CN112864079B - Electrostatic chuck and semiconductor processing equipment - Google Patents
Electrostatic chuck and semiconductor processing equipment Download PDFInfo
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- CN112864079B CN112864079B CN202110096674.6A CN202110096674A CN112864079B CN 112864079 B CN112864079 B CN 112864079B CN 202110096674 A CN202110096674 A CN 202110096674A CN 112864079 B CN112864079 B CN 112864079B
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- 238000012545 processing Methods 0.000 title claims abstract description 20
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims description 17
- 239000000853 adhesive Substances 0.000 claims description 10
- 230000001070 adhesive effect Effects 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 230000001105 regulatory effect Effects 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 3
- 230000001276 controlling effect Effects 0.000 claims description 3
- 239000004519 grease Substances 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- -1 polytetrafluoroethylene Polymers 0.000 claims description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 24
- 230000008569 process Effects 0.000 abstract description 21
- 238000007654 immersion Methods 0.000 description 9
- 238000005468 ion implantation Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
Abstract
The invention provides an electrostatic chuck and semiconductor processing equipment, wherein the electrostatic chuck comprises an insulating layer and a temperature adjusting structure; the insulating layer is internally provided with a direct current electrode for electrostatically adsorbing a processed workpiece arranged on the insulating layer; the temperature adjusting structure comprises an insulating substrate arranged at the bottom of the insulating layer, wherein a heat exchange component which floats to the ground is arranged in the insulating substrate, the heat exchange component comprises a contact surface exposed from the upper surface of the insulating substrate, and the contact surface is contacted with the lower surface of the insulating layer and is used for controlling the temperature of a processed workpiece through heat conduction. The electrostatic chuck and the semiconductor processing equipment provided by the invention can reduce the capacitance to ground of the direct current electrode so as to reduce the power loss on the capacitance to ground and improve the process efficiency.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to an electrostatic chuck and semiconductor processing equipment.
Background
Currently, plasma immersion ion implantation techniques are widely used in the fabrication process of integrated circuits or microelectromechanical systems devices. Specifically, the plasma immersion ion implantation technique is a surface modification technique of implanting accelerated ions in plasma as dopants into a suitable substrate or a target of a semiconductor chip provided with an electrode by applying a high-voltage pulsed direct current or pure direct current power supply. Because the plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules, free radicals and the like, the active particles reach the surface of the wafer under the action of the lower bias voltage and interact with the wafer to cause various physical and chemical reactions on the surface of the material, so that the surface property of the material is changed.
In performing a plasma immersion ion implantation process, the wafer is typically held by an electrostatic chuck. However, in the conventional electrostatic chuck structure, the structure is composed of a dc electrode, a heater and an aluminum substrate which are sequentially arranged, and since the aluminum substrate is grounded through a chamber, the distance between the dc electrode and the aluminum substrate is relatively short, so that the capacitance to ground of the conventional electrostatic chuck is relatively large. However, the plasma immersion ion implantation technology requires that the electrostatic chuck have as small a capacitance to ground as possible, so how to reduce the capacitance to ground of the electrostatic chuck is a problem to be solved in the art.
Disclosure of Invention
The embodiment of the invention aims at solving at least one of the technical problems in the prior art, and provides an electrostatic chuck and a semiconductor processing device, which can reduce the capacitance to ground of a direct current electrode so as to reduce the power loss on the capacitance to ground and improve the process efficiency.
To achieve the object of the present invention, there is provided an electrostatic chuck comprising
An insulating layer and a temperature regulating structure; the insulating layer is internally provided with a direct current electrode for electrostatically adsorbing a processed workpiece arranged on the insulating layer;
the temperature adjusting structure comprises an insulating substrate arranged at the bottom of the insulating layer, a heat exchange component suspended to the ground is arranged in the insulating substrate, the heat exchange component comprises a contact surface exposed from the upper surface of the insulating substrate, and the contact surface is contacted with the lower surface of the insulating layer and used for controlling the temperature of the processed workpiece through heat conduction.
Optionally, a groove is formed on the insulating substrate, and an opening of the groove is positioned on the upper surface of the insulating substrate; the heat exchange member is disposed in the recess, an upper surface of the heat exchange member serving as the contact surface being in contact with a lower surface of the insulating layer;
and a preset gap is arranged between the side surfaces of the heat exchange component and the groove, which are opposite to each other, and the width of the preset gap is larger than the change amount of thermal expansion of the insulating substrate.
Optionally, a compressible adhesive material is filled in the preset gap and between the heat exchange member and the bottom surface of the groove opposite to each other; and the upper surface of the heat exchange member is covered with the compressible adhesive material.
Optionally, the adhesive material comprises silicone grease or polytetrafluoroethylene.
Optionally, the heat exchange component comprises a heat exchange body and a heat exchange channel arranged in the heat exchange body, wherein,
the heat exchange channels are used for exchanging heat with the heat exchange body by conveying a heat exchange medium.
Optionally, the electrostatic chuck further comprises an input conduit, an output conduit, and a temperature control device, wherein,
two ends of the input pipeline are respectively connected with the input end of the heat exchange channel and the output end of the temperature control device;
two ends of the output pipeline are respectively connected with the output end of the heat exchange channel and the input end of the temperature control device;
the temperature control device is used for adjusting the temperature of the heat exchange medium.
Optionally, the input pipeline and the output pipeline are both insulating hoses.
Optionally, the heat exchange channels are evenly distributed with respect to the contact surface.
Optionally, the heat exchange channel comprises a plurality of annular sub-channels, and the plurality of annular sub-channels are distributed on a plurality of circumferences with different radiuses and with the center of the contact surface as the center of the circle; and each two adjacent annular sub-channels are connected in series and communicated through connecting sub-channels arranged at intervals, so that a plurality of annular sub-channels form a continuous channel.
The embodiment of the invention also provides semiconductor processing equipment, which comprises a reaction chamber and an electrostatic chuck arranged in the reaction chamber, and is characterized in that the electrostatic chuck adopts the electrostatic chuck.
The embodiment of the invention has the following beneficial effects:
according to the electrostatic chuck provided by the embodiment of the invention, the heat exchange component is arranged in the insulating matrix in a floating manner to insulate the whole temperature regulating structure from the ground, so that the distance between the direct current electrode arranged above the temperature regulating structure and the ground can be increased, the capacitance to the ground of the electrostatic chuck can be reduced, the power loss on the capacitance to the ground can be reduced, and more power is used in the processing process, so that higher processing efficiency is obtained.
The semiconductor processing equipment provided by the embodiment of the invention adopts the electrostatic chuck provided by the embodiment to fix the processed workpiece, and the electrostatic chuck has smaller capacitance to ground, so that the power loss on the capacitance to ground can be reduced, and more power is used in the processing process, thus the semiconductor processing equipment provided by the embodiment of the invention can obtain higher processing efficiency.
Drawings
Fig. 1 is a schematic structural diagram of an electrostatic chuck according to embodiment 1 of the present invention;
fig. 2 is an equivalent circuit diagram of an electrostatic chuck according to embodiment 1 of the present invention;
fig. 3 is another schematic structural diagram of an electrostatic chuck according to embodiment 1 of the present invention;
FIG. 4 is a partial cross-sectional view of an electrostatic chuck according to embodiment 1 of the present invention;
fig. 5 is a schematic diagram of a heat exchange channel structure according to embodiment 1 of the present invention.
Detailed Description
The present invention is described in detail below, examples of embodiments of the invention are illustrated in the accompanying drawings, wherein the same or similar reference numerals refer to the same or similar components or components having the same or similar functions throughout. Further, if detailed description of the known technology is not necessary for the illustrated features of the present invention, it will be omitted. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the invention.
It will be understood by those skilled in the art that all terms (including technical and scientific terms) used in this example have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs unless defined otherwise. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
In order to better understand the technical scheme of the invention, the electrostatic chuck and the semiconductor processing equipment provided by the embodiment of the invention are described in detail below with reference to the accompanying drawings.
Example 1
Referring to fig. 1, the present embodiment provides an electrostatic chuck for fixing a workpiece to be processed, which includes an insulating layer 1 and a temperature adjusting structure 2. In the insulating layer 1, a dc electrode 11 is provided, which is capable of adsorbing a workpiece to be processed placed on the insulating layer 1 by using an electrostatic adsorption principle, thereby achieving fixation of the workpiece to be processed. When the electrostatic chuck is applied to a plasma immersion ion implantation process, the dc electrode 11 is also supplied with dc pulses for supplying the workpiece with ion-attracting energy. In some embodiments, the insulating layer 1 may be made of an insulating material such as ceramic.
The temperature regulating structure 2 includes an insulating base 21 provided at the bottom of the insulating layer 1 to be insulated from the ground; in some application scenarios, there is a ground line in communication with the ground, and the insulating matrix 21 can also be insulated from the ground by being insulated from the ground line. The insulating base 21 is provided with a heat exchange member 22 suspended to the ground, i.e. the heat exchange member 22 is also insulated from the ground.
According to the basic structure of the capacitor, the capacitor is formed by two conductive plates and an insulator between the two conductive plates, so that after the direct current electrode 11 is electrified, the direct current electrode 11 can be used as one conductive plate, the ground is used as the other conductive plate, and air serving as the insulator exists between the two conductive plates, so that the capacitor is formed, and the capacitor is the capacitance to the ground of the direct current electrode 11. In practical applications, the electrostatic chuck is often used in a process chamber, so that after the dc electrode 11 is energized, it forms a capacitance with the conductive chamber bottom plate, and the chamber bottom plate is usually conducted as a ground line to the ground, and under this condition, the capacitance formed by the dc electrode 11 and the chamber bottom plate can also be regarded as a capacitance to ground of the dc electrode 11. Since the insulating substrate 21 is insulated from the ground, the heat exchange member 22 is also suspended from the ground, and the dc electrode 11 is disposed above the insulating substrate 21 (including the heat exchange member 22), the distance between the dc electrode 11 and the ground or the ground is large, and as the capacitance to ground formula c=εs/d (where C is the capacitance to ground of the electrode, ε is the dielectric constant of the substance between the electrode and the ground, s is the electrode area, and d is the distance between the electrode and the ground or the ground) is known, the larger the distance between the dc electrode 11 and the ground or the ground is, the smaller the capacitance to ground is, so that the smaller capacitance to ground of the dc electrode 11 can be obtained, and thus the capacitance to ground of the electrostatic chuck can be reduced, so that the power lost on the capacitance to ground can be reduced, and more power can be used for the processing.
Taking the plasma immersion ion implantation process of the electrostatic chuck provided by the embodiment as an example, fig. 2 is a working equivalent circuit diagram of the electrostatic chuck under the condition, wherein when the plasma immersion ion implantation process is performed, the plasma can be equivalently a plasma equivalent inductance L and a plasma equivalent capacitance R2; the electrostatic chuck can be equivalently referred to as an electrostatic chuck equivalent capacitance C2, an electrostatic chuck to ground capacitance C1, and an electrostatic chuck to ground equivalent resistance R1. As shown in fig. 2, the plasma equivalent inductance L, the plasma equivalent capacitance R2, and the electrostatic chuck equivalent capacitance C2 may be equivalently referred to as plasma branches, which are used for performing a plasma immersion ion implantation process on a workpiece to be processed; the electrostatic chuck capacitance to ground C1 and the electrostatic chuck equivalent resistance to ground R1 may be equivalent to ground. Since the dc electrode 11 is electrically connected to both the plasma leg and the ground leg, the dc electrode 11 may be positioned in the equivalent circuit as shown in fig. 2 at the intersection a of the plasma leg and the ground leg. Since the dc pulse source is also connected from this intersection a, the dc pulse power is distributed to the plasma leg and the ground leg. In order to increase the process efficiency, the dc pulse power distributed into the plasma leg should be much higher than the dc pulse power distributed into the ground leg.
Since the insulating base 21 is insulated from the ground, the heat exchange member floats from the ground, and the capacitance to the ground of the dc electrode 11 corresponds to the capacitance to the ground of the electrostatic chuck. Since the process chamber is grounded, the distance from the dc electrode 11 to the chamber is the distance from the dc electrode 11 to the ground, and thus, by using the insulating substrate 21 and the ground floating geothermal exchange element 22, the capacitance to ground of the dc electrode 11, that is, the capacitance to ground of the electrostatic chuck, can be reduced. According to the capacitance reactance calculation formula: 1/ωc1 (where ω is the frequency of the dc pulse power), it is known that the smaller the capacitance to ground C1 of the electrostatic chuck, the larger the capacitive reactance on the corresponding ground leg, the smaller the current in the ground leg, and the smaller the dc pulse power lost on the ground leg, so that more dc pulse power is loaded into the plasma leg, and thus more dc pulse power is used in the process of the workpiece to be processed, and the process efficiency is improved. In some embodiments, the insulating base 21 may be made of an insulating material such as ceramic.
The above only uses the plasma immersion ion implantation process as an example to analyze the relationship between the capacitance to ground and the process efficiency, and the embodiment is not limited thereto, and in practical application, the electrostatic chuck may be applied to other processes, such as a physical vapor deposition process.
The heat exchange member 22 suspended to the ground includes a contact surface 221 exposed from the upper surface of the insulating base 21, the contact surface 221 being in contact with the lower surface of the insulating layer 1 for controlling the temperature of the workpiece to be processed by heat conduction. Since the insulating material used for the insulating base 21 has a poor heat conductive property relative to materials such as metal, and the insulating base 21 is easily broken by directly introducing deionized water into the insulating base 21, the heat exchange efficiency can be improved and the insulating base 21 can be prevented from being broken by providing the heat exchange member 22 in the insulating base 21. And the heat exchange member 22 itself floats to ground without causing a decrease in the equivalent distance of the flow electrode 11 to ground.
In particular, the heat exchange member 22 may be made of a metal material. Since the metal material generally has good heat conductive property, the heat exchange member 22 can rapidly exchange heat with the insulating layer 1, thereby obtaining a good heat exchange effect.
In some embodiments, the insulating layer 1 and the insulating base 21 may be bonded by an adhesive having thermal conductivity to fix the two.
In some embodiments, as shown in fig. 3, a groove 211 is provided on the insulating base 21, and an opening of the groove 211 is located on an upper surface of the insulating base 21. The heat exchange member 22 is disposed in the recess 211 with its upper surface exposed from the opening of the recess 211 to serve as a contact surface 221 in contact with the lower surface of the insulating layer 1. In practice, the dimensions of the grooves 211 should be designed according to the dimensions of the heat exchange element 22 and the insulating layer 1. Specifically, the opening size of the groove 211 should be smaller than the bottom area size of the insulating layer 1 so that the contact surface 221 is completely covered, thereby preventing the heat exchange member 22 from being exposed to the process chamber, for example, the diameter of the insulating layer 1 is 295mm, and correspondingly, the opening diameter of the groove 211 may be 282mm to 285mm.
And, the heat exchange member 22 and the groove 211 have a predetermined gap between opposite sides thereof, that is, the inner circumferential surface of the groove 211 has a larger size than the outer circumferential surface of the heat exchange member 22, and since the insulating base 21 expands after being heated, the inner circumferential surface of the groove 211 is reduced in size, and thus the width of the predetermined gap is larger than the amount of dimensional change of the inner circumferential surface of the groove 211 when the insulating base 21 expands when heated, thereby preventing the heat exchange member 22 and the insulating base 21 from being crushed to be damaged. In practical applications, the preset gap should be selected according to the expansion amount of the insulating substrate 21 after being heated, for example, the thickness of the heat exchange member 22 is 10mm to 15mm, the outer circumferential surface of the heat exchange member 22 is circular, and the diameter is 280mm, and correspondingly, the inner volume of the groove 211 should be slightly larger than the heat exchange member 22, for example, the depth of the groove 211 is 12mm to 17mm, the inner circumferential surface of the groove 211 is circular, and the diameter is 282mm to 285mm.
