminal is an O-pole terminal; the half-bridge module further includes a P-pole terminal 1, an N-pole terminal 2, an O-pole terminal 3, a plurality of control signal terminals 4, and a plurality of control signal conductors 40. The P-pole power terminal 1 is electrically coupled to the P-pole conductor 10, and the N-pole power terminal 2 is electrically coupled to the N-pole conductor 20; the P pole power terminal 1 and the N pole power terminal 2 are both led out from the first side of the half-bridge module and are arranged in a stacked mode, and parasitic inductance of the half-bridge module can be further reduced. The O pole power terminal 3 is electrically coupled to the O pole conductor 30 and is drawn from a second side of the half bridge module opposite the first side. Each control signal conductor 40 is electrically coupled to one of the control terminals of the upper

arm switch tubes

711 and 712 and the lower

arm switch tubes

721 and 722 through a bonding wire 8, and a plurality of control signal conductors 40 are arranged around the upper

arm switch tubes

711 and 712 and the lower

arm switch tubes

721 and 722; each control signal terminal 4 is electrically coupled to one of the control signal conductors 40 and led out from the second side of the half-bridge module, and the control signal terminals 4 are symmetrically distributed on two sides of the O-terminal 3.

Optionally, the connecting bridge 33 comprises two first bumps 331 and two second bumps 332. Wherein, two first protrusions 331 are staggered on the top side of the connecting bridge 33 and connected with the first conductive layer 31 through the connecting material 16; the two second protrusions 332 are disposed alternately on the lower side of the connecting bridge 33 and connected to the second conductive layer 32 through the connecting material 16. The staggered arrangement here means that two protrusions are arranged diagonally, and the plurality of protrusion structures of the connecting bridge 33 are stably placed in the connecting process of the connecting material, and have a simple structure and high connection reliability. In addition, the connecting bridge 33 can be simplified into a sheet metal structure, and the processing cost can be reduced.

In the vertically corresponding overlap space 17 of the first overlap region, a current flowing through the P-pole conductor 10, i.e., a P-pole current 100, is opposite to a current flowing through the N-pole conductor 20, i.e., an N-pole current 200. The overlapping space 17 is a closed cuboid space surrounded by upper and lower bottom surfaces of a P-pole conductor and an N-pole conductor which vertically correspond to the first overlapping area. Specifically, a P pole current 100 flows vertically from the P pole terminal 1 with respect to the cross-sectional view of fig. 4, and an N pole current 200 flows vertically with respect to the cross-sectional view of fig. 4; the current directions of the power device and the power device are opposite, so that the effect of inductance offset is well realized, the parasitic inductance of the power module can be reduced, the electrical reliability of the operation of the power device is improved, and the turn-off loss of the power device is reduced so as to improve the efficiency of the power module. In addition, the upper and lower surfaces of the switching tube are adjacent to the substrate, and specifically, are connected to the substrate through the connection material, or are connected to the substrate through the spacer 15 and the connection material 16. The substrate can be a high-thermal-conductivity substrate, such as a double-sided copper-clad ceramic plate (ceramic material can be alumina ceramic, aluminum nitride ceramic, silicon carbide ceramic, beryllium oxide ceramic, and the like) or an insulating metal substrate, and the insulating medium material used by the substrates has higher thermal conductivity, so that the substrate has good heat transfer performance, and heat generated by the switch tube can exchange heat with the environment through the upper and lower channels, so that double-sided heat dissipation is realized.

Optionally, an upper bridge arm switching tube 711 and a lower bridge arm switching tube 722 are sequentially arranged from front to back on the left side of the overlapping space 17; on the right side of the overlapping space 17, a lower arm switch tube 721 and an upper arm switch tube 712 are sequentially arranged from front to back, that is, the upper arm switch tube and the lower arm switch tube are arranged in a staggered manner. Compared with the situation that only the upper bridge arm switching tube is arranged on one side of the overlapping space 17, only the lower bridge arm switching tube is arranged on the other side of the overlapping space; or only the upper bridge arm switching tubes are arranged in one row, and only the lower bridge arm switching tubes are arranged in the other row.

Firstly, when only the upper bridge arm switching tubes are arranged on one side of the overlapping space 17 and only the lower bridge arm switching tubes are arranged on the other side of the overlapping space, for example, the upper bridge

arm switching tubes

711 and 712 are arranged on the left side from front to back in sequence, and the lower bridge

arm switching tubes

721 and 722 are arranged on the right side from front to back in sequence; or only the upper arm switching tubes are arranged in one row, and only the lower arm switching tubes are arranged in the other row, for example, when the left side is sequentially provided with the lower arm switching tube 711 and the lower arm switching tube 721 from front to back, and the right side is sequentially provided with the lower arm switching tube 712 and the lower arm switching tube 722 from front to back. Although upper arm switching tube 711 is disposed adjacent to lower arm switching tube 721, upper arm switching tube 712 is disposed adjacent to lower arm switching tube 722; however, upper arm switching tube 711 and lower arm switching tube 722 are diagonally arranged, and upper arm switching tube 712 and lower arm switching tube 721 are diagonally arranged. The upper bridge arm switching tubes and the lower bridge arm switching tubes are arranged in a staggered mode, so that the upper bridge arm switching tubes 711 are adjacent to the two lower bridge

arm switching tubes

721 and 722, and the upper bridge arm switching tubes 712 are adjacent to the two lower bridge

arm switching tubes

721 and 722. Therefore, the parasitic inductance corresponding to the commutation loops of the upper arm switching tube 711 and the lower arm switching tube 722 is relatively small, and the parasitic inductance corresponding to the commutation loops of the upper arm switching tube 712 and the lower arm switching tube 721 is also relatively small, so that the parasitic inductance of the whole half-bridge module is further reduced.

In addition, in a partial working mode of the half-bridge module, total losses of the upper bridge arm switching tube and the lower bridge arm switching tube may be different, that is, heat generation amounts of the upper bridge arm switching tube and the lower bridge arm switching tube chip are different. At this time, only the layout structure of the upper arm switching tube or the lower arm switching tube is provided on one side, and it is obvious that the thermal density on one side is relatively high. The upper bridge arm switch tubes and the lower bridge arm switch tubes are arranged in a staggered mode, so that the effect of uniformly distributing heat sources can be achieved, hot spots are effectively eliminated, heat exchange thermal resistance between a chip with large heat productivity and the environment is reduced, and heat dissipation performance is improved. As shown in fig. 5, the upper

arm switching tubes

711 and 712 generate a large amount of heat, and the distance between the two chips generating a large amount of heat is assumed to be the distance between the upper arm switching tube 711 and the upper arm switching tube 712. In the conventional design, the distance between two chips having a large heat generation amount is mostly the distance between the upper arm switching tube 711 and the lower

arm switching tube

721 or 722 in fig. 5. Obviously, the distances between the switch tube chips with larger heat productivity can be effectively increased by the staggered arrangement of the upper bridge arm switch tubes and the lower bridge arm switch tubes, so that the heat distribution is more uniform, and the heat dissipation performance of the power module is improved.

Secondly, the upper bridge arm switching tubes and the lower bridge arm switching tubes are arranged in a staggered mode, the P pole conductors 10 and the second conducting layers 32 are arranged on the lower substrate 5 in a staggered mode, and the N pole conductors 20 and the first conducting layers 31 are arranged on the upper substrate 6 in a staggered mode. At this time, the P-pole conductor 10 and the N-pole conductor 20 each have an L-shaped structure, i.e., an L-shaped gap structure 56 is formed on both the lower substrate 5 and the upper substrate 6. The characteristic that a local linear gap structure has weak bending resistance is avoided, and the bending resistance of the upper substrate and the lower substrate can be improved; in addition, the L-shaped gap structure 56 is relatively arranged in the straight gap, so that a local stress concentration phenomenon generated at the gap position due to internal thermal stress or external structural stress bearing during the assembly and use of the power module can be effectively avoided, and the safety and yield of the module during the assembly process and the reliability during the use can be effectively improved.

Finally, the upper bridge arm switch tubes and the lower bridge arm switch tubes are arranged in a staggered mode, and the structure of the connecting bridge 33 is more stable. When only the upper bridge arm switching tube is arranged on one side of the overlapping space 17 and only the lower bridge arm switching tube is arranged on the other side, the structure of the connecting bridge 33 is unstable; that is, only the right side and the lower substrate 5 have the supporting points and the left side is in a suspended state during the assembly with the lower substrate 5, which is disadvantageous for the assembly. Therefore, a supporting point connected to the lower substrate 5 is also required to be disposed on the left side of the connecting bridge 33, and the two second protrusions 332 on the opposite corners of the bottom side of the connecting bridge 33 in the present embodiment are disposed on both sides of the overlapping space 17 to serve as supporting points for stably supporting the lower substrate 5; meanwhile, the two first protrusions 331 on the opposite corners of the top side are also disposed on both sides of the overlapping space 17 as support points to stably support the upper substrate 6.

It should be noted that the staggered arrangement in this embodiment means that one upper bridge arm switch tube and one lower bridge arm switch tube are respectively placed on the left and right sides of the overlapping space 17, and the arrangement order of the upper bridge arm switch tube and the lower bridge arm switch tube on the left and right sides is opposite. In other embodiments, the number and arrangement of the upper bridge arm switching tubes and the lower bridge arm switching tubes may be different.

Example two

Fig. 8 is a circuit diagram of a half-bridge module according to a second embodiment of the disclosure; fig. 9 is an isometric view of a half-bridge module configuration according to a second embodiment of the present disclosure; fig. 10 is a partial schematic structural diagram of a half-bridge module according to a second embodiment of the disclosure, showing the switching elements disposed on the lower substrate; fig. 11 is a partial schematic structural diagram of a half-bridge module according to a second embodiment of the disclosure, showing the switching elements and the connecting bridge disposed on the lower substrate; fig. 12 is a partial structural diagram of a half-bridge module according to a second embodiment of the disclosure, showing a connection structure between a switching element and an upper substrate.

As shown in fig. 8 to 12, the half-bridge module of the present embodiment is similar to the half-bridge module of the first embodiment, and the main difference is that the half-bridge module includes three upper bridge arm switching tubes. Specifically, the half bridge module includes a P pole conductor 10, an N pole conductor 20, an O pole conductor 30, three upper leg switching tubes 711,712, and 713, and two lower

leg switching tubes

721 and 722. Wherein, the projection of the P pole conductor 10 on the first reference plane and the projection of the N pole conductor 20 on the first reference plane have a first overlapping area; the P-pole conductor 10 is electrically coupled to the first ends of the upper arm switch tubes 711,712 and 713, the N-pole conductor 20 is electrically coupled to the second ends of the lower

arm switch tubes

721 and 722, and the first ends of the lower

arm switch tubes

721 and 722 are electrically coupled to the second ends of the upper arm switch tubes 711,712 and 713 through the O-pole conductor 30; the projection of the minimum envelope area of the upper bridge arm switch tubes 711,712 and 713 on the first reference plane and the projection of the minimum envelope area of the lower bridge

arm switch tubes

721 and 722 on the first reference plane have a second overlapping area, and the first overlapping area and the second overlapping area have an overlapping area.

Alternatively, the P-pole conductor 10, the N-pole conductor 20, and the O-pole conductor 30 are electrically connected to the P-pole terminal 1, the N-pole terminal 2, and the O-pole terminal 3, respectively; the control signal conductor 40 is electrically connected with the control signal terminal 4 and the control end of the switch tube through a bonding wire 8. The half-bridge module includes a lower substrate 5 and an upper substrate 6 parallel to each other, a P-pole conductor 10 being a conductive layer disposed on the lower substrate 5, and an N-pole conductor 20 being a conductive layer disposed on the upper substrate 6; three upper arm switch tubes 711,712, and 713 are commonly provided on the P-pole conductor 10, and two lower arm switch tubes are individually provided on the O-pole conductive layer disposed on the lower substrate 5, respectively. The P-level current 100 flows in from a P-level terminal 1, and the N-level current 200 flows out from an N-level terminal 2, wherein the directions of the two are opposite; the effect of inductance offset is well realized, parasitic inductance of the power module can be reduced, reliability of the power device is improved, and turn-off loss of the power device is reduced so as to improve efficiency of the converter. In addition, the upper surface and the lower surface of the switch tube are provided with heat dissipation channels for exchanging heat with the environment, so that double-sided heat dissipation can be well realized.

Optionally, the connecting bridge 33 comprises four first bumps 331 and two second bumps 332. Wherein, four first bumps 331 are disposed on the top side of the connecting bridge 33 and connected with the N-pole conductive layer through the connecting material 16; two second bumps 332 are disposed on the bottom side of the connecting bridge 33 and connected to the O-pole conductive layer through the connecting material 16. The plurality of protruding structures of the connecting bridge 33 are stably placed in the connecting process of the connecting material, and have a simple structure and high connection reliability. In addition, the connecting bridge 33 can be simplified into a sheet metal structure, and the processing cost can be reduced.

Optionally, an upper bridge arm switching tube 711 and a lower bridge arm switching tube 721 are sequentially arranged from front to back on the left side of the overlapping space 17 vertically corresponding to the first overlapping area; on the right side of the overlapping space 17, an upper arm switching tube 712, a lower arm switching tube 722, and an upper arm switching tube 713 are arranged in this order from front to back. Namely, the upper bridge arm switching tubes and the lower bridge arm switching tubes are arranged in a staggered manner on the right side of the overlapping space 17. Because the total loss of the upper bridge arm switching tubes and the total loss of the lower bridge arm switching tubes of the half-bridge module in a partial working mode may be different, for example, in fig. 8, the loss of three upper bridge arm switching tubes is large, and the loss of two lower bridge arm switching tubes is small, the working current of the lower bridge arm switching tubes can be increased appropriately, so that the number of the lower bridge arm switching tubes is reduced by one compared with the number of the upper bridge arm switching tubes. Compared with the situation that the number of the upper bridge arm switching tubes and the number of the lower bridge arm switching tubes in the half-bridge module are the same, the half-bridge module of the embodiment reduces one power device, so that the cost and the occupied size space are saved.

It should be appreciated that in other embodiments, the number of upper arm switching tubes may be greater than, equal to, or less than the number of lower arm switching tubes.

EXAMPLE III

Fig. 13 is a circuit diagram of a half-bridge module according to a third embodiment of the present disclosure; fig. 14 is an isometric view of a half-bridge module configuration according to a third embodiment of the present disclosure; fig. 15 is a top view of a half-bridge module structure according to a third embodiment of the present disclosure; fig. 16 is a cross-sectional view a-a of the half-bridge module of fig. 15; fig. 17 is a partial schematic structural diagram of a half-bridge module according to a third embodiment of the present disclosure, showing a switching element disposed on a lower substrate; fig. 18 is a partial schematic structural diagram of a half-bridge module according to a third embodiment of the present disclosure, showing the switching elements and the connecting bridges disposed on the lower substrate; fig. 19 is a partial structural diagram of a half-bridge module according to a third embodiment of the present disclosure, showing a connection structure between a switching element and an upper substrate.

As shown in fig. 13 to 19, the half-bridge module of the present embodiment is similar to the half-bridge module of the first embodiment, and the main difference is that the half-bridge module includes three upper bridge arm switching tubes and three lower bridge arm switching tubes, and the upper bridge arm switching tubes and the lower bridge arm switching tubes are respectively disposed on different substrates. Specifically, the half bridge module includes a P pole conductor 10, an N pole conductor 20, an O pole conductor 30, three upper leg switches 711,712, and 713, and three lower leg switches 721,722, and 723. Wherein, the projection of the P pole conductor 10 on the first reference plane and the projection of the N pole conductor 20 on the first reference plane have a first overlapping area; the P-pole conductor 10 is electrically coupled to the first ends of the upper arm switch tubes 711,712 and 713, the N-pole conductor 20 is electrically coupled to the second ends of the lower arm switch tubes 721,722 and 723, and the first ends of the lower arm switch tubes 721,722 and 723 are electrically coupled to the second ends of the upper arm switch tubes 711,712 and 713 through the O-pole conductor 30; the projection of the minimum envelope area of the upper bridge arm switch tubes 711,712 and 713 on the first reference plane and the projection of the minimum envelope area of the lower bridge

arm switch tubes

Alternatively, the half-bridge module includes a lower substrate 5 and an upper substrate 6 parallel to each other, the P-pole conductor 10 is a conductive layer disposed on the lower substrate 5, and the O-pole conductor 30 is a conductive layer disposed on the upper substrate 6; the N-pole conductor 20 includes a conductive layer arranged on the lower substrate 5 and a connection bridge structure, which may be a sheet metal member. The three upper bridge arm switch tubes are arranged on a P pole conductor 10 on the lower substrate 5 through a connecting material 16, the three lower bridge arm switch tubes are arranged on an O pole conductor 30 on the upper substrate 6 through the connecting material 16, and a connecting bridge structure in an N pole conductor 20 is positioned between the upper substrate and the lower substrate. The P-level current 100 and the N-level current 200 are opposite in direction, so that the effect of inductance offset is well realized, the parasitic inductance of the module can be reduced, the reliability of the device is improved, and the turn-off loss of the device is reduced to improve the efficiency of the converter.

Optionally, the N-pole connecting bridge includes three protrusion structures, and the three protrusions are staggered on the bottom side of the connecting bridge and connected with the N-pole conductive layer through the connecting material 16, where the staggered arrangement means that the three protrusions are not in the same straight line. A plurality of protruding structures of connecting bridge place stably in the connection technology of connecting material, simple structure, and connect the reliability height. In addition, the connecting bridge 33 can be simplified into a sheet metal structure, and the processing cost can be reduced.

Optionally, the upper bridge arm switch tube 711, the lower bridge arm switch tube 722 and the upper bridge arm switch tube 713 are sequentially arranged from front to back on the left side of the overlapping space 17 vertically corresponding to the first overlapping area; on the right side of the overlapping space 17, a lower arm switching tube 721, an upper arm switching tube 712, and a lower arm switching tube 723 are arranged in this order from front to back. Namely, the upper bridge arm switching tubes and the lower bridge arm switching tubes are arranged in a staggered manner on the left side and the right side of the overlapping space 17. Because the thermal paths from the switch tube to the upper substrate and the lower substrate are different, taking the bridge arm switch tube 711 as an example, the back surface of the bridge arm switch tube is provided with a power electrode, the size of the power electrode is the same as that of a switch chip, and the power electrode is connected with a conductive layer on the lower substrate 5 through a connecting material 16; the front power electrode is connected with the conductive layer on the upper substrate 6 through the pad 15 and the connecting material 16. Since the front surface of the chip has a control electrode in addition to the power electrode, the size of the pad 15 is smaller than the chip size. Therefore, the thermal conduction resistance from the chip to the upper substrate 6 is greater than the thermal conduction resistance from the chip to the lower substrate 5. In this embodiment, only one side of the switch chip, on which the power electrode is disposed, is disposed on the upper substrate and the lower substrate respectively through the connection material, so that the heat dissipation of the module to the upper substrate and the lower substrate can be balanced. Specifically, upper arm switching tubes 711,712, and 713 are placed on lower substrate 5 via connecting material 16, and lower arm switching tubes 721,722, and 723 are placed on upper substrate 6 via connecting material 16.

It should be noted that in other embodiments, a part of the upper and lower bridge arm switch tubes may be disposed on the lower substrate, and another part may be disposed on the upper substrate, or all the switch tubes may be disposed on the lower substrate or the upper substrate. For example, an O-pole conductor in which the upper arm switching tube is provided on the upper substrate, and an N-pole conductor in which the lower arm switching tube is provided on the lower substrate.

Example four

Fig. 20 is a circuit diagram of a half-bridge module according to a fourth embodiment of the present disclosure; fig. 21 is a partial schematic structural diagram of a half-bridge module according to a fourth embodiment of the present disclosure, showing the switching elements disposed on the lower substrate; fig. 22 is a partial schematic structural view of a half-bridge module according to a fourth embodiment of the present disclosure, showing the switching elements and the connecting bridges disposed on the lower substrate; fig. 23 is a partial schematic structural diagram of a half-bridge module according to a fourth embodiment of the present disclosure, showing a switching element and two connecting bridges disposed on a lower substrate.

As shown in fig. 20 to 23, the half-bridge module of the present embodiment is similar to the half-bridge module of the first embodiment, and the main difference is that the half-bridge module includes four upper bridge arm switching tubes and does not have an upper substrate. Specifically, the half bridge module includes a P pole conductor 10, an N pole conductor 20, an O pole conductor 30, four upper leg switching tubes 711,712, 713, and 714, and two lower

leg switching tubes

721 and 722. Wherein, the projection of the P pole conductor 10 on the first reference plane and the projection of the N pole conductor 20 on the first reference plane have a first overlapping area; the P-pole conductor 10 is electrically coupled to the first ends of the upper arm switch tubes 711,712, 713 and 714, the N-pole conductor 20 is electrically coupled to the second ends of the lower

arm switch tubes

721 and 722, and the first ends of the lower

arm switch tubes

721 and 722 are electrically coupled to the second ends of the upper arm switch tubes 711,712, 713 and 714 through the O-pole conductor 30; the projection of the minimum envelope area of the upper bridge arm switch tubes 711,712, 713 and 714 on the first reference plane and the projection of the minimum envelope area of the lower bridge

arm switch tubes

Alternatively, the half-bridge module of the present embodiment includes a lower substrate 5, the P-pole conductor 10 is a conductive layer disposed on the lower substrate 5, the O-pole conductor 30 includes a connection bridge structure and a conductive layer disposed on the lower substrate 5, and the N-pole conductor 20 is a connection bridge structure. The four upper arm switch tubes 711,712, 713, and 714 are collectively provided to the P-pole conductor 10 by the connecting material 16, and the two lower

arm switch tubes

721 and 722 are individually provided to the conductive layer arranged on the lower substrate 5 in the O-pole conductor 30, respectively. P-level current 100 flows in from P-level terminal 1, N-level current 200 flows out from N-level terminal 2, and the directions of the two are opposite, so that the effect of inductance offset is well realized, the parasitic inductance of the module can be reduced, the reliability of the device is improved, and the turn-off loss of the device is reduced to improve the efficiency of the converter. Further, an O pole current 300 flows from the O pole terminal 3. And the lower surface of each switch tube is provided with a heat dissipation channel for exchanging heat with the environment, so that single-side heat dissipation can be well realized. The single-sided heat dissipation structure has the advantage of low cost compared with double-sided heat dissipation, and can be used in occasions with strict requirements on cost.

Optionally, an upper bridge arm switching tube 711, a lower bridge arm switching tube 721 and an upper bridge arm switching tube 714 are sequentially arranged from front to back on the left side of the overlapping space 17 vertically corresponding to the first overlapping area; on the right side of the overlapping space 17, an upper arm switching tube 712, a lower arm switching tube 722, and an upper arm switching tube 713 are arranged in this order from front to back. Namely, the upper bridge arm switching tubes and the lower bridge arm switching tubes are arranged in a staggered manner on the left side and the right side of the overlapping space 17. Therefore, the P-level conductive layers and the O-level conductive layers in the lower substrate 5 are arranged in a staggered manner, and an L-shaped gap structure is formed between the P-level conductive layers and the O-level conductive layers, so that the bending resistance of the lower substrate can be improved. Meanwhile, no extra conductive island is arranged in the P-level conductive layer and the O-level conductive layer for connection between structures, so that the internal space of the module is saved, and the electrical property of the related conductive layers is improved.

Optionally, the two bottom side bumps of the O-pole connecting bridge are connected to the O-level conductive layer of the lower substrate 5 by the connecting material 16. The convex structure is stable to place in the connecting process of the connecting material 16, simple in structure, beneficial to the connecting process and high in connecting reliability. The two bottom-side protrusions of the N-pole connecting bridge are connected to the top electrodes of the lower

arm switching tubes

721 and 722 through the connecting material 16, and output an N-pole current 200 through the N-pole terminal 2. The O-pole connecting bridge and the N-pole connecting bridge can be simplified into a sheet metal structure, and the processing cost is low.

It should be appreciated that in other embodiments, the power module may include at least one of the upper and lower substrates, or may not include any substrate.

EXAMPLE five

Fig. 24 is a circuit diagram of a three-phase half-bridge module according to a fifth embodiment of the disclosure; fig. 25 is a partial schematic structural diagram of a three-phase half-bridge module according to a fifth embodiment of the disclosure, showing the switching elements disposed on the lower substrate; fig. 26 is a partial schematic structural view of a three-phase half-bridge module according to a fifth embodiment of the present disclosure, showing the switching elements and the connecting bridges placed on the lower substrate; fig. 27 is a partial structural schematic diagram of a three-phase half-bridge module according to a fifth embodiment of the present disclosure, which illustrates a connection structure between a switching element and an upper substrate.

As shown in fig. 24 to 27, the power module of the present embodiment is similar to the half-bridge module of the second embodiment, and the main difference is that the power module is a three-phase half-bridge module, and each phase half-bridge module includes four upper-arm switching tubes and two lower-arm switching tubes. Specifically, the three-phase half-bridge module includes a P-pole conductor 10, an N-pole conductor 20, a U-phase O-pole conductor 3001, a V-phase O-pole conductor 3002, and a W-phase O-pole conductor 3003; the U-phase half bridge includes four upper

arm switching tubes

7111, 7112, 7113, and 7114 and two

lower arm switches

7211 and 7212, the V-phase half bridge includes four upper

arm switching tubes

7121, 7122, 7123, and 7124 and two

lower arm switches

7221 and 7222, and the W-phase half bridge includes four upper

arm switching tubes

7131, 7132, 7133, and 7134 and two

lower arm switches

7231 and 7232. Wherein, the P-pole conductor 10 is electrically coupled to the first ends of the upper bridge

arm switch tubes

7111, 7112, 7113, 7114, 7121, 7122, 7123, 7124, 7131, 7132, 7133, and 7134; the N-pole conductor 20 is electrically coupled to the second ends of the lower

arm switching tubes

7211, 7212, 7221, 7222, 7231, 7232; first ends of lower

arm switching tubes

7211 and 7212 of the U-phase half bridge are electrically coupled to second ends of upper

arm switching tubes

7111, 7112, 7113 and 7114 through a U-phase O-pole conductor 3001, first ends of lower

arm switching tubes

7221 and 7222 of the V-phase half bridge are electrically coupled to second ends of upper

arm switching tubes

7121, 7122, 7123 and 7124 through a V-phase O-pole conductor 3002, and first ends of lower

arm switching tubes

7231 and 7232 of the W-phase half bridge are electrically coupled to second ends of upper

arm switching tubes

7131, 7132, 7133 and 7134 through a W-phase O-pole conductor 3003. In each phase of half bridge, a projection of the P pole conductor 10 on a first reference plane and a projection of the N pole conductor 20 on the first reference plane have a first overlapping area, a projection of a minimum envelope area of the upper bridge arm switch tube on the first reference plane and a projection of a minimum envelope area of the lower bridge arm switch tube on the first reference plane have a second overlapping area, and the first overlapping area and the second overlapping area have an overlapping area.

Alternatively, the P-pole conductor 10, the N-pole conductor 20, the U-phase O-pole conductor 3001, the V-phase O-pole conductor 3002, and the W-phase O-pole conductor 3003 are electrically connected to the P-pole terminal 1, the N-pole terminal 2, the U-phase O-pole terminal 301, the V-phase O-pole terminal 302, and the W-phase O-pole terminal 303, respectively. The three-phase half-bridge module includes a lower substrate 5 and an upper substrate 6 which are parallel to each other, a P-pole conductor 10 is a conductive layer disposed on the lower substrate 5, an N-pole conductor 20 is a conductive layer disposed on the upper substrate 6, and each of a U-phase O-pole conductor 3001, a V-phase O-pole conductor 3002, and a W-phase O-pole conductor 3003 includes a connecting bridge structure and a conductive layer disposed on the lower substrate 5. All the upper bridge arm switching tubes are arranged on the P pole conductor 10 together, and the lower bridge arm switching tubes are respectively and independently arranged on the conducting layers in the corresponding O pole conductors. In the U-phase half bridge, the U-phase P-stage current 1001 and the U-phase N-stage current 2001 are opposite in direction; in the V-phase half bridge, the V-phase P-stage current 1002 is in the opposite direction to the V-phase N-stage current 2002, and in the W-phase half bridge, the W-phase P-stage current 1002 is in the opposite direction to the W-phase N-stage current 2002. The effect of inductance offset is well realized, parasitic inductance of the module can be reduced, reliability of the device is improved, and turn-off loss of the device is reduced so as to improve efficiency of the converter. In addition, the upper surface and the lower surface of the switch tube are provided with heat dissipation channels for exchanging heat with the environment, so that double-sided heat dissipation can be well realized.

Alternatively, the first overlap region in U-phase corresponds to U-phase overlap space 171, the first overlap region in V-phase corresponds to V-phase overlap space 172, and the first overlap region in W-phase corresponds to W-phase overlap space 173. And the U-phase half bridge, the V-phase half bridge and the W-phase half bridge are transversely and linearly arranged. In the U-phase half bridge, an upper arm switching tube 7111, a lower arm switching tube 7211 and an upper arm switching tube 7114 are sequentially arranged from front to back on the left side of a U-phase overlapping space 171; an upper arm switching tube 7112, a lower arm switching tube 7212 and an upper arm switching tube 7113 are sequentially arranged from front to back on the right side of the U-phase overlapping space 171. In the V-phase half bridge, an upper arm switching tube 7121, a lower arm switching tube 7221 and an upper arm switching tube 7124 are sequentially arranged from front to back on the left side of the V-phase overlapping space 172; on the right side of the V-phase overlapping space 172, an upper arm switching tube 7122, a lower arm switching tube 7222, and an upper arm switching tube 7123 are arranged in this order from front to back. In the W-phase half bridge, an upper arm switching tube 7131, a lower arm switching tube 7231 and an upper arm switching tube 7134 are sequentially arranged from front to back on the left side of the W-phase overlapping space 173; on the right side of the W-phase overlapping space 173, an upper arm switching tube 7132, a lower arm switching tube 7232, and an upper arm switching tube 7133 are arranged in this order from front to back. In each phase of half bridge, the upper bridge arm switching tubes and the lower bridge arm switching tubes are arranged on the left side and the right side of the overlapping space in a staggered mode.

Because the thermal paths from the switch tube to the upper substrate and the lower substrate are different, and in a partial working mode of the power module, the total loss of the upper bridge arm switch tube and the lower bridge arm switch tube may be different, the mutual center distance between the switch tubes is different, and the temperature difference exists between the upper bridge arm switch tube and the lower bridge arm switch tube corresponding to the lower substrate. The staggered arrangement of the upper bridge arm switch tube and the lower bridge arm switch tube can reduce the thermal resistance of the highest junction temperature power device in the low power module, thereby playing the roles of uniform heat dissipation and module thermal resistance reduction. It should be appreciated that in other embodiments, the power module may include N-phase half-bridges, and the number and arrangement of the switching tubes in each phase half-bridge may be the same or different.

EXAMPLE six

Fig. 28 is a cross-sectional view of a half-bridge module according to a sixth embodiment of the present disclosure, in which the switching elements are planar power devices. As shown in fig. 28, the half-bridge module of this embodiment is similar to the half-bridge module of the first embodiment, and fig. 28 is similar to fig. 4 of the first embodiment, and the main difference is that the switching tube of the first embodiment is a vertical device, and the switching tube of this embodiment is a planar device.

Optionally, the upper arm switch tube 711 and the lower arm switch tube 721 are both planar devices, such as GaN devices; the power electrode of the device is fanned out at one side of the chip, the side from which the power electrode is led out is called an electrode side, and the side opposite to the electrode side is called a non-electrode side. The electrode layers of the switching tube are connected to the substrate by a connecting material, such as solder, and then an electrical connection between the lower substrate 5 and the upper substrate 6 is made via the connecting stud 18.

It should be appreciated that in other embodiments, the electrodeless layer of the switch tube may be connected to the substrate. The switching tube in the first to fifth embodiments may also partially or entirely adopt a planar power device, and other structures are similar.

EXAMPLE seven

Fig. 29 is an equivalent circuit diagram of a half-bridge module with a clamping capacitor according to a seventh embodiment of the disclosure; fig. 30 is a schematic diagram of a half-bridge module with a clamping capacitor according to a seventh embodiment of the disclosure. As shown in fig. 29 to fig. 30, the half-bridge module of the present embodiment is similar to the half-bridge module of the first embodiment, and the main difference is that the half-bridge module of the present embodiment further includes a clamping capacitor Cin.

Optionally, the clamping capacitor Cin is disposed between the upper substrate and the lower substrate, one end of the clamping capacitor Cin is electrically coupled to the P-pole conductor 10, and the other end of the clamping capacitor Cin is electrically coupled to the N-pole conductor 20. A clamping capacitor Cin is placed in the power module, the area surrounded by a corresponding high-frequency loop is reduced when the device is turned off, and the parasitic inductance of the loop is also reduced. Specifically, when the clamp capacitor Cin is not placed in the module, the loop parasitic inductance value is Lout + Lin; after the clamp capacitor Cin is placed in the module, the loop parasitic inductance value becomes Lin and the inductance value decreases.

It should be noted that the clamping capacitor Cin may be disposed at the front end and the rear end of the connecting bridge 33, or may pass through a through hole in the connecting bridge 33, and the disclosure does not limit the location of the clamping capacitor Cin.

Example eight

Fig. 31 is a circuit diagram of a two-phase half-bridge module according to an eighth embodiment of the disclosure; fig. 32 is an isometric view of a two-phase half-bridge module configuration of an eighth embodiment of the present disclosure; fig. 33 is a schematic diagram of a partial structure of a two-phase half-bridge module according to an eighth embodiment of the disclosure, showing the switching elements disposed on the lower substrate; fig. 34 is a partial schematic structural view of a two-phase half-bridge module according to an eighth embodiment of the present disclosure, showing the switching elements and the connecting bridges disposed on the lower substrate; fig. 35 is a partial structural schematic diagram of a two-phase half-bridge module according to an eighth embodiment of the present disclosure, showing a connection structure between a switching element and an upper substrate.

As shown in fig. 31 to fig. 35, the power module of this embodiment is similar to the half-bridge module of the first embodiment, and the main difference is that the power module of this embodiment is a two-phase half-bridge module. Specifically, the two-phase half-bridge module includes a P-pole conductor 10, an N-pole conductor 20, a U-phase O-pole conductor 3001, a V-phase O-pole conductor 3002, two upper arm switches 711 and 712, and two lower arm switches 721 and 722. P pole conductor 10 is electrically coupled to first ends of upper

leg switch tubes

711 and 712; the N-pole conductor 20 is electrically coupled to the second ends of the lower

arm switch tubes

721 and 722; the first end of the lower arm switch tube 721 is electrically coupled to the second end of the upper arm switch tube 711 through a U-phase O-pole conductor 3001, and the first end of the lower arm switch tube 722 is electrically coupled to the second end of the upper arm switch tube 712 through a V-phase O-pole conductor 3002. Wherein, the projection of the P pole conductor 10 on the first reference plane and the projection of the N pole conductor 20 on the first reference plane have a first overlapping area; the projection of the minimum envelope area of the upper bridge

arm switch tubes

711 and 712 on the first reference plane and the projection of the minimum envelope area of the lower bridge

arm switch tubes

Alternatively, the P-pole conductor 10, the N-pole conductor 20, the U-phase O-pole conductor 3001, and the V-phase O-pole conductor 3002 are electrically connected to the P-pole terminal 1, the N-pole terminal 2, the U-phase O-pole terminal 301, and the V-phase O-pole terminal 302, respectively. The two-phase half-bridge module further comprises a lower substrate 5 and an upper substrate 6 which are parallel to each other, the P-pole conductor 10 is a conductive layer arranged on the lower substrate 5, and the N-pole conductor 20 is a conductive layer arranged on the upper substrate 6; each of the U-phase O-pole conductor 3001 and the V-phase O-pole conductor 3002 includes a connecting bridge structure and conductive layers disposed on the upper and lower substrates. The two upper bridge

arm switching tubes

711 and 712 are arranged on the P-pole conductor 10 together; the lower arm switch 721 is provided separately to the conductive layer on the lower substrate 5 in the U-phase O-pole conductor 3001, and the lower arm switch 722 is provided separately to the conductive layer on the lower substrate 5 in the V-phase O-pole conductor 3002. The P-level current 100 flows in from a P-level terminal 1, and the N-level current 200 flows out from an N-level terminal 2, wherein the directions of the two are opposite; the effect of inductance offset is well realized, parasitic inductance of the module can be reduced, reliability of the device is improved, and turn-off loss of the device is reduced so as to improve efficiency of the converter. In addition, the upper surface and the lower surface of the switch tube are provided with heat dissipation channels for exchanging heat with the environment, so that double-sided heat dissipation can be well realized.

Similar to the first embodiment, the upper bridge arm switching tubes and the lower bridge arm switching tubes in the two-phase half-bridge module are arranged in a staggered manner. The heat source can be uniformly distributed, so that hot spots are effectively eliminated, and the heat exchange thermal resistance between the chip with larger heat productivity and the environment is reduced. And the connection bridge in the U-phase O-pole conductor 3001 and the connection bridge in the V-phase O-pole conductor 3002 each include a bottom-side protrusion structure and a top-side protrusion structure, the bottom-side protrusion is connected to the conductive layer on the lower substrate 5 through the connection material 16, and the top-side protrusion is connected to the conductive layer on the upper substrate 6 through the connection material 16. The plurality of protruding structures of the connecting bridge are placed stably in the connecting process of the connecting materials, the structure is simple, the connecting process is facilitated, and the connecting reliability is high. And the connecting bridge can be simplified into a sheet metal structure form, and the processing cost is low. In addition, the upper bridge arm switch tubes and the lower bridge arm switch tubes are arranged in a staggered mode, so that the conducting layers on the lower substrate 5 and the upper substrate 6 are arranged in a staggered mode, and an L-shaped gap structure is formed between the upper substrate and the lower substrate. The characteristic that the bending resistance of a local linear gap structure is weak is avoided, and the bending resistance of the upper substrate and the lower substrate can be improved.

It should be noted that, in the above embodiments, there are two rows of switching tubes respectively arranged on the left and right sides of the overlapping space, and the number of the switching tubes in each row is 2 or 3. However, in other embodiments, according to the requirement of the current capacity, multiple rows of switching tubes may be arranged on the left side of the overlapping space, multiple rows of switching tubes may be arranged on the right side of the overlapping space, the number of switching tubes in each row may be any, and the arrangement of switching tubes in each row is not limited to strict linearity.

Example nine

Fig. 36 is a circuit diagram of a half-bridge module according to a ninth embodiment of the disclosure; fig. 37 is a partial structural schematic diagram of a half-bridge module according to a ninth embodiment of the present disclosure. As shown in fig. 36 to 37, the power module of the present embodiment is similar to the half-bridge module of the first embodiment, and the main difference is that the power module of the present embodiment includes four upper arm switching tubes and five lower arm switching tubes. Specifically, the half bridge module includes a P-pole conductor, an N-pole conductor, an O-pole conductor, four upper leg switching tubes 711,712, 713, and 714, and five lower leg switching tubes 721,722, 723, 724, and 725. The projection of the P pole conductor on the first reference plane and the projection of the N pole conductor on the first reference plane have two first overlapping areas; the P-pole conductor is electrically coupled to the first ends of the upper leg switch tubes 711,712, 713 and 714, the N-pole conductor is electrically coupled to the second ends of the lower leg switch tubes 721,722, 723, 724 and 725, and the first ends of the lower leg switch tubes 721,722, 723, 724 and 725 are electrically coupled to the second ends of the upper leg switch tubes 711,712, 713 and 714 through the O-pole conductor; the projection of the minimum envelope area of the upper bridge arm switch tubes 711,712, 713 and 714 on the first reference plane and the projection of the minimum envelope area of the lower bridge arm switch tubes 721,722, 723, 724 and 725 on the first reference plane have a second overlapping area, and the two first overlapping areas and the second overlapping area both have an overlapping area.

Optionally, as shown in fig. 37, the two first overlapping regions vertically correspond to the two overlapping spaces 17, the nine switching tubes are arranged in a 3 × 3 array, and the first column of switching tubes, the first overlapping space, the second column of switching tubes, the second overlapping space, and the third column of switching tubes are sequentially arranged from left to right. The first row of switching tubes is sequentially provided with a lower bridge arm switching tube 721, an upper bridge arm switching tube 712 and a lower bridge arm switching tube 724 from front to back, the second row of switching tubes is sequentially provided with an upper bridge arm switching tube 711, a lower bridge arm switching tube 723 and an upper bridge arm switching tube 714 from front to back, and the third row of switching tubes is sequentially provided with a lower bridge arm switching tube 722, an upper bridge arm switching tube 713 and a lower bridge arm switching tube 725 from front to back. Namely, the upper bridge arm switch tubes and the lower bridge arm switch tubes are arranged in a staggered manner at the left side and the right side of any overlapping space 17, so that heat sources are uniformly distributed, and parasitic inductance of the module is reduced.

It should be appreciated that in other embodiments, the present invention may further extend the switch tube laterally and longitudinally according to the size and power requirements of the power module.

Although relative terms, such as "upper," "lower," "left," "right," "front," "back," and the like, may be used in this specification to describe one element of an icon relative to another, these terms are used for convenience only, e.g., in accordance with the orientation of the examples depicted in the figures. It will be appreciated that if the device of the icon were turned upside down, the element described as "upper" would become the element "lower". When a structure is "on" another structure, it may mean that the structure is integrally formed with the other structure, or that the structure is "directly" disposed on the other structure, or that the structure is "indirectly" disposed on the other structure via another structure.

The terms "comprising" and "having" are intended to be inclusive and mean that there may be additional elements/components/etc. other than the listed elements/components/etc.; a plurality means two or more; electrically coupled means electrically connected directly or through other components.

Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope of the disclosure being indicated by the following claims.

Claims

1. A power module, comprising:

wherein the projection of the minimum envelope area of the plurality of first switch tubes on the first reference plane and the projection of the minimum envelope area of the plurality of second switch tubes on the first reference plane have a second overlapping area, and the first overlapping area and the second overlapping area have an overlapping area;

the first switch tubes and the second switch tubes located on at least one of the first side and the second side of the first overlapping area are arranged in a staggered mode, wherein the first side and the second side of the first overlapping area are arranged oppositely.

2. The power module of claim 1, further comprising:

3. The power module of claim 2, further comprising:

4. The power module of claim 1, wherein in the first conductor and the second conductor corresponding to the first overlap region, current flowing through the first conductor is in an opposite direction to current flowing through the second conductor.

5. The power module of claim 1, wherein each of the first switching tubes is provided with only one of the first, second, and third conductors above and below, and each of the second switching tubes is provided with only one of the first, second, and third conductors above and below, in a direction perpendicular to the first reference plane.

6. The power module of claim 1, wherein the first plurality of switching tubes are mounted to a first substrate and the second plurality of switching tubes are mounted to the first or second substrate.

7. The power module of claim 6, wherein the first conductor is a conductive layer disposed on the first substrate, and one of the second conductor and the third conductor is a conductive layer disposed on the second substrate.

8. The power module of claim 1, wherein the first plurality of switching tubes are disposed on the first conductor or the third conductor, and the second plurality of switching tubes are disposed on the second conductor or the third conductor.

9. The power module of claim 1, wherein the first conductor has an L-shaped configuration.

10. The power module of claim 1, wherein the projections of the first plurality of switching tubes on the first reference plane are non-overlapping, the projections of the second plurality of switching tubes on the first reference plane are non-overlapping, and the projections of the first plurality of switching tubes on the first reference plane and the projections of the second plurality of switching tubes on the first reference plane are non-overlapping.

11. The power module of claim 1, wherein the third conductor comprises:

12. The power module of claim 11, wherein the connecting bridge comprises:

13. The power module of claim 11, wherein the connecting bridge is a sheet metal part.

14. The power module of claim 1, wherein the third conductor electrically couples the second end of each of the first switching tubes to the first end of each of the second switching tubes.

15. The power module of claim 1, wherein the number of the first plurality of switching tubes and the number of the second plurality of switching tubes are equal or different.

16. The power module of claim 1, wherein the second reference plane is located between the first reference plane and the third reference plane.

17. The power module of claim 1, wherein the second conductor comprises sheet metal.

18. The power module of claim 1, further comprising a clamping capacitor, one end of the clamping capacitor being electrically coupled to the first conductor and another end of the clamping capacitor being electrically coupled to the second conductor.

19. The power module of claim 1, wherein the third conductor comprises N connection bridges, each of the connection bridges connects a portion of the first switching tubes and a portion of the second switching tubes in series in a single-phase half-bridge configuration, and the plurality of first switching tubes and the plurality of second switching tubes form an N-phase half-bridge configuration, where N is an integer greater than or equal to 2.