CN101736344B - 化学机械抛光组合物及其相关方法 - Google Patents

化学机械抛光组合物及其相关方法 Download PDF

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Publication number
CN101736344B
CN101736344B CN2009102083436A CN200910208343A CN101736344B CN 101736344 B CN101736344 B CN 101736344B CN 2009102083436 A CN2009102083436 A CN 2009102083436A CN 200910208343 A CN200910208343 A CN 200910208343A CN 101736344 B CN101736344 B CN 101736344B
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CN
China
Prior art keywords
mechanical polishing
chemical
substrate
chemical mechanical
germanium
Prior art date
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Expired - Fee Related
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CN2009102083436A
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English (en)
Chinese (zh)
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CN101736344A (zh
Inventor
刘振东
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ROHM AND HAAS ELECTRONIC MATER
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ROHM AND HAAS ELECTRONIC MATER
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Publication of CN101736344A publication Critical patent/CN101736344A/zh
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Expired - Fee Related legal-status Critical Current
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN2009102083436A 2008-11-05 2009-11-05 化学机械抛光组合物及其相关方法 Expired - Fee Related CN101736344B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/264,928 2008-11-05
US12/264,928 US8735293B2 (en) 2008-11-05 2008-11-05 Chemical mechanical polishing composition and methods relating thereto

Publications (2)

Publication Number Publication Date
CN101736344A CN101736344A (zh) 2010-06-16
CN101736344B true CN101736344B (zh) 2012-01-18

Family

ID=41581914

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009102083436A Expired - Fee Related CN101736344B (zh) 2008-11-05 2009-11-05 化学机械抛光组合物及其相关方法

Country Status (6)

Country Link
US (1) US8735293B2 (https=)
EP (1) EP2184330B1 (https=)
JP (1) JP5543174B2 (https=)
KR (1) KR101655790B1 (https=)
CN (1) CN101736344B (https=)
TW (1) TWI460262B (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101341875B1 (ko) * 2008-04-30 2013-12-16 한양대학교 산학협력단 상변환 물질 연마용 슬러리 및 이를 이용한 상변환 물질의 패터닝 방법
US8232208B2 (en) * 2010-06-15 2012-07-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Stabilized chemical mechanical polishing composition and method of polishing a substrate
US20120001118A1 (en) * 2010-07-01 2012-01-05 Koo Ja-Ho Polishing slurry for chalcogenide alloy
US8790160B2 (en) * 2011-04-28 2014-07-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing phase change alloys
US8309468B1 (en) * 2011-04-28 2012-11-13 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and method for polishing germanium-antimony-tellurium alloys
JP2013084876A (ja) * 2011-09-30 2013-05-09 Fujimi Inc 研磨用組成物
JP2013080751A (ja) * 2011-09-30 2013-05-02 Fujimi Inc 研磨用組成物
KR101931930B1 (ko) * 2011-12-21 2018-12-24 바스프 에스이 Cmp 조성물의 제조 방법 및 그의 적용
JP2013247341A (ja) * 2012-05-29 2013-12-09 Fujimi Inc 研磨用組成物並びにそれを用いた研磨方法及びデバイス製造方法
KR20140000496A (ko) * 2012-06-22 2014-01-03 에스케이하이닉스 주식회사 연마 조성물, 이의 제조 방법 및 이를 이용한 화학적 기계적 연마 방법
JP6139975B2 (ja) * 2013-05-15 2017-05-31 株式会社フジミインコーポレーテッド 研磨用組成物
JP6482234B2 (ja) * 2014-10-22 2019-03-13 株式会社フジミインコーポレーテッド 研磨用組成物
US9293339B1 (en) * 2015-09-24 2016-03-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of polishing semiconductor substrate
CN108624234A (zh) * 2017-03-21 2018-10-09 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
JP6775453B2 (ja) * 2017-03-23 2020-10-28 山口精研工業株式会社 磁気ディスク基板用研磨剤組成物
TWI787564B (zh) * 2018-12-10 2022-12-21 美商Ｃｍｃ材料股份有限公司 無氧化劑化學機械拋光(cmp)漿料及釕化學機械拋光

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6757971B2 (en) * 2001-08-30 2004-07-06 Micron Technology, Inc. Filling plugs through chemical mechanical polish
US6884144B2 (en) * 2002-08-16 2005-04-26 Micron Technology, Inc. Methods and systems for planarizing microelectronic devices with Ge-Se-Ag layers
WO2004053456A2 (en) * 2002-12-09 2004-06-24 Corning Incorporated Method using multi-component colloidal abrasives for cmp processing of semiconductor and optical materials
KR100681266B1 (ko) * 2005-07-25 2007-02-09 삼성전자주식회사 가변 저항 구조물의 제조 방법 및 이를 이용한 상변화메모리 장치의 제조 방법
US7741636B2 (en) * 2006-01-09 2010-06-22 Macronix International Co., Ltd. Programmable resistive RAM and manufacturing method
US7897061B2 (en) * 2006-02-01 2011-03-01 Cabot Microelectronics Corporation Compositions and methods for CMP of phase change alloys
US7297633B1 (en) * 2006-06-05 2007-11-20 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Compositions for chemical mechanical polishing silica and silicon nitride having improved endpoint detection
KR100807223B1 (ko) * 2006-07-12 2008-02-28 삼성전자주식회사 상변화 물질층, 상변화 물질층 형성 방법 및 이를 이용한상변화 메모리 장치의 제조 방법
US8518296B2 (en) * 2007-02-14 2013-08-27 Micron Technology, Inc. Slurries and methods for polishing phase change materials
US20090001339A1 (en) * 2007-06-29 2009-01-01 Tae Young Lee Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same
CN101765647B (zh) * 2007-07-26 2016-05-04 卡伯特微电子公司 用于相变材料的化学-机械抛光的组合物及方法
US7678605B2 (en) * 2007-08-30 2010-03-16 Dupont Air Products Nanomaterials Llc Method for chemical mechanical planarization of chalcogenide materials
KR101198100B1 (ko) * 2007-12-11 2012-11-09 삼성전자주식회사 상변화 물질층 패턴의 형성 방법, 상변화 메모리 장치의제조 방법 및 이에 사용되는 상변화 물질층 연마용 슬러리조성물

Also Published As

Publication number Publication date
TW201022424A (en) 2010-06-16
JP2010114446A (ja) 2010-05-20
US20100112906A1 (en) 2010-05-06
TWI460262B (zh) 2014-11-11
KR101655790B1 (ko) 2016-09-08
US8735293B2 (en) 2014-05-27
JP5543174B2 (ja) 2014-07-09
CN101736344A (zh) 2010-06-16
EP2184330A1 (en) 2010-05-12
KR20100050415A (ko) 2010-05-13
EP2184330B1 (en) 2011-05-11

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