CN101635280A - Window-type ball grid array packaging structure and manufacturing method thereof - Google Patents

Window-type ball grid array packaging structure and manufacturing method thereof Download PDF

Info

Publication number
CN101635280A
CN101635280A CN200810132061A CN200810132061A CN101635280A CN 101635280 A CN101635280 A CN 101635280A CN 200810132061 A CN200810132061 A CN 200810132061A CN 200810132061 A CN200810132061 A CN 200810132061A CN 101635280 A CN101635280 A CN 101635280A
Authority
CN
China
Prior art keywords
chip
sticking brilliant
depression
window
packaging structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN200810132061A
Other languages
Chinese (zh)
Other versions
CN101635280B (en
Inventor
陈锦弟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Powertech Technology Inc
Original Assignee
Powertech Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Powertech Technology Inc filed Critical Powertech Technology Inc
Priority to CN2008101320618A priority Critical patent/CN101635280B/en
Publication of CN101635280A publication Critical patent/CN101635280A/en
Application granted granted Critical
Publication of CN101635280B publication Critical patent/CN101635280B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657Stacked arrangements of devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061Disposition
    • H01L2224/0612Layout
    • H01L2224/0613Square or rectangular array
    • H01L2224/06134Square or rectangular array covering only portions of the surface to be connected
    • H01L2224/06136Covering only the central area of the surface to be connected, i.e. central arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3201Structure
    • H01L2224/32012Structure relative to the bonding area, e.g. bond pad
    • H01L2224/32014Structure relative to the bonding area, e.g. bond pad the layer connector being smaller than the bonding area, e.g. bond pad
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4824Connecting between the body and an opposite side of the item with respect to the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73215Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/0651Wire or wire-like electrical connections from device to substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06555Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H01L2225/06558Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking the devices having passive surfaces facing each other, i.e. in a back-to-back arrangement
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06555Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H01L2225/06565Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking the devices having the same size and there being no auxiliary carrier between the devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01015Phosphorus [P]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/0105Tin [Sn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01075Rhenium [Re]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Measurement Of Radiation (AREA)

Abstract

The invention discloses a window-type ball grid array packaging structure, which mainly comprises a base plate, a chip, an adhesive crystal material, two or more bonding wires for electrically connecting the chip and the base plate, an adhesive body for sealing the chip, and two or more external terminals arranged below the base plate, wherein the base plate is provided with an adhesive crystal pit on which the adhesive crystal material is formed and a slotted hole for passing through the bonding wires, and the chip is aligned to the adhesive crystal pit and is arranged on the base plate. The invention also discloses a method for manufacturing the window-type ball grid array packaging structure, and in a step of adhesive crystal diffusion, the adhesive crystal pit limits the expansion shape of the adhesive crystal material so that the adhesive crystal material is filled the gap between the lateral surface of the chip and the edge of the adhesive crystal pit. Thus, the packaging structure has reduced packaging thickness and can avoid the smashed layering of the lateral surface of the chip.

Description

Window-type ball grid array packaging structure and manufacture method thereof
Technical field
The present invention is particularly to a kind of window-type ball grid array packaging structure and manufacture method thereof relevant for a kind of semiconductor device.
Background technology
In the encapsulated type of numerous semiconductor devices, window-type ball grid array (WBGA, Window BallGrid Array) packaging structure is the slotted eye that the substrate in order to carries chips is offered perforation, so that bonding wire passes slotted eye, to electrically connect substrate and chip above it, and will be engaged to the below of substrate as the external terminal of soldered ball, so that window-type ball grid array packaging structure can externally electrically engage.In case on substrate, and in sticking brilliant intensification and course of exerting pressure, sticking brilliant material will have flowability and the glue that takes place to overflow to the sticking brilliant material of the liquid state of utilization or the thick attitude of glue with chip attach, spread and cover that then can cause to the weld pad of chip can't routing when gluing brilliant material again.So present window-type ball grid array packaging structure can only use sticking brilliant adhesive tape (Tape) to replace the sticking brilliant material of liquid state or the thick attitude of glue, avoiding producing excessive glue, but cost is higher.And, chip by sticking brilliant adhesive tape bonding zone only be chip active surface and for plane, be subjected to stress influence easily and produce layering or cracked problem, cause the reliability of traditional window-type ball grid array packaging structure and quality to be affected in chip sides.
See also shown in Figure 1ly, a kind of known window-type ball grid array packaging structure 100 mainly comprises substrate 110, chip 120, sticking brilliant adhesive tape 130, two or more bonding wire 140, adhesive body 150 and two or more external terminals 160.This substrate 110 has inner surface 111, outer surface 112 and runs through the slotted eye 114 of this inner surface 111 to this outer surface 112.This chip 120 has active surface 121 and two or more weld pads 124 on this active surface 121.Should paste this active surface 121 of these chips 120 and this inner surface 111 of this substrate 110 by sticking brilliant adhesive tape 130,, and behind sticking crystalline substance, be revealed in this slotted eye 114 so that this chip 120 is arranged on this substrate 110.Be formed with passivation layer 125 on this active surface 121 of this chip 120.These bonding wires 140 are by this slotted eye 114 and electrically connect these weld pads 124 to this substrate 110.This adhesive body 150 sealings this chip 120 and these bonding wires 140.These external terminals 160 are arranged at this outer surface 112 of this substrate 110.See also shown in the enlarged drawing of Fig. 1, be somebody's turn to do the passivation layer 125 (Passivation Layer) on this active surface 121 that glues only local this chip 120 of stickup of brilliant adhesive tape 130, so the thermal stress that produces causes being produced by the side of this chip 120 layering and the cracked problem of peeling off or cause chip sides of this passivation layer 125 easily in sealing process and thermal cycling test.
Summary of the invention
In view of this, main purpose of the present invention is to provide a kind of window-type ball grid array packaging structure and manufacture method thereof, can reduce the thickness of whole encapsulation, and can effectively solve conventional window shape of the mouth as one speaks ball grid array packaging structure and produce layering in chip sides, peel off or the cracked problem of chip sides.
The object of the invention to solve the technical problems realizes by the following technical solutions.According to disclosed a kind of window-type ball grid array packaging structure, mainly comprise substrate, first chip, sticking brilliant material, two or more first bonding wire, adhesive body and two or more external terminals; This substrate has inner surface, outer surface, is formed on the sticking brilliant depression and the slotted eye of this inner surface, and this slotted eye runs through this outer surface to gluing brilliant depression; This first chip is arranged on this inner surface of this substrate in alignment with this sticking brilliant depression, and this first chip has first active surface, first back side and two or more sides between this first active surface and this first back side; Be somebody's turn to do sticking brilliant material and be formed at interior this first active surface of this sticking brilliant depression with bonding this first chip, should sticking brilliant depression limit the shape that this glues brilliant material, so that should insert this side of this first chip and be somebody's turn to do the slit of gluing between the brilliant concave edges by sticking brilliant material, and local this side that covers to this first chip; This first bonding wire passes this slotted eye and electrically connects this first chip to this substrate; This adhesive body is formed on this inner surface of this substrate and fills up this slotted eye, to seal this first chip and these first bonding wires; This external terminal is arranged at this outer surface of this substrate.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
In aforesaid window-type ball grid array packaging structure, this first chip also can have the passivation layer that is covered in this first active surface, and this passivation layer is embedded into fully in this sticking brilliant depression, so that the peripheral lateral margin of this passivation layer is somebody's turn to do sticking brilliant material seal.
In aforesaid window-type ball grid array packaging structure, degree of depth of this sticking brilliant depression can be greater than the thickness summation of this sticking brilliant material and this passivation layer but less than the thickness of this first chip, so that this first chip part is embedded in this sticking brilliant depression.
In aforesaid window-type ball grid array packaging structure, edge of this sticking brilliant depression can be positioned at outside this first chip but be close to this side of this first chip.
In aforesaid window-type ball grid array packaging structure, this sticking brilliant material can more be diffused in this slotted eye.
In aforesaid window-type ball grid array packaging structure, this sticking brilliant material can more seal the end of this first bonding wire at this first chip.
In aforesaid window-type ball grid array packaging structure, this first chip can have two or more first weld pads that is formed at this first active surface, and it is in alignment with in this slotted eye, for the joint of this first bonding wire.
In aforesaid window-type ball grid array packaging structure, this substrate can have stepped breach, and it is formed on the side of this outer surface and this slotted eye.
In aforesaid window-type ball grid array packaging structure, this external terminal can comprise two or more soldered balls.
In aforesaid window-type ball grid array packaging structure, can comprise second chip in addition, it is arranged on first back side of this first chip and has two or more second weld pads in back-to-back storehouse mode.
In aforesaid window-type ball grid array packaging structure, can comprise two or more second bonding wire in addition, it electrically connects this second weld pad to this substrate.
In aforesaid window-type ball grid array packaging structure, this adhesive body can cover this first back side of this first chip.
The present invention also discloses the manufacture method of aforesaid window-type ball grid array packaging structure, key step comprises: at first, substrate is provided, this substrate has inner surface, outer surface, is formed on the sticking brilliant depression and the slotted eye of this inner surface, this slotted eye runs through this outer surface and caved in to gluing crystalline substance, and brilliant material is glued in formation in this sticking brilliant depression; Then, first chip is set, this first chip is aimed at this sticking brilliant depression and temporary this inner surface that is pasted on this substrate, wherein this first chip has first active surface, first back side and two or more sides between this first active surface and this first back side, wherein should glue this first active surface of this first chip of the temporary adhesion of brilliant material; Behind temporary sticking crystalline substance, routing forms two or more first bonding wire, and this first bonding wire passes this slotted eye and electrically connects this first chip to this substrate; Then, glue brilliant diffusing step, to apply pressure to this first chip, this sticking brilliant depression limits the shape of this sticking brilliant material, so that be somebody's turn to do this side of gluing brilliant diffuse and inserting this first chip and be somebody's turn to do the slit of gluing between the brilliant concave edges, and local covering is to this side of this first chip; Afterwards, the formation adhesive body is on this inner surface of this substrate and fill up this slotted eye, to seal this first chip and this first bonding wire; At last, two or more external terminals this outer surface in this substrate is set.
As can be seen from the above technical solutions, window-type ball grid array packaging structure of the present invention and manufacture method thereof have following advantage and effect:
One, utilize the substrate inner surface to be formed with sticking brilliant depression and the first chip part is embedded in this sticking brilliant depression, to reduce the thickness of whole encapsulation.
Two, fill up slot between this sticking brilliant depression and this first chip by sticking brilliant material, and the local side that covers to this first chip, nonplanar viscous crystal region territory is provided, glue brilliant intensity to strengthen.
Three,, alleviating the stress that this first chip is subjected to, avoiding the delamination of chip passivation layer, and can avoid the side of this first chip to produce cracked by the peripheral lateral margin of the passivation layer of this sticking this first chip of brilliant material seal.
Four, by the end of this sticking brilliant material seal first bonding wire, cause the problem of breasting the tape or breaking because of influenced by mould stream to prevent these first bonding wires at this first chip.
Five, utilize outer surface that the stepped breach of this substrate is lower than this substrate so that lower routing zone to be provided, can use the less bonding wire in line footpath to make routing and engage, to reduce the risk that bonding wire exposes.
Description of drawings
Fig. 1 is known window-type ball grid array packaging structure and the local schematic cross-section that amplifies thereof;
Fig. 2 is according to the window-type ball grid array packaging structure of the present invention's first specific embodiment and the local schematic cross-section that amplifies of feature thereof;
Fig. 3 is the main flow diagram according to the manufacturing process of this window-type ball grid array packaging structure of the present invention's first specific embodiment;
Fig. 4 A is the assembly schematic cross-section in the manufacturing process of this window-type ball grid array packaging structure according to the present invention's first specific embodiment;
Fig. 4 B is the assembly schematic cross-section in the manufacturing process of this window-type ball grid array packaging structure according to the present invention's first specific embodiment;
Fig. 4 C is the assembly schematic cross-section in the manufacturing process of this window-type ball grid array packaging structure according to the present invention's first specific embodiment;
Fig. 4 D is the assembly schematic cross-section in the manufacturing process of this window-type ball grid array packaging structure according to the present invention's first specific embodiment;
Fig. 4 E is the assembly schematic cross-section in the manufacturing process of this window-type ball grid array packaging structure according to the present invention's first specific embodiment;
Fig. 5 is the schematic cross-section according to the another kind of window-type ball grid array packaging structure of the present invention's second specific embodiment.
Description of reference numerals
Slit between the side of S first chip and the sticking brilliant concave edges
The degree of depth of the sticking brilliant depression of D
The thickness summation of sticking brilliant material of T and passivation layer
1 provides the step of substrate
The step of 2 temporary sticking crystalline substances
3 steps that electrically connect
The step of 4 sticking brilliant diffusions
5 form the step of adhesive body
6 are provided with the step of external terminal
100 window-type ball grid array packaging structures
110 substrates, 111 inner surfaces, 112 outer surfaces
114 slotted eyes
120 chips, 121 active surfaces, 124 weld pads
125 passivation layers, 130 sticking brilliant adhesive tape 140 bonding wires
150 adhesive bodies, 160 external terminals
200 window-type ball grid array packaging structures
210 substrates, 211 inner surfaces, 212 outer surfaces
213 sticking brilliant depression 213A edges
214 slotted eyes, 215 stepped breach
216 first connect finger 217 outer connection pad 218 welding resisting layers
220 first chips, 221 first active surfaces, 222 first back sides
223 sides, 224 first weld pads, 225 passivation layers
230 sticking brilliant material 240 first bonding wires 250 adhesive bodies
260 external terminals
300 window-type ball grid array packaging structures
310 substrates, 311 inner surfaces, 312 outer surfaces
313 sticking brilliant depression 313A edges
314 slotted eyes, 315 stepped breach
316 first connect finger 317 outer connection pads 319 second connects finger
320 first chips, 321 first active surfaces, 322 first back sides
323 sides, 324 first weld pads
330 sticking brilliant material 341 first bonding wires 342 second bonding wires
350 adhesive bodies, 360 external terminals
370 second chips, 371 second active surfaces, 372 second back sides
374 second weld pads
Embodiment
According to first specific embodiment of the present invention, a kind of window-type ball grid array packaging structure is illustrated in the schematic cross-section of Fig. 2.
See also shown in Figure 2ly, this window-type ball grid array packaging structure 200 mainly comprises substrate 210, first chip 220, sticking brilliant material 230, two or more first bonding wire 240, adhesive body 250 and two or more external terminals 260.This substrate 210 has inner surface 211, outer surface 212, is formed on the sticking brilliant depression 213 and the slotted eye 214 of this inner surface 211, and this slotted eye 214 runs through this outer surface 212 to this sticking brilliant depression 213.This inner surface 211 is the surface that this substrate 210 does not expose to this adhesive body 250, for this first chip 220 is set; This outer surface 212 is for exposing to the surface of this adhesive body 250, for these external terminals 260 are set.This slotted eye 214 can be central slotted eye, in order to appearing two or more first weld pads 224 of this first chip 220, and passing through for these first bonding wires 240.In the present embodiment, this substrate 210 can have stepped breach 215, and it is formed on the side of this outer surface 212 and this slotted eye 214, in order to reduce the camber of these first bonding wires 240.Particularly, as shown in Figure 2, this substrate 210 also has two or more outer connection pads 217 that are formed at this outer surface 212 and two or more first and connects and refer to 216.More specifically, these first connect and refer to that 216 are formed at this stepped breach 215 and can be arranged in this stepped breach 215, electrically connect for these first bonding wires 240.These outer connection pads 217 are generally the circle pad of receiving, and these outer connection pads 217 can be arranged or many row's peripheries are arranged, for engaging these external terminals 260.This substrate 210 can have welding resisting layer 218 in addition, and it is formed at this outer surface 212 but appears these outer connection pads 217.In the present embodiment, this welding resisting layer 218 also appears these and first connects and refer to 216 to form this stepped breach 215.Usually this substrate 210 is a kind of circuit base plate, for example printed circuit board (PCB) or ceramic substrate.
See also shown in Figure 2, this first chip 220 is arranged on this inner surface 211 of this substrate 210 in alignment with this sticking brilliant depression 213, and this first chip 220 has first active surface 221, first back side 222 and two or more sides 223 between this first active surface 221 and this first back side 222.Particularly, the size of this first chip 220 can be slightly less than this sticking brilliant depression 213, and this first chip 220 is placed in this with this first active surface 221 towards the mode part of this substrate 210 and glues in the brilliant depression 213.Edge 213A that should sticking brilliant depression 213 can be positioned at outside this first chip 220 but be close to these sides 223 of this first chip 220, so slit S is formed between these sides 223 and 213 the edge 213A of should sticking crystalline substance caving in.This first chip 220 is formed at these first weld pads 224 of this first active surface 221 in alignment with in this slotted eye 214, for the joint of these first bonding wires 240.In the present embodiment, these first weld pads 224 are positioned at the middle section of this first active surface 221, and promptly these first weld pads 224 are central welding pad.These first weld pads 224 be these first chip, 220 internal integrated circuits to external electrode, the material of these first weld pads 224 can be aluminium, copper or aluminium alloy.In the present embodiment, shown in the enlarged drawing of Fig. 2, this first chip 220 also can have the passivation layer 225 that is covered in this first active surface 221, and wherein this passivation layer 225 appears these first weld pads 224.This passivation layer 225 optional from polyimides (PI, Polyimide), (BCB, Benzocyclobutene) with one of them of silicide, wherein this silicide can comprise silica or silicon nitride to the benzyl ring butylene.
Please consult shown in Figure 2 again, be somebody's turn to do sticking brilliant material 230 and be formed at this sticking brilliant depression 213 interior these first active surfaces 221 with bonding this first chip 220, should sticking brilliant depression 213 limit the shape that this glues brilliant material 230, so that the slit S between these sides 223 of should sticking brilliant material 230 inserting this first chip 220 and should be sticking brilliant 213 the edge 213A of caving in, and local these sides 223 that cover to this first chip 220, with the bonding area that increases this sticking brilliant material 230 and to make the viscous crystal region territory be on-plane surface (as the U-shaped cross section), so can strengthen the adhesion strength of this first chip 220 and this substrate 210.Preferably, depth D that should sticking brilliant depression 213 can be greater than the thickness summation T of this sticking brilliant material 230 and this passivation layer 225 but less than the thickness of this first chip 220, so that these first chip, 220 parts are embedded in this sticking brilliant depression 213, so can reduce the thickness of whole encapsulation.The thickness that should glue brilliant material 230 at this indication is meant that this sticking brilliant material 230 is by the beeline of this passivation layer 225 to the bottom surface of this sticking brilliant depression 213.Preferably, this passivation layer 225 of this first chip 220 is embedded into fully in this sticking brilliant depression 213, so that the peripheral lateral margin of this passivation layer 225 is somebody's turn to do sticking brilliant material 230 sealings, to avoid this passivation layer 225 to produce layering by this first chip 220 or to peel off.Should can be B rank viscose glue (B-stage Adhesive) by sticking brilliant material 230, have the multi-stage curing characteristic, with the coverage effect of these sides 223 of being adjusted at this first chip 220.
Please consult shown in Figure 2ly again, these first weld pads 224 that these first bonding wires 240 pass this slotted eye 214 and electrically connect this first chip 220 to these of this substrate 210 first connect and refer to 216, reach the electrical interconnects between this first chip 220 and this substrate 210.These first bonding wires 240 can be routing and form, and the material of these first bonding wires 240 can be electric conducting materials such as gold or copper.Because these first connect and refer to that 216 are positioned at this stepped breach 215, make this substrate 210 and this first chip 220 have short routing difference in height, reduce the camber of these first bonding wires 240, so can adopt thinner bonding wire realization routing joint.Please consult shown in Figure 2ly again, this sticking brilliant material 230 can more be diffused in this slotted eye 214.Preferably, this sticking brilliant material 230 is through sticking brilliant diffusion and can more seal the end of these first bonding wires 240 at this first chip 220, to prevent to breast the tape and bonding wire opens circuit.
See also shown in Figure 2ly, this adhesive body 250 is formed on this inner surface 211 of this substrate 210 and fills up this slotted eye 214, to seal this first chip 220 and these first bonding wires 240.In the present embodiment, this adhesive body 250 can cover this first back side 222 of this first chip 220.In different embodiment, this adhesive body 250 can appear this first back side 222 of this first chip 220, to increase radiating effect (not drawing among the figure).
Please consult shown in Figure 2 again, these external terminals 260 are arranged at these outer connection pads 217 of this outer surface 212 of this substrate 210, with input and/or the output that is provided as this window-type ball grid array packaging structure 200, so that form electrical connection with external device (as external printed circuit board).These external terminals 260 can comprise two or more soldered balls, Metal Ball, tin cream, contact mat or contact pin.
Therefore, effectively control the sticking brilliant diffusion of this sticking brilliant material 230 by the design of this sticking brilliant depression 213, with part covering these sides 223 to this first chip 220, effectively increase sticking crystal face and amass and change into on-plane surface viscous crystal region territory, so can reduce the thickness of whole encapsulation and strengthen sticking brilliant intensity, avoiding this passivation layer 225 to produce delaminations, and can avoid these sides 223 of this first chip 220 to produce cracked damage by this first chip 220.In addition, by these these sticking brilliant material 230 unlikely edges that are diffused into this substrate 210 of sticking brilliant depression 213 controls,, guarantee good aqueous vapor resistivity so that this adhesive body 250 can seal this sticking brilliant material 230 fully.Outstanding good ground, this sticking brilliant material 230 can more seal the end of these first bonding wires 240 at this first chip 220, causes the problem of breasting the tape or breaking to prevent these first bonding wires 240 because of influenced by mould stream.
The present invention further specifies the manufacture method of aforementioned window type ball grid array packaging structure, is illustrated in assembly schematic cross-section in the manufacturing process of the manufacturing process block diagram of Fig. 3 and Fig. 4 A to Fig. 4 E.
See also shown in Figure 3ly, the manufacturing process of this window-type ball grid array packaging structure mainly comprises following steps: step 1 provides substrate; Step 2, temporary sticking crystalline substance; Step 3 electrically connects; Step 4, sticking brilliant diffusion; Step 5 forms adhesive body; And step 6, external terminal is set.And cooperate Fig. 4 A to Fig. 4 E explanation as after.
At first, execution in step 1.Shown in Fig. 4 A, this substrate 210 is provided, this inner surface 211 of this substrate 210 has been formed with this sticking brilliant depression 213 and this slotted eye 214, and this slotted eye 214 runs through this outer surface 212 to this sticking crystalline substance depression 213, and formation should sticking brilliant material 230 in this sticking brilliant depression 213.Wherein, the bottom surface of this sticking brilliant depression 213 can not be provided with line layer, is beneficial to mechanical type and forms the internal wiring structure that this sticking brilliant depression can not be destroyed this substrate 210 at 213 o'clock.Preferably, should glue the thick attitude colloid of glue that brilliant material 230 can be multi-stage curing, when being formed at this substrate 210, should have preferable flowability by sticking brilliant material 230, so can be formed at this sticking brilliant depression 213 in the mode of screen painting (Screen Printing) or stencil printing (Stencil Printing).Should not fill up this sticking brilliant depression 213 by sticking brilliant material 230, to appear this slotted eye 214.Should sticking brilliant material 230 can be copline or with this inner surface 211 of this substrate 210 a little more than this inner surface 211.These of this substrate 210 first connect finger 216 and are same line layer with these outer connection pads 217.This substrate 210 can have welding resisting layer 218 in addition, and it is formed at this outer surface 212.This welding resisting layer 218 also appears these outer connection pads 217, and this welding resisting layer 218 can more constitute stepped breach 215 and first connect and refer to 216 to appear these.
Then, execution in step 2.Shown in Fig. 4 B, utilize the adhesion of this sticking brilliant material 230 to make this first chip 220 aim at this sticking brilliant depression 213 and temporary this inner surface 211 that is pasted on this substrate 210.This first chip 220 embedding slightly sinks in this sticking brilliant depression 213, and make this sticking brilliant material 230 not excessive deformation with do not change the glue scope of overflowing.Wherein should glue this first active surface 221 of brilliant material 230 these first chips 220 of temporary adhesion.First weld pad 224 of this first chip 220 is in alignment with in this slotted eye 214.Particularly, step 2 needs pre-roasting this substrate 210, and the viscosity that makes this sticking brilliant material 230 reach semi-cured state and have thermal in room temperature is for this first chip 220 of adhesion.At this moment, utilize sticking brilliant temperature to adjust this sticking brilliant material 230, be difficult for the diffusing profile of collapsing so have in lower flowability, so avoid this glue brilliant material 230 spread covering cause to these first weld pads 224 can't routing problem.
Then, execution in step 3.Shown in Fig. 4 C, routing forms these first bonding wires 240 by this slotted eye 214, first connects and refers to 216 with these first weld pads 224 of electrically connecting this first chip 220 to these of this substrate 210.
Then, execution in step 4.Shown in Fig. 4 D, utilize and to heat and pressuring method puts on this first chip 220 so that should sticking brilliant material 230 diffusions, and make this first chip 220 more embedding sink in this sticking brilliant depression 213.Heating-up temperature in this step and pressure should be higher than the operating condition in the step 2 " temporary sticking crystalline substance ".When this first chip 220 when should sticking brilliant depression 213 overlaying, because the temperature raising can make this sticking brilliant material 230 have preferable flowability, yet should sticking brilliant depression 213 limit the shape that this glues brilliant material 230, so that should sticking brilliant material 230 diffusions and these sides 223 of inserting this first chip 220 with should the sticking brilliant slit S (as shown in Figure 2) that caves between 213 edges, more local covering is to these sides 223 of this first chip 220.Owing to should after forming these first bonding wires 240, just can produce dilatating and deformable by sticking brilliant material 230, so even should sticking brilliant material 230 produce glue to these first bonding wires 240 that overflow still can not cause can't routing problem, even help fixing of these first bonding wires 240.For example in step 4, preferably, this sticking brilliant material 230 can more be diffused in this slotted eye 214.Should glue the end that brilliant material 230 can coat these first bonding wires 240, and after this sticking brilliant material 230 solidifies, just can fixedly seal an end of these first bonding wires 240, breast the tape to avoid in follow-up sealing process, producing.In the present embodiment, curing of this sticking brilliant material 230 can be executed in that sticking brilliant diffusing step 4 carries out simultaneously or after sticking brilliant diffusing step 4, or finishes in step 5.In addition, see also Fig. 2 and shown in Figure 3, more specifically, in sticking brilliant diffusing step 4, this passivation layer 225 of this first chip 220 is embedded into fully in this sticking brilliant depression 213, so that the peripheral lateral margin quilt of this passivation layer 225 should sticking brilliant material 230 sealings.
Afterwards, execution in step 5.Shown in Fig. 4 E, form this adhesive body 250 to shift mould envelope (Transfer Molding) technology, this adhesive body 250 is formed on this inner surface 211 of this substrate 210 and fills up this slotted eye 214, to seal this first chip 220 and these first bonding wires 240.Owing to should glue the shape that brilliant depression 213 can limit this sticking brilliant material 230, unlikely periphery toward this substrate 210 spreads, so this adhesive body 250 can seal this sticking brilliant material 230 fully.
At last, execution in step 6 can utilize the reflow technology to make these external terminals 260 be arranged at these outer connection pads 217, to make window-type ball grid array packaging structure 200 as shown in Figure 2.In different embodiment, the manufacture method of this window-type ball grid array packaging structure 200 can comprise the step that is provided with of second chip (not drawing among the figure) in addition, in back-to-back storehouse mode this second chip is arranged on first back side 222 of this first chip 220.
According to second specific embodiment of the present invention, another kind of window-type ball grid array packaging structure is illustrated in the schematic cross-section of Fig. 5, and its basic framework is identical with first specific embodiment, but but storehouse multicore sheet more.
See also shown in Figure 5ly, this window-type ball grid array packaging structure 300 mainly comprises substrate 310, first chip 320, sticking brilliant material 330, two or more first bonding wire 341, adhesive body 350 and two or more external terminals 360.This substrate 310 has inner surface 311, outer surface 312, is formed on the sticking brilliant depression 313 and the slotted eye 314 of this inner surface 311, and this slotted eye 314 runs through this outer surface 312 to this sticking brilliant depression 313.This substrate 310 can have stepped breach 315, and it is formed on the side of this outer surface 312 and this slotted eye 314.In the present embodiment, the both sides that this outer surface 312 is positioned at this stepped breach 315 can be formed with two or more and first connect and refer to 316, and this inner surface 311 can be formed with two or more and second connect and refer to 319 outside this sticking brilliant depression 313.And this substrate 310 can be multilayer board, so that these first connect and refer to that 316 second connect and refer to that 319 are electrically connected to two or more outer connection pads 317 of this outer surface 312 with these.This first chip 320 is arranged on this inner surface 311 of this substrate 310 in alignment with this sticking brilliant depression 313, and this first chip 320 has first active surface 321, first back side 322 and two or more sides 323 between this first active surface 321 and this first back side 322.See also shown in Figure 5, be somebody's turn to do sticking brilliant material 330 and be formed at this sticking brilliant depression 313 interior these first active surfaces 321 with bonding this first chip 320, should sticking brilliant depression 313 limit the shape that this glues brilliant material 330, so that the slit between these sides 323 of should sticking brilliant material 330 inserting this first chip 320 and should be sticking brilliant 313 the edge 313A of caving in, and local these sides 323 that cover to this first chip 320, so these first chip, 320 parts are embedded in this sticking brilliant depression 313, to reduce the thickness of whole encapsulation.
See also shown in Figure 5ly, this first chip 320 can have two or more first weld pads 324 that is formed at this first active surface 321, and it is in alignment with in this slotted eye 314.These first weld pads 324 that these first bonding wires 341 pass this slotted eye 314 and electrically connect this first chip 320 to these of this substrate 310 first connect and refer to 316.In the present embodiment, this window-type ball grid array packaging structure 300 can comprise second chip 370 in addition, it has second active surface 371 and the second relative back side 372, this second chip 370 is arranged on first back side 322 of this first chip 320 in back-to-back storehouse mode, promptly this second back side 372 of this second chip 370 is attached at this first back side 322 of this first chip 320, and makes this second active surface 371 for up.This second chip 370 also has two or more second weld pads 374, and it is formed at this second active surface 371.In the present embodiment, this second chip 370 can be the identical chip of essence with this first chip 320, for example chip size, electrical functionality are all identical with the weld pad allocation position, so these second weld pads 374 also are central welding pad, so as to reducing the chip kind to reduce the manufacturing cost and the management cost of chip.Electrically connect these second weld pads 374 to these of this substrate 310 by two or more second bonding wire 342 and second connect and refer to 319, reach the electrical interconnects of this second chip 370 and this substrate 310.This adhesive body 350 is formed on this inner surface 311 of this substrate 310 and fills up this slotted eye 314, to seal this first chip 320, this second chip 370, these first bonding wires 341 and these second bonding wires 342.These external terminals 360 are arranged at these outer connection pads 317 of this outer surface 312 of this substrate 310, for to outer engagement.
Cave in 313 to limit the shape of this sticking brilliant material 330 by this sticking crystalline substance, this sticking brilliant material 330 is extended and local cover and the periphery of glue that can not overflow to this inner surface 311 of this substrate 310 to these sides 323 of this first chip 320, these second connect and refer to 319 to avoid excessive glue pollution, so this window-type ball grid array packaging structure 300 does not need to reserve the glue admissible error of overflowing, the size of dwindling whole encapsulation whereby at this inner surface 311.Therefore, this window-type ball grid array packaging structure 300 not only has the thickness that reduces whole encapsulation and strengthens sticking brilliant intensity to avoid the effect of chip delamination, also can dwindle the size of whole encapsulation.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction, and the scope that the technical solution of the present invention scope is worked as according to appended claims is as the criterion.Any those skilled in the art can utilize the technology contents of above-mentioned announcement to make a little change or be modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention,, all still belong in the scope of technical solution of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.

Claims (12)

1, a kind of window-type ball grid array packaging structure is characterized in that, comprises:
Substrate has inner surface, outer surface, is formed on the sticking brilliant depression and the slotted eye of this inner surface, and this slotted eye runs through this outer surface to should sticking brilliant depression;
First chip is arranged at this inner surface of this substrate in alignment with this sticking brilliant depression, this first chip has first active surface, first back side and two or more sides between this first active surface and this first back side;
Sticking brilliant material, be formed at interior this first active surface of this sticking brilliant depression with bonding this first chip, should sticking brilliant depression limit the shape that this glues brilliant material, so that should insert this side of this first chip and be somebody's turn to do the slit of gluing between the brilliant concave edges by sticking brilliant material, and local this side that covers to this first chip;
Two or more first bonding wire passes this slotted eye and electrically connects this first chip to this substrate;
Adhesive body is formed on this inner surface of this substrate and fills up this slotted eye, seals this first chip and this first bonding wire; And
Two or more external terminals are arranged at this outer surface of this substrate.
2, window-type ball grid array packaging structure according to claim 1, it is characterized in that, described first chip also has the passivation layer that is covered in this first active surface, this passivation layer is embedded into fully in this sticking brilliant depression, and edge that should sticking brilliant depression is positioned at outside this first chip but is close to this side of this first chip, so that the peripheral lateral margin of this passivation layer is by should sticking brilliant material seal.
3, window-type ball grid array packaging structure according to claim 2, it is characterized in that, the degree of depth of described sticking brilliant depression is greater than the thickness summation of this sticking brilliant material and this passivation layer but less than the thickness of this first chip, so that this first chip part is embedded in this sticking brilliant depression.
4, window-type ball grid array packaging structure according to claim 1 is characterized in that, described sticking brilliant material more is diffused in this slotted eye.
5, window-type ball grid array packaging structure according to claim 4 is characterized in that, described sticking brilliant material more seals the end of this first bonding wire at this first chip.
6, window-type ball grid array packaging structure according to claim 1 is characterized in that, described substrate has stepped breach, and it is formed on the side of this outer surface and this slotted eye.
7, window-type ball grid array packaging structure according to claim 1, it is characterized in that, described first chip has two or more first weld pads that is formed at this first active surface, it is in alignment with in this slotted eye, joint for this first bonding wire, this window-type ball grid array packaging structure comprises second chip in addition, it is arranged on first back side of this first chip and has two or more second weld pads in back-to-back storehouse mode, and this window-type ball grid array packaging structure comprises two or more second bonding wire in addition, and it electrically connects this second weld pad to this substrate.
8, a kind of manufacture method of window-type ball grid array packaging structure is characterized in that, comprises following steps:
Substrate is provided, has inner surface, outer surface, be formed on the sticking brilliant depression and the slotted eye of this inner surface, this slotted eye runs through this outer surface to should sticking brilliant depression, and forms in this sticking brilliant depression and glue brilliant material;
First chip is set, this first chip is aimed at this sticking brilliant depression and temporary this inner surface that is pasted on this substrate, wherein this first chip has first active surface, first back side and two or more sides between this first active surface and this first back side, wherein should glue this first active surface of this first chip of the temporary adhesion of brilliant material;
Routing forms two or more first bonding wire, passes this slotted eye and electrically connects this first chip to this substrate;
Glue brilliant diffusion, to apply pressure to this first chip, the shape that should sticking brilliant depression limit this sticking brilliant material so that should sticking brilliant diffuse and this side of inserting this first chip with should sticking brilliant concave edges between the slit, and local covering is to this side of this first chip;
Form adhesive body, be formed on this inner surface of this substrate and fill up this slotted eye, to seal this first chip and this first bonding wire; And
Two or more external terminals are set, are arranged at this outer surface of this substrate.
9, the manufacture method of window-type ball grid array packaging structure according to claim 8, it is characterized in that, described first chip also has the passivation layer that is covered in this first active surface, and in this sticking brilliant diffusing step, this passivation layer is embedded into fully in this sticking brilliant depression, and edge that should sticking brilliant depression is positioned at outside this first chip but is close to this side of this first chip, so that the peripheral lateral margin of this passivation layer is by should sticking brilliant material seal.
10, the manufacture method of window-type ball grid array packaging structure according to claim 8 is characterized in that, in this sticking brilliant diffusing step, this sticking brilliant material more is diffused in this slotted eye.
11, the manufacture method of window-type ball grid array packaging structure according to claim 10 is characterized in that, described sticking brilliant material more seals the end of this first bonding wire at this first chip.
12, the manufacture method of window-type ball grid array packaging structure according to claim 8, it is characterized in that, described first chip has two or more first weld pads that is formed at this first active surface, and it is in alignment with in this slotted eye, for the joint of this first bonding wire; The step that comprises in addition has: second chip is set on first back side of this first chip in back-to-back storehouse mode, this second chip has two or more second weld pads; And forming two or more second bonding wire, it electrically connects this second weld pad to this substrate.
CN2008101320618A 2008-07-22 2008-07-22 Window-type ball grid array packaging structure and manufacturing method thereof Expired - Fee Related CN101635280B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2008101320618A CN101635280B (en) 2008-07-22 2008-07-22 Window-type ball grid array packaging structure and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2008101320618A CN101635280B (en) 2008-07-22 2008-07-22 Window-type ball grid array packaging structure and manufacturing method thereof

