CN101814434A - Method for manufacturing nitrogen face polar AlN/AlInN composite back barrier gallium nitride field effect transistor - Google Patents
Method for manufacturing nitrogen face polar AlN/AlInN composite back barrier gallium nitride field effect transistor Download PDFInfo
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- 230000004888 barrier function Effects 0.000 title claims abstract description 99
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 62
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 239000002131 composite material Substances 0.000 title claims abstract description 33
- 229910052757 nitrogen Inorganic materials 0.000 title claims abstract description 26
- 230000005669 field effect Effects 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 18
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 19
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- 229910052738 indium Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
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- 238000003949 trap density measurement Methods 0.000 description 1
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Abstract
The invention discloses a method for manufacturing a nitrogen face polar AlN/AlInN composite back barrier gallium nitride field effect transistor, which comprises the following steps: growing a nitrogen face polar GaN buffer layer, a AlInN modulation-doped layer, a delta doped layer, a AlInN back barrier isolating layer, a AlN back barrier isolating layer, a GaN trench layer and a AlGaN front barrier layer in turn on a substrate; and strengthening the two-dimensional property of trench electron gas by high-density electron gas and strong back barrier, which are produced by the AlN/AlInN composite back barrier layer to manufacture the high-performance nitrogen face polar field effect transistor. In the invention, the density of the electron gas and the thickness of the back barrier are increased to strengthen the quantum restriction the back barrier and reduce the strain and defect density of the back barrier layer; the optimal design of trench well and the front barrier are optimized by using the strong modulation doping provided with the composite back barrier, so the quantum restriction of the front barrier is improved, the transconductance and linear properties of an element are improved, and the schottky barrier and ohmic contact performance is optimized; and the method is suitable for use in researches on high-power, high-PAE, microwave and high-frequency field effect transistors.
Description
Technical field
The present invention relates to a kind of method of making semiconductor device, be specifically related to the method for a kind of manufacturing nitrogen face polar AlN/AlInN composite back barrier gallium nitride field effect transistor.This method is to construct the electron gas of high density, strong two-dimensional characteristics with nitrogen face polar back of the body potential barrier, and high-power in order to make, highly reliable gallium nitride field effect transistor.
Background technology
Nitride is a kind of polar material, has two kinds of polarity of Ga face and N face.The field effect transistor of development is used Ga face polarity mostly at present.In Ga face polar material, there is the positive polarization electric charge on the AlGaN/GaN heterogeneous interface and can be with rank greatly, produce highdensity two-dimensional electron gas, make the power output of GaN field effect transistor improve an order of magnitude than GaAs field effect transistor.But this strong polarization charge has also brought some negative effects when producing the high density electron gas.Field effect transistor requires all to set up high potential barrier at the two ends of raceway groove trap, strengthens the quantum limit of raceway groove trap and the two-dimensional characteristics of electron gas.But, when constructing the potential barrier at the raceway groove trap back side, also produce one deck positive polarization electric charge in back of the body barrier layer terminal, form second counter drain road trap, produce parallel electricity and lead and make the raceway groove folder continuous.External many research units are all at research another kind of polarity, i.e. nitrogen face polar material at present.Under nitrogen face polar, what back of the body barrier terminal produced is the negative polarization electric charge, and it is raised potential barrier and can not form counter drain road trap, has solved the difficult problem of back of the body potential barrier.But, under this polarity, the negative polarization electric charge appears on the AlGaN/GaN interface, can not produce two-dimensional electron gas.For this reason, must add modulation in back of the body potential barrier mixes and produces two-dimensional electron gas.In order to strengthen back of the body potential barrier and to improve modulation doping efficient, everybody uses AlN potential barrier and strong δ to mix.But, there is very big lattice mismatch between AlN and GaN, be difficult to the counterfeit AlN of the joining layer more than growth 3nm on the GaN.This thin AlN barrier layer adds δ doping heterostructure, and not only stress is big, growth difficulty height, defective is many, and thin potential barrier is difficult to stop the high energy electron in the raceway groove to be tunneling to resilient coating, modulation doping efficient is low again, usually will design very wide GaN raceway groove trap and improve electron gas density.Along with the wide increase of GaN raceway groove trap, the