CN101828409B - 具有使用接合引线的增强型冲击验证的硅麦克风 - Google Patents
具有使用接合引线的增强型冲击验证的硅麦克风 Download PDFInfo
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- CN101828409B CN101828409B CN200880110129.0A CN200880110129A CN101828409B CN 101828409 B CN101828409 B CN 101828409B CN 200880110129 A CN200880110129 A CN 200880110129A CN 101828409 B CN101828409 B CN 101828409B
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 76
- 239000010703 silicon Substances 0.000 title claims abstract description 76
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 75
- 238000009863 impact test Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 238000000034 method Methods 0.000 claims abstract description 23
- 239000012528 membrane Substances 0.000 claims description 173
- 239000011148 porous material Substances 0.000 claims description 40
- 125000006850 spacer group Chemical group 0.000 claims description 15
- 241000811606 Ancora Species 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000013016 damping Methods 0.000 abstract description 5
- 239000002245 particle Substances 0.000 abstract description 2
- 239000003990 capacitor Substances 0.000 abstract 1
- 238000013461 design Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 230000006378 damage Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 208000027418 Wounds and injury Diseases 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 208000014674 injury Diseases 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000006396 nitration reaction Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 208000033999 Device damage Diseases 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 206010044565 Tremor Diseases 0.000 description 1
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000019771 cognition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- -1 silicon ion Chemical class 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/973,075 | 2007-10-05 | ||
US11/973,075 US8045733B2 (en) | 2007-10-05 | 2007-10-05 | Silicon microphone with enhanced impact proof structure using bonding wires |
PCT/SG2008/000369 WO2009045170A1 (en) | 2007-10-05 | 2008-09-29 | Silicon microphone with enhanced impact proof structure using bonding wires |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101828409A CN101828409A (zh) | 2010-09-08 |
CN101828409B true CN101828409B (zh) | 2012-09-05 |
Family
ID=40523266
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200880110129.0A Expired - Fee Related CN101828409B (zh) | 2007-10-05 | 2008-09-29 | 具有使用接合引线的增强型冲击验证的硅麦克风 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8045733B2 (zh) |
CN (1) | CN101828409B (zh) |
TW (1) | TWI386073B (zh) |
WO (1) | WO2009045170A1 (zh) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7346178B2 (en) * | 2004-10-29 | 2008-03-18 | Silicon Matrix Pte. Ltd. | Backplateless silicon microphone |
US8045733B2 (en) | 2007-10-05 | 2011-10-25 | Shandong Gettop Acoustic Co., Ltd. | Silicon microphone with enhanced impact proof structure using bonding wires |
US8467559B2 (en) * | 2008-02-20 | 2013-06-18 | Shandong Gettop Acoustic Co., Ltd. | Silicon microphone without dedicated backplate |
JP5374077B2 (ja) * | 2008-06-16 | 2013-12-25 | ローム株式会社 | Memsセンサ |
US8134215B2 (en) * | 2008-10-09 | 2012-03-13 | United Microelectronics Corp. | MEMS diaphragm |
CN101415137B (zh) * | 2008-11-14 | 2012-06-06 | 瑞声声学科技(深圳)有限公司 | 电容式麦克风 |
CN102714773A (zh) * | 2009-11-16 | 2012-10-03 | 美国亚德诺半导体公司 | 背板具有特定形状的通孔的传声器 |
JP5083369B2 (ja) * | 2010-04-28 | 2012-11-28 | オムロン株式会社 | 音響センサ及びその製造方法 |
CN102457800A (zh) * | 2010-10-21 | 2012-05-16 | 北京卓锐微技术有限公司 | 无背极板的mems电容式麦克风及其制备方法 |
JP5872163B2 (ja) | 2011-01-07 | 2016-03-01 | オムロン株式会社 | 音響トランスデューサ、および該音響トランスデューサを利用したマイクロフォン |
US9380380B2 (en) | 2011-01-07 | 2016-06-28 | Stmicroelectronics S.R.L. | Acoustic transducer and interface circuit |
US9181086B1 (en) | 2012-10-01 | 2015-11-10 | The Research Foundation For The State University Of New York | Hinged MEMS diaphragm and method of manufacture therof |
CN102932720B (zh) * | 2012-11-06 | 2016-05-25 | 山东共达电声股份有限公司 | Mems麦克风 |
CN102932721B (zh) * | 2012-11-07 | 2015-10-21 | 山东共达电声股份有限公司 | Mems传声器 |
US9143870B2 (en) * | 2012-11-09 | 2015-09-22 | Invensense, Inc. | Microphone system with mechanically-coupled diaphragms |
DE102013201795A1 (de) * | 2013-02-05 | 2014-08-07 | Robert Bosch Gmbh | Mikromechanisches Bauelement mit einer Membranstruktur |
