CN101706065A - UV LED area source for offset printing press and manufacturing method thereof - Google Patents
UV LED area source for offset printing press and manufacturing method thereof Download PDFInfo
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- CN101706065A CN101706065A CN200910199600A CN200910199600A CN101706065A CN 101706065 A CN101706065 A CN 101706065A CN 200910199600 A CN200910199600 A CN 200910199600A CN 200910199600 A CN200910199600 A CN 200910199600A CN 101706065 A CN101706065 A CN 101706065A
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- 238000007645 offset printing Methods 0.000 title claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 title claims 2
- 238000003825 pressing Methods 0.000 title description 2
- 239000000463 material Substances 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 238000010521 absorption reaction Methods 0.000 claims abstract description 5
- 238000001816 cooling Methods 0.000 claims description 16
- 230000003287 optical effect Effects 0.000 claims description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- 239000000839 emulsion Substances 0.000 claims description 6
- 230000005855 radiation Effects 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 206010070834 Sensitisation Diseases 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 230000008313 sensitization Effects 0.000 claims description 2
- 239000011343 solid material Substances 0.000 claims description 2
- 239000000084 colloidal system Substances 0.000 claims 1
- 238000004132 cross linking Methods 0.000 claims 1
- 230000004048 modification Effects 0.000 claims 1
- 238000012986 modification Methods 0.000 claims 1
- 238000006116 polymerization reaction Methods 0.000 claims 1
- 230000009711 regulatory function Effects 0.000 claims 1
- LRPWSMQGXLANTG-UHFFFAOYSA-M iodogallium Chemical compound I[Ga] LRPWSMQGXLANTG-UHFFFAOYSA-M 0.000 abstract description 8
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052753 mercury Inorganic materials 0.000 abstract description 8
- 239000003292 glue Substances 0.000 abstract description 5
- 238000007639 printing Methods 0.000 abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- 239000003504 photosensitizing agent Substances 0.000 abstract 5
- 238000000862 absorption spectrum Methods 0.000 abstract 1
- 238000000295 emission spectrum Methods 0.000 abstract 1
- 231100000252 nontoxic Toxicity 0.000 abstract 1
- 230000003000 nontoxic effect Effects 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 6
- 238000005070 sampling Methods 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000003412 degenerative effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035807 sensation Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
The invention relates to a UV LED area source for an offset printing press, which is a semiconductor luminous device directly generating ultraviolet light, and belongs to the field of offset printing press printing. The UV LED area source is mainly characterized in that: high-power LED chips of which the luminous wavelength is between 200 and 450nm are integrated in a certain ratio to form the area source or linear source with a certain wavelength in a wave band of which the peak wavelength is between 200 and 450nm; the emission spectrum of the light source is matched with an absorption spectrum of a photosensitizer in a sensitive glue material, namely the length of waves emitted by the UV LED area source is concentrated at the periphery of the absorption wavelength of the photosensitizer so as to effectively improve the absorption rate and highly efficiently trigger the photosensitizer in the sensitive glue; and under the action of the photosensitizer and the ultraviolet light, the glue is combined with the photosensitizer so as to generate a water insoluble solid matter. Because the area source or the linear source is the LED semiconductor light source device, and compared with a supervoltage mercury lamp and a Iodine gallium light, the area source or the linear source cannot cause energy loss caused by infrared light, has extreme low loss and not great temperature rise, avoids the temperature influencing printing materials, and is nontoxic and green; and the area source can be designed into any geometrical shapes such as a linear shape, a surface shape and a three-dimensional shape as required in the actual use. The UV LED area source has strong usability and obvious economic benefit, industry innovation benefit and social benefit.
Description
Affiliated technical field
The present invention relates to a kind of UV LED area source that is used for offset press and preparation method thereof, the ultraviolet light that it sends emulsion sensitive wave length in the photoresists makes polyvinyl alcohol combine with responsive photo etching, produces the water-insoluble solid material.The spectrum peak wavelength of light source is certain specific wavelength in 200nm～450nm ultraviolet region and purple light district.
Background technology
At present, the ultraviolet source that is used for offset printing mainly is traditional ultraviolet sources such as Iodine gallium light, extra-high-pressure mercury vapour lamp.Along with extensive use in industrial production, traditional ultra-violet curing light source exposed day by day goes out some shortcomings:
(1) traditional ultraviolet source such as Iodine gallium light, extra-high-pressure mercury vapour lamp need adopt high drive, and power consumption height, power mostly are tens kilowatts, and start back preheating, and the life-span is not long.General work will be changed fluorescent tube about 1000 hours.And electrodeless lamp is because the needs of microwave transmission passage, and the light fixture volume is bigger, costs an arm and a leg.
(2) traditional ultraviolet source wave-length coverage such as Iodine gallium light, extra-high-pressure mercury vapour lamp is big, and thermal discharge is big, and curing efficiency is lower.The UV brightness and the heat that produce of traditional ultraviolet source such as Iodine gallium light, extra-high-pressure mercury vapour lamp is very high apparently, this light source light spectrum is very wide in fact, the ultraviolet light spectral coverage that really is used for sensitization curing only accounts for wherein part energy, and be visible light and infrared radiating light greatly, no effect light is a lot.
(3) traditional ultraviolet source such as Iodine gallium light, extra-high-pressure mercury vapour lamp all needs to dispose cooling device.The volume of cooling device often is distal to light source itself, causes auxiliary equipment many, and complicated operation has improved operating cost simultaneously.In addition, the performance that cooling is equipped with plays an important role to the normal operation of light source, and will directly influence solidification effect.
(4) irradiation is inhomogeneous.The ultraviolet source fluorescent tube length direction that Iodine gallium light, extra-high-pressure mercury vapour lamp etc. are traditional, the luminous intensity at two ends than mid portion a little less than, can not uniformly light-emitting, can't reach the planar object uniform irradiation, making the light intensity difference that curing materials absorbs influences solidification effect.
(5) adjustability is poor.It generally is to realize that by changing the number of lighting fluorescent tube in many lamp tube light sources corresponding irradiation intensity changes between limited several values that traditional ultraviolet source irradiation intensity such as Iodine gallium light, extra-high-pressure mercury vapour lamp is regulated, and uses underaction.For example, can only clean cut put on an equal footing for each position of curved face object, the ultraviolet light that emission is fixing, the light intensity that causes the curved surface diverse location to absorb has notable difference; And, also can't adjust radiation intensity according to the demand of material at the UV material that different irradiation require.
The high-power UV LED of light emitting semiconductor device because have that volume is little, little power consumption, the life-span is long, heat release is few and need not in special configuration cooling device, the spectra collection, characteristics such as curing efficiency height and environmental protection, can be used for perfect light source as the printer mask-making technology, its principle of luminosity is called PN junction between based on the P-type semiconductor in hole and the N-type semiconductor based on electronics a transition zone being arranged.At the PN junction place, the form with photon when hole and electron recombination discharges unnecessary energy, sends the light of certain wavelength.Light wavelength is relevant with the material of ready-made PN junction.In order to improve the efficient of photoresists, cut down the consumption of energy simultaneously, the invention provides a kind of irradiation uniform and stable and flexibly adjustable based on high-power UV LED ultraviolet source, it mainly sends the light that is suitable for emulsion absorption in the photoresists, and (spectrum is ultraviolet light and the purple light district of 200～450nm, peak wavelength is certain wavelength in 200nm～450nm interval, and for example peak wavelength is the light source of 403nm or 417nm), reduce the light of other wave band, improve offset press printing efficient, reduce cost.
Summary of the invention
The invention provides the uniform and stable and flexible adjustable UV LED surface light source system that is used for offset press of a kind of irradiation, it mainly sends the light (being positioned at ultraviolet light and purple light district that spectrum is 200nm～450nm) of emulsion sensitivity in the photoresists, reduce the light of other wave band, improve offset press printing efficient, reduce and solidify cost.
The inventor attentively studies in order to reach above-mentioned purpose, found that: by the great power LED of the light that sends some specific wavelength in the integrated 200nm of certain ratio～450nm wave band, integrated each great power LED adopt the form of series-parallel connection, and adopt effective optical system, driving power source system and cooling system can solve above-mentioned problem, thereby finished the present invention.
That is, the present invention is used for the UV LED surface light source system of offset press, it is characterized in that, comprise be used for fixing high-power UV led chip fixing base, at driving power source system, optical system and the cooling system of substrate upside configuration.
Compare with existing curing light source, UV LED surface light source system with offset press has the following advantages: the UV LED area source of offset press both can be spot light, also can be line source and area source, mainly send the light that is fit to emulsion absorbing wavelength in the photoresists, reduce or avoid the light of the non-absorbent wave band of light sensation photo etching.Have the life-span long, energy consumption is low, environmental protection, efficient, pollution-free, does not generate heat basically, the light that sends such as is located substantially in the ultraviolet light wave band at characteristics.
Description of drawings
Fig. 1: the UV LED area source module chip fixing base that is used for offset press
Fig. 2: the UV LED area source module silicones sealing frame that is used for offset press;
Fig. 3 is used for the UV LED area source encapsulation module of offset press
Fig. 4: cooling system;
The specific embodiment
Below, with reference to description of drawings the specific embodiment of the present invention:
1, UV LED area source chip fixing base
UV LED area source chip fixing base is used for fixing the high-power LED chip that sends the various wavelength that are positioned at 200nm～450nm wave band, is plate-shaped member.
The bottom section body material of UV LED area source chip fixing base is an aluminium alloy, also can use high metal material of other heat-conductive characteristic or composite, as red copper, and materials such as pottery.Chip fixed position on the UV LED area source chip fixing base is called the prominent point of gold, and the matrix material of the prominent point of gold is a copper, and the top layer is gold-plated, also can adopt the gold-plated mode of high material of other heat-conductive characteristic and top layer.The gold-plated effect in top layer of the prominent point of gold is when adopting elargol bonding high-power LED chip, can effectively increase the bond effect of high-power LED chip.The bottom section body material of prominent point of gold and UV LED area source chip fixing base is isolated with high-temperature insulation glue, and UV LED area source chip fixing base top layer evenly applies silicon resin glue.
2, driving power source system
Driving power source system is the constant-source with adjustable drive system. and this patent has designed the voltage controlled current source that reversed feedback amplifier combines with constant current device. and constant-current source is by amplifier and adjust the voltage-to-current conversion module that pipe is formed, sampling resistor and the negative feedback loop of forming based on the feedback network of the big device of difference. during operate as normal, the load current I that flows through great power LED produces sampled voltage through sampling resistor, by feedback network its reference voltage with input is compared, the control voltage to current converter was not adjusted output current signal when the two did not wait, thereby change the pressure drop of sampling resistor, pressing the difference with reference voltage until sampling is zero. the output current of constant-current source is only by reference voltage and sampling resistor decision, and and the variation of load resistance irrelevant. single-chip computer control system only need be adjusted the reference voltage output current.
Adopt integrated operational amplifier and high power valve to make main device.Integrated transporting discharging is operated in the closed loop state, external a few resistance, and formation has the degenerative amplifier of the degree of depth, thereby can be used as constant-current source.With the integrated operational amplifier device of making comparisons, help to improve every performance indications of constant-current source.Adjust pipe and adopt high-power MOS enhancement mode FET.FET is different from triode, adopts the field effect of semiconductor surface to carry out work, is voltage control device, because its grid is in state of insulation, input resistance improves greatly, can effectively improve the output accuracy of constant-current source.
3, optical system
The ultraviolet light that optical system can be sent UV LED area source is concentrated and is used for the absorption of photoresists emulsion.The ultraviolet light that sends from great power LED this as diverging light, its angle of divergence depends on the great power LED technical parameter of choosing, at this moment radiation scope is bigger, optical power density is low, single tube great power LED radiant power generally is difficult to satisfy practical requirement.Therefore, must effectively handle the luminous of high-power LED array, realize offset printing efficient fast and effectively to guarantee enough radiation intensity, be the important component part of the UV LED surface light source system of offset press.
The mode that native system has adopted the two-piece type colimated light system to combine with array arrangement, the optical texture design that utilizes the space high-power LED array to distribute realizes that the luminous power of whole great power LEDs on the irradiation face adds up.Great power LED is arranged on the substrate, the employing material is quartz glass, be shaped as ellipsoid, have the reflect focalization optical mirror plane of angle regulating function, and reasonable computation spatial arrangement physical dimension can be controlled beam qualities such as exposure light spot size and uniformities effectively.Simultaneously, regulate each great power LED drive current in the array by controlled constant-current source and can control on the shape of irradiation face and the irradiation face everywhere optical power density, realize irradiation level adjustable spot light, line source and area source.
4, cooling system
Cooling system is mainly realized the efficiently radiates heat of the UV LED area source of offset press, improves the life-span and the luminous efficiency of this new ultra-violet light source.Under the effect of extra electric field, when electronics and hole-recombination, have only 20%～30% energy to be converted into luminous energy, other energy distributes with the form of heat.Cooling system adopts copper product or aluminum or ceramic material, or above different materials mixes the material that the back forms according to a certain percentage.This cooling system implementation: high-power UV LED encapsulation module is fixed on the cooling base closely by screw, is that the fan of direct current or interchange carries out air draught or blowing or water circulation and dispels the heat at the back side of cooling base steady job voltage.
Claims (8)
1. the UV LED area source that is used for offset press, it is a kind of light emitting semiconductor device of direct generation ultraviolet, belong to the offset printing field, main feature is to be that to form peak wavelength be the area source with certain power or the line source of certain wavelength in the 400nm-420nm wave band for the high-power LED chip of 200nm to 450nm according to the integrated emission wavelength of certain ratio.Mainly comprise solid-state semiconductor light-emitting area light source or line source, cooling base, driving power and optical focusing system.
2. the UV LED area source that is used for offset press according to claim 1, it is characterized in that: when the configuration luminescent layer, the high-power LED chip that produces different wave length is according to certain proportional arrangement, the high-power LED chip that mainly with the emission wavelength is certain wavelength in 200nm to the 450nm wave band (such as 403nm, 417nm) is main, and the high-power LED chip of other wavelength is auxilliary in 200nm to the 450nm wave band.
3. the UV LED area source that is used for offset press according to claim 1 is characterized in that: when the configuration luminescent layer, and the form of series connection after the high-power LED chip of various different emission wavelengths adopts the back of connecting earlier in parallel or in parallel earlier.
4. the UV LED area source that is used for offset press according to claim 1 is characterized in that: cooling base adopts red copper material or aluminum or ceramic material, or above different materials mixes the material that the back forms according to a certain percentage.
5. the UV LED area source that is used for offset press according to claim 1, it is characterized in that: the cooling base back is fixed with radiator fan and cools off.
6. the UV LED area source that is used for offset press according to claim 1, it is characterized in that: driving power adopts constant-current source to drive or constant voltage drives, and can adjust the radiation intensity of UV LED area source or line source according to the difference of curing materials by the power output of regulating driving power.
7. the UV LED area source that is used for offset press according to claim 1, it is characterized in that: the application of this light source is that the sensitization colloid is responsive to the light ratio of certain wavelength in 200nm to the 450nm wave band, is the light wave of 403nm, 417nm, 420nm as wavelength.Behind the ultraviolet light of the emulsion absorption specific wavelength in the photoresists crosslinking polymerization curing reaction taking place rapidly, produces the water-insoluble solid material.
8. the UV LED area source that is used for offset press according to claim 1, it is characterized in that: optical focusing system has regulatory function, realizes the radiation intensity of curing light source systems radiate to the substrate surface that is cured, and the size of swept area.
This patent relates to UV LED area source that is used for offset press and preparation method thereof, and the people with laboratory or R﹠D and production experience should understand this patent claim is done suitable modification, also within this patent protection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910199600A CN101706065A (en) | 2009-11-27 | 2009-11-27 | UV LED area source for offset printing press and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910199600A CN101706065A (en) | 2009-11-27 | 2009-11-27 | UV LED area source for offset printing press and manufacturing method thereof |
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| Publication Number | Publication Date |
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| CN101706065A true CN101706065A (en) | 2010-05-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN200910199600A Pending CN101706065A (en) | 2009-11-27 | 2009-11-27 | UV LED area source for offset printing press and manufacturing method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103782200A (en) * | 2011-09-09 | 2014-05-07 | 欧司朗股份有限公司 | An improved occupancy sensor device |
| CN105546362A (en) * | 2016-01-27 | 2016-05-04 | 依瓦塔(上海)精密光电有限公司 | LED optical system for forming uniform and square light spots |
| CN105835524A (en) * | 2016-05-03 | 2016-08-10 | 东莞市雄骏电控设备有限公司 | Light-source rolling projection device |
| CN107191794A (en) * | 2017-06-01 | 2017-09-22 | 深圳市华星光电技术有限公司 | A kind of light fixture |
-
2009
- 2009-11-27 CN CN200910199600A patent/CN101706065A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103782200A (en) * | 2011-09-09 | 2014-05-07 | 欧司朗股份有限公司 | An improved occupancy sensor device |
| CN105546362A (en) * | 2016-01-27 | 2016-05-04 | 依瓦塔(上海)精密光电有限公司 | LED optical system for forming uniform and square light spots |
| CN105546362B (en) * | 2016-01-27 | 2020-11-17 | 江西依瓦塔光电科技有限公司 | LED optical system for forming uniform square light spots |
| CN105835524A (en) * | 2016-05-03 | 2016-08-10 | 东莞市雄骏电控设备有限公司 | Light-source rolling projection device |
| CN105835524B (en) * | 2016-05-03 | 2018-09-11 | 东莞市雄骏电控设备有限公司 | A kind of light source rolling grenade instrumentation |
| CN107191794A (en) * | 2017-06-01 | 2017-09-22 | 深圳市华星光电技术有限公司 | A kind of light fixture |
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Effective date of registration: 20111017 Address after: 214213 Jiangsu city of Yixing province Yixing Jincheng Road Economic Development Zone No. 11 Yixing Park Applicant after: Jiangsu GF Optoelectronics Technology Co., Ltd. Address before: 200433, building 8, building 3, Xiang Yin technology building, No. 920 Xiang Yin Road, Shanghai,, Yangpu District Applicant before: Xu Zhiping |
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Application publication date: 20100512 |