In some embodiments, as shown in fig. 4, the heat exchange member 22 may be entirely covered with the compressible adhesive material 224, that is, the compressible adhesive material 224 may be filled in the preset gap and between the heat exchange member 22 and the bottom surface of the groove 211 opposite to each other, and the contact surface 221 of the heat exchange member 22 may be covered with the compressible adhesive material 224, so that not only the heat exchange member 22 may be fixed in the groove 211, but also the adhesive material 224 may be compressed, and may be adapted to deform when the insulating base 21 expands after being heated, and further, the adhesive material 224 covering the contact surface 221 may fill the small pits on the contact surface 221, so that the heat exchange member 22 may be in sufficient contact with the insulating layer 1, thereby obtaining a good heat conducting effect. In some embodiments, the bonding material 224 comprises a material having good thermal conductivity, such as silicone grease or polytetrafluoroethylene, to enhance the thermal conductivity of the heat exchange member 22.
In some embodiments, the heat exchange member 22 includes a heat exchange body 222 and heat exchange channels 223 disposed in the heat exchange body 222. Wherein the heat exchange passage 223 is used for heat exchange with the heat exchange body 222 by feeding a heat exchange medium to adjust the overall temperature of the heat exchange member 22, thereby adjusting the temperature of the insulating layer 1. In some embodiments, the heat exchange medium may be deionized water, which has good insulation to prevent the heat exchange member 22 from conducting through the heat exchange medium to ground or a conductor closer to ground, thereby ensuring that the capacitance to ground of the electrostatic chuck is small. However, the present embodiment is not limited thereto, and in actual production, the heat exchange medium may be a fluid material having both good insulation and heat transfer properties.
In some embodiments, the heat exchanging channels 223 are uniformly distributed with respect to the contact surface 221 to uniformly heat the insulating layer 1, so that the temperature uniformity of the workpiece to be processed can be improved.
In some embodiments, as shown in fig. 5, the heat exchange channel 223 includes a plurality of annular sub-channels 2231 and a plurality of connecting sub-channels 2232, wherein the plurality of arc-shaped sub-channels 2231 are equally spaced on a plurality of circumferences with different radii around the center of the contact surface 221, and each two adjacent annular sub-channels 2231 are serially connected and communicated through the connecting sub-channels 2232 arranged at intervals, so that the plurality of annular sub-channels 2231 form a continuous channel. Specifically, the heat exchange medium can flow in from the input end 2233 of the heat exchange passage 223, and flow in the aforementioned continuous passage and flow out from the output end 2234 of the heat exchange passage 223, so that the heat exchange medium can sufficiently exchange heat in the heat exchange passage 223. However, the present embodiment is not limited thereto, and the heat exchanging channels 223 may be provided according to actual production needs so that they can be uniformly distributed and the flow paths of the heat exchanging medium are long enough to uniformly and sufficiently heat the insulating layer 1.
In some embodiments, the electrostatic chuck further comprises an input conduit 31, an output conduit 32, and a temperature control device 3. Wherein, two ends of the input pipeline 31 are respectively connected with an input end 2233 of the heat exchange channel 223 and an output end of the temperature control device 3; both ends of the output pipeline 32 are respectively connected with an output end 2234 of the heat exchange channel 223 and an input end of the temperature control device 3; the temperature control device 3 is used for adjusting the temperature of the heat exchange medium, so that the heat exchange medium can be adjusted to a preset temperature after heat exchange, and then flows into the heat exchange channel 223, thereby adjusting the overall temperature of the heat exchange component 22.
In some embodiments, the input pipe 31 and the output pipe 32 are both insulating hoses to prevent the heat exchange component 22 from conducting with the ground or a conductor closer to the ground through the pipes, thereby achieving a ground levitation effect and ensuring that the capacitance to ground of the electrostatic chuck is small.
In some embodiments, if the workpiece is to be heated only, uniformly distributed resistance wires may also be provided in the heat exchange body 222 to raise the overall temperature of the heat exchange member 22, thereby heating the workpiece.
According to the electrostatic chuck provided by the embodiment, the heat exchange component suspending to the ground is arranged in the insulating substrate to insulate the whole temperature adjusting structure to the ground, so that the distance between the direct current electrode arranged above the temperature adjusting structure and the ground can be increased, the capacitance to the ground of the electrostatic chuck can be reduced, the power loss on the capacitance to the ground can be reduced, more power is used in the machining process, and higher machining efficiency is obtained.
Example 2
The embodiment provides a semiconductor processing apparatus, which includes a reaction chamber and an electrostatic chuck disposed in the reaction chamber. The electrostatic chuck described in embodiment 1 is used for fixing a workpiece to be processed.
According to the semiconductor processing equipment provided by the embodiment, the workpiece to be processed is fixed by adopting the electrostatic chuck provided by the embodiment, so that the capacitance to ground can be as small as possible, and further the power loss on the capacitance to ground can be reduced, so that more power is used in the processing process, and higher processing efficiency is obtained.
It is to be understood that the above embodiments are merely illustrative of the application of the principles of the present invention, but not in limitation thereof. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the invention, and are also considered to be within the scope of the invention.
Claims (10)
1. An electrostatic chuck, comprising an insulating layer and a temperature regulating structure; the insulating layer is internally provided with a direct current electrode for electrostatically adsorbing a processed workpiece arranged on the insulating layer;
the temperature adjusting structure comprises an insulating substrate arranged at the bottom of the insulating layer, wherein a heat exchange component which floats to the ground is arranged in the insulating substrate, the heat exchange component comprises a contact surface exposed from the upper surface of the insulating substrate, and the contact surface is contacted with the lower surface of the insulating layer and is used for controlling the temperature of the processed workpiece through heat conduction;
the insulation substrate is provided with a groove, and an opening of the groove is positioned on the upper surface of the insulation substrate; the heat exchange member is disposed in the recess.
2. The electrostatic chuck of claim 1, wherein an upper surface of the heat exchange member serves as the contact surface in contact with a lower surface of the insulating layer;
and a preset gap is arranged between the side surfaces of the heat exchange component and the groove, which are opposite to each other, and the width of the preset gap is larger than the change amount of thermal expansion of the insulating substrate.
3. The electrostatic chuck of claim 2, wherein a compressible bonding material is filled in the preset gap and between the heat exchange member and the bottom surface of the recess opposite each other; and the upper surface of the heat exchange member is covered with the compressible adhesive material.
4. The electrostatic chuck of claim 3, wherein said bonding material comprises silicone grease or polytetrafluoroethylene.
5. The electrostatic chuck according to any one of claims 1-4, wherein the heat exchanging element comprises a heat exchanging body and a heat exchanging channel provided in the heat exchanging body, wherein,
the heat exchange channels are used for exchanging heat with the heat exchange body by conveying a heat exchange medium.
6. The electrostatic chuck of claim 5, further comprising an input conduit, an output conduit, and a temperature control device, wherein,
two ends of the input pipeline are respectively connected with the input end of the heat exchange channel and the output end of the temperature control device;
two ends of the output pipeline are respectively connected with the output end of the heat exchange channel and the input end of the temperature control device;
the temperature control device is used for adjusting the temperature of the heat exchange medium.
7. The electrostatic chuck of claim 6, wherein said input conduit and said output conduit are each insulated hoses.
8. The electrostatic chuck of claim 5, wherein said heat exchange channels are uniformly distributed relative to said contact surface.
9. The electrostatic chuck of claim 8, wherein the heat exchange channel comprises a plurality of annular sub-channels equally spaced around a plurality of circumferences centered at a center of the contact surface and having different radii; and each two adjacent annular sub-channels are connected in series and communicated through connecting sub-channels arranged at intervals, so that a plurality of annular sub-channels form a continuous channel.
10. A semiconductor processing apparatus comprising a reaction chamber and an electrostatic chuck disposed in the reaction chamber, wherein the electrostatic chuck employs the electrostatic chuck of any one of claims 1-9.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110096674.6A CN112864079B (en) | 2021-01-25 | 2021-01-25 | Electrostatic chuck and semiconductor processing equipment |
| PCT/CN2021/139936 WO2022156463A1 (en) | 2021-01-25 | 2021-12-21 | Electrostatic chuck and semiconductor processing device |
| TW110147940A TWI808576B (en) | 2021-01-25 | 2021-12-21 | Electrostatic chuck and semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110096674.6A CN112864079B (en) | 2021-01-25 | 2021-01-25 | Electrostatic chuck and semiconductor processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112864079A CN112864079A (en) | 2021-05-28 |
| CN112864079B true CN112864079B (en) | 2024-02-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110096674.6A Active CN112864079B (en) | 2021-01-25 | 2021-01-25 | Electrostatic chuck and semiconductor processing equipment |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN112864079B (en) |
| TW (1) | TWI808576B (en) |
| WO (1) | WO2022156463A1 (en) |
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| CN112864079B (en) * | 2021-01-25 | 2024-02-27 | 北京北方华创微电子装备有限公司 | Electrostatic chuck and semiconductor processing equipment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001302330A (en) * | 2000-04-24 | 2001-10-31 | Ibiden Co Ltd | Ceramic substrate |
| CN107546168A (en) * | 2016-06-24 | 2018-01-05 | 北京北方华创微电子装备有限公司 | A kind of chip adsorption method, bottom electrode system and semiconductor processing device |
| CN108538744A (en) * | 2017-03-01 | 2018-09-14 | 北京北方华创微电子装备有限公司 | Chuck assembly and semiconductor processing equipment |
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| US5452510A (en) * | 1993-12-20 | 1995-09-26 | International Business Machines Corporation | Method of making an electrostatic chuck with oxide insulator |
| US20030010292A1 (en) * | 2001-07-16 | 2003-01-16 | Applied Materials, Inc. | Electrostatic chuck with dielectric coating |
| JP2015115421A (en) * | 2013-12-10 | 2015-06-22 | 東京エレクトロン株式会社 | Plasma processing apparatus and focus ring |
| JP6215104B2 (en) * | 2014-03-20 | 2017-10-18 | 新光電気工業株式会社 | Temperature control device |
| JP6572788B2 (en) * | 2016-01-29 | 2019-09-11 | 住友大阪セメント株式会社 | Electrostatic chuck device |
| JP2017199851A (en) * | 2016-04-28 | 2017-11-02 | 株式会社ディスコ | Decompression treatment device |
| US20190115241A1 (en) * | 2017-10-12 | 2019-04-18 | Applied Materials, Inc. | Hydrophobic electrostatic chuck |
| JP6971183B2 (en) * | 2018-03-23 | 2021-11-24 | 新光電気工業株式会社 | Board fixing device |
| JP7329917B2 (en) * | 2018-11-30 | 2023-08-21 | 新光電気工業株式会社 | Substrate fixing device |
| CN112864079B (en) * | 2021-01-25 | 2024-02-27 | 北京北方华创微电子装备有限公司 | Electrostatic chuck and semiconductor processing equipment |
-
2021
- 2021-01-25 CN CN202110096674.6A patent/CN112864079B/en active Active
- 2021-12-21 WO PCT/CN2021/139936 patent/WO2022156463A1/en active Application Filing
- 2021-12-21 TW TW110147940A patent/TWI808576B/en active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001302330A (en) * | 2000-04-24 | 2001-10-31 | Ibiden Co Ltd | Ceramic substrate |
| CN107546168A (en) * | 2016-06-24 | 2018-01-05 | 北京北方华创微电子装备有限公司 | A kind of chip adsorption method, bottom electrode system and semiconductor processing device |
| CN108538744A (en) * | 2017-03-01 | 2018-09-14 | 北京北方华创微电子装备有限公司 | Chuck assembly and semiconductor processing equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI808576B (en) | 2023-07-11 |
| CN112864079A (en) | 2021-05-28 |
| WO2022156463A1 (en) | 2022-07-28 |
| TW202230601A (en) | 2022-08-01 |
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