US9624091B2 (en) | 2013-05-31 | 2017-04-18 | Robert Bosch Gmbh | Trapped membrane |
US9344808B2 (en) * | 2014-03-18 | 2016-05-17 | Invensense, Inc. | Differential sensing acoustic sensor |
JP6467837B2 (ja) * | 2014-09-25 | 2019-02-13 | オムロン株式会社 | 音響トランスデューサ及びマイクロフォン |
CN106535072A (zh) * | 2016-12-05 | 2017-03-22 | 歌尔股份有限公司 | 一种mems麦克风芯片以及mems麦克风 |
CN108810773A (zh) * | 2017-04-26 | 2018-11-13 | 中芯国际集成电路制造(上海)有限公司 | 麦克风及其制造方法 |
TWI667925B (zh) * | 2018-01-15 | 2019-08-01 | 美律實業股份有限公司 | 壓電傳感器 |
TWI692255B (zh) * | 2018-10-30 | 2020-04-21 | 美律實業股份有限公司 | 微機電傳感器 |
DE102020206910A1 (de) | 2019-06-07 | 2020-12-10 | Knowles Electronics, Llc | Akustikwandler für mikrofonanordnungen mit nicht kreisförmigen blenden |
CN110775937B (zh) * | 2019-12-31 | 2020-05-08 | 共达电声股份有限公司 | Mems膜片及mems传感器芯片 |
CN111405441B (zh) * | 2020-04-16 | 2021-06-15 | 瑞声声学科技(深圳)有限公司 | 一种压电式mems麦克风 |
CN214177565U (zh) * | 2020-11-17 | 2021-09-10 | 瑞声声学科技(深圳)有限公司 | Mems麦克风芯片 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4182937A (en) * | 1978-09-21 | 1980-01-08 | International Standard Electric Corp. | Mechanically biased semiconductor strain sensitive microphone |
CN1498513A (zh) * | 2000-08-11 | 2004-05-19 | ��˹��ŵ�� | 微型宽带换能器 |
CN1694575A (zh) * | 2004-05-09 | 2005-11-09 | 美律实业股份有限公司 | 电容式硅基微麦克风及其制法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5452268A (en) * | 1994-08-12 | 1995-09-19 | The Charles Stark Draper Laboratory, Inc. | Acoustic transducer with improved low frequency response |
US6535460B2 (en) * | 2000-08-11 | 2003-03-18 | Knowles Electronics, Llc | Miniature broadband acoustic transducer |
US6741709B2 (en) | 2000-12-20 | 2004-05-25 | Shure Incorporated | Condenser microphone assembly |
US7346178B2 (en) * | 2004-10-29 | 2008-03-18 | Silicon Matrix Pte. Ltd. | Backplateless silicon microphone |
US7804969B2 (en) * | 2006-08-07 | 2010-09-28 | Shandong Gettop Acoustic Co., Ltd. | Silicon microphone with impact proof structure |
US8045733B2 (en) | 2007-10-05 | 2011-10-25 | Shandong Gettop Acoustic Co., Ltd. | Silicon microphone with enhanced impact proof structure using bonding wires |
US8467559B2 (en) * | 2008-02-20 | 2013-06-18 | Shandong Gettop Acoustic Co., Ltd. | Silicon microphone without dedicated backplate |
US7829366B2 (en) * | 2008-02-29 | 2010-11-09 | Freescale Semiconductor, Inc. | Microelectromechanical systems component and method of making same |
-
2007
- 2007-10-05 US US11/973,075 patent/US8045733B2/en active Active
-
2008
- 2008-09-26 TW TW097137082A patent/TWI386073B/zh active
- 2008-09-29 CN CN200880110129.0A patent/CN101828409B/zh not_active Expired - Fee Related
- 2008-09-29 WO PCT/SG2008/000369 patent/WO2009045170A1/en active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4182937A (en) * | 1978-09-21 | 1980-01-08 | International Standard Electric Corp. | Mechanically biased semiconductor strain sensitive microphone |
CN1498513A (zh) * | 2000-08-11 | 2004-05-19 | ��˹��ŵ�� | 微型宽带换能器 |
CN1694575A (zh) * | 2004-05-09 | 2005-11-09 | 美律实业股份有限公司 | 电容式硅基微麦克风及其制法 |
Non-Patent Citations (2)
Title |
---|
JP特开2002-95093A 2002.03.29 |
JP特开2007-67659A 2007.03.15 |
Also Published As
Publication number | Publication date |
---|---|
TW200917878A (en) | 2009-04-16 |
CN101828409A (zh) | 2010-09-08 |
US8045733B2 (en) | 2011-10-25 |
TWI386073B (zh) | 2013-02-11 |
US20090092273A1 (en) | 2009-04-09 |
WO2009045170A1 (en) | 2009-04-09 |
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Owner name: SHANDONG GONGDA AUDIO CO., LTD. Free format text: FORMER OWNER: ALTUS TECHNOLOGIES PTE LTD. Effective date: 20110328 |
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Effective date of registration: 20110328 Address after: 261200 No. 69, Longquan street, Fangzi District, Weifang, Shandong, China Applicant after: SHANDONG GETTOP ACOUSTIC Co.,Ltd. Address before: Singapore pan industrial complex Applicant before: Xinjingyuan micro electromechanical (private) Co.,Ltd. |
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Address after: 261200 No. 68 Fengshan Road, Fangzi District, Weifang City, Shandong Province Patentee after: GONGDA ELECTROACOUSTIC Co.,Ltd. Address before: 261200 No. 69 Longquan Street, Fangzi District, Weifang City, Shandong Province Patentee before: Shandong Gettop Acoustic Co.,Ltd. |
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