electron gas two-dimensional characteristics descends, and the field effect transistor mutual conductance reduces.In addition, the growth early barrier can reduce electron gas density again on channel layer.Therefore hindered the improvement of device performance.In order to improve the modulation doping efficient in the back of the body potential barrier, must use can design new back of the body barrier structure with cut-out method.Recently, external many authors have studied the AlInN potential barrier, and big In atom has increased lattice constant, can be with the GaN lattice match under big Al component ratio.It just in time mates fully with the GaN lattice when Al component ratio is 0.83, eliminates strain.Can enlarge markedly the thickness of back of the body potential barrier with the new material of this lattice match.And AlInN can band gap with existing between the GaN raceway groove greatly, mixes in the AlInN barrier layer and can improve the efficient of modulation doping again, thereby produce strong two-dimensional electron gas in N face heterojunction.On the other hand, field effect transistor is to rely on gate electrode to control channel conduction; Gate electrode is realized by early barrier again.Like this, early barrier still plays crucial effects in device work.Just can not take early barrier into account in order to improve electron gas density in the present nitrogen face polar heterostructure design, and only use simple wide GaN raceway groove trap.This has not only increased the leakage current of gate electrode, and has significantly reduced the mutual conductance and the linear characteristic of device.In addition, the electron wave function in the raceway groove trap is easily to surface seepage, is tunneling to surface state and causes current collapse.Use the AlN/AlInN composite back barrier, can reach very high modulation doping efficient, be enough to produce strong two-dimensional electron gas; Thereby can optimal design early barrier, further improve the performance of field effect transistor.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the invention provides the method for a kind of manufacturing nitrogen face polar AlN/AlInN composite back barrier gallium nitride field effect transistor, this method utilizes nitrogen face polar AlN/AlInN composite potential barrier to construct back of the body potential barrier, increase the width of back of the body potential barrier, reduce strain and defective in the back of the body potential barrier, improve the efficient of modulation doping and the electron gas density in the raceway groove; Simultaneously, the early barrier of optimal design raceway groove improves the early barrier height, and the trap that reduces the raceway groove trap is wide, strengthens the quantum limit of early barrier, improves the control dynamics of gate electrode to channel conduction, stops channel electrons to be tunneling to surface state.Improve the performance that transports of channel electrons thus, improve device mutual conductance and linear properties, suppress current collapse.
Technical scheme: for achieving the above object, the method of a kind of manufacturing nitrogen face polar AlN of the present invention/AlInN composite back barrier gallium nitride field effect transistor, this method may further comprise the steps: 1) on substrate, grow successively nitrogen face polar GaN resilient coating and with the AlInN modulate-doped layer of GaN lattice match; 2) grow successively on the AlInN modulate-doped layer delta doping layer, AlInN back of the body potential barrier separator and AlN back of the body potential barrier separator constitute the AlN/AlInN composite back barrier; 3) growing GaN channel layer and AlGaN early barrier layer on the AlN/AlInN composite back barrier; 4) corrode behind the AlGaN early barrier layer directly on the GaN channel layer making source, leak ohmic contact with dry process; 5) make Schottky barrier on AlGaN early barrier layer, the quantum limit with strengthening AlGaN early barrier layer with cut-out method improves schottky barrier height and width and reduces grid current, improves the linear characteristic of mutual conductance and device work.
The thickness of described AlInN modulate-doped layer is 10～40nm.
The thickness of described AlInN back of the body potential barrier separator is 4nm.
Growing AlInN is carried on the back potential barrier below AlN back of the body potential barrier separator, utilizes the characteristic of AlInN lattice and GaN lattice match, can widen back of the body potential barrier, prevents that the high energy electron in the raceway groove is tunneling to resilient coating and causes leakage current; In can also suppression device radio frequency operation process, thin AlN back of the body potential barrier partial points punctures the back of the body potential barrier collapse that causes, improves device reliability.
Thick AlInN back of the body barrier layer is set below delta doping layer just can mix in the AlInN layer and realize modulation doping, raising modulation doping dynamics, the electron gas density in the increase raceway groove.Thickness, the doping intensity of delta doping layer and the thickness and the doping content of AlInN modulate-doped layer of optimal design AlN back of the body potential barrier separator and AlInN back of the body potential barrier separator, can under reaching high density electron gas prerequisite, reduce strain and defect concentration in the back of the body potential barrier, improve the transport property of raceway groove trap material quality and electron gas.
Under the prerequisite that improves the channel electrons air tightness, the thickness that can optimal design GaN channel layer and the Al component of AlGaN early barrier layer than and thickness, cut out be with of channel layer and early barrier, the quantum limit of reinforcement early barrier, raising electron gas two-dimensional characteristics.On AlGaN early barrier layer, make Schottky barrier, can improve barrier height, increase the early barrier width, both can reduce grid current, can improve control dynamics and the mutual conductance of gate electrode again channel conduction; Make that gate capacitance and mutual conductance remain unchanged under the big gate voltage dynamic change, improve the linear characteristic of device work.
When making source, leakage ohmic contact, corrode AlGaN early barrier layer, directly on the GaN channel layer, make Metal Contact with dry process.Utilize the low barrier height of GaN and the electrode of shortening-electron gas corrugation pitch to increase tunnelling current, reduce ohmic contact resistance.
Beneficial effect: the method for a kind of manufacturing nitrogen face polar AlN of the present invention/AlInN composite back barrier gallium nitride field effect transistor, by AlN back of the body potential barrier separator and AlInN layer are combined into composite back barrier, not only can carry on the back potential barrier by broadening, improve back of the body barrier structure, strengthen the two-dimensional characteristics of electron gas, and the thick AlInN layer of lattice match can provide the environment of realizing that modulation is mixed, the dynamics of increase modulation doping.Simultaneously, the present invention also has the following advantages: the nargin that 1) can significantly improve the potential barrier design; 2) the AlN layer thickness and the δ doping intensity that can reduce lattice mismatch reduces fault of construction and trap density, improves the transport property of channel electrons gas, improves device reliability; 3) can cut out and to be with by the optimal design of early barrier, strengthen the quantum limit effect of early barrier; 4) be that ohmic contact and Schottky barrier are constructed optimization barrier structure separately, reduce grid current and ohmic contact resistance, make high performance N face field effect transistor.
Description of drawings
Accompanying drawing is the material structure figure of nitrogen face polar AlN of the present invention/AlInN composite back barrier gallium nitride field effect transistor.
Embodiment
Below in conjunction with drawings and Examples the present invention is done further explanation.
As shown in drawings, the nitrogen face polar GaN resilient coating 2 of growing successively on substrate 1, AlInN modulate-doped layer 3, delta doping layer 4, AlInN back of the body potential barrier separator 5 and AlN back of the body potential barrier separator 6 constitute the AlN/AlInN composite back barrier; Growing GaN channel layer 7 and AlGaN early barrier layer 8 on composite back barrier again.The thickness of optimal design AlInN modulate-doped layer 3 is realized thick back of the body potential barrier and high-intensity modulation doping; The modulation doping of δ doping intensity in the optimal design delta doping layer 4 and AlInN back of the body potential barrier produces highdensity two-dimensional electron gas; The thickness of optimal design AlInN back of the body potential barrier separator 5 and AlN back of the body potential barrier separator 6 makes channel electrons gas away from the ionized impurity center, lattice strain and defective that ionized impurity scattering that reduction channel electrons gas is stood and lattice mismatch AlN layer cause; The Al component of the thickness of optimal design GaN channel layer 7 and AlGaN early barrier layer 8 than and thickness strengthen quantum limit and the Schottky barrier and the ohm contact performance of raceway groove trap early barrier, reach the mutual conductance and the pinch-off voltage of design.
In device fabrication processes, cut out the source, leak the AlGaN early barrier layer 8 on the ohmic contact with photoetching and etching technics earlier, directly on GaN channel layer 7, make ohmic contact, utilize the low potential barrier of GaN and the Ohmic electrode metal of shortening and the spacing between electron gas to increase tunnelling current, reduce ohmic contact resistance.Then, on AlGaN early barrier layer 8, make Schottky barrier again.Utilize the high potential barrier of AlGaN to reduce grid current, the quantum limit of reinforcement raceway groove trap and gate electrode prevent that to the regulation and control of channel conduction channel electrons is tunneling to surface state and causes current collapse.Finally make the high-quality nitrogen face polar AlN/AlInN composite back barrier gallium nitride field effect transistor of back of the body potential barrier with Gao Erhou.
