CN101697364B - Method for improving performance of microcrystalline silicon film solar cell deposited in single chamber - Google Patents
Method for improving performance of microcrystalline silicon film solar cell deposited in single chamber Download PDFInfo
- Publication number
- CN101697364B CN101697364B CN2009100710527A CN200910071052A CN101697364B CN 101697364 B CN101697364 B CN 101697364B CN 2009100710527 A CN2009100710527 A CN 2009100710527A CN 200910071052 A CN200910071052 A CN 200910071052A CN 101697364 B CN101697364 B CN 101697364B
- Authority
- CN
- China
- Prior art keywords
- film solar
- solar cell
- microcrystalline silicon
- silicon film
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for improving performance of a microcrystalline silicon film solar cell deposited in a single chamber. The method for preparing the microcrystalline silicon film solar cell comprises the steps of: processing a phosphoric region in a reaction chamber by means of a cavity chamber glow after the deposition of n layers of the cell and before the next cell enters the reaction chamber, and then depositing p-layer material of the new cell. The method has the advantages that a technique for performing the phosphorus pollution processing on the cavity chamber glow by utilizing reactive gas used for in-situ deposition of the microcrystalline silicon film solar cell after the single-chamber deposition of n layers of the cell and before the next cell enters the reaction chamber is adopted so as to diminish the influence on the p-layer material property of the subsequently deposited next cell. The method increases neither the equipment upgrading investment nor additional other nonreactive gas, and can effectively reduce phosphorus pollution and improve cell efficiency.
Description
[technical field]
The invention belongs to technical field of solar cells, particularly a kind of method of improving performance of microcrystalline silicon film solar cell deposited in single chamber.
[background technology]
Silicon-film solar-cell has more potentiality aspect reducing cost, become one of research direction of photovoltaic cell.At present, deposited in single chamber amorphous silicon film solar battery industrialization.Amorphous/crystalline/micro-crystalline silicon laminated battery becomes the focus of research because of it has higher transformation efficiency; But mostly the research of microcrystalline silicon (nano silicon-based) thin film solar cell is successive sedimentation in a plurality of chambers and gets; Equipment cost is high; System's control is complicated with maintenance, increased the industrialization difficulty, so single chamber microcrystalline silicon (nano silicon-based) thin film solar cell causes people's greater attention.The deposited in single chamber silicon-based thin film solar cell is exactly in same chamber, to deposit p layer, i layer and n layer, will inevitably bring cross-contamination issue.Particularly for microcrystalline silicon (nano silicon-based) thin film solar cell, because the order of itself, promptly doping efficiency makes that than higher the pollution of the impurity that these " are not intended to " is even more serious.For p-i-n type solar cell, the residual influence of n layer doping agent phosphorus in the chamber can influence the p layer characteristic of next battery to a great extent.Specifically: microcrystalline silicon (nano silicon-based) thin film solar cell will seek out high conversion efficiency usually; The conductivity of p layer material will reach about 1s/cm; And if the phosphorus pollution is not administered, the characteristic of its p layer material that deposits subsequently will reduce nearly 4 magnitudes so.Such p material is used for microcrystalline silicon (nano silicon-based) thin film solar cell, with the internal electric field that reduces entire cell, thereby shortens electron lifetime, reduces the separation of efficient carrier, and then reduces the collection efficiency of solar cell.Therefore, this just needs badly in deposited in single chamber, need take effective measures and reduces the phosphorus pollution, thereby improves battery performance.
For deposited in single chamber amorphous silicon-based film solar cell; The method that traditional processing phosphorus pollutes technology is exactly through a large amount of gas bleeds; This technology is for the certain effect that deposits of amorphous silicon-based film solar cell; But for microcrystalline silicon (nano silicon-based) thin film solar cell, gas bleed can not well address this problem simply.For obtaining high efficiency microcrystalline silicon (nano silicon-based) thin film solar cell, the phosphorus that we propose to adopt plenum chamber aura technology to reduce deposited in single chamber pollutes so that obtain high efficiency microcrystalline silicon (nano silicon-based) thin film solar cell.
[summary of the invention]
The present invention seeks to above-mentioned existing problems; A kind of open circuit voltage and method of improving performance of microcrystalline silicon film solar cell deposited in single chamber of the photoelectric conversion efficiency of short-circuit current density and then raising battery through improving battery is provided; This method need not introduced other extra nonreactive gas; New equipment need be do not increased, and battery efficiency can be improved greatly.
Technical scheme of the present invention:
A kind of method of improving performance of microcrystalline silicon film solar cell deposited in single chamber; In the preparation method of microcrystalline silicon film solar cell; After having deposited the n layer of battery and next battery when also not entering into reative cell; Adopt plenum chamber aura mode to carry out the processing in phosphorous zone in the reaction chamber, and then deposit the p layer material of new battery.
Said employing plenum chamber aura mode is carried out the technological parameter that handle in phosphorous zone in the reaction chamber: reacting gas pressure 0.3Torr-10Torr, substrate surface temperature are 100 ℃-300 ℃, glow power density 0.1W/cm
2～2W/cm
2, aura driving frequency 13.56MHz-100MHz, electrode spacing be that 5mm-25mm, processing time are less than 30min.
Said reacting gas is a silane, the gaseous mixture of hydrogen or silane and hydrogen arbitrary proportion.
Said microcrystalline silicon film solar cell comprises nano silicon-based thin film solar cell.
The said method of improving performance of microcrystalline silicon film solar cell deposited in single chamber both had been applicable to unijunction microcrystalline silicon film solar cell battery, also was applicable to by its binode that constitutes or three knot lamination microcrystalline silicon film solar cells.
Operation principle of the present invention:
The present invention is directed to microcrystalline silicon film solar cell deposited in single chamber existing phosphorus pollution problem when depositing different battery; The phosphorus that proposes to adopt the used reacting gas of original position microcrystalline silicon (nano silicon-based) thin film solar cell deposition to carry out the plenum chamber aura pollutes treatment technology; This technological basic principle is: the mode of utilizing the plenum chamber aura is with possibly being covered or etching by the place that phosphorus pollutes in the reaction chamber; In the time of can suppressing to deposit subsequently next battery like this to the influence of p layer material characteristic, thereby improve the photoelectric conversion efficiency of monolocular precipitation microcrystal silicon-based (nano silicon-based) thin film solar cell.Wherein, the preparation method of microcrystalline silicon (nano silicon-based) thin film solar cell comprises that radio frequency plasma strengthens chemical vapour deposition (CVD) (RF-PECVD), hot-wire chemical gas-phase deposition (HWCVD) and very high frequency plasma and strengthens chemical vapour deposition (CVD) (VHF-PECVD).
Advantage of the present invention and good effect: on the present invention has deposited in single chamber behind the n layer of a battery; Before next battery gets into reative cell; The phosphorus that only adopts the used reacting gas of original position microcrystalline silicon (nano silicon-based) thin film solar cell deposition to carry out the plenum chamber aura pollutes treatment technology, so that reduce the influence to the p layer material characteristic that deposits next battery subsequently.This method neither increases new scrap build investment, need not introduce other extra nonreactive gas again, and can effectively reduce phosphorus and pollute, and improves battery efficiency simultaneously.
[embodiment]:
Embodiment 1: preparation unijunction p/i/n type microcrystalline silicon solar cell in single chamber
A kind of method of improving performance of microcrystalline silicon film solar cell deposited in single chamber; May further comprise the steps: after a last battery n layer has deposited; When next battery does not also enter into reative cell; Carry out the empty chamber aura of crystallite condition and handle, concrete treatment conditions are following: the silane gas flow is that 4SCCM, hydrogen gas flow are 196SCCM, to answer reaction pressure in the chamber be that 1.8Torr, substrate surface temperature are that 190 ℃, glow power are 0.2W/cm in the reaction gas
2, the aura driving frequency is that 75MHz, electrode spacing are that 15mm, sedimentation time are 4min; The p properties of materials of the next battery of deposition is 0.6S/cm then.Testing result shows: the p material with there not being phosphorus pollution control preparation is compared, and conductivity has improved 3 magnitudes, SnO on this p layer material basis
2For the fundamental characteristics of substrate deposition battery is: Jsc=17.25mA/cm
2, Voc=0.434V, FF=0.57, Efficiency=4.26%, compare with the battery performance that does not have phosphorus pollution control preparation: current density has improved nearly 2 times, and open circuit voltage has improved 1 times, and efficient has improved 7 times.
Embodiment 2: preparation p/i/n type double junction non-crystal silicon/crystalline/micro-crystalline silicon laminated solar battery in single chamber
A kind of method of improving performance of microcrystalline silicon film solar cell deposited in single chamber; May further comprise the steps: after a last battery n layer has deposited; When next battery does not also enter into reative cell; Carry out the pure hydrogen aura in certain empty chamber and handle, concrete treatment conditions are following: hydrogen flowing quantity is 200SCCM in the reaction gas, to answer the reaction pressure in the chamber be that 6.0Torr, substrate surface temperature are 200 ℃, glow power 1W/cm
2, the aura driving frequency is that 75MHz, electrode spacing are that 8mm, aura time are 10min; The p properties of materials of the next battery of deposition is 0.36S/cm then.Testing result shows: the p material with there not being phosphorus pollution control preparation is compared, and conductivity has improved 3 magnitudes, and the fundamental characteristics of the amorphous silicon/microcrystalline silicon tandem battery that on this p layer material basis, prepares is: Jsc=12.96mA/cm
2, Voc=1.33V, FF=0.60, Efficiency=10.3%, compare with the battery performance that does not have phosphorus pollution control preparation: current density has improved nearly 1.6 times, and open circuit voltage has improved 0.4 times, and efficient has improved 2 times.
Embodiment 3: preparation p/i/n type amorphous silicon // amorphous silicon/microcrystal silicon three-layer stacked solar cell in single chamber
A kind of method of improving performance of microcrystalline silicon film solar cell deposited in single chamber; May further comprise the steps: after a last battery n layer has deposited; When next battery does not also enter into reative cell; Carry out certain empty chamber aura and handle, concrete treatment conditions are following: silane flow rate is 3SCCM in the reaction gas, to answer the reaction pressure in the chamber be that 0.5Torr, substrate surface temperature are 175 ℃, glow power 0.5W/cm
2, the aura driving frequency is that 75MHz, electrode spacing are that 22mm, aura time are 5min; The p properties of materials of the next battery of deposition is 0.5S/cm then.Testing result shows: the p material with there not being phosphorus pollution control preparation is compared, and conductivity has improved 3 magnitudes, and the fundamental characteristics of the p/i/n type amorphous silicon // amorphous silicon/microcrystal silicon three-layer stacked solar cell that on this p layer material basis, prepares is: Jsc=7.37mA/cm
2, Voc=2.127V, FF=0.55, Efficiency=8.6%, compare with the battery performance that does not have phosphorus pollution control preparation: current density has improved nearly 2 times, and open circuit voltage has improved 0.3 times, and efficient has improved 1.6 times.
The above; Be merely the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, any technical staff who is familiar with the present technique field is in the technical scope that the present invention discloses; The variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claim.
Claims (5)
1. method of improving performance of microcrystalline silicon film solar cell deposited in single chamber; It is characterized in that: in the preparation method of microcrystalline silicon film solar cell; After having deposited the n layer of battery and next battery when also not entering into reative cell; Adopt plenum chamber aura mode to carry out the processing in phosphorous zone in the reaction chamber, and then deposit the p layer material of new battery.
2. according to the said method of improving performance of microcrystalline silicon film solar cell deposited in single chamber of claim 1, it is characterized in that: said employing plenum chamber aura mode is carried out the technological parameter that handle in phosphorous zone in the reaction chamber and is: reacting gas pressure 0.3Torr-10Torr, substrate surface temperature are 100 ℃-300 ℃, glow power density 0.1W/cm
2～2W/cm
2, aura driving frequency 13.56MHz-100MHz, electrode spacing be that 5mm-25mm, processing time are less than 30min.
3. according to the said method of improving performance of microcrystalline silicon film solar cell deposited in single chamber of claim 2, it is characterized in that: said reacting gas is the gaseous mixture of silane, hydrogen or silane and hydrogen arbitrary proportion.
