CN101816044A - 导电组合物以及用于制造半导体装置的方法：含镁添加剂 - Google Patents

导电组合物以及用于制造半导体装置的方法：含镁添加剂 Download PDF

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Publication number
CN101816044A
CN101816044A CN200880110508A CN200880110508A CN101816044A CN 101816044 A CN101816044 A CN 101816044A CN 200880110508 A CN200880110508 A CN 200880110508A CN 200880110508 A CN200880110508 A CN 200880110508A CN 101816044 A CN101816044 A CN 101816044A
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CN
China
Prior art keywords
composition
thick film
magnesium
glass
firing
Prior art date
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Pending
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CN200880110508A
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English (en)
Chinese (zh)
Inventor
R·J·S·杨
M·罗斯
K·R·米克斯卡
A·F·卡罗尔
K·W·杭
A·G·普林斯
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EIDP Inc
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EI Du Pont de Nemours and Co
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Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of CN101816044A publication Critical patent/CN101816044A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31536—Including interfacial reaction product of adjacent layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Dispersion Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Conductive Materials (AREA)
  • Photovoltaic Devices (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Glass Compositions (AREA)
CN200880110508A 2007-10-18 2008-10-16 导电组合物以及用于制造半导体装置的方法：含镁添加剂 Pending CN101816044A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US98091607P 2007-10-18 2007-10-18
US60/980,916 2007-10-18
PCT/US2008/080133 WO2009052266A1 (en) 2007-10-18 2008-10-16 Conductive compositions and processes for use in the manufacture of semiconductor devices: mg-containing additive

Publications (1)

Publication Number Publication Date
CN101816044A true CN101816044A (zh) 2010-08-25

Family

ID=40297673

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200880110508A Pending CN101816044A (zh) 2007-10-18 2008-10-16 导电组合物以及用于制造半导体装置的方法：含镁添加剂

Country Status (7)

Country Link
US (2) US7790065B2 (enExample)
EP (1) EP2193526A1 (enExample)
JP (1) JP2011503772A (enExample)
KR (1) KR20100080614A (enExample)
CN (1) CN101816044A (enExample)
TW (1) TW200931449A (enExample)
WO (1) WO2009052266A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102157219A (zh) * 2011-01-12 2011-08-17 西安银泰新能源材料科技有限公司 晶体硅太阳能电池正面电极银浆及其制备方法
CN110337423A (zh) * 2017-03-24 2019-10-15 贺利氏贵金属北美康舍霍肯有限责任公司 用于导电膏组合物的低蚀刻和非接触式玻璃

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EP1997941B1 (en) * 2006-03-01 2014-12-17 Mitsubishi Gas Chemical Company, Inc. PROCESS FOR PRODUCING ZnO SINGLE CRYSTAL ACCORDING TO METHOD OF LIQUID PHASE GROWTH
JP5151150B2 (ja) * 2006-12-28 2013-02-27 株式会社日立製作所 導電性焼結層形成用組成物、これを用いた導電性被膜形成法および接合法
KR20110003360A (ko) * 2008-04-09 2011-01-11 이 아이 듀폰 디 네모아 앤드 캄파니 반도체 소자의 제조에 사용하기 위한 전도성 조성물 및 방법
US8076777B2 (en) * 2008-06-26 2011-12-13 E. I. Du Pont De Nemours And Company Glass compositions used in conductors for photovoltaic cells
KR101144810B1 (ko) * 2009-07-06 2012-05-11 엘지전자 주식회사 태양전지용 전극 페이스트, 이를 이용한 태양전지, 및 태양전지의 제조방법
KR20120083400A (ko) 2009-09-18 2012-07-25 신에쓰 가가꾸 고교 가부시끼가이샤 태양전지, 그 제조방법 및 태양전지 모듈
US8252204B2 (en) * 2009-12-18 2012-08-28 E I Du Pont De Nemours And Company Glass compositions used in conductors for photovoltaic cells
KR101041603B1 (ko) * 2010-12-31 2011-06-15 (주)알가 진공 유리 패널 및 그 제조 방법
US9129725B2 (en) 2010-12-17 2015-09-08 E I Du Pont De Nemours And Company Conductive paste composition containing lithium, and articles made therefrom
US8486308B2 (en) 2010-12-17 2013-07-16 E I Du Pont De Nemours And Company Conductive paste composition containing lithium, and articles made therefrom
KR20120077439A (ko) * 2010-12-30 2012-07-10 주식회사 동진쎄미켐 태양전지의 전극 형성용 페이스트 조성물 및 이를 이용한 전극
KR20140105847A (ko) * 2011-12-22 2014-09-02 헤레우스 프레셔스 메탈즈 노스 아메리카 콘쇼호켄 엘엘씨 낮은 저항 접촉부를 위한 태양 전지 페이스트
EP2607327A1 (en) * 2011-12-23 2013-06-26 Heraeus Precious Metals GmbH & Co. KG Thick-film composition containing antimony oxides and their use in the manufacture of semi-conductor devices
JP2015515714A (ja) * 2012-02-27 2015-05-28 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニーＥ．Ｉ．Ｄｕ Ｐｏｎｔ Ｄｅ Ｎｅｍｏｕｒｓ Ａｎｄ Ｃｏｍｐａｎｙ 銀ペーストおよび太陽電池の製造においてのその使用
JP2013243279A (ja) 2012-05-22 2013-12-05 Namics Corp 太陽電池の電極形成用導電性ペースト
KR102175305B1 (ko) 2013-07-25 2020-11-06 나믹스 가부시끼가이샤 도전성 페이스트 및 결정계 실리콘 태양 전지의 제조 방법
US20160204303A1 (en) * 2013-08-21 2016-07-14 Gtat Corporation Using an active solder to couple a metallic article to a photovoltaic cell
CN103943168B (zh) * 2014-04-18 2016-04-27 西安交通大学 一种Ag(Ti,Zr)/稀土晶体硅太阳电池复合浆料及其制备方法
TWI745562B (zh) * 2017-04-18 2021-11-11 美商太陽帕斯特有限責任公司 導電糊料組成物及用其製成的半導體裝置
CN112041994B (zh) * 2018-03-30 2022-06-21 深圳市首骋新材料科技有限公司 晶硅太阳能电池正面导电浆料及其制备方法和太阳能电池
CN117276364B (zh) * 2023-11-22 2024-04-12 天合光能股份有限公司 太阳能电池及其制备方法、光伏系统

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102157219A (zh) * 2011-01-12 2011-08-17 西安银泰新能源材料科技有限公司 晶体硅太阳能电池正面电极银浆及其制备方法
CN110337423A (zh) * 2017-03-24 2019-10-15 贺利氏贵金属北美康舍霍肯有限责任公司 用于导电膏组合物的低蚀刻和非接触式玻璃

Also Published As

Publication number Publication date
WO2009052266A1 (en) 2009-04-23
KR20100080614A (ko) 2010-07-09
US20100275997A1 (en) 2010-11-04
EP2193526A1 (en) 2010-06-09
US7998371B2 (en) 2011-08-16
JP2011503772A (ja) 2011-01-27
US7790065B2 (en) 2010-09-07
US20090104461A1 (en) 2009-04-23
TW200931449A (en) 2009-07-16

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