CN101860247A - The circuit construction of electric power of power supply changeover device - Google Patents

Abstract

A kind of power supply changeover device, at least constitute by transducer and filter capacity, described transducer is constituted by a plurality of semiconductor device, and possess positive side and minus side end that constitutes input side and the end that exchanges that constitutes outlet side, described filter capacity is connected between described positive side and the minus side end via positive side conductor and minus side conductor respectively, described positive side conductor and described minus side conductor have one group of coupling part and form tabular in the relative angle position, the mode that intersects according to the line that connects described one group of coupling part disposes each conductor surface in parallel to each other on equidirectional, a coupling part of described each conductor is connected in described filter capacity and another coupling part of described each conductor is connected in described positive side and described minus side end.

Description

The circuit construction of electric power of power supply changeover device

The present invention relates to the circuit construction of electric power of power supply changeover device, the semiconductor device that this transducer utilization is used in comprising the universal industrial field of railway locomotive is converted to direct current alternating current or alternating current is converted to direct current.

Has multiple structure though be used for the semiconductor device of power supply changeover device power circuit, but the semiconductor device that is used for power circuit of the present invention is the semiconductor module block structure, it has the collector terminal and the emitter terminal of drawing from same face side, and integrates with the injection molding agent.

In the electrical lead of common power supply changeover device power circuit, adopt growing not only but also narrow bus or electrical lead as Japanese patent gazette No.1-160373 (1989) shown in.

Because the inductance of electrical lead is bigger in this structure, therefore when opening or closing, semiconductor device can produce electric current and the bigger problem of voltage jump.

And, needing to connect the buffer circuits of big electric capacity in order to protect semiconductor device, this makes the volume of device be difficult to dwindle.

In order to reduce inductance, the total line by forming flat structures and provide the total line that comes and goes adjacent to each other to make the conductor that constitutes current path be in so-called parallel flat state.

In the dull and stereotyped state of this parallel flat, come and go that magnetic flux that conductor produces is cancelled out each other and the surface variations of magnetic flux on disappeared.

In Japan Patent open No.7-131981 (1995), No.9-47036 (1997), No.6-327266 (1994), No.7-245951 (1995) and No.9-70184 (1997), disclosed the electricity method of attachment that utilizes this principle.

In these lists of references, the total line of flat panel is put into insulating barrier and is made it be in the dull and stereotyped state of parallel flat near being placed between them, thereby reduces inductance.

But, need on smooth total line and insulating barrier, offer reach through hole for the setting tool of stationary semiconductor devices and total line such as bolt is installed.

In order to ensure insulation distance in this reach through hole, the aperture requires bigger.Because current concentration is in the narrower part of total line width, so can't obtain satisfied predetermined impedance desired value.

If cover with insulating material around the reach through hole, then the hole of total line itself can be less, but in order to make the conductor part insulation, the structure of conductor and the insulating material complexity that becomes.

And on the other hand, the spacing between the conductor narrows down, and inductance reduces, can be saturated but reduce effect.For example known conductor spacing provides bigger reduction effect when 10cm is reduced to 1cm, but can not reduce when spacing inductance when 1cm is reduced to 1mm.

Therefore, can reduce inductance and need not to make the conductor spacing to narrow to the limit (for example up to the dull and stereotyped thickness of slab of insulation).

And in open No.4-133669 (1992) of Japan Patent and No.6-225545 (1994), describe the structure that the hole is not provided and utilizes plane conductor, and as mentioned above, there is not the problem of insulation in the reach through hole.But conductor must be done bending process.

And in the open No.6-225545 (1994) of Japan Patent, mention dielectric ceramic is provided between conductor, but used material is restricted.

And in Japan Patent open No.5-292756 (1993), No.6-38507 (1994) and No.9-117126 (1997), disclosed a kind of method that reduces coupling part inductance between power circuit semiconductor device and the filter capacity.

Either way utilized the parallel-plate conductive lead wire above, link links to each other with another conductor by the hole of insulating barrier between the conductor.

But in the above-mentioned structure that reach through hole is provided, for the true insulation distance from conductor with reach through hole to the terminal that links to each other with other conductor by reach through hole, the aperture requirement is bigger.In this case, current concentration is in the narrower part of the conductor width that comprises reach through hole, and is difficult to obtain satisfied predetermined impedance desired value.

If cover with insulating material around the reach through hole, then the hole of total line itself can be less, but in order to make the conductor part insulation, the structure of conductor and the insulating material complexity that becomes.

At the problems referred to above, target of the present invention is to reduce the inductance that is electrically connected and make the circuit construction of electric power of power supply changeover device simple.

And other target of the present invention is to reduce the inductance that connects the lead-in wire of filter capacitor and semiconductor device in the power circuit.

Utilize these structures, can dwindle or omit the requisite buffer circuits that is considered to of power circuit.

In order to realize above-mentioned target, feature of the present invention is as follows.

The circuit construction of electric power of power supply changeover device comprises the semiconductor module of at least two described power circuit one phases of correspondence; The positive side conductor (P conductor) that the collector terminal (PC end) of one of them described semiconductor module is linked to each other with the DC power supply anode; The minus side conductor (N conductor) that the emitter terminal (NE end) of another described semiconductor module is linked to each other with described DC power supply negative terminal; And the AC side conductor (U conductor) that the collector terminal (NC end) of the emitter terminal (PE end) of described one of them semiconductor module and described other semiconductor module is linked to each other with the AC side.

Described positive side conductor, described minus side conductor and described AC side conductor form the plane total line; And

Described plane total line supports by the distolateral hierarchy of corresponding each described semiconductor module, thereby keeps the insulation between them, wherein

When the described collector terminal (PC end) of semiconductor module, described emitter terminal (PE end), described collector terminal (PE end) and described emitter terminal (NE end) during according to this sequence arrangement being aligned, described positive side conductor (P conductor), described AC side conductor (U conductor) and described minus side conductor (N conductor) from described semiconductor module BOB(beginning of block) according to this order or opposite sequence arrangement.

Therefore when conductor linked to each other with semiconductor module by bolt, other conductor need not to arrange reach through hole.

And the circuit construction of electric power of power supply changeover device comprises a plurality of semiconductor modules, and power circuit comprises: the positive side that constitutes the direct current input side exchanges the interchange end of outlet side with minus side end and formation; And the filter capacity that links to each other with described minus side end at described positive side by each described positive side conductor and described minus side conductor, wherein

Described positive side conductor and described minus side conductor form tabular respectively, and it comprises one group of coupling part on relative angular position,

A line of one group of coupling part is crossing with another line of the described minus side conductor coupling portion branch of constraint on the described positive side conductor of feasible constraint thereby described positive side conductor and described minus side conductor are arranged in parallel,

Each coupling part of described positive side conductor and described minus side conductor links to each other with filter capacity, and

Each other coupling part of described positive side conductor and described minus side conductor links to each other with described minus side end with described positive side respectively.

Fig. 1 is the end view of first embodiment of the invention.

Fig. 2 is the circuit diagram that power supply changeover device one phase electricity embodiment illustrated in fig. 1 connects.

Positive side conductor in Fig. 3 A, 3B, the 3C presentation graphs 1, AC side conductor and minus side conductor.

Fig. 4 A, 4B are the end view of second embodiment of the invention.

Fig. 5 A, 5B are the end view and the top view of third embodiment of the invention.

Fig. 6 A is the top view of fourth embodiment of the invention, and Fig. 6 B is an end view, and Fig. 6 C is other end view of Fig. 6 A.

Fig. 7 is the circuit diagram that the electricity of a phase in three layers of the corresponding power transducers connects.

Fig. 8 A is the top view of fifth embodiment of the invention, a phase of its corresponding three layers of power supply changeover device, and Fig. 8 B, 8C are end view.

Fig. 9 represents minus side conductor, the second intermediate electric potential conductor, positive side conductor, the first intermediate electric potential conductor and intermediate electric potential side conductor respectively.

Figure 10 A, 10B are the front view and the end view of sixth embodiment of the invention.

The electric current that Figure 11 A, 11B show positive side conductor 72 shown in Figure 10 A, the 10B and minus side conductor 73 distributes.

Figure 12 shows the structure of the positive side conductor 25 and the minus side conductor 35 of seventh embodiment of the invention.

The electric current that Figure 13 A, 13B show positive side conductor 25 shown in Figure 12 and minus side conductor 35 distributes.

Below by accompanying drawing the embodiment of the invention is described.

In an embodiment, IGBT (insulated gate bipolar transistor) is used as semiconductor module.

But other module such as metal oxide semiconductor transistor, bipolar transistor also can be included in the semiconductor module of the present invention.

Fig. 1 is a first embodiment of the invention, and shows the end view structure of power supply changeover device one phase.

Label 1 is positive side IGBT module, and 2 is the minus side of IGBT module, and 3 is the positive side (hereinafter referred to as the P conductor) of conductor, and 4 is AC side conductor (hereinafter referred to as the U conductor), and 5 is minus side conductor (hereinafter referred to as the N conductor), and 6-9 is a bolt, and 10-13 is the end pad.

The collector terminal of IGBT module 1 is called PC and emitter terminal is called PE.Equally, the collector terminal of IGBT module 2 and emitter terminal are called NC and NE.

In an embodiment, when the collector terminal of separately IGBT module and emitter terminal are arranged in a straight line, thereby the IGBT module of the positive side of a phase and minus side is connected with conductor as shown in Figure 2.

Fig. 2 shows a phase of power supply changeover device, and it finishes the conversion of direct current to interchange or AC-to DC.

According to annexation shown in Figure 2, positive side conductor 3 links to each other with the end PC of IGBT module 1 with the anode (being equivalent to the filter capacity 71 among Fig. 2) of DC power supply,

AC side conductor 4 links to each other with the end PE of unillustrated ac output end, IGBT module 1 and the end NC of IGBT module 2, and

Minus side conductor 5 links to each other with the end NE of IGBT module 2 with the negative terminal (filter capacity 71 in the corresponding diagram 2) of DC power supply.

In Fig. 1, IGBT module 1 and 2 conductor are called bottom and the top upper strata that is called.

In Fig. 1, positive side conductor 3 is arranged in lower floor, and it links to each other with the end PC of IGBT module 1 with pad 10 by bolt 6.

In this embodiment, bolt 6 links to each other with conductor with pad 10 and will hold PC to link to each other with positive side conductor 3, and the positive side conductor 3 of mechanical support.

On positive side conductor 3, directly arrange AC side conductor 4.

In this case, the interval between positive side conductor 3 and the AC side conductor 4 is greater than the height of bolt 6 heads.

Therefore need not perforate on AC side conductor 4 so that bolt 6 passes through.

AC side conductor 4 links to each other with the end PE of IGBT module 1 with pad 11 by bolt 7 and links to each other with the end NC of IGBT module 2 with pad 12 by bolt 8.

Minus side conductor 5 is arranged in the upper strata, and AC side conductor 4 is greater than the height of bolt 7 and 8 heads, and links to each other with the end NE of IGBT module 2 with pad 13 by bolt 9 with the same manner.

Therefore need not perforate on minus side conductor 5 so that bolt 7 and 8 heads pass through.

In the embodiment shown in fig. 1, except above, positive side conductor 3, AC side conductor 4 and minus side conductor 5 begin to arrange in order from lower floor.

On the contrary, thus minus side conductor 5, AC side conductor 4 and positive side conductor 3 can begin to arrange in order with the same manner and reduce inductance from lower floor.

But because at the top conductor 3 of having placed maximum potential, so when the next interim short circuit easily of external foreign matter.

Therefore preferably minus side conductor 5 is placed on top on.

In Fig. 1, conductor 3,4,5 has slab construction respectively, and each output is arranged in the upside of IGBT module 1,2.

Under the situation that the multiple structure of horizontal placement shown in Figure 1 and multi-phase power supply inverter constitute thus, can be transversely arranged and need not tolerance and overall size can be very little.

Fig. 3 A, 3B, 3C show from the structure (as shown in Figure 1) of the conductor 3,4,5 of IGBT module top view.Each conductor has slab construction, and has placed each hole 32,42,43,52 that conductor is linked to each other with the end of IGBT module by bolt 6.

And, provide the output 30,40,50 that is used for connecting unillustrated external circuit respectively, and form the hole of connecting bolt on top.

Utilize this structure of present embodiment, constitute dull and stereotyped conductor 3,4,5 parallel placements, compare with the situation that common conductive lead wire is not only long but also narrow, the inductance of power circuit is suppressed largely.

And owing to need not the hole that bolt 6,7,8 heads are passed through is provided in each conductor 4,5, so need not to make these hole insulation.

And because by cutting plane conductor and perforate, conductor 3,4,5 has simple structure respectively, so assembling conductor 3,4,5 is very easy to.

And notice the order of the output of drawing from conductor, from Fig. 3 apex angles, the output of the output of P conductor and U conductor begins to arrange in order from a left side.

That is, because the output of N and P conductor (reasonable is that the P end is opposite with the N end) adjacent to each other, so the effect that can bring for reduction inductance and stabling current balance.

In addition, in first embodiment shown in Figure 1, determine to constitute interval between each flat board of each conductor by the height of adjusting pad 10,12 so that basic electric insulation to be provided, insulating material may reside in the interval between the flat board.

Fig. 4 shows second embodiment of the invention, and Fig. 4 A shows end view and Fig. 4 B shows the structure of AC side conductor 4.

The direction that second embodiment and the difference of first embodiment are the output of drawing from conductor 4 is different with the output direction of drawing from positive side conductor 3 and minus side conductor 5, and laterally places.

According to this layout, conductor 3 and conductor 4 are arranged in same one deck, and conductor 5 is placed on the layer.

Therefore compare with first embodiment, conductor 3 and 5 can closely be placed, and inductance can further reduce.

And device highly has lower advantage.

Shown in Fig. 4 B, the end of conductor 4 has to lead to the right (the perhaps left side of Fig. 4 B) of device.

Even other conductor 3 and 5 leads to top, also have only conductor 4 laterally to draw, when multi-phase power supply inverter shown in Fig. 4 A constitutes by arranging a plurality of structures, because the IGBT module can't be placed on end parts, so the device lateral size is bigger.

If therefore embodiment has enough spaces at installing space, and need to reduce upper dimension and more inductance, then this structure is effective.

Fig. 5 A is the end view of third embodiment of the invention and Fig. 5 B is a top view.

In above-mentioned first and second embodiment, IGBT module 1,2 edges are always to placement, and promptly collector terminal and emitter terminal are arranged as straight line.

But in this embodiment, the collector electrode of IGBT module 1 along the right of accompanying drawing arrange and the emitter 1 of IGBT module along the left of accompanying drawing to arrangement, thereby IGBT module 2 is placed on the bottom makes the collector electrode of IGBT module 2 arrange and emitter is arranged along the right direction along left direction, and the position of same collector and emitter can be reversed left to right and turn upside down.

According to this arrangement of IGBT module, the output of drawing from each conductor can be arranged and conductor 3 and 4 can be placed on same one deck along same direction, and conductor 5 can be placed as double-layer structure is provided, thereby makes device extremely thin.

Even structure also can reduce inductance in this manner.

Compare with the embodiment of Fig. 1, lateral dimension is bigger, but vertically less advantage is arranged.

Fig. 6 A, 6B, 6C show top view and two kinds of end views of fourth embodiment of the invention.

The IGBT module of three-phase U, V, W is placed in the radiating block 101 shown in Fig. 6 A, 6B, 6C, and shows the power circuit general construction of the transducer that comprises filter capacitor 71.

Each is with the module structure formation of three IGBT circuit comprising parallel connection shown in Figure 2.

For the connection situation of conductor is shown, in the U of top view phase part, show the situation that is connected of positive side conductor 3 by removal minus side conductor 5 and AC side conductor 4, in the V of top view phase part, by removing the connection situation that minus side conductor 5 shows AC side conductor 4, in the W of top view phase part, show the connection situation of minus side conductor 5.

But in Fig. 6 C, filter capacity 71 is placed on minus side conductor 5 one sides, and the anode of electric capacity links to each other with positive side conductor 3 with minus side conductor 5 by conductor 72,73 with negative terminal.

And insulation dull and stereotyped 104 is arranged between conductor 72 and 73.In these embodiments, the difference of first, second and the 3rd embodiment is as follows:

(1) provides the slit (3S-5S) of desired depth in each plane conductor 3,4,5 end, and have the base portion (3f-5f) of predetermined length by 3,4,5 formation of bent flat plate conductor.

In addition, the end parts of IGBT module end and connecting bolt is provided in the end of base portion.

(2) interval of conductor 3,4,5 is by the base portion adjustment of bending, and conductor 3 is arranged in lowermost layer, and conductor 4 is positioned at the intermediate layer, and conductor 5 is positioned at top.

(3) in the middle of the output of conductor 3 was positioned at, the output of conductor 4 was positioned at the right, and the output of conductor 5 is positioned at the left side.

(4) between conductor 3 and 4 and 4 and 5, provide insulation dull and stereotyped 14,15.

According to above-mentioned (1), (2), to compare with embodiment illustrated in fig. 1, conductor needs bending, but need not to hold pad and can reduce parts number.

And provide slit 3s, 4s, 5s respectively between the IGBT of conductor 3-5 end, and in order to keep the balance of IGBT end electric current, they are useful.When IGBT module parallel connection shown in Fig. 6 A, 6B, 6C and IGBT module comprised a plurality of end, the current balance type of end was very important.

The imbalance of each end inductance causes holding the imbalance of electric current.When being example with conductor 3, crossover current flows in the loop of IGBT module 1 lead and conductor 3 formation.

For example the flow path of crossover current is the inner lead of 3f-＞3-3f-＞IGBT module 1.

By slit 35 is provided, can increase overall length, loop inductance increases than the loop of long electrical wave, so crossover current reduces and can balance element in parallel between electric current.

Finish AC side conductor 4 and minus side conductor 5 according to the same manner.

According to the situation of (2) and (3), because conductor 3 is placed on lowermost layer, so that overall length becomes is the shortest.Be placed on top conductor 5 and become the longest on the contrary.

In the conductor 3 that is placed on lowermost layer, because the close together between output and the IGBT module end, so provide difference easily for each current path, so be difficult to balanced balanced current.

Therefore the current balance type that flows into element in parallel can improve by place output in the centre.

The output of the output of conductor 3 and minus side conductor 5 is adjacent to each other, and the mutual inductance minimum when IGBT module 1 or 2 is switched.

And it is evident that the layout of intermediate layer conductor and top conductor output can be replaced on the right and between the left side, can reach above-mentioned effect equally.

Even when the minus side conductor is positioned at lowermost layer and positive side conductor is positioned at and replaces the conductor sequence when top, the advantage in the middle of the conductor output of lowermost layer is placed on also can reach.

According to above-mentioned (4), shown in first and second embodiment, need not to make distance between each conductor greater than being used for the height of bolt (6a-9c) of link, by being narrowed down, distance can reduce inductance.

The example that the present invention is used for three grades of converters is below described.

Three grades of converters are a kind of power supply changeover devices, it with direct current be converted to comprise three kinds of electromotive force alternating currents (according to the positive and negative and intermediate electric potential of the separation potential capacitance of unillustrated DC power supply parallel connection) or opposite, it is equivalent to the circuit of a phase shown in Figure 7.

Fig. 8 shows the structure of the power circuit of three grades of converters shown in Figure 7.

The power circuit that below utilizes Fig. 7 to describe three grades connects.

Positive side filter electric capacity 210 is connected with minus side filter capacity 211.

From the P point of filter capacity 210 positive sides, IGBT module 201,202,203,204 is connected in order.

In IGBT module 201,202,203 and 204, the same with Fig. 6, each module comprises three groups of collector terminals and emitter terminal.

And positive side clamping diode 205 is connected to the tie point of IGBT module 201 and 202 from the neutral point between the filter capacity 210-211, and the point that minus side clamping diode 206 connects between IGBT modules 203 and 204.

Positive side conductor 3 is connected to the P point collector terminal PC1 of IGBT module 201, AC side conductor 4 is connected to unillustrated load with the emitter terminal PE2 of IGBT module 202 and the collector terminal NC3 of IGBT module 203, and minus side conductor 5 is connected to the N point with the emitter terminal NE4 of IGBT module 204.

Conductor 207 links to each other the emitter terminal PE1 of IGBT module 201 and the collector terminal PC2 of IGBT module 202 with the cathode terminal PDK of positive side clamping diode 205, conductor 208 links to each other the emitter terminal NE3 of IGBT module 203 and the collector terminal NC4 of IGBT module 204 with the anode tap NDA of minus side clamping diode 206, and conductor 209 links to each other the C point with the anode tap PDA of clamping diode 205 and the cathode terminal NDK of clamping diode 206.

In Fig. 8, be positioned at top AC side conductor 4 easy to understand, but the structure indigestion of bottom layer conductors.

Therefore Fig. 9 A, 9B show the conductor 3,207,208 of the bottom and 5 preliminary shape and layout, and Fig. 9 C shows the preliminary shape of intermediate layer inner wire 209.

In each conductor, provide slit between IGBT module 201-204 and the IGBT that the links to each other end, thereby improved the balance of IGBT end electric current according to mode shown in Figure 6.

And in conductor 4, the IGBT end that connects IGBT module 202 with provide bigger slit 49e between the IGBT that is connected IGBT module 203 holds.

So the current path length of flow through conductor 202 and 203 is elongated slightly and the inductance increase is a little, but end current balance type of IGBT module 202 and 203.

In conductor 207,208, have hole 2070,2080.

Thereby this makes conductor 207,208 and diode end 2091,2092 not contact conductor 209 is connected with clamping diode 205,206.

Can replace above-mentioned hole with slit.See over as the end from IGBT module 201 and 204 shown in Figure 6, be positioned at the bottom and current path and be positioned at the centre, and the electric current of flowing through in the IGBT element obtains balance than the output 30 of the conductor 3 of lacking and the output 50 of conductor 5.

In order to reduce the mutual inductance of three grades of inverter power supply circuit, with the output 2090 of the output of the output 2090 of the output 30 of positive side conductor 3 and neutral conductor 209 or minus side conductor and neutral point conductor 209 mutually near being favourable.

Therefore output 30 and 50 is placed in the middle of each conductor, the output 2090 of neutral point conductor 209 is between output 30 and 50.

Therefore realize the balance of each circuit as mentioned above, and realized reducing of inductance.

In other AC side conductor 4, thereby output is divided into two the right and left sides of holding 40a and 40b to be arranged in conductor 3,5.So the circuit of the conductor of flowing through has obtained good balance.

As mentioned above, in the power circuit structure of three grades of converters, realized the low inductance and the current balance type of power circuit structure by simple relatively structure.

If the output of AC side conductor 4 is between conductor 3 and 5, and the end of conductor 209 is divided into two parts, thereby two parts are positioned at right-hand member and left end, then can reach same effect.

In Fig. 6 A, 6B6C and 8A, 8B, 8C, the IGBT module that comprises three groups of collector and emitter ends is identical with example, but IGBT number in parallel is not limited to these examples.

When the IGBT module that only has an end respectively was in parallel, structure was similar.

In the above-described embodiments, because the structure of conductor is a tabular, so can be used for the means of transportation such as electric motor car.

In this case, the vibrations of vehicle body may produce unwanted sound, and parts may collide and damage.

If conductor is thicker, then can not shake, but weight increases.

In this case, each conductor forms groove, and conductor supports by dielectric support, and conductor edge is crooked, thereby prevents vibrations under the not thick situation of conductor, and can prevent the damage of unwanted sound and parts.

The embodiment of the power circuit of the semiconductor module that connects with mode shown in Figure 2 and filter capacity is below described.

Figure 10 A shows semiconductor module power circuit one phase structure shown in Figure 1 and the filter capacity that links to each other, and Figure 10 B is the end view of Figure 10 A of seeing from other direction.

In Figure 10 A, 10B, label 72 is the anode-side conductor, it links to each other positive side conductor 3 with the anode of filter capacity 71, label 73 is the minus side conductor, it links to each other the negative terminal of minus side conductor 5 with filter capacity 71, label 74 is the coupling part, it links to each other positive side conductor 72 with the anode of filter capacity 71, label 75 is the coupling part, it links to each other the negative terminal of minus side conductor 73 with filter capacity 71, and label 76 is the coupling part, and it links to each other positive side conductor 72 with positive side conductor 3, label 77 is the coupling part, and it links to each other minus side conductor 73 with minus side conductor 5.

Positive side conductor 73 is the rectangular conductor flat board, comprises the bossing of relative angle part, and the coupling part 75 of one of them bossing links to each other with the negative terminal of filter capacity 71, and the coupling part 77 of other bossing links to each other with minus side conductor 5.

And positive side conductor 72 is being a conductor plate, and the structure that comprises is, minus side conductor 73 upsets and be provided in the back side of minus side conductor 73.

Positive side conductor 72 connect coupling parts 74 filter capacity 71 anode tap and according to the positive side conductor 3 that is connected with the same mode of minus side conductor 73 in the coupling part 76.

And the center rectangle part overlapping parallel to each other of positive side conductor 72 and minus side conductor 73, and coupling part 75 and coupling part 77, coupling part 74 crosses one another with coupling part 76.

That is, flow into the electric current mutually orthogonal of positive side conductor 72 and minus side conductor 73.

And positive side conductor 72 and minus side conductor 73 overlap the lateral width W of part greater than the anode of filter capacity 71 and the distance L between the negative terminal, and just the spacing of side conductor 72 and minus side conductor 73 is defined as not taking place to discharge.If between conductor 72,73, place insulating material, conductor separation is narrowed down.

Figure 11 A, 11B show the CURRENT DISTRIBUTION of positive side conductor 72 and minus side conductor 73 respectively.In these accompanying drawings 11A, 11B, each curve shows power line, and the interval of curve is narrow more, and then current density is strong more.

In Figure 11 A, 74 electric currents that flow out flow to coupling part 76 by positive side conductor 3 from the coupling part by the anode of filter capacity 71.

In Figure 11 B, 77 electric currents that flow out flow to coupling part 75 by the negative terminal of filter capacity 71 from the coupling part by minus side conductor 5.

Like this, just the power line of side conductor 72 and minus side conductor 73 is dispersed in each conductor.

This is that promptly the coupling part of the coupling part of filter capacity 71 and conductor is near IGBT module 1,2 because the interior electric current that flows into of conductor is taken from the big part of other conductor current density.

Because power line is dispersed in the conductor, so the lead-in inductance between filter capacity 71 and the semiconductor circuit reduces.

And because the opposite current of positive side conductor 2 and minus side conductor 3 is mobile, so magnetic flux is cancelled each other and reduced lead-in inductance.

Figure 12 is the schematic diagram of other embodiment of the present invention, and show the structure of positive side conductor 25 and minus side conductor 35, they link to each other filter capacity with the power circuit of semiconductor module, this module comprises the three phase units that filter capacity is linked to each other with semiconductor module one shown in Figure 2.

Positive side conductor 25 comprises protruding coupling part 74u, 74v, 74w, and they link to each other with the anode of the filter capacity 71u-71w that is provided in each facies unit and comprise and each protruding coupling part 76u, 76v and 76w of linking to each other of the anode of semi-conductor electricity source circuit mutually.

Equally, minus side conductor 35 comprises protruding coupling part 75u, 75v, 75w, and they link to each other with the negative terminal of the filter capacity 71u-71w that is provided in each facies unit and comprise protruding coupling part 77u, 77v and the 77w that links to each other with the negative terminal of semi-conductor electricity source circuit.

Compare with the embodiment of Figure 10, in the embodiment of Figure 10, positive side conductor 72 and minus side conductor 73 lay respectively at each phase filter electric capacity with each mutually between the semi-conductor electricity source circuit, on the contrary in the present embodiment, shared one group of positive side conductor 25 and minus side conductor 35 between the filter capacity of each phase and each semi-conductor electricity source circuit mutually.

Figure 13 A and 13B show the CURRENT DISTRIBUTION of positive side conductor 25 shown in Figure 12 and minus side conductor 35, and Figure 13 A shows the CURRENT DISTRIBUTION that flows to the coupling part 76v of the positive side conductor of each semiconductor power circuit of V phase from coupling part 74u, the 74v of each phase filter electric capacity anode, 74w, and Figure 13 B shows from coupling part 77u, the 77v of the minus side conductor of each semiconductor power circuit of U, V, W phase, the CURRENT DISTRIBUTION that 77w flows to the coupling part of each filter capacity negative terminal 77v.

According to this embodiment, thereby owing to shared one group of positive side conductor 24 links to each other with each filter capacity with minus side conductor 34 each semiconductor power circuit with U phase, V phase, W phase, so can avoid parts to increase.

And electric current is the same with Figure 11 A, 11B scatters, and lead-in inductance has obtained inhibition.

And U phase, V have been improved mutually and the current balance type of W power transducer mutually.

As mentioned above, according to the present invention, each conductor of power supply changeover device need not to provide the hole of bolt head, and need not to make hole inner wire SI semi-insulation.

Therefore insulation reliability convenient and device improves.

And under situation about passing through semiconductor module formation in parallel power supply changeover device, the electric current that flows into each semiconductor device equates that the efficient of each semiconductor device makes full use of, so power supply changeover device has been realized microminiaturization effectively.

And in being connected of each semiconductor module and module and filter capacitor, inductance is reduced greatly, and the jump of semiconductor device voltage is inhibited, and the ability of element is not fully exerted.Therefore the buffer circuits that uses at present can omit or be microminiaturized.

Claims (5)

1. power supply changeover device, at least constitute by transducer and filter capacity, described transducer is constituted by a plurality of semiconductor device, and possess positive side and minus side end that constitutes input side and the end that exchanges that constitutes outlet side, described filter capacity is connected between described positive side and the minus side end via positive side conductor and minus side conductor respectively, this power supply changeover device is characterised in that

Described positive side conductor and described minus side conductor have one group of coupling part and form tabular in the relative angle position, the mode that intersects according to the line that connects described one group of coupling part disposes each conductor surface in parallel to each other on equidirectional, a coupling part of described each conductor is connected in described filter capacity and another coupling part of described each conductor is connected in described positive side and described minus side end.

2. power supply changeover device according to claim 1 is characterized in that,

Bigger with the width of line parallel between a described coupling part that is connected described positive side conductor and described minus side conductor than the distance between a described coupling part of described each conductor.

3. power supply changeover device, at least constitute by multiphase converter and filter capacity, described multiphase converter is made of heterogeneous transducer, described heterogeneous transducer is constituted by a plurality of semiconductor device, and possess positive side and minus side end that constitutes input side and the end that exchanges that constitutes outlet side, described filter capacity is connected between the described positive side and minus side end of transducer of described each phase via positive side conductor and minus side conductor respectively, and this power supply changeover device is characterised in that

Described positive side conductor and described minus side conductor have a plurality of coupling parts near a side of a distolateral and decentralized configuration on one side of described each conductor, with near a plurality of coupling parts of the opposing party of described each conductor and another distolateral and decentralized configuration opposed limit, described one side and form tabular, on equidirectional, dispose each conductor surface according to the cross one another mode of described one distolateral and described another distolateral line that connects described each conductor respectively abreast, a plurality of coupling parts of the described side of described each conductor are connected to the filter capacity of each phase, and a plurality of coupling parts of the opposing party of described each conductor are connected to the described positive side and the described minus side end of each phase converter.

4. power supply changeover device, at least constitute by multiphase converter and filter capacity, described multiphase converter is made of heterogeneous transducer, described heterogeneous transducer is constituted by a plurality of semiconductor device, and possess positive side and minus side end that constitutes input side and the end that exchanges that constitutes outlet side, described filter capacity is connected in via positive side conductor and minus side conductor between the described positive side and minus side end of transducer of described each phase, and this power supply changeover device is characterised in that

Described positive side conductor and described minus side conductor have the distolateral and coupling part of configuration near one side of described each conductor, with near a plurality of coupling parts of the opposing party of described each conductor and another distolateral and decentralized configuration opposed limit, described one side and form tabular, on equidirectional, dispose each conductor surface according to the cross one another mode of described one distolateral and described another distolateral line that connects described each conductor respectively abreast, a described coupling part of described each conductor is connected in filter capacity, and a plurality of coupling parts of the opposing party of described each conductor is connected to the described positive side and the described minus side end of each phase converter.

5. according to any described power supply changeover device in the claim 1～4, it is characterized in that,

Described positive side conductor and minus side conductor are roughly the same shape.

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