CN101728262A - 一种用于n型硅外延片电阻率测量前的表面热处理工艺 - Google Patents
一种用于n型硅外延片电阻率测量前的表面热处理工艺 Download PDFInfo
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103390570A (zh) * | 2013-08-13 | 2013-11-13 | 上海新傲科技股份有限公司 | 电容-电压测试预处理的方法 |
CN112366132A (zh) * | 2020-11-05 | 2021-02-12 | 天津中环领先材料技术有限公司 | 一种硅片氧化方法 |
CN112485528A (zh) * | 2020-11-13 | 2021-03-12 | 中国矿业大学 | 一种高阻片的电阻测量方法 |
CN113109625A (zh) * | 2021-04-07 | 2021-07-13 | 上海新昇半导体科技有限公司 | 硅片导电类型的判定方法 |
CN113655094A (zh) * | 2021-08-06 | 2021-11-16 | 上海新昇半导体科技有限公司 | 一种确定硅片导电类型的方法 |
CN113721076A (zh) * | 2021-08-09 | 2021-11-30 | 上海新昇半导体科技有限公司 | 一种硅片电阻率的测量方法 |
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2009
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103390570A (zh) * | 2013-08-13 | 2013-11-13 | 上海新傲科技股份有限公司 | 电容-电压测试预处理的方法 |
CN112366132A (zh) * | 2020-11-05 | 2021-02-12 | 天津中环领先材料技术有限公司 | 一种硅片氧化方法 |
CN112485528A (zh) * | 2020-11-13 | 2021-03-12 | 中国矿业大学 | 一种高阻片的电阻测量方法 |
CN113109625A (zh) * | 2021-04-07 | 2021-07-13 | 上海新昇半导体科技有限公司 | 硅片导电类型的判定方法 |
CN113655094A (zh) * | 2021-08-06 | 2021-11-16 | 上海新昇半导体科技有限公司 | 一种确定硅片导电类型的方法 |
CN113655094B (zh) * | 2021-08-06 | 2024-01-19 | 上海新昇半导体科技有限公司 | 一种确定硅片导电类型的方法 |
CN113721076A (zh) * | 2021-08-09 | 2021-11-30 | 上海新昇半导体科技有限公司 | 一种硅片电阻率的测量方法 |
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