CN107843616A - The apparatus and method of the thermal conductivity of quick measurement thin-film material - Google Patents
The apparatus and method of the thermal conductivity of quick measurement thin-film material Download PDFInfo
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- CN107843616A CN107843616A CN201711130271.9A CN201711130271A CN107843616A CN 107843616 A CN107843616 A CN 107843616A CN 201711130271 A CN201711130271 A CN 201711130271A CN 107843616 A CN107843616 A CN 107843616A
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- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N25/00—Investigating or analyzing materials by the use of thermal means
- G01N25/20—Investigating or analyzing materials by the use of thermal means by investigating the development of heat, i.e. calorimetry, e.g. by measuring specific heat, by measuring thermal conductivity
Abstract
The invention discloses a kind of apparatus and method of the thermal conductivity of quick measurement thin-film material, specifically, the device includes control device, clock synchronizer, laser, fast thermodetector and thermal conductivity output equipment；Control device is connected with clock synchronizer signal, and clock synchronizer is connected with laser and fast thermodetector signal simultaneously；In the operating condition, control device sends enabling signal to clock synchronizer, laser and fast thermodetector coordination linkage, laser sends laser and is irradiated to sample surfaces, at the same time, fast thermodetector catches different time points, the surface temperature of the sample of same specified location in sample heating process, the data input thermal conductivity output equipment that will be measured, obtain required thermal conductivity parameter.The apparatus structure of the present invention is simple, method efficiently and accurately, can provide reliable supplemental characteristic for the setting of the current various hot physical property of ultra-thin semiconductor film.
Description
Technical Field
The invention relates to the field of thermal measurement, in particular to a device and a method for rapidly measuring the thermal conductivity of a thin film material.
Background
Thin film thermal conductivity measurement techniques have evolved into a variety of techniques. Some researchers determine the thermal conductivity of the thin film by measuring the electrical conductivity of the metal thin film and then utilizing the Wiedemann-Franz law, but the method is not applicable when the thickness of the thin film is very thin and only applicable to the metal thin film. Film thermal conductivity can also be measured using the microbridge method, but requires that the film be in a substrate-free state, which necessarily requires that the thickness of the film material not be too thin, otherwise microbridge bridging of the film cannot be achieved. The method for measuring the thermal conductivity by the double thermocouple method designed by Goldsmid needs to deposit double thermocouples on the surface of a deposited sample, and the deposited double thermocouples can cause pollution to the components of the sample. Hatta et al, which is called a periodic heat flow method, irradiates a thin film to be measured having a thickness d with periodic laser light as a heating source, and determines the thermal conductivity of the thin film according to the wavelength of a thermal wave in the thin film. The reflectivity of the femtosecond laser pumping detection metal material surface changes along with the change of the surface temperature, and when the temperature change is small, the reflectivity is in direct proportion to the temperature change. Accordingly, the temperature change of the surface area can be determined by measuring the change of the reflectivity of the surface of the material, and then the thermophysical property is obtained.
Although deposition techniques for industrial thin films have been widely used, there are still a number of difficulties in measuring the thermal conductivity of thin films deposited onto a substrate surface. There is a lack in the art of a new apparatus and method for measuring thermal conductivity of thin film materials.
Disclosure of Invention
The invention aims to provide a device and a method for rapidly measuring the thermal conductivity of a thin film material.
In a first aspect of the present invention, an apparatus for rapidly measuring the thermal conductivity of a thin film material is provided, specifically, the apparatus comprises a control device, a clock synchronizer, a laser, a rapid temperature measuring instrument, and a thermal conductivity output device; the control equipment is in signal connection with the clock synchronizer, and the clock synchronizer is in signal connection with the laser and the rapid temperature measuring instrument simultaneously; in a working state, the control device sends a starting signal to the clock synchronizer, the laser and the rapid temperature measuring instrument are coordinated and linked, the laser emits laser to irradiate the surface of a sample, meanwhile, the rapid temperature measuring instrument captures the surface temperature of the sample at different time points and the same specified position in the sample heating process, and measured data are input into the thermal conductivity output device to obtain the required thermal conductivity parameter.
In another preferred example, the rapid temperature detector is in signal connection with the thermal conductivity output device, and the thermal conductivity output device automatically reads data measured by the rapid temperature detector.
In another preferred embodiment, the rapid thermodetector is in signal connection with the thermal conductivity output device, and the rapid thermodetector directly sends measured data to the thermal capacity output device.
In another preferred example, the data measured by the rapid thermometer is manually input to the thermal conductivity output device by an operator.
In another preferred example, the thermal conductivity output device includes a display for displaying the thermal conductivity value.
In another preferred example, the control device is a computer.
In another preferred example, the thermal conductivity output device is a computer.
In another preferred example, the control device and the thermal conductivity output device are the same computer.
In another preferred example, the rapid temperature measuring instrument is a wire detection rapid temperature measuring instrument.
In another preferred example, the thermal conductivity output device has a storage means for storing the data measured by the rapid thermometer and the thermal conductivity value.
In another preferred example, the thermal conductivity output device outputs the stored data in the form of an electronic form for easy viewing and summarization by an operator.
In another preferred example, the sample comprises a film and a substrate, the film covers the surface of the substrate, and the laser irradiates the film.
In another preferred example, the work flow of the thermal conductivity output device is as follows:
a) Based on the data measured by the rapid thermometer, the surface temperature values of a group of samples at different time points and at the same designated position in the heating process are obtainedWherein i is the ith time point and is not less than 1;
b) Assuming a corresponding point in time τ i And a surface temperature value of the sample is calculated by the following heat conduction equation
Wherein λ is the thermal conductivity of the film, ρ is the density of the film, c is the specific heat capacity of the film, the heat flux density of the E laser, and the value of the region E outside the light spot is zero;
c) ComparisonAndand determine whether or not
d) If it isEstablishment and preservation ofCorresponding heat conductivity, and calculating the next time point;
e) If it isIf not, re-assuming the corresponding time point τ i Repeating steps b) and c) untilIs established, save theCorresponding heat conductivity, and calculating the next time point;
f) And when all the i time points are calculated, performing root mean square averaging on all the calculated thermal conductivities to finally obtain the average thermal conductivity of the film.
In a second aspect of the present invention, there is provided a method for rapidly measuring thermal conductivity of a thin film material, specifically, the method comprising:
a) Providing the device according to claim 6, rapidly heating the sample by using a laser, and measuring the surface temperature of the sample at different time points and the same designated position in the heating process by using a rapid thermometer;
b) Based on the data measured by the rapid thermometer, the surface temperature values of a group of samples at different time points and at the same designated position in the heating process are obtainedWherein i is the ith time point and is not less than 1;
c) Assuming a corresponding point in time τ i And a surface temperature value of the sample is calculated by the following heat conduction equation
Wherein λ is the thermal conductivity of the film, ρ is the density of the film, c is the specific heat capacity of the film, the heat flux density of the E laser, and the value of the region E outside the light spot is zero;
d) ComparisonAndand determine whether or not
e) If it isIs established and savedCorresponding heat conductivity, and calculating the next time point;
f) If it isIf not, re-assuming the corresponding time point τ i Repeating steps b) and c) untilIs established, save theCorresponding heat conductivity, and calculating the next time point;
g) And when all the i time points are calculated, carrying out root mean square averaging on all the calculated thermal conductivities to finally obtain the average thermal conductivity of the film.
In another preferred example, the method is based on the fact that the heat conduction process of the laser heating film conforms to the law of Fourier heat conduction, and the heating process of the laser in the circular area is simplified into a one-dimensional heat conduction process under a cylindrical coordinate system.
In another preferred embodiment, the method is to obtain the thermal conductivity of the film by solving the heat conduction equation reversely.
It is to be understood that within the scope of the present invention, the above-described features of the present invention and those specifically described below (e.g., in the examples) may be combined with each other to form new or preferred embodiments. Not to be reiterated herein, but to the extent of space.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the prior art descriptions will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a diagram of a laser heating pattern in one embodiment of the present invention.
Fig. 2 is a graph of the energy spatial distribution of a spot produced by a laser applied to the surface of a thin film in accordance with one embodiment of the present invention.
FIG. 3 is a spatial distribution plot of temperature in one example of the invention.
Fig. 4 is a temperature profile for different heating times in one example of the invention.
Fig. 5 is a schematic diagram of the structure of an apparatus in one example of the invention.
FIG. 6 is a graph comparing thermal conductivity of films of different materials in an example of the invention.
Fig. 7 is a temperature distribution diagram of the spot edge of the film of material H in fig. 6 when heated for 10ns.
Fig. 8 is a flowchart of the operation of the thermal conductivity output device in one example of the present invention.
In the drawings, each symbol is as follows:
101-a control computer;
102-a clock synchronizer;
103-a laser;
104-line detection rapid thermometer;
105-sample.
Detailed Description
The invention has been accomplished on the basis of the fact that the invention utilizes the laser instantaneous heating technology and combines the rapid temperature measurement technology to calculate the thermal conductivity of the thin film material.
The invention provides a novel device and a novel method for rapidly measuring the thermal conductivity of a thin film material.
Typically, the device for rapidly measuring the thermal conductivity of the thin film material triggers the clock synchronizer through the computer control system, the clock synchronizer simultaneously triggers the laser and the temperature acquisition system, the laser emitted by the laser heats the surface of the material, the temperature change of the temperature of the edge of a light spot is measured, and then the acquired temperature data is calculated to obtain the thermal conductivity of the thin film material.
The method for rapidly measuring the thermal conductivity of the film material utilizes a laser rapid heating and high-speed temperature measuring system to rapidly obtain the temperatures of the designated positions on the surface of the film material at different times, and carries out inverse operation solution on a heat conduction equation and calculates the thermal conductivity of the film material.
The thickness of the film is generally tens of nanometers to several micrometers, the thickness of the substrate is in millimeter level, and the difference between the film and the substrate in geometry can reach more than 2 orders of magnitude. Therefore, the substrate is approximate to a semi-infinite model, and the thermal response process of the film in the laser heating process is not changed.
As shown in fig. 1, the laser irradiation of the thin film material mainly includes physical processes such as absorption, temperature rise, and heat conduction.
(I) Heating the film after absorbing the incident laser:
according to the laser heating principle, the absorption of the laser by the thin film material meets the following formula:
ΔI a (x)≈(1-R)I·δe -δx (1)
wherein Δ I a (x) The absorption power of the film in unit thickness at the depth of x from the surface of the film is shown, I is the power of the laser reaching the surface of the material, R is the reflectivity of the film system, and δ is the absorption coefficient of the film system. All parts of the film are coated with a coating of Delta I a (x) The power is heated to raise the temperature. When the substrate coefficient is negligible (e.g., low coefficient or thicker film), the total heat Q absorbed by the film a (τ) satisfies the formula:
where d is the film thickness and τ is the heating time.
(II) Heat conduction:
the finite element is utilized to simulate the change behavior of the temperature along the solid line path in fig. 2 under the same heating time and the same heating temperature of three materials with different thermal conductivities, so that the temperature change rule shown in fig. 3 can be obtained, and the thermal conductivities A > B > C of the three materials are realized. It can be seen from fig. 3 that the larger the thermal conductivity of the material, the larger the temperature-to-space gradient change, so the temperature-to-space gradient behavior is a thermal conductivity that can characterize the material.
FIG. 4 is a graph showing the temperature distribution of the surface of a material at different times (τ is 1000ns, τ is 500ns, and τ is 100 ns) during laser heating using finite element modeling. Although the surface temperature of the material is constant, the temperature at a given reference location (e.g., the location of 17um in fig. 4) gradually decreases with time. The temperature of a given reference point at a given time corresponds one-to-one to the thermal conductivity of the material, and when the temperatures T1 to TN are measured at N time points in succession, N thermal conductivities λ 1 to λ N (each fluctuating within a deviation range) will in principle correspond. The temperature in the heat conduction equation is also one-to-one corresponding to the thermal conductivity.
However, during laser heating and film heating, heat conduction to the film areas that are not directly heated, and to the substrate, is unavoidable. During the process of heating the thin film material by the laser, since the temperature in the light spot is higher than that outside the light spot, the energy in the light spot is transferred outwards, such as the heat propagation of Q in fig. 1. Due to the different thermal conductivities of different materials, the gradient of the temperature distribution caused by the radial propagation of heat in the light spot is different, and as the behavior of the temperature change in the overlooking state of the light spot shown in fig. 2, the temperature gradually decreases from the center of the light spot to the edge, as shown by the path shown by the solid line in fig. 2.
The heat conduction process of the laser heating film material conforms to the heat conduction law of Fourier, a round area is arranged on a laser heating light spot, so that heat can be spread to the periphery, due to the absolute symmetry of the round area, the two-dimensional heat conduction behavior of the laser on the surface of the material can be simplified, the one-dimensional heat conduction along the path direction in the figure 2 can be realized, and the one-dimensional heat conduction process under a cylindrical coordinate system can be understood by the circular temperature diffusion to the periphery:
wherein λ is the thermal conductivity of the material, ρ is the density of the material, c is the specific heat capacity of the material, E is the heat flux density of the laser, and the value of the region E outside the spot is zero.
The temperature field T (r, τ) at any location and at any time can be determined using finite difference techniques or finite element techniques, given the boundary conditions (convection, radiation, heat conduction) and the initial conditions (temperature, heat source).
Using a rapid temperature measurement system to measure the position of M point (M point) in FIG. 2Is a point on the edge of the light spot) is measured quickly (as shown in fig. 7, the temperature distribution of the edge of the light spot when a certain material is heated for 10ns, it can be seen that the temperature of the material begins to change at the edge of the light spot, a temperature gradient is generated, and therefore the point on the edge of the light spot is selected to measure the temperature and obtain the thermal conductivity), and a group of temperature values related to time are obtainedPerforming finite difference dispersion on equation (3), and calculating the temperature value at the M point on the surface of the film at the time point tau i given an assumed thermal conductivityAnd measuring the temperature valueComparing, if not meeting the tolerance range of the temperatureUpdating the numerical value of the assumed thermal conductivity, recalculating and repeating the steps; and when the temperature of the calculated value reaches the tolerance range, saving the current value of the inversely calculated thermal conductivity, and calculating the next time point. When all the measurement points are calculated, root mean square averaging is performed on the heat conductivity of the inversion calculation, and the solving flow chart is shown in fig. 8.
The main advantages of the invention include:
(a) The device has simple structure;
(b) The method is efficient and accurate, and the error between the thermal conductivity value output by the device and the actual thermal conductivity value is within 5 percent;
(c) Provides reliable parameter data for the setting of the thermophysical property of various current ultrathin semiconductor films.
The invention will be further illustrated with reference to the following specific examples. It should be understood that these examples are for illustrative purposes only and are not intended to limit the scope of the present invention. Furthermore, the drawings are schematic and therefore the apparatus and device of the present invention is not limited by the size or scale of the schematic.
It is to be noted that in the claims and the description of the present patent, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, the use of the verb "comprise a" to define an element does not exclude the presence of another, same element in a process, method, article, or apparatus that comprises the element.
In addition, the parameters of heating temperature and action time are only used as illustration examples, and the laser spot size, heating temperature and action time are not limited to the parameters specified in the patent.
Examples
The device for rapidly measuring the thermal conductivity of the thin film material in the embodiment is shown in fig. 5, and fig. 5 shows the measurement process of the thermal conductivity of the thin film material, and a control computer 101 is used for sending a start signal to a clock synchronizer 102, so that the laser 103 and a line detection rapid temperature measuring instrument 104 are ensured to be coordinated and linked, and the laser emitted by the laser 103 irradiates the surface of a sample 105. The linescope 104 captures a series of surface temperatures at specified locations at different time points during the heating of the sample 105 and stores them. The calculation software automatically reads in the stored data, obtains a series of inversion calculation results according to the sequence of the test data, and finally obtains the final calculation result.
A beam of light with uniform spatial intensity and light intensity of 3.0e 17 W/m 2 The laser of (2) heats the surface of the sample for a time of10ns. And in the position 1um away from the edge of the light spot, temperature measurement data acquisition is carried out on the heating process. As shown in fig. 6, the data representation of the dots is the true value of the material, and the data representation of the squares is the calculated value obtained by inverting the temperature measurement data. As can be seen from the calculation results shown in fig. 6, the average thermal conductivity in a certain temperature interval that can be solved by the inverse operation of the heat transfer temperature can be explained. The error between the standard thermal conductivity value and the thermal conductivity value output by the device is within 5 percent, which shows that the device for rapidly measuring the thermal conductivity of the thin film material has higher accuracy.
All documents referred to herein are incorporated by reference into this application as if each were individually incorporated by reference. Furthermore, it should be understood that various changes and modifications of the present invention can be made by those skilled in the art after reading the above teachings of the present invention, and these equivalents also fall within the scope of the present invention as defined by the appended claims.
Claims (10)
1. A device for rapidly measuring the thermal conductivity of a thin film material is characterized by comprising control equipment, a clock synchronizer, a laser, a rapid temperature measuring instrument and thermal conductivity output equipment;
the control equipment is in signal connection with the clock synchronizer, and the clock synchronizer is in signal connection with the laser and the rapid temperature measuring instrument simultaneously;
in a working state, the control device sends a starting signal to the clock synchronizer, the laser and the rapid temperature measuring instrument are coordinated and linked, the laser emits laser to irradiate the surface of a sample, meanwhile, the rapid temperature measuring instrument captures the surface temperature of the sample at different time points and the same specified position in the sample heating process, and measured data are input into the thermal conductivity output device to obtain the required thermal conductivity parameter.
2. The apparatus of claim 1, wherein the rapid thermometer is in signal communication with the thermal conductivity output device, the thermal conductivity output device automatically reading data measured by the rapid thermometer.
3. The apparatus of claim 1, wherein the thermal conductivity output device comprises a display for displaying the thermal conductivity value.
4. The apparatus of claim 1, wherein the control device and the thermal conductivity output device are the same computer.
5. The apparatus of claim 1, wherein the rapid temperature detector is a line-detect rapid temperature detector.
6. The apparatus of claim 1, wherein the sample comprises a film and a substrate, the film is coated on a surface of the substrate, and the laser is irradiated onto the film.
7. The apparatus of claim 1, wherein the thermal conductivity output device has a workflow of:
a) Obtaining a set of surface temperature values T (tau) of the sample at different time points and at the same designated position in the heating process based on the data measured by the rapid thermometer i ) Wherein i is the ith time point and is not less than 1 and not more than i;
b) Assuming a corresponding point in time τ i And a surface temperature value theta (tau) of the sample is calculated by the following heat conduction equation i )：
Wherein λ is the thermal conductivity of the film, ρ is the density of the film, c is the specific heat capacity of the film, the heat flux density of the E laser, and the value of the region E outside the light spot is zero;
c) Comparison of T (τ) i ) And θ (τ) i ) And determines whether | T (τ) i )-θ(τ i )|＜2；
d) If | T (τ) i )-θ(τ i ) If | is < 2, θ (τ) is preserved i ) Corresponding heat conductivity, and calculating the next time point;
e) If | T (τ) i )-θ(τ i ) If | < 2 is not true, the corresponding time point tau is assumed again i Repeating steps b) and c) until | T (τ) i )-θ(τ i ) If | < 2, the θ (τ) is saved i ) Corresponding thermal conductivity, and calculating the next time point;
f) And when all the i time points are calculated, carrying out root mean square averaging on all the calculated thermal conductivities to finally obtain the average thermal conductivity of the film.
8. A method for rapidly measuring thermal conductivity of a thin film material, the method comprising:
a) Providing the device according to claim 6, rapidly heating the sample by using a laser, and measuring the surface temperature of the sample at different time points and the same designated position in the heating process by using a rapid thermometer;
b) Based on the data measured by the rapid thermodetector, obtaining the surface temperature T (tau) of a group of samples at different time points and at the same designated position in the heating process i ) Wherein i is the ith time point and is not less than 1 and not more than i;
c) Assuming a corresponding point in time τ i And a surface temperature value theta (tau) of the sample is calculated by the following heat conduction equation i )：
Wherein λ is the thermal conductivity of the film, ρ is the density of the film, c is the specific heat capacity of the film, the heat flux density of the E laser, and the value of the region E outside the light spot is zero;
d) Comparison of T (τ) i ) And θ (τ) i ) And determines whether | T (τ) i )-θ(τ i )|＜2；
e) If | T (τ) i )-θ(τ i ) If | < 2, save θ (τ) i ) Corresponding heat conductivity, and calculating the next time point;
f) If | T (τ) i )-θ(τ i ) If | < 2 is not true, the corresponding time point tau is assumed again i Repeating steps b) and c) until | T (τ) i )-θ(τ i ) If | < 2, the θ (τ) is saved i ) Corresponding heat conductivity, and calculating the next time point;
g) And when all the i time points are calculated, carrying out root mean square averaging on all the calculated thermal conductivities to finally obtain the average thermal conductivity of the film.
9. The method of claim 8, wherein the thermal conduction process of the laser heating the thin film is in accordance with the fourier thermal conduction law, and the heating process of the laser in the circular area is simplified to a one-dimensional thermal conduction process in a cylindrical coordinate system.
10. The method of claim 8, wherein the thermal conductivity of the film is obtained by solving a heat conduction equation in reverse.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107941850A (en) * | 2017-11-21 | 2018-04-20 | 宁波英飞迈材料科技有限公司 | A kind of apparatus and method of quick measurement thin-film material thermal capacitance |
| CN111024754A (en) * | 2019-12-29 | 2020-04-17 | 北京工业大学 | Method for measuring thermal conductivity of thin film material |
| CN112268927A (en) * | 2020-11-05 | 2021-01-26 | 南京大学 | Measuring method and calculating method for thermal conductivity of soft substance film material |
| CN114041050A (en) * | 2019-06-20 | 2022-02-11 | 耐驰日本株式会社 | Thermal property value measuring device and thermal property value measuring method |
| CN114295667A (en) * | 2021-11-29 | 2022-04-08 | 北京理工大学 | Method for rapidly measuring thermal conductivity of micro-nano film |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008241519A (en) * | 2007-03-28 | 2008-10-09 | Beteru:Kk | Device and method for measuring thermophysical property, and recording medium |
| CN102279204A (en) * | 2010-06-09 | 2011-12-14 | 中国科学院工程热物理研究所 | Detection method for thermal conductivity and thermal diffusivity of anisotropic material |
| CN102393370A (en) * | 2011-11-08 | 2012-03-28 | 中国科学院上海光学精密机械研究所 | Measuring device and measuring method for film photo-thermal property |
| CN104833695A (en) * | 2015-05-14 | 2015-08-12 | 电子科技大学 | Infrared thermal imaging technology-based method for measuring heat conductivity of sheet metal based on |
| CN104880436A (en) * | 2015-04-30 | 2015-09-02 | 华侨大学 | Film high-temperature photoelectric physical property testing device |
| CN107102026A (en) * | 2017-05-23 | 2017-08-29 | 中国科学院上海高等研究院 | A kind of thermal conductivity of thin film measuring method based on micro-nano fluorescent grain |
-
2017
- 2017-11-15 CN CN201711130271.9A patent/CN107843616B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008241519A (en) * | 2007-03-28 | 2008-10-09 | Beteru:Kk | Device and method for measuring thermophysical property, and recording medium |
| CN102279204A (en) * | 2010-06-09 | 2011-12-14 | 中国科学院工程热物理研究所 | Detection method for thermal conductivity and thermal diffusivity of anisotropic material |
| CN102393370A (en) * | 2011-11-08 | 2012-03-28 | 中国科学院上海光学精密机械研究所 | Measuring device and measuring method for film photo-thermal property |
| CN104880436A (en) * | 2015-04-30 | 2015-09-02 | 华侨大学 | Film high-temperature photoelectric physical property testing device |
| CN104833695A (en) * | 2015-05-14 | 2015-08-12 | 电子科技大学 | Infrared thermal imaging technology-based method for measuring heat conductivity of sheet metal based on |
| CN107102026A (en) * | 2017-05-23 | 2017-08-29 | 中国科学院上海高等研究院 | A kind of thermal conductivity of thin film measuring method based on micro-nano fluorescent grain |
Non-Patent Citations (4)
| Title |
|---|
| MIKKO RUOHO ET AL: "Measurement of thin film thermal conductivity using the laser flash method", 《NANOTECHNOLOGY》 * |
| 张武康等: "薄膜热导率测量方法研究进展", 《功能材料》 * |
| 张琳等: "激光导热仪准确测量比热容的方法研究", 《真空电子技术》 * |
| 蔡岸: "薄膜材料热物性及其测试新装置的研究", 《中国博士学位论文全文数据库 工程科技Ⅰ辑》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107941850A (en) * | 2017-11-21 | 2018-04-20 | 宁波英飞迈材料科技有限公司 | A kind of apparatus and method of quick measurement thin-film material thermal capacitance |
| CN107941850B (en) * | 2017-11-21 | 2020-08-04 | 宁波英飞迈材料科技有限公司 | Device and method for rapidly measuring heat capacity of thin film material |
| CN114041050A (en) * | 2019-06-20 | 2022-02-11 | 耐驰日本株式会社 | Thermal property value measuring device and thermal property value measuring method |
| CN111024754A (en) * | 2019-12-29 | 2020-04-17 | 北京工业大学 | Method for measuring thermal conductivity of thin film material |
| CN112268927A (en) * | 2020-11-05 | 2021-01-26 | 南京大学 | Measuring method and calculating method for thermal conductivity of soft substance film material |
| CN114295667A (en) * | 2021-11-29 | 2022-04-08 | 北京理工大学 | Method for rapidly measuring thermal conductivity of micro-nano film |
| CN114295667B (en) * | 2021-11-29 | 2024-01-05 | 北京理工大学 | Method for rapidly measuring thermal conductivity of micro-nano film |
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