Embodiment 1:
Growth nitrogen face polar GaN resilient coating 2 on substrate 1, on this N face GaN resilient coating 2 growth 10nm thick with the Al GaN lattice match
0.83In
0.17N modulate-doped layer 3, doping content are 1*10
19Cm
-3Grow doping concentration is 1.5*10 thereon again
13Cm
-2The thick Al that undopes of delta doping layer 4,4nm
0.83In
0.17N back of the body potential barrier separator 5 and the thick AlN separator 6 that undopes of 2nm constitute the AlN/AlInN composite back barrier.10nm thick undope GaN channel layer 7 and the thick Al that undopes of 10nm again grows on composite back barrier
0.3Ga
0.7N early barrier layer 8.Find the solution Schrodinger equation and Poisson's equation is calculated to such an extent that the channel electrons air tightness is 13.297 * 10 from being in harmony
12Cm
-2, pinch-off voltage is-5V.Cut out after the early barrier layer 8, gate electrode to the distance of channel electrons gas less than 10nm, make low resistance source easily, leak Ohmic electrode.
Embodiment 2:
On N face GaN resilient coating 2 growth 20nm thick with the Al GaN lattice match
0.83In
0.17N modulate-doped layer 3, doping content are 6*10
18Cm
-3Grow doping concentration is 1*10 thereon again
13Cm
-2The thick Al that undopes of delta doping layer 4,4nm
0.83In
0.17N back of the body potential barrier separator 5 and the thick AlN separator 6 that undopes of 2nm constitute the AlN/AlInN composite back barrier.10nm thick undope GaN channel layer 7 and the thick Al that undopes of 10nm again grows on composite back barrier
0.3Ga
0.7N early barrier layer 8.Find the solution Schrodinger equation and Poisson's equation is calculated to such an extent that the channel electrons air tightness is 11.045 * 10 from being in harmony
12Cm
-2, pinch-off voltage is-4.1V.Cut out after the early barrier layer 8, gate electrode to the distance of channel electrons gas less than 10nm, make low resistance source easily, leak Ohmic electrode.
Embodiment 3:
The nitrogen face polar GaN resilient coating 2 of on substrate 1, growing successively, on this N face GaN resilient coating 2 growth 40nm thick with the Al GaN lattice match
0.83In
0.17N modulate-doped layer 3, doping content are 4*10
18Cm
-3Grow doping concentration is 7*10 thereon again
12Cm
-2The thick Al that undopes of delta doping layer 4,4nm
0.83In
0.17N back of the body potential barrier separator 5 and the thick AlN separator 6 that undopes of 2nm constitute the AlN/AlInN composite back barrier.10nm thick undope GaN channel layer 7 and the thick Al that undopes of 10nm again grows on composite back barrier
0.3Ga
0.7N early barrier layer 8.Find the solution Schrodinger equation and Poisson's equation is calculated to such an extent that the channel electrons air tightness is 13.017 * 10 from being in harmony
12Cm
-2, pinch-off voltage is-4.9V.Cut out after the early barrier layer 8, gate electrode to the distance of channel electrons gas less than 10nm, make low resistance source easily, leak Ohmic electrode.
Embodiment 4:
The nitrogen face polar GaN resilient coating 2 of on substrate 1, growing successively, on this N face GaN resilient coating 2 growth 35nm thick with the Al GaN lattice match
0.83In
0.17N modulate-doped layer 3, doping content are 4*10
18Cm
-3Grow doping concentration is 1*10 thereon again
13Cm
-2The thick Al that undopes of delta doping layer 4,4nm
0.83In
0.17N back of the body potential barrier separator 5 and the thick AlN separator 6 that undopes of 2nm constitute the AlN/AlInN composite back barrier.10nm thick undope GaN channel layer 7 and the thick Al that undopes of 8nm again grows on composite back barrier
0.3Ga
0.7N early barrier layer 8.Find the solution Schrodinger equation and Poisson's equation is calculated to such an extent that the channel electrons air tightness is 13.847 * 10 from being in harmony
12Cm
-2, pinch-off voltage is-4.6V.Cut out after the early barrier layer 8, gate electrode to the distance of channel electrons gas less than 10nm, make low resistance source easily, leak Ohmic electrode.
Embodiment 5:
The nitrogen face polar GaN resilient coating 2 of on substrate 1, growing successively, on this N face GaN resilient coating 2 growth 25nm thick with the Al GaN lattice match
0.83In
0.17N modulate-doped layer 3, doping content are 6*10
18Cm
3Grow doping concentration is 1.4*10 thereon again
13Cm
-2The thick Al that undopes of delta doping layer 4,4nm
0.83In
0.17N back of the body potential barrier separator 5 and the thick AlN separator 6 that undopes of 2nm constitute the AlN/AlInN composite back barrier.8nm thick undope GaN channel layer 7 and the thick Al that undopes of 8nm again grows on composite back barrier
0.3Ga
0.7N early barrier layer 8.Find the solution Schrodinger equation and Poisson's equation is calculated to such an extent that the channel electrons air tightness is 16.331 * 10 from being in harmony
12Cm
-2, pinch-off voltage is-4.9V.Cut out after the early barrier layer 8, gate electrode to the distance of channel electrons gas less than 8nm, make low resistance source easily, leak Ohmic electrode.
The above only is a preferred implementation of the present invention; be noted that for those skilled in the art; under the prerequisite that does not break away from the principle of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (3)
1. method of making nitrogen face polar AlN/AlInN composite back barrier gallium nitride field effect transistor is characterized in that may further comprise the steps:
1) on substrate (1), grow successively nitrogen face polar GaN resilient coating (2) and with the AlInN modulate-doped layer (3) of GaN lattice match;
2) on AlInN modulate-doped layer (3), grow successively delta doping layer (4), AlInN back of the body potential barrier separator (5) and AlN back of the body potential barrier separator (6), formation AlN/AlInN composite back barrier;
3) growing GaN channel layer (7) and AlGaN early barrier layer (8) on the AlN/AlInN composite back barrier;
4) corrode behind the AlGaN early barrier layer (8) with dry process and directly go up the making source, leak ohmic contact at GaN channel layer (7);
5) go up the making Schottky barrier at AlGaN early barrier layer (8), the quantum limit with strengthening AlGaN early barrier layer (8) with cut-out method improves schottky barrier height and width and reduces grid current, the linear characteristic of raising mutual conductance and device work.
2. the method for a kind of manufacturing nitrogen face polar AlN according to claim 1/AlInN composite back barrier gallium nitride field effect transistor, it is characterized in that: the thickness of described AlInN modulate-doped layer (3) is 10～40nm.
3. the method for a kind of manufacturing nitrogen face polar AlN according to claim 1/AlInN composite back barrier gallium nitride field effect transistor is characterized in that: the thickness of described AlInN back of the body potential barrier separator (5) is 4nm.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102664188A (en) * | 2012-05-10 | 2012-09-12 | 电子科技大学 | Gallium nitride-based high-electron-mobility transistor with composite buffering layer |
| CN102737991A (en) * | 2012-06-01 | 2012-10-17 | 中国电子科技集团公司第五十五研究所 | Method for producing composite back potential energy barrier gallium nitride heterojunction field effect tube |
| CN114373804A (en) * | 2021-12-14 | 2022-04-19 | 华为技术有限公司 | Pseudomorphic high mobility transistors, low noise amplifiers, and related devices |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5698868A (en) * | 1986-07-03 | 1997-12-16 | Fujitsu Limited | High-speed heterojunction transistor |
| US20030151042A1 (en) * | 2002-02-08 | 2003-08-14 | Hueschen Mark R. | Polarization field enhanced tunnel structures |
| CN1797787A (en) * | 2004-12-30 | 2006-07-05 | 中国科学院半导体研究所 | Structure for improving Schottky performance of grid electrode of gallium nitride based transistor in high electron mobility |
-
2010
- 2010-03-04 CN CN2010101186194A patent/CN101814434B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5698868A (en) * | 1986-07-03 | 1997-12-16 | Fujitsu Limited | High-speed heterojunction transistor |
| US20030151042A1 (en) * | 2002-02-08 | 2003-08-14 | Hueschen Mark R. | Polarization field enhanced tunnel structures |
| CN1797787A (en) * | 2004-12-30 | 2006-07-05 | 中国科学院半导体研究所 | Structure for improving Schottky performance of grid electrode of gallium nitride based transistor in high electron mobility |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102664188A (en) * | 2012-05-10 | 2012-09-12 | 电子科技大学 | Gallium nitride-based high-electron-mobility transistor with composite buffering layer |
| CN102737991A (en) * | 2012-06-01 | 2012-10-17 | 中国电子科技集团公司第五十五研究所 | Method for producing composite back potential energy barrier gallium nitride heterojunction field effect tube |
| CN114373804A (en) * | 2021-12-14 | 2022-04-19 | 华为技术有限公司 | Pseudomorphic high mobility transistors, low noise amplifiers, and related devices |
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