CN101770999A - External connection heat radiation cap encapsulation structure of positive installation lock hole heat radiation block projected post of base island embedded chip - Google Patents

External connection heat radiation cap encapsulation structure of positive installation lock hole heat radiation block projected post of base island embedded chip Download PDF

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Publication number
CN101770999A
CN101770999A CN 201010112834 CN201010112834A CN101770999A CN 101770999 A CN101770999 A CN 101770999A CN 201010112834 CN201010112834 CN 201010112834 CN 201010112834 A CN201010112834 A CN 201010112834A CN 101770999 A CN101770999 A CN 101770999A
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CN
China
Prior art keywords
chip
heat radiation
lock hole
radiating
cap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN 201010112834
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Chinese (zh)
Inventor
王新潮
梁志忠
顾炯炯
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JCET Group Co Ltd
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Jiangsu Changjiang Electronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangsu Changjiang Electronics Technology Co Ltd filed Critical Jiangsu Changjiang Electronics Technology Co Ltd
Priority to CN 201010112834 priority Critical patent/CN101770999A/en
Publication of CN101770999A publication Critical patent/CN101770999A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73215—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The invention relates to an external connection heat radiation cap encapsulation structure of a positive installation lock hole heat radiation block projected post of a base island embedded chip, which comprises a chip (3), a metal base island (1), a metal inner pin (4), a metal wire (5), a first conductive or nonconductive heat-conductive adhesive material (2) and an insulated plastic encapsulation body (8), wherein the metal base island (1) is embedded into the plastic encapsulation body (8), a heat radiation block (7) is arranged above the chip (3) and is provided with a lock hole (7.1), a second conductive or nonconductive heat-conductive adhesive material (6) is embedded and arranged between the heat radiation block (7) and the chip (3), a heat radiation cap (11) is arranged above the heat radiation block (7) and is in insertion connection with the heat radiation block (7) through a projected post (11.1), and the heat radiation cap (11) is sheathed on the plastic encapsulation body. The encapsulation structure of the invention can provide strong heat radiation capability, the heat of the chip can be fast conducted outside the encapsulation body, and the fast aging of the service life of the chip, or even the burning fault or the burning damage of the chip can be avoided.

Description

The external radiating cap encapsulating structure of base island embedded chip formal dress lock hole radiating block projection
(1) technical field
The present invention relates to the external radiating cap encapsulating structure of a kind of base island embedded chip formal dress lock hole radiating block projection.Belong to the semiconductor packaging field.
(2) background technology
The radiating mode of traditional Chip Packaging form mainly be to have adopted the Metal Substrate island of chip below as heat radiation conduction instrument or approach, and there is following not enough point in the heat radiation of this conventional package mode conduction:
1, Metal Substrate island volume is too little
The Metal Substrate island is in the conventional package form, in order to pursue the reliability safety of packaging body, nearly all adopted the Metal Substrate island to be embedded in the packaging body, and in limited packaging body, to imbed the interior pin (as shown in Figures 1 and 2) of metal of Metal Substrate island and signal, power supply conduction usefulness simultaneously, very the little so effective area on Metal Substrate island and volume just seem, and the function of the heat radiation of high heat also will be served as in the Metal Substrate island simultaneously, will seem deficiency more.
2, baried type Metal Substrate island (as shown in Figures 1 and 2)
The Metal Substrate island is in the conventional package form, in order to pursue the reliability safety of packaging body, nearly all adopted the Metal Substrate island to be embedded in the packaging body, and the Metal Substrate island is about dependence or four fine support bars in corner fix or support metal Ji Dao, also because the characteristic of this fine support bar, the heat that has caused the Metal Substrate island to be absorbed from the chip, can't conduct out from fine support bar fast, so the heat of chip can't or be transmitted to the packaging body external world fast, caused the life-span quick aging of chip even burn or burnt out.
3, Metal Substrate island exposed type (as shown in Figures 3 and 4)
Though expose on the Metal Substrate island, can provide also will good heat-sinking capability than the heat sinking function of baried type, because the volume on Metal Substrate island and area still very little in packaging body, so heat dissipation capability can be provided, still very limited.
(3) summary of the invention
The objective of the invention is to overcome above-mentioned deficiency, providing a kind of can provide heat dissipation capability the strong external radiating cap encapsulating structure of base island embedded chip formal dress lock hole radiating block projection.
The object of the present invention is achieved like this: the external radiating cap encapsulating structure of a kind of base island embedded chip formal dress lock hole radiating block projection, include chip, the Metal Substrate island of being carried of chip below, pin in the metal, chip is to the wire of the signal interconnection of the interior pin of metal, the plastic-sealed body of the conduction between chip and the Metal Substrate island or nonconducting heat conduction bonding material I and insulation, the base island embedded plastic packaging material of described metal, above described chip, be provided with radiating block, this radiating block has lock hole, is equipped with conduction or nonconducting heat conduction bonding material II between this radiating block and the described chip; Be provided with radiating cap above described radiating block, protrusion is provided with a projection in the middle of the described radiating cap lower surface, and described radiating cap patches with the radiating block that has lock hole by this projection and is connected; And between this radiating cap and described radiating block and in described lock hole, be equipped with the conduction or nonconducting heat conduction bonding material III; Described radiating cap is sleeved on the plastic-sealed body.
The invention has the beneficial effects as follows:
The present invention passes through addition radiating block above chip, and sets up radiating cap outside plastic-sealed body, serves as the function of the heat radiation of high heat, can provide heat dissipation capability strong, makes the heat of chip can be transmitted to the packaging body external world fast.Can be applied in and make it become height or superelevation heat radiation (High Thermal or Super High Thermal) ability on the packaging body of general packing forms and the packaging technology, can become SHT-FBP/QFN as FBP can become SHT-QFN/BGA and can become SHT-BGA/CSP and can become SHT-CSP ...Avoided the life-span quick aging of chip even burn or burnt out.
(4) description of drawings
Fig. 1 is Metal Substrate island baried type chip-packaging structure schematic diagram in the past.
Fig. 2 is the vertical view of Fig. 1.
Fig. 3 is Metal Substrate island exposed type chip-packaging structure schematic diagram in the past.
Fig. 4 is the vertical view of Fig. 3.
Fig. 5 is the external radiating cap encapsulating structure of a base island embedded chip formal dress lock hole radiating block projection of the present invention schematic diagram.
Reference numeral among the figure:
Pin 4, wire 5, conduction or nonconducting heat conduction bonding material II6, radiating block 7, lock hole 7.1, plastic-sealed body 8, radiating cap 11, projection 11.1, conduction or nonconducting heat conduction bonding material III13 in Metal Substrate island 1, conduction or nonconducting heat conduction bonding material I2, chip 3, the metal.
(5) embodiment
Referring to Fig. 5, Fig. 5 is the external radiating cap encapsulating structure of a base island embedded chip formal dress lock hole radiating block projection of the present invention schematic diagram.As seen from Figure 5, the external radiating cap encapsulating structure of base island embedded chip formal dress lock hole radiating block projection of the present invention, include chip 3, the Metal Substrate island 1 of being carried of chip below, pin 4 in the metal, chip is to the wire 5 of the signal interconnection of the interior pin of metal, the plastic-sealed body 8 of the conduction between chip and the Metal Substrate island or nonconducting heat conduction bonding material I2 and insulation, plastic packaging material 8 is imbedded on described Metal Substrate island 1, above described chip 3, be provided with radiating block 7, this radiating block 7 has lock hole 7.1, is equipped with conduction or nonconducting heat conduction bonding material II6 between this radiating block 7 and the described chip 3; Be provided with radiating cap 11 above described radiating block 7, protrusion is provided with a projection 11.1 in the middle of described radiating cap 11 lower surfaces, and described radiating cap 11 patches with the radiating block 7 that has lock hole by this projection 11.1 and is connected; And be equipped with conduction or nonconducting heat conduction bonding material III13 between this radiating cap 11 and the described radiating block 7 and in described lock hole 7.1; So that the two interfixes or bonds with radiating cap 11 and radiating block 7.Described radiating cap 11 is sleeved on the plastic-sealed body 8.
The material of described radiating block 7 can be copper, aluminium, pottery or alloy etc.
The material of described radiating cap 11 can be copper, aluminium, pottery or alloy etc.

Claims (3)

1. external radiating cap encapsulating structure of base island embedded chip formal dress lock hole radiating block projection, include chip (3), the Metal Substrate island (1) of being carried of chip below, pin (4) in the metal, chip is to the wire (5) of the signal interconnection of the interior pin of metal, the plastic-sealed body (8) of the conduction between chip and the Metal Substrate island or nonconducting heat conduction bonding material I (2) and insulation, plastic packaging material (8) is imbedded on described Metal Substrate island (1), it is characterized in that being provided with radiating block (7) in described chip (3) top, this radiating block (7) has lock hole (7.1), is equipped with conduction or nonconducting heat conduction bonding material II (6) between this radiating block (7) and the described chip (3); Be provided with radiating cap (11) in described radiating block (7) top, protrusion is provided with a projection (11.1) in the middle of described radiating cap (11) lower surface, and described radiating cap (11) patches with the radiating block that has lock hole (7) by this projection (11.1) and is connected; And between this radiating cap (11) and described radiating block (7) and in described lock hole (7.1), be equipped with the conduction or nonconducting heat conduction bonding material III (13); Described radiating cap (11) is sleeved on the plastic-sealed body (8).
2. the external radiating cap encapsulating structure of a kind of base island embedded chip formal dress lock hole radiating block projection according to claim 1, the material that it is characterized in that described radiating block (7) is copper, aluminium, pottery or alloy.
3. the external radiating cap encapsulating structure of a kind of base island embedded chip formal dress lock hole radiating block projection according to claim 1, the material that it is characterized in that described radiating cap (11) is copper, aluminium, pottery or alloy.
CN 201010112834 2010-01-29 2010-01-29 External connection heat radiation cap encapsulation structure of positive installation lock hole heat radiation block projected post of base island embedded chip Pending CN101770999A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201010112834 CN101770999A (en) 2010-01-29 2010-01-29 External connection heat radiation cap encapsulation structure of positive installation lock hole heat radiation block projected post of base island embedded chip

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Application Number Priority Date Filing Date Title
CN 201010112834 CN101770999A (en) 2010-01-29 2010-01-29 External connection heat radiation cap encapsulation structure of positive installation lock hole heat radiation block projected post of base island embedded chip

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CN101770999A true CN101770999A (en) 2010-07-07

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101950726A (en) * 2010-09-04 2011-01-19 江苏长电科技股份有限公司 First-coating last-etching single package method for positively packaging double-sided graphic chip
CN110676232A (en) * 2019-08-30 2020-01-10 华为技术有限公司 Semiconductor device packaging structure, manufacturing method thereof and electronic equipment

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101950726A (en) * 2010-09-04 2011-01-19 江苏长电科技股份有限公司 First-coating last-etching single package method for positively packaging double-sided graphic chip
CN101950726B (en) * 2010-09-04 2012-05-23 江苏长电科技股份有限公司 First-coating last-etching single package method for positively packaging double-sided graphic chip
CN110676232A (en) * 2019-08-30 2020-01-10 华为技术有限公司 Semiconductor device packaging structure, manufacturing method thereof and electronic equipment
CN110676232B (en) * 2019-08-30 2022-05-24 华为技术有限公司 Semiconductor device packaging structure, manufacturing method thereof and electronic equipment

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Open date: 20100707