CN101654517A - 高分子半导体及制备方法 - Google Patents
高分子半导体及制备方法 Download PDFInfo
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- CN101654517A CN101654517A CN200910166516A CN200910166516A CN101654517A CN 101654517 A CN101654517 A CN 101654517A CN 200910166516 A CN200910166516 A CN 200910166516A CN 200910166516 A CN200910166516 A CN 200910166516A CN 101654517 A CN101654517 A CN 101654517A
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- semiconducting polymer
- heteroaryl
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- 229920000642 polymer Polymers 0.000 title claims abstract description 30
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- 125000001072 heteroaryl group Chemical group 0.000 claims description 23
- 125000000217 alkyl group Chemical group 0.000 claims description 22
- 125000003118 aryl group Chemical group 0.000 claims description 21
- 125000000547 substituted alkyl group Chemical group 0.000 claims description 18
- 125000003107 substituted aryl group Chemical group 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 17
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- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 2
- 235000017557 sodium bicarbonate Nutrition 0.000 description 2
- 125000001113 thiadiazolyl group Chemical group 0.000 description 2
- 125000000335 thiazolyl group Chemical group 0.000 description 2
- 125000001544 thienyl group Chemical group 0.000 description 2
- 125000004306 triazinyl group Chemical group 0.000 description 2
- 125000001425 triazolyl group Chemical group 0.000 description 2
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/12—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
- H01B1/124—Intrinsically conductive polymers
- H01B1/128—Intrinsically conductive polymers comprising six-membered aromatic rings in the main chain, e.g. polyanilines, polyphenylenes
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
- C08G61/10—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aromatic carbon atoms, e.g. polyphenylenes
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/12—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
- H01B1/124—Intrinsically conductive polymers
- H01B1/125—Intrinsically conductive polymers comprising aliphatic main chains, e.g. polyactylenes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/12—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
- H01B1/124—Intrinsically conductive polymers
- H01B1/127—Intrinsically conductive polymers comprising five-membered aromatic rings in the main chain, e.g. polypyrroles, polythiophenes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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Abstract
一种高分子半导体，选自式(I)和(II)，式(I)(II)其中X、Y、a、b、n、R1和R2如本文所定义。
Description
技术领域
本发明在多个实施方案中涉及适于在电子装置例如薄膜晶体管(“TFT”)中使用的组合物和方法。本发明还涉及使用所述组合物和方法制成的构件或层，以及含有所述材料的电子装置。
背景技术
薄膜晶体管(TFT)是现代电子设备包括例如传感器、图像扫描器和电子显示装置的基本构件。使用当前主流硅技术的TFT电路对于某些应用来说可能太昂贵，特别是对于高切换速度并非必需的大面积的电子装置，例如显示器的底板开关电路(例如活性基质液晶监视器或电视机)。基于硅的TFT电路的高成本主要是由于使用了资金密集型硅生产设备，以及需要严格控制的复杂的高温、高真空光刻制造方法。通常希望制备不仅具有低得多的生产成本而且具有吸引人的机械性能例如结构紧凑、重量轻并且柔韧的TFT。有机薄膜晶体管(OTFT)可适于那些不需要高切换速度或高密度的应用。
TFT通常由一个支承基底、三个电传导电极(栅极、源极和漏极)、一个沟道半导体层和一个将栅极与半导体层分开的电绝缘栅介电层组成。
改进已知TFT的性能让人期待。可通过至少三个特性来测量性能：迁移率、开关电流比以及阈值电压。迁移率以cm2/V·s为单位测量；较高的迁移率是合乎需要的。较高的开关电流比也是合乎需要的。阈值电压与为使电流流动而需要施加于栅极的偏压有关。通常，希望阈值电压尽可能地接近于零(0)。
发明内容
本发明在多个实施方案中涉及适于在薄膜晶体管的半导体层中使用的高分子半导体。
所述高分子半导体选自式(I)和(II)：
式(I) 式(II)
其中
R1和R2独立地选自氢、烷基、被取代的烷基、芳基、被取代的芳基和杂芳基；
X和Y独立地为共轭的二价部分；
a和b独立地为0至约10的整数；并且
n为2至约5,000的整数。
X和Y可独立地含有一个选自以下的部分：
及其结合，其中R3独立地选自氢、烷基、被取代的烷基、芳基、被取代的芳基和杂芳基。
所述高分子半导体可选自式(I-a)至(I-h)：
式(I-a) 式(I-b)
式(I-c) 式(I-d)
式(I-e) 式(I-f)
式(I-g) 式(I-h)
其中R1和R3独立地选自烷基、被取代的烷基、芳基、被取代的芳基和杂芳基。
所述高分子半导体可选自式(II-a)至(II-v)之一：
式(II-a) 式(II-b)
式(II-c) 式(II-d)
式(II-e) 式(II-f)
式(II-g) 式(II-h)
式(II-i) 式(II-j)
式(II-k) 式(II-l)
式(II-m) 式(II-n)
式(II-o) 式(II-p)
式(II-q) 式(II-r)
式(II-s) 式(II-t)
式(II-u) 式(II-v)
其中R1、R2和R3独立地选自烷基、被取代的烷基、芳基、被取代的芳基和杂芳基。在具体的实施方案中，R1、R2和R3独立地为C1-C20烷基。
所述杂芳基可选自噻吩基、呋喃基、吡啶基、噁唑基、吡咯基、三嗪基、咪唑基、嘧啶基、吡嗪基、噁二唑基、吡唑基、三唑基、噻唑基、噻二唑基、喹啉基、喹唑啉基、1，5-二氮杂萘基和咔唑基，并且所述杂芳基可被烷基、芳基、具有0至约36个碳原子的含杂原子的基团，或卤素取代。
在另一些实施方案中，所述高分子半导体具有式(I)或(II)：
式(I) 式(II)
其中
R1和R2独立地选自氢、烷基、被取代的烷基、芳基、被取代的芳基和杂芳基；
每一个X和Y部分独立地选自
其中R3独立地选自氢、烷基、被取代的烷基、芳基、被取代的芳基和杂芳基；
a和b独立地为0至约10的整数；并且
n为2至约5,000的整数。
实施方案中还公开了一种制备下式高分子半导体的方法：
式(II-j)
其中R3独立地选自烷基、被取代的烷基、芳基、被取代的芳基和杂芳基；所述方法包括：
合成5，5’-二甲酰基-4，4’-二(R3)硫基-2，2’-二噻吩；和
将5，5’-二甲酰基-4，4’-二(R3)硫基-2，2’-二噻吩与肼聚合从而形成聚合物II-j。
在另外的实施方案中还包括通过本方法制得的半导体层和/或薄膜晶体管。所述晶体管可具有0.01cm2/V·s或更大的迁移率和/或104或更大的开关电流比。
本发明的示例性实施方案的这些及其他非限制性特征在下文进行更具体的描述。
附图说明
以下是对附图的简要说明，所述附图的给出是为了说明本发明公开的示例性实施方案，而不是为了对其进行限制。
图1为本发明的TFT的第一个示例性实施方案。
图2为本发明的TFT的第二个示例性实施方案。
图3为本发明的TFT的第三个示例性实施方案。
图4为本发明的TFT的第四个示例性实施方案。
具体实施方式
参照附图可更全面地理解本发明公开的构件、方法和装置。所述附图仅为方便和易于说明本发明的示意图，因此，并不意在指明本发明的装置或构件的相对大小和尺寸和/或限定或限制示例性实施方案的范围。
虽然在以下描述中为清楚起见而使用了特定术语，但是这些术语仅意在指代选择用来在附图中示出的实施方案的具体结构，并不意在限定或限制本发明的范围。在以下的附图和下文描述中，应理解的是，相同的附图标记指代相同功能的构件。
本发明涉及式(I)或(II)的高分子半导体，其在下文进一步描述。所述高分子半导体特别适于在薄膜晶体管或有机薄膜晶体管(OTFT)的半导体层中使用。所述晶体管可具有多种不同的构型。
图1说明了第一个OTFT实施方案或构型。所述OTFT 10含有一个与栅极30和介电层40相接触的基底20。虽然此处将栅极30描绘为处于基底20内，但这并不是必需的。而介电层40将栅极30与源极50、漏极60和半导体层70分开则是较重要的。源极50接触半导体层70。漏极60也接触半导体层70。半导体层70蔓延在源极50和漏极60之上和之间。任选的界面层80位于介电层40和半导体层70之间。
图2说明了第二个OTFT实施方案或构型。OTFT 10含有一个与栅极30和介电层40接触的基底20。半导体层70配置于介电层40的上部或顶部并将介电层40与源极50和漏极60分开。任选的界面层80位于介电层40和半导体层70之间。
图3说明了第三个OTFT实施方案或构型。OTFT 10含有一个还用作栅极并与介电层40接触的基底20。半导体层70配置于介电层40的上部或顶部并将介电层40与源极50和漏极60分开。任选的界面层80位于介电层40和半导体层70之间。
图4说明了第四个OTFT实施方案或构型。OTFT 10含有一个与源极50、漏极60和半导体层70相接触的基底20。半导体层70蔓延在源极50和漏极60之上和之间。介电层40在半导体层70的顶部。栅极30在介电层40的顶部并且不接触半导体层70。任选的界面层80位于介电层40和半导体层70之间。
所述高分子半导体选自式(I)和(II)：
式(I) 式(II)
其中
R1和R2独立地选自氢、烷基、被取代的烷基、芳基、被取代的芳基和杂芳基；
X和Y独立地为共轭的二价部分；
a和b独立地为0至约10的整数；并且
n为2至约5,000的整数。
通常，所述烷基含有1至约20个碳原子，并且所述芳基含有约2至约20个碳原子。在一些实施方案中，对于式(I)，a＞0，或者对于式(II)，(a+b)＞0。在另一些实施方案中，a为1至6。在式(II)的特定实施方案中，a为0。在式(II)的另一些实施方案中，a为0或1；并且b为1至6。在一些实施方案中，R1和R2均为氢，而在另一些实施方案中，R1和R2独立地为C1-C20烷基。
每一个X和Y部分可选自：
及其结合，其中R3独立地选自氢、烷基、被取代的烷基、芳基、被取代的芳基和杂芳基。在特定的实施方案中，R3为烷基，例如C1-C20烷基。应注意的是，X和Y仅表示一个部分的存在，而a和b表示部分的数目。换言之，X和Y部分可以相互不同，如下文所见。此外，当a例如大于1时，X部分本身可以不同。
在另一些实施方案中，X和Y为以下中的任何一个：
在实施方案中，所述高分子半导体可选自式(I-a)至(I-h)：
式(I-a) 式(I-b)
式(I-c) 式(I-d)
式(I-e) 式(I-f)
式(I-g) 式(I-h)
其中R1和R3独立地选自烷基、被取代的烷基、芳基、被取代的芳基和杂芳基。R1和R3可独立地选自C1-C20烷基。
参照X和Y的含义，在式(I-e)中，a＝2。两个X部分相同(带有一个侧链的噻吩)，但是R3侧链在一个噻吩上位于3位碳上，而在另一个噻吩上位于4位碳上。在式(I-f)中，a＝4。两个X部分为未被取代的噻吩，并且另两个X部分为具有一个侧链的噻吩。同样，R3侧链在一个噻吩上位于3位碳上，而在另一个噻吩上位于4位碳上。
在另一些实施方案中，所述高分子半导体选自式(II-a)至(II-v)之一：
式(II-a) 式(II-b)
式(II-c) 式(II-d)
式(II-e) 式(II-f)
式(II-g) 式(II-h)
式(II-i) 式(II-j)
式(II-k) 式(II-l)
式(II-m) 式(II-n)
式(II-o) 式(II-p)
式(II-q) 式(II-r)
式(II-s) 式(II-t)
式(II-u) 式(II-v)
其中R1、R2和R3独立地选自烷基、被取代的烷基、芳基、被取代的芳基和杂芳基。在特定的实施方案中，R1、R2和R3可独立地选自C1-C20烷基。所希望的是，高分子半导体具有式(II-j)。
当式(I)和(II)的R1、R2或R3为杂芳基时，该杂芳基可选自噻吩基、呋喃基、吡啶基、噁唑基、吡咯基、三嗪基、咪唑基、嘧啶基、吡嗪基、噁二唑基、吡唑基、三唑基、噻唑基、噻二唑基、喹啉基、喹唑啉基、1，5-二氮杂萘基和咔唑基。所述杂芳基可被烷基、芳基、具有0至约36个碳原子的含杂原子的基团，或卤素取代。
在式(I)或(II)的一些实施方案中，每一个X和Y部分独立地选自
其中R3独立地选自氢、烷基、被取代的烷基、芳基、被取代的芳基和杂芳基。这些实施方案也涵盖式(I-a)至(I-h)和式(II-a)至式(II-v)。
式(I)或(II)的高分子半导体可通过任何适宜的合成方法形成。例如，可将甲酰基或羰基与氨基反应形成聚合物(I)和(II)，如方案1中所示。
方案1.聚合物(I)和(II)的示例性合成。
其中
R1和R2独立地选自氢、烷基、被取代的烷基、芳基、被取代的芳基和杂芳基；
X和Y独立地为共轭的二价部分；
a和b独立地为0至约10的整数；并且
n为2至约5,000的整数。
如果需要，半导体层还可含有另一种有机半导体材料。其他有机半导体材料的实例包括但不限于并苯，例如蒽、并四苯、并五苯、及它们被取代的衍生物、苝、富勒烯(fullerene)、低聚噻吩；其他高分子半导体例如三芳基胺聚合物、聚吲哚咔唑、聚咔唑、聚并苯、聚芴、聚噻吩，及其被取代的衍生物；酞菁例如铜酞菁或锌酞菁，及其被取代的衍生物。
半导体层约5nm至约1000nm厚，尤其为约10nm至约100nm厚。半导体层可通过任何合适的方法形成。但是，半导体层通常由液体组合物例如分散液或溶液形成，然后将其沉积于晶体管的基底上。示例性沉积方法包括液相沉积例如旋涂、浸涂、刮涂、棒涂、筛网印刷、冲压、喷墨印刷等，及本领域已知的其他常规方法。
所述基底可由包括但不限于硅、玻璃板、塑料膜或薄片的材料组成。对于结构柔韧的装置，可使用塑料基底，例如聚酯、聚碳酸酯、聚酰亚胺薄片等。基底的厚度可为约10微米至超过10毫米，示例性厚度为约50微米至约5毫米——尤其对于柔韧的塑料基底，对于硬质基底例如玻璃或硅，厚度为约0.5至约10毫米。
栅极由电传导材料组成。其可为金属薄膜、传导聚合物膜、由传导油墨或糊剂制成的传导膜，或基底本身，例如重度掺杂的硅。栅极材料的实例包括但不限于铝、金、银、铬、铟锡氧化物、传导聚合物例如聚苯乙烯磺酸盐掺杂的聚(3，4-亚乙二氧噻吩)(PSS-PEDOT)、以及由炭黑/石墨或银胶体组成的传导油墨/糊剂。栅极可通过真空蒸发、溅射金属或传导性金属氧化物、常规平版印刷及刻蚀、化学气相沉积、旋涂、浇铸或印制、或其他沉积方法而制备。栅极的厚度，对于金属膜在约10至约500纳米的范围内，对于传导聚合物在约0.5至约10微米的范围内。
所述介电层通常可为无机材料膜、有机聚合物膜、或有机-无机复合膜。适于作为介电层的无机材料的实例包括氧化硅、氮化硅、氧化铝、钛酸钡、钡锆钛酸盐等。适宜的有机聚合物的实例包括聚酯、聚碳酸酯、聚乙烯基苯酚、聚酰亚胺、聚苯乙烯、聚甲基丙烯酸酯、聚丙烯酸酯、环氧树脂等。介电层的厚度取决于所用材料的介电常数，并且可为例如约10nm至约500nm。介电层可具有例如小于约10-12西门子每厘米(S/cm)的电导率。介电层使用本领域已知的常规方法形成，所述方法包括在形成栅极中所述的那些方法。
如果需要，可在介电层和半导体层之间设置一个界面层。当有机薄膜晶体管中的电荷传输发生在所述两层的界面处时，所述界面层可能会影响TFT的性能。示例性界面层可由硅烷形成，例如2008年4月11日提交的序列号为No.12/101,942的美国专利申请中所述。
适于用作源极和漏极的典型材料包括用作栅极材料的那些，例如金、银、镍、铝、铂、传导聚合物和传导油墨。在具体的实施方案中，电极材料提供较低的对半导体的接触电阻。典型的厚度为例如约40纳米至约1微米，更具体的厚度为约100至约400纳米。本发明的OTFT装置含有半导体沟道。该半导体沟道的宽度可为例如约5微米至约5毫米，具体的沟道宽度为约100微米至约1毫米。半导体沟道长度可为例如约1微米至约1毫米，更具体的沟道长度为约5微米至约100微米。
当向栅极施加例如约+10伏至约-80伏的电压时，可将源极接地并向漏极施加例如约0伏至约80伏的偏压以收集穿过半导体沟道传输的载流子。所述电极可使用本领域已知的常规方法来形成或沉积。
如果需要，也可在TFT的顶部沉积一个屏障层来保护其免受环境条件例如光、氧和湿气等的影响，这些可降低其电性能。所述屏障层为本领域已知并且可仅由聚合物构成。
OTFT的各个构件可以任意顺序沉积于基底上，如图中所见。术语“基底上”不应理解为要求每一个构件直接接触基底。该术语应被理解为描述构件相对于基底的位置。但是，通常地，栅极和半导体层两者均应与介电层接触。此外，源极和漏极两者均应与半导体层接触。通过本发明方法形成的高分子半导体可沉积于有机薄膜晶体管的任何合适的构件上从而形成该晶体管的半导体层。
所得晶体管在实施方案中可具有0.001cm2/V·s或更大的迁移率。在一些实施方案中，迁移率为0.01cm2/V·s或更大。
以下实施例说明了根据本发明方法制得的OTFT。所述实施例仅为示例性的，并不意在将本发明限制于本文所述的材料、条件或过程参数。除非另外指出，所有份数均为重量百分比。
实施例
聚(1，2-二((3-十二烷基-5-甲基噻吩-2-基)亚甲基)肼)
式(II-j)的聚(1，2-二((3-十二烷基-5-甲基噻吩-2-基)亚甲基)肼)的合成概述于方案2中。
方案2.
5，5’-二甲酰基-4，4’-双十二烷硫基-2，2’-二噻吩2的合成
在氩气氛下，将正丁基锂的己烷溶液(18.65mmol，7.46mL，2.5M)在10分钟内添加到N，N，N’N’-四甲基乙二胺(TMEDA)(18.65mmol)和固体3，4’-双十二烷基噻吩1(9.33mmol)的干燥己烷(100mL)的混合物中。固体溶解变为黄色透明溶液，然后形成淡黄色沉淀物。再添加40mL己烷。将该混合物回流搅拌30分钟，然后冷却至-78℃。在氩气氛下5分钟内逐滴添加过量的干燥N，N-二甲基甲酰胺(DMF)(32mmol)。混合物立即变为黄色。放置该反应混合物至达到室温(过夜)并在剧烈搅拌且保持在0℃以下的情况下将所得溶液倒入3.7％HCl水溶液(400mL)中。用碳酸氢钠中和后，将有机层用乙醚萃取几次并用硫酸钠干燥。首先使用异丙醇然后使用庚烷使固体结晶。
产率：4.35g(83.5％)
II-j的合成
将肼(52.67mg，1.052mmol)和5，5’-二甲酰基-4，4’-双十二烷硫基-2，2’-二噻吩2(0.5881g，1.052mmol)在乙醇(20mL)和氯仿(10mL)中混合。将该混合物回流加热24小时，然后冷却至室温并倒入甲醇(200mL)中。过滤后将固体在碳酸氢钠水溶液中搅拌，然后过滤。固体使用己烷通过Sohxlet萃取法萃取24小时进行纯化，然后用甲苯溶解。除去溶剂得到暗紫色金属薄片状的II-j。
产率：0.21g(36％)。
DSC：熔点：170℃；211℃。
GPC：Mw/Mn＝45066/21349＝2.11
OTFT的制造及表征
使用图3中示意说明的顶部接触式薄膜晶体管构型作为试验装置的结构。试验装置构建在其上具有约200纳米厚的热生长氧化硅层的n-掺杂硅晶片上，并且用电容表测得具有约15nF/cm2(纳法/平方厘米)的电容。该硅晶片起栅极的作用而氧化硅层起栅电介质的作用。硅晶片首先用异丙醇、氩等离子体、异丙醇清洗，空气干燥，然后将其浸在60℃的0.1M辛基三氯硅烷(OTS-8)的甲苯溶液中达20min。随后，用甲苯、异丙醇洗涤晶片，并用空气干燥。聚合物(Ii-j)的二氯苯溶液(0.5重量％)首先通过1.0微米的针头式过滤器过滤，然后将其在室温下以1000rpm在经OTS-8处理的硅晶片上旋涂120秒。在该硅晶片上形成厚度为20-50纳米的半导体层，然后将该半导体层在80℃的真空烘箱中干燥5-10小时。其后，借助具有多种沟道长度和宽度的阴罩通过真空沉积在该半导体层的顶部沉积约50纳米厚度的金源极和漏极，从而产生一系列多种尺度的晶体管。在评侧之前将装置在140℃退火10-15分钟。
晶体管性能的评测在环境条件下使用Keithley 4200 SCS半导体表征体系在黑箱(即排除了环境光的封闭箱)中完成。载流子迁移率μ由饱和区域(栅电压，VG＜源-漏电压，VSD)的数据根据方程式(1)进行计算
ISD＝Ciμ(W/2L)(VG-VT)2 (1)
其中ISD是饱和区域的漏电流，W和L分别为半导体沟道的宽度和长度，Ci为每单位面积栅介电层的电容，VG和VT分别为栅电压和阈值电压。装置的VT由饱和区域ISD的平方根和装置的VG之间的关联式通过将所测数据外推至ISD＝0来确定。
装置的迁移和输出特性表明，化合物为p型半导体。使用尺寸为W＝5,000μm且L＝90μm的晶体管，由至少五个晶体管得到以下性能平均值：
迁移率：0.03cm2/V·s
开关电流比：106。
完全在环境条件下对OTFT装置进行制造和测量，表明该类型聚合物具有优良的空气稳定性。
虽然对具体实施方案进行了描述，但是申请人或本领域其他技术人员，仍可想到目前无法预料或可能无法预料的替代、修改、改变、改进及基本等同的方案。因此，所提交的(也可能会作修改)权利要求书意在包括所有这些替代、修改、改变、改进及基本等同的方案。
Claims (10)
1.一种选自式(I)和(II)的高分子半导体：
式(I) 式(II)
其中
R1和R2独立地选自氢、烷基、被取代的烷基、芳基、被取代的芳基和杂芳基；
X和Y独立地为共轭的二价部分；
a和b独立地为0至约10的整数；并且
n为2至约5,000的整数。
2.权利要求1的高分子半导体，其中所述高分子半导体选自式(I-a)至(I-h)：
式(I-a) 式(I-b)
式(I-c) 式(I-d)
式(I-e) 式(I-f)
式(I-g) 式(I-h)
其中R1和R3独立地选自烷基、被取代的烷基、芳基、被取代的芳基和杂芳基。
3.权利要求2的高分子半导体，其中所述高分子半导体具有式(I-b)。
4.一种选自式(I)和(II)的高分子半导体：
式(I) 式(II)
其中
R1和R2独立地选自氢、烷基、被取代的烷基、芳基、被取代的芳基和杂芳基；
每一个X和Y部分独立地选自
其中R3独立地选自氢、烷基、被取代的烷基、芳基、被取代的芳基和杂芳基；
a和b独立地为0至约10的整数；并且
n为2至约5,000的整数。
5.权利要求4的高分子半导体，其中a为1至6。
6.权利要求4的高分子半导体，选自式(II)，其中a为0或1；并且b为1至6。
7.权利要求4的高分子半导体，其中R1和R2为氢。
8.权利要求4的高分子半导体，其中R1和R2独立地为C1-C20烷基。
9.权利要求4的高分子半导体，其中R3为C1-C20烷基。
10.一种制备下式的高分子半导体的方法：
式(II-j)
其中R3独立地选自烷基、被取代的烷基、芳基、被取代的芳基和杂芳基；所述方法包括：
合成5，5’-二甲酰基-4，4’-二(R3)硫基-2，2’-二噻吩；和
将5，5’-二甲酰基-4，4’-二(R3)硫基-2，2’-二噻吩与肼聚合从而形成聚合物II-j。
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| WO2004003044A2 (en) * | 2002-06-28 | 2004-01-08 | Jean-Marie Lehn | Dynamers: polymeric materials exhibiting reversible formation and component exchange |
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| CN102260371B (zh) * | 2010-05-27 | 2013-04-24 | 海洋王照明科技股份有限公司 | 一种有机共聚物、其制备方法和应用 |
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