CN101906620A - Heating chamber and plasma reinforced chemical vapor deposition device - Google Patents
Heating chamber and plasma reinforced chemical vapor deposition device Download PDFInfo
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- CN101906620A CN101906620A CN2009100858929A CN200910085892A CN101906620A CN 101906620 A CN101906620 A CN 101906620A CN 2009100858929 A CN2009100858929 A CN 2009100858929A CN 200910085892 A CN200910085892 A CN 200910085892A CN 101906620 A CN101906620 A CN 101906620A
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- temperature deformation
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Abstract
The invention discloses a heating chamber and a plasma reinforced chemical vapor deposition device which comprises a carrier plate carrying a substrate, wherein the lower part of the carrier plate is fixed with a temperature deformation component, and the side surface under the carrier plate corresponding to the temperature deformation component is provided with a measuring grating. The temperature deformation component can generate different deformations along with the temperature change of the carrier plate, and the deformation of the temperature deformation component is captured through the change of the light quantity of the grating, thereby measuring the temperature of the carrier plate. The invention can enhance the temperature measurement precision; and as for the condition of overhigh temperature, the invention can be used for measuring the region temperature which thermocouples can not bear. The invention can be used for PECVD systems or any other system of which the inside of the chamber adopts infrared heating in upper and lower layers, and has the advantage of small measuring error.
Description
Technical field
The present invention relates to a kind of plasma reinforced chemical vapor deposition system, relate in particular to a kind of heated chamber and plasma enhanced chemical vapor deposition unit.
Background technology
As shown in Figure 1, in the prior art, PECVD (plasma enhanced chemical vapor deposition) system comprises: loading platform, loading chamber and warm-up block, processing chamber, unloading chamber and refrigerating module, offload platform.In the PECVD system, substrate is loaded onto on the support plate in the loading platform zone, enter warm-up block via the loading chamber and carry out thermal pretreatment, after substrate reaches the technological temperature requirement, be transferred into technical module and carry out pecvd process, spread out of total system by the unloading chamber at last.
The function of load chamber mainly is preliminary vacuum and heat effect, and there is heating module inside, and substrate is heated, and makes the temperature of substrate reach the required temperature of technology in the short period of time.For the temperature that makes substrate is maintained, need heat and reach identical temperature in the lump to the support plate of carrying substrates.
As shown in Figure 2, in the prior art, the support plate 1 of carrying substrates is adopted the mode of infrared lamp 2 heating, because the speed of Infrared Heating is very fast.For the speed that improves heating and the support plate homogeneity of temperature up and down, adopt the mode of double-deck Infrared Heating up and down usually.
Because support plate 1 is the load chamber that is moved into from loading stage, after finishing, heating moves to process cavity again, and promptly support plate 1 is not fixed on load chamber, and the device of supports loadboard 1 is exactly the roller that transmits usefulness, not a stage apparatus.This has brought a difficult problem just for thermometric work, and the common mode of immersioning thermocouple is just infeasible.
As shown in Figure 3, a kind of temp measuring method of the prior art is that thermopair 3 is insinuated near the support plate 1, measures the temperature around the support plate 1.
There is following shortcoming at least in above-mentioned prior art:
Because what measure is not the temperature of support plate 1 itself, temperature on every side and support plate 1 have error; Thermopair 3 is shone directly into by infrared lamp 2 in addition, also can disturb measuring to produce, and influences measuring result.
Summary of the invention
The purpose of this invention is to provide less heated chamber of a kind of error and plasma enhanced chemical vapor deposition unit.
The objective of the invention is to be achieved through the following technical solutions:
Heated chamber of the present invention comprises the support plate that loads substrate, and the bottom of described support plate is fixed with the temperature deformation device, and the lower side face of described support plate is provided with the measurement grating corresponding to the position of described temperature deformation device.
Plasma enhanced chemical vapor deposition unit of the present invention, this device comprises above-mentioned heated chamber.
As seen from the above technical solution provided by the invention, heated chamber of the present invention and plasma enhanced chemical vapor deposition unit, because the bottom of support plate is fixed with the temperature deformation device, the lower side face of support plate is provided with the measurement grating corresponding to the position of temperature deformation device.The temperature deformation device can produce different distortion with the temperature variation of support plate, measures the temperature of grating by the deformation measurement support plate of measurement temperature deformation device; Because the temperature deformation device is fixed on the support plate, can directly measure the temperature of support plate self, error is less.
Description of drawings
Fig. 1 is the side structure synoptic diagram of PECVD system in the prior art;
Fig. 2 is the structural representation of the mode of upper and lower double-deck Infrared Heating in the prior art;
Fig. 3 is for being insinuated into thermopair in the prior art near measure the support plate surrounding temperature support plate synoptic diagram;
Fig. 4 is for loading the structural representation of chamber perpendicular to the cross section of carrier plate transmission direction among the present invention;
Fig. 5 is for loading the plan structure synoptic diagram of chamber among the present invention.
Embodiment
Heated chamber of the present invention, the embodiment that it is preferable such as Fig. 4, shown in Figure 5 comprise the support plate 1 that loads substrate, and the bottom of support plate 1 is fixed with temperature deformation device 4, and the lower side face of support plate 1 is provided with the measurement grating corresponding to the position of temperature deformation device 4.
The tabular device that temperature deformation device 4 can lump together for the plate stack of two-layer differing materials; Also can be the single-layer plate-like temperature sensor.Can select for use and of the prior artly various the more sensitive material of temperature be made temperature sensor, as copper aluminium etc.Can make tabular, strip etc.
Measure grating and can comprise grating emtting electrode 5 and grating receiving pole 6, be located at the both sides of support plate 1 respectively.When heating, along with the rising and the decline of temperature, the length of temperature deformation device 4 can be along with increasing or reducing.
Temperature deformation device 4 is installed on the path of grating, shelters from part light.The light intensity that receives according to grating receiving pole 6, length variations that just can accounting temperature deformable means 4.By experiment, temperature deformation device 4 temperature variant length variations can be obtained, thereby the temperature of temperature deformation device 4 can be obtained.And temperature deformation device 4 is close to support plate 1, and then this temperature is the temperature of support plate.
Measure grating and also can be the transmitting-receiving grating, light harvesting grid emtting electrode 5 and grating receiving pole 6 are located at a side of support plate 1 in one.At this moment, the light of temperature deformation device 4 reflected backs is received by the grating receiving pole, can calculate the temperature of temperature deformation device 4 according to the light intensity of reflected back.
Plasma enhanced chemical vapor deposition unit of the present invention, its preferable embodiment is that this device comprises above-mentioned heated chamber.
Among the present invention, temperature sensor is installed on support plate, device can produce deformation along with the change of temperature, and device deformation is caught by the light quantity change of grating.
Can improve temperature measurement accuracy; For condition of overhigh temperature, can the unaffordable regional temperature of calorimetric galvanic couple.Can be used for PECVD or other and need adopt the system of two-layer Infrared Heating up and down in chamber, these systems can be applicable to the manufacture of solar cells field, also can be used for fields such as semi-conductor chip manufacturing, the manufacturing of TFT panel simultaneously.
The above; only for the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, and anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.
Claims (6)
1. a heated chamber comprises the support plate that loads substrate, it is characterized in that, the bottom of described support plate is fixed with the temperature deformation device, and the lower side face of described support plate is provided with the measurement grating corresponding to the position of described temperature deformation device.
2. heated chamber according to claim 1 is characterized in that, described measurement grating comprises grating emtting electrode and grating receiving pole, is located at the both sides of described support plate respectively.
3. heated chamber according to claim 1 is characterized in that, described measurement grating is the transmitting-receiving grating, is located at a side of described support plate.
4. heated chamber according to claim 1 is characterized in that, the tabular or strip device that the plate stack that described temperature deformation device is two-layer differing materials lumps together.
5. heated chamber according to claim 1 is characterized in that, described temperature deformation device is single-layer plate-like or strip temperature sensor.
6. a plasma enhanced chemical vapor deposition unit is characterized in that, this device comprises each described heated chamber of claim 1 to 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100858929A CN101906620A (en) | 2009-06-03 | 2009-06-03 | Heating chamber and plasma reinforced chemical vapor deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100858929A CN101906620A (en) | 2009-06-03 | 2009-06-03 | Heating chamber and plasma reinforced chemical vapor deposition device |
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| CN101906620A true CN101906620A (en) | 2010-12-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN2009100858929A Pending CN101906620A (en) | 2009-06-03 | 2009-06-03 | Heating chamber and plasma reinforced chemical vapor deposition device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105624638A (en) * | 2014-11-21 | 2016-06-01 | 汉民科技股份有限公司 | Control system and method for temperature of chemical vapor deposition wafer and film |
| CN108588684A (en) * | 2018-05-23 | 2018-09-28 | 深圳市捷佳伟创新能源装备股份有限公司 | Increase the PECVD reacting furnaces and its control method of heat source in a kind of stove newly |
-
2009
- 2009-06-03 CN CN2009100858929A patent/CN101906620A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105624638A (en) * | 2014-11-21 | 2016-06-01 | 汉民科技股份有限公司 | Control system and method for temperature of chemical vapor deposition wafer and film |
| CN105624638B (en) * | 2014-11-21 | 2018-12-18 | 汉民科技股份有限公司 | Control system and method for temperature of chemical vapor deposition wafer and film |
| CN108588684A (en) * | 2018-05-23 | 2018-09-28 | 深圳市捷佳伟创新能源装备股份有限公司 | Increase the PECVD reacting furnaces and its control method of heat source in a kind of stove newly |
| WO2019223355A1 (en) * | 2018-05-23 | 2019-11-28 | 深圳市捷佳伟创新能源装备股份有限公司 | Pecvd reaction furnace having additional heat source therein and control method therefor |
| CN108588684B (en) * | 2018-05-23 | 2020-06-16 | 深圳市捷佳伟创新能源装备股份有限公司 | PECVD (plasma enhanced chemical vapor deposition) reaction furnace with newly added heat source in furnace and control method thereof |
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Application publication date: 20101208 |