CN103811393A - Electrostatic chuck for carrying wafer and plasma processing equipment - Google Patents
Electrostatic chuck for carrying wafer and plasma processing equipment Download PDFInfo
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- CN103811393A CN103811393A CN201210439837.7A CN201210439837A CN103811393A CN 103811393 A CN103811393 A CN 103811393A CN 201210439837 A CN201210439837 A CN 201210439837A CN 103811393 A CN103811393 A CN 103811393A
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- heat transfer
- transfer gas
- thermocouple
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- hole
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Abstract
The invention provides an electrostatic chuck for carrying a wafer and plasma processing equipment. The electrostatic chuck for carrying a wafer comprises a chuck body for carrying a wafer; a thermal conductivity gas through hole passing through along the thickness direction is arranged inside the chuck body; thermal conductivity gas reaches the gap between the wafer and the chuck body via the thermal conductivity gas through hole; the thermal conductivity gas through hole is internally provided with a thermocouple for measuring the temperature of the wafer; and the measuring end of the thermocouple and the wafer are contacted via the way that pressure of the thermal conductivity gas in the thermal conductivity gas through hole applies an upward force on the measuring end of the thermocouple. According to the electrostatic chuck provided by the invention, the temperature of the wafer can be directly measured in the normal technological process, the structure is simple, processing is easy and the manufacturing cost is low.
Description
Technical field
The present invention relates to microelectronic processing technique field, particularly, relate to a kind of electrostatic chuck for bearing wafer and plasma processing device.
Background technology
In the technical process of manufacturing integration circuit (IC) and MEMS (micro electro mechanical system) (MEMS), particularly implementing in the technical process of plasma etching (ETCH), physical vapour deposition (PVD) (PVD), chemical vapour deposition (CVD) (CVD) etc., often use that electrostatic chuck fixes, the workpiece to be machined such as support and heated chip.
Fig. 1 is the structural representation of existing plasma processing device.As shown in Figure 1, plasma processing device comprises reaction chamber 10, in reaction chamber 10, is provided with electrostatic chuck.Electrostatic chuck comprises the chuck body 11 for bearing wafer 15, and chuck body 11 adopts AL
2o
3or the ceramic material such as ALN is made.In chuck body 11, be provided with DC electrode layer 12, DC electrode layer 12 is connected with DC power supply (not shown), in the time that DC power supply provides electric energy to DC electrode layer 12, between DC electrode layer 12 and wafer 15, produce electrostatic attraction, thereby wafer 15 is fixed on to the upper surface of chuck body 11.And, in chuck body 11, be provided with the heat transfer gas through hole running through along its thickness direction, and be serially connected with the heat transfer gas feed tube 13 being communicated with it in the lower end of this heat transfer gas through hole.The other end with respect to heat transfer gas through hole of heat transfer gas feed tube 13 is connected with thermally conductive gas body source, the heat transfer gas such as the helium being provided by thermally conductive gas body source arrive in the gap between wafer 15 and chuck body 11 by heat transfer gas feed tube 13 and heat transfer gas through hole successively, in order to increase the exchange heat between chuck body 11 and wafer 15, thereby the temperature of wafer 15 is regulated effectively.
In addition, be also provided with thermocouple 14 in chuck body 11, its measuring junction is arranged on the inside of chuck body 11, in order to detect the temperature of chuck body 11, thereby indirectly obtains the temperature of wafer 15.But, in actual applications, between chuck body 11 and wafer 15, often there is the temperature difference, the chip temperature that causes thermocouple 14 to detect is inaccurate, thereby technique is had to certain harmful effect.Therefore, how directly contacting realization by thermocouple and wafer is the problem that those skilled in the art face to the accurate measurement of chip temperature.Summary of the invention
The present invention is intended at least solve one of technical problem existing in prior art, has proposed a kind of electrostatic chuck for bearing wafer and plasma processing device, its can be in normal process process the temperature of direct-detection wafer.
Provide a kind of electrostatic chuck for bearing wafer for realizing object of the present invention, comprise the chuck body for bearing wafer, in described chuck body, be provided with the heat transfer gas through hole running through along described chuck body thickness direction, heat transfer gas arrives in the gap between described wafer and described chuck body by described heat transfer gas through hole; And, in described heat transfer gas through hole, be provided with the thermocouple for measuring described chip temperature, and the measuring junction of described thermocouple is that the active force that the pressure in described heat transfer gas through hole applies upwards to the measuring junction of described thermocouple by described heat transfer gas is realized with contacting of described wafer.
Wherein, measuring junction at described thermocouple is provided with shoulder, the external diameter of described shoulder is less than the internal diameter of described heat transfer gas through hole, and, in described heat transfer gas through hole, be provided with support component, described support component is arranged on described thermocouple in described heat transfer gas through hole by described shoulder.
Wherein, the gap between described shoulder and the inwall of described heat transfer gas through hole is 0.05～0.1mm.
Wherein, described support component is spring, and described spring housing is located at the outside of described thermocouple, and the internal diameter of described spring is less than the external diameter of described shoulder.
Wherein, described heat transfer gas comprises helium.
As another technical scheme, the present invention also provides a kind of plasma processing device, it comprises reaction chamber and heat transfer gas pipeline, in described reaction chamber, be provided with electrostatic chuck, wherein, described electrostatic chuck has adopted above-mentioned electrostatic chuck provided by the invention, and described heat transfer gas pipeline is for carrying heat transfer gas to described electrostatic chuck.
Wherein, also comprise thermostat unit and temperature control unit, described temperature control unit is for according to thermostat unit described in the real time temperature value control of the wafer of described thermocouple acquisition, the temperature of wafer being regulated, so that the temperature of wafer reaches technique initialization temperature.
Wherein, described thermostat unit comprises the resistance wire and/or the coolant channel that are arranged in described chuck body.
Wherein, the cooling agent passing in described coolant channel comprises water or cooling liquid.
Wherein, described temperature control unit receives the real time temperature value being obtained by described thermocouple, and judge whether described real time temperature value exceeds default chip temperature threshold value, if described real time temperature value exceeds default described chip temperature threshold value, increase the flow of described cooling agent and/or reduce the temperature of described cooling agent.
Wherein, described heat transfer gas pipeline comprises the first connectivity port, the second connectivity port and the 3rd connectivity port, and wherein, described the first connectivity port is communicated with described heat transfer gas through hole; Described the second connectivity port is communicated with described thermally conductive gas body source as the input port of heat transfer gas; Described the 3rd connectivity port as the line outlet of described thermocouple so that the wiring of described thermocouple be connected with terminal by described the 3rd connectivity port.
The present invention has following beneficial effect:
Electrostatic chuck for bearing wafer provided by the invention, it is provided with the thermocouple for measuring chip temperature in heat transfer gas through hole, and contacting between the measuring junction of thermocouple and wafer is that the active force that the measuring junction of the pressure thermoelectric couple in heat transfer gas through hole by heat transfer gas applies is upwards realized.That is to say, in the time not passing into heat transfer gas in heat transfer gas through hole, the measuring junction of thermocouple is higher than the upper surface of chuck body, thus make wafer can with the upper surface good contact of chuck body; In the time passing into heat transfer gas in heat transfer gas through hole, the measuring junction of thermocouple is subject to the active force that heat transfer gas applies and moves up, so that it contacts with wafer, thus temperature that can direct-detection wafer.And, because thermocouple is arranged in heat transfer gas through hole,, only need utilize the existing structure of electrostatic chuck just can make thermocouple directly contact with wafer without separately establishing the through hole that can pass through for thermocouple, this not only can simplify the structure of electrostatic chuck, and can reduce the difficulty of processing of electrostatic chuck.
The present invention also provides a kind of plasma processing device, it has adopted above-mentioned electrostatic chuck provided by the invention, not only can be in normal process process the real time temperature value of direct-detection wafer, and by this real time temperature value is fed back to temperature control unit, can make temperature control unit regulate the temperature of wafer according to this real time temperature value, thereby can regulate more accurately the temperature of wafer, and then improve processing quality.
Accompanying drawing explanation
Fig. 1 is the structural representation of the plasma processing device of prior art;
The structural representation of the electrostatic chuck for bearing wafer that Fig. 2 provides for first embodiment of the invention;
The structural representation of the electrostatic chuck for bearing wafer that Fig. 3 provides for second embodiment of the invention; And
Fig. 4 is the structural representation of the seal nipple of plasma processing device provided by the invention.
Embodiment
For making those skilled in the art understand better technical scheme of the present invention, below in conjunction with accompanying drawing, the electrostatic chuck for bearing wafer provided by the invention and plasma processing device are described in detail.
The structural representation of the electrostatic chuck for bearing wafer that Fig. 2 provides for first embodiment of the invention.Refer to Fig. 2, electrostatic chuck comprises the chuck body 30 for bearing wafer 32, in chuck body 30, be provided with the heat transfer gas through hole 31 running through along its thickness direction, heat transfer gas arrives in the gap between wafer 32 and chuck body 30 by heat transfer gas through hole 31, in order to increase the exchange heat between chuck body 30 and wafer 32, thereby the temperature of wafer 32 is regulated effectively.Heat transfer gas comprises that helium etc. has the gas of thermal conductive resin.
In heat transfer gas through hole 31, be provided with the thermocouple of the temperature for measuring wafer 32, it comprises measuring junction 33, measuring junction 33 is arranged in heat transfer gas through hole 31, and in the time not passing into heat transfer gas in heat transfer gas through hole 31, measuring junction 33 is not higher than the upper surface of chuck body 30, thereby can make the lower surface of wafer 32 and the upper surface good contact of chuck body 30, avoid causing wafer 32 even cannot contact with the upper surface loose contact of chuck body 30 because of the measuring junction 33 of thermocouple higher than the upper surface of chuck body 30, thereby affect the problem of processing quality.In the time passing into heat transfer gas in heat transfer gas through hole 31, heat transfer gas can apply active force upwards to measuring junction 33 at interior the produced air pressure of heat transfer gas through hole 31, thereby measuring junction 33 is moved up, so that measuring junction 33 contacts with wafer 32, thereby make the temperature that measuring junction 33 can direct-detection wafer 32.
The electrostatic chuck for bearing wafer that the present embodiment provides is compared with the another kind of electrostatic chuck that thermocouple is fixed therein, in the present embodiment, electrostatic chuck is that thermocouple is arranged in heat transfer gas through hole, , only need utilize the existing structure of electrostatic chuck and need in chuck body 30, not process specially a through hole thermocouple is installed, do not need to adopt brazing mode that the clearance seal between this through hole and thermocouple is fixed yet, this brazing mode refers to first metallizing layer on the hole wall of through hole, then the gap-fill solder between through hole and thermocouple, finally implement soldering processes, cause electrostatic chuck complex structure, processing difficulties.In addition, soldering processes need at high temperature carry out, and this just has very high requirement to the resistance to elevated temperatures of thermocouple, and then have increased the manufacturing cost of electrostatic chuck.Therefore, the electrostatic chuck for bearing wafer that the present embodiment provides is not only simple in structure, and difficulty of processing is lower, thereby can reduce the manufacturing cost of electrostatic chuck.
The structural representation of the electrostatic chuck that Fig. 3 provides for second embodiment of the invention.Refer to Fig. 3, the electrostatic chuck that the present embodiment provides, compared with the first embodiment, comprises chuck body 30 equally.Because chuck body 30 has had and described in detail in the technique scheme of the first embodiment, do not repeat them here.Only the difference between the technical scheme to the present embodiment and the technique scheme of the first embodiment is described below.
Particularly, the measuring junction 33 of thermocouple also comprises shoulder 331, in the present embodiment, shoulder 331 adopts cylindrical structure, and the external diameter of shoulder 331 is less than the internal diameter of heat transfer gas through hole 31, in other words, between the periphery wall of shoulder 331 and the inwall of heat transfer gas through hole 31, there is gap.In the time passing into heat transfer gas in heat transfer gas through hole 31, heat transfer gas can arrive in the gap between the lower surface of wafer 32 and the upper surface of chuck body 30, to increase the exchange heat between chuck body 30 and wafer 32 by this gap.In addition, the size of the active force upwards measuring junction 33 being applied due to size and the heat transfer gas in above-mentioned gap has certain corresponding relation, that is: in the case of the flow of heat transfer gas and pressure constant, gap is larger, and the active force upwards that heat transfer gas applies measuring junction 33 is less; On the contrary, gap is less, and the active force upwards that heat transfer gas applies measuring junction 33 is larger.Therefore, in order to guarantee that heat transfer gas can apply suitable upwards active force to measuring junction 33, contact with chuck body 30 well so that measuring junction 33 guarantees wafer 32 under the prerequisite contacting with wafer 32, can in the process of manufacturing electrostatic chuck, adopt the mode of experiment to adjust and determine the size in above-mentioned gap.The size in above-mentioned gap is preferably 0.05～0.1mm.
And, in heat transfer gas through hole 31, be provided with support component, in order to supporting hot galvanic couple.Particularly, support component is arranged on the measuring junction of thermocouple 33 in heat transfer gas through hole 31 by shoulder 331, and in the time not passing into heat transfer gas in heat transfer gas through hole 31, and the measuring junction 33 that makes thermocouple is not higher than the upper surface of chuck body 30.In the present embodiment, support component is spring 37, spring 37 is sheathed on the outside of thermocouple and is positioned at the bottom of shoulder 331, and the internal diameter of spring 37 is less than the external diameter of shoulder 331, so that spring 37 can be arranged on measuring junction 33 in heat transfer gas through hole 31 by shoulder 331, and in the time not passing into heat transfer gas in heat transfer gas through hole 31, the measuring junction 33 that makes thermocouple is not higher than the upper surface of chuck body 30.In actual applications, can select as the case may be the specification of spring 37, as long as spring 37 is being subject to the gravity of measuring junction 33, after producing compression, the measuring junction 33 that can make thermocouple is not higher than the upper surface of chuck body 30.
In addition, spring 37 can be fixedly connected with thermocouple, for example, one end of spring 37 can be fixedly connected with shoulder 331, or arrange separably (with thermocouple, in heat transfer gas through hole 31, pass into heat transfer gas, and in the process that moves up of measuring junction 33, spring 37 can be separated from each other with measuring junction 33); And/or the other end of spring 37 is fixedly connected with heat transfer gas through hole 31, or arrange separably, for example, can on the inwall of heat transfer gas through hole 31, flange be set, and the internal diameter of this flange is less than the external diameter of spring 37, in order to support spring 37.
It should be noted that, although in the present embodiment, shoulder 331 adopts cylindrical structure, but the present invention is not limited thereto, in actual applications, shoulder 331 can adopt arbitrary structures, as long as can coordinate with support component, the measuring junction of thermocouple 33 is arranged in heat transfer gas through hole 31.
In sum, the electrostatic chuck for bearing wafer that the present embodiment provides, it is provided with the thermocouple for measuring chip temperature in heat transfer gas through hole, and the measuring junction of thermocouple and the measuring junction that contacts the pressure thermoelectric couple in heat transfer gas through hole by heat transfer gas between wafer apply, and active force upwards realizes.That is to say, in the time not passing into heat transfer gas in heat transfer gas through hole, the measuring junction of thermocouple is higher than the upper surface of chuck body, thus make wafer can with the upper surface good contact of chuck body; In the time passing into heat transfer gas in heat transfer gas through hole, the measuring junction of thermocouple is subject to the active force that heat transfer gas applies and moves up, so that it contacts with wafer, thus temperature that can direct-detection wafer.And, because thermocouple is arranged in heat transfer gas through hole,, only need utilize the existing structure of electrostatic chuck just can make thermocouple directly contact with wafer without separately establishing the through hole that can pass through for thermocouple, this has not only simplified the structure of electrostatic chuck, and has reduced the difficulty of processing of electrostatic chuck.In addition,, because thermocouple and heat transfer gas through hole are fixing without carrying out soldering processes sealing, this has not only further reduced the difficulty of processing of electrostatic chuck, and has expanded the range of choice of thermocouple, thereby has reduced the manufacturing cost of electrostatic chuck.
As another technical scheme, the present invention also provides a kind of plasma processing device, and it comprises reaction chamber, in this reaction chamber, is provided with electrostatic chuck, the above-mentioned electrostatic chuck that this electrostatic chuck has adopted the present embodiment to provide.
In the present embodiment, plasma processing device also comprises thermostat unit and temperature control unit.Wherein, thermostat unit comprises the resistance wire and/or the coolant channel that are arranged in chuck body.Wherein, resistance wire is under the control of temperature control unit, chuck body being heated, thereby indirect is placed in the wafer in chuck body.In the process of carrying out in technique, temperature control unit can receive the real time temperature value being obtained by thermocouple, and judge (whether this real time temperature value exceed default chip temperature value, the chip temperature of setting while carrying out technique), if real time temperature value exceeds default chip temperature value, improve or reduce the modes such as the power output of resistance wire by employing and regulate the temperature of wafer.Or, the real time temperature value of the wafer that temperature control unit can also obtain according to received thermocouple is calculated the output power value that obtains resistance wire accordingly, and according to the power output of this output power value regulating resistance silk, can realize the temperature of wafer is regulated.
Coolant channel is cooling for chuck body being carried out under the control of temperature control unit,, reduces the temperature of chuck body by pass into cooling agent in coolant channel that is, thereby indirectly reduces the temperature that is placed in the wafer in chuck body.Cooling agent comprises water or cooling liquid, and cooling liquid can be Galden liquid etc.In the process of carrying out in technique, temperature control unit receives the real time temperature value being obtained by thermocouple, and judge whether this real time temperature value exceeds default chip temperature value, if real time temperature value exceeds default chip temperature value, can increase the temperature of flow and/or the reduction cooling agent of cooling agent.
In the present embodiment, be also serially connected with heat transfer gas feed tube 35 in the lower end of heat transfer gas through hole 31.As shown in Figure 3, heat transfer gas feed tube 35 comprises three connectivity ports, is respectively the first connectivity port 351, the second connectivity port 352 and the 3rd connectivity port 353.Wherein, the first connectivity port 351 is communicated with heat transfer gas through hole 31; The second connectivity port 352 is communicated with thermally conductive gas body source as the input port of heat transfer gas, in order to enter heat transfer gas feed tube 35 for the heat transfer gas of heat transfer gas source output; The 3rd connectivity port 353, as the line outlet of thermocouple, is used so that the wiring 332 of thermocouple is connected with corresponding terminal by this line outlet.It should be noted that, the length of the wiring 332 of thermocouple should meet in the time that the measuring junction 33 of thermocouple moves up and can contact with the lower surface of wafer 32, the length that is to say the wiring 332 of thermocouple should be able to meet thermocouple by low level (measuring junction 33 of thermocouple is lower than the position of the upper surface of chuck body 30) to high-order (position that the measuring junction 33 of thermocouple contacts with the lower surface of wafer 32) the path of process.In the present embodiment, the 3rd connectivity port 353 is for being arranged on the through hole on the tube wall of heat transfer gas feed tube 35, and, in this through hole, be also provided with seal 36, in order to the gap between the wiring of through hole and thermocouple 332 is sealed.
In actual applications, input port that can also be using the 3rd connectivity port 353 as heat transfer gas, and line outlet using the second connectivity port 352 as thermocouple.In this case, should be in the second connectivity port 352 interior above-mentioned seal 36 be set, in order to the gap between the second connectivity port 352 and the wiring 332 of thermocouple is sealed.
In addition, sealing means between the line outlet of thermocouple and the wiring of thermocouple 332 not only comprises the sealing means that adopts seal 36 that the gap between the wiring of line outlet and thermocouple 332 is sealed, also comprise following two kinds of sealing means, that is: the first sealing means can adopt the mode of welding that the gap between the wiring of line outlet and thermocouple 332 is sealed; The second sealing means can adopt the mode of seal nipple that the gap between the wiring of line outlet and thermocouple 332 is sealed.
In the time adopting the second sealing means, as shown in Figure 4, be the structural representation of the seal nipple of plasma processing device provided by the invention.Seal nipple comprises thermocouple seal nipple and heat transfer gas seal nipple.Wherein, thermocouple seal nipple seals for the gap between line outlet and the wiring 332 of thermocouple to thermocouple, and it comprises the first joint 43 and plug 44.When the 3rd connectivity port 353 is as the input port of heat transfer gas, and the second connectivity port 352 is during as the line outlet of thermocouple, and one end of the first joint 43 and the second connectivity port 352 are tightly connected, and the other end of the first joint 43 and plug 44 are tightly connected; In plug 44, be provided with through hole, use so that the wiring 332 of thermocouple is connected with corresponding terminal by this through hole, and wiring 332 can adopt the mode of welding to be tightly connected with through hole.
Heat transfer gas seal nipple seals for the gap between input port and thermally conductive gas body source to heat transfer gas, and it comprises the second joint 41 and three-way connection 42.Wherein, one end of three-way connection 42 and the 3rd connectivity port 353 are tightly connected, and one end of the other end of three-way connection 42 and the second joint 41 is tightly connected; The other end of the second joint 41 is communicated with thermally conductive gas body source.
Easily understand, if the second connectivity port 352 is as the input port of heat transfer gas, and the 3rd connectivity port 353 during as the line outlet of thermocouple, only need be by the location swap of thermocouple seal nipple and heat transfer gas seal nipple, can realize the gap between the line outlet to thermocouple and the wiring 332 of thermocouple respectively, and gap between the input port of heat transfer gas and thermally conductive gas body source seals.
The above-mentioned plasma processing device that the present embodiment provides, it is by the electrostatic chuck that adopts the present embodiment to provide, not only can be in normal process process the real time temperature value of direct-detection wafer, and by this real time temperature value is fed back to temperature control unit, can make temperature control unit regulate the temperature of wafer according to this real time temperature value, thereby can regulate more accurately the temperature of wafer, and then improve processing quality.
Be understandable that, above execution mode is only used to principle of the present invention is described and the illustrative embodiments that adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (11)
1. the electrostatic chuck for bearing wafer, comprise the chuck body for bearing wafer, in described chuck body, be provided with the heat transfer gas through hole running through along described chuck body thickness direction, heat transfer gas arrives in the gap between described wafer and described chuck body by described heat transfer gas through hole;
It is characterized in that, in described heat transfer gas through hole, be provided with the thermocouple for measuring described chip temperature, and the measuring junction of described thermocouple is that the active force that the pressure in described heat transfer gas through hole applies upwards to the measuring junction of described thermocouple by described heat transfer gas is realized with contacting of described wafer.
2. electrostatic chuck according to claim 1, it is characterized in that, measuring junction at described thermocouple is provided with shoulder, the external diameter of described shoulder is less than the internal diameter of described heat transfer gas through hole, and, in described heat transfer gas through hole, be provided with support component, described support component is arranged on described thermocouple in described heat transfer gas through hole by described shoulder.
3. electrostatic chuck according to claim 2, is characterized in that, the gap between described shoulder and the inwall of described heat transfer gas through hole is 0.05～0.1mm.
4. electrostatic chuck according to claim 2, is characterized in that, described support component is spring, and described spring housing is located at the outside of described thermocouple, and the internal diameter of described spring is less than the external diameter of described shoulder.
5. electrostatic chuck according to claim 1, is characterized in that, described heat transfer gas comprises helium.
6. a plasma processing device, it comprises reaction chamber and heat transfer gas pipeline, in described reaction chamber, be provided with electrostatic chuck, it is characterized in that, described electrostatic chuck adopts the electrostatic chuck described in claim 1-5 any one claim, and described heat transfer gas pipeline is for carrying heat transfer gas to described electrostatic chuck.
7. plasma processing device according to claim 6, is characterized in that, also comprises thermostat unit and temperature control unit,
Described temperature control unit is for according to thermostat unit described in the real time temperature value control of the wafer of described thermocouple acquisition, the temperature of wafer being regulated, so that the temperature of wafer reaches technique initialization temperature.
8. plasma processing device according to claim 7, is characterized in that, described thermostat unit comprises the resistance wire and/or the coolant channel that are arranged in described chuck body.
9. plasma processing device according to claim 8, is characterized in that, the cooling agent passing in described coolant channel comprises water or cooling liquid.
10. plasma processing device according to claim 9, it is characterized in that, described temperature control unit receives the real time temperature value being obtained by described thermocouple, and judge whether described real time temperature value exceeds default chip temperature threshold value, if described real time temperature value exceeds default described chip temperature threshold value, increase the flow of described cooling agent and/or reduce the temperature of described cooling agent.
11. plasma processing devices according to claim 6, it is characterized in that, described heat transfer gas pipeline comprises the first connectivity port, the second connectivity port and the 3rd connectivity port, and wherein, described the first connectivity port is communicated with described heat transfer gas through hole; Described the second connectivity port is communicated with described thermally conductive gas body source as the input port of heat transfer gas; Described the 3rd connectivity port as the line outlet of described thermocouple so that the wiring of described thermocouple be connected with terminal by described the 3rd connectivity port.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210439837.7A CN103811393B (en) | 2012-11-07 | 2012-11-07 | Electrostatic chuck and plasma processing device for bearing wafer |
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| CN201210439837.7A CN103811393B (en) | 2012-11-07 | 2012-11-07 | Electrostatic chuck and plasma processing device for bearing wafer |
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| CN103811393A true CN103811393A (en) | 2014-05-21 |
| CN103811393B CN103811393B (en) | 2016-12-07 |
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| CN105702610A (en) * | 2014-11-26 | 2016-06-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Wafer carrying device |
| CN106328475A (en) * | 2016-10-24 | 2017-01-11 | 上海华力微电子有限公司 | Plasma etching equipment |
| TWI772146B (en) * | 2020-08-25 | 2022-07-21 | 大陸商北京北方華創微電子裝備有限公司 | Semiconductor reaction chamber and semiconductor processing device |
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| CN102453886A (en) * | 2010-10-15 | 2012-05-16 | 东京毅力科创株式会社 | Film forming method, film forming apparatus, and method for manufacturing a semiconductor device |
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Address after: 100176 No. 8 Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |