CN101842955A - 用于本地互连网络(lin)总线和类似物的装置接口的自适应静电放电(esd)保护 - Google Patents
用于本地互连网络(lin)总线和类似物的装置接口的自适应静电放电(esd)保护 Download PDFInfo
- Publication number
- CN101842955A CN101842955A CN200880113868A CN200880113868A CN101842955A CN 101842955 A CN101842955 A CN 101842955A CN 200880113868 A CN200880113868 A CN 200880113868A CN 200880113868 A CN200880113868 A CN 200880113868A CN 101842955 A CN101842955 A CN 101842955A
- Authority
- CN
- China
- Prior art keywords
- esd
- integrated circuit
- capacitor
- signal
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004224 protection Effects 0.000 title claims abstract description 50
- 230000003044 adaptive effect Effects 0.000 title claims abstract description 6
- 230000008878 coupling Effects 0.000 claims abstract description 16
- 238000010168 coupling process Methods 0.000 claims abstract description 16
- 238000005859 coupling reaction Methods 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 6
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 6
- 239000003990 capacitor Substances 0.000 claims description 54
- 244000287680 Garcinia dulcis Species 0.000 claims description 4
- 230000002708 enhancing effect Effects 0.000 claims description 4
- 230000036039 immunity Effects 0.000 abstract 2
- 230000002238 attenuated effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 6
- 238000004891 communication Methods 0.000 description 4
- 238000005457 optimization Methods 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000006855 networking Effects 0.000 description 2
- XDKCGKQHVBOOHC-UHFFFAOYSA-N Haloxazolam Chemical compound FC1=CC=CC=C1C1(C2=CC(Br)=CC=C2NC(=O)C2)N2CCO1 XDKCGKQHVBOOHC-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
- H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US98951407P | 2007-11-21 | 2007-11-21 | |
US60/989,514 | 2007-11-21 | ||
US12/174,903 US7885047B2 (en) | 2007-11-21 | 2008-07-17 | Adaptive electrostatic discharge (ESD) protection of device interface for local interconnect network (LIN) bus and the like |
US12/174,903 | 2008-07-17 | ||
PCT/US2008/084362 WO2009067672A2 (en) | 2007-11-21 | 2008-11-21 | Adaptive electrostatic discharge (esd) protection of device interface for local interconnect network (lin) bus and the like |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101842955A true CN101842955A (zh) | 2010-09-22 |
CN101842955B CN101842955B (zh) | 2013-03-06 |
Family
ID=40641690
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008801138685A Expired - Fee Related CN101842955B (zh) | 2007-11-21 | 2008-11-21 | 用于本地互连网络(lin)总线和类似物的装置接口的自适应静电放电(esd)保护 |
CN2008801138581A Expired - Fee Related CN101842954B (zh) | 2007-11-21 | 2008-11-21 | 用于本地互连网络(lin)总线和类似物的装置接口的自适应静电放电(esd)保护 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008801138581A Expired - Fee Related CN101842954B (zh) | 2007-11-21 | 2008-11-21 | 用于本地互连网络(lin)总线和类似物的装置接口的自适应静电放电(esd)保护 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7876540B2 (zh) |
EP (2) | EP2212982B1 (zh) |
KR (2) | KR101576261B1 (zh) |
CN (2) | CN101842955B (zh) |
AT (2) | ATE540461T1 (zh) |
TW (2) | TWI455433B (zh) |
WO (2) | WO2009067672A2 (zh) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009080777A2 (en) * | 2007-12-21 | 2009-07-02 | St Wireless S.A. | Integrated circuit with a dc-dc converter |
TW200937607A (en) * | 2008-02-27 | 2009-09-01 | Elan Microelectronics Corp | Electrostatic discharge (ESD) protection device for high-voltage input-output pad |
US8390970B2 (en) * | 2010-10-27 | 2013-03-05 | Infineon Technologies Ag | Method and system for electrostatic discharge protection |
US8462473B2 (en) | 2010-12-21 | 2013-06-11 | Microchip Technology Incorporated | Adaptive electrostatic discharge (ESD) protection circuit |
DE102011109596B4 (de) | 2011-08-05 | 2018-05-09 | Austriamicrosystems Ag | Schaltungsanordnung zum Schutz gegen elektrostatische Entladungen |
US8576524B1 (en) * | 2011-09-19 | 2013-11-05 | Cypress Semiconductor Corporation | Diode based ESD triggers |
US8947844B2 (en) * | 2012-05-14 | 2015-02-03 | Middle Alantic Products, Inc. | Series type surge suppressor and clamping circuit |
DE102012108105A1 (de) | 2012-08-31 | 2014-03-06 | Ams Ag | Schutzschaltung und Verfahren zum Schutz einer Schaltung |
US9438030B2 (en) * | 2012-11-20 | 2016-09-06 | Freescale Semiconductor, Inc. | Trigger circuit and method for improved transient immunity |
US9762052B2 (en) | 2013-03-15 | 2017-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Circuit and method of electrically decoupling nodes |
CN104660244A (zh) * | 2013-11-22 | 2015-05-27 | 天津市北海通信技术有限公司 | 一种网络接口及esd保护器件电路 |
TW201533880A (zh) * | 2014-02-24 | 2015-09-01 | Nuvoton Technology Corp | 靜電放電保護電路及半導體元件 |
US9166646B1 (en) * | 2014-08-25 | 2015-10-20 | Nxp B.V. | Transceiver circuit and method for operating a transceiver circuit |
CN105357092B (zh) * | 2015-11-24 | 2019-01-18 | 上海爱斯达克汽车空调系统有限公司 | 一种汽车空调用旋钮Lin总线数据结构及通讯方法 |
US10079227B2 (en) | 2016-02-26 | 2018-09-18 | Texas Instruments Incorporated | Apparatus for rectified RC trigger of back-to-back MOS-SCR ESD protection |
CN110402493B (zh) * | 2016-12-26 | 2023-01-13 | 德州仪器公司 | 动态触发式静电放电单元 |
US10892756B2 (en) | 2017-12-26 | 2021-01-12 | Texas Instruments Incorporated | Reducing noise effects in electrostatic discharge circuits |
CN109742745B (zh) * | 2018-12-29 | 2020-04-10 | 长江存储科技有限责任公司 | 静电放电电路及集成电路 |
EP3742678B1 (en) * | 2019-05-24 | 2022-02-23 | NXP USA, Inc. | Integrated circuit with physical layer interface circuit |
CN110518561B (zh) * | 2019-07-26 | 2020-10-16 | 北京大学 | 一种电源钳位esd保护电路及集成电路结构 |
US10938387B1 (en) | 2020-06-24 | 2021-03-02 | Cypress Semiconductor Corporation | Local interconnect network (LIN) driver circuit |
US11586798B1 (en) | 2021-08-13 | 2023-02-21 | International Business Machines Corporation | Avoiding electrostatic discharge events from cross-hierarchy tie nets |
TWI831372B (zh) * | 2022-09-14 | 2024-02-01 | 英業達股份有限公司 | 一對多通訊電路 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US594177A (en) * | 1897-11-23 | Corset | ||
TW351010B (en) * | 1998-02-12 | 1999-01-21 | Winbond Electronics Corp | Static discharge protective circuit for recording of static discharging |
US5946177A (en) | 1998-08-17 | 1999-08-31 | Motorola, Inc. | Circuit for electrostatic discharge protection |
US6433983B1 (en) * | 1999-11-24 | 2002-08-13 | Honeywell Inc. | High performance output buffer with ESD protection |
US6597227B1 (en) * | 2000-01-21 | 2003-07-22 | Atheros Communications, Inc. | System for providing electrostatic discharge protection for high-speed integrated circuits |
KR100861193B1 (ko) * | 2002-07-18 | 2008-09-30 | 주식회사 하이닉스반도체 | 정전기 방전 보호 회로 |
US7102862B1 (en) * | 2002-10-29 | 2006-09-05 | Integrated Device Technology, Inc. | Electrostatic discharge protection circuit |
US7187530B2 (en) | 2002-12-27 | 2007-03-06 | T-Ram Semiconductor, Inc. | Electrostatic discharge protection circuit |
US8412409B2 (en) * | 2003-10-08 | 2013-04-02 | Continental Teves Ag & Co. Ohg | Integrated microprocessor system for safety-critical regulations |
US20060250732A1 (en) * | 2005-05-06 | 2006-11-09 | Peachey Nathaniel M | Transient pulse, substrate-triggered biCMOS rail clamp for ESD abatement |
CN100536132C (zh) * | 2005-06-20 | 2009-09-02 | 昂宝电子(上海)有限公司 | 对多种电压下的信号的静电放电保护系统与方法 |
US7660086B2 (en) * | 2006-06-08 | 2010-02-09 | Cypress Semiconductor Corporation | Programmable electrostatic discharge (ESD) protection device |
US7495878B2 (en) * | 2007-03-22 | 2009-02-24 | Bae Systems Information And Electronic Systems Integration Inc. | Decoupling capacitor control circuit and method for enhanced ESD performance |
-
2008
- 2008-07-17 US US12/174,802 patent/US7876540B2/en active Active
- 2008-07-17 US US12/174,903 patent/US7885047B2/en active Active
- 2008-11-20 TW TW097144927A patent/TWI455433B/zh not_active IP Right Cessation
- 2008-11-20 TW TW097144926A patent/TWI435436B/zh not_active IP Right Cessation
- 2008-11-21 WO PCT/US2008/084362 patent/WO2009067672A2/en active Application Filing
- 2008-11-21 CN CN2008801138685A patent/CN101842955B/zh not_active Expired - Fee Related
- 2008-11-21 WO PCT/US2008/084365 patent/WO2009067673A2/en active Application Filing
- 2008-11-21 EP EP08852419A patent/EP2212982B1/en active Active
- 2008-11-21 EP EP08851188A patent/EP2212981B1/en active Active
- 2008-11-21 KR KR1020107009462A patent/KR101576261B1/ko active IP Right Grant
- 2008-11-21 KR KR1020107008914A patent/KR101467441B1/ko active IP Right Grant
- 2008-11-21 CN CN2008801138581A patent/CN101842954B/zh not_active Expired - Fee Related
- 2008-11-21 AT AT08852419T patent/ATE540461T1/de active
- 2008-11-21 AT AT08851188T patent/ATE540460T1/de active
Also Published As
Publication number | Publication date |
---|---|
TW200937790A (en) | 2009-09-01 |
TW200937617A (en) | 2009-09-01 |
EP2212982B1 (en) | 2012-01-04 |
EP2212982A2 (en) | 2010-08-04 |
KR20100090760A (ko) | 2010-08-17 |
TWI455433B (zh) | 2014-10-01 |
KR20100075979A (ko) | 2010-07-05 |
CN101842954A (zh) | 2010-09-22 |
WO2009067672A2 (en) | 2009-05-28 |
EP2212981A2 (en) | 2010-08-04 |
KR101576261B1 (ko) | 2015-12-09 |
KR101467441B1 (ko) | 2014-12-01 |
ATE540460T1 (de) | 2012-01-15 |
TWI435436B (zh) | 2014-04-21 |
US20090128970A1 (en) | 2009-05-21 |
WO2009067673A3 (en) | 2009-07-09 |
US7876540B2 (en) | 2011-01-25 |
CN101842955B (zh) | 2013-03-06 |
US7885047B2 (en) | 2011-02-08 |
US20090128969A1 (en) | 2009-05-21 |
ATE540461T1 (de) | 2012-01-15 |
WO2009067673A2 (en) | 2009-05-28 |
CN101842954B (zh) | 2013-06-12 |
WO2009067672A3 (en) | 2009-07-09 |
EP2212981B1 (en) | 2012-01-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101842955B (zh) | 用于本地互连网络(lin)总线和类似物的装置接口的自适应静电放电(esd)保护 | |
CN103339727B (zh) | 自适应静电放电(esd)保护电路 | |
US7869174B2 (en) | Semiconductor device with a plurality of power supply systems | |
US8946943B2 (en) | High side switch | |
JP3990352B2 (ja) | 半導体集積回路装置 | |
JPH1175320A (ja) | 過電圧保護回路 | |
US11256050B2 (en) | Optical communication module | |
JP2020195136A (ja) | 少なくとも1つの信号発生器からデジタル入力信号を受信するためのデジタル入力回路 | |
US20060018063A1 (en) | Method and circuit arrangement for esd protection of a connection terminal | |
US7130175B2 (en) | Monolithic integratable circuit arrangement for protection against a transient voltage | |
JP3272809B2 (ja) | 半導体集積回路装置 | |
US12104951B2 (en) | Photocoupler sensing circuit and operation method thereof | |
JP7385154B2 (ja) | システムコンポーネント、電子デバイス及び制御信号を提供する方法 | |
JPH04367139A (ja) | 出力保護回路付き信号送信回路 | |
US20240255347A1 (en) | Photocoupler sensing circuit and operation method thereof | |
CN114242715A (zh) | 一种双向静电放电保护模块 | |
JP2011040520A (ja) | 保護回路 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200407 Address after: 4-5 Hall Road, Sandford, 18 Dublin, Ireland Patentee after: Sunley storage Co.,Ltd. Address before: Arizona, USA Patentee before: MICROCHIP TECHNOLOGY Inc. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200729 Address after: Ai Erlandubailin Patentee after: Argona Technology Co.,Ltd. Address before: 4-5 Hall Road, Sandford, 18 Dublin, Ireland Patentee before: Sunley storage Co.,Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130306 Termination date: 20211121 |