CN101808263A - Silicon capacitor microphone and method for manufacturing same - Google Patents
Silicon capacitor microphone and method for manufacturing same Download PDFInfo
- Publication number
- CN101808263A CN101808263A CN201010144913A CN201010144913A CN101808263A CN 101808263 A CN101808263 A CN 101808263A CN 201010144913 A CN201010144913 A CN 201010144913A CN 201010144913 A CN201010144913 A CN 201010144913A CN 101808263 A CN101808263 A CN 101808263A
- Authority
- CN
- China
- Prior art keywords
- vibrating diaphragm
- backboard
- pad
- supporting layer
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
Abstract
The invention provides a silicon capacitor microphone which comprises a substrate, a supporting layer connected with the substrate, a vibration film, a vibration film electrode connected with the vibration film, a vibration film bonding pad communicated with the vibration film electrode, a backboard, a backboard electrode connected with the backboard, and a backboard bonding pad electrically communicated with the backboard. The vibration film and the backboard are oppositely arranged by the supporting layer which comprises a first supporting layer and a second supporting layer mutually independent and disconnected, and the vibration film bonding pad and the backboard bonding pad are respectively arranged on the first supporting layer and the second supporting layer. The invention can decrease the parasitic capacitance and improve the insulation resistance.
Description
Technical field
The present invention relates to the method for a kind of silicon capacitor microphone and manufacturing silicon capacitor microphone.
Background technology
Development along with wireless telecommunications, Global Mobile Phone Users is more and more, the user not only is satisfied with conversation to the requirement of mobile phone, and want high-quality communication effect can be provided, especially at present the development of mobile multimedia technology, the speech quality of mobile phone becomes more important, and the microphone of mobile phone is as the voice pick device of mobile phone, and its design quality directly influences speech quality.
And the microphone of using more and better performances at present is microelectromechanical-systems microphone (Micro-Electro-Mechanical-System Microphone, be called for short MEMS), in the correlation technique, because the electrode of vibrating diaphragm and the electrode of backboard all are arranged on the same backboard, and this backboard is a unseparated integral body.Like this, if backboard resistance is lower, back plate electrode and vibrating diaphragm electrode conduction perhaps may be produced bigger parasitic capacitance, thereby reduce microphone property, even microphone was lost efficacy.Thereby be necessary to provide a kind of novel silicon capacitor microphone.
Summary of the invention
The technical problem that the present invention need solve provides and a kind ofly can reduce parasitic capacitance, the silicon capacitor microphone of bigger insulation resistance is provided and makes the method for silicon capacitor microphone.
According to the above-mentioned technical problem that needs solution, designed a kind of silicon capacitor microphone, it comprise substrate, the supporting layer that links to each other with substrate, vibrating diaphragm, the vibrating diaphragm electrode that links to each other with vibrating diaphragm, with the logical vibrating diaphragm pad of vibrating diaphragm electrode conductance, backboard, the back plate electrode that links to each other with backboard, and the backboard pad that conducts of back plate electrode, wherein vibrating diaphragm and backboard are oppositely arranged by supporting layer, supporting layer comprises separate, discrete first supporting layer and second supporting layer, vibrating diaphragm pad and backboard pad are separately positioned on first supporting layer, second supporting layer.
Preferably, described vibrating diaphragm is arranged between supporting layer and the substrate, and backboard is arranged on the supporting layer, and the backboard pad is arranged on first supporting layer, and the vibrating diaphragm electrode conducts by conductive hole and vibrating diaphragm pad and the vibrating diaphragm pad is arranged on second supporting layer.
Preferably, described backboard is arranged between supporting layer and the substrate, and vibrating diaphragm is arranged on the supporting layer, and the vibrating diaphragm pad is arranged on first supporting layer, and back plate electrode conducts by conductive hole and backboard pad, and the backboard pad is arranged on second supporting layer.
The present invention has also designed a kind of silicon capacitor microphone, comprise substrate, be arranged on suprabasil vibrating diaphragm, the vibrating diaphragm electrode that links to each other with vibrating diaphragm, the vibrating diaphragm pad logical with the vibrating diaphragm electrode conductance, be provided with the back-up block of breach, the backboard that is oppositely arranged by back-up block with vibrating diaphragm, the back plate electrode that links to each other with backboard, the backboard pad that conducts with back plate electrode, this silicon capacitor microphone also comprises the cushion block that is used to place the vibrating diaphragm pad, this cushion block is provided with conductive hole, and this conductive hole links to each other with the vibrating diaphragm electrode, described vibrating diaphragm electrode is electrically connected with the vibrating diaphragm pad by conductive hole, and cushion block and back-up block are separate, do not connect mutually.
Preferably, described cushion block is arranged on the indentation, there of back-up block, and this back-up block is arranged on a surface of vibrating diaphragm.
The present invention has also designed a kind of silicon capacitor microphone, comprise substrate, be arranged on suprabasil backboard, the back plate electrode that links to each other with backboard, the backboard pad that conducts with back plate electrode, be provided with the back-up block of breach, the vibrating diaphragm that is oppositely arranged by back-up block with backboard, the vibrating diaphragm electrode that links to each other with vibrating diaphragm, the vibrating diaphragm pad logical with the vibrating diaphragm electrode conductance, this silicon capacitor microphone also comprises the cushion block that is used to place the backboard pad, this cushion block is provided with conductive hole, and this conductive hole links to each other with back plate electrode, described back plate electrode is electrically connected with the backboard pad by conductive hole, and cushion block and back-up block are separate, do not connect mutually.
Preferably, described cushion block is arranged on the indentation, there of back-up block, and this back-up block is arranged on a surface of backboard.
The present invention also provides a kind of method of making silicon capacitor microphone, and this method comprises the steps:
Step 1: substrate, supporting layer, vibrating diaphragm, vibrating diaphragm electrode, vibrating diaphragm pad, backboard, back plate electrode, backboard pad are provided;
Step 2: vibrating diaphragm is placed between supporting layer and the substrate, backboard and vibrating diaphragm are oppositely arranged by supporting layer, the vibrating diaphragm electrode links to each other with vibrating diaphragm and conducts with the vibrating diaphragm pad, and back plate electrode links to each other with backboard and conducts with the backboard pad, and vibrating diaphragm pad and backboard pad are separately positioned on the supporting layer;
Step 3: supporting layer is cut into two independently discrete parts, make vibrating diaphragm pad and backboard pad lay respectively at two independently discrete parts.
The present invention also provides a kind of method of making silicon capacitor microphone, and this method comprises the steps:
Step 1: substrate, supporting layer, vibrating diaphragm, vibrating diaphragm electrode, vibrating diaphragm pad, backboard, back plate electrode, backboard pad are provided;
Step 2: backboard is placed between supporting layer and the substrate, vibrating diaphragm and backboard are oppositely arranged by supporting layer, the vibrating diaphragm electrode links to each other with vibrating diaphragm and conducts with the vibrating diaphragm pad, and back plate electrode links to each other with backboard and conducts with the backboard pad, and vibrating diaphragm pad and backboard pad are separately positioned on the supporting layer;
Step 3: supporting layer is cut into two independently discrete parts, and vibrating diaphragm pad and backboard pad lay respectively at these two independently discrete parts.
Beneficial effect of the present invention is: because backboard pad and vibrating diaphragm pad lay respectively at two separate discrete parts, the two can conducting, so can obtain enough insulation resistances, reduce parasitic capacitance, prevent that effectively silicon capacitor microphone lost efficacy or performance reduces.
Description of drawings
Fig. 1 is the stereogram of an embodiment of silicon capacitor microphone provided by the invention;
Fig. 2 is the cutaway view of an embodiment of silicon capacitor microphone provided by the invention;
Fig. 3 is the three-dimensional exploded view of an embodiment of silicon capacitor microphone provided by the invention;
Fig. 4 is the stereogram of second embodiment of silicon capacitor microphone provided by the invention;
Fig. 5 is the cutaway view of second embodiment of silicon capacitor microphone provided by the invention;
Fig. 6 is the three-dimensional exploded view of second embodiment of silicon capacitor microphone provided by the invention.
Embodiment
The invention will be further described below in conjunction with drawings and embodiments.
Silicon capacitor microphone provided by the invention is mainly used in the electronic equipments such as mobile phone, is used to receive sound.Vibrating diaphragm is used for this silicon capacitor microphone.
First embodiment provided by the invention, referring to Fig. 1-3, silicon capacitor microphone 1, it comprises substrate 11, the supporting layer 12 that links to each other with substrate 11, vibrating diaphragm 14, the vibrating diaphragm electrode 141 that links to each other with vibrating diaphragm 14, the vibrating diaphragm pad 142 that conducts with vibrating diaphragm electrode 141, backboard 13, the back plate electrode 131 that links to each other with backboard 13, the backboard pad 132 that conducts with back plate electrode 131, wherein vibrating diaphragm 14 is oppositely arranged by supporting layer 12 with backboard 13, supporting layer 12 comprises separate, discrete first supporting layer 121 and second supporting layer 122, vibrating diaphragm pad 142 is separately positioned on first supporting layer 121 with backboard pad 132, on second supporting layer 122.Be separated into independent parts by slit 15 between first supporting layer 121 and second supporting layer 122.
As can see from Figure 2, vibrating diaphragm 14 is between backboard 13 and substrate 11.Referring to Fig. 1-3, backboard 13 is arranged on the supporting layer 12, and backboard pad 131 is arranged on first supporting layer 121, and vibrating diaphragm electrode 142 (referring to Fig. 3) conducts by conductive hole 16 and vibrating diaphragm pad 142 and vibrating diaphragm pad 142 is arranged on second supporting layer 122.
Certainly, backboard 13 also can be between vibrating diaphragm 14 and substrate 11 (not shown).That is to say that the position of vibrating diaphragm 14 and backboard 13 can exchange.Vibrating diaphragm 14 is arranged on the supporting layer 12, and vibrating diaphragm pad 142 is arranged on first supporting layer 121, and back plate electrode 131 conducts by conductive hole 16 and backboard pad 132, and backboard pad 132 is arranged on second supporting layer 122.Be separated into independent parts by slit 15 between first supporting layer 121 and second supporting layer 122.
In second embodiment provided by the invention, referring to Fig. 4-6, silicon capacitor microphone 1a provided by the invention, comprise substrate 11a, be arranged on the vibrating diaphragm 14a on the substrate 11a, the vibrating diaphragm electrode 141a that links to each other with vibrating diaphragm 14a, the vibrating diaphragm pad 142a that conducts with vibrating diaphragm electrode 141a, be provided with the back-up block 121a of breach 17a, the backboard 13a that is oppositely arranged by back-up block 121a with vibrating diaphragm 14a, the back plate electrode 131a that links to each other with backboard 131a, the backboard pad 132a that conducts with back plate electrode 131a, this silicon capacitor microphone 1a also comprises the cushion block 122a that is used to place vibrating diaphragm pad 142a, this cushion block 122a is provided with conductive hole 16a, and this conductive hole 16a links to each other with vibrating diaphragm electrode 141a, described vibrating diaphragm electrode 141a is electrically connected with vibrating diaphragm pad 142a by conductive hole 16a, and cushion block 122a and back-up block 121a are separate, do not connect mutually.
Cushion block 122a is arranged on the breach 17a place of back-up block 121a, and this back-up block 17a is arranged on the surface of vibrating diaphragm 14a.
Certainly, be among the embodiment at second, backboard 13a also can be between vibrating diaphragm 14a and substrate 11a (not shown).That is to say that the position of vibrating diaphragm 14a and backboard 13a can exchange.In this structure, vibrating diaphragm pad 142a is placed on back-up block 121a, the cushion block 122a of this silicon capacitor microphone 1a is used to place backboard pad 132a, this cushion block 122a is provided with conductive hole 16a, and this conductive hole 16a links to each other with back plate electrode 131a, back plate electrode 131a is electrically connected with backboard pad 132a by conductive hole 16a, and cushion block 122a is separate with back-up block 121a, be not connected mutually.Cushion block 122a is arranged on the breach 17a place of back-up block 121a, and this back-up block 17a is arranged on the surface of backboard 13a.
For obtaining above-described silicon capacitor microphone, the present invention also provides a kind of method of making silicon microphone.Referring to Fig. 1-3, method provided by the invention comprises the steps:
Step 1: substrate 11, supporting layer 12, vibrating diaphragm 14, vibrating diaphragm electrode 141, vibrating diaphragm pad 142, backboard 13, back plate electrode 131, backboard pad 132 are provided;
Step 2: vibrating diaphragm 14 is placed between supporting layer 12 and the substrate 11, backboard 13 is oppositely arranged by supporting layer 12 with vibrating diaphragm 14, vibrating diaphragm electrode 141 links to each other with vibrating diaphragm 14 and conducts with vibrating diaphragm pad 142, back plate electrode 131 links to each other with backboard 13 and conducts with backboard pad 132, and vibrating diaphragm pad 142 is separately positioned on the supporting layer 12 with backboard pad 132;
Step 3: supporting layer 12 is cut into two independently discrete parts 121,122, make vibrating diaphragm pad 142 and backboard pad 132 lay respectively at two independently discrete parts 121,122.
Certainly, this method also can be placed on backboard 13 between vibrating diaphragm 14 and the substrate 11, and other steps are constant.
Above-described only is plurality of embodiments of the present invention, should be pointed out that for the person of ordinary skill of the art at this, under the prerequisite that does not break away from the invention design, can also make improvement, but these all belongs to protection scope of the present invention.
Claims (9)
1. silicon capacitor microphone, it comprise substrate, the supporting layer that links to each other with substrate, vibrating diaphragm, the vibrating diaphragm electrode that links to each other with vibrating diaphragm, with the logical vibrating diaphragm pad of vibrating diaphragm electrode conductance, backboard, the back plate electrode that links to each other with backboard, and the backboard pad that conducts of back plate electrode, wherein vibrating diaphragm and backboard are oppositely arranged by supporting layer, it is characterized in that: supporting layer comprises separate, discrete first supporting layer and second supporting layer, and vibrating diaphragm pad and backboard pad are separately positioned on first supporting layer, second supporting layer.
2. silicon capacitor microphone according to claim 1, it is characterized in that: described vibrating diaphragm is arranged between supporting layer and the substrate, backboard is arranged on the supporting layer, the backboard pad is arranged on first supporting layer, and the vibrating diaphragm electrode conducts by conductive hole and vibrating diaphragm pad and the vibrating diaphragm pad is arranged on second supporting layer.
3. silicon capacitor microphone according to claim 1, it is characterized in that: described backboard is arranged between supporting layer and the substrate, vibrating diaphragm is arranged on the supporting layer, the vibrating diaphragm pad is arranged on first supporting layer, back plate electrode conducts by conductive hole and backboard pad, and the backboard pad is arranged on second supporting layer.
4. silicon capacitor microphone, comprise substrate, be arranged on suprabasil vibrating diaphragm, the vibrating diaphragm electrode that links to each other with vibrating diaphragm, the vibrating diaphragm pad logical with the vibrating diaphragm electrode conductance, be provided with the back-up block of breach, the backboard that is oppositely arranged by back-up block with vibrating diaphragm, the back plate electrode that links to each other with backboard, the backboard pad that conducts with back plate electrode, it is characterized in that: this silicon capacitor microphone also comprises the cushion block that is used to place the vibrating diaphragm pad, this cushion block is provided with conductive hole, and this conductive hole links to each other with the vibrating diaphragm electrode, described vibrating diaphragm electrode is electrically connected with the vibrating diaphragm pad by conductive hole, and cushion block and back-up block are separate, do not connect mutually.
5. silicon capacitor microphone according to claim 4 is characterized in that: described cushion block is arranged on the indentation, there of back-up block, and this back-up block is arranged on a surface of vibrating diaphragm.
6. silicon capacitor microphone, comprise substrate, be arranged on suprabasil backboard, the back plate electrode that links to each other with backboard, the backboard pad that conducts with back plate electrode, be provided with the back-up block of breach, the vibrating diaphragm that is oppositely arranged by back-up block with backboard, the vibrating diaphragm electrode that links to each other with vibrating diaphragm, the vibrating diaphragm pad logical with the vibrating diaphragm electrode conductance, it is characterized in that: this silicon capacitor microphone also comprises the cushion block that is used to place the backboard pad, this cushion block is provided with conductive hole, and this conductive hole links to each other with back plate electrode, described back plate electrode is electrically connected with the backboard pad by conductive hole, and cushion block and back-up block are separate, do not connect mutually.
7. silicon capacitor microphone according to claim 6 is characterized in that: described cushion block is arranged on the indentation, there of back-up block, and this back-up block is arranged on a surface of backboard.
8. method of making silicon capacitor microphone, it is characterized in that: this method comprises the steps:
Step 1: substrate, supporting layer, vibrating diaphragm, vibrating diaphragm electrode, vibrating diaphragm pad, backboard, back plate electrode, backboard pad are provided;
Step 2: vibrating diaphragm is placed between supporting layer and the substrate, backboard and vibrating diaphragm are oppositely arranged by supporting layer, the vibrating diaphragm electrode links to each other with vibrating diaphragm and conducts with the vibrating diaphragm pad, and back plate electrode links to each other with backboard and conducts with the backboard pad, and vibrating diaphragm pad and backboard pad are separately positioned on the supporting layer;
Step 3: supporting layer is cut into two independently discrete parts, make vibrating diaphragm pad and backboard pad lay respectively at two independently discrete parts.
9. method of making silicon capacitor microphone, it is characterized in that: this method comprises the steps:
Step 1: substrate, supporting layer, vibrating diaphragm, vibrating diaphragm electrode, vibrating diaphragm pad, backboard, back plate electrode, backboard pad are provided;
Step 2: backboard is placed between supporting layer and the substrate, vibrating diaphragm and backboard are oppositely arranged by supporting layer, the vibrating diaphragm electrode links to each other with vibrating diaphragm and conducts with the vibrating diaphragm pad, and back plate electrode links to each other with backboard and conducts with the backboard pad, and vibrating diaphragm pad and backboard pad are separately positioned on the supporting layer;
Step 3: supporting layer is cut into two independently discrete parts, and vibrating diaphragm pad and backboard pad lay respectively at these two independently discrete parts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010144913 CN101808263B (en) | 2010-04-06 | 2010-04-06 | Silicon capacitor microphone and method for manufacturing same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010144913 CN101808263B (en) | 2010-04-06 | 2010-04-06 | Silicon capacitor microphone and method for manufacturing same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101808263A true CN101808263A (en) | 2010-08-18 |
| CN101808263B CN101808263B (en) | 2013-04-24 |
Family
ID=42609848
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010144913 Expired - Fee Related CN101808263B (en) | 2010-04-06 | 2010-04-06 | Silicon capacitor microphone and method for manufacturing same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101808263B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102196352A (en) * | 2011-05-19 | 2011-09-21 | 瑞声声学科技(深圳)有限公司 | Manufacturing method of silicon microphone |
| CN102611975A (en) * | 2012-01-20 | 2012-07-25 | 缪建民 | MEMS silicon microphone employing eutectic bonding and SOI silicon slice and method for producing the same |
| CN112672243A (en) * | 2020-12-29 | 2021-04-16 | 瑞声声学科技(深圳)有限公司 | Microphone and method for manufacturing the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004200766A (en) * | 2002-12-16 | 2004-07-15 | Karaku Denshi Kofun Yugenkoshi | Capacitor microphone and its manufacturing method |
| CN101448193A (en) * | 2008-11-07 | 2009-06-03 | 瑞声声学科技(深圳)有限公司 | Capacitive microphone |
| CN201290179Y (en) * | 2008-11-07 | 2009-08-12 | 瑞声声学科技(深圳)有限公司 | Microphone |
-
2010
- 2010-04-06 CN CN 201010144913 patent/CN101808263B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004200766A (en) * | 2002-12-16 | 2004-07-15 | Karaku Denshi Kofun Yugenkoshi | Capacitor microphone and its manufacturing method |
| CN101448193A (en) * | 2008-11-07 | 2009-06-03 | 瑞声声学科技(深圳)有限公司 | Capacitive microphone |
| CN201290179Y (en) * | 2008-11-07 | 2009-08-12 | 瑞声声学科技(深圳)有限公司 | Microphone |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102196352A (en) * | 2011-05-19 | 2011-09-21 | 瑞声声学科技(深圳)有限公司 | Manufacturing method of silicon microphone |
| CN102611975A (en) * | 2012-01-20 | 2012-07-25 | 缪建民 | MEMS silicon microphone employing eutectic bonding and SOI silicon slice and method for producing the same |
| CN102611975B (en) * | 2012-01-20 | 2014-04-23 | 缪建民 | MEMS silicon microphone employing eutectic bonding and SOI silicon slice and method for producing the same |
| CN112672243A (en) * | 2020-12-29 | 2021-04-16 | 瑞声声学科技(深圳)有限公司 | Microphone and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101808263B (en) | 2013-04-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN201438743U (en) | microphone | |
| CN101267463B (en) | Portable terminal | |
| JP4683635B2 (en) | Receiver | |
| CN101883307B (en) | Capacitor MEMS (Micro-Electro-Mechanical System) microphone diaphragm | |
| EP1991028A1 (en) | Glasses type sound/communication device | |
| CN101568057A (en) | Capacitance microphone | |
| CN101651917A (en) | Capacitance microphone | |
| EP1931173A3 (en) | Condenser microphone having flexure hinge diaphragm and method of manufacturing the same | |
| EP2979466A1 (en) | Mems apparatus with increased back volume | |
| CN101321413B (en) | Condenser type microphone | |
| CN101808263B (en) | Silicon capacitor microphone and method for manufacturing same | |
| CN103167364A (en) | Multi-functional microphone assembly and method of manufacturing the same | |
| CN201467442U (en) | Capacitor microphone | |
| CN201426176Y (en) | Silicon capacitance microphone | |
| CN101883306B (en) | Diaphragm and capacitance microphone comprising diaphragm | |
| US20110150263A1 (en) | Speaker assembly | |
| CN103139676A (en) | Microphone assembly having ear set function and method of manufacturing the same | |
| CN202587368U (en) | Micro machine system microphone | |
| CN201403199Y (en) | MEMS capacitance microphone | |
| CN101808262A (en) | Capacitance microphone | |
| CN102014332A (en) | Capacitance MEMS (micro-electro-mechanical system) microphone | |
| CN101959103B (en) | Vibrating diaphragm and the mike including this vibrating diaphragm | |
| CN202310061U (en) | FPC (Flexible Printed Circuit) connecting type MEMS (Micro-Electro-Mechanical-System) microphone | |
| CN101651918A (en) | Capacitance type microphone | |
| CN201226594Y (en) | Silicon-based capacitance microphone |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130424 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |