CN101660141B - 成膜装置及基板处理装置 - Google Patents

成膜装置及基板处理装置 Download PDF

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Publication number
CN101660141B
CN101660141B CN200910169416.5A CN200910169416A CN101660141B CN 101660141 B CN101660141 B CN 101660141B CN 200910169416 A CN200910169416 A CN 200910169416A CN 101660141 B CN101660141 B CN 101660141B
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gas
film deposition
gas flow
vacuum vessel
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Chinese (zh)
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CN101660141A (zh
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加藤寿
本间学
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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CN200910169416.5A 2008-08-29 2009-08-31 成膜装置及基板处理装置 Active CN101660141B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2008222747 2008-08-29
JP2008-222747 2008-08-29
JP2008222738A JP5195176B2 (ja) 2008-08-29 2008-08-29 成膜装置
JP2008222738 2008-08-29
JP2008222747A JP5262452B2 (ja) 2008-08-29 2008-08-29 成膜装置及び基板処理装置
JP2008-222738 2008-08-29

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CN101660141A CN101660141A (zh) 2010-03-03
CN101660141B true CN101660141B (zh) 2014-04-16

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CN (1) CN101660141B (cg-RX-API-DMAC10.html)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5195174B2 (ja) * 2008-08-29 2013-05-08 東京エレクトロン株式会社 成膜装置及び成膜方法
JP5195175B2 (ja) * 2008-08-29 2013-05-08 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
CN102269310A (zh) * 2010-06-03 2011-12-07 北京中电科电子装备有限公司 旋转接头
JP5579009B2 (ja) * 2010-09-29 2014-08-27 東京エレクトロン株式会社 成膜装置および成膜方法
JP5884500B2 (ja) * 2012-01-18 2016-03-15 東京エレクトロン株式会社 成膜装置
JP6383674B2 (ja) * 2014-02-19 2018-08-29 東京エレクトロン株式会社 基板処理装置
CN106282969B (zh) * 2015-06-02 2019-02-15 中微半导体设备(上海)有限公司 化学气相沉积装置及其沉积方法
JP6330941B1 (ja) * 2017-03-07 2018-05-30 株式会社Sumco エピタキシャル成長装置およびプリヒートリングならびにそれらを用いたエピタキシャルウェーハの製造方法
US11834743B2 (en) * 2018-09-14 2023-12-05 Applied Materials, Inc. Segmented showerhead for uniform delivery of multiple precursors
JP7884325B2 (ja) * 2020-05-08 2026-07-03 東京エレクトロン株式会社 成膜方法及び成膜装置
US12467144B2 (en) 2022-10-27 2025-11-11 Applied Materials, Inc. Methods of correlating zones of processing chambers, and related systems and methods
JP2026510180A (ja) * 2022-10-27 2026-04-02 アプライド マテリアルズ インコーポレイテッド 処理チャンバの各ゾーンを関連付ける方法、および関連するシステムと方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1584110A (zh) * 2003-08-06 2005-02-23 爱发科股份有限公司 薄膜制造装置以及制造方法
CN101010447A (zh) * 2004-10-15 2007-08-01 株式会社日立国际电气 基板处理装置及半导体装置的制造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004056170A1 (de) * 2004-08-06 2006-03-16 Aixtron Ag Vorrichtung und Verfahren zur chemischen Gasphasenabscheidung mit hohem Durchsatz
US20060073276A1 (en) * 2004-10-04 2006-04-06 Eric Antonissen Multi-zone atomic layer deposition apparatus and method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1584110A (zh) * 2003-08-06 2005-02-23 爱发科股份有限公司 薄膜制造装置以及制造方法
CN101010447A (zh) * 2004-10-15 2007-08-01 株式会社日立国际电气 基板处理装置及半导体装置的制造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特表2007-504357A 2007.03.01

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Publication number Publication date
JP5195176B2 (ja) 2013-05-08
JP2010056472A (ja) 2010-03-11
CN101660141A (zh) 2010-03-03

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