CN101755073B - 在晶圆上沉积薄膜的反应器 - Google Patents

在晶圆上沉积薄膜的反应器 Download PDF

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Publication number
CN101755073B
CN101755073B CN2008801001697A CN200880100169A CN101755073B CN 101755073 B CN101755073 B CN 101755073B CN 2008801001697 A CN2008801001697 A CN 2008801001697A CN 200880100169 A CN200880100169 A CN 200880100169A CN 101755073 B CN101755073 B CN 101755073B
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CN
China
Prior art keywords
gas
exhaust
reactor
unit
substrate supporting
Prior art date
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Active
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CN2008801001697A
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English (en)
Chinese (zh)
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CN101755073A (zh
Inventor
韩昌熙
李昊荣
朴相俊
许真弼
安铁贤
李晶桓
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lap Yi Cmi Holdings Ltd
Wonik IPS Co Ltd
Original Assignee
IPS Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020070076164A external-priority patent/KR100967881B1/ko
Priority claimed from KR1020070076163A external-priority patent/KR100967882B1/ko
Application filed by IPS Ltd filed Critical IPS Ltd
Publication of CN101755073A publication Critical patent/CN101755073A/zh
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Publication of CN101755073B publication Critical patent/CN101755073B/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
CN2008801001697A 2007-07-30 2008-07-23 在晶圆上沉积薄膜的反应器 Active CN101755073B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR10-2007-0076163 2007-07-30
KR1020070076164A KR100967881B1 (ko) 2007-07-30 2007-07-30 박막증착장치
KR1020070076163A KR100967882B1 (ko) 2007-07-30 2007-07-30 박막증착장치
KR10-2007-0076164 2007-07-30
PCT/KR2008/004301 WO2009017322A1 (fr) 2007-07-30 2008-07-23 Réacteur servant à déposer un film mince sur une plaquette

Publications (2)

Publication Number Publication Date
CN101755073A CN101755073A (zh) 2010-06-23
CN101755073B true CN101755073B (zh) 2011-10-12

Family

ID=40304516

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008801001697A Active CN101755073B (zh) 2007-07-30 2008-07-23 在晶圆上沉积薄膜的反应器

Country Status (3)

Country Link
CN (1) CN101755073B (fr)
TW (1) TWI496199B (fr)
WO (1) WO2009017322A1 (fr)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5083193B2 (ja) * 2008-12-12 2012-11-28 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
JP5107285B2 (ja) * 2009-03-04 2012-12-26 東京エレクトロン株式会社 成膜装置、成膜方法、プログラム、およびコンピュータ可読記憶媒体
JP5392069B2 (ja) * 2009-12-25 2014-01-22 東京エレクトロン株式会社 成膜装置
JP5497423B2 (ja) * 2009-12-25 2014-05-21 東京エレクトロン株式会社 成膜装置
EP2360293A1 (fr) 2010-02-11 2011-08-24 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Procédé et appareil pour déposer des couches atomiques sur un substrat
EP2362411A1 (fr) 2010-02-26 2011-08-31 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Appareil et procédé de gravure ionique réactive
JP5812606B2 (ja) * 2010-02-26 2015-11-17 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
KR100996210B1 (ko) * 2010-04-12 2010-11-24 세메스 주식회사 가스 분사 유닛 및 이를 이용한 박막 증착 장치 및 방법
CN101824606B (zh) * 2010-05-12 2012-06-06 中国科学院苏州纳米技术与纳米仿生研究所 一种垂直喷淋式mocvd反应器
EP2441860A1 (fr) * 2010-10-13 2012-04-18 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Procédé et appareil pour le dépôt de couches atomiques
KR101829669B1 (ko) * 2011-01-04 2018-02-19 주식회사 원익아이피에스 박막 증착 방법 및 박막 증착 장치
JP5630393B2 (ja) * 2011-07-21 2014-11-26 東京エレクトロン株式会社 成膜装置及び基板処理装置
KR20130086806A (ko) * 2012-01-26 2013-08-05 삼성전자주식회사 박막 증착 장치
KR101356664B1 (ko) * 2012-02-03 2014-02-05 주식회사 유진테크 측방배기 방식 기판처리장치
US20130237063A1 (en) * 2012-03-09 2013-09-12 Seshasayee Varadarajan Split pumping method, apparatus, and system
US9464353B2 (en) * 2013-11-21 2016-10-11 Wonik Ips Co., Ltd. Substrate processing apparatus
US20160033070A1 (en) * 2014-08-01 2016-02-04 Applied Materials, Inc. Recursive pumping member
JP6258184B2 (ja) * 2014-11-13 2018-01-10 東京エレクトロン株式会社 基板処理装置
JP6478847B2 (ja) 2015-07-08 2019-03-06 東京エレクトロン株式会社 基板処理装置
NL2015215B1 (en) * 2015-07-23 2017-02-08 Meyer Burger (Netherlands) B V Programmable deposition apparatus.
CN105280469A (zh) * 2015-09-17 2016-01-27 武汉华星光电技术有限公司 用以降低排气口等离子体损害的蚀刻反应系统
TWI768849B (zh) 2017-10-27 2022-06-21 美商應用材料股份有限公司 具有空間分離的單個晶圓處理環境
CN109750274B (zh) * 2017-11-01 2021-10-22 长鑫存储技术有限公司 半导体生产设备及半导体工艺方法
CN110904437B (zh) * 2018-09-14 2024-05-03 长鑫存储技术有限公司 薄膜制备设备及其反应腔室
KR20200091543A (ko) * 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11952660B2 (en) 2019-07-29 2024-04-09 Applied Materials, Inc. Semiconductor processing chambers and methods for cleaning the same
US20220084845A1 (en) * 2020-09-17 2022-03-17 Applied Materials, Inc. High conductance process kit

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6203619B1 (en) * 1998-10-26 2001-03-20 Symetrix Corporation Multiple station apparatus for liquid source fabrication of thin films
US20040082171A1 (en) * 2002-09-17 2004-04-29 Shin Cheol Ho ALD apparatus and ALD method for manufacturing semiconductor device
CN1643668A (zh) * 2002-03-26 2005-07-20 东京毅力科创株式会社 基板处理装置和基板处理方法、高速旋转阀、清洁方法
KR100722848B1 (ko) * 2006-07-19 2007-05-30 주식회사 아이피에스 박막증착장치

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100616486B1 (ko) * 2004-02-09 2006-08-28 백용구 독립적으로 가스가 흐르는 독립분리셀을 이용한원자층박막 증착장치 및 증착방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6203619B1 (en) * 1998-10-26 2001-03-20 Symetrix Corporation Multiple station apparatus for liquid source fabrication of thin films
CN1643668A (zh) * 2002-03-26 2005-07-20 东京毅力科创株式会社 基板处理装置和基板处理方法、高速旋转阀、清洁方法
US20040082171A1 (en) * 2002-09-17 2004-04-29 Shin Cheol Ho ALD apparatus and ALD method for manufacturing semiconductor device
KR100722848B1 (ko) * 2006-07-19 2007-05-30 주식회사 아이피에스 박막증착장치

Also Published As

Publication number Publication date
CN101755073A (zh) 2010-06-23
WO2009017322A1 (fr) 2009-02-05
TW200913029A (en) 2009-03-16
TWI496199B (zh) 2015-08-11

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C06 Publication
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SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee

Owner name: WONIK IPS CO., LTD.

Free format text: FORMER NAME: IPS LTD.

CP01 Change in the name or title of a patent holder

Address after: Gyeonggi Do, South Korea

Patentee after: WONIK IPS Co.,Ltd.

Address before: Gyeonggi Do, South Korea

Patentee before: IPS Ltd.

C41 Transfer of patent application or patent right or utility model
C56 Change in the name or address of the patentee
CP03 Change of name, title or address

Address after: Gyeonggi Do Korea Pyeongtaek paint 78-40 (jije Dong strange street)

Patentee after: Lap Yi Cmi Holdings Ltd.

Address before: Gyeonggi Do, South Korea

Patentee before: WONIK IPS Co.,Ltd.

TR01 Transfer of patent right

Effective date of registration: 20160726

Address after: South Korea Gyeonggi Do Ping Ze Zhenwei Zhenwei group produced 75 road surface

Patentee after: WONIK IPS Co.,Ltd.

Address before: Gyeonggi Do Korea Pyeongtaek paint 78-40 (jije Dong strange street)

Patentee before: Lap Yi Cmi Holdings Ltd.