CN101644385A - High-power LED light fitting based on MEMS micro-cooling device radiation - Google Patents
High-power LED light fitting based on MEMS micro-cooling device radiation Download PDFInfo
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- CN101644385A CN101644385A CN200910033086A CN200910033086A CN101644385A CN 101644385 A CN101644385 A CN 101644385A CN 200910033086 A CN200910033086 A CN 200910033086A CN 200910033086 A CN200910033086 A CN 200910033086A CN 101644385 A CN101644385 A CN 101644385A
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- 238000001816 cooling Methods 0.000 title claims abstract description 18
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 40
- 239000010432 diamond Substances 0.000 claims abstract description 40
- 238000007789 sealing Methods 0.000 claims abstract description 10
- 230000017525 heat dissipation Effects 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 7
- 239000011159 matrix material Substances 0.000 claims description 5
- 239000003292 glue Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000002474 experimental method Methods 0.000 abstract 1
- 238000011031 large scale production Methods 0.000 abstract 1
- 230000000191 radiation effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 4
- ORILYTVJVMAKLC-UHFFFAOYSA-N Adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 3
- 229910001573 adamantine Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- CHPZKNULDCNCBW-UHFFFAOYSA-N Gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005323 electroforming Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000000630 rising Effects 0.000 description 2
- 229920002456 HOTAIR Polymers 0.000 description 1
- 210000002381 Plasma Anatomy 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000002860 competitive Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229940044658 gallium nitrate Drugs 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002113 nanodiamond Substances 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
The invention relates to a high-power LED light fitting based on MEMS micro-cooling device radiation, comprising a PCB (5) used for installing an LED chip. The high-power LED light fitting is characterized in that one surface of the PCB (5), which is not provided with the LED chip, is connected with the bottom of a diamond basal body (3); a microfluid radiation channel (1) is arranged on the diamond basal body (3); a sealing board (2) is arranged on the microfluid radiation channel (1); and a microfluid inlet (7) and a microfluid outlet (8) which are communicated with the microfluid radiationchannel (1) is arranged on the sealing board (2). Heat emitted and conducted to the diamond basal body (3) during the use of the LED chip is taken away by the flow of microfluid on the microfluid radiation channel (1). The invention has reasonable design, compact structure, easy manufacture and good radiation effect. The heat emitted when a super-power LED works can be quickly transferred, so theradiation demand of the high-power LED light fitting can be effectively satisfied, and industrial large scale production can be realized on super-power LED street lights. Experiments prove that the radiation efficiency can be increased by more than 50%.
Description
Technical field
The present invention relates to a kind of high-power LED lamp, especially a kind of design and manufacturing process of high-power LED lamp that microfluidic control technology, MEMS, low-grade fever switching technology and LED light fixture manufacturing technology is comprehensive, it belongs to the technical field that fine manufacturing, process for modifying surface and micro-optics technology intersect, specifically a kind of high-power LED lamp based on the MEMS micro-cooling device radiation.
Background technology
Along with the semi-conductive rise of the gallium nitrate based third generation, research blue and white light-emitting diode is successful, and semiconductor lighting has brought the leap again on the human illumination history.Compare with fluorescent lamp with incandescent lamp, series of advantages such as LED is little, all solid state with its volume, long-life, environmental protection, power saving become one of main developing direction of new generation of environment protection lighting source, also are one of the high-tech sectors of tool development prospect of 21 century.National governments pay much attention to, and launch respectively state plan, drop into huge fund and are developed.
Directly the illuminating product that uses blue chip to excite YAG fluorescent material to send white light is referred to as semiconductor lighting product.The White LED illuminating product is compared the 80%-90% that can economize on electricity with traditional incandescent lamp; And the life-span can reach 8-10 ten thousand hours, was more than 10 times of incandescent lamp, and significant advantage such as have energy-conserving and environment-protective, luminous volume is little, reliability is high and the life-span is long is the most competitive green light source product of 21st century.Develop rapidly along with semiconductor technology, the trend of various traditional lighting light source products has appearred tentatively substituting in high-power LED illumination technology at present, countries and regions such as America and Japan Korea Spro and Europe have all been listed it in the state key development plan, research and develop targetedly.Street lighting is the second largest illumination market except that domestic lighting market, but the consumption of electric energy is maximum, so how the various advantages with great power LED apply to this field, thereby reduce use and maintenance cost, life-saving significantly, energy savings becomes very important problem.Semiconductor LED lighting engineering development is very fast since 2000, and the white light LEDs luminous efficiency has reached about 40-60lm/W at present, has had in some special lighting fields very widely to use.But aspect single high power, high brightness, also significantly do not break through, needing very high street lamp field at luminous flux still is to adopt the LED with 1w or 3w to realize the lifting of luminous flux by the mode of assembled arrangement substantially, but thereupon will bring very many problems aspect heat radiation.
In 20 end of the centurys, Lumileds Lighting company encapsulates out first watt class large power LED, and the power of LED is jumped above 1000mW from tens milliwatts, and the luminous flux of single led device is also from reaching tens lm less than a lm leap.At present, high-brightness white-light LED has reached the level of 100lm/W in the laboratory, and the large power white light LED of 50lm/W also enters commercialization.For the W level (〉=1W) for the high-capacity LED, present electro-optical efficiency is about 15%, remaining 85% is converted into heat energy, and chip size only is 1mm * 1mm～215mm * 215mm, the power density that is to say chip is very big, how improving the heat-sinking capability of great power LED, is that LED device packages and devices is used the key problem that design will solve.
Light emitting diode is a kind of injection lelctroluminescence device, is made by the III2V compounds of group.Under the extra electric field effect, the radiation recombination in electronics and hole and the electricity that takes place cause effect 10%～15% of energy are converted into luminous energy, and the vibration of the lattice of radiationless compound generation is converted into heat energy with all the other energy of 85%～90%.Different with traditional illuminating device, do not comprise infrared part in the luminescent spectrum of white light LEDs, so its heat can not rely on radiation to discharge.
For single led, if concentrating in the small-sized chip, heat can not effectively shed, then can cause chip temperature to raise, the non-uniform Distribution, chip light emitting efficient and the fluorescent material that cause thermal stress swash penetrates decrease in efficiency.Studies show that when temperature surpasses certain value, the crash rate of device will be index law and rise 2 ℃ of the every risings of component temperature, reliability decrease 10%.In order to guarantee the life-span of device, generally require pn knot junction temperature below 110 ℃.Along with the temperature rise of pn knot, red shift will take place in the emission wavelength of white light LED part.Statistics shows, under 100 ℃ temperature, wavelength can red shift 4～9nm, thereby causes YAG fluorescent material absorptivity to descend, and total luminous intensity can reduce, white light colourity variation.Near room temperature, 1 ℃ of the every rising of temperature, the luminous intensity of LED can correspondingly reduce about 1%.When a plurality of LED dense arrangement were formed white lumination system, the dissipation problem of heat was more serious.Therefore solve heat dissipation problem and become the prerequisite that power-type LED is used.
Adopt at present many heat dissipation technologys to have the means such as area of dissipation of air-cooled, water-cooled, increase shell to come distribute heat.These traditional heat dissipation technology pluses and minuses are obvious equally: wind-cooling heat dissipating is that radiating effect is best at present, but maximum shortcoming is a fan need consume energy and also its life-span often not long, life-span is at most about 5000 hours in theory, but the various dust quantity on the actual cities road are a lot, thereby the rotating vane that is very easy to block fan at the use dust makes it not reach the theoretical life-span, the brightness of light source is with very fast decay and final the damage, so the factor of comprehensive each side sees not to be optimal mode if fan damages; The water-cooling effect secondly, if but the water temperature that is used to dispel the heat behind the light source long-play will significantly rise, radiating effect will sharply descend, moreover also will consider how to guarantee that heat eliminating medium-water can not leak the problem that other parts is produced shadow, equally neither very desirable radiating mode; The effect that the mode of increase shell area of dissipation is dispelled the heat is the poorest, but comprehensively sees still reasonable mode, and shortcoming is that the general power of heat radiation is little, and metal material uses more, causes the weight of whole finished product very heavy, and outward appearance is relatively heavier.This also is that the power of LED street lamp of the practicability on the market is all little, and power seldom surpasses the reason of 25w.
Diamond be at present known to one of heat conductivility best material, but because diamond body MEMS cost height seldom is used for the heat radiation of simple electronic devices and components.The present invention proposes a kind of heat dissipation technology based on diamond body MEMS, is intended to solve the heat dissipation problem of great power LED.Simultaneously, the present invention proposes to make microfluidic channel on diamond body, and high heat transfer dielectric material (thermal medium oil) or water etc. directly flow in the fluid passage, the exchange of conducting heat, the radiating effect of raising great power LED.
Summary of the invention
The objective of the invention is at present high-powered LED lamp radiating effect undesirablely and influence result of use and be difficult to guarantee the problem in service life, a kind of high-power LED lamp based on the MEMS micro-cooling device radiation is provided.The present invention can use the MEMS structure of diamond body, also can be on substrate directly coating diamond or diamond-like coating form the heat-conducting medium layer.
Technical scheme of the present invention is:
A kind of high-power LED lamp based on the MEMS micro-cooling device radiation, comprise the pcb board 5 that is used to install led chip, it is characterized in that described pcb board 5 do not install the one side of led chip and link to each other with the bottom of diamond body 3, on described diamond body 3, be provided with microfluid heat dissipation channel 1, sealing plate 2 is installed on the microfluid heat dissipation channel 1, sealing plate 2 is provided with that the microfluid that communicates with microfluid heat dissipation channel 1 enters hole 7 and microfluid portals 8, takes away at the heat that the led chip use is sent and is transmitted on the diamond body 3 that flows of microfluid heat dissipation channel 1 by microfluid.
Described microfluid heat dissipation channel 1 is continuous S shape and is arranged on the diamond body 3.
Described diamond body 3 links to each other with pcb board 5 bondings that led chip is installed by heat-conducting glue 4.
Described diamond body 3 links to each other with the pcb board 5 that led chip is installed by connecting bolt 6.
Described microfluid is a kind of medium of high conduction, and the height of the little matrix 3 of described diamond is the 10-500 micron.
The invention has the beneficial effects as follows:
The present invention is reasonable in design, compact conformation, be easy to make, good heat dissipation effect; The heat that sends in the time of can migrating out super-high-power LED work rapidly can satisfy the needs that high-power LED lamp dispels the heat effectively, can make ultra-high power LED street lamp realize large-scale industrialization production.Experimental results show that the present invention can improve radiating efficiency more than 50%.
Description of drawings
One of Fig. 1 structural representation of the present invention.
Two of Fig. 2 structural representation of the present invention.
The structural representation of Fig. 3 microfluid radiator of the present invention.
Fig. 4 is the A-A cutaway view of Fig. 3 of reflection microfluid heat dissipation channel structure of the present invention.
The specific embodiment
The present invention is further illustrated below in conjunction with drawings and Examples.
Embodiment one.
Shown in Fig. 1,3,4.
A kind of high-power LED lamp based on the MEMS micro-cooling device radiation, comprise the pcb board 5 that is used to install led chip, the one side that described pcb board 5 is not installed led chip linked to each other with diamond body 3 end mutually, on described diamond body 3, be provided with continuous S-shaped microfluid heat dissipation channel 1 (as Fig. 4), sealing plate 2 is installed on the microfluid heat dissipation channel 1, sealing plate 2 is provided with that the microfluid that communicates with microfluid heat dissipation channel 1 enters hole 7 and microfluid portals 8, takes away at the heat that the led chip use is sent and is transmitted on the diamond body 3 that flows of microfluid heat dissipation channel 1 by microfluid.Diamond body 3 can link to each other with the pcb board that led chip is installed 5 bondings by heat-conducting glue 4 during concrete enforcement, as shown in Figure 1.Microfluid can adopt the medium (thermal medium oil, water) of high conduction, and the height of the little matrix 3 of described diamond is 10～500 microns, as Fig. 3.
Embodiment two.
Shown in Fig. 2,3,4.
A kind of high-power LED lamp based on the MEMS micro-cooling device radiation, comprise the pcb board 5 that is used to install led chip, the one side that described pcb board 5 is not installed led chip linked to each other with diamond body 3 end mutually, on described diamond body 3, be provided with continuous S-shaped microfluid heat dissipation channel 1 (as Fig. 4), sealing plate 2 is installed on the microfluid heat dissipation channel 1, sealing plate 2 is provided with that the microfluid that communicates with microfluid heat dissipation channel 1 enters hole 7 and microfluid portals 8, takes away at the heat that the led chip use is sent and is transmitted on the diamond body 3 that flows of microfluid heat dissipation channel 1 by microfluid.Diamond body 3 can link to each other with the pcb board that led chip is installed 5 bondings by connecting bolt 6 during concrete enforcement, as shown in Figure 2.Microfluid can adopt the medium (thermal medium oil, water) of high conduction, and the height of the little matrix 3 of described diamond is 10～500 microns, as Fig. 3.
The present invention is a kind of heat dissipation design that solves high-power LED street lamp.LED is fixed on the PCB substrate of alumina-base material, and simultaneously at the another side of pcb board, fixedly connected micro cooler part by design of diamond body material and manufacturing connects by the gluing of high heat conduction between pcb board and the diamond cooler.In the use of LED light fixture, the heat that LED distributes connects on the aluminium sheet by the pin that pin is delivered to PCB, and the too much heat of aluminium sheet is delivered on adamantine little radiator by heat-conducting glue simultaneously.The light fixture indoor gas is taken away the heat of LED by little heat abstractor, reaches the purpose of the heat that reduces the LED light fixture.
The another kind of implementation method of invention utilizes the method for microfabrication directly to make micro-cooling device on pcb board, and the direct and pcb board welding with the LED pin.Micro-cooler device adopts the method for miniature electroforming and deposition of diamond coatings to obtain.
Inventing a kind of implementation is the homonymy that micro-cooler device and LED device are fixed on pcb board, by aluminium sheet heat conduction, the air in lamp chamber sucks micro-cooler device, and cold air and micro-cooler device are carried out heat exchange and become hot-air outside the opening by lamp chamber wall is dispersed into, and reach the purpose of heat radiation.
The present invention is based on adamantine microfluid cooling device, microfluid is a kind of medium (thermal medium oil, water) of high conduction.Diamond microfluidic device size is between 10 microns-500 microns.
Radiating element based on microfluid of the present invention, adamantine film can adopt methods such as microwave plasma chemical vapour deposition, hot-wire chemical gas-phase deposition, low-temperature plasma assistant chemical vapor deposition, physical vapour deposition (PVD) to obtain.
Matrix material of the present invention can diamond thin, also can be DLC film.
Heat-conductive diamond film of the present invention can Nano diamond plating/electroforming method obtain on the micro element surface.
Claims (6)
1, a kind of high-power LED lamp based on the MEMS micro-cooling device radiation, comprise the pcb board (5) that is used to install led chip, it is characterized in that described pcb board (5) do not install the one side of led chip and link to each other with the bottom of diamond body (3), on described diamond body (3), be provided with microfluid heat dissipation channel (1), sealing plate (2) is installed on the microfluid heat dissipation channel (1), sealing plate (2) is provided with that the microfluid that communicates with microfluid heat dissipation channel (1) enters hole (7) and microfluid portals (8), takes away at the heat that the led chip use is sent and is transmitted on the diamond body (3) that flows of microfluid heat dissipation channel (1) by microfluid.
2, the high-power LED lamp based on the MEMS micro-cooling device radiation according to claim 1 is characterized in that described microfluid heat dissipation channel (1) is continuous S shape and is arranged on the diamond body (3).
3, the high-power LED lamp based on the MEMS micro-cooling device radiation according to claim 1 is characterized in that described diamond body (3) links to each other with pcb board (5) bonding that led chip is installed by heat-conducting glue (4).
4, the high-power LED lamp based on the MEMS micro-cooling device radiation according to claim 1 is characterized in that described diamond body (3) links to each other with the pcb board (5) that led chip is installed by connecting bolt (6).
5, the high-power LED lamp based on the MEMS micro-cooling device radiation according to claim 1 is characterized in that described microfluid is a kind of medium of high conduction, and the height of the little matrix of described diamond (3) is 10～500 microns.
6, the high-power LED lamp based on the MEMS micro-cooling device radiation according to claim 1 is characterized in that described diamond body material directly is deposited on PCB substrate surrounding heat eliminating medium coating.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910033086A CN101644385A (en) | 2009-06-11 | 2009-06-11 | High-power LED light fitting based on MEMS micro-cooling device radiation |
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| CN200910033086A CN101644385A (en) | 2009-06-11 | 2009-06-11 | High-power LED light fitting based on MEMS micro-cooling device radiation |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102478184A (en) * | 2010-11-25 | 2012-05-30 | 西安大昱光电科技有限公司 | LED (light emitting diode) illumination street lamp |
| CN103460068A (en) * | 2010-09-14 | 2013-12-18 | 六号元素有限公司 | A microfluidic cell and a spin resonance device for use therewith |
| CN104763954A (en) * | 2015-04-15 | 2015-07-08 | 东莞市闻誉实业有限公司 | Indoor ceiling lamp |
| CN104776358A (en) * | 2015-04-15 | 2015-07-15 | 东莞市闻誉实业有限公司 | Garden lamp |
| CN104896364A (en) * | 2015-04-15 | 2015-09-09 | 东莞市闻誉实业有限公司 | Stair lamp |
| CN105032518A (en) * | 2015-07-03 | 2015-11-11 | 中国科学院理化技术研究所 | Micro-fluidic chip heat dissipation device, and manufacturing method thereof |
| CN106840438A (en) * | 2017-02-23 | 2017-06-13 | 西安交通大学 | A kind of W-Re film temperature sensor cold junction compensation structure based on fluid channel |
| CN110010567A (en) * | 2018-12-31 | 2019-07-12 | 杭州臻镭微波技术有限公司 | A kind of liquid-cooling heat radiation interconnection architecture of high-power system grade radio-frequency module and preparation method thereof |
| CN112234037A (en) * | 2020-09-17 | 2021-01-15 | 中国电子科技集团公司第五十五研究所 | Embedded diamond silicon-based micro-fluid heat dissipation adapter plate and preparation method thereof |
-
2009
- 2009-06-11 CN CN200910033086A patent/CN101644385A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103460068A (en) * | 2010-09-14 | 2013-12-18 | 六号元素有限公司 | A microfluidic cell and a spin resonance device for use therewith |
| CN102478184A (en) * | 2010-11-25 | 2012-05-30 | 西安大昱光电科技有限公司 | LED (light emitting diode) illumination street lamp |
| CN104763954A (en) * | 2015-04-15 | 2015-07-08 | 东莞市闻誉实业有限公司 | Indoor ceiling lamp |
| CN104776358A (en) * | 2015-04-15 | 2015-07-15 | 东莞市闻誉实业有限公司 | Garden lamp |
| CN104896364A (en) * | 2015-04-15 | 2015-09-09 | 东莞市闻誉实业有限公司 | Stair lamp |
| CN105032518A (en) * | 2015-07-03 | 2015-11-11 | 中国科学院理化技术研究所 | Micro-fluidic chip heat dissipation device, and manufacturing method thereof |
| CN106840438A (en) * | 2017-02-23 | 2017-06-13 | 西安交通大学 | A kind of W-Re film temperature sensor cold junction compensation structure based on fluid channel |
| CN106840438B (en) * | 2017-02-23 | 2019-04-12 | 西安交通大学 | A kind of W-Re film temperature sensor cold junction compensation structure based on fluid channel |
| CN110010567A (en) * | 2018-12-31 | 2019-07-12 | 杭州臻镭微波技术有限公司 | A kind of liquid-cooling heat radiation interconnection architecture of high-power system grade radio-frequency module and preparation method thereof |
| CN110010567B (en) * | 2018-12-31 | 2021-02-09 | 浙江臻镭科技股份有限公司 | Liquid cooling heat dissipation interconnection structure of high-power system-level radio frequency module and manufacturing method thereof |
| CN112234037A (en) * | 2020-09-17 | 2021-01-15 | 中国电子科技集团公司第五十五研究所 | Embedded diamond silicon-based micro-fluid heat dissipation adapter plate and preparation method thereof |
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Open date: 20100210 |