CN101792896B - 溅射设备及制造电子器件的方法 - Google Patents
溅射设备及制造电子器件的方法 Download PDFInfo
- Publication number
- CN101792896B CN101792896B CN2009102663592A CN200910266359A CN101792896B CN 101792896 B CN101792896 B CN 101792896B CN 2009102663592 A CN2009102663592 A CN 2009102663592A CN 200910266359 A CN200910266359 A CN 200910266359A CN 101792896 B CN101792896 B CN 101792896B
- Authority
- CN
- China
- Prior art keywords
- target
- rotating member
- terminal
- rotation
- feed terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008-327696 | 2008-12-24 | ||
| JP2008327696A JP5289035B2 (ja) | 2008-12-24 | 2008-12-24 | スパッタリング装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101792896A CN101792896A (zh) | 2010-08-04 |
| CN101792896B true CN101792896B (zh) | 2012-09-26 |
Family
ID=42264457
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009102663592A Active CN101792896B (zh) | 2008-12-24 | 2009-12-24 | 溅射设备及制造电子器件的方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20100155228A1 (enExample) |
| JP (1) | JP5289035B2 (enExample) |
| CN (1) | CN101792896B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102268647A (zh) * | 2011-06-28 | 2011-12-07 | 黄峰 | 旋转靶用驱动端头装置 |
| US20160049279A1 (en) * | 2014-08-14 | 2016-02-18 | Allied Techfinders Co., Ltd. | Plasma device |
| CN111719123B (zh) * | 2019-03-21 | 2024-08-02 | 广东太微加速器有限公司 | 组合式靶件 |
| JP7437525B2 (ja) * | 2020-10-08 | 2024-02-22 | 株式会社アルバック | 回転式カソードユニット用の駆動ブロック |
| JP2023069790A (ja) * | 2021-11-08 | 2023-05-18 | 株式会社シンクロン | スパッタ成膜装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0602526A2 (en) * | 1992-12-17 | 1994-06-22 | Siemens Aktiengesellschaft | A decoded-source sense amplifier with special column select driver voltage |
| CN1134469A (zh) * | 1995-01-23 | 1996-10-30 | 美国Boc氧气集团有限公司 | 圆柱形磁控管的屏蔽结构 |
| CN101440475A (zh) * | 2007-11-19 | 2009-05-27 | 小岛压力加工工业株式会社 | 基片支承装置及包含该基片支承装置的溅射设备 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62111770U (enExample) * | 1985-12-27 | 1987-07-16 | ||
| JPH1192924A (ja) * | 1997-09-16 | 1999-04-06 | Raiku:Kk | スパッタリング装置 |
| JP2003147519A (ja) * | 2001-11-05 | 2003-05-21 | Anelva Corp | スパッタリング装置 |
-
2008
- 2008-12-24 JP JP2008327696A patent/JP5289035B2/ja active Active
-
2009
- 2009-12-16 US US12/639,220 patent/US20100155228A1/en not_active Abandoned
- 2009-12-24 CN CN2009102663592A patent/CN101792896B/zh active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0602526A2 (en) * | 1992-12-17 | 1994-06-22 | Siemens Aktiengesellschaft | A decoded-source sense amplifier with special column select driver voltage |
| CN1134469A (zh) * | 1995-01-23 | 1996-10-30 | 美国Boc氧气集团有限公司 | 圆柱形磁控管的屏蔽结构 |
| CN101440475A (zh) * | 2007-11-19 | 2009-05-27 | 小岛压力加工工业株式会社 | 基片支承装置及包含该基片支承装置的溅射设备 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2010150579A (ja) | 2010-07-08 |
| JP5289035B2 (ja) | 2013-09-11 |
| US20100155228A1 (en) | 2010-06-24 |
| CN101792896A (zh) | 2010-08-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6238288B2 (ja) | 堆積装置および堆積の非対称性を低減させる方法 | |
| KR100499763B1 (ko) | 플라즈마 에칭장치 | |
| US7977255B1 (en) | Method and system for depositing a thin-film transistor | |
| CN101792896B (zh) | 溅射设备及制造电子器件的方法 | |
| KR101132451B1 (ko) | 기판 처리용 장치 | |
| US8956512B2 (en) | Magnetron sputtering apparatus and film forming method | |
| KR100674625B1 (ko) | 플라즈마 처리장치 및 플라즈마 처리방법 | |
| CN102918175B (zh) | 具有旋转磁铁组件和中央馈送射频功率的物理气相沉积腔室 | |
| CN1612314A (zh) | 静电吸附装置、等离子体处理装置及等离子体处理方法 | |
| US8888951B2 (en) | Plasma processing apparatus and electrode for same | |
| EP2302092A1 (en) | Bias sputtering apparatus | |
| US8877557B2 (en) | Method of manufacturing organic light emitting display device | |
| CN1896300A (zh) | 用于大面积衬底的低压溅射 | |
| KR20140099340A (ko) | 스퍼터링 장치 및 산화물 반도체 물질의 스퍼터링 방법 | |
| KR102177209B1 (ko) | 스퍼터링 장치 및 이를 이용한 박막 형성 방법 | |
| US6922325B2 (en) | Electrostatic attraction mechanism, surface processing method and surface processing device | |
| US11195700B2 (en) | Etching apparatus | |
| KR0132387B1 (ko) | 반도체 소자용 제조 장치 | |
| JP2009235581A (ja) | 高周波スパッタリング装置 | |
| JP2001217304A (ja) | 基板ステージ、それを用いた基板処理装置および基板処理方法 | |
| JP4481921B2 (ja) | プラズマプロセス方法およびプラズマプロセス装置 | |
| JP3980260B2 (ja) | プラズマ処理装置 | |
| JP4184846B2 (ja) | イオン注入装置用イオン発生装置 | |
| CN104342620A (zh) | 沉积装置和使用该沉积装置制造显示装置的方法 | |
| CN120193239A (zh) | Pvd设备和方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |