CN101853774A - Heating cavity and semiconductor processing device - Google Patents
Heating cavity and semiconductor processing device Download PDFInfo
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- CN101853774A CN101853774A CN200910081053A CN200910081053A CN101853774A CN 101853774 A CN101853774 A CN 101853774A CN 200910081053 A CN200910081053 A CN 200910081053A CN 200910081053 A CN200910081053 A CN 200910081053A CN 101853774 A CN101853774 A CN 101853774A
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- thermocouple
- heated chamber
- support plate
- semiconductor processing
- groove
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Abstract
The invention discloses a heating cavity and a semiconductor processing device. The inside of the heating cavity is provided with a support plate which can move in the longitudinal direction and be used to support a substrate to be processed; the side of the support plate is provided with a through groove; the side wall of the heating cavity is provided with a thermocouple, the front end of the thermocouple extends in the groove and is compressed by an elastic device, thus the thermocouple can contact with the support plate tightly, the measured temperature is the temperature of the support plate, the error is smaller; and the thermocouple is hidden in the groove, thus the interference of the heating lamp can be avoided and the temperature measurement is accurate. The heating cavity of the invention can be used in the semiconductor processing devices such as plasma enhanced chemical vapor deposition devices, solar cell manufacturing devices, semiconductor chip manufacturing devices and TFT-LCD panel manufacturing devices.
Description
Technical field
The present invention relates to a kind of semiconductor processing equipment, relate in particular to a kind of heated chamber and semiconductor processing equipment.
Background technology
In field of semiconductor processing, as fields such as PECVD (plasma enhanced chemical vapor deposition), manufacture of solar cells, semiconductor chip manufacturing, TFT (tft liquid crystal demonstration) panel manufacturings, substrate need be heated to the temperature that needs in heated chamber, carry out processing technology afterwards.
As shown in Figure 1, in the prior art, the PECVD system comprises loading stage, load chamber and warm-up block, process cavity, unloading chamber and refrigerating module, relieving platform etc.In the pecvd process process, substrate is loaded onto on the support plate at loading stage, carries out The pre-heat treatment by warm-up block in load chamber, is transferred into process cavity and carries out pecvd process after substrate reaches the technological temperature requirement, spread out of by the unloading chamber at last, unload at relieving platform.
Wherein, load chamber plays the effect of heated chamber simultaneously, and the heating module by inside heats substrate, makes the temperature of substrate reach the required temperature of technology in the short period of time.For the temperature that makes substrate is maintained, need heat and reach identical temperature in the lump to the support plate of carrying substrates.
As shown in Figure 2, in the prior art, generally adopt the mode of infrared lamp 2 heating, because the speed of infrared heating is very fast.And be to improve the speed of heating and the uniformity of support plate temperature about in the of 1, adopt the mode of double-deck infrared heating up and down usually.
Semiconducter process is generally very strict to the requirement of temperature, in above-mentioned technical process,, after finishing, heating moves to process cavity again because support plate 1 is the load chamber that is moved into from loading stage, do not have a fixing stage apparatus, this has brought difficulty with regard to the work of giving thermometric.
The method of a kind of thermometric of the prior art is that thermocouple 3 is insinuated near the support plate 1, measures the temperature around the support plate 1.
There is following shortcoming at least in above-mentioned prior art:
Because what measure is not the temperature of support plate 1 itself, temperature on every side has error with the temperature of support plate 1; In addition, thermocouple 3 is shone directly into by infrared lamp 2, also can disturb measuring to produce.
Summary of the invention
The purpose of this invention is to provide a kind of thermometric heated chamber and semiconductor processing equipment accurately.
The objective of the invention is to be achieved through the following technical solutions:
Heated chamber of the present invention comprises the support plate that can vertically move in heated chamber, the groove that connects before and after the side of described support plate is provided with, and the sidewall of this heated chamber is provided with thermocouple, and the front end of described thermocouple extend in the described groove.
Semiconductor processing equipment of the present invention, this semiconductor processing equipment comprises above-mentioned heated chamber.
As seen from the above technical solution provided by the invention, heated chamber of the present invention and semiconductor processing equipment, because the groove that connects before and after the side of support plate is provided with, the front end of thermocouple extend in the groove, make thermocouple can contact support plate closely, measured temperature is exactly the temperature of support plate, and error is less; Thermocouple is hidden among the groove, can also avoid heating the interference of fluorescent tube, and thermometric is accurate.
Description of drawings
Fig. 1 is the side structure schematic diagram of PECVD system in the prior art;
Fig. 2 is support plate heating and a thermometric schematic diagram in the prior art;
Fig. 3 is the structural representation of support plate among the present invention;
Fig. 4 is support plate thermometric schematic diagram among the present invention.
Embodiment
Heated chamber of the present invention, its preferable embodiment is to comprise the support plate that can vertically move in heated chamber.
As shown in Figure 3, Figure 4, dig down the groove 4 that front and back connect in the side of support plate 1 direction of advance, the sidewall of heated chamber is provided with thermocouple 3, and the front end of thermocouple 3 extend in the groove 4.Thermocouple 3 can be installed on the sidewall of heated chamber by elastic device 5.When support plate 1 advanced to the position of thermocouple 3, thermocouple 3 had just probeed into the position of groove 4 and has closely contacted with support plate 1, and elastic device 5 compresses thermocouple 3 and groove 4.
Be the infringement that prevents to rub to thermocouple 3, can on thermocouple 3, overlap the closely coat of metal of contact of one deck.
In heated chamber, generally be provided with infrared ray heating tube, infrared ray heating tube can be located at support plate 1 above or below, or the above and below of support plate 1 is equipped with, shadow shield can be provided with between thermocouple 3 and the infrared ray heating tube, the interference of infrared ray heating tube can be avoided thermocouple 3.
Semiconductor processing equipment of the present invention, its preferable embodiment is that this semiconductor processing equipment comprises above-mentioned heated chamber.
This semiconductor processing equipment can be one or more equipment such as plasma enhanced chemical vapor deposition equipment, manufacture of solar cells equipment, semiconductor chip manufacturing equipment or liquid crystal display panel of thin film transistor manufacturing equipment, also can be other semiconductor processing equipment.
Among the present invention, the front end of thermocouple extend in the groove, and thermocouple can contact support plate closely, and measured temperature is exactly the temperature of support plate, and error is less; Thermocouple is hidden among the groove, can avoid being heated fluorescent tube and disturb, and thermometric is accurate.In technical process, because support plate 1 can stop a few minutes at the heating location of heating chamber, therefore the reaction speed of enough thermocouples 3 does not need to worry the programming rate of thermocouple 3 thermometrics.
The above; only for the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, and anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.
Claims (10)
1. a heated chamber comprises the support plate that can vertically move in heated chamber, it is characterized in that, the groove that connects before and after the side of described support plate is provided with, and the sidewall of this heated chamber is provided with thermocouple, and the front end of described thermocouple extend in the described groove.
2. heated chamber according to claim 1 is characterized in that, the front end shape of the inner wall shape of described groove and described thermocouple matches.
3. heated chamber according to claim 2 is characterized in that described thermocouple is connected with elastic device, and described elastic device compresses described thermocouple and described groove.
4. heated chamber according to claim 3 is characterized in that described elastic device comprises spring or cylinder.
5. according to each described heated chamber of claim 1 to 4, it is characterized in that described groove is located at the one-sided or bilateral of described support plate.
6. according to each described heated chamber of claim 1 to 4, it is characterized in that, be provided with infrared ray heating tube in this heated chamber, be provided with shadow shield between described thermocouple and the infrared ray heating tube.
7. heated chamber according to claim 6 is characterized in that, described infrared ray heating tube is located at the top and/or the below of described support plate.
8. according to each described heated chamber of claim 1 to 4, it is characterized in that the front end of described thermocouple is provided with coat of metal.
9. a semiconductor processing equipment is characterized in that, this semiconductor processing equipment comprises each described heated chamber of claim 1 to 8.
10. semiconductor processing equipment according to claim 9 is characterized in that, this semiconductor processing equipment comprises following at least a equipment:
Plasma enhanced chemical vapor deposition equipment, manufacture of solar cells equipment, semiconductor chip manufacturing equipment, liquid crystal display panel of thin film transistor manufacturing equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910081053XA CN101853774B (en) | 2009-03-31 | 2009-03-31 | Heating cavity and semiconductor processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910081053XA CN101853774B (en) | 2009-03-31 | 2009-03-31 | Heating cavity and semiconductor processing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101853774A true CN101853774A (en) | 2010-10-06 |
| CN101853774B CN101853774B (en) | 2012-06-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910081053XA Active CN101853774B (en) | 2009-03-31 | 2009-03-31 | Heating cavity and semiconductor processing device |
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| CN (1) | CN101853774B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103811393A (en) * | 2012-11-07 | 2014-05-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Electrostatic chuck for carrying wafer and plasma processing equipment |
| CN104078400A (en) * | 2014-06-25 | 2014-10-01 | 合肥鑫晟光电科技有限公司 | Bearing device and ion implantation device |
| CN106206377A (en) * | 2016-07-22 | 2016-12-07 | 京东方科技集团股份有限公司 | A kind of etching device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4099511B2 (en) * | 2004-07-23 | 2008-06-11 | 株式会社アイ・ピー・ビー | Temperature measurement method for stage and silicon wafer substrate |
| JP4803596B2 (en) * | 2006-09-06 | 2011-10-26 | 東京エレクトロン株式会社 | Temperature measuring device |
| KR20090012710A (en) * | 2007-07-31 | 2009-02-04 | 피에스케이 주식회사 | Apparatus for treating substrates |
| JP4905290B2 (en) * | 2007-08-09 | 2012-03-28 | 住友電気工業株式会社 | Temperature measuring device for semiconductor manufacturing apparatus and semiconductor manufacturing apparatus equipped with the same |
-
2009
- 2009-03-31 CN CN200910081053XA patent/CN101853774B/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103811393A (en) * | 2012-11-07 | 2014-05-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Electrostatic chuck for carrying wafer and plasma processing equipment |
| CN103811393B (en) * | 2012-11-07 | 2016-12-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Electrostatic chuck and plasma processing device for bearing wafer |
| CN104078400A (en) * | 2014-06-25 | 2014-10-01 | 合肥鑫晟光电科技有限公司 | Bearing device and ion implantation device |
| CN106206377A (en) * | 2016-07-22 | 2016-12-07 | 京东方科技集团股份有限公司 | A kind of etching device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101853774B (en) | 2012-06-06 |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016, building 2, block M5, No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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