CN101765885B - 操作存储器件的方法和设备 - Google Patents

操作存储器件的方法和设备 Download PDF

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Publication number
CN101765885B
CN101765885B CN200880100678XA CN200880100678A CN101765885B CN 101765885 B CN101765885 B CN 101765885B CN 200880100678X A CN200880100678X A CN 200880100678XA CN 200880100678 A CN200880100678 A CN 200880100678A CN 101765885 B CN101765885 B CN 101765885B
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China
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data
unit
memory device
unit data
memory
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CN200880100678XA
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Chinese (zh)
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CN101765885A (zh
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T·J·谢纳尔
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International Business Machines Corp
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International Business Machines Corp
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    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 

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  • Techniques For Improving Reliability Of Storages (AREA)
  • Power Sources (AREA)
CN200880100678XA 2007-08-09 2008-08-06 操作存储器件的方法和设备 Active CN101765885B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/836,210 US7783846B2 (en) 2007-08-09 2007-08-09 Method, apparatus and computer program product providing energy reduction when storing data in a memory
US11/836,210 2007-08-09
PCT/EP2008/060330 WO2009019284A1 (en) 2007-08-09 2008-08-06 Providing energy reduction when storing data in a memory

Publications (2)

Publication Number Publication Date
CN101765885A CN101765885A (zh) 2010-06-30
CN101765885B true CN101765885B (zh) 2013-10-23

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CN200880100678XA Active CN101765885B (zh) 2007-08-09 2008-08-06 操作存储器件的方法和设备

Country Status (7)

Country Link
US (1) US7783846B2 (https=)
EP (1) EP2176865B1 (https=)
JP (1) JP5068367B2 (https=)
KR (1) KR101071797B1 (https=)
CN (1) CN101765885B (https=)
AT (1) ATE512441T1 (https=)
WO (1) WO2009019284A1 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7925844B2 (en) 2007-11-29 2011-04-12 Micron Technology, Inc. Memory register encoding systems and methods
US8078795B2 (en) * 2008-01-31 2011-12-13 Dell Products L.P. Methods and media for writing data to flash memory
US8769188B2 (en) * 2009-11-18 2014-07-01 Mediatek Inc. Nonvolatile memory controller and method for writing data to nonvolatile memory
US8432729B2 (en) 2010-04-13 2013-04-30 Mosaid Technologies Incorporated Phase-change memory with multiple polarity bits having enhanced endurance and error tolerance
US8555095B2 (en) * 2010-07-26 2013-10-08 Apple Inc. Methods and systems for dynamically controlling operations in a non-volatile memory to limit power consumption
JP5942781B2 (ja) * 2012-04-16 2016-06-29 ソニー株式会社 記憶制御装置、メモリシステム、情報処理システム、および、記憶制御方法
KR102049281B1 (ko) 2012-10-23 2019-11-27 삼성전자주식회사 불휘발성 메모리 및 컨트롤러를 포함하는 메모리 시스템, 그리고 불휘발성 메모리에 데이터를 프로그램하는 프로그램 방법
KR101419710B1 (ko) * 2012-12-12 2014-08-13 어보브반도체 주식회사 플래시 메모리의 소모 전력 감소 방법 및 그 장치
KR102211220B1 (ko) * 2013-11-12 2021-02-03 에스케이하이닉스 주식회사 반도체 장치 및 이의 동작 방법
CN103714294B (zh) * 2013-12-24 2016-08-17 南京邮电大学 一种数据覆写方法
US9740610B2 (en) * 2014-12-24 2017-08-22 Intel Corporation Polarity based data transfer function for volatile memory
US9583207B2 (en) * 2015-02-10 2017-02-28 Sandisk Technologies Llc Adaptive data shaping in nonvolatile memory
JP6694284B2 (ja) * 2016-01-29 2020-05-13 シナプティクス・ジャパン合同会社 画像データ伝送システム、送信回路及び受信回路
CN107195321B (zh) * 2017-05-15 2020-05-19 华中科技大学 一种交叉开关结构阻变式存储器性能优化方法及系统
KR102683747B1 (ko) * 2019-01-22 2024-07-11 에스케이하이닉스 주식회사 반도체 메모리 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5873112A (en) * 1996-02-23 1999-02-16 Micron Technology, Inc. System and method for encoding data to reduce power and time required to write the encoded data to a flash memory
EP0917154A2 (en) * 1997-11-13 1999-05-19 STMicroelectronics, Inc. Programmed memory with improved speed and power consumption
US20060259716A1 (en) * 2001-08-30 2006-11-16 Micron Technology, Inc. Bit inversion in memory devices

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6292868B1 (en) 1996-10-15 2001-09-18 Micron Technology, Inc. System and method for encoding data to reduce power and time required to write the encoded data to a flash memory
US6633951B2 (en) 2001-03-15 2003-10-14 Intel Corporation Method for reducing power consumption through dynamic memory storage inversion
JP2002366419A (ja) * 2001-06-07 2002-12-20 Mitsubishi Electric Corp データ処理装置およびデータ処理方法
JP4134637B2 (ja) * 2002-08-27 2008-08-20 株式会社日立製作所 半導体装置
JP4505195B2 (ja) * 2003-04-01 2010-07-21 エイティアイ テクノロジーズ インコーポレイテッド メモリデバイスにおいてデータを反転させるための方法および装置
JP2006053770A (ja) * 2004-08-12 2006-02-23 Seiko Epson Corp データ処理装置、データ復元装置、データ処理方法及びデータ処理プログラム

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5873112A (en) * 1996-02-23 1999-02-16 Micron Technology, Inc. System and method for encoding data to reduce power and time required to write the encoded data to a flash memory
EP0917154A2 (en) * 1997-11-13 1999-05-19 STMicroelectronics, Inc. Programmed memory with improved speed and power consumption
US20060259716A1 (en) * 2001-08-30 2006-11-16 Micron Technology, Inc. Bit inversion in memory devices

Also Published As

Publication number Publication date
EP2176865A1 (en) 2010-04-21
US20090043944A1 (en) 2009-02-12
JP5068367B2 (ja) 2012-11-07
ATE512441T1 (de) 2011-06-15
WO2009019284A1 (en) 2009-02-12
JP2010536080A (ja) 2010-11-25
KR20100037121A (ko) 2010-04-08
KR101071797B1 (ko) 2011-10-11
EP2176865B1 (en) 2011-06-08
US7783846B2 (en) 2010-08-24
CN101765885A (zh) 2010-06-30

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