CN101793998A - Waveguide grating coupler with distributed Bragg reflector and manufacturing method thereof - Google Patents
Waveguide grating coupler with distributed Bragg reflector and manufacturing method thereof Download PDFInfo
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Abstract
The invention relates to a waveguide grating coupler with a distributed Bragg reflector. The coupler is made of silicon materials on an insulator and comprises a silicon substrate, a limiting layer, a top silicon layer and an optical fiber, wherein the limiting layer is made on the silicon substrate; the top silicon layer is made on the limiting layer; a diffraction grating is made on the surface of the top silicon layer; a reflection grating is made at one side of the diffraction grating; the other side of the diffraction grating is provided with a tapered waveguide with the length of about 80 micrometers; a submicrometer waveguide is arranged on the connecting point of the diffraction grating and the tapered waveguide; and one end of the optical fiber is close to the diffraction grating on the top silicon layer.
Description
Technical field
The present invention relates to the photonic device technical field, is a kind of grating waveguide coupling mechanism, and the structure of this grating coupler can effectively reduce the coupling loss of optical fiber and waveguide, is easy to integratedly, is widely used in optical communication, during the silica-based light of chip optical interconnection and high speed is integrated.
Background technology
Since the sixties in 20th century, photoelectron integrated (OEIC) has obtained significant progress.The main flow trend of integrated circuit development is exactly the miniaturization of integrated system.Be used for numerous waveguide materials of communication band, the SOI material with its impayable cost advantage, technical maturity, with advantage such as IC process compatible, make it to become one of the most competitive material of realizing that optics is integrated and electronics is integrated.But,, be not applied to practical communication system for a long time on a large scale though the waveguide of SOI sub-micron can realize a lot of compact structures and outstanding function.This is less than 1 μ m because of the mode spot-size in the waveguide; and the mode spot-size in the optical fiber is 8-10 μ m; the mismatch of mode spot-size and effective refractive index will cause the appearance of radiation mode and backreflection between the two, and light enters this small sized waveguide from optical fiber and brings very big loss through regular meeting.Therefore in the integrated optoelectronics field, coupled problem between the two is a long-term challenging problem.
Present silica-based optical waveguide coupled method mainly comprises the tapered transmission line coupling, oppositely tapered transmission line coupling, prism-coupled, gradually changed refractive index waveguide-coupled etc.Widespread use is the tapered transmission line coupling mechanism in optical fiber and large scale waveguide-coupled.Drop to below the micron yet work as waveguide dimensions, this coupling mechanism just brings very big coupling loss.And when this coupling mechanism was connected with optical fiber, because the refractive index mismatch of the two, special anti-reflecting layer reduced strong backreflection also to need to make one deck.Bring trouble to making.Recently, oppositely taper coupler more and more attracts much attention.Yet this coupling mechanism manufacture difficulty is very big, and polarization correlated remarkable.
Waveguide optical grating is compared advantages such as having surfacing, be not subjected to refractive index restriction, volume is little as coupling mechanism with prism coupler.And it is as a kind of vertical coupled method, and side-coupledly compare and have the following advantages with common: (1) does not need scribing and end face polishing, has not only reduced processing step, has also avoided because the end face loss that the scribing polishing causes; (2) the coupling regime size of grating coupler is suitable with optical fiber core diameter size, and all about 10 μ m, and present waveguide dimensions is many in nanometer scale, be difficult to the optical fiber align with micron dimension, so grating coupler has very big advantage on alignment tolerance; (3) the side-coupled time can only be polished a side from scribing and passed through, and grating coupler makes the output and the input that can realize light at chip Anywhere, has opened up the new mode of a kind of chip testing and design.Yet grating coupler also is faced with the lower problem of coupling efficiency, though can increase coupling efficiency by make methods such as metallic mirror in grating bottom, these method complex process, and not with the CMOS process compatible.Studies show that now the Waveguide grating coupler that has distribution Bragg reflector that the present invention proposes can greatly improve the coupling efficiency of grating coupler, its making is also simple relatively, and complete and CMOS process compatible.
Summary of the invention
The object of the present invention is to provide and a kind ofly can realize vertical coupled high efficiency and broad band coupling mechanism and preparation method thereof, it can realize the coupling between optical fiber and the sub-micron waveguide; Can obtain bigger coupling efficiency, and have bigger alignment tolerance.
For achieving the above object, technical solution of the present invention is:
The invention provides a kind of Waveguide grating coupler that has distribution Bragg reflector, described coupling mechanism adopts the silicon materials on the insulator, comprising:
One silicon substrate;
One limiting layer, this limiting layer is produced on the silicon substrate;
One top silicon layer, this top silicon layer is produced on the limiting layer, is manufactured with diffraction grating on the surface of this top silicon layer, side at diffraction grating is manufactured with reflection grating, opposite side at diffraction grating is a tapered transmission line, and this tapered transmission line length is greater than 80 μ m, with the tapered transmission line junction be the sub-micron waveguide;
One optical fiber, an end of this optical fiber is near the diffraction grating on the silicon layer of top.
The thickness of wherein said top silicon layer is less than 1 μ m, and the thickness of limiting layer is greater than 500nm.
Wherein said silicon substrate, limiting layer and top silicon layer constitute the SOI sheet.
The area of wherein said diffraction grating is 80-140 μ m
2, the area of reflection grating is 20-40 μ m
2, being applicable to that the photon of compact conformation is integrated, the etching depth of diffraction grating and reflection grating is 100-500nm, width is 10-14 μ m.
Wherein said diffraction grating and reflection grating are the uniform period grating of sub-micrometer scale, and diffraction grating has 10-40 periodicity, and dutycycle is 0.3-0.8, and the cycle of reflection grating is half of cycle of diffraction grating 3, and dutycycle is 0.5.
The present invention also provides a kind of method for making that has the Waveguide grating coupler of distribution Bragg reflector, comprises the steps:
Step 1: on silicon substrate, make limiting layer and top silicon layer successively, form the SOI sheet;
Step 2: clean the top silicon layer on SOI sheet surface, oven dry;
Step 3: the SOI sheet of oven dry is put in the sol evenning machine spin coating photoresist layer, oven dry;
Step 4: adopt electron beam exposure technology to expose, form the figure of tapered transmission line and sub-micron waveguide on SOI sheet surface;
Step 5: adopt the inductively coupled plasma etching, form tapered transmission line and sub-micron waveguide;
Step 6: the SOI sheet that will be manufactured with tapered transmission line and sub-micron waveguide is put in the sol evenning machine, spin coating photoresist layer, oven dry;
Step 7: adopt electron beam exposure technology to expose, form the figure of diffraction grating and reflection grating at an end surfaces of tapered transmission line;
Step 8: adopt the inductively coupled plasma etching, form diffraction grating and reflection grating;
Step 9: the SOI sheet that etching the is finished cleaning of removing photoresist;
Step 10 a: optical fiber is placed near the diffraction grating place on the silicon layer of top.
In the wherein said step 3, photoresist baking 8-14 minute on baking sheet machine, under 100-140 ℃ of temperature.
The thickness of wherein said top silicon layer is less than 1 μ m, and the thickness of limiting layer is greater than 500nm.
The area of wherein said optical grating diffraction grating is 80-140 μ m
2, the area of reflection grating is 20-40 μ m
2, being applicable to that the photon of compact conformation is integrated, the etching depth of diffraction grating and reflection grating is 100-500nm, width is 10-14 μ m.
Wherein said diffraction grating and reflection grating are the uniform period grating of sub-micrometer scale, and diffraction grating has 10-40 periodicity, and dutycycle is 0.3-0.8, and the cycle of reflection grating is half of cycle of diffraction grating, and dutycycle is 0.5.
Description of drawings
Below in conjunction with drawings and Examples structure of the present invention and feature are described in further detail, wherein:
Fig. 1 is the structural representation that has the Waveguide grating coupler of distribution Bragg reflector;
Fig. 2 is the schematic cross-section that has the Waveguide grating coupler of distribution Bragg reflector;
Fig. 3 is for making the process flow diagram of the grating part in the Waveguide grating coupler that has distribution Bragg reflector illustrated in figures 1 and 2.
Embodiment
See also Figure 1 and Figure 2, the invention provides a kind of Waveguide grating coupler that has distribution Bragg reflector, described coupling mechanism adopts the silicon materials on the insulator, comprising:
One silicon substrate 8;
One limiting layer 7, this limiting layer 7 is produced on the silicon substrate 8, and the thickness of limiting layer 7 can effectively stop the leakage of light to silicon substrate 8 greater than 500nm;
One top silicon layer 6, this top silicon layer 6 is produced on the limiting layer 7, be manufactured with diffraction grating 3 on the surface of this top silicon layer 6, side at diffraction grating 3 is manufactured with reflection grating 4, opposite side at diffraction grating 3 is a tapered transmission line 2, this tapered transmission line 2 is greater than 80 μ m, can realize harmless transmission in theory, with tapered transmission line 2 junctions be sub-micron waveguide 1; The area of diffraction grating 3 is 80-140 μ m
2, the area of reflection grating 4 is 20-40 μ m
2The photon that is applicable to compact conformation is integrated, diffraction grating 3 and reflection grating 4 are the uniform period grating of sub-micrometer scale, etching depth is 100-500nm, width is 10-14 μ m, and diffraction grating 3 has 10-40 periodicity, and dutycycle is 0.3-0.8, the cycle of reflection grating 4 is half of cycle of diffraction grating 3, and dutycycle is 0.5; Light in the sub-micron waveguide 1 enters the grating waveguide district through tapered transmission line 2, diffracted grating 3 diffraction, diffraction light is divided into two parts up and down, and the diffraction light that wherein makes progress is received by single-mode fiber 5, downward diffraction light part after 7 reflections of SOI limiting layer more upwards outgoing received by optical fiber 5.The transmitted light of diffraction grating 3 grating 4 that is reflected reflects back diffraction once more, diffraction grating 3 is the odd-multiple of the semiperiod of reflection grating 4 with the spacing of reflection grating 4, precision need be controlled at 20-40nm, make reflected light disappear mutually with the transmission interference of light in the waveguide, reduce reflected light, increase the upwards luminous energy of diffraction like this to tapered transmission line 2 directions.
One optical fiber 5, an end of this optical fiber 1 is near the diffraction grating 3 on the top silicon layer 6, and the axis of optical fiber 5 can be parallel fully with diffraction grating 3 surface normals, perhaps tilts less than 15 ° angle.
Wherein said silicon substrate 8, limiting layer 7 and top silicon layer 6 constitute the SOI sheet.
It is shown in Figure 3 in conjunction with consulting please to consult Fig. 1, Fig. 2 again, the invention provides a kind of method for making that has the Waveguide grating coupler of distribution Bragg reflector, comprises the steps:
Step 1: on silicon substrate 8, make limiting layer 7 and top silicon layer 6 (among Fig. 2) successively, form the SOI sheet;
Step 2: clean the top silicon layer 6 on SOI sheet surface, oven dry;
Step 3: the SOI sheet of oven dry is put in the sol evenning machine, with 2000-5000 rpm rotating speed spin coating photoresist layer, oven dry;
Step 4: adopt electron beam exposure technology to expose, form the figure of tapered transmission line 2 and sub-micron waveguide 1 on SOI sheet surface;
Step 5: adopt the inductively coupled plasma etching, form tapered transmission line 2 and sub-micron waveguide 1 (among Fig. 1);
Step 6: the SOI sheet that will be manufactured with tapered transmission line 2 and sub-micron waveguide 1 is put in the sol evenning machine, with 2000-5000 rpm rotating speed spin coating photoresist layer 9, dries by the fire 10-20 minute, and the thick about 200-500nm of photoresist layer 9 glue is shown in Fig. 3 (a);
Step 7: adopt electron beam exposure technology to expose, form the figure of diffraction grating 3 and reflection grating 4, shown in Fig. 3 (b) at an end surfaces of tapered transmission line 2;
Step 8: adopt the inductively coupled plasma etching, form diffraction grating 3 and reflection grating 4, shown in Fig. 3 (c);
Step 9: the SOI sheet that etching the is finished cleaning of removing photoresist, shown in Fig. 3 (d);
Step 10 a: optical fiber 5 is placed near diffraction grating 3 places on the top silicon layer 6.
Wherein said silicon substrate 8, limiting layer 7 and top silicon layer 6 constitute the SOI sheet.
The present invention is a kind of, and to have the method for making of waveguide in the Waveguide grating coupler of distribution Bragg reflector the same with grating, and just etching depth is different.If the waveguide of design is a ridge waveguide, and the etching depth of ridge district design is identical with grating, and then waveguide and grating coupler etching formation simultaneously can be avoided the alignment error like this.
The above; only be the embodiment among the present invention, but protection scope of the present invention is not limited thereto, anyly is familiar with the people of this technology in the disclosed technical scope of the present invention; the conversion that can expect easily or replacement all should be encompassed in of the present invention comprising within the scope.Therefore, protection scope of the present invention should be as the criterion with the protection domain of claims.
Claims (10)
1. Waveguide grating coupler that has distribution Bragg reflector, described coupling mechanism adopts the silicon materials on the insulator, comprising:
One silicon substrate;
One limiting layer, this limiting layer is produced on the silicon substrate;
One top silicon layer, this top silicon layer is produced on the limiting layer, is manufactured with diffraction grating on the surface of this top silicon layer, side at diffraction grating is manufactured with reflection grating, opposite side at diffraction grating is a tapered transmission line, and this tapered transmission line length is greater than 80 μ m, with the tapered transmission line junction be the sub-micron waveguide;
One optical fiber, an end of this optical fiber is near the diffraction grating on the silicon layer of top.
2. the Waveguide grating coupler that has distribution Bragg reflector according to claim 1, the thickness of wherein said top silicon layer is less than 1 μ m, and the thickness of limiting layer is greater than 500nm.
3. the Waveguide grating coupler that has distribution Bragg reflector according to claim 1, wherein said silicon substrate, limiting layer and top silicon layer constitute the SOI sheet.
4. the Waveguide grating coupler that has distribution Bragg reflector according to claim 1, the area of wherein said diffraction grating are 80-140 μ m
2, the area of reflection grating is 20-40 μ m
2, being applicable to that the photon of compact conformation is integrated, the etching depth of diffraction grating and reflection grating is 100-500nm, width is 10-14 μ m.
5. according to claim 1 or the 4 described Waveguide grating couplers that have distribution Bragg reflector, wherein said diffraction grating and reflection grating are the uniform period grating of sub-micrometer scale, diffraction grating has 10-40 periodicity, dutycycle is 0.3-0.8, the cycle of reflection grating is half of cycle of diffraction grating 3, and dutycycle is 0.5.
6. a method for making that has the Waveguide grating coupler of distribution Bragg reflector comprises the steps:
Step 1: on silicon substrate, make limiting layer and top silicon layer successively, form the SOI sheet;
Step 2: clean the top silicon layer on SOI sheet surface, oven dry;
Step 3: the SOI sheet of oven dry is put in the sol evenning machine spin coating photoresist layer, oven dry;
Step 4: adopt electron beam exposure technology to expose, form the figure of tapered transmission line and sub-micron waveguide on SOI sheet surface;
Step 5: adopt the inductively coupled plasma etching, form tapered transmission line and sub-micron waveguide;
Step 6: the SOI sheet that will be manufactured with tapered transmission line and sub-micron waveguide is put in the sol evenning machine, spin coating photoresist layer, oven dry;
Step 7: adopt electron beam exposure technology to expose, form the figure of diffraction grating and reflection grating at an end surfaces of tapered transmission line;
Step 8: adopt the inductively coupled plasma etching, form diffraction grating and reflection grating;
Step 9: the SOI sheet that etching the is finished cleaning of removing photoresist;
Step 10 a: optical fiber is placed near the diffraction grating place on the silicon layer of top.
7. the method for making that has the Waveguide grating coupler of distribution Bragg reflector according to claim 6, in the wherein said step 3, photoresist baking 8-14 minute on baking sheet machine, under 100-140 ℃ of temperature.
8. the method for making that has the Waveguide grating coupler of distribution Bragg reflector according to claim 6, the thickness of wherein said top silicon layer is less than 1 μ m, and the thickness of limiting layer is greater than 500nm.
9. the method for making that has the Waveguide grating coupler of distribution Bragg reflector according to claim 6, the area of wherein said optical grating diffraction grating are 80-140 μ m
2, the area of reflection grating is 20-40 μ m
2, being applicable to that the photon of compact conformation is integrated, the etching depth of diffraction grating and reflection grating is 100-500nm, width is 10-14 μ m.
10. according to claim 6 or the 9 described method for makings that have the Waveguide grating coupler of distribution Bragg reflector, wherein said diffraction grating and reflection grating are the uniform period grating of sub-micrometer scale, diffraction grating has 10-40 periodicity, dutycycle is 0.3-0.8, the cycle of reflection grating is half of cycle of diffraction grating, and dutycycle is 0.5.
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| CN101982796A (en) * | 2010-09-15 | 2011-03-02 | 中国科学院半导体研究所 | Silicon-on-insulator waveguide grating coupler and manufacturing method thereof |
| CN102253459A (en) * | 2011-06-24 | 2011-11-23 | 浙江东晶光电科技有限公司 | Silicon-based waveguide grating coupler on insulator and preparation method thereof |
| CN102436028A (en) * | 2011-12-23 | 2012-05-02 | 宋齐望 | Planar optical waveguide structure and manufacturing method thereof |
| CN102478686A (en) * | 2010-11-26 | 2012-05-30 | 中国科学院微电子研究所 | Grating coupler and coupling structure and packaging structure of grating coupler and optical fiber |
| CN102540349A (en) * | 2012-01-18 | 2012-07-04 | 中北大学 | Packaging method for high-efficiency vertical coupling interconnection of optical fiber and optical waveguide chip |
| CN102565955A (en) * | 2012-01-16 | 2012-07-11 | 中国科学院半导体研究所 | Electric tunable grating coupler |
| CN103033877A (en) * | 2012-12-26 | 2013-04-10 | 东南大学 | Waveguide coupler with echelon grating mirror and preparation method thereof |
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| CN107924027A (en) * | 2015-06-12 | 2018-04-17 | 加利福尼亚太平洋生物科学股份有限公司 | Integrated target spot waveguide device and system for optical coupling |
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-
2010
- 2010-03-10 CN CN 201010121744 patent/CN101793998A/en active Pending
Non-Patent Citations (3)
| Title |
|---|
| 《中国博士学位论文全文数据库》 20091115 冯俊波 硅基微纳光栅耦合器件及其制备技术研究 第5页第5行至第13行，第13页第15行至第17行，第41页第11行至第12行，第44页第9行至第16行，第55页第3行至第4行，第58页第7行至第9行，第102页第4行至第10行、附图3.15，附图3.5，表4.1，表5.1 1-10 , 2 * |
| 《半导体光电》 20090630 冉启江等 高阶布拉格光栅在SOI脊形波导上的光刻制作 381-384 1-10 , 2 * |
| 《激光与红外》 20070131 刘艳等 SOI基光耦合器研究进展 18-20 1-10 , 2 * |
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| CN103890624A (en) * | 2011-10-21 | 2014-06-25 | 惠普发展公司，有限责任合伙企业 | Grating couplers with deep-groove non-uniform gratings |
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| CN102565955A (en) * | 2012-01-16 | 2012-07-11 | 中国科学院半导体研究所 | Electric tunable grating coupler |
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| CN103033877A (en) * | 2012-12-26 | 2013-04-10 | 东南大学 | Waveguide coupler with echelon grating mirror and preparation method thereof |
| CN103033881A (en) * | 2012-12-31 | 2013-04-10 | 东南大学 | On-chip periodic variation refractive index lens photon chip three-dimensional coupler and preparation method thereof |
| CN103197386A (en) * | 2013-04-01 | 2013-07-10 | 北京工业大学 | Vertical coupling grating coupler bonded by metal and manufacturing method thereof |
| CN104570202A (en) * | 2013-10-25 | 2015-04-29 | 光引研创股份有限公司 | Optical device |
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| CN104570203A (en) * | 2013-10-25 | 2015-04-29 | 光引研创股份有限公司 | Optical device |
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| CN106461865A (en) * | 2014-03-18 | 2017-02-22 | 华为技术有限公司 | Grating coupler and manufacturing method therefor |
| CN106154412A (en) * | 2015-03-30 | 2016-11-23 | 青岛海信宽带多媒体技术有限公司 | Bonder and the chip of light waveguide of this bonder of application |
| CN106154412B (en) * | 2015-03-30 | 2019-08-13 | 青岛海信宽带多媒体技术有限公司 | The chip of light waveguide of coupler and the application coupler |
| CN107924027A (en) * | 2015-06-12 | 2018-04-17 | 加利福尼亚太平洋生物科学股份有限公司 | Integrated target spot waveguide device and system for optical coupling |
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| CN110376592A (en) * | 2019-07-23 | 2019-10-25 | 吉林大学 | A kind of optical phased array laser radar of acousto-optic regulation |
| CN111106531A (en) * | 2019-12-20 | 2020-05-05 | 中国电子科技集团公司第五十五研究所 | Preparation method of silicon-based nanoscale curved apodized grating |
| CN115437061A (en) * | 2022-11-07 | 2022-12-06 | 之江实验室 | Grating coupler and simulation manufacturing method, device, medium and equipment thereof |
| CN115437061B (en) * | 2022-11-07 | 2023-02-17 | 之江实验室 | Grating coupler and simulation manufacturing method, device, medium and equipment thereof |
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