CN101750899A - 光刻版图及其测量光刻形变的方法 - Google Patents
光刻版图及其测量光刻形变的方法 Download PDFInfo
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- CN101750899A CN101750899A CN200810044053A CN200810044053A CN101750899A CN 101750899 A CN101750899 A CN 101750899A CN 200810044053 A CN200810044053 A CN 200810044053A CN 200810044053 A CN200810044053 A CN 200810044053A CN 101750899 A CN101750899 A CN 101750899A
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102566339A (zh) * | 2011-11-02 | 2012-07-11 | 上海宏力半导体制造有限公司 | 全局对准标记以及全局对准方法 |
CN103176350A (zh) * | 2011-12-26 | 2013-06-26 | 和舰科技(苏州)有限公司 | 一种使晶圆上芯片数量最大化的光罩制作方法 |
CN108732861A (zh) * | 2018-04-26 | 2018-11-02 | 上海华力集成电路制造有限公司 | 一种集成电路研发用掩膜板 |
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JP3042639B2 (ja) * | 1991-07-12 | 2000-05-15 | 日本電気株式会社 | 半導体装置製造用フォトレティクル |
JP2988393B2 (ja) * | 1996-08-29 | 1999-12-13 | 日本電気株式会社 | 露光方法 |
AU2001296533A1 (en) * | 2000-10-23 | 2002-05-06 | Advanced Micro Devices Inc. | System and method for facilitating wafer alignment by mitigating effects of reticle rotation on overlay |
CN100445869C (zh) * | 2004-04-23 | 2008-12-24 | 上海华虹Nec电子有限公司 | 用于光刻套刻的划片槽结构 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102566339A (zh) * | 2011-11-02 | 2012-07-11 | 上海宏力半导体制造有限公司 | 全局对准标记以及全局对准方法 |
CN103176350A (zh) * | 2011-12-26 | 2013-06-26 | 和舰科技(苏州)有限公司 | 一种使晶圆上芯片数量最大化的光罩制作方法 |
CN108732861A (zh) * | 2018-04-26 | 2018-11-02 | 上海华力集成电路制造有限公司 | 一种集成电路研发用掩膜板 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
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Effective date of registration: 20140108 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |