CN106328475A - Plasma etching equipment - Google Patents
Plasma etching equipment Download PDFInfo
- Publication number
- CN106328475A CN106328475A CN201610924485.2A CN201610924485A CN106328475A CN 106328475 A CN106328475 A CN 106328475A CN 201610924485 A CN201610924485 A CN 201610924485A CN 106328475 A CN106328475 A CN 106328475A
- Authority
- CN
- China
- Prior art keywords
- plasma etching
- etching equipment
- spike
- electrostatic absorption
- supporting legs
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The invention discloses a plasma etching equipment, comprising a reaction cavity, an electrostatic adsorption tray in the reaction cavity, and multiple supporting legs in the reaction cavity, wherein multiple supporting legs are connected and support the electrostatic adsorption tray. A wire pipeline, a supply air pipeline and a coolant pipeline are respectively arranged in a hollow structure of each supporting leg. The plasma etching equipment is characterized in that a current model of supporting the electrostatic adsorption tray by a cantilever is changed, and three hollow supporting legs are arranged below the electrostatic adsorption tray to support the tray so that airflow can penetrate through the cavity from top to bottom. The supporting legs are mainly used for supporting the electrostatic adsorption tray and all wire pipelines, supply air pipelines and coolant pipelines of the tray are routed inside the supporting legs; in comparison with an existing traditional cantilever, branched routing in supporting legs is relatively independent and safe and is convenient to maintain in a later stage, airflow in the cavity uniformly flows from top to bottom, and uniformity in an etching process is improved, thus the product yield is also improved.
Description
Technical field
The present invention relates to field of semiconductor manufacture, and particularly to a kind of plasma etching equipment, specially Electrostatic Absorption
The structure design of dish bracing frame.
Background technology
Plasma etching, is modal a kind of form in dry etching, and its principle is to be exposed to the gas of electronics regions
Body formed plasma, consequent ionized gas and release high energy electron composition gas, thus define plasma or
Ion, when ionized gas atom is by electric field acceleration, can discharge enough strength and surface expulsion power tightly jointing material or erosion
Carve surface.
Refer to Fig. 1, Fig. 1 and show in prior art the plasma etching equipment structural representation using cantilever support.
At present, the cavity 1 within LAM plasma etching equipment of 12 cun is an orbicular symmetric cavity, its purpose is to ensure gas
The symmetric uniformity that body is movement-oriented, this method for designing allows for Electrostatic Absorption dish 3 it is necessary to have a cantilever 4 is supported
In the centre of whole cavity 1, but can quilt when causing gas to flow toward underface from surface just because of the design of this cantilever 4
This cantilever 4 stops, the air velocity causing local is partially slow, thus causes the etch rate of this part of crystal column surface compared with other
Region is the slowest.The wafer schematic diagram showing in prior art under certain etch rate with reference to Fig. 2, Fig. 2.
The region limitation of cantilever, also makes the water/gas/electric line in Electrostatic Absorption dish the most reasonably connect up, causes
Inconvenient and potential safety hazard that may be present during later maintenance maintenance.
Summary of the invention
The present invention proposes a kind of plasma etching equipment, changes existing cantilever mode, uses bracing frame to lift electrostatic
Suction tray, when allowing gas from up to down flow, moves towards the most uniform.Can cold by Electrostatic Absorption dish in hollow support foot
But liquid pipeline, raceway for wiring, pneumatic operated valve supply air line independence reasonable line arrangement is safeguarded repair and maintenance to play, is disposed during fault convenient fast
Victory, safely and effectively acts on.
In order to achieve the above object, the present invention proposes a kind of plasma etching equipment, including:
Reaction cavity；
Electrostatic Absorption dish, is arranged at inside described reaction cavity；
Multiple spikes, are arranged at inside described reaction cavity, and the plurality of spike connects and lift described electrostatic to be inhaled
Attached dish.
Further, the plurality of spike is uniformly distributed in below described Electrostatic Absorption dish.
Further, the plurality of spike is obliquely installed below described Electrostatic Absorption dish.
Further, the plurality of spike one end is against described reaction cavity bottom inside, and the other end is connected to described
Electrostatic Absorption tray bottom periphery.
Further, the quantity of the plurality of spike is 3.
Further, the plurality of spike is internal for hollow structure setting.
Further, raceway for wiring, supply air line, and cooling it are respectively arranged with in the hollow structure of the plurality of spike
Liquid pipeline.
The plasma etching equipment that the present invention proposes, changes the pattern of existing cantilever support Electrostatic Absorption dish, changes into quiet
Three hollow support footrests act Electrostatic Absorption dishes are made in the lower section of electro-adsorption dish can the most through cavity by air-flow.Prop up spike
Main Function be to support Electrostatic Absorption dish, inside is used for walking the raceway for wiring used by Electrostatic Absorption dish, and supply air line is, and cooling
Liquid pipeline, compares existing tradition cantilever, and a spike INSHIN cabling more individual secure facilitates later maintenance repair and maintenance, and chamber
Internal air-flow Uniform Flow from the top down, improves homogeneity during etching technics, thus improves the yield of product.
Accompanying drawing explanation
Fig. 1 show in prior art the plasma etching equipment structural representation using cantilever support.
Fig. 2 show in prior art the wafer schematic diagram under certain etch rate.
Fig. 3 show the plasma etching equipment structural representation of present pre-ferred embodiments.
Detailed description of the invention
Provide the detailed description of the invention of the present invention below in conjunction with accompanying drawing, but the invention is not restricted to following embodiment.Root
According to following explanation and claims, advantages and features of the invention will be apparent from.It should be noted that, accompanying drawing all uses the simplest
The form changed and all use non-ratio accurately, is only used for conveniently, aids in illustrating lucidly the purpose of the embodiment of the present invention.
Refer to Fig. 3, Fig. 3 and show the plasma etching equipment structural representation of present pre-ferred embodiments.The present invention
A kind of plasma etching equipment is proposed, including: reaction cavity 100；Electrostatic Absorption dish 200, is arranged in described reaction cavity 100
Portion；Multiple spikes 300, are arranged at described reaction cavity 100 internal, and the plurality of spike 300 connects and lift described quiet
Electro-adsorption dish 200.
According to present pre-ferred embodiments, the plurality of spike 300 is uniformly distributed in described Electrostatic Absorption dish 200 times
Side.Further, the plurality of spike 300 is obliquely installed below described Electrostatic Absorption dish 200.The plurality of spike
300 one end are against described reaction cavity 100 bottom inside, and the other end is connected to described Electrostatic Absorption dish 200 bottom periphery.Cavity
Interior air-flow Uniform Flow from the top down, improves homogeneity during etching technics, thus improves the yield of product.
According to present pre-ferred embodiments, the quantity of the plurality of spike 300 is 3.Further, the plurality of
Spike 300 is internal to be arranged for hollow structure.It is respectively arranged with raceway for wiring in the hollow structure of the plurality of spike 300, supplies
Air pipe, and coolant pipeline.Comparing existing tradition cantilever, a spike INSHIN cabling more individual secure facilitates the later stage
Safeguard repair and maintenance.
In sum, the plasma etching equipment that the present invention proposes, change the mould of existing cantilever support Electrostatic Absorption dish
Formula, change into the lower section of Electrostatic Absorption dish do three hollow support footrests lift Electrostatic Absorption dishes can lumen therethrough from top to bottom by air-flow
Body.The Main Function propping up spike is to support Electrostatic Absorption dish, and inside is used for walking the raceway for wiring used by Electrostatic Absorption dish, air supply pipe
Road, and coolant pipeline, compare existing tradition cantilever, and a spike INSHIN cabling more individual secure facilitates later maintenance
Air-flow Uniform Flow from the top down in repair and maintenance, and cavity, improves homogeneity during etching technics, thus improves the yield of product.
Although the present invention is disclosed above with preferred embodiment, so it is not limited to the present invention.Skill belonging to the present invention
Art field has usually intellectual, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Cause
This, protection scope of the present invention is when being as the criterion depending on those as defined in claim.
Claims (7)
1. a plasma etching equipment, it is characterised in that including:
Reaction cavity；
Electrostatic Absorption dish, is arranged at inside described reaction cavity；
Multiple spikes, are arranged at inside described reaction cavity, and the plurality of spike connects and lift described Electrostatic Absorption dish.
Plasma etching equipment the most according to claim 1, it is characterised in that the plurality of spike is uniformly distributed in institute
State below Electrostatic Absorption dish.
Plasma etching equipment the most according to claim 1, it is characterised in that the plurality of spike is obliquely installed in institute
State below Electrostatic Absorption dish.
Plasma etching equipment the most according to claim 1, it is characterised in that the plurality of spike one end is against described
Reaction cavity bottom inside, the other end is connected to described Electrostatic Absorption tray bottom periphery.
Plasma etching equipment the most according to claim 1, it is characterised in that the quantity of the plurality of spike is 3.
Plasma etching equipment the most according to claim 1, it is characterised in that the plurality of spike is internal for hollow knot
Structure is arranged.
Plasma etching equipment the most according to claim 6, it is characterised in that in the hollow structure of the plurality of spike
It is respectively arranged with raceway for wiring, supply air line, and coolant pipeline.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610924485.2A CN106328475A (en) | 2016-10-24 | 2016-10-24 | Plasma etching equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610924485.2A CN106328475A (en) | 2016-10-24 | 2016-10-24 | Plasma etching equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106328475A true CN106328475A (en) | 2017-01-11 |
Family
ID=57819362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610924485.2A Pending CN106328475A (en) | 2016-10-24 | 2016-10-24 | Plasma etching equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106328475A (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2480984Y (en) * | 2001-04-16 | 2002-03-06 | 华邦电子股份有限公司 | Wafe lifting device for platform of etching machine |
| US20020078891A1 (en) * | 2000-11-09 | 2002-06-27 | Chang-Woong Chu | Wafer stage including electrostatic chuck and method for dechucking wafer using the wafer stage |
| CN1891671A (en) * | 2005-07-04 | 2007-01-10 | 京瓷株式会社 | Composite body, wafer supporting member using the same, and method for processing wafer |
| CN101391732A (en) * | 2007-09-17 | 2009-03-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Lifting device |
| JP2011211067A (en) * | 2010-03-30 | 2011-10-20 | Tokyo Electron Ltd | Substrate treatment apparatus and substrate removal device to be used for the same |
| CN102270558A (en) * | 2010-06-04 | 2011-12-07 | 中微半导体设备(上海)有限公司 | Mounting device used for vacuum treatment system |
| CN103811393A (en) * | 2012-11-07 | 2014-05-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Electrostatic chuck for carrying wafer and plasma processing equipment |
| CN103890928A (en) * | 2011-10-28 | 2014-06-25 | 应用材料公司 | Electrostatic chuck |
| CN104658844A (en) * | 2013-11-22 | 2015-05-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Tray supporting device and plasma machining equipment |
-
2016
- 2016-10-24 CN CN201610924485.2A patent/CN106328475A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020078891A1 (en) * | 2000-11-09 | 2002-06-27 | Chang-Woong Chu | Wafer stage including electrostatic chuck and method for dechucking wafer using the wafer stage |
| CN2480984Y (en) * | 2001-04-16 | 2002-03-06 | 华邦电子股份有限公司 | Wafe lifting device for platform of etching machine |
| CN1891671A (en) * | 2005-07-04 | 2007-01-10 | 京瓷株式会社 | Composite body, wafer supporting member using the same, and method for processing wafer |
| CN101391732A (en) * | 2007-09-17 | 2009-03-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Lifting device |
| JP2011211067A (en) * | 2010-03-30 | 2011-10-20 | Tokyo Electron Ltd | Substrate treatment apparatus and substrate removal device to be used for the same |
| CN102270558A (en) * | 2010-06-04 | 2011-12-07 | 中微半导体设备(上海)有限公司 | Mounting device used for vacuum treatment system |
| CN103890928A (en) * | 2011-10-28 | 2014-06-25 | 应用材料公司 | Electrostatic chuck |
| CN103811393A (en) * | 2012-11-07 | 2014-05-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Electrostatic chuck for carrying wafer and plasma processing equipment |
| CN104658844A (en) * | 2013-11-22 | 2015-05-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Tray supporting device and plasma machining equipment |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170111 |