CN101634672A - Micro-wave on-wafer testing method based on unknown material substrate - Google Patents
Micro-wave on-wafer testing method based on unknown material substrate Download PDFInfo
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Abstract
The invention relates to an on-wafer testing method for a micro-wave element based on an unknown material substrate. The method comprises the following steps: firstly, a TRL calibration part, an open circuit resonator and an element to be measured which are suitable for micro-wave on-wafer testing are prepared on a substrate; secondly, a micro-wave on-wafer testing system is calibrated by using a TRL calibration method; thirdly, resonation point of the open circuit resonator is tested by the calibrated micro-wave on-wafer testing system; fourthly, effective dielectric constant and transmission line impedance of the substrate are calculated according to a measured resonation point; fifthly, an S parameter of the element to be measured is measured, and reference impedance of the S parameter is the impedance obtained in the last step; and finally, a reference S parameter with 50 omega impedance is acquired by adopting a method of S parameter impedance conversion. The method has the advantages that the system impedance of the TRL calibration part can be calculated through testing the open circuit resonator; the method combined with standard TRL calibration not only can carry out on-wafer testing on the micro-wave element under the condition that the characteristic of a material is unknown, but also can be combined with a method of field analysis to calculate the real characteristic of the material.
Description
Technical field
The present invention relates to a kind of microwave at chip test method, be suitable under the condition of material behavior the unknown, system being carried out calibration testing, and and then the dielectric property of definite material, obtain the scattering parameter of element.The present invention is particularly suitable for the test and the modeling of new material film substrate microwave component, and the application in microwave circuit especially microwave monolithic integrated circuit (MMIC) has great significance to the new material film.Belong to technical field of microwave application.
Background technology
High dielectric constant material film (as strontium lead titanate) and ferroelectric thin film (as barium strontium titanate) have been widely used in the microwave circuit, and along with going deep into of using, the dielectric property method of testing of material becomes the research focus.The dielectric property of material is measured the most direct method that adopts usually, be the appearance value and the dielectric thickness of test slab electric capacity, obtain the dielectric property of material then by the appearance value computing formula of capacity plate antenna, the precision of this method of testing and dielectric thickness measuring accuracy are directly related.In microwave circuit, adopt the method for capacity plate antenna test to determine that the dielectric property of material and then the method for definite microwave transmission characteristic are easy to generate bigger error, such error can be brought difficulty to the microwave circuit especially design of MMIC circuit.
For the MMIC circuit, adopt usually and microwave component is tested and modeling in the method for built-in testing.Obtain microwave component scattering parameter characteristic accurately, need to utilize and to calibrate, port surface is positioned near the element port at the sheet corrector strip.Usually at the adoptable calibration steps of built-in testing short circuit load method through (SOLT), line reflection reflection load method (LRRM), straight-through reflects transmission line method (TRL) are arranged out.Adopt SOLT, LRRM calibration all to need the ohmic load equal with reference impedance as calibrating device, under the condition of material behavior the unknown, the reference impedance of calibrating device can't determine that therefore SOLT calibration and LRRM calibration all can't be used under this condition.
The difference of TRL calibration and SOLT calibration and LRRM calibration is that the TRL calibration does not need resistance as load, in the process of calibration and test, can guarantee the consistance of reference impedance like this, therefore can obtain the exact value of element scattering parameter (S parameter) matrix by TRL calibration and test.Because dielectric property the unknown of material has caused reference impedance uncertain, the scattering parameter reference impedance that this method is measured also is uncertain, and its test result still can't be used for circuit design.
Consider the relation of microwave transmission line impedence and microwave transmission line phase velocity:
Wherein: Z
0Be transmission line impedance, Z
0 0Be the microwave transmission line impedence that air is filled, ε
eBe effective dielectric constant, λ
0Be vacuum medium wavelength, λ
pBe phase wavelength.
By above relational expression as can be known, if can know the phase wavelength of transmission line, just can obtain transmission line impedance by effective dielectric constant.And the phase wavelength of transmission line is easy to be obtained by the quarter-wave transmission line tuning-points.
Summary of the invention
The objective of the invention is test problem at the unknown material substrate microwave component, invent a kind of method of testing, the uncertain problem of reference impedance when solving the TRL calibration by test open circuit resonator, this method not only can be extracted the scattering parameter of microwave component, also can analyze the characteristic of following two kinds of material substrates: single layer substrate can directly be tried to achieve the dielectric property of material; The multilager base plate that dielectric property the unknown of layer of material is arranged can be tried to achieve the dielectric property of unknown material by the substrate effective dielectric constant of trying to achieve by the method for field analysis such as finite element method, method of moment, quasi-static method.
Technical solution of the present invention: a kind of microwave based on unknown material substrate is characterized in that at chip test method this method comprises the steps:
One, on substrate, adopt integrated circuit thin-film technique or thick-film technique preparation to be suitable for microwave at the TRL of built-in testing calibrating device, open circuit resonator and element under test;
Two, calibrate microwave in the built-in testing system with the full dual-port calibration function of TRL of vector network analyzer;
Three, the resonator of will opening a way is connected to the good microwave of calibration in the built-in testing system, in vector network analyzer, read the scattering parameter of open circuit resonator, comprise reflection parameters and transmission parameter, first zero crossing of the difference curves of transmission parameter amplitude is exactly the tuning-points of open circuit resonator, and the frequency at this point place is exactly the resonance frequency of open circuit resonator;
Four, calculate substrate effective dielectric constant, transmission line impedance according to the resonance frequency of measuring gained;
Five, element under test is connected to the good microwave of calibration in the built-in testing system, reads the scattering parameter of open circuit resonator in vector network analyzer, the reference impedance of scattering parameter is the impedance that obtains in the step 4;
Six, the method for employing scattering parameter impedance conversion obtains the standard scattering parameter of 50 Ω impedances.
The advantage that the present invention has: the standard component that is used to calibrate does not contain load, therefore can avoid the systematic measurement error that causes because of load making error, test error; Method by resonance is measured the dielectric property convenient data processing of material, measuring accuracy height; Adopt TRL calibration steps calibration system, measuring accuracy can be effectively guaranteed; The characteristic of measuring sensor need not to know the dielectric property of material, the error accumulation of avoiding data processing to bring.
Description of drawings
Accompanying drawing 1 is the open circuited transmission line synoptic diagram in the TRL calibrating device.
Accompanying drawing 2 is the short-circuited transmission line synoptic diagram in the TRL calibrating device.
Accompanying drawing 3 is the straight-through synoptic diagram in the TRL calibrating device.
Accompanying drawing 4 is the long line synoptic diagram in the TRL calibrating device.
Accompanying drawing 5 is open circuit resonator synoptic diagram.
Accompanying drawing 6 is detected element D test structure synoptic diagram.
Fig. 4 middle or long line can be the different transmission lines of one or more structure equal length.
Embodiment
Adopt Fig. 1, Fig. 2, Fig. 3, Fig. 4 TRL calibrating device calibration test system, with the resonator of opening a way of the test system and test Fig. 5 after calibrating.The value that can obtain phase wavelength according to the physical length and the resonance frequency of resonator.
λ
p＝4L (3)
Can calculate effective dielectric constant ε thus
eWith reference impedance Z
0For:
Consider the influence of open circuit effect and parasitic parameter, the available following formula of formula (3) is replaced:
λ
p＝4L′(6)
Wherein L ' is a transmission line physical length of considering the equivalence of open circuit effect and parasitic parameter influence, and its calculating can be obtained by the method for field analysis;
Can and then obtain the actual specific inductive capacity of substrate by the method for equivalent-circuit model or field analysis by effective dielectric constant, at substrate is that common substrate adds under the situation of high dielectric constant material or ferroelectric thin film, can be by the method match high dielectric constant material of field analysis or the specific inductive capacity of ferroelectric thin film.
With the good system testing element to be measured of calibration, the reference impedance of gained scattering parameter is the impedance that formula (5) is tried to achieve.The scattering parameter that obtains 50 Ω reference impedances can carry out conversion with following formula:
Wherein:
S
11, S
12, S
21, S
22Be the scattering parameter under 50 Ω, S '
11, S '
12, S '
21, S '
22Scattering parameter during for the impedance that equals when reference impedance to try to achieve according to formula (5).
Embodiment
1), adopt board structure to be: 360um sapphire+2um gallium nitride (GaN)+0.15um barium strontium titanate (BST), the Sapphire Substrate specific inductive capacity is 5.5, the GaN specific inductive capacity is 9.0, the unknown of BST specific inductive capacity.Adopt the integrated circuit thin-film technique to prepare TRL calibrating device among Fig. 1, Fig. 2, Fig. 3, Fig. 4, Fig. 5 open a way resonator and Fig. 6 element under test, all figures all adopt the CPW structure, live width 120um wherein, slit 25um, direct-through line length is 250um, and two long line lengths are respectively 2090um and 3810um, open-circuit line length 1630um.
2), calibrate microwave in the built-in testing system with the full dual-port calibration function of TRL of vector network analyzer, Fig. 1, Fig. 2, Fig. 3, Fig. 4 TRL calibrating device of preparation in the calibrating device employing step 1;
3), Fig. 5 is opened a way resonator is connected to the good microwave of calibration in the built-in testing system, read the scattering parameter of open circuit resonator and therefrom obtain the amplitude of transmission parameter in vector network analyzer, trying to achieve resonance frequency according to first zero crossing of the difference curves of transmission parameter amplitude is 18.3GHz;
4), vacuum medium wavelength λ
0Being 16.4mm, can be 1.69mm in the hope of L ' by the field analysis instrument, obtains phase wavelength λ according to formula (6)
pBe 6.76mm, can calculate effective dielectric constant ε by formula (4)
eBe 5.89, the CPW line characteristic impedance z of air dielectric
0 0Be 89, can get reference impedance z by formula (5)
0Be 36.7 Ω.
5), element under test is connected to the good microwave of calibration in the built-in testing system, in vector network analyzer, read the scattering parameter of open circuit resonator, save as standard two port scattering parameter file (S2P file) forms, file (the first behavior format description in the following file as follows, wherein # is the description line symbol, hz represents that cps is hertz＜Hz 〉, s represents that the later data of second row are the scattering parameter form, ri represents that scattering parameter represents that with the form of real part imaginary part r50 represents that reference impedance is 50 Ω.Second row is the data of S2P file later, and data are expressed as follows content successively with real number form: frequency, S11 real part, S11 imaginary part, S21 real part, S21 imaginary part, S12 real part, S12 imaginary part, S22 real part, S22 imaginary part).
#hz?s?ri?r?50
5e+009 0.9671 -0.0936 -0.007778 0.1027 -0.007778
0.1027 0.9539 -0.1383
6e+009 0.9613 -0.1095 -0.00222 0.1261 -0.002113
0.1262 0.9452 -0.1613
7e+009 0.9547 -0.1256 0.005074 0.1485 0.005257
0.1484 0.9352 -0.1846
8e+009 0.9478 -0.1419 0.01318 0.1696 0.01343
0.1698 0.9242 -0.2072
9e+009 0.9405 -0.1571 0.02235 0.1907 0.02296
0.1907 0.9129 -0.2294
10e+09 0.9308 -0.1724 0.03323 0.2109 0.03355
0.211 0.9 -0.2512
11e+09 0.9213 -0.1874 0.04468 0.2306 0.04498
0.2305 0.8861 -0.2718
12e+09 0.9102 -0.2019 0.05951 0.2496 0.06002
0.2496 0.8695 -0.2925
13e+09 0.9067 -0.2162 0.07173 0.2686 0.07192
0.2681 0.8497 -0.3152
14e+09 0.8871 -0.2371 0.0864 0.2816 0.08708
0.2818 0.8403 -0.3218
15e+09 0.8759 -0.2511 0.1025 0.2991 0.1042
0.2999 0.8246 -0.3464
The scattering parameter reference impedance that records should be 4) in the reference impedance of trying to achieve, therefore be with this file modification:
#hz?s?ri?r?36.7
5e+009 0.9671 -0.0936 -0.007778 0.1027 -0.007778
0.1027 0.9539 -0.1383
6e+009 0.9613 -0.1095 -0.00222 0.1261 -0.002113
0.1262 0.9452 -0.1613
7e+009 0.9547 -0.1256 0.005074 0.1485 0.005257
0.1484 0.9352 -0.1846
8e+009 0.9478 -0.1419 0.01318 0.1696 0.01343
0.1698 0.9242 -0.2072
9e+009 0.9405 -0.1571 0.02235 0.1907 0.02296
0.1907 0.9129 -0.2294
10e+09 0.9308 -0.1724 0.03323 0.2109 0.03355
0.211 0.9 -0.2512
11e+09 0.9213 -0.1874 0.04468 0.2306 0.04498
0.2305 0.8861 -0.2718
12e+09 0.9102 -0.2019 0.05951 0.2496 0.06002
0.2496 0.8695 -0.2925
13e+09 0.9067 -0.2162 0.07173 0.2686 0.07192
0.2681 0.8497 -0.3152
14e+09 0.8871 -0.2371 0.0864 0.2816 0.08708
0.2818 0.8403 -0.3218
15e+09 0.8759 -0.2511 0.1025 0.2991 0.1042
0.2999 0.8246 -0.3464
6), obtain the standard scattering parameter of 50 Ω impedances by formula (7)-(10) impedance conversion, the scattering parameter file that forms after the conversion is as follows:
#hz?s?ri?r?50
5e+009 0.9545 -0.1191 -0.00562 0.1304 -0.00562
0.1304 0.9361 -0.1751
6e+009 0.9457 -0.1388 0.003243 0.1595 0.00338
0.1595 0.9228 -0.2035
7e+009 0.9357 -0.1584 0.01451 0.1868 0.01473
0.1867 0.9078 -0.2317
8e+009 0.9251 -0.1781 0.02693 0.2123 0.02725
0.2124 0.8914 -0.2586
9e+009 0.9138 -0.196 0.04084 0.2374 0.04159
0.2373 0.8744 -0.2847
10e+09 0.8996 -0.2135 0.05692 0.2607 0.05732
0.2608 0.8553 -0.3096
11e+09 0.8855 -0.2305 0.07372 0.2831 0.07409
0.283 0.8351 -0.3326
12e+09 0.8696 -0.2461 0.09466 0.3039 0.09529
0.3038 0.8116 -0.3548
13e+09 0.8631 -0.262 0.1125 0.3246 0.1127
0.324 0.7839 -0.379
14e+09 0.8365 -0.2846 0.1324 0.3375 0.1333
0.3376 0.7712 -0.3841
15e+09 0.8207 -0.2986 0.1549 0.3552 0.1571
0.356 0.7486 -0.4099。
Claims (5)
1, based on the microwave of unknown material substrate at chip test method, it is characterized in that this method comprises the steps:
One, on substrate, adopt integrated circuit thin-film technique or thick-film technique preparation to be suitable for microwave at the TRL of built-in testing calibrating device, open circuit resonator and element under test;
Two, calibrate microwave in the built-in testing system with the full dual-port calibration function of TRL of vector network analyzer;
Three, the resonator of will opening a way is connected to the good microwave of calibration in the built-in testing system, in vector network analyzer, read the scattering parameter of open circuit resonator, comprise reflection parameters and transmission parameter, first zero crossing of the difference curves of transmission parameter amplitude is exactly the tuning-points of open circuit resonator, and the frequency at this point place is exactly the resonance frequency of open circuit resonator;
Four, calculate substrate effective dielectric constant, transmission line impedance according to the resonance frequency of measuring gained;
Five, element under test is connected to the good microwave of calibration in the built-in testing system, reads the scattering parameter of open circuit resonator in vector network analyzer, the reference impedance of scattering parameter is the impedance that obtains in the step 4;
Six, the method for employing scattering parameter impedance conversion obtains the standard scattering parameter of 50 Ω impedances.
2, the microwave based on unknown material substrate according to claim 1 is at chip test method, it is characterized in that described board structure is: 360um sapphire+2um gallium nitride+0.15um barium strontium titanate, the Sapphire Substrate specific inductive capacity is 5.5, and the gallium nitride specific inductive capacity is 9.0.
3, the microwave based on unknown material substrate according to claim 1 is at chip test method, the figure that it is characterized in that TRL calibrating device, open circuit resonator and the element under test of the preparation of described employing integrated circuit thin-film technique or thick-film technique all adopts the CPW structure, live width 120um wherein, slit 25um, direct-through line length is 250um, two long line lengths are respectively 2090um and 3810um, open-circuit line length 1630um.
4, the microwave based on unknown material substrate according to claim 1 is at chip test method, and it is 18.3GHz that first zero crossing that it is characterized in that the difference curves of described transmission parameter amplitude is tried to achieve resonance frequency.
5, the microwave based on unknown material substrate according to claim 1 is characterized in that the described scattering parameter of reading the open circuit resonator in vector network analyzer at chip test method, and the reference impedance of scattering parameter is 36.7 Ω.
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