Publications (2)

Publication Number Publication Date
CN101635280A true CN101635280A (en) 2010-01-27
CN101635280B CN101635280B (en) 2011-02-09

Family

ID=41594410

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008101320618A Expired - Fee Related CN101635280B (en) 2008-07-22 2008-07-22 Window-type ball grid array packaging structure and manufacturing method thereof

Country Status (1)

Country Link
CN (1) CN101635280B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105097574A (en) * 2014-05-12 2015-11-25 丰田自动车株式会社 Semiconductor device and method for producing semiconductor device
CN106024738A (en) * 2015-03-30 2016-10-12 意法半导体公司 Semiconductor device with sloped sidewall and related method
CN107895716A (en) * 2017-10-30 2018-04-10 睿力集成电路有限公司 For manufacturing the method and semiconductor packaging structure of semiconductor chip
WO2024032023A1 (en) * 2022-08-08 2024-02-15 长鑫存储技术有限公司 Package structure and preparation method therefor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100463157C (en) * 2006-07-10 2009-02-18 南茂科技股份有限公司 Encapsulation structure for preventing adhesive crystal glue from polluting wafer welding cushion
CN101207105A (en) * 2006-12-20 2008-06-25 矽品精密工业股份有限公司 Windowing type ball grid array substrate and semiconductor package

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105097574A (en) * 2014-05-12 2015-11-25 丰田自动车株式会社 Semiconductor device and method for producing semiconductor device
CN105097574B (en) * 2014-05-12 2018-05-29 丰田自动车株式会社 The manufacturing method and semiconductor device of semiconductor device
CN106024738A (en) * 2015-03-30 2016-10-12 意法半导体公司 Semiconductor device with sloped sidewall and related method
CN107895716A (en) * 2017-10-30 2018-04-10 睿力集成电路有限公司 For manufacturing the method and semiconductor packaging structure of semiconductor chip
CN107895716B (en) * 2017-10-30 2019-01-15 长鑫存储技术有限公司 Method for manufacturing semiconductor chip and semiconductor packaging structure
WO2024032023A1 (en) * 2022-08-08 2024-02-15 长鑫存储技术有限公司 Package structure and preparation method therefor

Also Published As

Publication number Publication date
CN101635280B (en) 2011-02-09

Similar Documents

Publication Publication Date Title
JP2001077293A (en) Semiconductor device
JP6242231B2 (en) Semiconductor device and manufacturing method thereof
US7786568B2 (en) Window BGA semiconductor package
JPH11260851A (en) Semiconductor device and its manufacture
CN101635280B (en) Window-type ball grid array packaging structure and manufacturing method thereof
JP2003007902A (en) Electronic component mounting substrate and mounting structure
JPH1012676A (en) Semiconductor device
CN110299295B (en) Semiconductor bonding packaging method
JPH08153830A (en) Semiconductor device and manufacture thereof
JP5063542B2 (en) Window-type BGA package and manufacturing method thereof
KR20110035844A (en) Light emitting semiconductor device
TWI394240B (en) Flip chip package eliminating bump and its interposer
TWI435429B (en) Semiconductor package with holes through holes
JP2010147225A (en) Semiconductor device and its manufacturing method
TWI394259B (en) Bga package stacked with multiple substrates
JP4688443B2 (en) Manufacturing method of semiconductor device
JP3968321B2 (en) Semiconductor device and manufacturing method thereof
JP2806362B2 (en) Method for manufacturing semiconductor device
JPH0831871A (en) Interface sealing film used for surface mount electronic device and surface mount structure
TWI395319B (en) Semiconductor assembly to avoid break of solder joints of pop stack
US20230197666A1 (en) Chip packaging structure and method for preparing the same, and method for packaging semiconductor structure
JP3923661B2 (en) Semiconductor device
TWI720728B (en) Chip on film package structure and manufacturing method thereof
JPH0974149A (en) Small package and manufacture
TWI275167B (en) Package structure and manufacturing method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20110209

Termination date: 20180722