CN101814543B - Multi-junction solar cell with high peak current density tunnel junction - Google Patents
Multi-junction solar cell with high peak current density tunnel junction Download PDFInfo
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- CN101814543B CN101814543B CN2010101315405A CN201010131540A CN101814543B CN 101814543 B CN101814543 B CN 101814543B CN 2010101315405 A CN2010101315405 A CN 2010101315405A CN 201010131540 A CN201010131540 A CN 201010131540A CN 101814543 B CN101814543 B CN 101814543B
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- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 22
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims abstract description 21
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 11
- 230000035755 proliferation Effects 0.000 claims description 4
- 239000012528 membrane Substances 0.000 abstract 3
- 230000004888 barrier function Effects 0.000 description 6
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
The invention discloses a multi-junction solar cell with a high peak current density tunnel junction, in particular a high-concentration GaInP/GaInAs/Ge three-junction solar cell, which is characterized in that: a tunnel junction connecting a Ge bottom cell, a GaInAs intermediate cell and a GaInP top cell have five layers, wherein the first layer is an n-type (AlxGa1-x)InP or AlGaAs nonproliferation layer; the second layer is Si and Te codoped GaAs membrane; the third layer is Te doped GaAs membrane; the fourth layer is a C doped AlGaAs membrane; and the fifth layer is a p-type (AlxGa1-x)InP or AlGaAs nonproliferation layer. The solar cell can obtain the peak current density of the tunnel junction of more than 150A/cm<2>. The multi-junction solar cell with the tunnel junction can work under a condition of 2,000-times solar concentration.
Description
Technical field
The present invention relates to a kind of multijunction solar cell, especially a kind of multijunction solar cell with high peak current density tunnel knot.
Background technology
As everyone knows, solar cell is to be transform light energy the opto-electronic device of electric energy, in many knot tandem solar cells; Because each sub-battery is made up of p-n junction; If directly be cascaded,, adopt the tunnel junctions structure to address this problem then because p-n junction is anti-inclined to one side and non-conductive; The peak current of tunnel junctions increases progressively along with the increase of doping content, successively decreases along with the increase of band gap; In order to obtain high efficiency solar cell; Must adopt the tunnel junctions of high conductivity, high tunnelling current, thereby need to use low band gaps material tunnel junctions, increase the doping content of tunnel junctions; Solve because the highly doped series of process problem of bringing, like the diffusion of dopant etc.
Under the optically focused condition, the many knot III-V material compound solar cells in the existing photovoltaic system have obtained to surpass 40% photoelectric conversion efficiency, and can be further enhanced in the near future, and this also is unique 40% the device that reaches of present electricity conversion; Compare the limited use of tying III-V material compound solar cells that makes with high costs with Si or other hull cell more; Solving this cost at present---the awkward method of efficient is to use the high power concentrator system; Replace expensive battery material through more cheap optics; Therefore require multijunction solar cell to want to be operated in the optically focused sun multiple of trying one's best high; Thereby requiring the tunnel junctions peak current of high concentrating solar battery, as far as possible high (as under 2000 times of optically focused sun conditions, the operating current of battery is near 30A/cm
2), then require the tunnel junctions peak current density of battery must be much larger than 30A/cm
2
At present, the tunnel junctions that is usually used in the GaInP/GaInAs/Ge multijunction solar cell is n-GaAs/p-GaAs and n-GaInP/p-AlGaAs, and wherein n type dopant uses Si or Te, uses Si to mix, and doping content is no more than 8 * 10 usually
18Cm
-3, use Te to mix, though can obtain higher doping content, because Te has hysteresis effect in the doping process, doping content is inhomogeneous, tunnel junctions is difficult to obtain high peak current; The n-GaInP/p-AlGaAs tunnel junctions also is difficult to obtain the tunnel junctions of high peak current because band gap is bigger.
Summary of the invention
For addressing the above problem, the present invention is intended to propose a kind of multijunction solar cell with high peak current density tunnel knot.
The present invention addresses the above problem the technical scheme that is adopted: a kind of multijunction solar cell with high peak current density tunnel knot; Contain the GaInP/GaInAs/Ge three-junction solar battery; It is characterized in that: connect that the tunnel junctions of battery and GaInP top battery has five layers among battery at the bottom of the Ge, the GaInAs, ground floor is n type (Al
xGa
1-x) InP or AlGaAs non-proliferation film, the GaAs film that the second layer is to use Si, Te to mix altogether, the 3rd layer of GaAs film that is to use Te to mix, the 4th layer of AlGaAs film that is to use C to mix, layer 5 is p type (Al
xGa
1-x) InP or AlGaAs non-proliferation film.
The processing step for preparing above-mentioned multijunction solar cell is following:
1) in the MOCVD system, use P type Ge as substrate, battery at the bottom of the growth first knot Ge.
2) one deck of and then growing is mixed the n type (Al of Si or Te
xGa
1-x) InP or AlGaAs barrier layer, growth temperature is 630～670 ℃, and growth rate is 0.3～0.5nm/s, and thickness is 30～50nm.
3) in the MOCVD system, be cooled to 580～620 ℃, the GaAs film that uses slow growth one deck Si, Te to mix altogether, growth rate is 0.04～0.08nm/s, thickness is 1～5nm.
4) one deck of and then growing is mixed the GaAs film of Te, and growth temperature is 580～620 ℃, and growth rate is 0.2～0.4nm/s, and thickness is 15～25nm.
5) one deck of and then growing is mixed the AlGaAs film of C, and growth temperature is 580～620 ℃, and growth rate is 0.15～0.3nm/s, and thickness is 15～30nm.
6) in the MOCVD system, be warming up to 630～670 ℃, the one deck of and then growing is mixed the p type (Al of Zn or C
xGa
1-x) InP or AlGaAs barrier layer, growth temperature is 630～670 ℃, and growth rate is 0.3～0.5nm/s, and thickness is 30～50nm.
7) in the MOCVD system, battery among the growth GaInAs.
8) repeat above 2)～6) second tunnel junctions of step growth.
9) and then grow GaInP top battery and GaAs ohmic contact layer are accomplished the growth of high power concentrator multijunction cell.
The present invention can obtain doping content height, the precipitous tunnel junctions in interface, and its peak current density is greater than 150A/cm
2, the multijunction solar cell that contains said tunnel junctions can be worked under the condition that is higher than 2000 times of sun optically focused.
Description of drawings
Fig. 1 is a high power concentrator multijunction solar cell tunnel junctions structural representation of the present invention.
Among the figure: battery at the bottom of the 100:Ge;
200:n type (Al
xGa
1-x) InP or AlGaAs film;
The GaAs film that 210:Si, Te mix altogether;
220: the GaAs film that uses Te to mix;
230: the AlGaAs film that uses C to mix;
240:p type (Al
xGa
1-x) InP or AlGaAs film
Battery among the 300:GaInAs;
400: the second tunnel junctions;
500:GaInP top battery;
The 600:GaAs ohmic contact layer.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is further specified.
A kind of multijunction solar cell with high peak current density tunnel knot as shown in Figure 1 connects that the tunnel junctions of battery 300 and GaInP top battery 500 has five layers among battery 100 at the bottom of the Ge, the GaInAs, and the ground floor barrier layer is a n type GaInP film 200; The second layer is the GaAs film 210 that Si, Te mix altogether; The 3rd layer is the GaAs film 220 that Te mixes; The 4th layer is the AlGaAs film 230 that C mixes; The layer 5 barrier layer is a p type AlGaInP film 240.
The multijunction solar cell of above-mentioned high peak current density tunnel knot, its preparation process is following:
In the MOCVD system, battery 100 at the bottom of the first knot Ge that grown.
Growth one deck n type barrier layer GaInP film 200, growth temperature is 650 ℃, and growth rate is 0.3nm/s, and thickness is 50nm, and the Si doping content is 1 * 10
18Cm
-3
Growth temperature is reduced to 600 ℃, the GaAs film 210 that uses slow growth one deck Si, Te to mix altogether, growth rate is 0.05nm/s, and thickness is 5nm, and doping content is 1 * 10
19Cm
-3
And then the one deck of growing is mixed the GaAs film 220 of Te, and growth temperature is 600 ℃, and growth rate is 0.3nm/s, and thickness is 18nm, and doping content is 1 * 10
19Cm
-3
And then the one deck of growing is mixed the AlGaAs film 230 of C, and Al atomic composition ratio is 0.2, and growth temperature is 600 ℃, and growth rate is 0.2nm/s, and thickness is 25nm, and doping content is 2 * 10
20Cm
-3
Growth temperature is risen to 650 ℃, and growth one deck is mixed the barrier layer AlGaInP film 240 of Zn, and growth rate is 0.4nm/s, and thickness is 50nm, and doping content is 1 * 10
18Cm
-3
In the MOCVD system; Grown among the GaInAs after the battery 300; Repeat first tunnel junctions growth course, promptly repeat the GaAs film 220 of the GaAs film 210 that GaInP film 200 → Si, Te mix altogether → mix Te → mix the growth course of AlGaAs film 230 → AlGaInP film 240 of C, with second tunnel junctions 400 of growing; And then grow GaInP top battery 500 and ohmic contact layer 600 are accomplished the growth of high power concentrator multijunction cell.
Claims (4)
1. the multijunction solar cell with high peak current density tunnel knot contains the GaInP/GaInAs/Ge three-junction solar battery, it is characterized in that: connect that the tunnel junctions of battery and GaInP top battery has five layers among battery at the bottom of the Ge, the GaInAs, ground floor is n type (Al
xGa
1-x) InP or AlGaAs non-proliferation film, the GaAs film that the second layer is to use Si, Te to mix altogether, the 3rd layer of GaAs film that is to use Te to mix, the 4th layer of AlGaAs film that is to use C to mix, layer 5 is p type (Al
xGa
1-x) InP or AlGaAs non-proliferation film.
2. a kind of multijunction solar cell with high peak current density tunnel knot as claimed in claim 1, it is characterized in that: the thickness of the GaAs film that said Si, Te mix altogether is 1～5nm.
3. a kind of multijunction solar cell with high peak current density tunnel knot as claimed in claim 1 is characterized in that: the thickness of the GaAs film that said use Te mixes is 15～25nm.
4. a kind of multijunction solar cell with high peak current density tunnel knot as claimed in claim 1 is characterized in that: the thickness of the AlGaAs film that said use C mixes is 15～30nm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010101315405A CN101814543B (en) | 2010-03-19 | 2010-03-19 | Multi-junction solar cell with high peak current density tunnel junction |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101315405A CN101814543B (en) | 2010-03-19 | 2010-03-19 | Multi-junction solar cell with high peak current density tunnel junction |
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| Publication Number | Publication Date |
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| CN101814543A CN101814543A (en) | 2010-08-25 |
| CN101814543B true CN101814543B (en) | 2012-08-08 |
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102184999B (en) * | 2011-04-02 | 2013-12-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | NPN-structure-based laser photovoltaic cell and preparation process thereof |
| RU2528277C1 (en) * | 2013-04-12 | 2014-09-10 | Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук | METHOD OF MAKING MULTI-STAGE SOLAR CELLS BASED ON Galnp/Galnas/Ge SEMICONDUCTOR STRUCTURE |
| CN103367480B (en) * | 2013-07-19 | 2016-04-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | Gaas tunnel junction and preparation method thereof |
| CN110112236B (en) * | 2019-05-21 | 2021-05-28 | 扬州乾照光电有限公司 | Gallium arsenide multi-junction solar cell and manufacturing method thereof |
| CN110224036B (en) * | 2019-06-19 | 2020-11-17 | 扬州乾照光电有限公司 | Lattice mismatch multi-junction solar cell |
| CN111146305A (en) * | 2020-01-17 | 2020-05-12 | 扬州乾照光电有限公司 | Solar cell |
| CN111628021B (en) * | 2020-06-03 | 2021-11-23 | 苏州长光华芯光电技术股份有限公司 | Semiconductor device and manufacturing method |
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| JP2008028118A (en) * | 2006-07-20 | 2008-02-07 | Honda Motor Co Ltd | Manufacturing method of multijunction solar battery |
| US20090020149A1 (en) * | 2007-07-16 | 2009-01-22 | Woods Lawrence M | Hybrid Multi-Junction Photovoltaic Cells And Associated Methods |
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