CN101807508B - Substrate treatment apparatus - Google Patents
Substrate treatment apparatus Download PDFInfo
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- CN101807508B CN101807508B CN200910254177.3A CN200910254177A CN101807508B CN 101807508 B CN101807508 B CN 101807508B CN 200910254177 A CN200910254177 A CN 200910254177A CN 101807508 B CN101807508 B CN 101807508B
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- 239000000758 substrate Substances 0.000 title claims abstract description 252
- 238000006243 chemical reaction Methods 0.000 claims abstract description 16
- 238000012545 processing Methods 0.000 claims description 34
- 230000000694 effects Effects 0.000 claims description 3
- 239000010408 film Substances 0.000 description 100
- 238000000034 method Methods 0.000 description 79
- 230000008569 process Effects 0.000 description 78
- 238000009826 distribution Methods 0.000 description 23
- 238000012546 transfer Methods 0.000 description 16
- 238000005259 measurement Methods 0.000 description 12
- 230000005684 electric field Effects 0.000 description 9
- 238000010420 art technique Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
Abstract
A substrate treatment apparatus includes a chamber providing a reaction region and including first and second sides facing each other, a module connected to the first side, an upper electrode in the reaction region, a substrate holder facing the upper electrode, wherein a substrate is disposed on the substrate holder, and first and second points are defined on the substrate, wherein the first point corresponds to a center of the substrate, and the second point is distant from the first point toward the first side, and a feeding line for applying an RF power, the feeding line connected to the upper electrode corresponding to the second point.
Description
The cross-application of related application
No. 10-2008-0125507th, the korean patent application case that request of the present invention is applied on December 10th, 2008 and the rights and interests of No. 10-2009-0093151 of applying on September 30th, 2009, it is with way of reference and in herein.
Technical field
The present invention relates to a kind of substrate processing apparatus, especially have and relate to a kind of substrate processing apparatus with homogeneous plasma.
Background technology
Generally speaking, via the depositing operation of deposit film on substrate, use light-sensitive material to expose or cover this film selection district photoetching process and graphically the selection district of this film etch process and manufacture semiconductor device, display equipment or thin-film solar cells.In described a plurality of technique, in the substrate processing apparatus setting according to optimum condition, carry out depositing operation and etch process.
Fig. 1 is the cross sectional view illustrating according to the substrate processing apparatus of related art techniques, and Fig. 2 is that explanation is according to the substrate processing apparatus schematic diagram that comprises transfer chamber of related art techniques.
In Fig. 1, substrate processing apparatus 10 comprises process chamber 12, base plate 14, gas supply line 36, gas distribution grid 18, substrate holder 22, substrate entrance 40 and exhaust outlet 24.Process chamber 12 provides reaction compartment.Base plate 14 is seated the top in process chamber 12, and as plasma electrode.Gas supply line 36 is connected with base plate 14 and provides source gas to process chamber 12.Gas distribution grid 18 is seated under base plate 14 and for aluminum.Gas distribution grid 18 comprises a plurality of hand-holes.Substrate holder 22 is used as the comparative electrode of this plasma electrode, and substrate 20 is arranged in substrate holder 22.Substrate 20 is via substrate entrance 40 discrepancy process chambers 12.Via exhaust outlet 24, discharge reacting gas and accessory substance used in process chamber 12.
Gas supply line 36 is connected with radio frequency (RF) power source 30 through feed line 38.In addition, gas supply line 36 is connected with remote plasma body controller 50.Between RF power source 30 and feed line 38, arrange and adjust the adaptation 32 that impedance is used.Between gas distribution grid 18 and base plate 14, form cushion space 26, and gas distribution grid 18 be placed in from base plate 14 extend and connected support 28 on.Source of supply gas is to process chamber 12, and the RF power of RF power source 30 adds to base plate 14 and gas distribution grid 18.Plasma produces because of the electric field of 22 of gas distribution grid 18 and substrate holder.Therefore, on substrate 20, form film, or the film on etching substrates 20.
Gas supply line 36 is placed in the central portion at the alignment processing Shi12 center of base plate 14.Base plate 14 with respect to the vertical line by gas supply line 36 and horizontal each there is symmetrical structure.For treatment substrate 20 in process chamber 12, as shown in Figure 2, groove valve 42 is connected with the substrate entrance 40 of process chamber 12, and transfer chamber 44 is connected with groove valve 42.Transfer chamber 44 provides substrate 20 to enter process chamber 12 or sends out substrate 20 from process chamber 12.
Groove valve 42 is sequentially connected with the first side with substrate entrance 40 of process chamber 12 with transfer chamber 44, but groove valve and transfer chamber do not connect with the Second Edge of the relative substrate entrance 40 of process chamber 12.In addition,, when RF power adds to base plate 14 and gas distribution grid 18, the RF electric current that RF power source 30 provides flows with the surface of transfer chamber 44 along the made process chamber 12 of electric conducting material, groove valve 42.Except base plate 14 and gas distribution grid 18, RF electric current can be sent to the conductive surface adjoining, i.e. process chamber 12, groove valve 42 and transfer chamber 44.
Incidentally, in the substrate processing apparatus 10 of related art techniques as shown in Figures 1 and 2, possibly cannot produce equably plasma.Therefore, may on substrate 20, form the film with uneven gauge.The uneven gauge of this film results from the asymmetric of electric field.The RF electric current that is positioned at the Second Edge with respect to substrate entrance 40 of process chamber 12 only flows and has the first path along the surface of process chamber 12.On the other hand, the RF electric current of the first side with substrate entrance 40 that is positioned at process chamber 12 along the surface of process chamber 12, groove valve 42 flows with transfer chamber 44 and have the second path, this second path is because of groove valve 42 and transfer chamber 44 this first via path length.
Therefore, the difference between first and second path causes the asymmetric of electric field.The asymmetric formation that can upset the generation of homogeneous plasma and affect film of this electric field.On substrate 20, adjoining the formed film thickness of process chamber 12 first side is thicker than and on substrate 20, adjoins the formed film thickness of process chamber 12 Second Edge.Therefore, the thickness of this film is inhomogeneous.
For head it off, can improve by increasing the distance of 22 of gas distribution grid 18 and substrate holder the uniformity of plasma.Yet in this case, the density of plasma can reduce, and on substrate 20, formed density of film can reduce.
Summary of the invention
Therefore, the present invention relates to a kind of substrate processing apparatus, it is set up in order to top electrode is applied to the feed line of RF power away from the point of substrate center by correspondence, and generation homogeneous plasma and formation have the film of uniform thickness.
Another target of the present invention is to provide substrate processing apparatus, it is set up respectively in order to top electrode is applied to first and second feed line of RF power by counterpart substrate center and away from the point of this substrate center, and generation homogeneous plasma and formation have the film of uniform thickness.
Other object and advantage of the present invention is illustrated in following description, and can be apparent from this description in part, or can learn by implementing the present invention.Can by the structure specializing in written explanation and claim and accompanying drawing, realize and reach target of the present invention and other advantage.
For realizing these and other advantage and foundation object of the present invention, as embodied and broadly described, a kind of substrate processing apparatus comprises chamber, and this chamber provides conversion zone and comprises first and second limit respect to one another; Module, connects this first side; Top electrode, is arranged in this conversion zone; Substrate holder facing to this top electrode, wherein arranges substrate in this substrate holder, and on this substrate, defines first and second point, and wherein this first to center that should substrate, and this second point away from this first towards this first side; And feed line, in order to apply RF power, this feed line is connected to top electrode and corresponding this second point.
In another embodiment, a kind of substrate processing apparatus comprises chamber, and this chamber provides conversion zone and comprises first and second limit respect to one another; Top electrode, is arranged in this conversion zone; Substrate holder, facing to this top electrode, wherein in this substrate holder, substrate is set, and this substrate has the rectangle of length and width (it is shorter than length), wherein on this substrate, define first and second point, this first to center that should substrate, and this second point away from this first towards this first side, distance reach this substrate length 2% to 5%; And feed line, in order to apply RF power, this feed line is connected to top electrode and corresponding this second point.
In another embodiment, a kind of substrate processing apparatus comprises chamber, and this chamber provides conversion zone and comprises first and second limit respect to one another; Top electrode, is arranged in this conversion zone; Substrate holder, facing to this top electrode, wherein in this substrate holder, substrate is set, and this substrate has the rectangle of length and width (it is shorter than length), wherein on this substrate, define first and second point, this first to center that should substrate, and this second point away from this first towards this first side, distance reach this substrate length 10% to 30%; And first and second feed line, in order to apply RF power, this first and second feed line is connected to top electrode and corresponding this first and second point separately.
Be understandable that, general introduction above and below be specified as exemplary and illustrative, aim to provide the further explanation of asked invention.
Accompanying drawing explanation
Further understanding of the present invention is provided, and is incorporated to this and illustrates and as its a part of accompanying drawing, embodiments of the invention be described, and with this description in order to explain principle of the present invention, in a plurality of accompanying drawings:
Fig. 1 is that explanation is according to the cross sectional view of the substrate processing apparatus of related art techniques.
Fig. 2 is that explanation is according to the substrate processing apparatus schematic diagram that comprises transfer chamber of related art techniques.
Fig. 3 is that explanation is according to the cross sectional view of the substrate processing apparatus of the first embodiment of the present invention.
Fig. 4 is that explanation is according to the substrate processing apparatus schematic diagram that comprises transfer chamber of the first embodiment of the present invention.
Fig. 5 is that explanation is according to the plane graph of the substrate processing apparatus of the first embodiment of the present invention.
Fig. 6 is that explanation is according to the cross sectional view of the substrate processing apparatus of the second embodiment of the present invention.
Fig. 7 is that explanation is according to the plane graph of the substrate processing apparatus of the second embodiment of the present invention.
Fig. 8 is a chart, is presented in the first embodiment of the present invention film thickness fixed with the distance of feed line.
Fig. 9 is a chart, is presented in the first embodiment of the present invention film equality fixed with the distance of feed line.
Figure 10 is a chart, is presented in the second embodiment of the present invention film thickness fixed with the distance of feed line.
Figure 11 is a chart, is presented in the second embodiment of the present invention film equality fixed with the distance of feed line.
Embodiment
Now carefully with reference to preferred example embodiment illustrated in accompanying drawing.Possible in the situation that, similar component symbol will be in order to mean same or analogous part.
Fig. 3 is that explanation is according to the cross sectional view of the substrate processing apparatus of the first embodiment of the present invention.Fig. 4 is that explanation is according to the substrate processing apparatus schematic diagram that comprises transfer chamber of the first embodiment of the present invention.Fig. 5 is that explanation is according to the plane graph of the substrate processing apparatus of the first embodiment of the present invention.Fig. 8 is a chart, is presented in the first embodiment of the present invention film thickness fixed with the distance of feed line.Fig. 9 is a chart, is presented in the first embodiment of the present invention film equality fixed with the distance of feed line.
In Fig. 3, the substrate processing apparatus 110 that the substrate of processing semiconductor device and large scale liquid crystal display unit is used comprises process chamber 112, base plate 114, gas supply line 136, gas distribution grid 118, substrate holder 122, substrate entrance 140 and exhaust outlet 124.Process chamber 112 provides reaction compartment and comprises first side and the Second Edge relative with first side.Base plate 114 is seated the top in process chamber 112, and as top electrode.Gas supply line 136 is connected with base plate 114 and provides source gas to process chamber 112.Gas distribution grid 118 is seated under base plate 114 and for aluminum.Gas distribution grid 118 comprises a plurality of hand-holes 116.Substrate holder 122 is used as the comparative electrode (being bottom electrode) of this top electrode, and substrate 120 is arranged in substrate holder 122.Substrate entrance 140 is arranged on the first side of process chamber 112, through it, transmits substrate 120 turnover process chambers 112.Via exhaust outlet 124, discharge reacting gas and accessory substance used in process chamber 112.
For treatment substrate 120 in going out process chamber 112, as shown in Figure 4, groove valve 142 is connected with substrate entrance 140 and module 144, and module 144 is in order to provide substrate 120 to enter process chamber 112 or to send out substrate 120 from process chamber 112.Module 144 can comprise transfer chamber or loadlock chamber.When module 144 is connected with process chamber 112, groove valve 142 and module 144 are sequentially built up in the first side with substrate entrance 140 of process chamber 12.Yet the Second Edge of the process chamber 112 of the first side (having substrate entrance 140) of process chamber 112 is not set up groove valve and transfer chamber relatively.
Process chamber 112 comprises chamber cap 112a and chamber body 112b, and chamber body 112b is combined with chamber cap 112a movably and is sealed this reaction compartment.Chamber body 112b can have band and have or not cylindrical shape or the polygon (it comprises the quadrangle of rectangle) that pushes up top.Chamber cap 112a can be plate, and it has the shape of respective chamber/chambers body 112b.Although not shown, but sealing device (for example O shape ring or packing ring) between chamber cap 112a and chamber body 112b, inserted, and chamber cap 112a can pass through fixture and combination with chamber body 112b.
Gas supply line 136 is connected with remote plasma body controller 150.Between RF power source 130 and feed line 138, arrange and adjust the adaptation 132 that impedance is used.Gas distribution grid 118 be placed in from base plate 114 extend and connected support 128 on, make to form cushion space 126 between gas distribution grid 118 and base plate 114.
Cushion space 126 holds a plurality of sources gas that gas supply line 136 provides, and base plate 114 prevents that described a plurality of sources gas from upwards leaking to cushion space 126.Through gas distribution grid 118, to substrate holder 122, inject equably described a plurality of sources gas.Therefore, between substrate holder 122 and gas distribution grid 118, supply described a plurality of sources gas, and base plate 114 and gas distribution grid 118 are applied to RF power.Plasma produces because of the electric field of 122 of gas distribution grid 118 and substrate holder.Therefore, can on substrate 120, form film, or the film on can etching substrates 120.Substrate holder 122 can ground connection.
As shown in Figure 5, substrate 120 is arranged in substrate holder 122, and gas supply line 136 is connected to base plate 114 correspondences and 1: 146, and it is seated substrate 120 center.In the drawings, substrate 120 with respect to the vertical line by 1: 146 (its corresponding gas supply line 136) and horizontal each can there is symmetrical structure.Gas supply line 136 can be arranged on the middle body of base plate 114, and in the drawings, base plate 114 with respect to the vertical line by gas supply line 136 and horizontal each can there is symmetrical structure.
The feed line 138 connecting with RF power source 130 be connected to base plate 114 corresponding second point 148.Second point 148 is away from 1: 146 (it is seated substrate 120 center and corresponding gas supply line 136) and towards the first side that comprises substrate entrance 140 of process chamber 112, distance reach substrate 120 length (it is longer than the width of rectangular substrate 120) 2% to 5%.Valuably, feed line 138 is located at base plate 114 correspondences and second point 148, and it is away from 1: 146 (corresponding gas supply line 136) of substrate 120, distance reach substrate 120 length 3% to 4%.
It is desirable to, feed line 138 is located at base plate 114 correspondences and second point 148, it is away from 1: 146 (its corresponding gas supply line 136) of substrate 120, distance reach substrate 120 length 2.5% to 4%, make the film that forms on substrate 120 there is the even thickness degree lower than 4%.
In the drawings, substrate 120 is asymmetrical with respect to the vertical line by second point 148 (its correspondence feed line 138), and is symmetrical with respect to the horizontal line by second point 148.In Fig. 3 and Fig. 5, only a feed line 138 can be connected to base plate 114 correspondences and second point 148.
Fig. 8 and Fig. 9 are charts, show respectively in the first embodiment of the present invention, film thickness and the uniformity according to the change of distance of 136 of feed line 138 and gas supply lines, this feed line is connected to base plate 114 correspondences and second point 148 (its away from 1: 146 towards substrate entrance 140), and gas supply line 136 is connected to base plate 114 correspondences, 1: 146 (it is seated substrate 120 center).
In Fig. 8, X-axis representative is by 1: 146 major axis of substrate 120, and the thickness of formed film on Y-axis display base plate 120
more particularly, the demonstration of the X-axis of Fig. 8 is by measurement point on the line of the length direction of 1: 146 and parallel substrate 120 of substrate 120.The X-axis of Fig. 8 can be corresponding by 1: 146 the horizontal line of Fig. 5.Measurement point is to be defined by making this measurement point to be configured on 1: 146 the horizontal line by substrate 120, and spaced apart with preset distance each other.According to the distance of 138 of gas supply line 136 and feed lines, at each measurement point, measure the thickness of film, gas supply line 136 and feed line 138 are located at base plate 114 corresponding 1: 146 and second point 148 of substrate 120 respectively.
In Fig. 9, the uniformity of Y-axis demonstration film (more particularly, the even thickness degree of film), and X-axis shows from gas supply line 136 change of distance to feed line 138, feed line 138 is connected to base plate 114 correspondences and second point 148 (its away from 1: 146 towards substrate entrance 140), and 136 correspondences of gas supply line 1: 146 (it is seated substrate 120 center).In brief, the distance that the demonstration 1: 146 of the X-axis of Fig. 9 and second point are 148, the percentage of the length of its counterpart substrate 120.
Can on substrate 120, form many material categorys or there is the film of the material of various functions.For example, in the first embodiment of the present invention, form the silicon nitride layer that is widely used in LCD device.Herein, in process chamber 112, can be at the pressure of 1.2torr and Celsius temperature 290 degree to 295 degree, by the unit of providing respectively, be 6500sccm, the 28000sccm of standard milliliter per minute (sccm) and the SiH of 76500sccm
4, NH
3and N
2gas, and form this silicon nitride layer by feed line 138 being applied to the RF power of 22kW.In addition, substrate 120 can have the thickness of the length of 2500mm, the width of 2200mm and 0.7mm.
Substrate 120 can be used for LCD device the 8th generation equipment.Substrate 120 can be the rectangle with the length of 250cm and the width of 220cm.In the first embodiment of the present invention as shown in Fig. 3 to 5, when substrate 120 has the length of 250cm and the width of 220cm, can define according to the length percent of the substrate 120 shown in table 11: 146 and the distance of 148 of second points, it is corresponding gas supply line 136 and feed line 138 respectively.
[table 1]
| Substrate length percent | Distance between first and second point | |
| Ref.1 | 0％ | 0cm |
| Ref.2 | 2％ | 5cm |
| Ref.3 | 3％ | 7.5cm |
| Ref.4 | 4％ | 10cm |
| Ref.5 | 5％ | 12.5cm |
On 1: 146 the major axis by substrate 120, define several measurement points, it is spaced apart with preset distance each other.Formed each film thickness of condition at each measurement point beasurement base Ref.1 to Ref.5.Use maximum and minimum thickness value to calculate the even thickness degree of each film, and table 2 show the even thickness degree of each film.Fig. 9 shows the data of table 2 with chart.
[table 2]
In table 1, the corresponding feed line 138 of Ref.1 be connected to gas supply line 136 and 1: 146 and the distance of 148 of second points be the situation of 0cm.Corresponding second point 148 is away from 1: 146 respectively for Ref.2, Ref.3, Ref.4 and Ref.5, and distance reaches 2%, 3%, 4% and 5% situation of the length of substrate 120.In table 2, by the formula of " { (maximum ga(u)ge value)-(minimum thickness value)/(maximum ga(u)ge value)+(minimum thickness value) } x100 ", calculate the even thickness degree of each film.
Be similar to the Ref.1 of table 1, when feed line 138 is connected to gas supply line 136 and feed line 138 and is arranged at base plate 114 correspondences and substrate 120 center, on substrate 120, adjoin process chamber 112 first side (thering is substrate entrance 140) film thickness (approximately
) be thicker than the Second Edge that adjoins process chamber 112 on substrate 120 (in the face of substrate entrance 140) film thickness (approximately
).Therefore, as shown in table 2, in the situation of Ref.1, on substrate 120, the even thickness degree of formed film is about 14.40%, and the thickness deviation of film is very high.
Yet, be similar to the Ref.2 to Ref.5 of table 1, when feed line 138 is connected to base plate 114 correspondences and second point 148 (it is away from 1: 146 of substrate 120), as shown in table 2, improve quite significantly the even thickness degree of formed film on substrate 120.
As shown in table 1, when second point 148 reaches 5cm away from 1: 146 (situation of Ref.2), each film thickness that adjoins the first side (having substrate entrance 140) of process chamber 112 and the Second Edge of process chamber 112 (in the face of first side) on substrate 120 is thicker, and the supercentral film thickness of substrate 120 is thinner.Even thickness degree as shown in table 2, to have improved film compared with Ref.1, is about 6.13%.
As shown in table 1, when second point 148 reaches 12.5cm away from 1: 146 (situation of Ref.5), core from the first side of process chamber 112 to process chamber 112 has reduced film thickness, and the Second Edge to process chamber 112 has increased film thickness from the core of process chamber 112.Even thickness degree as shown in table 2, to have improved film compared with Ref.1, is about 5.58%.
As shown in table 1, in the situation of Ref.3 and Ref.4, on substrate 120, adjoin the first side of process chamber 112 and each film thickness of Second Edge has some deviations, and even thickness degree is respectively 2.15% and 3.67%, it is quite even.
As shown in Figure 8, situation compared to Ref.1 and Ref.2, the distance between 1: 146 and the second point 148 of Ref.3 to Ref.5 (its corresponding feed line 138 and away from 1: 146 towards substrate entrance 140) the length of substrate 120 3% to 5% in situation in, the formed film thickness of first side that adjoins process chamber 112 on substrate 120 is thinner than the formed film thickness of Second Edge (it is relative with the first side of process chamber 112) that adjoins process chamber 112 on substrate 120.
According to the experimental result of Fig. 8, Fig. 9, table 1 and table 2, when feed line 138 is connected to base plate 114 correspondences and second point 148 (it reaches about 5cm to about 12cm away from 1: 146 of substrate 120), even thickness degree can be improved to lower than 10%.When the condition of the Ref.2 to Ref.5 according to table 1 forms film, the even thickness degree of table 2 is in 0 to 10% scope.
Valuably, when feed line 138 is connected to base plate 114 correspondences and second point 148 (it reaches 7cm to 10cm away from 1: 146), can further improve the even thickness degree of film.The even thickness degree of film has lower value, and the even thickness degree of film is better, and the even thickness degree of film is preferably 0%.Conventionally, when film is used for display equipment or semiconductor device, the even thickness degree of film is lower than 10%.Yet, when needs high accuracy, can select nearly 0% even thickness degree condition.
For the product of making, in expection, on substrate 120, formed film has the even thickness degree lower than 4%.With reference to Fig. 9, self feeding line 138 to the distance (the even thickness degree of its correspondence 0% to 4%) of gas supply line 136 in " A " scope of the length of substrate 120,2.5% to 4%.Therefore, it is desirable to, feed line 138 is located at base plate 114 correspondences and second point 148, its 1: 146 (its corresponding gas supply line 136) away from substrate 120 reach substrate 120 length 2.5% to 4%, make the even thickness degree of formed film on substrate 120 in 0% to 4% scope.
By analyze experimental result obtain second point 148 (its away from 1: 146 towards substrate entrance 140, distance reach substrate 120 length 2% to 5%) locate to set up feed line 138.Be understandable that, because electric field center moves according to the position of feed line 138, therefore the thickness variable of film.
When the RF of RF power source 130 power adds to base plate 114 and gas distribution grid 118, RF electric current flows along the formed process chamber 112 of electric conducting material, groove valve 142 and the surface of module 144 because of RF power.Except base plate 114 and gas distribution grid 18, RF electric current can be sent to the conductive surface adjoining, i.e. process chamber 112, groove valve 142 and module 144.
In the first embodiment of the present invention, if set up feed line 138 as Fig. 3 to Fig. 5, can improve the even thickness degree of formed film on substrate 120.This improve the asymmetric reason with forming homogeneous film of the electric field of related art techniques.At the Second Edge of process chamber 112 (it is in the face of substrate entrance 140), along the surface of process chamber 112, flow and the RF electric current of ground connection has the first path, and flow and the RF electric current of ground connection has the second path along surface, groove valve 142 and the module 144 of process chamber 112 at the first side (it has substrate entrance 140) of process chamber 112.Because being set up to from process chamber 112 center, moves toward substrate entrance 140 feed line 138, thus improved asymmetric along the RF electric current of this first and second path flow, and the deviation of the film thickness on substrate 120 is minimized.
By set up prejudicially feed line 138 as above-mentioned, having along the RF electric current of this first and second path flow is in fact symmetrical effect.In addition, can set up gas supply line 136 at base plate 114 places that feed line 138 is set, and feed line 138 can be connected to gas supply line 136.In this time, can gas supply line 136 be set at second point 148 places.
Fig. 6 is that explanation is according to the cross sectional view of the substrate processing apparatus of the second embodiment of the present invention.Fig. 7 is that explanation is according to the plane graph of the substrate processing apparatus of the second embodiment of the present invention.Figure 10 is a chart, is presented in the second embodiment of the present invention film thickness fixed with the distance of feed line.Figure 11 is a chart, is presented in the second embodiment of the present invention film equality fixed with the distance of feed line.
In Fig. 6 and Fig. 7, substrate 120 is arranged in substrate holder 122, and gas supply line 136 is connected to base plate 114 correspondences and 1: 146, and it is seated in substrate 120 center.In the drawings, substrate 120 with respect to the vertical line by 1: 146 (its corresponding gas supply line 136) and horizontal each can there is symmetrical structure.Gas supply line 136 can be arranged on the middle body of base plate 114, and in the drawings, base plate 114 with respect to the vertical line by gas supply line 136 and horizontal each can there is symmetrical structure.
The feed line 138 being connected with RF power source 130 comprises first and second feed line 138a and 138b.The first feed line 138a is connected to gas supply line 136.The second feed line 138b is connected to base plate 114 correspondences and second point 148, its away from 1: 146 (its correspondence gas supply line 136) of substrate 120 towards the first side (it comprises substrate entrance 140) of process chamber 112, distance reach substrate 120 length 10% to 30%.Valuably, the second feed line 138b is located at base plate 114 correspondences and second point 148, its away from 1: 146 (its correspondence gas supply line 136) of substrate 120 towards substrate entrance 140, distance reach substrate 120 length 20%.
In the drawings, substrate 120 is asymmetrical with respect to the vertical line by second point 148 (corresponding the second feed line 138b), and is symmetrical with respect to the horizontal line by second point 148.Can set up two above feed lines according to occasion demand.During this time, 1: 146 place that can substrate 120 in base plate 114 correspondences sets up one of described a plurality of feed lines, and other feed line is set up in the region of 1: 146 that can substrate entrance 140 and substrate 120 in base plate 114 correspondences.
When gas supply line 136 is arranged on the middle body of base plate 114, the first feed line 138a can be connected to gas supply line 136, and the second feed line 138b can be connected to base plate 114 at the point away from gas supply line 136, its distance reach base plate 114 length 10% to 30%, wherein base plate 114 is the rectangles with length and width (it is shorter than this length).Valuably, the second feed line 138b can be connected to base plate 114 at the point away from gas supply line 136 centers, its distance reach base plate 114 length 10%.
1: 146 and second point 148 (corresponding gas supply line 136 connects respectively the first feed line 138a and the second feed line 138b) preferably each interval reach substrate 120 length 15% to 20%.In the drawings, base plate 114 is asymmetrical with respect to the vertical line by the second feed line 138b, and is symmetrical with respect to the horizontal line by the second feed line 138b.In Fig. 6 and Fig. 7, only there are two feed line 138a and 138b can be connected to base plate 114, respectively corresponding 1: 146 and second point 148.
Figure 10 and Figure 11 are charts, show respectively in the second embodiment of the present invention, when being connected to gas supply line 136 correspondences, the first feed line 138a 1: 146 (it is positioned at substrate 120 center), and the second feed line 138b is connected to base plate 114 correspondences while second point 148 (its away from 1: 146 towards substrate entrance 140), with 1: 146 and the change of distance of 148 of second points and fixed film thickness and the uniformity.
In Figure 10, X-axis representative is by 1: 146 major axis of substrate 120, and the thickness of formed film on Y-axis display base plate 120
more particularly, the demonstration of the X-axis of Figure 10 is by measurement point on the line of the length direction of 1: 146 and parallel substrate 120 of substrate 120.The X-axis of Figure 10 can be corresponding by 1: 146 the horizontal line of Fig. 7.Measurement point is to be defined by making this measurement point to be configured on 1: 146 the horizontal line by substrate 120, and spaced apart with preset distance each other.According to 1: 146 and the distance of 148 of second points and measure the thickness of film at each measurement point, 1: 146 and second point 148 corresponding the first feed line 138a and the second feed line 138b respectively.
In Figure 11, the uniformity of Y-axis demonstration film (more particularly, the even thickness degree of film), and X-axis shows the change of distance between the first feed line 138a and the second feed line 138b, the first feed line 138a and the second feed line 138b be connected respectively to gas supply line 136 (its correspondence be seated substrate 120 center 1: 146) and base plate 114 correspondences second point 148 (its away from 1: 146 towards substrate entrance 140).The X-axis correspondence of Figure 11 the percentage of the length of substrate 120.
Can on substrate 120, form many material categorys or there is the film of the material of various functions.For example, in the second embodiment of the present invention, form the silicon nitride layer that is widely used in LCD device.Herein, in process chamber 112, can to 295 degree, by the unit of providing, be 6500sccm, the 28000sccm of standard milliliter per minute (sccm) and the SiH of 76500sccm respectively at pressure and Celsius temperature 290 degree of 1.2torr
4, NH
3and N
2gas, and form this silicon nitride layer by feed line 138 being applied to the RF power of 22kW.In addition, substrate 120 can be the glass substrate of the thickness with the length of 2500mm, the width of 2200mm and 0.7mm.
Substrate 120 can be used for LCD device the 8th generation equipment.Substrate 120 can be the rectangle with the length of 250cm and the width of 220cm.In the second embodiment of the present invention as shown in Fig. 6 and 7, when substrate 120 has the length of 250cm and the width of 220cm, can define according to the length percent of the substrate 120 shown in table 31: 146 and the distance of 148 of second points, its first feed line 138a and second feed line 138b that corresponding gas supply line 136 connects respectively.
[table 3]
| Substrate length percent | Distance between first and second point | |
| Ref.1 | 0％ | 0cm |
| Ref.2 | 10％ | 25cm |
| Ref.3 | 20％ | 50cm |
| Ref.4 | 30％ | 75cm |
On the major axis of 1: 146 and second point 148 by substrate 120, define a plurality of measurement points, it is spaced apart with preset distance each other.Formed each film thickness of condition at the Ref.1 to Ref.4 of each measurement point beasurement base table 3.Use maximum and minimum thickness value to calculate the even thickness degree of each film, and table 4 show the even thickness degree of each film.Figure 11 is shown as chart by the data of table 4.
[table 4]
In table 3, corresponding first and second feed line 138a of Ref.1 and 138b be connected to gas supply line 136 and 1: 146 and the distance of 148 of second points be the situation of 0cm.Corresponding second point 148 is away from 1: 146 respectively for Ref.2, Ref.3 and Ref.4, and distance reaches 10%, 20% and 30% situation of the length of substrate 120.In table 4, by the formula of " { (maximum ga(u)ge value)-(minimum thickness value)/(maximum ga(u)ge value)+(minimum thickness value) } x100 ", calculate the even thickness degree of each film.
Be similar to the Ref.1 of table 3, when first and second feed line 138a and 138b are connected to gas supply line 136 and the second feed line 138b and are arranged at counterpart substrate 120 center, on substrate 120, adjoin process chamber 112 first side (it has substrate entrance 140) film thickness (approximately
) be thicker than the Second Edge (it is relative with this first side) that adjoins process chamber 112 on substrate 120 film thickness (approximately
).Therefore, as shown in table 4, in the situation of the Ref.1 of table 3, on substrate 120, the even thickness degree of formed film is about 14.40%, and the thickness deviation of film is very high.
Yet, be similar to the Ref.2 to Ref.4 of table 3, when being connected to gas supply line 136 correspondences, the first feed line 138a 1: 146 (it is arranged at substrate 120 center), and when the second feed line 138b is connected to base plate 114 correspondences and second point 148 (it is away from 1: 146 of substrate 120), as shown in table 4, improve quite significantly the even thickness degree of formed film on substrate 120.
Second point 148 at the Ref.2 of table 3 reaches in 25cm situation away from 1: 146, and the film thickness that adjoins the first side (it has substrate entrance 140) of process chamber 112 on substrate 120 is thicker than the film thickness of the Second Edge (it is in the face of the first side of process chamber 112) that adjoins process chamber 112 on substrate 120.Compare with the Ref.1 of table 3, improved the even thickness degree of film, be about 5.46%.
Second point 148 at the Ref.3 of table 3 reaches in 50cm situation away from 1: 146, and the film thickness that adjoins the first side (it has substrate entrance 140) of process chamber 112 on substrate 120 is thicker than the film thickness of the Second Edge (it is in the face of the first side of process chamber 112) that adjoins process chamber 112 on substrate 120.The even thickness degree that has improved film compared with Ref.1 and Ref.2, is about 2.36%.
In the situation of the Ref.4 of table 3, film thickness increases from first side to the Second Edge of process chamber 112, and the even thickness degree that has improved film compared with Ref.1, is about 5.87%.
Experimental result according to Figure 10, Figure 11, table 3 and table 4, when the distance of (its respectively corresponding first and second point 146 and 148) between first and second feed line 138a and 138b is in the scope at 25cm to 75cm time, even thickness degree can be improved to lower than 10%.When the condition of the Ref.2 to Ref.4 according to table 3 forms film, the even thickness degree of table 4 is in 0 to 10% scope.Valuably, when the second feed line 138b is connected to base plate 114 correspondences and second point 148 (its first feed line 138a away from corresponding 1: 146 reaches about 50cm), can further improve the even thickness degree of film.
In the second embodiment of the present invention of Fig. 6 and Fig. 7, when base plate 114 has the length of 250cm and the width of 220cm, the second feed line 138b can be located at away from center and reach about 25cm to 75cm part, and ideally, can be located at away from center and reach about 50cm part.In fact, this effect is equal to RF power and is added on the mid point between first and second feed line 138a and 138b.
The even thickness degree of film has lower value, and the even thickness degree of film is better, and the even thickness degree of film is preferably 0%.Conventionally, when film is used for display equipment or semiconductor device, the even thickness degree of film is lower than 10%.Yet, when needs high accuracy, can select nearly 0% even thickness degree condition.
For the product of making, in expection, on substrate 120, formed film has the even thickness degree lower than 4%.With reference to Figure 11, the distance between first and second feed line 138a and 138b (the even thickness degree of its correspondence 0% to 4%) is in " B " scope of the length of substrate 120,15% to 25%.Therefore, it is desirable to, 1: 146 and second point 148 of substrate 120 (its first feed line 138a and the second feed line 138b that corresponding gas supply line 136 connects respectively) each interval reach substrate 120 length 15% to 25%, make the even thickness degree of formed film on substrate 120 in 0% to 4% scope.
By analyzing experimental result, obtain at second point 148 places (its away from 1: 146 towards substrate entrance 140, distance reach substrate 120 length 10% to 30%) set up the second feed line 138b.Be understandable that, because of the position of electric field center foundation the second feed line 138b, move, therefore the thickness variable of film.
When the RF of RF power source 130 power adds to base plate 114 and gas distribution grid 118, RF electric current flows along the formed process chamber 112 of electric conducting material, groove valve (not shown) and module (not shown) surface because of RF power.Except base plate 14 and gas distribution grid 18, RF electric current can be sent to the conductive surface adjoining, i.e. process chamber 112, groove valve and module.
If set up first and second feed line 138a and 138b as shown in Figures 6 and 7, can improve the even thickness degree of formed film on substrate 120.This improve the asymmetric reason with forming homogeneous film of the electric field of related art techniques.At the Second Edge of process chamber 112 (it is in the face of substrate entrance 140), from first and second feed line 138a and 138b flows along the surface of process chamber 112 and the RF electric current of ground connection has the first path, and from first and second feed line 138a and 138b, surface, groove valve and the module along process chamber 112 flows and the RF electric current of ground connection has the second path at the first side (it has substrate entrance 140) of process chamber 112.Because feed line 138 is set up to from process chamber 112 center (its counterpart substrate 1: 146) migration substrate entrance 140, improved asymmetric along the RF electric current of this first and second path flow, and the deviation of the film thickness on substrate 120 is minimized.
In substrate processing apparatus of the present invention, because feed line is connected to top electrode, its correspondence away from substrate center the point towards substrate entrance (arranging as transfer chamber and groove valve module) herein, therefore improved, the mobile RF current path of chamber surfaces and asymmetric between the mobile RF current path in the limit of substrate entrance at the edge with respect to this substrate entrance.Can form because of the generation of homogeneous plasma the film with uniform thickness.
Meanwhile, feed line comprises first and second feed line of supply RF power.This first feed line is connected to the center that top electrode correspondence substrate, and this second feed line is connected to top electrode correspondence and away from substrate center the point towards substrate entrance (arranging as transfer chamber and groove valve module) herein.Therefore, improved and at the edge with respect to this substrate entrance, the mobile RF current path of chamber surfaces and asymmetric between the mobile RF current path in the limit of substrate entrance.Therefore, can form because of the generation of homogeneous plasma the film with uniform thickness.
Those skilled in the art will be understood that without departing from the spirit and scope of the invention when carrying out various modifications and variation.Therefore, mean, the modifications and variations of the present invention that provide in appended claim and its equivalent scope have been provided in the present invention.
Claims (5)
1. a substrate processing apparatus, comprising:
Chamber, provides conversion zone and comprises first and second limit respect to one another;
Module, is connected to described first side;
Top electrode, is arranged in described conversion zone;
Substrate holder, facing to described top electrode, wherein in described substrate holder, substrate is set, and on described substrate, defines first and second point, the center of wherein said first described substrate of correspondence, and described second point is away from described first and towards described first side;
The first feed line, in order to apply RF power, described the first feed line is connected to described top electrode and corresponding described second point; With
The second feed line, in order to apply RF power, described the second feed line is connected to described top electrode and corresponding described the first point,
Wherein to the first and second feed lines, applying RF power applies RF power with mid point between the first and second feed lines and has identical effect.
2. substrate processing apparatus as claimed in claim 1, wherein said substrate is rectangle, have length and be shorter than the width of described length, and the distance between described first and described second point is in 10% to 30% scope of the length of described substrate.
3. substrate processing apparatus as claimed in claim 1, wherein said substrate is rectangle, have length and be shorter than the width of described length, and the distance between described first and described second point is in 15% to 20% scope of the length of described substrate.
4. a substrate processing apparatus, comprising:
Chamber, provides conversion zone and comprises first and second limit respect to one another;
Top electrode, is arranged in described conversion zone;
Substrate holder, facing to described top electrode, wherein in described substrate holder, substrate is set, and described substrate is rectangle, and there is length and be shorter than the width of described length, wherein on described substrate, define first and second point, the center of described first described substrate of correspondence, and described second point is away from described first and towards described first side, 10% to 30% of the length that the distance between described second point and first is described substrate; And
First and second feed line, in order to apply RF power, described first and second feed line is connected to described top electrode and corresponding described first and second point of difference.
5. substrate processing apparatus as claimed in claim 4, wherein at described first side place, substrate entrance is set, in order to transmit substrate, pass in and out described chamber, groove valve is connected with described substrate entrance, and the module that enters described conversion zone in order to transmit described substrate is connected with described groove valve.
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| CN1696768A (en) * | 2004-05-12 | 2005-11-16 | 应用材料股份有限公司 | Plasma uniformity control by gas diffuser hole design |
| CN101086061A (en) * | 2006-06-09 | 2007-12-12 | 周星工程股份有限公司 | Apparatus of processing substrate |
| CN101298670A (en) * | 2007-05-03 | 2008-11-05 | 应用材料股份有限公司 | Asymmetric grounding of rectangular susceptor |
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| KR100952854B1 (en) * | 2003-07-18 | 2010-04-14 | 주성엔지니어링(주) | Plasma generator for manufacturing large-size LCD substrates |
| KR20050018066A (en) * | 2003-08-13 | 2005-02-23 | 삼성전자주식회사 | Etching apparatus |
| KR20080048243A (en) * | 2006-11-28 | 2008-06-02 | 엘지디스플레이 주식회사 | Plasma enhanced chemical vapor deposition |
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| CN101086061A (en) * | 2006-06-09 | 2007-12-12 | 周星工程股份有限公司 | Apparatus of processing substrate |
| CN101298670A (en) * | 2007-05-03 | 2008-11-05 | 应用材料股份有限公司 | Asymmetric grounding of rectangular susceptor |
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