CN101652753A - 用于非易失性存储器的引导部署 - Google Patents
用于非易失性存储器的引导部署 Download PDFInfo
- Publication number
- CN101652753A CN101652753A CN200880004767A CN200880004767A CN101652753A CN 101652753 A CN101652753 A CN 101652753A CN 200880004767 A CN200880004767 A CN 200880004767A CN 200880004767 A CN200880004767 A CN 200880004767A CN 101652753 A CN101652753 A CN 101652753A
- Authority
- CN
- China
- Prior art keywords
- memory
- module
- beginning
- lpage
- precalculated position
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
- G11C29/24—Accessing extra cells, e.g. dummy cells or redundant cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C2029/0409—Online test
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C2029/0411—Online error correction
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C2029/5002—Characteristic
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Quality & Reliability (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (41)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US88944107P | 2007-02-12 | 2007-02-12 | |
US60/889,441 | 2007-02-12 | ||
US12/029,134 | 2008-02-11 | ||
US12/029,134 US8316206B2 (en) | 2007-02-12 | 2008-02-11 | Pilot placement for non-volatile memory |
PCT/US2008/001882 WO2008100529A2 (en) | 2007-02-12 | 2008-02-12 | Pilot placement for non-volatile memory |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101652753A true CN101652753A (zh) | 2010-02-17 |
CN101652753B CN101652753B (zh) | 2013-06-05 |
Family
ID=39686854
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008800047674A Expired - Fee Related CN101652753B (zh) | 2007-02-12 | 2008-02-12 | 用于非易失性存储器的引导部署 |
Country Status (4)
Country | Link |
---|---|
US (3) | US8316206B2 (zh) |
CN (1) | CN101652753B (zh) |
TW (1) | TWI473109B (zh) |
WO (1) | WO2008100529A2 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105027090A (zh) * | 2012-10-05 | 2015-11-04 | 西部数据技术公司 | 用于固态驱动器中的物理到逻辑映射的方法、设备和系统 |
WO2024007841A1 (zh) * | 2022-07-04 | 2024-01-11 | 苏州元脑智能科技有限公司 | 一种视频压缩系统、方法、设备、非易失性可读存储介质、芯片及服务器 |
TWI831379B (zh) * | 2022-06-14 | 2024-02-01 | 瑞昱半導體股份有限公司 | 開機資料讀取系統、方法以及處理電路 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2083541A3 (en) * | 2008-01-28 | 2013-07-10 | Core Logic, Inc. | Apparatus and method for estimating the channel in orthogonal frequency division multiplexing communication systems |
US20090259806A1 (en) * | 2008-04-15 | 2009-10-15 | Adtron, Inc. | Flash management using bad page tracking and high defect flash memory |
US8566505B2 (en) * | 2008-04-15 | 2013-10-22 | SMART Storage Systems, Inc. | Flash management using sequential techniques |
US8180954B2 (en) * | 2008-04-15 | 2012-05-15 | SMART Storage Systems, Inc. | Flash management using logical page size |
US8185778B2 (en) * | 2008-04-15 | 2012-05-22 | SMART Storage Systems, Inc. | Flash management using separate metadata storage |
US8028123B2 (en) * | 2008-04-15 | 2011-09-27 | SMART Modular Technologies (AZ) , Inc. | Circular wear leveling |
US9159422B1 (en) * | 2011-04-12 | 2015-10-13 | Sk Hynix Memory Solutions Inc. | Cross page management to avoid NAND physical page size limitation |
US8976609B1 (en) | 2014-06-16 | 2015-03-10 | Sandisk Enterprise Ip Llc | Low-test memory stack for non-volatile storage |
US9613715B2 (en) | 2014-06-16 | 2017-04-04 | Sandisk Technologies Llc | Low-test memory stack for non-volatile storage |
US9653184B2 (en) | 2014-06-16 | 2017-05-16 | Sandisk Technologies Llc | Non-volatile memory module with physical-to-physical address remapping |
GB201701747D0 (en) * | 2017-02-02 | 2017-03-22 | Blancco Tech Group Ip Oy | Intelligent verification of cryptographic erase and other firmware erasure processes |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05225693A (ja) * | 1992-02-14 | 1993-09-03 | Sony Corp | ディジタル信号処理回路 |
CN1180429A (zh) * | 1995-04-04 | 1998-04-29 | 记忆体公共有限公司 | 存储器管理 |
US5956743A (en) * | 1997-08-25 | 1999-09-21 | Bit Microsystems, Inc. | Transparent management at host interface of flash-memory overhead-bytes using flash-specific DMA having programmable processor-interrupt of high-level operations |
US6279133B1 (en) * | 1997-12-31 | 2001-08-21 | Kawasaki Steel Corporation | Method and apparatus for significantly improving the reliability of multilevel memory architecture |
US6487685B1 (en) * | 1999-09-30 | 2002-11-26 | Silicon Graphics, Inc. | System and method for minimizing error correction code bits in variable sized data formats |
US6564346B1 (en) * | 1999-12-07 | 2003-05-13 | Infineon Technologies Richmond, Lp. | Advanced bit fail map compression with fail signature analysis |
US6684289B1 (en) * | 2000-11-22 | 2004-01-27 | Sandisk Corporation | Techniques for operating non-volatile memory systems with data sectors having different sizes than the sizes of the pages and/or blocks of the memory |
US6694451B2 (en) * | 2000-12-07 | 2004-02-17 | Hewlett-Packard Development Company, L.P. | Method for redundant suspend to RAM |
US6683817B2 (en) * | 2002-02-21 | 2004-01-27 | Qualcomm, Incorporated | Direct memory swapping between NAND flash and SRAM with error correction coding |
US20040153902A1 (en) * | 2003-01-21 | 2004-08-05 | Nexflash Technologies, Inc. | Serial flash integrated circuit having error detection and correction |
US7173852B2 (en) * | 2003-10-03 | 2007-02-06 | Sandisk Corporation | Corrected data storage and handling methods |
KR100634356B1 (ko) * | 2004-05-12 | 2006-10-16 | 삼성전자주식회사 | 메인 데이터를 안전하게 로딩하는 메모리 시스템 및 그것의 데이터 로딩 방법 |
US7340668B2 (en) * | 2004-06-25 | 2008-03-04 | Micron Technology, Inc. | Low power cost-effective ECC memory system and method |
JP4408783B2 (ja) | 2004-09-29 | 2010-02-03 | Necエレクトロニクス株式会社 | 復号装置及び復号方法 |
US7315916B2 (en) * | 2004-12-16 | 2008-01-01 | Sandisk Corporation | Scratch pad block |
US7366826B2 (en) * | 2004-12-16 | 2008-04-29 | Sandisk Corporation | Non-volatile memory and method with multi-stream update tracking |
TW200723709A (en) * | 2005-07-21 | 2007-06-16 | Wionics Research | Deinterleaver and dual-viterbi decoder architecture |
US7469368B2 (en) * | 2005-11-29 | 2008-12-23 | Broadcom Corporation | Method and system for a non-volatile memory with multiple bits error correction and detection for improving production yield |
US20070143567A1 (en) * | 2005-12-21 | 2007-06-21 | Gorobets Sergey A | Methods for data alignment in non-volatile memories with a directly mapped file storage system |
US20070143561A1 (en) * | 2005-12-21 | 2007-06-21 | Gorobets Sergey A | Methods for adaptive file data handling in non-volatile memories with a directly mapped file storage system |
US7844879B2 (en) * | 2006-01-20 | 2010-11-30 | Marvell World Trade Ltd. | Method and system for error correction in flash memory |
CN103208309B (zh) | 2006-05-12 | 2016-03-09 | 苹果公司 | 存储设备中的失真估计和消除 |
US20070300130A1 (en) * | 2006-05-17 | 2007-12-27 | Sandisk Corporation | Method of Error Correction Coding for Multiple-Sector Pages in Flash Memory Devices |
US7561482B2 (en) * | 2006-09-07 | 2009-07-14 | Sandisk Corporation | Defective block isolation in a non-volatile memory system |
-
2008
- 2008-02-11 US US12/029,134 patent/US8316206B2/en not_active Expired - Fee Related
- 2008-02-12 WO PCT/US2008/001882 patent/WO2008100529A2/en active Application Filing
- 2008-02-12 CN CN2008800047674A patent/CN101652753B/zh not_active Expired - Fee Related
- 2008-02-12 TW TW97104818A patent/TWI473109B/zh not_active IP Right Cessation
-
2012
- 2012-11-20 US US13/681,911 patent/US8732432B2/en active Active
-
2014
- 2014-05-16 US US14/279,829 patent/US9594630B2/en active Active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105027090A (zh) * | 2012-10-05 | 2015-11-04 | 西部数据技术公司 | 用于固态驱动器中的物理到逻辑映射的方法、设备和系统 |
CN105027090B (zh) * | 2012-10-05 | 2018-03-09 | 西部数据技术公司 | 用于固态驱动器中的物理到逻辑映射的方法、设备和系统 |
TWI831379B (zh) * | 2022-06-14 | 2024-02-01 | 瑞昱半導體股份有限公司 | 開機資料讀取系統、方法以及處理電路 |
WO2024007841A1 (zh) * | 2022-07-04 | 2024-01-11 | 苏州元脑智能科技有限公司 | 一种视频压缩系统、方法、设备、非易失性可读存储介质、芯片及服务器 |
Also Published As
Publication number | Publication date |
---|---|
US8316206B2 (en) | 2012-11-20 |
US20080195822A1 (en) | 2008-08-14 |
TW200842890A (en) | 2008-11-01 |
TWI473109B (zh) | 2015-02-11 |
US20140325179A1 (en) | 2014-10-30 |
US8732432B2 (en) | 2014-05-20 |
CN101652753B (zh) | 2013-06-05 |
US20130080729A1 (en) | 2013-03-28 |
WO2008100529A3 (en) | 2008-11-27 |
WO2008100529A2 (en) | 2008-08-21 |
US9594630B2 (en) | 2017-03-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101652753B (zh) | 用于非易失性存储器的引导部署 | |
CN101681298B (zh) | 存储器控制器 | |
US8874874B2 (en) | Method and storage drive for writing portions of blocks of data in respective arrays of memory cells of corresponding integrated circuits | |
KR101459520B1 (ko) | 기입 속도를 향상시킬 수 있는 데이터 저장 장치, 및 이를포함하는 데이터 저장 시스템 | |
US10990287B2 (en) | Data storage device capable of reducing latency for an unmap command, and operating method thereof | |
US20180239557A1 (en) | Nonvolatile memory device, data storage device including the same, and operating method of data storage device | |
US8154902B2 (en) | Bit line decoder architecture for NOR-type memory array | |
US8423819B2 (en) | Data storage device, controller, and data access method for a downgrade memory | |
CN104575598A (zh) | 电阻式存储器件、其操作方法以及具有该电阻式存储器件的系统 | |
KR20200073122A (ko) | 데이터 저장 장치 및 그것의 동작 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200428 Address after: Singapore City Patentee after: Marvell Asia Pte. Ltd. Address before: Ford street, Grand Cayman, Cayman Islands Patentee before: Kaiwei international Co. Effective date of registration: 20200428 Address after: Ford street, Grand Cayman, Cayman Islands Patentee after: Kaiwei international Co. Address before: Hamilton, Bermuda Patentee before: Marvell International Ltd. Effective date of registration: 20200428 Address after: Hamilton, Bermuda Patentee after: Marvell International Ltd. Address before: Babado J San Michael Patentee before: MARVELL WORLD TRADE Ltd. |
|
TR01 | Transfer of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130605 Termination date: 20220212 |
|
CF01 | Termination of patent right due to non-payment of annual fee |