CN101728262B - 一种用于n型硅外延片电阻率测量前的表面热处理工艺 - Google Patents
一种用于n型硅外延片电阻率测量前的表面热处理工艺 Download PDFInfo
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- CN101728262B CN101728262B CN 200910241668 CN200910241668A CN101728262B CN 101728262 B CN101728262 B CN 101728262B CN 200910241668 CN200910241668 CN 200910241668 CN 200910241668 A CN200910241668 A CN 200910241668A CN 101728262 B CN101728262 B CN 101728262B
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- heat treatment
- type silicon
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- nitrogen
- surface heat
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- 238000000034 method Methods 0.000 title claims abstract description 58
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 49
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 49
- 239000010703 silicon Substances 0.000 title claims abstract description 49
- 230000008569 process Effects 0.000 title claims abstract description 39
- 238000010438 heat treatment Methods 0.000 title claims abstract description 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 27
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000001301 oxygen Substances 0.000 claims abstract description 22
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 22
- 238000001816 cooling Methods 0.000 claims abstract description 10
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000012159 carrier gas Substances 0.000 claims abstract description 3
- 239000013078 crystal Substances 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 238000005259 measurement Methods 0.000 abstract description 12
- 238000004381 surface treatment Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000003908 quality control method Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 17
- 238000012360 testing method Methods 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 13
- 238000013461 design Methods 0.000 description 6
- 238000000407 epitaxy Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- DOTMOQHOJINYBL-UHFFFAOYSA-N molecular nitrogen;molecular oxygen Chemical compound N#N.O=O DOTMOQHOJINYBL-UHFFFAOYSA-N 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 238000006701 autoxidation reaction Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000001595 flow curve Methods 0.000 description 2
- 238000002309 gasification Methods 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000010301 surface-oxidation reaction Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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CN 200910241668 CN101728262B (zh) | 2009-11-30 | 2009-11-30 | 一种用于n型硅外延片电阻率测量前的表面热处理工艺 |
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CN 200910241668 CN101728262B (zh) | 2009-11-30 | 2009-11-30 | 一种用于n型硅外延片电阻率测量前的表面热处理工艺 |
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CN101728262A CN101728262A (zh) | 2010-06-09 |
CN101728262B true CN101728262B (zh) | 2011-06-08 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103390570A (zh) * | 2013-08-13 | 2013-11-13 | 上海新傲科技股份有限公司 | 电容-电压测试预处理的方法 |
CN112366132A (zh) * | 2020-11-05 | 2021-02-12 | 天津中环领先材料技术有限公司 | 一种硅片氧化方法 |
CN112485528A (zh) * | 2020-11-13 | 2021-03-12 | 中国矿业大学 | 一种高阻片的电阻测量方法 |
CN113109625A (zh) * | 2021-04-07 | 2021-07-13 | 上海新昇半导体科技有限公司 | 硅片导电类型的判定方法 |
CN113655094B (zh) * | 2021-08-06 | 2024-01-19 | 上海新昇半导体科技有限公司 | 一种确定硅片导电类型的方法 |
CN113721076A (zh) * | 2021-08-09 | 2021-11-30 | 上海新昇半导体科技有限公司 | 一种硅片电阻率的测量方法 |
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Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |