CN101697087B - high-precision low-drift integrated voltage reference source circuit - Google Patents

high-precision low-drift integrated voltage reference source circuit Download PDF

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CN101697087B
CN101697087B CN2009103095182A CN200910309518A CN101697087B CN 101697087 B CN101697087 B CN 101697087B CN 2009103095182 A CN2009103095182 A CN 2009103095182A CN 200910309518 A CN200910309518 A CN 200910309518A CN 101697087 B CN101697087 B CN 101697087B
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circuit
npn
resistance
pipe
current
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CN101697087A (en
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马奎
杨发顺
丁召
傅兴华
林洁馨
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Guizhou University
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Guizhou University
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Abstract

The invention discloses a high-precision low-drift integrated voltage reference source circuit which comprises a PTAT generation circuit (1), a voltage booster circuit (2), a current feedback circuit (3), an overheating protection circuit (4), a heavy-current drive and overcurrent protection current (5), a power supply voltage distributing circuit (6) and an output drive and reverse connection protection circuit (7), wherein the PTAT generation circuit (1) is used for generating PTAT current; the voltage booster circuit (2) is used for boosting PTAT voltage and realizing the starting separation of the circuit; the current feedback circuit (3) is used for stabilizing output voltage and improving the temperature stability of the current of the circuit; the overheating protection circuit (4) is used for the overheating protection of an output pipe; the heavy-current drive and overcurrent protection current (5) is used for adjusting the output voltage of the output pipe during heavy-load current and the overcurrent protection of a transistor in a heavy-current drive circuit; the power supply voltage distributing circuit (6) is used for improving the DC power supply rejection characteristic of output reference voltage; and the reverse connection protection circuit (7) is used for reinforcing the drive capacity of an output reference and the reverse connection protection of the circuit.

Description

High-precision low-drift integrated voltage reference source circuit
Technical field
The present invention relates to the integrated reference voltage source circuit of a kind of simulation.
Background technology
Reference voltage source (voltage references) is meant the high precision that is used as Voltage Reference, the voltage source of high stability, and desirable reference voltage is an amount that has nothing to do with power supply, temperature, load variations.Reference voltage source is the very important ingredient of modern mimic channel, and it has vital role to the application and the development of high-new Analog Electronics Technique.In many mimic channels, as all needing the voltage-reference of high precision, high stability in digital to analog converter (DAC), analog to digital converter (ADC), linear voltage regulator and the switching regulator.Particularly in precision measuring instrument instruments and meters and modern digital communication systems, often the benchmark of integrated voltage reference source as systematic survey and calibration.
The sustained, stable growth of world semiconductor industry will drive further developing of global electronic information products market; Communication, consumer portable type electronic product and vehicle electric field will become the guide; External many Analogous Integrated Electronic Circuits manufacturer is like the release one after another high precision integrated voltage reference product of numerous species of ADI (ADI), companies such as (TI) of Texas Instrument.The product overwhelming majority on the home market is the product of above-mentioned company; Domestic enterprise just is integrated in reference voltage source in other IC chips; Rather than introduce it to the market as a simple universal product, this has just limited the usable range of reference voltage source greatly.Along with the develop rapidly and the widespread use of MCM (multi-chip module) technology, research single-chip integrated voltage reference source to China's national defense industry with communicate by letter, the development of consumer portable type electronic product and automotive electronics market has the ten minutes significant meaning.
From the principle of work angle, the problem that designs integrated reference voltage source most critical is high precision and low-temperature coefficient.In order to realize high precision; Normally utilize the intrinsic character voltage of silicon semiconductor material itself as reference voltage; Early 1970s; Notion that Widlar at first proposes bandgap voltage reference and basic design philosophy, bandgap voltage reference be because in the advantage of aspects such as supply voltage, power consumption, stability, and obtained using widely.In order to obtain low temperature coefficient, Many researchers has been carried out a large amount of research in this respect, and for example Timothy utilizes " Δ V BELadder " (Δ V BELadder) technology energy gap benchmark that is designed is carried out high-order temperature compensated, thereby the temperature coefficient of energy gap benchmark is reduced to below 5ppm/ ℃.But these research conclusions of report are based on the result of the emulation of CMOS technology basically.The highest withstand voltage generally about 18V in the conventional cmos technology between the D-S of MOSFET, current driving ability is not strong, and the highest withstand voltage 36V that can reach between the C-E of bipolar transistor, even high to 80V.And bipolar transistor itself is exactly the current drive-type device, more is applicable to the circuit of handling big electric current.
Summary of the invention
The technical matters that the present invention will solve is: a kind of high-precision low-drift integrated voltage reference source circuit is provided; This circuit has the precision height, power range is wide, driving force is strong, line-voltage regulation is low, temperature coefficient is little and defencive function is perfect, to overcome the deficiency that prior art exists.
Technical scheme of the present invention is following: it comprises
The PTAT current generating circuit is used to produce the PTAT electric current;
Voltage lifting circuit is used to promote PTAT voltage, has realized that the startup of circuit is isolated;
Current feedback circuit is used for regulated output voltage, improves the temperature stability of its electric current;
Overheating protection circuit is used for the overheating protection of efferent duct;
Big current drives and current foldback circuit, the output voltage of efferent duct when being used to adjust large load current; Be used for the transistorized overcurrent protection of big current driving circuit;
The supply voltage distributor circuit is used to improve the direct supply rejection characteristic of output reference voltage;
Output drives and reverse-connection protection circuit, is used to strengthen the driving force and the circuit reverse connecting protection of output reference.
Described PTAT current generating circuit is by resistance R 0, R 2, R 3With NPN pipe Q 1, Q 2Form; NPN manages Q 1, Q 2And resistance R 0Constitute micro-current source, resistance R 2An end be connected NPN pipe Q 2Collector on, resistance R 3An end be connected NPN pipe Q 1Collector on, resistance R 2, R 3The other end link together;
Described voltage lifting circuit comprises resistance R 1With NPN pipe Q 9, Q 10, Q 11NPN manages Q 10And Q 11Constitute Darlington configuration, the base stage of this Darlington configuration and collector short circuit, NPN manages Q 9Emitter be connected to the base stage of Darlington configuration, NPN manages Q 9Base stage and collector short circuit, resistance R 1The other end be connected to the emitter of Darlington configuration;
Described current feedback circuit is made up of three parts, promptly by PNP pipe Q 3, Q 4, Q 5Form the inferior current source of Weir; By resistance R 4, R 5With NPN pipe Q 6, Q 7, Q 8Form current comparison circuit; By resistance R 6, R 7With NPN pipe Q 12, Q 13Form the error current amplifying circuit; NPN manages Q 6, Q 7And resistance R 4Be serially connected on the branch road of the inferior current source of Weir, NPN manages Q 8Be serially connected on the other branch road of the inferior current source of Weir resistance R 5Be serially connected in NPN pipe Q 8Base stage on play metering function; NPN manages Q 12, Q 13Form and connect current amplification circuit, NPN manages Q 12Base stage be connected to NPN pipe Q 8Collector, resistance R 6Be serially connected in NPN pipe Q 12Emitter and Q 13Base stage between, resistance R 7Be attempted by NPN pipe Q 13Base stage and emitter between;
Described overheating protection circuit is by resistance R 8, R 9, R 10, R 11, NPN manages Q 14, Q 16, Q 18With PNP pipe Q 15, Q 17Form; The PNP pipe Q of base stage and collector short circuit 15Be connected NPN pipe Q 14Emitter and ground between, NPN manages Q 14Base stage and collector short circuit, resistance R 9An end and NPN pipe Q 14Collector be connected, NPN manages Q 16With PNP pipe Q 17Serial connection, resistance R 8 are attempted by NPN pipe Q 16With PNP pipe Q 17Base stage between, PNP manages Q 17Base stage and resistance R 9The other end connect resistance R 10Be connected PNP pipe Q 17Collector and NPN pipe Q 18Base stage between, resistance R 11Be attempted by NPN pipe Q 18Base stage and emitter between;
Described big current drives and current foldback circuit are by resistance R 15, R 19R 12, R 14, R 16And NPN pipe Q 19, Q 22, PNP manages Q 23, Q 24, Q 25, Q 26Form; PNP manages Q 23, Q 24, Q 25, Q 26Constitute Darlington configuration, resistance R 14Be connected NPN pipe Q 19The collector of base stage and Darlington configuration between, resistance R 12Be attempted by NPN pipe Q 19Base stage and emitter between, the base stage of Darlington configuration connects NPN pipe Q 22Collector, resistance R 16Be attempted by between the base stage and emitter of Darlington configuration resistance R 15Be connected NPN pipe Q 22Emitter and overheating protection circuit in NPN pipe Q 16Collector between, resistance R 19 is attempted by NPN pipe Q 22Emitter and ground between, NPN manages Q 19Collector and NPN pipe Q 22Base stage be connected;
Described supply voltage distributor circuit is by resistance R 17, R 18, PNP manages Q 20With Zener diode D 1Form; Resistance R 17With Zener diode D 1Form the stabilivolt mu balanced circuit, PNP manages Q 20And resistance R 18Form common-collector amplifier, the output of mu balanced circuit is D 1The negative pole of pipe connects PNP pipe Q 20Base stage;
Described output driving and reverse-connection protection circuit are by resistance R 13, D 2With NPN pipe Q 21Form; NPN manages Q 21And resistance R 13Form common-collector amplifier, diode D 2Be attempted by between power supply and the ground;
Resistance R in the described PTAT current generating circuit 2And R 3Terminal that is connected and the resistance R in the voltage lifting circuit 1An end connect, NPN manages Q 1Collector and current feedback circuit in NPN pipe Q 7Base stage connect, NPN manages Q 1, Q 2Base stage receive resistance R after being connected 5An end, resistance R 5The other end and current feedback circuit in NPN pipe Q 8Base stage connect;
NPN pipe Q in the described voltage lifting circuit 10Emitter and the NPN in current feedback circuit pipe Q 6Base stage connect, NPN manages Q 9Base stage and current feedback circuit in NPN pipe Q 5Collector connect, NPN manages Q 10, Q 11Collector and current feedback circuit in PNP pipe Q 3, Q 4Emitter and NPN pipe Q 12, Q 13Collector connect;
NPN pipe Q in the described current feedback circuit 13Collector and overheating protection circuit in NPN pipe Q 16, Q 18Collector connect;
NPN pipe Q in the described overheating protection circuit 16Collector and big current drives and current foldback circuit in resistance R 5An end connect, NPN manages Q 18Collector and output drive with reverse-connection protection circuit in NPN manage Q 21Base stage connect;
NPN pipe Q in described big current drives and the current foldback circuit 19Collector and supply voltage distributor circuit in PNP pipe Q 20Emitter connect, NPN manages Q 22Emitter and output drive with reverse-connection protection circuit in NPN manage Q 21Collector connect, PNP manages Q 26Emitter and the resistance R in the supply voltage distributor circuit 17An end, R 18An end connect;
Resistance R in the described supply voltage distributor circuit 17An end and R 18An end be connected to that output drives after being connected and reverse-connection protection circuit in diode D 2Negative pole.
Principle Analysis of the present invention is following:
Q 1, Q 2, R 0Form micro-current source, produce the PTAT electric current.Because R 3=3R 2, flow through R 1Electric current be 4I PTATQ 3, Q 4, Q 5Form the inferior current source of Weir, the two-way electric current is accurately mated, can improve the temperature stability of its electric current again.When circuit powered on, current source was to Q 9The diode injection current of forming makes Q 11The base stage of pipe has electric current, thereby makes Q 10And Q 1, Q 2Work; Q after circuit gets into stable state 9The diode of forming ends, and has realized that the startup of circuit is isolated.Voltage stabilizing diode D1, triode Q20, Q22 and resistance R 17, R18, R19 form a supply voltage distributor circuit.The voltage breakdown of voltage stabilizing diode D1 is 5.8V, works as V 0When value was lower than 5.8V, the branch road that R17 and D1 form broke off, and R17 is last not to have pressure drop, and PNP pipe Q20 ends, and makes that the A point voltage is a supply voltage, and passing through the one-level emitter follower again provides voltage to reference circuit from the emitter (B point) of Q22.Work as V 0When value was higher than 5.8V, the branch road that R17 and D1 form had electric current to pass through, and the last pressure drop of R17 is enough to make the conducting of Q20 pipe, and A point current potential is clamped at 5.8V+0.5815V, thereby makes B point current potential be clamped at 5.8V+0.5815V-0.7672V.Can the wide power voltage range of reference circuit 4.5V～40V be narrowed down in this very little scope of 4.5V～5.6143V like this, reduce the influence of mains voltage variations, improve the direct supply rejection characteristic of output reference voltage the output reference value.
Reference voltage is from the emitter output of Q21 pipe, and base stage (C point) current potential of Q21 pipe is about 3.2V, and the circuit that this value is made up of micro-current source, resistance R 1 and triode Q10, Q11 determines.Resistance R 15Introducing, make that C point current potential can keep constant when B point potential change.
Q 6, Q 7, R 4Form an error amplifier, work as V RefDuring rising, Q 21Base potential raise Q 11And Q 10The base potential of pipe also and then raises, and flows through Q 10The electric current of pipe increases, and the electric current of increase passes through resistance R 1And R 3Make and flow into Q 7The electric current of pipe base stage increases (because Q 2Collector current confirm by micro-current source), the electric current of current mirror is increased.Because Q 8The base potential substantially constant, so the part that electric current increases all flows into Q basically 12And Q 13The Darlington transistor of forming, Darlington transistor amplifies error current, divides and walks to flow through Q 10The one part of current of pipe, thus output voltage is descended.
In like manner, when output voltage descends, through Q 6, Q 7, R 4The error amplifier and the Q that form 12, Q 13The Darlington transistor of forming makes output voltage raise, and reaches the purpose of regulated output voltage.
Resistance R 8, R 9, R 10, R 11And Q 14, Q 15, Q 16, Q 17, Q 18Pipe is formed overheating protection circuit, realizes efferent duct Q 21Overheating protection, shown in Fig. 1-2.VC among the figure terminates to Q 21The base stage of pipe.Temperature protection point in this circuit is located at 130 ℃.When chip temperature is lower than 130 ℃, resistance R 8On the pressure drop deficiency so that Q 16Pipe and Q 17Pipe is opened, and does not have current flowing resistance R 10And R 11, Q 18Pipe ends; When chip temperature is higher than 130 ℃, because the cut-in voltage of PN junction has negative temperature coefficient, Q at this moment 14And Q 15Two diode cut-in voltages that pipe is formed descend, and make resistance R 8On pressure drop raise, reach Q 16Pipe and Q 17The cut-in voltage of pipe, Q 16, Q 17, R 10And R 11The branch road of forming has electric current to flow through, resistance R 10And R 11Dividing potential drop makes Q 18The pipe conducting is with efferent duct Q 21The base current branch walk, reduced to flow through Q 21The electric current of pipe, thus junction temperature reduced, reach the purpose of overheating protection.Resistance R 15The supply voltage of overheating protection circuit part is stabilized in about 3.2V, so chip voltage V 0Variation little to the influence of overheating protection circuit, guaranteed that this partial circuit (can operate as normal in the 4.5V～40V) in the whole working power scope of reference source chip.
Resistance R 16For the overcurrent protection sample resistance, work as Q 22When the collector current of pipe reaches over-current protection point 130mA, resistance R 16On pressure drop make Q 23, Q 24, Q 25, Q 26The pipe conducting is to resistance R 12And R 14Injection current makes resistance R 12The voltage at two ends is enough to make Q 19The pipe conducting divides to walk Q 22The base current of pipe, thus its collector current reduced, reach the purpose of overcurrent protection.
If in use accidentally power end and ground are connect instead in addition, D2 will open, and prevent the device breakdown damage of inside circuit.
The present invention compared with prior art has the following advantages:
Precision is high, power range is wide (4.5～40V), strong (100 shakes～100mA), line-voltage regulation is low, temperature coefficient is little (10ppm/ ℃) and defencive function perfect (having overheating protection, overcurrent protection and reverse connecting protection) for driving force.
Description of drawings:
Fig. 1 is a structured flowchart of the present invention, promptly adopts the structural representation of modular form;
Fig. 2 is that electric elements of the present invention connect synoptic diagram.
Embodiment:
Embodiments of the invention: the present invention is made up of following module:
PTAT current generating circuit 1 is by resistance R 0, R 2, R 3With NPN pipe Q 1, Q 2Form.R 3Resistance be R 2Three times, the voltage at their two ends equates, so flow through R 2Electric current be to flow through R 3Three times, thereby the electric current that causes flowing through the Q2 pipe is to flow through Q 1Three times of pipe, the B-E of these two pipes knot cut-in voltage has Δ V BE=V TThe deviation of ln3, this voltage deviation falls in resistance R 0On, produced little electric current (PTAT electric current) (V TLn3)/R 0
Voltage lifting circuit 2, resistance R 1With NPN pipe Q 9, Q 10, Q 11The diode structure that pipe is formed constitutes.4 times of PTAT current flowing resistance R 1PTAT voltage is got a promotion, add two B-E junction voltages, guaranteed that efferent duct Q21 has sufficiently high current potential (about 3.2V).
When circuit powered on, the current source in the module four was to this diode injection current, thereby made Q in the module two 10And Q 11Pipe has electric current to inject Q 10The emitter current of pipe makes module one startup, and circuit gets into duty.After circuit gets into equilibrium state, Q 9The diode that pipe connects into breaks off, and reaches to start the purpose of isolating.
Current feedback circuit 3, this module is made up of three parts: PNP manages Q 3, Q 4, Q 5Form an inferior current source of Weir, the two-way electric current is accurately mated, improved the temperature stability of electric current again; Resistance R 4, R 5With NPN pipe Q 6, Q 7, Q 8Formed a current comparison circuit; Resistance R 6, R 7With NPN pipe Q 12, Q 13Formed the error current amplifying circuit.These three parts combine and have realized error amplification and current feedback function, have guaranteed that output voltage stabilization is at 2.5V.
Overheating protection circuit 4 is by resistance R 8, R 9, R 10, R 11, NPN manages Q 14, Q 16, Q 18With PNP pipe Q 15, Q 17Form.The electric current that flows through efferent duct is bigger, and its power consumption is also bigger.Yin Wendu is too high and damage in order to guarantee efferent duct, needs carry out overheating protection to it.When chip temperature reached certain value (130 ℃), ohmically pressure drop was enough to make Q 16Pipe and Q 17The pipe conducting has current flowing resistance R 11, R 11On pressure drop make Q 18Pipe is opened, and divides to walk efferent duct Q 21Base current, make and flow through Q 21The electric current of pipe reduces, and thermal value also and then descends, thereby plays the effect of overheating protection.
Big current drives and current foldback circuit 5 are by resistance R 15, R 19R 12, R 14, R 16And NPN pipe Q 19, Q 22, PNP manages Q 23, Q 24, Q 25, Q 26Form.If directly with Q in the supply voltage distributor circuit 6 20The emitter of pipe is exported to other module for power supply, when benchmark output terminal load current is big, will cause very big voltage deviation, makes the reference circuit function become very poor.So need add the one-level circuit, guarantee that reference voltage keeps stable when benchmark output terminal load current is big.
When flowing through Q 22The pipe the electric current overrate time, by resistance R 12, R 14, R 16, NPN manages Q 19With PNP pipe Q 23, Q 24, Q 25, Q 26The holding circuit of forming will be to Q 22The overcurrent of pipe is protected.Flowing through transistorized electric current crosses conference and because of the overheated transistor that causes expendable damage takes place.When flowing through Q 22When the electric current of pipe is excessive, resistance R 16On pressure drop make PNP pipe Q 23, Q 24, Q 25, Q 26Open, at this moment current flowing resistance R is arranged 12And R 14, resistance R 12On pressure drop make NPN pipe Q 19Open, divide to walk Q 22The base current of pipe has reduced the electric current that flows through it, reaches the effect of overcurrent protection.
Supply voltage distributor circuit 6 is by resistance R 17, R 18, PNP manages Q 20With Zener diode D 1Form.Because the power range broad of chip (4.5V～40V), if directly with external power supply to each module for power supply in the circuit, can not each functions of modules of better controlled stable, the voltage regulation factor of output reference voltage is also higher.When supply voltage is lower than 7V, Zener diode D 1End, do not have current flowing resistance R 17, PNP manages Q 20Also end Q 20The emitter voltage of pipe is supply voltage; When supply voltage is higher than 7V, Zener diode D 1Puncture, its voltage is stabilized in 5.8V, at this moment resistance R 17On pressure drop make Q 20The pipe conducting, playing emitter voltage is 5.8V+0.6V=6.4V, in the power range of 7V～40V, the voltage of this point is all basicly stable at 6.4V.
Output drives and reverse-connection protection circuit 7, by resistance R 13, D 2With NPN pipe Q 21Form R 15Effect be to absorb Q 22The variation of output voltage guarantees output Q 21Stablizing of pipe base voltage.The benchmark output terminal is from Q 21The emitter output of pipe has guaranteed that output reference has stronger driving force.
If in use accidentally power end and ground are met anti-D in addition 2To open, prevent that the device breakdown of inside circuit from damaging.

Claims (1)

1. high-precision low-drift integrated voltage reference source circuit, it is characterized in that: it comprises
PTAT current generating circuit (1) is used to produce the PTAT electric current;
Voltage lifting circuit (2) is used to promote PTAT voltage, has realized that the startup of circuit is isolated;
Current feedback circuit (3) is used for regulated output voltage, improves the temperature stability of its electric current;
Overheating protection circuit (4) is used for the overheating protection of efferent duct;
Big current drives and current foldback circuit (5), the output voltage of efferent duct when being used to adjust large load current; Be used for the transistorized overcurrent protection of big current driving circuit;
Supply voltage distributor circuit (6) is used to improve the direct supply rejection characteristic of output reference voltage;
Output drives and reverse-connection protection circuit (7), is used to strengthen the driving force and the circuit reverse connecting protection of output reference;
Described PTAT current generating circuit (1) is by resistance R 0, R 2, R 3With NPN pipe Q 1, Q 2Form; NPN manages Q 1, Q 2And resistance R 0Constitute micro-current source, resistance R 2An end be connected NPN pipe Q 2Collector on, resistance R 3An end be connected NPN pipe Q 1Collector on, resistance R 2, R 3The other end link together;
Described voltage lifting circuit (2) comprises resistance R 1With NPN pipe Q 9, Q 10, Q 11NPN manages Q 10And Q 11Constitute Darlington configuration, the base stage of this Darlington configuration and collector short circuit, NPN manages Q 9Emitter be connected to the base stage of Darlington configuration, NPN manages Q 9Base stage and collector short circuit, resistance R 1The other end be connected to the emitter of Darlington configuration;
Described current feedback circuit (3) is made up of three parts, promptly by PNP pipe Q 3, Q 4, Q 5Form the inferior current source of Weir; By resistance R 4, R 5With NPN pipe Q 6, Q 7, Q 8Form current comparison circuit; By resistance R 6, R 7With NPN pipe Q 12, Q 13Form the error current amplifying circuit; NPN manages Q 6, Q 7And resistance R 4Be serially connected on the branch road of the inferior current source of Weir, NPN manages Q 8Be serially connected on the other branch road of the inferior current source of Weir resistance R 5Be serially connected in NPN pipe Q 8Base stage on play metering function; NPN manages Q 12, Q 13Form and connect current amplification circuit, NPN manages Q 12Base stage be connected to NPN pipe Q 8Collector, resistance R 6Be serially connected in NPN pipe Q 12Emitter and Q 13Base stage between, resistance R 7Be attempted by NPN pipe Q 13Base stage and emitter between;
Described overheating protection circuit (4) is by resistance R 8, R 9, R 10, R 11, NPN manages Q 14, Q 16, Q 18With PNP pipe Q 15, Q 17Form; The PNP pipe Q of base stage and collector short circuit 15Be connected NPN pipe Q 14Emitter and ground between, NPN manages Q 14Base stage and collector short circuit, resistance R 9An end and NPN pipe Q 14Collector be connected, NPN manages Q 16With PNP pipe Q 17Serial connection, resistance R 8 are attempted by NPN pipe Q 16With PNP pipe Q 17Base stage between, PNP manages Q 17Base stage and resistance R 9The other end connect resistance R 10Be connected PNP pipe Q 17Collector and NPN pipe Q 18Base stage between, resistance R 11Be attempted by NPN pipe Q 18Base stage and emitter between;
Described big current drives and current foldback circuit (5) are by resistance R 15, R 19R 12, R 14, R 16And NPN pipe Q 19, Q 22, PNP manages Q 23, Q 24, Q 25, Q 26Form; PNP manages Q 23, Q 24, Q 25, Q 26Constitute Darlington configuration, resistance R 14Be connected NPN pipe Q 19The collector of base stage and Darlington configuration between, resistance R 12Be attempted by NPN pipe Q 19Base stage and emitter between, the base stage of Darlington configuration connects NPN pipe Q 22Collector, resistance R 16Be attempted by between the base stage and emitter of Darlington configuration resistance R 15Be connected NPN pipe Q 22Emitter and overheating protection circuit (4) in NPN pipe Q 16Collector between, resistance R 19 is attempted by NPN pipe Q 22Emitter and ground between, NPN manages Q 19Collector and NPN pipe Q 22Base stage be connected;
Described supply voltage distributor circuit (6) is by resistance R 17, R 18, PNP manages Q 20With Zener diode D 1Form; Resistance R 17With Zener diode D 1Form the stabilivolt mu balanced circuit, PNP manages Q 20And resistance R 18Form common-collector amplifier, the output of mu balanced circuit is D 1The negative pole of pipe connects PNP pipe Q 20Base stage;
Described output driving and reverse-connection protection circuit (7) are by resistance R 13, D 2With NPN pipe Q 21Form; NPN manages Q 21And resistance R 13Form common-collector amplifier, diode D 2Be attempted by between power supply and the ground;
Resistance R in the described PTAT current generating circuit (1) 2And R 3Resistance R in terminal that is connected and the voltage lifting circuit (2) 1An end connect, NPN manages Q 1Collector and current feedback circuit (3) in NPN pipe Q 7Base stage connect, NPN manages Q 1, Q 2Base stage receive resistance R after being connected 5An end, resistance R 5The other end and current feedback circuit (3) in NPN pipe Q 8Base stage connect;
NPN pipe Q in the described voltage lifting circuit (2) 10Emitter and the NPN in the current feedback circuit (3) pipe Q 6Base stage connect, NPN manages Q 9Base stage and current feedback circuit (3) in NPN pipe Q 5Collector connect, NPN manages Q 10, Q 11Collector and current feedback circuit (3) in PNP pipe Q 3, Q 4Emitter and NPN pipe Q 12, Q 13Collector connect;
NPN pipe Q in the described current feedback circuit (3) 13Collector and overheating protection circuit (4) in NPN pipe Q 16, Q 18Collector connect;
NPN pipe Q in the described overheating protection circuit (4) 16Collector and big current drives and current foldback circuit (5) in resistance R 5An end connect, NPN manages Q 18Collector and output drive with reverse-connection protection circuit (7) in NPN manage Q 21Base stage connect;
NPN pipe Q in described big current drives and the current foldback circuit (5) 19Collector and supply voltage distributor circuit (6) in PNP pipe Q 20Emitter connect, NPN manages Q 22Emitter and output drive with reverse-connection protection circuit (7) in NPN manage Q 21Collector connect, PNP manages Q 26Emitter and the resistance R in the supply voltage distributor circuit (6) 17An end, R 18An end connect;
Resistance R in the described supply voltage distributor circuit (6) 17An end and R 18An end be connected to output after being connected and drive and the middle diode D of reverse-connection protection circuit (7) 2Negative pole.
CN2009103095182A 2009-11-10 2009-11-10 high-precision low-drift integrated voltage reference source circuit Expired - Fee Related CN101697087B (en)

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