CN101624723B - Mode and device for forming crystal - Google Patents
Mode and device for forming crystal Download PDFInfo
- Publication number
- CN101624723B CN101624723B CN2008101326953A CN200810132695A CN101624723B CN 101624723 B CN101624723 B CN 101624723B CN 2008101326953 A CN2008101326953 A CN 2008101326953A CN 200810132695 A CN200810132695 A CN 200810132695A CN 101624723 B CN101624723 B CN 101624723B
- Authority
- CN
- China
- Prior art keywords
- crucible
- heat abstractor
- crystal
- nucleation
- mode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The invention relates to a mode and a device for forming a crystal, which are mainly characterized in that a mode of applying local high cooling to a bottom layer of a crucible is adopted so that the radial extension direction of a liquid phase raw material is formed with most of temperature difference areas to control the formation position and the growing direction of each initially formed nucleus so that each initially formed nucleus grows upwards to form a complete polycrystalline silicon crystal which has the characteristics of high electric inactive crystal boundaries and few number of the crystal boundaries in unit cross-sectional area; particularly, a mode of performing longitudinal cutting along the growing direction of the initially formed nucleus can be further adopted to reduce the crystal boundaries and further increase the photoelectric conversion efficiency of a chip.
Description
Technical field
The relevant improvement that polysilicon crystal forming method and device are arranged of the present invention; Be intended to solve the moulding of existing known techniques institute and can't make just that the volume of nucleation maximizes or tool electricity passivity crystal boundary, cause chip electricity passivity and the lower problem of electricity conversion by the moulding of polysilicon crystal cut.
Background technology
Press, solar photocell belongs to semi-conductive a kind of, so be called solar chip again, silicon (silicon) is the raw material representative of at present general solar cell, and its electricity generating principle is for to convert solar energy to electric energy.The chip material of solar energy electric substrate (Solar PV Cell) has a variety of; Can be divided into silicon single crystal (Monocrystalline Silicon), polysilicon (Polycrystalline/Multicrystalline Silicon), non-crystalline silicon (Amorphous Silicon) haply; And other non-silicon materials, wherein common with silicon single crystal and two types of polysilicons; And the composed atom of silicon single crystal is all according to certain rule, and the product efficiency of conversion is higher; But relative manufacturing cost is also comparatively expensive, though the product in early stage market is main with silicon single crystal still, because the production cost of silicon single crystal is higher; Add that the technical progress of polysilicon is very fast in recent years; Make the efficiency of conversion of polysilicon significantly improve, under advantage cheaply, the existing trend that replaces single crystal silicon product of polysilicon.
And at present industry institute generally the polysilicon crystal manufacturing technology of employing is as shown in Figure 1; In crucible A, will grow brilliant liquid phase feed puts into; Under the effect of crucible A both sides well heater A1 and crucible A bottom heating panel A2; Make crucible A bottom form countless nucleation 1 just; And make this just nucleation 1 upwards grow up with unidirectional solidification and form a complete polysilicon crystal 10 as shown in Figure 2, these polysilicon crystal 10 last chip grounds that adopt across cutting, grinding, polishing and section to become set size are for being made into solar chip.
Moreover; The polysilicon crystalline each just distinguish separated by " crystal boundary " between the nucleation; Utilize the polysilicon crystal of above-mentioned existing technological institute moulding because just the volume of nucleation can't maximize, cooperate, the first nucleation 1 that has a greater number in polysilicon crystal 10 unit surfaces is arranged making to practise with reference to shown in Figure 3; The quantity of relative crystal boundary 11 is also more, causes utilizing the chip optoelectronic transformation efficiency of this polysilicon crystal 10 moulding of cutting into slices low.
In addition, practise its crystal boundary of polysilicon crystal that has manufacturing technology to produce and belong to active crystal boundary mostly, electronics electricity hole will be booked through the zone of active crystal boundary, can not generate electricity, and becomes invalid zone; If but process is electric passivity crystal boundary zone, electronics electricity hole is just unaffected, and usefulness is just the same as monocrystalline.Therefore how controlling electric passivity crystal boundary or reduce active crystal boundary is very important to polysilicon crystal manufacturing technology.
Summary of the invention
Main purpose of the present invention promptly can't make just in the moulding of the existing known techniques of solution institute, and the volume of nucleation maximizes; Cause chip electricity passivity and the lower problem of electricity conversion by the moulding of polysilicon crystal cut; That is can effectively reduce the resistance of chip; And can promote electric passivity, and then increase the photoelectric transformation efficiency of chip.
Take off purpose on reaching; The present invention mainly sees through the crucible bottom is imposed the local high type of cooling; Make the radially bearing of trend of liquid phase feed form plural temperature contrast district; To control each just formation position and direction of growth of nucleation, make each just nucleation upwards grow up and the complete polysilicon crystal that forms has higher electric passivity and the less characteristic of unit cross-sectional area number of grain boundaries: even, can further adopt along first nucleation growth direction vertically the mode of cutting reduce crystal boundary fully.
One of effect of the present invention is to promote electric passivity, the electronics electricity hole of polysilicon crystals can be affected, to increase the photoelectric transformation efficiency of chip.
Two of effect of the present invention is to reduce crystal boundary and promptly reduces chip internal impurity, therefore can increase the photoelectric transformation efficiency of chip equally.
Description of drawings
Fig. 1 has the first nucleation of crystal forming technique to form view for practising;
Fig. 2 practises the polysilicon crystal schematic appearance that has the crystal forming technique to be accomplished for utilization;
Fig. 3 practises the polysilicon crystal square section structural representation that has the crystal forming technique to be accomplished for utilization;
Fig. 4 is a shaped device structural representation of the present invention;
Fig. 5 is a shaped device structure for amplifying synoptic diagram of the present invention;
Fig. 6 is another shaped device structural perspective of the present invention;
Fig. 7 is that nucleation just of the present invention forms view;
Fig. 8 is a nucleation expanded synoptic diagram just of the present invention;
Fig. 9 is a polysilicon crystal schematic appearance of utilizing the present invention to accomplish;
Figure 10 is the heat abstractor plane structure chart of first embodiment of the invention;
Figure 11 is the heat abstractor plane structure chart of second embodiment of the invention;
Figure 12 is the construction for heat radiating device synoptic diagram of third embodiment of the invention;
Figure 13 is the construction for heat radiating device synoptic diagram of fourth embodiment of the invention;
Figure 14 is the polysilicon crystal square section structural representation that utilizes the present invention to accomplish.
[figure number explanation]
A crucible A1 well heater
A2 heating panel A3 heat abstractor
A31 groove A32 radiating area
A33 radiating pipe A34 actuator
A4 liquid phase feed A41 high-temperature zone
A42 cold zone 1 is nucleation just
10 polysilicon crystal, 11 crystal boundaries
Embodiment
Characteristics of the present invention can be consulted the detailed description of the graphic and embodiment of this case and obtained to be well understood to.
Crystal formation mode of the present invention and device are intended to solve the moulding of existing known techniques institute and can't make just that the volume of nucleation maximizes, and cause chip electricity passivity and the lower problem of electricity conversion by the moulding of polysilicon crystal cut; And the present invention utilizes the local high type of cooling; Make the radially bearing of trend of liquid phase feed form plural temperature contrast district (for example being formed with plural spaced high-temperature zone and cold zone); And the growth favourite hobby of the first nucleation of utilization; To control each just formation position and direction of growth of nucleation, make each just nucleation upwards grow up and the complete polysilicon crystal that forms has higher electric passivity and the less characteristic of unit cross-sectional area number of grain boundaries.
Like Fig. 4 and shown in Figure 5, mainly see through the local type of cooling, make the radially bearing of trend of liquid phase feed form plural spaced high-temperature zone and cold zone; Wherein, This integral forming device includes the heat abstractor A3 that is located at crucible A bottom one in order to the crucible A of ccontaining liquid phase feed A4, relatively and is located at the well heater A1 of (and present embodiment is arranged at avris) around the crucible A relatively, and among the embodiment as shown in the figure, this heat abstractor A3 can be heating panel or soaking plate; Wherein this heat abstractor A3 is provided with plural number near crucible A one side and contacts section and noncontact section with crucible A; Among the embodiment as shown in the figure, this heat abstractor A3 can be provided with plural number near crucible A one side and be lower than surperficial discontinuous groove A31, by the mode that plural discontinuous groove A31 is set; Make crucible A bottom is produced heat radiation and local refrigerative effect at interval; As shown in the figure, each groove A31 promptly forms and crucible A noncontact section, and being formed with crucible A bottom between each groove A31 is the radiating area A32 that contacts section; Certainly; This heat abstractor A3 also can protrude in surperficial discontinuous radiating area A32 in be provided with plural number near crucible one side; As shown in Figure 6, each radiating area A32 can be added on outward on this heat abstractor A3, and is the array distribution mode; Certainly each radiating area can also be one-body molded with this heat abstractor, can also be arranged on the heat abstractor for non-array distribution mode.
And single unit system is promptly under crucible A avris or the effect of well heater A1 and crucible A bottom heat abstractor A3 on every side; Make the specific position of crucible A bottom form nucleation 1 just; Like Fig. 5, Fig. 7 and shown in Figure 8, this heat abstractor A3 imposes local cooling to crucible A bottom, makes this liquid phase feed A4 be formed with high-temperature zone A41 with respect to each groove A31 of heat abstractor; Then be formed with cold zone A42 with respect to radiating area A32; Make this liquid phase feed A4 its radially bearing of trend form the temperature contrast district of plural number, and the liquid phase feed A4 crystallization on each cold zone A42 forms plural number nucleation 1 just, please consults Fig. 6 and shown in Figure 7 simultaneously; Crucible A continue to be heated and the effect that is incubated under make just nucleation 1 towards two sides noncontact section and high-temperature zone A41 (that is each groove A31) enlarges radially; The first nucleation 1 that at first is formed at crucible A lower floor is maximized, and use the control form of nucleation 1 just, so each just nucleation 1 upwards grow up with unidirectional solidification and form a complete polysilicon crystal 10 as shown in Figure 9.
When implementing; Heat abstractor A3 can be shown in figure 10, adopts the array distribution mode on heat abstractor A3, to be provided with plural groove A31, and this groove A31 can be rectangle; Or be shown in figure 11; On heat abstractor A3, be provided with plural groove A31 with non-array distribution mode, this groove A31 can also be circle, makes to reach the purpose that control just becomes kernel form.
In addition, another embodiment of heat abstractor of the present invention also can be shown in figure 12, and this heat abstractor A3 is provided with plural radiating pipe A33; And each radiating pipe A33 one end contacts with crucible A bottom, makes this crucible A bottom contact section with each radiating pipe A33 and forms cold zone A42, and other then is high-temperature zone A41; And also can further be filled with heat-eliminating medium among each radiating pipe A33; With as heat-conducting substance, for example can be gas or liquid, and this heat-eliminating medium can also be flowing-type or non-flowing type; Shown in figure 13; This heat abstractor A3 can further be provided with the actuator A34 that is communicated with each radiating pipe A33, makes the heat-eliminating medium that has in each radiating pipe A33 can form flowing-type, can strengthen its heat radiation cooling performance.
Because at first being formed at the first nucleation of crucible lower floor, the present invention has the characteristic that can maximize; Make by each just nucleation unidirectional solidification upwards grow up and the complete polysilicon crystal that forms have shown in figure 14, the advantage of first nucleation 1 of unit cross-sectional area and crystal boundary 11 comparatively small amt; Certainly, this polysilicon crystal 10 can further adopt the mode of vertically cutting along first nucleation 1 growth direction to reduce crystal boundary, and then can reduce chip because crystal boundary institute deutero-resistance; Especially, after chip internal crystal boundary (being chip internal impurity) reduces relatively, can increase the photoelectric transformation efficiency of chip; Moreover, by the high type of cooling in part, make this first nucleation form nucleation just with its growth favourite hobby, can promote electric passivity, the electronics electricity hole of polysilicon crystals can be affected, to increase the photoelectric transformation efficiency of chip.
In sum; The present invention provides preferable feasible a crystal formation mode and a device; Effectively the moulding of the existing known techniques of solution institute can't make the volume maximization of nucleation just, causes producing the lower problem of electric passivity by the chip of polysilicon crystal cut moulding, and the application of patent of invention is offered in the whence in accordance with the law; Technology contents of the present invention and technical characterstic the sixth of the twelve Earthly Branches disclose as above, yet the personage who is familiar with this technology still possibly do various replacement and the modifications that spirit is invented in this case that do not deviate from based on announcement of the present invention.Therefore, protection scope of the present invention should be not limited to embodiment announcement person, and should comprise various do not deviate from replacement of the present invention and modifications, and is contained by following claim.
Claims (8)
1. crystal formation mode; Utilize the local high type of cooling; Make the radially bearing of trend of liquid phase feed form plural temperature contrast district; To control each just formation position and direction of growth of nucleation, make each just nucleation upwards grow up and the complete polysilicon crystal that forms has higher electric passivity and the less characteristic of unit cross-sectional area number of grain boundaries;
Wherein this high type of cooling is cooled off with the part; Make the radially bearing of trend of liquid phase feed form plural spaced high-temperature zone and cold zone; Wherein the liquid phase feed crystallization on each cold zone forms plural number nucleation just, and each first nucleation is towards two side radial high-temperature zone elongation growths;
Wherein this liquid phase feed is placed in the crucible, sees through the crucible bottom is imposed local cooling, and wherein this crucible bottom further is provided with heat abstractor, the crucible bottom is imposed local cooling;
Wherein this heat abstractor is a heating panel, and wherein this heat abstractor is provided with the section that contacts with crucible constituting radiating area near crucible one side, and with the discontiguous noncontact section of crucible.
2. crystal formation mode as claimed in claim 1, wherein the noncontact section of this heat abstractor is to be provided with plural number near crucible one side to be lower than surperficial discontinuous groove.
3. crystal formation mode as claimed in claim 2 wherein is formed with the radiating area that contacts with the crucible bottom between each groove.
4. crystal formation mode as claimed in claim 1, wherein this heat abstractor is provided with plural number near crucible one side and protrudes in surperficial discontinuous radiating area.
5. crystal formation mode as claimed in claim 4, wherein each radiating area can be one-body molded with this heat abstractor; Perhaps each radiating area can be added on outward on this heat abstractor.
6. crystal formation mode as claimed in claim 1, wherein this heat abstractor is provided with plural radiating pipe, and each radiating pipe one end contacts with the crucible bottom, wherein is filled with heat-eliminating medium in each radiating pipe.
7. crystal formation mode as claimed in claim 1, wherein this polysilicon crystal by adopting is avoided crystal boundary along the mode that first nucleation growth direction vertically cuts.
8. crystal formation device includes:
One crucible is in order to ccontaining liquid phase feed;
Well heater is located at around the crucible;
One is located at crucible bottom heat abstractor, and wherein this heat abstractor is a heating panel, and wherein this heat abstractor is provided with the section that contacts with crucible constituting radiating area near crucible one side, and with the discontiguous noncontact section of crucible; Wherein this noncontact section is that plural number is lower than surperficial discontinuous groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101326953A CN101624723B (en) | 2008-07-10 | 2008-07-10 | Mode and device for forming crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101326953A CN101624723B (en) | 2008-07-10 | 2008-07-10 | Mode and device for forming crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101624723A CN101624723A (en) | 2010-01-13 |
| CN101624723B true CN101624723B (en) | 2012-06-06 |
Family
ID=41520710
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008101326953A Expired - Fee Related CN101624723B (en) | 2008-07-10 | 2008-07-10 | Mode and device for forming crystal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101624723B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120280429A1 (en) * | 2011-05-02 | 2012-11-08 | Gt Solar, Inc. | Apparatus and method for producing a multicrystalline material having large grain sizes |
| CN108950681B (en) * | 2017-05-27 | 2020-12-15 | 镇江仁德新能源科技有限公司 | Graphite chassis of polycrystal ingot furnace and polycrystal ingot furnace |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002193610A (en) * | 2000-12-26 | 2002-07-10 | Mitsubishi Materials Corp | Apparatus for producing crystal silicon |
| JP2005132675A (en) * | 2003-10-30 | 2005-05-26 | Canon Inc | Single crystal production apparatus |
-
2008
- 2008-07-10 CN CN2008101326953A patent/CN101624723B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002193610A (en) * | 2000-12-26 | 2002-07-10 | Mitsubishi Materials Corp | Apparatus for producing crystal silicon |
| JP2005132675A (en) * | 2003-10-30 | 2005-05-26 | Canon Inc | Single crystal production apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101624723A (en) | 2010-01-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101935869B (en) | Crucible and substrate slice for growing and casting monocrystalline silicon | |
| CN103014833B (en) | The preparation method of silicon ingot | |
| CN101654805B (en) | Preparation method of casting polysilicon with large crystal grains in single crystal direction | |
| CN102877129B (en) | A kind of crystalline silicon and preparation method thereof | |
| CN101591808A (en) | Mix directionally solidified casting monocrystalline silicon of germanium and preparation method thereof | |
| US9637391B2 (en) | Crystalline silicon ingot including nucleation promotion layer | |
| CN104124292A (en) | Boron-gallium codoping monocrystalline silicon piece and preparation method thereof, and solar cell | |
| CN102140673A (en) | Polycrystalline silicon ingot furnace heating device with separately controlled top and side | |
| CN103882517A (en) | Preparation method of polycrystalline silicon ingot | |
| CN201593073U (en) | Thermal-field structure of energy-saving polysilicon ingot furnace | |
| CN103320853A (en) | Seed crystal laying method, method for casting mono-like silicon ingot and Mono-like Silicon wafer | |
| TWI444509B (en) | Method of manufacturing crystalline silicon ingot | |
| CN101624723B (en) | Mode and device for forming crystal | |
| CN103526290A (en) | Preparation method of polycrystalline silicon cast ingot | |
| CN103112093A (en) | Sliced method of polycrystalline silicon solar cell | |
| CN102064239B (en) | Method for producing polycrystalline silicon thick-film solar battery | |
| CN100449793C (en) | Copper-idium-selenium CuInSe solar cell and preparing method thereof | |
| CN102011180A (en) | Thermal field structure of single crystal furnace | |
| CN201560248U (en) | Graphite crucible for single crystal furnace | |
| CN106676628A (en) | Preparation method of (100) crystal-orientation small-grain cast multicrystalline silicon | |
| CN102766904A (en) | Silica ceramic crucible | |
| CN202022993U (en) | Heating device of polysilicon ingot furnace with split-control top | |
| CN202164384U (en) | Ingot furnace for producing quasi monocrystalline silicon ingot with high conversion efficiency | |
| CN201338344Y (en) | Device for cutting polysilicon crystal to form solar wafer | |
| CN103594541A (en) | Polycrystalline silicon/monocrystalline silicon heterojunction structure applied to solar cell and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120606 Termination date: 20200710 |