4. according to the said method of improving performance of microcrystalline silicon film solar cell deposited in single chamber of claim 1, it is characterized in that: said microcrystalline silicon film solar cell comprises nano silicon-based thin film solar cell.
5. according to the said method of improving performance of microcrystalline silicon film solar cell deposited in single chamber of claim 1; It is characterized in that: the said method of improving performance of microcrystalline silicon film solar cell deposited in single chamber; Both be applicable to unijunction microcrystalline silicon film solar cell battery, also be applicable to by its binode that constitutes or three knot lamination microcrystalline silicon film solar cells.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100710527A CN101697364B (en) | 2009-10-30 | 2009-10-30 | Method for improving performance of microcrystalline silicon film solar cell deposited in single chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100710527A CN101697364B (en) | 2009-10-30 | 2009-10-30 | Method for improving performance of microcrystalline silicon film solar cell deposited in single chamber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101697364A CN101697364A (en) | 2010-04-21 |
| CN101697364B true CN101697364B (en) | 2012-03-21 |
Family
ID=42142459
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009100710527A Active CN101697364B (en) | 2009-10-30 | 2009-10-30 | Method for improving performance of microcrystalline silicon film solar cell deposited in single chamber |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101697364B (en) |
-
2009
- 2009-10-30 CN CN2009100710527A patent/CN101697364B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN101697364A (en) | 2010-04-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102097541B (en) | Method for enhancing efficiency of industrial single-chamber deposited amorphous silicon-based solar cell | |
| CN101556971B (en) | Back reflector for silicon-based thin film solar cell and preparation method thereof | |
| CN102208477B (en) | Amorphous silicon/microcrystalline silicon laminated solar cell and preparation method thereof | |
| CN101510566B (en) | Wide bandgap N type nanometer silicon material for silicon film solar battery and preparation method | |
| CN101807618B (en) | Novel laminated film solar cell and manufacturing method thereof | |
| CN101562220B (en) | Process for manufacturing amorphous silicon thin film solar cell | |
| CN102983215A (en) | Method for preparing silicon thin-film solar cells with silicon nano-wire structures | |
| CN106449850B (en) | A kind of efficient silicon based hetero-junction double-side cell and preparation method thereof | |
| CN102916060B (en) | Silicon-based thin-film solar cell and preparation method thereof | |
| CN101431128B (en) | Production method of amorphous silicon laminated solar cell | |
| CN102214737B (en) | Preparation method of compound thin film for solar battery | |
| CN102157614B (en) | Method for improving performance of amorphous silicon/microcrystalline silicon tandem solar cell | |
| CN101540345B (en) | Nanometer silica film three-layer stacked solar cell and preparation method thereof | |
| Bin Mohd Zulkifly et al. | Impact of bilayer structures on the surface passivation quality of high‐rate‐sputtered hydrogenated amorphous silicon for silicon heterojunction solar cells | |
| CN101697364B (en) | Method for improving performance of microcrystalline silicon film solar cell deposited in single chamber | |
| CN104319306A (en) | Efficient laminated thin film solar cell and preparing method thereof | |
| CN102437224A (en) | Amorphous silicon film battery of Schottky structure with dielectric layer and production method | |
| CN102024676A (en) | Method for manufacturing semiconductor device in single-chamber reactor | |
| Lin et al. | Optimization of recombination layer in the tunnel junction of amorphous silicon thin-film tandem solar cells | |
| CN104393120B (en) | Preparation method and purpose of top cell P type layer of amorphous silicon germanium thin-film solar cell | |
| CN203573991U (en) | Multi-junction multi-lamination-layer silicon-based film solar cell | |
| CN102212797A (en) | Hydrogen-free diluting preparation method of high-quality amorphous silicon intrinsic layer | |
| CN102751372A (en) | a-Si/muc-SiGe laminated solar cell with N-I-P tunnel junction and manufacture method thereof | |
| CN203325950U (en) | Multi-band-gap double-face light-transmission solar cell | |
| CN102496647A (en) | Amorphous silicon film cell additionally equipped with electrode modification layer and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |