CN101807660A - Chip for flip type opto-electronic device - Google Patents
Chip for flip type opto-electronic device Download PDFInfo
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- CN101807660A CN101807660A CN201010146083A CN201010146083A CN101807660A CN 101807660 A CN101807660 A CN 101807660A CN 201010146083 A CN201010146083 A CN 201010146083A CN 201010146083 A CN201010146083 A CN 201010146083A CN 101807660 A CN101807660 A CN 101807660A
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Abstract
The invention discloses a novel chip for a flip type opto-electronic device, which belongs to the opto-electronic field of semiconductors. The novel chip is characterized by being in a shape of polygon with more than three edges; a pressure welding area of a first electrode is arranged in the position of at least one vertex angle on the chip, a pressure welding area of a second electrode is arranged in the active area of the chip outside the vertex angle of the chip, and the distance between the two electrodes is at least 100 mu m. The pressure welding areas of the chip electrodes are welded and installed with a pressure welding area of a transfer base plate by common placement equipment or an experienced worker. A power supply is loaded to the electrodes of the chip by transferring electrode leading-out wires of a base plate, and the power is conducted so that light sends out of the back of the chip. The chip has the advantages that the flip alignment accuracy is greatly reduced under the condition that the effective utilization area of the chip is fully used, and thereby, the use of expensive flip welding equipment is avoided; the manufacturing cost of the device is reduced; and the productivity is improved.
Description
Technical field
The present invention relates to a kind of structure of semiconductor device, relate in particular to a kind of chip structure that promotes high power semi-conductor photoelectric device thermal reliability.
Background technology
Photoelectric device is meant the class device that luminous energy and electric energy are changed mutually.Its kind is numerous, as: light-emitting diode (LED), solar cell, photodetector, laser (LD) or the like.Wherein LED is the most widely used a kind of photoelectric device in the daily life.In recent years, along with the continuous maturation of gallium nitride base blue light, green glow and ultraviolet leds technology, luminous efficiency improves constantly, and the LED using value more and more comes into one's own.LED has numerous advantages as a kind of light source, and outstanding behaviours exists: luminous efficacy height (newest research results has realized white light 160lm/W, has surpassed incandescent lamp and fluorescent lamp, therefore aspect energy-conservation excellent performance is arranged); Optical wavelength range is narrow, and the full degree of color is high; Volume is little, in light weight, point-source of light, and practical application is flexible; LED based on gallium nitride is nontoxic, nuisanceless, belongs to the environmental protection light source.Therefore, LED has huge using value at lighting field.
At present, LED has entered markets such as large scale display, decorative lighting, architectural lighting, traffic indication, LCD be backlight in a large number, bigger market is general lighting, and LED also fails to squeeze into this huge market, and this is because the requirement that present LED can't satisfy general lighting causes.General lighting needs cheapness, high-power LED product, and that is that all right is ripe, the great power LED manufacturing cost is also very expensive for present great power LED technology.
The approach that promotes the great power LED performance mainly contains two aspects: 1) improve the external quantum efficiency of LED device, to improve the amount of light of chip unit are; 2) strengthen area of chip, improve the bright dipping total amount of single chips.The research of LED at present substantially all concentrates on the external quantum efficiency that improves the LED device, to aspects such as encapsulation a lot of improved technical measures have been proposed from extension, chip technology, as: graphic sapphire substrate technology, the non-polarized long technology of looking unfamiliar, gallium nitride self-supporting substrate technology, chip surface alligatoring and nano graph technology, film LED chip technology, flip LED technology or the like.These The Application of Technology can effectively improve the amount of light of led chip unit are, help making the great power LED device.Wherein flip LED technology (as shown in Figure 1) can be improved great power LED cooling effectively, increases total light output by adding reflecting electrode, thereby the performance of boost device greatly, is extensively paid close attention in numerous great power LED technology.There is following problem in existing flip LED technology: 1. needs use expensive flip chip bonding equipment; 2. technical matters complexity; 3. rate of finished products control is difficult; 4. cost height.Therefore, can be also few the situation that this technology input actual product is used.From first key issue wherein, why use these expensive flip chip bonding equipment be because, these equipment can provide very high alignment precision (several micron～tens microns), the spacing (d among Fig. 1) that can guarantee pressure welding area is as far as possible little, thereby can more effectively utilize chip area.
If the spacing in two kinds of electrode pressure welding districts of flip LED is increased to hundreds of micron above (as shown in Figure 2), so artificial or common chip mounter just can be realized alignment function, so just avoided using expensive flip chip bonding equipment, thereby the effect that play and save cost, increases production capacity, but the problem that also has the chip effective rate of utilization, be area proportion (η) in chip of chip active area (luminous zone in the LED device), be restricted.With GaN base LED is example, according to shown in Figure 2, can obtain η=(L-d-dn)/L by analyzing, and wherein d is the spacing in two kinds of electrode pressure welding districts, and dn is the length in N electrode pressure welding district, and L is the total length of chip.Suppose that the alignment precision that artificial or common chip mounter allows is 300 μ m, the minimum value of corresponding d just should be 300 μ m, the value of supposing the total length of dn and chip simultaneously is respectively 100 μ m and 1mm, and chip active area proportion η in chip has only 60% at most so.And other parameter constant, when L was increased to 2mm, η had only 80% at most.The spacing that is to say two kinds of electrode pressure welding districts of simple increase can reduce chip and effectively utilize area, increases manufacturing cost.The cost of this part increase can weaken the advantage that cost brought of using expensive flip chip bonding equipment to save because of avoiding.Though can continue to enlarge the length L of chip, the increase of chip area also can make rate of finished products be affected, and manufacturing cost is increased.
Summary of the invention
In view of above-mentioned existing chip for flip type opto-electronic device structure is effectively utilized problems such as area is less at be welded difficulty and chip, purpose of the present invention aims to provide a kind of novel chip for flip type opto-electronic device, improves the thermal reliability of high power semi-conductor photoelectric device with cheap cost.
Purpose of the present invention will be achieved through the following technical solutions:
Chip for flip type opto-electronic device, various electrodes are installed on the transfer base substrate by corresponding bonding or pressure welding, it is characterized in that: described chip be shaped as the above polygon in three limits, wherein the pressure welding area of first kind of electrode is located at least one drift angle place on the chip, the pressure welding area of second kind of electrode is located at the chip active area outside the chip drift angle, the spacing at least 100 μ m of two kinds of electrodes.
Further, aforesaid chip for flip type opto-electronic device, wherein any drift angle of this polygon chip is less than 180 degree; The pressure welding area of first kind of electrode is positioned at any one drift angle place of chip, any two or more drift angles place; This polygon chip is a basic configuration with triangle or quadrangle.
Further, aforesaid chip for flip type opto-electronic device, wherein the constituent material of these two kinds of electrodes comprises: homogenous material Ti, Ag, Ni, Al, Au, Pt, Sn, In, Cr, Co, ITO, Cu, Fe, ATO, W, ZnO at least, and the complex of several those materials.
Further, aforesaid chip for flip type opto-electronic device, wherein this chip has at the bottom of the epitaxial base, comprises under the epitaxial substrate, epitaxial substrate on top layer and is first kind of semi-conducting material that sandwich shape is provided with in turn, device active region or quantum well, and second kind of semi-conducting material.Wherein, at least washability comprise Si base, SiGe base, GaN base, zno-based, GaAs base, InP base, SiC base, AlAs base at the bottom of this epitaxial base.
Further, aforesaid chip for flip type opto-electronic device, wherein this transfer base substrate be the Si, thermal conductive ceramic, MCPCB of tool thermal diffusivity, with pottery, SiC, AlN, the diamond of metallic radiating layer, have the metal of insulating barrier or the composite construction of those materials, and have two kinds of electrode outlet lines and corresponding to the pressure welding area of two kinds of electrodes.
Further, aforesaid chip for flip type opto-electronic device, wherein the suitable photoelectric device of this chip comprises: LED, solid state laser, solar cell and photodetector.
Chip for flip type opto-electronic device chip for flip type opto-electronic device of the present invention, its remarkable advantage is embodied in:
This chip for flip type opto-electronic device is put in the large-power semiconductor illumination application, can obtain effectively heat radiation and luminescent properties with lower cost.
Description of drawings
Fig. 1 is the vertical structure cutaway view of prior art flip LED;
Fig. 2 is based on the structural representation that flip LED shown in Figure 1 increases the interval distance of two kinds of electrode pressure weldings;
Fig. 3 is the chip structure schematic diagram of distribution of electrodes mode one embodiment of the present invention;
Fig. 4 a～4c is the chip structure schematic diagram of another embodiment of distribution of electrodes of the present invention and evolution form thereof;
Fig. 5 is a chip structure schematic diagram embodiment illustrated in fig. 3;
Fig. 6 is the chip structure schematic diagram of Fig. 4 a illustrated embodiment;
Fig. 7 a and Fig. 7 b are respectively flip chip type and transfer base substrate the welded structure vertical view and the longitudinal profile schematic diagrames mutually of different polygonal shapes.
Embodiment
Embodiment one
For solving the problem that effectively to utilize chip area in the existing chip for flip type opto-electronic device, the present invention proposes: a kind of electrode pressure welding district of device is drawn from the top corner regions of triangle chip, and the structure (as shown in Figure 3) that draw in the chip active area in another electrode pressure welding district.Be example with GaN base LED equally, for such chip structure, by analyzing the effective rate of utilization η=1-(d+dn) that can obtain chip
2/ L
2Suppose that also d is 300 μ m; The value of the total length of dn and chip is respectively 100 μ m and 1mm, and chip effective rate of utilization η can reach 84% so.And other parameter constant, when L was increased to 2mm, η can reach 96%.Compare with the structure (structure shown in Figure 2) of simple increase pressure welding area spacing, the chip effective rate of utilization has improved greatly.
Shown in the chip for flip type opto-electronic device structural representation as shown in Figure 5: the photoelectric device chip comprises at the bottom of the epitaxial base 1 and two kind of electrode, that is: first kind of electrode 2 and second kind of electrode 3; The planar structure of chip is a triangle, and first kind of electrode 2 is positioned at least one drift angle place of triangle chip, and second kind of electrode 3 is positioned at other zone of chip; The spacing of first kind of electrode 2 and second kind of electrode 3 is enough big, reach can satisfy common sealed in unit (as: chip mounter) or experienced operator to alignment request, should＞100 μ m; First kind of male or female that electrode 2 can be a photoelectric device wherein, second kind of electrode 3 and first kind of electrode 2 are corresponding relation, if that is: first kind of electrode 2 is anode, second kind of 3 at electrode is negative electrode; If first kind of electrode 2 is negative electrode, then second kind of electrode 3 is anode.To say on the principle, the angle of any drift angle of triangle chip can be＜180 ° arbitrary value, still, from processes, the angle of the drift angle of triangle chip should meet the cleavage surface angle, can guarantee the rate of finished products of scribing processing like this.
Embodiment two
Consider the actual process process, the cutting processing of triangle chip need be prolonged three direction cuttings, and relative complex also can increase cost, loss part rate of finished products.Therefore, we have proposed further corrective measure again: chip adopts quadrilateral structure, a kind of electrode pressure welding district of device is drawn from the top corner regions of quadrangle chip, and the structure that draw in the chip active area in another electrode pressure welding district, see Fig. 4 a, be equivalent to that two triangle chips are prolonged the base and be stitched together.Such quadrangle chip structure only need prolong both direction and cut just passable in the chip cutting process.For better electricity contact is provided, can also increase pressure welding area at tetragonal other drift angle place, shown in Fig. 4 b, 4c.
The structure chart of improved chip for flip type opto-electronic device, as shown in Figure 6: the photoelectric device chip comprises at the bottom of the epitaxial base 21 and two kind of electrode, that is: first kind of electrode 22 and second kind of electrode 23; The planar structure of chip is a quadrangle, and first kind of electrode 22 is positioned at least one drift angle place of quadrangle chip, and second kind of electrode 23 is positioned at other zone of chip; The spacing of first kind of electrode 22 and second kind of electrode 23 is enough big, reach can satisfy common sealed in unit (as: chip mounter) or experienced operator to alignment request, should＞100 μ m; First kind of male or female that electrode 22 can be a photoelectric device wherein, second kind of electrode 23 and first kind of electrode 2 are corresponding relation, if that is: first kind of electrode 22 is anode, second kind of 23 at electrode is negative electrode; If first kind of electrode 22 is negative electrode, then second kind of electrode 23 is anode.To say on the principle, the angle of any drift angle of quadrangle chip can be＜180 ° arbitrary value, still, from processes, the angle of the drift angle of quadrangle chip should meet the cleavage surface angle, can guarantee the rate of finished products of scribing processing like this.
The chip structure of above-mentioned two or more embodiment, from the operation process that is welded of reality: the chip for flip type opto-electronic device shown in Fig. 7 a and Fig. 7 b is installed in the structure on the transfer base substrate.Fig. 7 a is a floor map, and Fig. 7 b is a generalized section.From shown in the figure as seen, this chip comprises: 21, the first kinds of electrodes 22 at the bottom of the epitaxial base, second kind of electrode 23 wherein 21 also comprises at the bottom of the epitaxial base: 211, the first kinds of semi-conducting materials 212 of epitaxial substrate, 213, the second kinds of semi-conducting materials 214 of device active region or quantum well.First kind of semi-conducting material 212 is N type semiconductor or P type semiconductor, and correspondingly second kind of semi-conducting material 214 is P type semiconductor or N type semiconductor.The transfer base substrate structure comprises: transfer base substrate 24, first kind of electrode outlet line 25 on the transfer base substrate, second kind of electrode outlet line 26 on the transfer base substrate, first kind of contact conductor pressure welding area 27 on the transfer base substrate, second kind of contact conductor pressure welding area 28 on the transfer base substrate.By bonding or press welding method, first kind of electrode on the chip 22 and first kind of electrode outlet line 25 on the transfer base substrate are welded together, second kind of electrode 23 on the chip and second kind of electrode outlet line 26 on the transfer base substrate are welded together.With the luminescent device is example, when on first kind of contact conductor pressure welding area 27 on the transfer base substrate and second kind of contact conductor pressure welding area 28 on the transfer base substrate, adding bias voltage, sequence of currents flows through 28,26,23,214,213, excite bright dipping at 213 places, light penetrates from the upper surface of device, promptly penetrate from 211 surfaces, electric current again sequential flow through 212,22,25,27.
Concrete enforcement example does not in sum constitute any limitation protection scope of the present invention.All employing equivalents or equivalence are replaced and the technical scheme of formation, all drop within the patent application right protection range of the present invention.
Claims (9)
1. chip for flip type opto-electronic device, various electrodes are installed on the transfer base substrate by corresponding bonding or pressure welding, it is characterized in that: described chip be shaped as the above polygon in three limits, wherein the pressure welding area of first kind of electrode is located at least one drift angle place on the chip, the pressure welding area of second kind of electrode is located at the chip active area outside the chip drift angle, the spacing at least 100 μ m of two kinds of electrodes.
2. chip for flip type opto-electronic device according to claim 1 is characterized in that: any drift angle of described polygon chip is less than 180 degree; The pressure welding area of first kind of electrode is positioned at any one drift angle place of chip.
3. chip for flip type opto-electronic device according to claim 1 is characterized in that: any drift angle of described polygon chip is less than 180 degree; The pressure welding area of first kind of electrode is positioned at any two or more drift angles place of chip.
4. chip for flip type opto-electronic device according to claim 1 is characterized in that: described polygon chip is a basic configuration with triangle or quadrangle.
5. chip for flip type opto-electronic device according to claim 1, it is characterized in that: the constituent material of described two kinds of electrodes comprises: homogenous material Ti, Ag, Ni, Al, Au, Pt, Sn, In, Cr, Co, ITO, Cu, Fe, ATO, W, ZnO at least, and the complex of several those materials.
6. chip for flip type opto-electronic device according to claim 1, it is characterized in that: described chip has at the bottom of the epitaxial base, comprise at the bottom of the described epitaxial base under the epitaxial substrate, epitaxial substrate on top layer and be first kind of semi-conducting material that sandwich shape is provided with in turn, device active region or quantum well, and second kind of semi-conducting material.
7. novel inverted photoelectric device chip according to claim 6 is characterized in that: at least washability comprise Si base, SiGe base, GaN base, zno-based, GaAs base, InP base, SiC base, AlAs base at the bottom of the epitaxial base of described chip.
8. chip for flip type opto-electronic device according to claim 1, it is characterized in that: described transfer base substrate is the Si, thermal conductive ceramic, MCPCB of tool thermal diffusivity, with pottery, SiC, AlN, the diamond of metallic radiating layer, have the metal of insulating barrier or the composite construction of those materials, and have two kinds of electrode outlet lines and corresponding to the pressure welding area of two kinds of electrodes.
9. chip for flip type opto-electronic device according to claim 1 is characterized in that: the photoelectric device that described chip is suitable for comprises: LED, solid state laser, solar cell and photodetector.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201010146083A CN101807660A (en) | 2010-04-02 | 2010-04-02 | Chip for flip type opto-electronic device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201010146083A CN101807660A (en) | 2010-04-02 | 2010-04-02 | Chip for flip type opto-electronic device |
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| CN101807660A true CN101807660A (en) | 2010-08-18 |
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| CN201010146083A Pending CN101807660A (en) | 2010-04-02 | 2010-04-02 | Chip for flip type opto-electronic device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538480A (en) * | 2015-01-04 | 2015-04-22 | 中国电子科技集团公司第四十四研究所 | Integrated structure for inversely installing high-speed InGaAs photoelectric detector chip and manufacturing method |
| CN106531728A (en) * | 2016-11-08 | 2017-03-22 | 中国电子科技集团公司第四十四研究所 | Stacked punch-through compound photoelectric detector |
| CN107591338A (en) * | 2017-08-11 | 2018-01-16 | 苏州孚尔唯系统集成有限公司 | A kind of electronic package method based on TLP diffusion connections |
| CN110931392A (en) * | 2019-11-18 | 2020-03-27 | 錼创显示科技股份有限公司 | Micro-assembly transfer head, micro-assembly transfer device and micro-assembly display equipment |
| US11600508B2 (en) | 2019-11-18 | 2023-03-07 | PlayNitride Display Co., Ltd. | Micro-component transfer head, micro-component transfer device, and micro-component display |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH0864872A (en) * | 1994-08-18 | 1996-03-08 | Rohm Co Ltd | Semiconductor light emitting element and manufacture thereof |
| JP2001177146A (en) * | 1999-12-21 | 2001-06-29 | Mitsubishi Cable Ind Ltd | Triangular shape semiconductor element and manufacturing method therefor |
| JP2005203516A (en) * | 2004-01-14 | 2005-07-28 | Shurai Kagi Kofun Yugenkoshi | Light emitting diode element and manufacturing method thereof |
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2010
- 2010-04-02 CN CN201010146083A patent/CN101807660A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0864872A (en) * | 1994-08-18 | 1996-03-08 | Rohm Co Ltd | Semiconductor light emitting element and manufacture thereof |
| JP2001177146A (en) * | 1999-12-21 | 2001-06-29 | Mitsubishi Cable Ind Ltd | Triangular shape semiconductor element and manufacturing method therefor |
| JP2005203516A (en) * | 2004-01-14 | 2005-07-28 | Shurai Kagi Kofun Yugenkoshi | Light emitting diode element and manufacturing method thereof |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538480A (en) * | 2015-01-04 | 2015-04-22 | 中国电子科技集团公司第四十四研究所 | Integrated structure for inversely installing high-speed InGaAs photoelectric detector chip and manufacturing method |
| CN106531728A (en) * | 2016-11-08 | 2017-03-22 | 中国电子科技集团公司第四十四研究所 | Stacked punch-through compound photoelectric detector |
| CN106531728B (en) * | 2016-11-08 | 2018-09-21 | 中国电子科技集团公司第四十四研究所 | Pass-through mode composite photoelectric detector is laminated |
| CN107591338A (en) * | 2017-08-11 | 2018-01-16 | 苏州孚尔唯系统集成有限公司 | A kind of electronic package method based on TLP diffusion connections |
| CN110931392A (en) * | 2019-11-18 | 2020-03-27 | 錼创显示科技股份有限公司 | Micro-assembly transfer head, micro-assembly transfer device and micro-assembly display equipment |
| US11600508B2 (en) | 2019-11-18 | 2023-03-07 | PlayNitride Display Co., Ltd. | Micro-component transfer head, micro-component transfer device, and micro-component display |
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Application publication date: 20100818 |