CN101800172A - Manufacturing method of self-aligned polysilicon floating gate - Google Patents
Manufacturing method of self-aligned polysilicon floating gate Download PDFInfo
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- CN101800172A CN101800172A CN201010123730A CN201010123730A CN101800172A CN 101800172 A CN101800172 A CN 101800172A CN 201010123730 A CN201010123730 A CN 201010123730A CN 201010123730 A CN201010123730 A CN 201010123730A CN 101800172 A CN101800172 A CN 101800172A
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Abstract
The invention provides a manufacturing method of a self-aligned polysilicon floating gate, which comprises the following steps: providing a polysilicon substrate, and forming two shallow trench isolation areas on the polysilicon substrate and a trench between the shallow trench isolation areas; forming a gate oxidization layer on the bottom of the trench between the shallow trench isolation areas, and then forming a first polysilicon layer and a dielectric layer covering the gate oxidization layer and the shallow trench isolation areas in sequence; forming a second polysilicon layer on the dielectric layer; chemically and mechanically grinding the second polysilicon layer until part of the dielectric layer is exposed; removing the exposed dielectric layer with hydrofluoric acid solution; and dry-etching the second polysilicon layer and wet-etching the remaining low-temperature oxidization layer until the first polysilicon layer is exposed. The remaining first polysilicon layer is a polysilicon floating gate. Since the floating gate is obtained with the polysilicon formed in initial deposition, the invention has the advantage that the thickness uniformity of the floating gate is good.
Description
Technical field
The present invention relates to the production of integrated circuits field, concrete, the invention provides a kind of manufacture method of autoregistration multi-crystal silicon floating bar.
Background technology
In semiconductor device, the uniformity of multi-crystal silicon floating bar is extremely important, will directly influence the performance of semiconductor device if the uniformity of multi-crystal silicon floating bar is poor.
Fig. 1 to Fig. 4 is a kind of manufacture method of existing multi-crystal silicon floating bar.
At first,, provide polysilicon substrate 102, be formed with shallow channel isolation area 104 on the described polysilicon substrate 102, between described shallow channel isolation area 104, be formed with groove with reference to shown in Figure 1;
Then, with reference to shown in Figure 2, channel bottom between described shallow channel isolation area 104 forms gate oxide 106, and formation covers the polysilicon layer 108 of described gate oxide 106 and described shallow channel isolation area 104, the thickness of described gate oxide 106 is 90 dusts, and the thickness of described polysilicon layer 108 is 1900 dusts;
Then, with reference to shown in Figure 3, described polysilicon layer 108 is carried out cmp, up to exposing described shallow channel isolation area 104;
At last, with reference to shown in Figure 4, described polysilicon layer 108 being carried out dry etching, is 300 dusts up to the thickness of described polysilicon layer 108.
The multi-crystal silicon floating bar that utilizes above-mentioned prior art to form because follow-up grinding technics brings changing factor, thereby has caused the relatively poor problem of floating boom thickness evenness.
Summary of the invention
For solving the problem of the multi-crystal silicon floating bar lack of homogeneity of making in the prior art, the invention provides a kind of manufacture method of autoregistration multi-crystal silicon floating bar.
For achieving the above object, the manufacture method of autoregistration multi-crystal silicon floating bar of the present invention comprises the steps:
The polysilicon substrate is provided, is formed with at least two shallow channel isolation areas on it, between described shallow channel isolation area, be formed with groove;
Channel bottom between described shallow channel isolation area forms gate oxide, and forms first polysilicon layer and the dielectric layer that covers described gate oxide and described shallow channel isolation area successively;
On described dielectric layer, form second polysilicon layer;
Described second polysilicon layer is carried out cmp, up to the described dielectric layer of exposed portions serve;
Utilize hydrofluoric acid solution to remove the described dielectric layer that exposes;
Described second polysilicon layer of dry etching, the remaining described low temperature oxide layer of wet etching then, up to exposing described first polysilicon layer, remaining described first polysilicon layer is a multi-crystal silicon floating bar.
Preferably, in the manufacture method of described autoregistration multi-crystal silicon floating bar, the thickness of described first polysilicon layer is 300 dusts.
Preferably, in the manufacture method of described autoregistration multi-crystal silicon floating bar, the thickness of described second polysilicon layer is 1900 dusts.
Preferably, in the manufacture method of described autoregistration multi-crystal silicon floating bar, the thickness of described gate oxide is 90 dusts.
Preferably, in the manufacture method of described autoregistration multi-crystal silicon floating bar, the thickness of described dielectric layer is 200 dusts.
Preferably, in the manufacture method of described autoregistration multi-crystal silicon floating bar, described dielectric layer is oxide skin(coating) or silicon nitride layer.
First polysilicon layer of the present invention finally forms multi-crystal silicon floating bar, in order to guarantee the uniformity of multi-crystal silicon floating bar, in manufacturing process, the dielectric layer and second polysilicon layer on described first polysilicon layer, have been formed again, by described second polysilicon layer of cmp, up to the described low temperature oxide layer of exposed portions serve, described low temperature oxide layer of subsequent etch and described second polysilicon layer, last remaining described first polysilicon layer be multi-crystal silicon floating bar, because formed multi-crystal silicon floating bar adopts the boiler tube growth to form, and therefore has good uniformity.
Description of drawings
Fig. 1 to Fig. 4 is a kind of manufacture method of existing multi-crystal silicon floating bar;
Fig. 5 to Fig. 9 is the manufacture method of the existing multi-crystal silicon floating bar of the present invention.
Embodiment
In order to make protection content of the present invention clear more understandable,, preferred embodiment of the present invention is described below in conjunction with Figure of description.
Fig. 5 to Fig. 9 is the manufacture method of the existing multi-crystal silicon floating bar of the present invention.To shown in Figure 9, the manufacture method of autoregistration multi-crystal silicon floating bar of the present invention comprises the steps: with reference to Fig. 5
Referring to shown in Figure 5, polysilicon substrate 202 is provided, be formed with at least two shallow channel isolation areas 204 on it, between described shallow channel isolation area 204, be formed with groove;
Referring to shown in Figure 6, the channel bottom between described shallow channel isolation area 204 forms gate oxide 206, and forms first polysilicon layer 208 and the dielectric layer 210 that covers described gate oxide 206 and described shallow channel isolation area 204 successively;
Referring to shown in Figure 7, on described dielectric layer 210, form second polysilicon layer 212;
Referring to shown in Figure 8, described second polysilicon layer 212 is carried out cmp, up to the described dielectric layer 210 of exposed portions serve;
Utilize hydrofluoric acid solution to remove the described dielectric layer that exposes 210;
Described second polysilicon layer 212 of dry etching, the remaining described low temperature oxide layer 210 of wet etching then, up to exposing described first polysilicon layer 208, remaining described first polysilicon layer 208 is a multi-crystal silicon floating bar, referring to shown in Figure 9.
Preferably, in the manufacture method of described autoregistration multi-crystal silicon floating bar, the thickness of described first polysilicon layer 208 is 300 dusts.
Preferably, in the manufacture method of described autoregistration multi-crystal silicon floating bar, the thickness of described second polysilicon layer 212 is 1900 dusts.
Preferably, in the manufacture method of described autoregistration multi-crystal silicon floating bar, the thickness of described gate oxide 206 is 90 dusts.Described gate oxide 206 can be but be not limited to silica.
Preferably, in the manufacture method of described autoregistration multi-crystal silicon floating bar, the thickness of described dielectric layer 210 is 200 dusts.Described dielectric layer 210 can be but be not limited to various medium of oxides, also can be the medium of silicon nitride and so on.
Experiment showed, the manufacture method of utilizing autoregistration multi-crystal silicon floating bar of the present invention, the uniformity of the multi-crystal silicon floating bar of making is fine, and is all fine in the consistency of the outer peripheral areas (Box) of the central area of wafer and fringe region and semiconductor device.
Claims (6)
1. the manufacture method of an autoregistration multi-crystal silicon floating bar comprises the steps:
The polysilicon substrate is provided, is formed with at least two shallow channel isolation areas on it, between described shallow channel isolation area, be formed with groove;
Channel bottom between described shallow channel isolation area forms gate oxide, and forms first polysilicon layer and the dielectric layer that covers described gate oxide and described shallow channel isolation area successively;
On described dielectric layer, form second polysilicon layer;
Described second polysilicon layer is carried out cmp, up to the described dielectric layer of exposed portions serve;
Utilize hydrofluoric acid solution to remove the described dielectric layer that exposes;
Described second polysilicon layer of dry etching, the remaining low temperature oxide layer of wet etching then, up to exposing described first polysilicon layer, remaining described first polysilicon layer is a multi-crystal silicon floating bar.
2. the manufacture method of autoregistration multi-crystal silicon floating bar as claimed in claim 1 is characterized in that, the thickness of described first polysilicon layer is 300 dusts.
3. the manufacture method of autoregistration multi-crystal silicon floating bar as claimed in claim 1 is characterized in that, the thickness of described second polysilicon layer is 1900 dusts.
4. the manufacture method of autoregistration multi-crystal silicon floating bar as claimed in claim 1 is characterized in that, the thickness of described gate oxide is 90 dusts.
5. the manufacture method of autoregistration multi-crystal silicon floating bar as claimed in claim 1 is characterized in that, the thickness of described dielectric layer is 200 dusts.
6. as the manufacture method of any described autoregistration multi-crystal silicon floating bar among the claim 1-5, it is characterized in that described dielectric layer is oxide skin(coating) or silicon nitride layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201010123730.2A CN101800172B (en) | 2010-03-12 | 2010-03-12 | A kind of manufacture method of self-aligned polysilicon floating gate |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201010123730.2A CN101800172B (en) | 2010-03-12 | 2010-03-12 | A kind of manufacture method of self-aligned polysilicon floating gate |
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| CN101800172A true CN101800172A (en) | 2010-08-11 |
| CN101800172B CN101800172B (en) | 2016-03-02 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102610504A (en) * | 2012-03-14 | 2012-07-25 | 上海华力微电子有限公司 | Method for preparing floating gate |
| CN107689325A (en) * | 2016-08-05 | 2018-02-13 | 北大方正集团有限公司 | Polysilicon, which returns, carves processing method |
| CN108899321A (en) * | 2018-07-20 | 2018-11-27 | 上海华虹宏力半导体制造有限公司 | The manufacturing method of flash memory |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101083209A (en) * | 1999-02-23 | 2007-12-05 | 西利康存储技术股份有限公司 | Flash memory cell with self-aligned gates and fabrication process |
-
2010
- 2010-03-12 CN CN201010123730.2A patent/CN101800172B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101083209A (en) * | 1999-02-23 | 2007-12-05 | 西利康存储技术股份有限公司 | Flash memory cell with self-aligned gates and fabrication process |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102610504A (en) * | 2012-03-14 | 2012-07-25 | 上海华力微电子有限公司 | Method for preparing floating gate |
| CN107689325A (en) * | 2016-08-05 | 2018-02-13 | 北大方正集团有限公司 | Polysilicon, which returns, carves processing method |
| CN108899321A (en) * | 2018-07-20 | 2018-11-27 | 上海华虹宏力半导体制造有限公司 | The manufacturing method of flash memory |
| CN108899321B (en) * | 2018-07-20 | 2020-09-15 | 上海华虹宏力半导体制造有限公司 | Method for manufacturing flash memory |
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| CN101800172B (en) | 2016-03-02 |
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